Inhalt des Dokuments
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1998 - 2000
553 Th. Engel, A. Strittmatter, W. Passenberg, E. Dröge, A. Umbach, W. Schlaak, R. Steingrüber, A. Seeger, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg
38 GHz Narrow Band Photoreceiver OEIC with MSM Photodetector and HEMT Amplifier
Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 63 (1998)
554 E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, R. Steingrüber
70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation
Electron. Lett. 34, 1421 (1998)
555 E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, D. Bimberg, O. Reimann, R. Steingrüber
78 GHz distributed InGaAs MSM Photodetector
Electron. Lett. 34, 2241 (1998)
556 O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D.Bimberg, H.D. Stahlmann
Advanced Semiconductor Laser Based Electro-Optical Sampling System Using SolitonPulse Compression for Direct Probing at 1.55-µm Wavelength
Proc. LEOS ´98, Orlando 1, p. 215 (1998)
557 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop’ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott
Application of self-organized quantum dots to edge emitting and vertical cavity lasers
Physica E 3, 129 (1998)
558 St. Kollakowski, Ch. Lemm, E. H. Böttcher, D. Bimberg
Buried InAlGaAs/InP waveguides – etching, overgrowth, and characterization
IEEE Photon. Technol. Lett. 10, 114 (1998)
559 F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Carrier dynamics in type-II GaSb/GaAs qantum dots
Phys. Rev. B 57, 4635 (1998)
560 M. Grundmann, R. Heitz, D. Bimberg
Carrier statistics in quantum dot lasers
Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 772 (1998)
561 A. Khan, M.Z. Iqbal, U.S. Qurashi, M. Yamaguchi, N. Zafar, A. Dadgar, D. Bimberg
Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition
Jpn. J. Appl. Phys. 37, 4595 (1998)
562 R. Schneider, H. Kirmse, W. Neumann, M. Kappelt, F. Heinrichsdorff, A. Krost, D. Bimberg
Characterization of III-V quantum structures by EFTEM
Electron Microscopy III, 429 (1998)
563 A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen
Comparison between <st1:place w:st="on"><st1:city w:st="on">GaAs</st1:city>, <st1:state w:st="on">AlAs.</st1:state></st1:place> and AlN buffer layers for the growth of GaN layers on silicon substrates
Proc.Intern. Conf. on Silicon Carbide, III-nitrides and Related Materials, Stockholm, Sweden, p. 1145 (1998)
564 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott
Competitive vertical cavity and edge emitting quantum dot lasers
Proc. Conf. on Lasers and Electro-Optics Europe, CLEO <st1:place w:st="on">EUROPE</st1:place>, 14-18 Sep, p. 63 (1998)
565 V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg
Correlation of InGaAs/GaAs quantum dot and wetting layer formation
Appl. Surf. Sci. 123/124, 352 (1998)
566 Th. Engel, G.G. Mekonnen, A. Umbach, V. Breuer, H.-G. Bach, E.H. Böttcher, D. Bimberg
Design and modeling of narrow band InP-photoreceiver OEICs based on HEMTs and MSM photodetector
Proc. 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits WOCSDICE ‘98, Zeuthen (1998)
567 Th. Engel, A. Strittmatter, W. Passenberg, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, D. Bimberg
Design, fabrication and characterizaiton of narrow band photoreceiver OEISs based on InP
Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 75 (1998)
568 Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zehn, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Device characteristics and their anisotropy in high power quantum dots
Techn. Phys. Lett. 24, 50 (1998)
569 M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg
Diffusion of Cd, Mg and S IN ZnSe-based quantum well structures
Thin Solid Films 336, 208 (1998)
570 E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg
Distributed Millimeter-Wave InGaAs Metal-Semiconductor-Metal Photodetector
Technical Digest Intern. Topical Meeting on Microwave Photonics, MWP‘98, <st1:place w:st="on"><st1:city w:st="on">Princeton</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 173 (1998)
571 E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg
Distributed MSM Photodetectors for the <st1:place w:st="on"><st1:placename w:st="on">Long-Wavelength</st1:placename> <st1:placetype w:st="on">Range</st1:placetype></st1:place>
Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 57 (1998)
572 M. Straßburg, M. Kuttler, O. Stier, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel
Doping dependent Mg diffusion in ZnMgSSe/ZnSSe-structures
J. Crystal Growth 184/185, 465 (1998)
573 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
Edge and vertical cavity surface emitting InAs quantum dot lasers
Solid-State Electronics 42, 1433 (1998)
574 A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maksimov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
Semiconductors 32, 997 (1998)
575 <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, V.P. Kalosha, N.N. Ledentsov, G.Ya. Slepyan, D. Bimberg
Effective-medium approach for certain laser active media
Proc. 7th Intern. Conf. on Complex Media Bianisotropics ‘98, A.F. Jacob and J. Reinert eds., Braunschweig, p. 81 (1998)
576 H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
Mat. Sci. Eng. B51, 229 (1998)
577 M. Kuttler, M. Straßburg, V. Türck, R. Engelhardt, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel, J. Nürnberger, G. Landwehr
Efficient lateral index guiding of II-VI laser structures by implantation-induced disordering
J. Crystal Growth 184/185, 566 (1998)
578 M. Grundmann, O. Stier, D. Bimberg
Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots
Phys. Rev. B 58, 10557 (1998)
579 A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen
Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AlN butter layers
Proc.The Second Intern. Conf. on Nitride Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Tokushima</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 324 (1998)
580 R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg
Excited states and energy relaxation in stacked InAs/GaAs quantum dots
Phys. Rev. B 57, 9050 (1998)
581 G.F. Cirlin, V.N. Petrov, V.G. Dubrovski, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg
abstract Fabrication of InAs quantum dots on silicon
Tech. Phys. Lett. 24, 290 (1998)
582 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers
Proc. IEEE Intern. Conf. on Compound Semiconduct., <st1:city w:st="on"><st1:place w:st="on">San Diego</st1:place></st1:city>, 1997, p. 547 (1998)
583 O. Stier, V. Türck, M. Kappelt, D. Bimberg
First observation of symmetry breaking in strained In0.7Ga0.3As/InP V-groove quantum wires
Physica E 2, 969 (1998)
584 A.F. Tsatsul’nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zhao Zhen, V.N. Petrov, G.E. Cirlin, D. Bimberg, P.S. Kop’ev, Zh.I. Alferov
Formation of InAs quantum dots in a GaAs matrix by growth on vicinal substrates
Semiconductors 32, 95 (1998)
585 A.F. Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Chao Chen, P.S. Kop'ev, Zh.I. Alferov, V.N. Petrov, G.F. Cirlin, D. Bimberg
abstract Formation of InAs Quantum dots in a GaAs matrix during growth on misoriented substrates
Semiconductors å, 84 (1998)
586 G.E. Cirlin, V.G. Dubrovskii, V.N . Petrov, N.K. Polyakov, N.P. Korneevat, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.J. Komyak, V.M . Ustionov, A.Yu Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.E.
Formation of InAs quantum dots on silicon (100) surface
Semicond. Sci. Technol. 13, 1262 (1998)
587 A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop’ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Meltser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D. Bimberg, Zh.I. Alferov
Formation of InSb quantum dots in a GaSb matrix
J. Electr. Mat 27, 414 (1998)
588 D. Bimberg, V.A. Shchukin, N.N. Ledentsov, A. Krost, F. Heinrichsdorff
Formation of self-organized quantum dots at semiconductor surfaces
Appl. Surf. Sci. 130-132, 713 (1998)
589 M. Straßburg, N.N. Ledentsov, A. Hoffmann, U.W. Pohl, D. Bimberg, I.L. Krestnikov,S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop'ev, Zh.I. Alferov
Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures
Physica E 2, 542 (1998)
590 M. Straßburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg, Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov
Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix
Appl. Phys. Lett. 72, 942 (1998)
591 V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, U.W. Pohl, N.N. Ledentsov, D. Bimberg, S.V. Ivanov
Gain to absorption conversion by increasing excitation density in excitonic waveguides
J. Crystal Growth 184/185, 632 (1998)
592 D. Huhse, C. Warmuth, D. Bimberg, A.A. Sysoliatin, E.M. Dianov
Generation of ultrashort (<500 fs) wavelength tunable laser pulses by self-seeding and adiabatic soliton compression
Proc. CLEO/Europe ‘98, Glasgow, Paper CTu I 67, p. 102 (1998)
593 A. Dadgar, O. Stenzel, L. Koehne, A. Naeser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann
Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition
J. Cryst. Growth 195, 69 (1998)
594 D. Bimberg, M. Grundmann, N.N. Ledentsov
Growth, spectroscopy, and laser application of self-ordered III-V quantum dots
MRS Bulletin 23, 31 (1998)
595 M.v. Ortenberg, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg
High magnetic fields probing nanostructures: Magneto-condensation into quantum dots
Physica B 246/247, 88 (1998)
596 M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop’ev, L.V. Asryan, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner
High power continuous wave operation of InGaAs/AlGaAs quantum dot laser
J. Appl. Phys. 83, 5561 (1998)
597 A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg
High-gain excitonic lasing from a single InAs monolayer in bulk GaAs
Appl. Phys. Lett. 72, 1433 (1998)
598 St. Kollakowski, E.H. Böttcher, A. Strittmatter, D. Bimberg
High-speed InGaAs/InAlGaAs/InP waveguide-integrated MSM photodetector for the 1.3 – 1.55 µm wavelength range
Electron. Lett. 34, 587 (1998)
599 R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov
Hot carrier relaxation in InAs/GaAs quantum dots
Physica E 2, 578 (1998)
600 G.E. Cirlin, V.G. Dubrovski, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, N.N. Ledentsov,Zh.I. Alferov, D. Bimberg
InAs nanoscale islands on Si surface: a new type of quantum dots
Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 249 (1998)
601 G.E. Cirlin, V.N. Petrov, V.G. Dubrovsky, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg
InAs quantum dots on Si
Techn. Phys. Lett. 24, 10 (1998)
602 M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott
InAs/GaAs quantum dot injection lasers
Workbook of the Topical Meeting on "Radiative Processes and Dephasing in Solids", Coeurd'Aline, <st1:state w:st="on"><st1:place w:st="on">Idaho</st1:place></st1:state>, Trends in Optics and Photonics OSA Series 18, 34 (1998)
603 M. Kappelt, V. Türck, D. Bimberg
InAsxP1-x V-Groove quantum wires
Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 587 (1998)
604 F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg
Influence of In/Ga intermixing on the optical properties of InGaAs quantum dots
J. Cryst. Growth 195, 540 (1998)
605 M. Kappelt, V. Türck, D. Bimberg, H. Kirmse, I. Hähnert, W. Neumann
InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation
Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 552 (1998)
606 A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, N.V. Lukovskaya, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Injection laser based on composite InAlAs/InAs vertically coupled quantum dots in AlGaAs matrix
Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 386 (1998)
607 A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg
Lasing and electronic properties of a single InAs monolayer embedded in bulklike GaAs
Revista Mexicana de Fisica 44, 154 (1998)
608 B.V. Volovik, A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg
abstract Lasing in Submonolayer InAs-AlGaAs structures without external optical confinement
Tech. Phys. Lett. 24, 567 (1998)
609 M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg
Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering
Appl. Phys. Lett. 73, 1865 (1998)
610 V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul’nikov, B.V. Volovik, P.S. Kop’ev, Z.I. Alferov, S.S. Ruvimov, Z. Liliental-Weber, D. Bimberg
Low threshold quantum dot injection laser emitting at 1.9 µm
Electr. Lett. 34, 670 (1998)
611 D. Bimberg, M. Grundmann, R. Heitz
Master equations for the micro-states description of carrier relaxation and recombination in quantum dots
Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 1 (1998)
612 F. Heinrichsdorff, A. Krost, K. Schatke, D. Bimberg, A.O. Kosogov, P. Werner
MOCVD growth and laser applications of In(Ga)As/GaAs quantum dots
Proc. of the Electrochem. Soc. PV 98-2, Light Emitting Devices for Optoelectronic Applicatons and State-of-the-art program on compound semiconductors XXVIII, eds. H.Q. Hou, R.E. Sah, S.J. Pearton, F. Ren, K. Wada, ISBN 1-56677-194-3, p. 164 (1998)
613 U. Pohl, R. Engelhardt, V. Türck, D. Bimberg
MOCVD of vertically stacked CdSe/ZnSSe quantum islands
Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 569 (1998)
614 L. Finger, M. Nishioka, M. Grundmann, R. Hogg, F. Heinrichsdorff, O. Stier, D. Bimberg, Y. Arakawa
Modification of energy relaxation of InGaAs quantum dots by postgrowth thermal annealing
Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 151 (1998)
615 Th. Engel, A., Strittmatter, W. Passenberg, A. Umbach, W. Schlaak, E. Dröge, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg,
Narrow-band photoreceiver OEIC on InP operating at 38 Ghz
IEEE Photon. Technol. Lett. 10, 1298 (1998)
616 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg
Neuartige Halbleiterlaser auf der Basis von Quantenpunkten
Laser und Optoelektronik 30, 70 (1998)
617 M. Grundmann, R. Heitz, D. Bimberg
New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck
Physica E 2, 725 (1998)
618 Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
abstract Operating characteristics and their anisotropy in high power laser (1.5 W, 300 K) with a quantum-dot active region
Tech. Phys. Lett. 24, 351 (1998)
619 Zhao Zhen, M.V. Maximov, N.N. Ledentsov, A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, V.B. Volovik, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, J. Böhrer, D. Bimberg
Optical characteristics of InGaAs vertically-coupled quantum dots
High Power Laser and Particle Beams 10, 43 (1998)
620 I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres
Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix
phys. stat. sol. (a) 168, 309 (1998)
621 A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov
Optical properties of InAlAs quantum dots in an AlGaAs matrix
Appl. Surf. Sci. 123/124, 381 (1998)
622 J. Christen, T. Hempel, F. Bertram, N.N. Ledentsov, D. Bimberg, A.V. Sakharov, M.V. Maximov, A.S. Vsikov, W.V. Lundin, B.V. Pushnyi, Zh.I.Alferov
Possible impact of surface morphology on stimulated emission in GaN-AlGaN double heterostructures
Physica E 2, 557 (1998)
623 D. Bimberg, M. Grundmann, N.N. Ledentsov
Quantum Dot Heterostructures
John Wiley & Sons Ltd., <st1:place w:st="on">Chichester</st1:place>, GB ISBN 0471973882 (1998)
624 N.N. Ledentsov, V.M. Ustinov, A.V. Shchukin, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Quantum dot heterostructures: fabrication, properties, lasers (Review)
Semiconductors 32, 343 (1998)
625 D. Bimberg
Quantum dot lasers – art and trends
Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> 1, p. 291 (1998)
626 N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, L.V. Vorob’ev, M. Grundmann, F. Heinrichsdorff, D. Bimberg, Zh.I. Alferov
Quantum dot lasers - experimental results
Proc. Advanced Research Workshop on Future Trends in Microelectronics: ‘Off the Beaten Path’, Ile des <st1:place w:st="on"><st1:city w:st="on">Embiez</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1998)
627 Th. Engel, E. Dröge, G. Unterbörsch, E.H. Böttcher, D. Bimberg
Reactive matching of millimetre-wave photodetectors using coplanar waveguide technology
Electron. Lett. 34, 1690 (1998)
628 A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg
Resonant waveguiding and lasing in structures with InAs submonolayers in an AlGaAs matrix
Proc. 6th Intern. Symp. on Nanostructures: 98 Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 382 (1998)
629 I.L. Krestnikov, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, A. Rosenauer, D. Gerthsen, C.M. Sotomayor Torres, D. Bimberg, Zh.I. Alferov
RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, MG)(S, Se) structures
Mat. Sci. Eng. B51, 26 (1998)
630 Krestnikov, M. Maximov, A.V. Sakharov, P.S. Kop'ev, Zh.I. Ålferov, N.N. Ledentsov, D. Bimberg, C.M. Sotomayor Torres
RT Lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattice
J. Crystal Growth 184/185, 545 (1998)
631 A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, H. Schumann, D. Bimberg
Ruthenium a new thermally stable compensator in InP
Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 57 (1998)
632 A. Dadgar, O. Stenzel, A. Näser, M. Zafar Iqbal, D. Bimberg, H. Schmann
Ruthenium: A superior compensator on InP
Appl. Phys. Lett. 73, 3878 (1998)
633 F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, P. Werner
Self organized defect free InAs/GaAs and InAs/InGaAs quantum dots with high lateral density grown on MOCVD
Appl. Surf. Sci. 123/124, 725 (1998)
634 I.L. Krestnikov, A.V. Sakharov, N.N. Ledentsov, I.P. Soshnikov, Yu.G. Musikhin, A.R. Kovsh, V.M. Ustinov, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Self-assembled formation of quantum dots during InGaAlAs quantum well growth
Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 257 (1998)
635 M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov
Semiconductor quantum dots for application in diode lasers
Thin Solid Films 318, 83 (1998)
636 M. Behringer, K. Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg
Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes
J. Crystal Growth 184/185, 580 (1998)
637 V.A. Shchukin, D. Bimberg
Strain-driven self-organization of nanostructures on semiconductor surfaces
Appl. Phys. Lett A 67, 687 (1998)
638 S. Ruvimov, Z. Lilienthal-Weber, J. Washburn, N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, P.S. Kop'ev, Zh.I. Alferov, D. Bimerg
abstract Structural characterization of self-organized nanostructures
Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 781 (1998)
639 R. Engelhardt, V. Türck, U.W. Pohl, D. Bimberg, P. Veit
Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depositions in ZnSSe matrix
J. Crystal Growth 184/185, 311 (1998)
640 V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg
Vertical correlations and anti-correlations in multi-layered arrays of 2D quantum islands
Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 253 (1998)
641 V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg
Vertical correlations and anticorrelations in multi-sheet arrays of two-dimensional islands
Phys. Rev. B 57, 12262 (1998)
642 I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D. Bimberg, C.M. Sotomayor Torres
Vertical coupling of quantum islands in the CdSe/ZnSe submonolayer superlattices
Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 187 (1998)
643 St. Kollakowski, E. Dröge, E.H. Böttcher, A. Strittmatter, O. Reimann, D. Bimberg
Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 µm
Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 266 (1998)
644 I.L. Krestnikov, N.A. Maleev, M.V. Maximov, A.F. Tsatsul’nikov, A.E. Zhukov, A.R. Kovsh, I.V. Kochnev, N.M. Schmidt, N.N. Ledentsov, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
1.06 and 1.3 µm resonant cavity.enhanced photodetectors based on InGaAs quantum dots
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 131 (1999)
645 A.F. Tsatsul’nikov, D.A. Bedarev, A.R. Kovsh, P.S. Kop’ev, N.N. Ledentsov, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, D. Bimberg, P. Werner
1.3 µm emission from 2 ML InAs quantum dots in a GaAs matrix
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 139 (1999)
646 A.F. Tsatsul’nikov, N.A. Bedarev, A.R. Kovsh, P.S. Kop'ev, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D. Bimberg
1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix
Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 261 (1999)
647 Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat’eva, P.S. Kop’ev. A.R. Kovsh. N.A. Maleev, M.V. Maximov, S.S. Mikhrin, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov and D. Bimberg
1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Electr. Lett. 35, 898 (1999)
648 V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, P.S. Kop’ev, Zh.I. Alferov, I.P. Soshnikov, N. Zakharov, P. Werner, D. Bimberg
1.75 µm emission from self-organized InAs quantum dots on GaAs
J. Crystal Growth 201/202, 1143 (1999)
649 A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, M.V. Maximov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
3.3 W injection heterolaser based on self-organized quantum dots
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 128 (1999)
650 A.R. Kovsh, A.E. Zhukov, D.A. Livshits, A.Yu. Egorov, V.M: <st1:place w:st="on">Ustinov</st1:place>, M.V. Maximov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg
3.5 CW operation of quantum dot laser
Electronics Lett. 35, 1161 (1999)
3.9 W CW power from sub-monolayer quantum dot diode laser
Electronics Lett. 35, 1845 (1999)
652 M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov
4 Watt High Power Quantum Dot Lasers
41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
653 St. Kollakowski, A. Strittmatter, E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, K. Janiak
65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3 – 1.55 µm wavelength regime
Appl. Phys. Lett. 74, 612 (1999)
654 O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch
Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition
J. Vac. Sci. Technol. B 17, 1639 (1999)
655 D. Bimberg, V. Türck
Blaue Laserdioden
Verfahrenstechnik Marktübersicht 2000, Sonderveröffentlichung der Zeitschrift Verfahrenstechnik 33, 20 (1999)
656 Martin Straßburg, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, S. Schwedthelm, D. Schikora
Blue emission from Stranski-Krastanov CdSe quantum dots
Proc. Intern. Workshop on Advances in growth and characterization of II-VI semiconductors. <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> (1999)
657 R. Heitz, D. Bimberg, M.-H. Mao, F. Heinrichsdorff, P. Borri, J. MØrk, W. Langbein, J.M. Hvam
Carrier dynamics in quantum dots and quantum dot lasers
The 6th International Workshop on Femtosecond Technology, <st1:place w:st="on"><st1:city w:st="on">Chiba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, 147 (1999)
658 A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova, Yu.G. Musikhin, V.V. Ratnikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient
Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 57 (1999)
659 D. Huhse, D. Bimberg
Competing mode suppression ratio of electrically wavelength tunable self-seeded lasers
IEEE Photon. Technol. Lett. 11, 167 (1999)
660 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Yu.M. Shernyakov, S.S. Mikhrin, N.A. Maleev, E. Yu. Kondrat’eva, D.A. Livshits, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
IEEE Photon. Technol. Lett. 11, 1345 (1999)
661 I.L. Krestnikov, M. Straßburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen
Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots
Phys. Rev. B 60, 8695 (1999)
662 A.E. Zhukov, V.M. Ustinov, A.R. Kovsh. A.Yu. Egorov, N.A. Maleev, N.N. Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov
Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status
Semicond. Sci. Technol. 14, 575 (1999)
663 H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch
Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots
Appl. Phys. Lett 75, 106 (1999)
664 M.Z. Iqbal, U.S. Qurashi, A. Majid, A. Khan, N. Zafar, A. Dadgar, D. Bimberg
Deep levels associated with alpha irradiation of n-type MOCVD InP
Physica B 273, 839 (1999)
665 P. Borri, W. Langbein, J. Mørk, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Dephasing in InAs/GaAs quantum dots
Phys. Rev. B 60, 7784 (1999)
666 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov
Diode lasers based on quantum dots
in: Advances in <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Physics (Festkörperprobleme), ed. B. Kramer 38, 203 (1999)
667 A. Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg
Direct evidence of In-enrichment in MOCVD-grown (In,Ga)As/GaAs quantum dots
Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 171 (1999)
668 E.H. Böttcher, H. Pfitzenmaier, E. Dröge, St. Kollakowski, A. Strittmatter, D. Bimberg
Distributed wave-guide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation
Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 79 (1999)
669 M.-H. Mao, F. Heinrichsdorff, D. Bimberg
Dynamic properties of InGaAs quantum dot lasers
Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 569 (1999)
670 G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, Y.B. Samsonenko, D.V. Denisov, V.M. Busov, B .V. Volovik, V.M. Ustinov, Z.I. Alferov, D. Bimberg, N.D. Zakharov, P. Werner
Effect of growth conditions on InAs nanoislands formation on Si(100) surface
Czechoslovak J. of Physics 49, 1547 (1999)
671 V.P. Kalosha, G.YA. <st1:place w:st="on"><st1:city w:st="on">Slepyan</st1:city>, <st1:country-region w:st="on">S.A.</st1:country-region></st1:place> Maksimeko, N.N. Ledentsov, O. Stier, M. Grundmann, D. Bimberg
Effective-medium approach for active medium of QD laser
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
672 F. Heinrichsdorff, N. Zhakarov, P. Werner, A. Krost, D. Bimberg
Electroluminescence of stacked In(Ga)As/GaAs QDs at 1.3 µm – 1.4 µm
41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
673 C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg
Electron emission from InAs quantum dots
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
674 C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg, P. Werner
Electron escape from InAs quantum dots
Phys. Rev. B 60, 14265 (1999)
675 O. Stier, M. Grundmann, D. Bimberg
Electronic and optical properties of strained quantum dots modeled by 8-band-k•p theory
Phys. Rev. B 59, 5688 (1999)
676 D. Bimberg, O. Stier, M. Grundmann, C. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov
Electronic properties of self-organized quantum dots
Workbook 12. Deutsch-Japanisches Forum Informationstechnologie, Dresden, Germany (1999)
677 O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D. Bimberg, H.D. Stahlmann
Electrooptical sampling using 1.55-µm self-seeded semiconductor laser with soliton pulse compression
IEEE Photonics Techn. Lett. 11, 1024 (1999)
678 R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg
Enhanced polar exciton-LO-phonon interaction in quantum dots
Phys. Rev. Lett. 83, 4654 (1999)
679 R. Heitz, I. Mukhametzhanov, J. Zeng, P. Chen, A. Madhukar, D. Bimberg
Excitation transfer in novel self-organized quantum dot structures
Superlattices and Microstructures 25, 97 (1999)
680 A.F.Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg
abstract Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
Semiconductors 33, 467 (1999)
681 J. L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch
Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots
J. Vac. Sci. Technol. B 17, 1632 (1999)
682 A.F. Tsatsul’nikov, A.Yu Egrov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, N.A. Bert, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, A.O. Golubok, S.A. Masalov, V.N. Petrov, N.N. Ledentsov, R. Heitz, M. Grundmann, D. Bimberg, I.P. Soshnikov
Formation of InAs quantum dots in a silicon matrix
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
683 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, V.I. Kopchatov, A.V. Lunev, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov
Gain characteristics of quantum dot injection lasers
Semicond. Sci. Technol. 14, 118 (1999)
684 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, A.V. Lunev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
abstract Gain characteristics of quantum-dot injection lasers
Semiconductors 33, 1013 (1999)
685 D. Huhse, O. Reimann, E.H. Böttcher, D. Bimberg
Generation of 290 fs laser pulses by self-seeding and soliton compression
Appl. Phys. Lett. 75, 2530 (1999)
686 D. Huhse, C. Warmuth, M. Schulze, D. Bimberg
Generation of short, wavelength tunable semiconductor laser pulses
Proc. SPIE’s Intern. Symp. Optoelectronics 99 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
687 A..E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, E.Cu. Kondrat'eva, Yu.M. Shernyakov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg
Ground and excited state lasing near 1.3-µm from self-assembled quantum dots on GaAs substrates
Digest of the LEOS Summer Topical Meetings, p. 127 (1999)
688 A. Strittmatter, A. Krost, J. Bläsing, P. Veit, J. Christen, D. Bimberg
Growth and characterization of MOCVD grown GaN layers on Si(111)substrates
Proc. Mat. Res. Soc. Symp., Boston, USA (1999)
689 G.E. Cirlin, V.N . Petrov, V.G. Dubrovskii, Yu.B. Samsonenko, .K. Polyakov, A.O. Golubok, S.A. Masalov, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kosvh, M.V. Maximov, A.F. Tsatsul'nikov, V.B. Volovik, A.E. Zhukov, P.S. Kop'ev, N.N. Ledentsov, Zh.I. Al
abstract Heteroepitaxial growth of InAs on Si: a new type of quantum dot
Semiconductors 33, 972 (1999)
690 V.M. Ustinov, A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
High output power CW operation of a uantum dot laser
Proc. 26th Intern. Symp. Compounds of Semiconductors, Inst. Phys. Conf. Ser. No 166, 277 (1999)
691 A. Strittmatter, A. Krost, J. Bläsing, D. Bimberg
HIgh quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates
phys. stat. sol. (a) 176, 611 (1999)
692 R. Heitz, I. Mukhametzhanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg
Hot carrier relaxation in InAs/GaAs quantum dots
Physica B 272, 8 (1999)
693 G. Unterbörsch, Th. Engel, D. Rohde, M. Rohde, D. Bimberg, G. Grosskopf
Hybrid and monolithic integrated optic/millimeter-wave converters for 60 GHz radio-over-fiber systems
Optical Fiber Communication Conf, 1999, and the Intern. Conf. on Integrated Optics and Optical Fiber Communication OFC/IOOC'99, Technical Digest 1, 117 (1999)
694 Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg
In enrichment in (In,Ga)As/GaAs Quantum Dots studied by high-resolution X-ray diffraction and pole figure analysis
Appl. Phys. Lett. 75, 2957 (1999)
695 E.H. Böttcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg
InAs/GaAs quantum dots: a material for very high-speed, long-wavelength photodetectors on GaAs
Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 327 (1999)
696 V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, A.V. Lunev, B.V. Volovik, I.L. Krestnikov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 µm
Appl. Phys. Lett. 74, 2815 (1999)
697 A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, W.V. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
Incorporation of As in GaN layers during MOCVD growth
Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city> , p. 41 (1999)
698 N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg, V.P. Kalosha, J.A. Lott, A.O. Kosogov, P. Werner
Influence of gain spectrum on cavity modes in quantum dot vertical cavity lasers
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
699 N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, V.M. Ustinov, I.L. Krestnikov, A.V. Lunev, A.V. Sakharov, B.V. Volovik, N.N. Ledentsov, P.S Kop'ev, Zh.I. Alferov, D. Bimberg
abstract InGaAs/GaAs structures with quantum dots in vertical optical cavitites for wavelength near 1.3 µm
Semiconductors 33, 586 (1999)
700 W. Schlaak, Th. Engel, A. Umbach, W. Passenberg, A. Seeger, R. Steingrüber, C. Schramm, G.G. ekonnen. G. Unterbörsch, H.G. Bach, D. Bimberg
InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38 / 60 GHz narrowband photoreceivers
Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 399 (1999)
701 O. Stier, M. Grundmann, D. Bimberg
Inter- and intraband transitions in strained quantum dots modeled in eight-band k•p theory
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
702 N.N. Ledentsov, D. Bimberg, V.M. Ustinov, M.V. Maximov, Zh.I. Alferov, V.P. Kalosha, J.A. Lott
Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser
Semiconductor Science and Technology 14, 99 (1999)
703 N.N. Ledentsov, A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, A. Hoffmann
Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices
Appl. Phys. Lett. 74, 161 (1999)
704 A.R. Kovsh, A,E, Zhukov, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maksimov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, E.Yu. Kontrat’eva, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
Semiconductors 33, 929 (1999)
705 M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, I.N. Kaiander, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
Lasing from quantum dots formed by activated alloy spinodal decomposition on InAs stressors
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 135 (1999)
706 B.V. Volovik, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, A.F. Tsatsul’nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner
Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without external optical confinement
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
707 B.V. Volovik, A.F. Tsatsul’nikov, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, A.A. Suvorova, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, P. Werner
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Seminconductors 33, 901 (1999)
708 A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
Appl. Phys. Lett. 75, 1926 (1999)
709 O. Reimann, D. Huhse, E.H. Böttcher, D. Bimberg, H.D. Stahlmann
Low jitter dual semiconductor laser system using electrical phase shift for fast temporal scanning in time-resolved pump and probe experiments
Proc. CLEO, Pacific Rim '99 W13, 203 (1999)
710 A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, NN.A. Maleev, S.S. Mikhrin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
Low threshold lasing in 1.3 µm range in the structure based on InAs/InGaAs quantum dots
Proc. Intern. Symp. on Compound Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Berlin</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> , Th A3.3 (1999)
711 Strittmatter, A. Krost, M. Straßburg, V. Türck, D. Bimberg, J. Bläsing, J. Christen
Low-pressure metal organic chemical vapor depostion of GaN on silicon(111) substrates using an AlAs nucleation layer
Appl. Phys. Lett. 74, 1242 (1999)
712 Strittmatter, A. Krost, V. Türck, M. Straßburg, D. Bimberg, J. Bläsing, T. Hempel, J. Christen, B. Neubauer, D. Gerthsen, T. Christmann, B.K. Meyer
LP-MOCVD growth of GaN on silicon substrates – comparison between AlAs and ZnO nucleation layers
Mat. Sci. Eng. B 59, 29 (1999)
713 M. v. Ortenberg, H. Wißmann, L. Parthier, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg
Magneto condensation and probing of nanostructures by high magnetic fields
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
714 H. Born, A.R. Goni, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg
Magnetoluminescence of annealed self-organized InGaAs/GaAs quantum dots
phys. stat. sol. (b) 215, 313 (1999)
715 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner
Middle infrared emission from InAs quantum dots in a GaAs matrix
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
716 M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann
Modeling of quantum dot optical properties using micro-states
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
717 A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
J. Crystal Growth 201/202, 1117 (1999)
718 M. Straßburg, U.W. Pohl, D. Bimberg
MOVPE-grown ZnMgCdSe structures on InP
Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 115 (1999)
719 V. Türck, D. Bimberg
Nanotechnology in optoelectronics: trends and prospects
mst news, intern. newsletters on microsystems, 17 (1999)
720 Th. Engel, G. Unterbörsch, R. Hübsch, G.G. Mekonnen, D. Bimberg
Noise and nonlinearity of monolithic 38 GHz photoreceiver for OPTIC/mm-wave conversion
Proc. European Conference on Optical Communication, ECOC’99, Nice. <st1:country-region w:st="on"><st1:place w:st="on">France</st1:place></st1:country-region> (1999)
721 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner
Optical and structural properties of InAs quantum dots in a GaAs matrix for a sprectral range up to 1.7 µm
Appl. Phys. Lett. 75, 2347 (1999)
722 P. Yu, W. Langbein, K. Leosson, J.M. Hvam, N.N. Ledentsov, D. Bimberg, V. M. Ustinov, A.Yu. Egorov, A.E. Zhukov
Optical anisotropy in vertically coupled quantum dots
Phys. Rev. B 60, 16680 (1999)
723 R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, P. Werner, U. Gösele
Optical properties of InAs quantum dots in a Si matrix
Appl. Phys. Lett. 74, 1701 (1999)
724 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Optical properties of structures with single and multiple InGaN insertions in a GaN matrix
phys. stat. sol. (b) 216, 435 (1999)
725 M.V. Maximov, D.A. Bedarev, A.Yu Egorov, P.S. Kop’ev, A.R. Kovsh, A.V. Lunev, Yu.G. Musikhin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
Optimization of quantum dot lasers by seeding of quantum dots
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
726 L. Köhne, A. Dadgar, D. Bimberg, M. Zafar Iqbal, U.S. Qurashi, T. Grundemann,H. Schumann
Osmium related deep levels in indium phosphide
phys. stat. sol. (a) 171, 521 (1999)
727 I.L. Krestnikov, W.V. Lundin, A.V. Sakharov., V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N . Ledentsov, A. Hoffmann, D. Bimberg
Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature
phys. stat. sol. (b) 216, 511 (1999)
728 G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, J. Herrmann, N.N. Ledentsov, I.L. Krestnikov, Zh.I. Alferov, D. Bimberg
Polarization splitting of the gain band in quantum wire and quantum dot arrays
Phys. Rev. B59, 12275 (1999)
729 D. Bimberg
QD lasers up to and beyond 1300 nm
Digest of the LEOS Summer Topical Meetings, 17 (1999)
730 M. Grundmann, F. Heinrichsdorff, C. Ribbat, M.-H. Mao, D. Bimberg
Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation
Appl. Phys. B 69, 413 (1999)
731 M. Straßburg, R. Engelhardt, R. Heitz, U.W. Pohl, S. Rodt, V. Türck, A. Hoffmann, D. Bimberg, I.L. Krestnikov, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen
Quantum dots formed by ultrathin CdSe-ZnSe insertions
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 13 (1999)
732 D. Bimberg
Quantum dots: paradigm changes in semiconductor physics
semiconductors 33, 951 (1999)
733 A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg
abstract Quantum-dot injection heterolaser with 3.3 W output power
Tech. Phys. Lett. 25, 438 (1999)
734 G. Sek, J. Misiewicz, K. Ryczko, M. Kubisa, F. Heinrichsdorff, O. Stier, D. Bimberg
Room temperature photoreflectance of MOCVD-grown InAs/GaAs quantum dots
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 110, 657 (1999)
735 P. Borri, W. Langbein, J. Mork, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg
Room-temperature dephasing in InAs/GaAs quantum dots
Proc. CLEO/QUELS’99, Baltimore Convention Center, Baltimore, USA, 46 (1999)
736 R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen
Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures
J. Appl. Phys. 86, 5578 (1999)
737 I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser
Appl. Phys. Lett. 75, 1192 (1999)
738 van Gelen, J.J.M. Binsma, T. van Dongen, A. van Leerdam, A. Dadgar, D. Bimberg, O. Stenzel, H. Schumann
Ruthenium doped high power 1.48 µm SIPBH Laser
Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 203 (1999)
739 V.A. Shchukin, D. Bimberg
Self-ordering in multisheet arrays of 2D strained islands
Thin Solid Films 357, 66 (1999)
740 A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, M.V. Maksimov, G.E. Cirlin, N.N. Ledentsov, D. Bimberg, P. Werner, Zh.I. Alferov
Self-organized InAs quantum dots in a silicon matrix
J. Cryst. Growth 201/202, 1202 (1999)
741 E. Martinet, M.-A. Dupertuis, E. Kapon, O. Stier, M. Grundmann, D. Bimberg
Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
742 M.V. Maximov, Yu.M. Shernyakov, I.N. Kaiander, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop’ev, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul'nikov, V.M. Ustionov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
Single transverse mode operation of long wavelength (~1.3 µm)InAsGaAs quantum dot laser
Electronics Lett. 35, 2038 (1999)
743 D. Bhattacharyya, E.A. Avrutin, A.C. Bryce, J.M. Gray, J.H. Marsh, D. Bimberg, F. Heinrichsdorff, V.M. Ustinov, S.V. Zaitsev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, A.I. Onishchenko, E.P. O’Reilly
Spectral and dynamic properties of InAs/GaAs self-organized quantum dot lasers
IEEE J. Quantum El. 5, 648 (1999)
744 V.A. Shchukin, D. Bimberg
Spontaneous ordering of nanostructures on crystal surfaces
Rev. of Modern Physics 71, 1125 (1999)
745 N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg
Structural studies of stacked InAs quantum dots in a Silicon matrix grown by MBE
41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
746 N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg
Structure of InAs quantum dots in Si matrix investigated by high resolution electron microscopy
Proc. 7th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 216 (1999)
747 N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg
Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and modelling
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (1999)
748 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul’nikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
Surface-mode lasing from optically pumped InGaN/GaN heterostructures
Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 124 (1999)
749 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Surface-mode lasing from stacked InGaN insertions in a GaN matrix
Appl. Phys. Lett. 74, 3921 (1999)
750 Umbach, Th. Engel, H.-G. Bach, S. v. Waasen, E. Dröge, A. Strittmatter, W. Ebert, W. Passenberg, R. Steingrüber, W. Schlaak, G.G. Mekonnen, D. Bimberg, G. Unterbörsch
Technology of InP-based 1.55 µm ultrafast OEMMICs: 40 Gbit/s broadband and 38 / 60 GHz narrow-band photoreceivers
IEEE J. Quantum El. 35, 1024 (1999)
751 R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg
Temperature-dependent optical properties of self-organized InAs/GaAs quantum dots
J. Elec. Mat. 28, 520 (1999)
752 H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch
The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy
phys. stat. sol. (b) 215, 865 (1999)
753 M. Straßburg, R. Heitz, V. Türck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, L.L. Krestnikow, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen
Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices
J. El. Mat. 28, 506 (1999)
754 P. Borri, W. Langbein, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg
Ultrafast dynamics in InAs/GaAs quantum dot amplifiers
in: Conf. on Lasers and Electro-Optics, OSA Techn. Digest, Washington DC, USA, 321 (1999)
755 P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Ultrafast gain and index dynamics in InAs/InGaAs quantum dot amplifiers
Proc. 25th European Conference on Optical Communication, ECOC’99, Techn. Digest, 74 (1999)
756 I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, Rosenauer, D. Gerthsen
Vertical arrangement and wavefunction control in structures with 2d quantum dots
Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>, p. 71 (1999)
757 A.Krost, F.Heinrichsdorff, D.Bimberg, J.Bläsing, A.A.Darhuber, G.Bauer
X-ray analysis of self-organized InAs/InGaAs quantum dot structure
Cryst. Res. Techn. 34, 89 (1999)
758 S.S. Mikhrin, A.E. Zhukov,. A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.P. Soshnikov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov
abstract 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Semicond. Sci. Technol. 15, 1061 (2000)
759 N.N. Ledentsov, M.V. Maximov, D. Bimberg, T. Maka, C.M. Sotomayor Torres, I.V. Kochnev, I.L. Krestnikov, V.M. Lantratov, N.A. Cherkashin, Yu.M. Musikhin, Zh.I. Alferov
1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
Semicond. Sci. Technol. 15, 604 (2000)
760 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, D.A. Livshits, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg
3.5 W continuous wave operation from quantum dot laser
Mat. Scie. Eng. B 74, 70 (2000)
761 M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel, S. Itoh, K. Nakano, A. Ishibashi
A new approach to improved green emitting II-VI laser diodes
Conf. Digest 17th Intern. Semiconductor Laser Conf., 25-28 Sep, p. 1053 (2000)
762 S.S. Mikhrin, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.N. Kayander, E.Yu. Kondrat'eva, D.A. Livshits, U.S. Tarasov, M.V. Maksimov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov
abstract A spatially single-mode laser for a range of 1.25 < 1.28 µm on the basis of InAs quantum dots on a GaAs substrate
Semiconductors 34, 119 (2000)
763 O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg
Biexciton binding energy in InAs/GaAs quantum dots - a local probe for the dot geometry
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1265 (2000)
764 D. Bimberg, N.N. Ledentsov
Birth of quantum dot devices: Paradigm changes
Semiconductor News 9, 37 (2000)
765 R. Wetzler, A. Wacker, E. Schöll, C.M.A. Kapteyn, R. Heitz, D. Bimberg
Capacitance-voltage characteristics of self-organized InAs/GaAs quantum dots embedded in a pn structure
Appl. Phys. Lett. 77, 1671 (2000)
766 R. Wetzler, C.M.A. Kapteyn, R. Heitz, A. Wacker, E. Schöll, D. Bimberg
Capacitance-voltage characteristics of self-organized quantum dots embedded in a pn junction
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1093 (2000)
767 C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg
Carrier Emission Processes in InAs Quantum Dots
Physica E 7, 388 (2000)
768 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov
Carrier escape and level structure of InAs/GaAs quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1045 (2000)
769 M.V. Maximov, A.F. Tsatsul'nikov, D.S. Sizov, Yu.M. Shernyakov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres
Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation
Nanotechnology 11, 309 (2000)
770 U.W. Pohl, Matthias Straßburg, Martin Straßburg, I.L. Krestnikov, R. Engelhardt, S. Rodt, D. Bimberg
CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers
J. Cryst. Growth 214/215, 717 (2000)
771 V . Türck, S. Rodt, R. Heitz, O. Stier, M. Straßburg, U.W. Pohl, D. Bimberg
Charged excitons and biexcitons in self-organized CdSe quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1369 (2000)
772 M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, D. Schikora
Coexistence of Planar and Three-dimensional Quantum Dots in CdSe/ZnSe Structures
Appl. Phys. Lett. 76, 685 (2000)
773 P. Borri, W. Langbein, J.M. Hvam, D. Bimberg
Coherent versus incoherent dynamics in InAs quantum dots: The role of elastic dephasing
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1221 (2000)
774 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov
Comparison of hole and electron emission from InAs quantum dots
Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 375 (2000)
775 A.R. Goni, A. Cantarero, H. Scheel, S. Reich, C. Thomsen, P.V. Santos, F. Heinrichsdorff, D. Bimberg
Different temperature renormalizations for heavy and light-hole states of monolyer-thick heterostructures
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 116, 121 (2000)
776 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, Zh.I. Alferov
Effect of annealing on phase separation in ternary III-N alloys
Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (2000)
777 L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg
abstract Effect of excited-state transitions on the threshold characteristics of a quantum dot laser
Proc. SPIE, Physics and Simulation of Optoelectronic Devices VIII 3944, 823 (2000)
778 V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg
Effect of random field fluctations on excitonic transitions of individual CdSe quantum dots
Phys. Rev. B 61, 9944 (2000)
779 A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov
Electrically and optically pumped mid-infrared emission from quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1157 (2000)
780 <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A. Hoffmann, D. Bimberg, Zh.I. Alferov
Electromagnetic response of 3D arrays of quantum dots
J. Elec. Mat. 29, 494 (2000)
781 M. Grundmann, O. Stier, A. Schliwa, D. Bimberg
Electronic structures of cleaved-edge-overgrowth strain induced quantum wires
Phys. Rev. B 61, 1744 (2000)
782 C.M.A. Kapteyn, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, G. abstractreiter
Fermi-filling of Ge quantum dots in Si
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1053 (2000)
783 I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, I.V. Kochnev, V.M. Lantratov, N.A. Cherkashin, Yu.G. Musikhin, Zh.I. Alferov
Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral range grown by metal-organic chemical vapor deposition
Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 355 (2000)
784 A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, Zh.I. Alferov, B.Ya. Ber, V.V. Tret'yakov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu.G. Musikhin, L.P. Soshnikov, D. Lit
Formation of GaAsN nanoinsertions in a GaN matrix
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 395 (2000)
785 A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut
abstract Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
Semicond. Sci. Technol. 15, 766 (2000)
786 M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg
GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report
J. Elec. Mat. 29, 476 (2000)
787 G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, .N.N. Ledentsov, . Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele
Heteroepitaxial growth of InAs on Si: The new Type of quantum dots
Mater. Phys. Mech. 1, 15 (2000)
788 D. Bimberg
High power quantum dot lasers
Conf. Digest of Lasers and Electro-Optics Europe 2000, 10-15 Sep, 1 (2000)
789 F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1100 nm
Appl. Phys. Lett. 76, 556 (2000)
790 Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg
High power quantum dot lasers at 1140 nm
17th Intern. Semiconductor Laser Conf. 2000, Conf. Digest 2000, IEEE, p. 131 (2000)
791 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov
Hole and electron emission from InAs quantum dots
Appl. Phys. Lett. 76, 1573 (2000)
792 G.E. Cirlin, V.A. Egorov, V.N. Petrov, A.O. Golubok, N.I. Komyak, N.K. Polyakov, Yu.B. Samsonenko, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. <st1:place w:st="on"><st1:city w:st="on">Bimberg</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele
InAs nanostructures in a silicon matrix: Growth and properties
Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 51 (2000)
793 J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm
Electronics Lett. 36, 1384 (2000)
794 A.B. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A. Bedarev, A.F. Tsatsul'nikov, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Influence of growth interruptions and gas ambient on optical and structural properties of InGaN/GaN multilayer structures
Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 241 (2000)
795 A.S. Usikov, W.V.Lundin, D.A. Bedarev, E.E. Zavarin, A.F. Sakharov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Influence of the thick GaN buffer growth conditions on the electroluminescence properties of GaN/InGaN multilayer heterostructures
Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 875 (2000)
796 M.V. Maximov, I.L. Krestnikov, Yu.M. Shernyakov, A.E. Zhukov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres
InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices
J. Elec. Mat. 29, 487 (2000)
797 A. Dadgar, J. Christen, S. Richter, F. Bertram, A. Diez, J. Bläsing, A. Krost, A. Strittmatter, D. Bimberg, A. Alam, M. Heuken
InGaN blue light emitter grown on Si(111) using an AlAs seed layer
Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, 845 (2000)
798 D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg
Investigations on the formation kinetics of CdSe quantum dots
J. Cryst. Growth 214/215, 698 (2000)
799 D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg
Investigations on the Stranski-Krastanov growth of CdSe quantum dots
Appl. Phys. Lett. 76, 418 (2000)
800 D. Bimberg, M. Grundmann
Kleine Teilchen - große Wirkung
GEO 5, 205 (2000)
801 I.L. Krestnikov, A.V. Sakharov, V.W. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul'nikov, N. N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, D. Bimberg
abstract Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
Semiconductors 34, 481 (2000)
802 I.L. Krestinikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, A. Hoffmann, D. Bimberg
Lasing in vertical direction in structures with InGaN quantum dots
phys. stat. sol. (a) 180, 91 (2000)
803 Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude, D. Hommel
Lateral-index guided ZnCdSSe-based lasers
J. Cryst. Growth 214/215, 1054 (2000)
804 <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, D. Bimberg
Light confinement in a quantum dot
Semicond. Sci. Technol. 15, 1-6 (2000)
805 V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg
Line broadening and localization mechanisms in CdSe / ZnSe quantum dots
J. Luminescence 87-89, 337 (2000)
806 V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernykov, E.Yu. Kondrat'eva, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, J.A. Lott, D. Bimberg
Long wavelength quantum dot lasers on GaAs substrates
Nanotechnology 11, 397 (2000)
807 V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, A.F. Tsatsul'nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, P.S. Kop'ev, Zh.I. Alferov, L.E. Vorob'ev, D.A. Firsov. A.A. Suvorova, I.P. Soshnikov, P. Werner, N.N. Ledentsov, D. Bimberg
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Microelectronic J. 31, 1 (2000)
808 M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel
Low threshold current densities for II-VI lasers
Electronics Lett. 36, 878 (2000)
809 A.R. Goni, H. Born, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg
Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/Gaas quantum dots
Jpn. J. Appl. Phys. 39, 3907 (2000)
810 R. Heitz, F. Guffarth, <st1:place w:st="on">I.</st1:place> Mukhamethzahnov, M. Grundmann, A. Madhukar, D. Bimberg
Many-body effects on the optical spectra of InAs/GaAs quantum dots
Phys. Rev. B 62, 16881 (2000)
811 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter
Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy
Appl. Phys. Lett. 77, 4169 (2000)
812 V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, Y.G. Musikhin, A.F. Tsatsul'nikov, B.V. Volovik, D.A. Bedarev, M.V. Maximov, D.A. Livshits, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg
MBE growth, structural and optical characterization of InAs/InGaAlAs self-organized quantum dots
Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 57 (2000)
813 A.F. Tsatsul'nikov, B.V. Volovik, D. A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov
Mechanisms of InGaAlAs solid decomposition stimulated by InAs quantum dots
Semiconductors 34, 323 (2000)
814 Matthias Straßburg, Martin Straßburg, U.W. Pohl, D. Bimberg
Metalorganic vapor-phase epitaxy of ZnMgCdSe structures of InP
J. Cryst. Growth 214/215, 115 (2000)
815 R. Gibis, S. Schelhase, R. Steingrüber, G. Urmann, H. Künzel, S. Thiel, O. Stier, D. Bimberg
MOMBE selective infill growth of InP/GaInAs for quantum dot formation
J. Cryst. Growth 209, 499 (2000)
816 M. Meixner, R. Kunert, S. Bose, E. Schöll, V.A. Shchukin, D. Bimberg, E. Penev, P. Kratzer
<st1:place w:st="on">Monte Carlo</st1:place> simulation of the self-organised growth of quantum dots with anisotropic surface diffusion
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 381 (2000)
817 D. Bimberg, N.N. Ledentsov
Nano-Optoelectronics: From promise to realization
Proc. 7th Intern. Symp. on Trends and Applications of Thin Films, TATF‘2000, <st1:place w:st="on"><st1:city w:st="on">Nancy</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, March 2000, p. 120 (2000)
818 V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, Yu.G. Musikhin, V.B. Volovik, A. Schliwa, O. Stier, R. Heitz, D. Bimberg
New tools to control morphology of self-organized quantum dot nanostructures
Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 79 (2000)
819 Martin Straßburg, Th. Deniozou, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Schikora
Optical identification of quantum dot types in CdSe/ZnSe structures
J. Cryst. Growth 214/215, 756 (2000)
820 N.D. Zakharov, P. Werner, U. Gösele, V.M. Ustinov, G.E. Cirlin, B.V. Volovik, N.K. Polyakov, V.N. Petrov, V.A. Egorov, N.N. Ledenstov, Zh.I. Alferov, R. Heitz, D. Bimberg
Optical properties and structure of Si/InAs/Si layers grown by MBE on Si substrate
Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 322 (2000)
821 R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. <st1:place w:st="on"><st1:city w:st="on">Soshnikov</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele
Optical properties of InAs quantum dots in a Si matrix
Physica E 7, 317 (2000)
822 B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, Yu.G. Musikhin, V.A. Odnoblyudov, N.N. Ledentsov, D. Bimberg, V.M. Ustinov
Optical properties of InGaAsN/GaAs quantum well and quantum dot structures for longwavelength emission
Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 148 (2000)
823 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, A. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, D. Bimberg
Optical properties of quantum dots formed by activated spinodal decomposition of GaAs-based lasers emitting at ~ 1.3 µm
Microelectronic Engineering 51-52, 61 (2000)
824 M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg
Optical Properties of Self-organized Quantum Dots: Modelling and Experiments
phys. stat. sol. (a) 178, 255 (2000)
825 O. Schulz, M. Straßburg, U.W. Pohl, D. Bimberg, A. Itoh, K. Nakano, A. Ishibashi, M. Klude, D. Homel
Optimised implantation-induced disordering for lowering of the threshold current density of II-VI laser diodes
phys. stat. sol.(a) 180, 213 (2000)
826 S. Rodt, V. Türck, R. Heitz, M. Straßburg, U.W. Pohl, D. Bimberg
Phonon-assisted energy transfer from barrier states into quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1231 (2000)
827 R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg
Phonon-assisted exciton-transitions in self-organized InAs/GaAs quantum dots
Physica E 7, 398 (2000)
828 A.E. Zhukov, A.R Kovsh, S.S. Mikhrin, N.A. Maleev, V.A. Odnoblyudov, V.M. Ustinov, Yu.M. Shernyakov, E.Yu. Kondrat'eva, D.A. Livshits, IS. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg
Power conversion efficiency of quantum dot laser diodes
Semiconductors 34, 609 (2000)
829 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov
Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
Jpn. J. Appl. Phys. 39, 2341 (2000)
830 F. Romstad, P. Borri, J. Moerk, J. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Pulse distortion in a quantum dot amplifier
Conf. on Lasers and Electro-Optics (CLEO 2000), p. 471 (2000)
831 D. Bimberg, N.N. Ledenstov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov
Quantum dot lasers
Proc. LEOS 2000 IEEE 13th Annual Meeting, Rio Grande, Puerto Rico, p. 302 (2000)
832 D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsul'nikov, P.S. Kop'ev, Zh.I. Alferov
Quantum Dot Lasers: Breakthrough in optoelectronics
Thin Solid Films 367, 235 (2000)
833 N.N. Ledentsov, D. Bimberg, V.M. Ustinov, J.A. Lott, Zh.I. Alferov
Quantum dot lasers: The promises come to reality
Memoirs of The Institute of Scientific and Industrial Research, <st1:city w:st="on"><st1:place w:st="on">Osaka</st1:place></st1:city> 57, 80 (2000)
834 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, N.N. Ledentsov, D. Bimberg
Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors
Physica E 7, 326 (2000)
835 N.N. Ledentsov, I.L. Krestnikov, M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen
Quantum dots formed by ultrathin insertions in wide gap matrices
Thin Solid Films 367, 40 (2000)
836 C. Meyne, U.W. Pohl, W. Richter, M. Straßburg, A. Hoffmann, V. Türck, S. Rodt, D. Bimberg, D. Gerthsen
Quantum island formation in CdS/ZnS heterostructures grown by MOVPE
J. Cryst. Growth 214/215, 722 (2000)
837 R. Heitz, O. Stier, I. Mukhametzhanov, A. Madhukar, D. Bimberg
Quantum size effect in self-organized InAs/GaAs quantum dots
Phys. Rev. B 62, 11017 (2000)
838 N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov
Quantum-Dot Heterostructure Lasers
IEEE, J. of Selected Topics in Quant. Electr. 6, 439 (2000)
839 D. Bimberg, N.N. Ledentsov
Quantum-Dot Lasers: From promise to reality
Proc. SPIE’s Intern. Symp. Optoelectronics 2000 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 790 (2000)
840 M. Straßburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, D. Schikora
Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanow mode
phys. stat. sol. (a) 180, 281 (2000)
841 R. Heitz, H. Born, A. Hoffmann, D. Bimberg, I. Mukhametzhanov, A. Madhukar,
Resonant Raman scattering in self-organized InAs/GaAs quantum dots
Appl. Phys. Lett. 77, 3746 (2000)
842 R. Heitz, H. Born, T. Lüttgert, A. Hoffmann, D. Bimberg
Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots
phys. stat. sol. (b) 221, 65 (2000)
843 J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg
Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm
Proc. LEOS 2000 IEEE 13th Annual Meeting, <st1:city w:st="on">Rio Grande</st1:city>, <st1:place w:st="on">Puerto Rico</st1:place> , p. 304 (2000)
844 P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Room-temperature dephasing in InAs quantum dots
phys. stat. sol. (a) 178, 337 (2000)
845 D. Bimberg, F. Heinrichsdorff, N.N. Ledentsov, V.A. Shchukin
Self-organized growth of semiconductor nanostructures for novel light emitters
Appl. Surf. Sci. 159-160, 1 (2000)
846 E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol, E. Kapon, O. Stier, M. Grundmann, D. Bimberg
Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires
Phys. Rev. B 61, 4488 (2000)
847 R. Heitz, H. Born, A. Hoffmann, F. Guffarth, D. Bimberg
Shape-dependent phonon bottleneck in InGaAs/GaAs quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1167 (2000)
848 P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Spectral hole-burning and carrier-heating dynamics in quantum dot amplifiers
IEEE, J. of Selected Topics in Quant. Electr. 6, 544 (2000)
849 V.A. Shchukin, N.N. Ledentsov, D. Bimberg
Spontaneous formation of arrays of strained islands: Thermodynamics versus kinetics
Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 23 (2000)
850 N.A. Maleev, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, D.A. Bedarev, B.V. Volovik, I.L. Krestnikov, I.N. Kayander, V.A. Odnoblyudov, A.A. Suvorova, A.F. Tsatsul'nikov, Yu.M. Shernyakov, N.N. Ledentsov, PlS. Kop'ev, Zh.I. Alferov, D. Bimberg
abstract Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
Semiconductors 34, 594 (2000)
851 A. Strittmatter, D. Bimberg, A. Krost, J. Bläsing, P. Veit
Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer
J. Cryst. Growth 221, 293 (2000)
852 N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov, V.N. Petrov, V.A.Egorov, G.E. Cirlin
Structure and optical properties of Si/InAs/Si layers grown by mbe on Si substrate at different temperatures
Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 249 (2000)
853 N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
Appl. Phys. Lett. 76, 2677 (2000)
854 R. Sellin, F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg
Surface flattering during MOCVD of thin GaAs layers covering InGaAs quantum dots
J. Cryst. Growth 221, 581 (2000)
855 L. Müller-Kirsch, U.W. Pohl, R. Heitz, H. Kirmse, W. Neumann, D. Bimberg
Thin GaSb insertions and quantum dot formation in GaAs by MOCVD
J. Cryst. Growth 221, 611 (2000)
856 P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection
Appl. Phys. Lett. 76, 1380 (2000)
857 M. Straßburg, V. Kutzer, M. Dworzak, A. Hoffmann, R. Heitz, D. Bimberg, I. Kudryashov, K. Lischka, D. Schikora
Time-resolved studies and high-excitation properties of CdSe/ZnSe quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1323 (2000)
858 I.L. Krestnikov, H. Born, T. Lüttgert, R. Heitz, A.F. Tsatsul'nikov, B.V. Volovik, M.V. Maximov, Yu.G. Musikhin, A.R. Kovsh, N.A. Maleev, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov, A. Hoffmann, Zh.I. Alferov, D. Bimberg
Time-resolved studies of large In GaAs/GaAs quantum dots
Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1241 (2000)
859 M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyskov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, R. Heitz, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Yu.G. Musikhin, W. Neumann
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
Phys. Rev. B 62, 16671 (2000)
860 P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg
Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
IEEE Photonics Techn. Lett. 12, 594 (2000)
861 Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi
Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering
Electronics Lett. 36, 44 (2000)
862 J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg
Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrages emitting at 1.3 µm
Conf. Digest of 17th Intern. Conf. of Semiconductor Laser Conf., 25-28 Sep, 13 (2000)
863 A.F. Tsatsul'nikov, A.R. Kovsh, A.E. Zhukov, Yu.M. Shernyakov, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, A.M. Mintairov, J.L. Merz, N.N. Ledentsov, D. Bimberg
Volmer-Weber and Stranski-Krastanov InAs-(<st1:place w:st="on"><st1:city w:st="on">Al</st1:city>,<st1:state w:st="on">Ga</st1:state></st1:place>)As quantum dots emitting at 1.3 µm
J. Appl. Phys. 88, 6272 (2000)
864 Matthias Straßburg, Martin Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, D. Litvinov, D. Gerthsen, M. Schmidtbauer, P. Schäfer
ZnMgCdSe structures on InP grown by MOVPE
J. Christ. Growth 221, 416 (2000)