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TU Berlin

Inhalt des Dokuments

2001

865         V.M. Ustinov, A.E. Zhukov, N.A. Maleev, A.R. Kovsh, S.S. Mikhrin, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, J.A. Lott, D. Bimberg

              1.3 µm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

J. Cryst. Growth 227-228, p. 1155 (2001)

 

866         I.L. Krestnikov, N.A. Maleev, A.V. Sakharov, A.R. Kovsh, A.E. Zhukov, A.F. Tsatsul'nikov, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, J.A. Lott

              1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices

Semicond. Sci. Technol. 16, p. 844 (2001)

 

867         A.V. Sakharov, I.L. Krestnikov, N.A. Maleev, A.R. Kovsh, A.E. Zhukov, A.F. Tsatsul'nikov, V.M. Ustinov, N.N . Ledentsov, D. Bimberg, J.A. Lott, Zh.I. Alferov

              1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them

Semiconductors 35, p. 854 (2001)

 

868         N.A. Maleev, A.V. Sakharov, C. Möller, I.L. Krestnikov, A.R. Kovsh, S.S. Mikhrin, A.E. Zhukov, V.M. Ustinov, W. Passenberg, E. Pawlowski, H. Künzel, A.F. Tsatsul'nikov, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov

              1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots

J. Cryst. Growth 227-228, p. 1146 (2001)

 

869         M. Strassburg, O. Schulz, U.W Pohl, D. Bimberg, s. Itoh, K. Nakano, A. Ishibashi, M. Klude, D. Hommel

              A novel approach for improved green emitting II-VI lasers

IEEE J. Selected Topics on Quantum Electronics 7, p. 371 (2001)

 

870         I.L. Krestnikov,  N.N. Ledentsov, A. Hoffmann,  D. Bimberg

              Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices (Review Article)

phys. stat. sol. (a) 183, p. 207 (2001)

 

871         K. Goede, A. Weber, F. Guffarth, C.M.A. Kapteyn, F. Heinrichsdorff, D. Bimberg, M. Grundmann

              Calorimetric investigation of intersublevel transitions in charged quantum dots

Phys. Rev. B 64,  p. 245317-1 (2001)

 

872         R. Wetzler, C.M.A. Kapteyn, R. Heitz, A. Wacker, E. Schöll, D. Bimberg

              Capacitance-voltage characteristics of self-organized InAs/GaAs quantum dots embedded in a pn diode

phys. stat. sol. (b) 224,  p. 79 (2001)

 

873         V. Türck, S. Rodt, R. Heitz, O. Stier, M. Straßburg, U.W. Pohl, D. Bimberg

              Charged excitons and biexcitons in self-organized CdSe quantum dots

phys. stat. sol. (b) 224,  p. 217 (2001)

 

874         R.L. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, D. Bimberg

              Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Appl. Phys. Lett. 78, p. 1207 (2001)

 

875         P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

              Coherent versus incoherent dynamics in InAs quantum-dot active wave guides

J. Appl. Phys. 89, p. 6542 (2001)

 

876         J.A. Lott, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg

              Continous wave 1.3 mm InAs-InGaAs quantum dot VCSELS on GaAs substrates

Digest of the LEOS Summer Topical Meetings ISBN 0-7803-7100-3, p. 137 (2001)

 

877         R.N. Pereira, W. Gehlhoff, N.A. Sobolev, A.J. Neves, D. Bimberg

              Determination of the W8 and AB5 defect levels in the diamond gap

J. Phys. Condens. Matter 13, p. 8957 (2001)

 

878         D. Söderström, S. Lourduloss, M. Wallnäs, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann

              Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe

J. Elec. Mat. 30, p. 972 (2001)

 

879         L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier,  R.A. Suris, D. Bimberg

              Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

IEEE J. Quantum El. 37, p. 418 (2001)

 

880         G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, A. Hoffmann, D. Bimberg

              Effective boundary conditions for planar QD structures

Phys. Rev. B 64, p. 125326 (2001)

 

881         G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, D. Bimberg

              Effective medium approach for planar QD stuctures

Proc. The 9th Intern. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, p. 331 (2001)

 

882         D. Söderström, S. Lourduloss, M. Wallnäs, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann

              Electrical characterization of Ruthenium-Doped InP grown by low pressure hydride vapor phase epitaxy

Electrochem. and Solid-State Lett. 4, p. G53 (2001)

 

883         F. Guffarth, R. Heitz, A. Schliwa, O. Stier, A.R. Kovsh,  V. Ustinov, N.N. Ledentsov, D. Bimberg

              Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well

phys. stat. sol. (b) 224, p. 61 (2001)

 

884         R. Heitz, I. Mukhametzhanov, O. Stier, A. Hoffmann, A. Madhukar, D. Bimberg

              Electronic properties of InAs/GaAs quantum dots

in: Physics and Applications of Semiconductor Quantum Structures, eds. j.-C. Woo and T. Yao (IOP Publishing, Bristol , p. Jan 20 (2001)

 

885         N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, D. Bimberg

              Enhanced radiation hardness of InAs/GaAs quantum dot structures

phys. stat. sol. (b) 224, p. 93 (2001)

 

886         Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, M.C. Carmo

              Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

Electr. Lett. 37, p. 174 (2001)

 

887         V.A. Shchukin, N.N. Ledentsov,  A. Hoffmann, D. Bimberg, I.P. Soshnikov, B.V. Volovik, V.M. Ustinov, D. Litvinov, D. Gerthsen

              Entropy-driven effects in self-organized formation of quantum dots

phys. stat. sol. (b) 224, p. 503 (2001)

 

888         R. Heitz, F. Guffarth, I. Mukhamethzahnov, O. Stier, A. Madhukar, D. Bimberg

              Excited states of InAs/GaAs quantum dots

phys. stat. sol. (b) 224, p. 367 (2001)

 

889         A. Schliwa, O. Stier, R. Heitz, M. Grundmann, D. Bimberg

              Exciton level crossing in coupled InAs/GaAs quantum dot pairs

phys. stat. sol. (b) 224, p. 405 (2001)

 

890         R. Heitz, F. Guffarth, O. Stier, A. Schliwa, A. Hoffmann, D. Bimberg

              Existence of a phonon bottleneck for excitons in quantum dots

Phys. Rev. B 64, p. 241305-1 (2001)

 

891         M.V. Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

              Gain and threshold characteristics of longwavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

IEEE J. Quantum Elec. 37, p. 676 (2001)

 

892         D. Huhse, O. Reimann, E.H. Böttcher, D. Bimberg

              Generation of pico- and femtosecond-wavelength tunable optical pulses with self-seeded laser diodes

Proc. of SPIE, Laser Optics 2000, St. Petersburg, Russia , p. 24 (2001)

 

893         P. Werner, N.D. Zakharov, R. Heitz, D. Bimberg, V.M. Ustinov, V.A. Egorov, B.V. Volovik, N.N. Ledentsov, G.E. Cirlin

              Growth and characterization of InAs nanostructures in silicon emitting in the 1.3 µm region

Proc. APF, Ed. N. Koguchi, Tsukuba, Japan 2001, p. 132 (2001)

 

894         R. Sellin, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, Zh.I. Alferov

              Growth and optical characterization of long-wavelength quantum dots for low-threshold current current lasers

Proc. 6th Intern. Symp. on Advanced Physical Fields, Tsukuba, Japan , p. 49 (2001)

 

895         Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg

              High power quantum dot lasers at 1160 nm

phys. stat. sol. (b) 224, p. 819 (2001)

 

896         N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, D. Bimberg, J.A. Lott, Zh.I. Alferov

              High-power-wavelength lasers using GaAs-based quantum dots

Proc. SPIE’s Intern. Symp. Optoelectronics 2001 (Photonic West), San Jose, USA 4287, p. 71-82 (2001)

 

897         C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter

              Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy

phys. stat. sol. (b) 224, p. 261 (2001)

 

898         M.V. Maximov, V.B. Volovik, C.M. Sotomayor Torres, E.M. Ramushina, V.I. Skopina, E.M. Tanklevskaya, S.A. Gurevich, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

              Impact of carrier lateral transport and surface recombination on PL efficiency of mesas with self-organized quantum dots

phys. stat. sol (a) 188, p. 955 (2001)

 

899         N.A. Maleev,  I.L. Krestnikov, A.R. Kovsh,A.V. Sakharov, A.E. Zhukov, V.M. Ustinov, S.S. Mikhrin, W. Passenberg, E. Pawlowski, C. Möller, A.F. Tsatsul'nikov, H. Künzel, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg

              InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 µm wavelength range

phys. stat. sol (b) 224, p. 803 (2001)

 

900         V.N. Petrov, G.E. Tsyrlin, A.O. Golubok, N.I. Komyak, V.M. Ustinov, N.N . Ledentsov, Zh.I. Alferov, D. Bimberg

              InAs/Si-based quantum-dot heterostructures for new-generation optoelectronic and microelectronic devices

Russian Microelectronics 30, p. 99 (2001)

 

901         G.E. Cirlin, N.K. Polyakov, V.N . Petrov, V.A. Egorov, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele

              Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties

Materials Science and Engineering B80, p. 108 (2001)

 

902         N.N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I.P. Soshnikov, V.A. Shchukin, V.M. Ustinov, A.Yu. Egorov, A.E. Zukov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.P. Semyagin, D. Bimberg, Zh.I. Alferov

              Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surface

J. Elec. Mat. 30, p. 463 (2001)

 

903         S. Bognár, M. Grundmann, O. Stier, D. Ouyang, C. Ribbat, R. Heitz, R. Sellin, D. Bimberg

              Large modal gain of InAs/GaAs quantum dot lasers

phys. stat. sol. (b) 224, p. 823 (2001)

 

904         M.V. Maximov, I.L. Krestnikov, A.G. Makarov, A.E. Zhukov, N.A. Maleev,  V.M. Ustinov, A.F. Tsatsul'niklov, Zh.I. Alferov, A.Yu. Chernyshov, N.N . Ledentsov, D. Bimberg, C.M. Sotomayor Torres

              Large spectral splitting of TE and TM components and enhancement of the spontaneous emission rate of QDs in a microcavity

phys. stat. sol. (b) 224, p. 811 (2001)

 

905         L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg

              Many-particle effects in type II quantum dots

Appl. Phys. Lett. 78, p. 1418 (2001)

 

906         A. Strittmatter, L. Reißmann, D. Bimberg, H. Schröder, E. Obermeier, T. Riemann, J. Christen, A. Krost

              Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111)substrates

Appl. Phys. Lett. 78, p. 727 (2001)

 

907         L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier,  R.A. Suris, D. Bimberg

              Maximum modal gain of self-assembled InAs/GaAs quantum-dot laser

J. Appl. Phys. 90, p. 1666 (2001)

 

908         M. Grundmann, A. Weber, K. Goede, F. Heinrichsdorff, D. Bimberg, N.N. Ledentsov, P.S Kop'ev, Z.I. Alferov

              Mid-infrared properties of quantum dot lasers

Proc. SPIE, Photonics Technology in the 21st Century 4598, p. 44 (2001)

 

909         I.P. Soshnikov, N.N. Ledentsov, B.V. Volovik, A. Kovsh,  N.A. Maleev, S.S. Mikhrin,  O.M. Gorbenko, W. Passenberg, H. Kuenzel, N. Grote, V.M. Ustinov, H. Kirmse, W. Neumann, P. Werner, N.D. Zakharov, D. Bimberg, Zh.I. Alferov

              Nitrogen-activated phase separation in InGaAsN/GaAs heterostructures grown by MBE

Proc. The 9th Intern. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia , p. 82 (2001)

 

910         D. Bimberg, M. Grundmann, N.N . Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, J.A. Lott

              Novel infrared quantum dot lasers: Theory and reality

phys. stat. sol. (b) 224, p. 787 (2001)

 

911         B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, N. Grote, N.A. Cherkashin, Yu.G. Musikhin,  N.N. Ledentsov, D. Bimberg, V.M. Ustinov

              Optical and structural properties of self-organized InGaAsN/GaAs nanostructures

Semicond. Sci. Technol. 16, p. 186 (2001)

 

912         H.Y. Ryu, Y.H. Lee, R.L. Sellin, D. Bimberg

              Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature

Appl. Phys. Lett. 79, p. 3573 (2001)

 

913         R.N. Pereira, W. Gehlhoff, N.A. Sobolev, A.J. Neves, D. Bimberg

              Photo-ERP studies on the AB3 and AB4 nickel-related defects in diamond

Physica B 308-310, p. 589 (2001)

 

914         D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, R. Sellin, Zh.I. Alferov, P.S. Kop'ev, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, J.A. Lott

              Quantum dot lasers: Theory and experiment

AIP Conf. Proc. 560, p. 178 (2001)

 

915         N.N. Ledentsov, A. Hoffmann, I.L. Krestnikov, V.M. Ustinov, D. Bimberg, Zh.I. Alferov

              Quantum dot semiconductor lasers

Proc. of Commemorative Intern. Symp. for the 40th Anniversary of the Foundation of the Osaka Electro-Communication University 1/2, p. 57 (2001)

 

916         J.A. Lott, N.N. Ledentsov, V.M. Ustinov, D. Bimberg

              Quantum dot vertical cavity lasers

Digest of the LEOS Summer Topical Meetings ISBN 0-7803-7100-3, p. 17 (2001)

 

917         D. Bimberg

              Quantum dots: Lasers and Amplifiers

Buchbeitrag in: Compound Semiconductors 2001, eds. Arakawa, Hirayama, Kishino, Yamaguchi, IOP Publishing, Bristol and Philadelphia 170, p. 485 (2001)

 

918         A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kopev, Zh.I. Alferov

              Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots

phys. stat. sol. (b) 224, p. 833 (2001)

 

919         H. Born, L. Müller-Kirsch, R. Heitz, A. Hoffmann, D. Bimberg

              Radiative recombination in type II GaSb/GaAs quantum dots

phys. stat. sol (b) 228, p. R4 (2001)

 

920         N.D. Zakharov, P. Werner, U. Gösele, N.N. Ledentsov, D. Bimberg, N.A. Cherkashin, N.A. Bert, B.V. Volovik, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.F. Tsatsulnikov

              Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 µm range

Mat. Res. Soc. Symp. 672, p. O8.5.1 (2001)

 

921         N.N. Ledentsov, V.A. Shchukin, R. Heitz, D. Bimberg, V.M. Ustinov, N.A. Cherkashin, A.R. Kovsh, Yu.G. Musikhin, B.V. Volovik, A.E. Zhukov, G.E. Cirlin, Zh.I. Alferov

              Reversibility of the island shape, volume and density in Stranski-Krastanow growth

Semicond. Sci. Technol. 16, p. 502 (2001)

 

922         M. Zafar Iqbal, A. Majid, S. Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar, D. Bimberg

              Rhodium-related deep levels in n-type MOCVD GaAs

Physica B 308-310, p. 816 (2001)

 

923         M. Meixner, E. Schöll, V.A. Shchukin, D. Bimberg

              Self-assembled quantum dots: Crossover from kinetically controlled to thermodynamically limited growth

Phys. Rev. Lett. 87, p. 236101-1 (2001)

 

924         S.A. Maksimenko, G.Ya. Slepyan, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, D. Bimberg

              Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays

Materials Science and Engineering B82, p. 215 (2001)

 

925         P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

              Spectral hole-burning and carrier-heating dynamics in quantum dot amplifiers: Comparison with bulk amplifiers

phys. stat. sol. (b) 224, p. 419 (2001)

 

926         V.A. Shchukin, N.N. Ledentsov, D. Bimberg

              Spontaneous formation of nanostructures on crystal surfaces

Physica E 9, p. 140 (2001)

 

927         O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg

              Stability of biexcitons in pyramidal InAs/GaAs quantum dots

phys. stat. sol. (b) 224, p. 115 (2001)

 

928         L. Müller-Kirsch, A. Schliwa, O. Stier, R. Heitz, H. Kirmse, W. Neumann, D. Bimberg

              State filling in type II quantum dots

phys. stat. sol. (b) 224, p. 349 (2001)

 

929         F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N.N. Ledentsov, A.R. Kovsh, V.M. Ustinov,  D. Bimberg

              Strain engineering of self-organized InAs quantum dots

Phys. Rev. B 64, p. 85305 (2001)

 

930         H. Kirmse, I. Häusler, R. Schneider, W. Neumann, L. Müller-Kirsch, D. Bimberg

              Structural and chemical characterization of GaSb/GaAs quantum dot structures by TEM

Proc. microscopy of semiconducting mat. XII, eds. A.G. Cullis, J.L. Hutchinson, IOP, Bristol, 2001 3, p. 13-16 (2001)

 

931         D. Soderstrom, S. Lourdudoss, M. Wallnass, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann

              Studies on Ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy

J. of The Electrochem. Soc. 148, p. G375 (2001)

 

932         H. Born, R. Heitz, A. Hoffmann, F. Guffarth, D. Bimberg

              Suppressed relaxation in InGaAs/GaAs quantum dots

phys. stat. sol. (b) 224, p. 487 (2001)

 

933         L. Müller-Kirsch, R. Heitz, U.W. Pohl, D. Bimberg, I. Häusler, H. Kirmse, W. Neumann

              Temporal evolution of GaSb/GaAs quantum dot formation

Appl. Phys. Lett. 79, p. 1027 (2001)

 

934         H.P. Wagner, R.H.-P. Tranitz,  R. Schuster, R. Engelhardt, U.W. Pohl, D. Bimberg

              Thermal activation and phase relaxation of excitons in CdSe/ZnSSe quantum island structures

phys. stat. sol. (b) 224, p. 195 (2001)

 

935         C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov

              Time-resolved capacitance spectroscopy of hole and electron levels in InAsGaAs quantum dots

phys. stat. sol. (b) 224, p. 57 (2001)

 

936         V. Türck, S. Rodt, R. Heitz, M. Strassburg, U.W. Pohl, D. Bimberg

              Time-resolved spectroscopy of single quantum dots: evidence for phonon assisted carrier feeding

phys. stat. sol. (b) 224, p. 643 (2001)

 

937         P. Borri, S. Schneider, W. Langbein, U. Woggon, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov, Zh.I. Alferov, D. Ouyang, D. Bimberg

              Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near
1.3-µm-wavelength at room temperature

Appl. Phys. Lett. 79, p. 2633 (2001)

 

938         P. Borri, W. Langbein, S. Schneider, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg

              Ultralong dephasing time in InGaAs quantum dots

Phys. Rev. Lett. 87, p. 157401-1 (2001)

 

939         D. Huhse, M. Kuntz, D. Bimberg

              Wellenlängendurchstimmbare cw- und Puls-Halbleiterlaserquellen mit externen Glasfaserkavitäten für die Gasanalytik

tm Technisches Messen 68, p. 380 (2001)

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