553            Th. Engel, A. Strittmatter, W. Passenberg, E. Dröge, A. Umbach, W. Schlaak, R. Steingrüber, A. Seeger, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg

                   38 GHz Narrow Band Photoreceiver OEIC with MSM Photodetector and HEMT Amplifier

                   Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 63 (1998)

 

554            E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, R. Steingrüber

                   70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation

                   Electron. Lett. 34, 1421 (1998)

 

555            E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, D. Bimberg, O. Reimann, R. Steingrüber

                   78 GHz distributed InGaAs MSM Photodetector

                   Electron. Lett. 34, 2241 (1998)

 

556            O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D.Bimberg, H.D. Stahlmann

                   Advanced Semiconductor Laser Based Electro-Optical Sampling System Using SolitonPulse Compression for Direct Probing at 1.55-µm Wavelength

                   Proc. LEOS ´98, Orlando 1, p. 215 (1998)

 

557            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop’ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott

                   Application of self-organized quantum dots to edge emitting and vertical cavity lasers

                   Physica E 3, 129 (1998)

 

558            St. Kollakowski, Ch. Lemm, E. H. Böttcher, D. Bimberg

                   Buried InAlGaAs/InP waveguides – etching, overgrowth, and characterization

                   IEEE Photon. Technol. Lett. 10, 114 (1998)

 

559            F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov

                   Carrier dynamics in type-II GaSb/GaAs qantum dots

                   Phys. Rev. B 57, 4635 (1998)

 

560            M. Grundmann, R. Heitz, D. Bimberg

                   Carrier statistics in quantum dot lasers

                   Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 772 (1998)

 

561            A. Khan, M.Z. Iqbal, U.S. Qurashi, M. Yamaguchi, N. Zafar, A. Dadgar, D. Bimberg

                   Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition

                   Jpn. J. Appl. Phys. 37, 4595 (1998)

 

562            R. Schneider, H. Kirmse, W. Neumann, M. Kappelt, F. Heinrichsdorff, A. Krost, D. Bimberg

                   Characterization of III-V quantum structures by EFTEM

                   Electron Microscopy III, 429 (1998)

 

563            A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen

                   Comparison between <st1:place w:st="on"><st1:city w:st="on">GaAs</st1:city>, <st1:state w:st="on">AlAs.</st1:state></st1:place> and AlN buffer layers for the growth of GaN layers on silicon substrates

                   Proc.Intern. Conf. on Silicon Carbide, III-nitrides and Related Materials, Stockholm, Sweden, p. 1145 (1998)

 

564            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott

                   Competitive vertical cavity and edge emitting quantum dot lasers

                   Proc. Conf. on Lasers and Electro-Optics Europe, CLEO <st1:place w:st="on">EUROPE</st1:place>, 14-18 Sep, p. 63 (1998)

 

565            V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg

                   Correlation of InGaAs/GaAs quantum dot and wetting layer formation

                   Appl. Surf. Sci. 123/124, 352 (1998)

 

566            Th. Engel, G.G. Mekonnen, A. Umbach, V. Breuer, H.-G. Bach, E.H. Böttcher, D. Bimberg

                   Design and modeling of narrow band InP-photoreceiver OEICs based on HEMTs and MSM photodetector

                   Proc. 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits WOCSDICE ‘98, Zeuthen (1998)

 

567            Th. Engel, A. Strittmatter, W. Passenberg, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, D. Bimberg

                   Design, fabrication and characterizaiton of narrow band photoreceiver OEISs based on InP

                   Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 75 (1998)

 

568            Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zehn, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Device characteristics and their anisotropy in high power quantum dots

                   Techn. Phys. Lett. 24, 50 (1998)

 

569            M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg

                   Diffusion of Cd, Mg and S IN ZnSe-based quantum well structures

                   Thin Solid Films 336, 208 (1998)

 

570            E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg

                   Distributed Millimeter-Wave InGaAs Metal-Semiconductor-Metal Photodetector

                   Technical Digest Intern. Topical Meeting on Microwave Photonics, MWP‘98, <st1:place w:st="on"><st1:city w:st="on">Princeton</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 173 (1998)

 

571            E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg

                   Distributed MSM Photodetectors for the <st1:place w:st="on"><st1:placename w:st="on">Long-Wavelength</st1:placename> <st1:placetype w:st="on">Range</st1:placetype></st1:place>

                   Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 57 (1998)

 

572            M. Straßburg, M. Kuttler, O. Stier, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel

                   Doping dependent Mg diffusion in ZnMgSSe/ZnSSe-structures

                   J. Crystal Growth 184/185, 465 (1998)

 

573            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott

                   Edge and vertical cavity surface emitting InAs quantum dot lasers

                   Solid-State Electronics 42, 1433 (1998)

 

574            A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maksimov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Effect of the quantum-dot surface density in the active region on injection-laser characteristics

                   Semiconductors 32, 997 (1998)

 

575            <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, V.P. Kalosha, N.N. Ledentsov, G.Ya. Slepyan, D. Bimberg

                   Effective-medium approach for certain laser active media

                   Proc. 7th Intern. Conf. on Complex Media Bianisotropics ‘98, A.F. Jacob and J. Reinert eds., Braunschweig, p. 81 (1998)

 

576            H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg

                   Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE

                   Mat. Sci. Eng. B51, 229 (1998)

 

577            M. Kuttler, M. Straßburg, V. Türck, R. Engelhardt, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel, J. Nürnberger, G. Landwehr

                   Efficient lateral index guiding of II-VI laser structures by implantation-induced disordering

                   J. Crystal Growth 184/185, 566 (1998)

 

578            M. Grundmann, O. Stier, D. Bimberg

                   Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots

                   Phys. Rev. B 58, 10557 (1998)

 

579            A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen

                   Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AlN butter layers

                   Proc.The Second Intern. Conf. on Nitride Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Tokushima</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 324 (1998)

 

580            R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg

                   Excited states and energy relaxation in stacked InAs/GaAs quantum dots

                   Phys. Rev. B 57, 9050 (1998)

 

581            G.F. Cirlin, V.N. Petrov, V.G. Dubrovski, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg

abstract    Fabrication of InAs quantum dots on silicon

                   Tech. Phys. Lett. 24, 290 (1998)

 

582            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott

                   Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers

                   Proc. IEEE Intern. Conf. on Compound Semiconduct., <st1:city w:st="on"><st1:place w:st="on">San Diego</st1:place></st1:city>, 1997, p. 547 (1998)

 

583            O. Stier, V. Türck, M. Kappelt, D. Bimberg

                   First observation of symmetry breaking in strained In_0.7Ga_0.3As/InP V-groove quantum wires

                   Physica E 2, 969 (1998)

 

584            A.F. Tsatsul’nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zhao Zhen, V.N. Petrov, G.E. Cirlin, D. Bimberg, P.S. Kop’ev, Zh.I. Alferov

                   Formation of InAs quantum dots in a GaAs matrix by growth on vicinal substrates

                   Semiconductors 32, 95 (1998)

 

585            A.F. Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Chao Chen, P.S. Kop'ev, Zh.I. Alferov, V.N. Petrov, G.F. Cirlin, D. Bimberg

abstract    Formation of InAs Quantum dots in a GaAs matrix during growth on misoriented substrates

                   Semiconductors å, 84 (1998)

 

586            G.E. Cirlin, V.G. Dubrovskii, V.N . Petrov, N.K. Polyakov, N.P. Korneevat, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.J. Komyak, V.M . Ustionov, A.Yu Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.E.

                   Formation of InAs quantum dots on silicon (100) surface

                   Semicond. Sci. Technol. 13, 1262 (1998)

 

587            A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop’ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Meltser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik,  M. Grundmann, D. Bimberg, Zh.I. Alferov

                   Formation of InSb quantum dots in a GaSb matrix

                   J. Electr. Mat 27, 414 (1998)

 

588            D. Bimberg, V.A. Shchukin, N.N. Ledentsov, A. Krost, F. Heinrichsdorff

                   Formation of self-organized quantum dots at semiconductor surfaces

                   Appl. Surf. Sci. 130-132, 713 (1998)

 

589            M. Straßburg, N.N. Ledentsov, A. Hoffmann, U.W. Pohl, D. Bimberg, I.L. Krestnikov,S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop'ev, Zh.I. Alferov

                   Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures

                   Physica E 2, 542 (1998)

 

590            M. Straßburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg, Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov

                   Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

                   Appl. Phys. Lett. 72, 942 (1998)

 

591            V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, U.W. Pohl, N.N. Ledentsov, D. Bimberg,  S.V. Ivanov

                   Gain to absorption conversion by increasing excitation density in excitonic wave­guides

                   J. Crystal Growth 184/185, 632 (1998)

 

592            D. Huhse, C. Warmuth, D. Bimberg, A.A. Sysoliatin, E.M. Dianov

                   Generation of ultrashort (<500 fs) wavelength tunable laser pulses by self-seeding and adiabatic soliton compression

                   Proc. CLEO/Europe ‘98, Glasgow, Paper CTu I 67, p. 102 (1998)

 

593            A. Dadgar, O. Stenzel, L. Koehne, A. Naeser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann

                   Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition

                   J. Cryst. Growth 195, 69 (1998)

 

594            D. Bimberg, M. Grundmann, N.N. Ledentsov

                   Growth, spectroscopy, and laser application of self-ordered III-V quantum dots

                   MRS Bulletin 23, 31 (1998)

 

595            M.v. Ortenberg, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg

                   High magnetic fields probing nanostructures: Magneto-condensation into quantum dots

                   Physica B 246/247, 88 (1998)

 

596            M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop’ev, L.V. Asryan, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner

                   High power continuous wave operation of InGaAs/AlGaAs quantum dot laser

                   J. Appl. Phys. 83, 5561 (1998)

 

597            A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg

                   High-gain excitonic lasing from a single InAs monolayer in bulk GaAs

                   Appl. Phys. Lett. 72, 1433 (1998)

 

598            St. Kollakowski, E.H. Böttcher, A. Strittmatter, D. Bimberg

                   High-speed InGaAs/InAlGaAs/InP waveguide-integrated MSM photodetector for the 1.3 – 1.55 µm wavelength range

                   Electron. Lett. 34, 587 (1998)

 

599            R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov

                   Hot carrier relaxation in InAs/GaAs quantum dots

                   Physica E 2, 578 (1998)

 

600            G.E. Cirlin, V.G. Dubrovski, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, N.N. Ledentsov,Zh.I. Alferov, D. Bimberg

                   InAs nanoscale islands on Si surface: a new type of quantum dots

                   Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 249 (1998)

 

601            G.E. Cirlin, V.N. Petrov, V.G. Dubrovsky, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg

                   InAs quantum dots on Si

                   Techn. Phys. Lett. 24, 10 (1998)

 

602            M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott

                   InAs/GaAs quantum dot injection lasers

                   Workbook of the Topical Meeting on "Radiative Processes and Dephasing in Solids", Coeurd'Aline, <st1:state w:st="on"><st1:place w:st="on">Idaho</st1:place></st1:state>, Trends in Optics and Photonics OSA Series 18, 34 (1998)

 

603            M. Kappelt, V. Türck, D. Bimberg

                   InAs_xP_1-x V-Groove quantum wires

                   Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 587 (1998)

 

604            F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg

                   Influence of In/Ga intermixing on the optical properties of InGaAs quantum dots

                   J. Cryst. Growth 195, 540 (1998)

 

605            M. Kappelt, V. Türck, D. Bimberg, H. Kirmse, I. Hähnert, W. Neumann

                   InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation

                   Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 552 (1998)

 

606            A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, N.V. Lukovskaya, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Injection laser based on composite InAlAs/InAs vertically coupled quantum dots in AlGaAs matrix

                   Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 386 (1998)

 

607            A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg

                   Lasing and electronic properties of a single InAs monolayer embedded in bulklike GaAs

                   Revista Mexicana de Fisica 44, 154 (1998)

 

608            B.V. Volovik, A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg

abstract    Lasing in Submonolayer InAs-AlGaAs structures without external optical confinement

                   Tech. Phys. Lett. 24, 567 (1998)

 

609            M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg

                   Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering

                   Appl. Phys. Lett. 73, 1865 (1998)

 

610            V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul’nikov, B.V. Volovik, P.S. Kop’ev, Z.I. Alferov, S.S. Ruvimov, Z. Liliental-Weber, D. Bimberg

                   Low threshold quantum dot injection laser emitting at 1.9 µm

                   Electr. Lett. 34, 670 (1998)

 

611            D. Bimberg, M. Grundmann, R. Heitz

                   Master equations for the micro-states description of carrier relaxation and recombination in quantum dots

                   Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 1 (1998)

 

612            F. Heinrichsdorff, A. Krost, K. Schatke, D. Bimberg, A.O. Kosogov, P. Werner

                   MOCVD growth and laser applications of In(Ga)As/GaAs quantum dots

                   Proc. of the Electrochem. Soc. PV 98-2, Light Emitting Devices for Optoelectronic Applicatons and State-of-the-art program on compound semiconductors XXVIII, eds. H.Q. Hou, R.E. Sah, S.J. Pearton, F. Ren, K. Wada, ISBN 1-56677-194-3, p. 164 (1998)

 

613            U. Pohl, R. Engelhardt, V. Türck, D. Bimberg

                   MOCVD of vertically stacked CdSe/ZnSSe quantum islands

                   Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 569 (1998)

 

614            L. Finger, M. Nishioka, M. Grundmann, R. Hogg, F. Heinrichsdorff, O. Stier, D. Bimberg, Y. Arakawa

                   Modification of energy relaxation of InGaAs quantum dots by postgrowth thermal annealing

                   Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 151 (1998)

 

615            Th. Engel, A., Strittmatter, W. Passenberg, A. Umbach, W. Schlaak, E. Dröge, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg,

                   Narrow-band photoreceiver OEIC on InP operating at 38 Ghz

                   IEEE Photon. Technol. Lett. 10, 1298 (1998)

 

616            M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg

                   Neuartige Halbleiterlaser auf der Basis von Quantenpunkten

                   Laser und Optoelektronik 30, 70 (1998)

 

617            M. Grundmann, R. Heitz, D. Bimberg

                   New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck

                   Physica E 2, 725 (1998)

 

618            Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

abstract    Operating characteristics and their anisotropy in high power laser (1.5 W, 300 K) with a quantum-dot active region

                   Tech. Phys. Lett. 24, 351 (1998)

 

619            Zhao Zhen, M.V. Maximov, N.N. Ledentsov, A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, V.B. Volovik, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, J. Böhrer, D. Bimberg

                   Optical characteristics of InGaAs vertically-coupled quantum dots

                   High Power Laser and Particle Beams 10, 43 (1998)

 

620            I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres

                   Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix

                   phys. stat. sol. (a) 168, 309 (1998)

 

621            A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov,  M. Grundmann, D. Bimberg, Zh.I. Alferov

                   Optical properties of InAlAs quantum dots in an AlGaAs matrix

                   Appl. Surf. Sci. 123/124, 381 (1998)

 

622            J. Christen, T. Hempel, F. Bertram, N.N. Ledentsov, D. Bimberg, A.V. Sakharov, M.V. Maximov, A.S. Vsikov, W.V. Lundin, B.V. Pushnyi, Zh.I.Alferov

                   Possible impact of surface morphology on stimulated emission in GaN-AlGaN double heterostructures

                   Physica E 2, 557 (1998)

 

623            D. Bimberg, M. Grundmann, N.N. Ledentsov

                   Quantum Dot Heterostructures

                   John Wiley & Sons Ltd., <st1:place w:st="on">Chichester</st1:place>, GB ISBN 0471973882 (1998)

 

624            N.N. Ledentsov, V.M. Ustinov, A.V. Shchukin, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Quantum dot heterostructures: fabrication, properties, lasers (Review)

                   Semiconductors 32, 343 (1998)

 

625            D. Bimberg

                   Quantum dot lasers – art and trends

                   Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> 1, p. 291 (1998)

 

626            N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, L.V. Vorob’ev, M. Grundmann, F. Heinrichsdorff, D. Bimberg, Zh.I. Alferov

                   Quantum dot lasers - experimental results

                   Proc. Advanced Research Workshop on Future Trends in Microelectronics: ‘Off the Beaten Path’, Ile des <st1:place w:st="on"><st1:city w:st="on">Embiez</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1998)

 

627            Th. Engel, E. Dröge, G. Unterbörsch, E.H. Böttcher, D. Bimberg

                   Reactive matching of millimetre-wave photodetectors using coplanar waveguide technology

                   Electron. Lett. 34, 1690 (1998)

 

628            A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg

                   Resonant waveguiding and lasing in structures with InAs submonolayers in an AlGaAs matrix

                   Proc. 6th Intern. Symp. on Nanostructures: 98 Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 382 (1998)

 

629            I.L. Krestnikov, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, A. Rosenauer, D. Gerthsen, C.M. Sotomayor Torres, D. Bimberg, Zh.I. Alferov

                   RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, MG)(S, Se) structures

                   Mat. Sci. Eng. B51, 26 (1998)

 

630            Krestnikov, M. Maximov, A.V. Sakharov, P.S. Kop'ev, Zh.I. Ålferov, N.N. Ledentsov, D. Bimberg, C.M. Sotomayor Torres

                   RT Lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattice

                   J. Crystal Growth 184/185, 545 (1998)

 

631            A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, H. Schumann, D. Bimberg

                   Ruthenium a new thermally stable compensator in InP

                   Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 57 (1998)

 

632            A. Dadgar, O. Stenzel, A. Näser, M. Zafar Iqbal, D. Bimberg, H. Schmann

                   Ruthenium: A superior compensator on InP

                   Appl. Phys. Lett. 73, 3878 (1998)

 

633            F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, P. Werner

                   Self organized defect free InAs/GaAs and InAs/InGaAs quantum dots with high lateral density grown on MOCVD

                   Appl. Surf. Sci. 123/124, 725 (1998)

 

634            I.L. Krestnikov, A.V. Sakharov, N.N. Ledentsov, I.P. Soshnikov, Yu.G. Musikhin, A.R. Kovsh, V.M. Ustinov, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Self-assembled formation of quantum dots during InGaAlAs quantum well growth

                   Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 257 (1998)

 

635            M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov

                   Semiconductor quantum dots for application in diode lasers

                   Thin Solid Films 318, 83 (1998)

 

636            M. Behringer, K. Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg

                   Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes

                   J. Crystal Growth 184/185, 580 (1998)

 

637            V.A. Shchukin, D. Bimberg

                   Strain-driven self-organization of nanostructures on semiconductor surfaces

                   Appl. Phys. Lett A 67, 687 (1998)

 

638            S. Ruvimov, Z. Lilienthal-Weber, J. Washburn, N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, P.S. Kop'ev, Zh.I. Alferov, D. Bimerg

abstract    Structural characterization of self-organized nanostructures

                   Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 781 (1998)

 

639            R. Engelhardt, V. Türck, U.W. Pohl, D. Bimberg, P. Veit

                   Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depo­sitions in ZnSSe matrix

                   J. Crystal Growth 184/185, 311 (1998)

 

640            V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg

                   Vertical correlations and anti-correlations in multi-layered arrays of 2D quantum islands

                   Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 253 (1998)

 

641            V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg

                   Vertical correlations and anticorrelations in multi-sheet arrays of two-dimensional islands

                   Phys. Rev. B 57, 12262 (1998)

 

642            I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D. Bimberg, C.M. Sotomayor Torres

                   Vertical coupling of quantum islands in the CdSe/ZnSe submonolayer superlattices

                   Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 187 (1998)

 

643            St. Kollakowski, E. Dröge, E.H. Böttcher, A. Strittmatter, O. Reimann, D. Bimberg

                   Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 µm

                   Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 266 (1998)

 

644            I.L. Krestnikov, N.A. Maleev, M.V. Maximov, A.F. Tsatsul’nikov, A.E. Zhukov, A.R. Kovsh, I.V. Kochnev, N.M. Schmidt, N.N. Ledentsov, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   1.06 and 1.3 µm resonant cavity.enhanced photodetectors based on InGaAs quantum dots

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 131 (1999)

 

645            A.F. Tsatsul’nikov, D.A. Bedarev, A.R. Kovsh, P.S. Kop’ev, N.N. Ledentsov, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, D. Bimberg, P. Werner

                   1.3 µm emission from 2 ML InAs quantum dots in a GaAs matrix

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 139 (1999)

 

646            A.F. Tsatsul’nikov, N.A. Bedarev, A.R. Kovsh, P.S. Kop'ev, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D. Bimberg

                   1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix

                   Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 261 (1999)

 

647            Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat’eva, P.S. Kop’ev. A.R. Kovsh. N.A.  Maleev, M.V. Maximov, S.S. Mikhrin, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov and D. Bimberg

                   1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

                   Electr. Lett. 35, 898 (1999)

 

648            V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, P.S. Kop’ev, Zh.I. Alferov, I.P. Soshnikov, N. Zakharov, P. Werner, D. Bimberg

                   1.75 µm emission from self-organized InAs quantum dots on GaAs

                   J. Crystal Growth 201/202, 1143 (1999)

 

649            A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, M.V. Maximov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   3.3 W injection heterolaser based on self-organized quantum dots

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 128 (1999)

 

650            A.R. Kovsh, A.E. Zhukov, D.A. Livshits, A.Yu. Egorov, V.M: <st1:place w:st="on">Ustinov</st1:place>, M.V. Maximov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   3.5 CW operation of quantum dot laser

                   Electronics Lett. 35, 1161 (1999)

 

651            A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul'nikov, I.P. Soshnikov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   3.9 W CW power from sub-monolayer quantum dot diode laser

                   Electronics Lett. 35, 1845 (1999)

 

652            M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov

                   4 Watt High Power Quantum Dot Lasers

                   41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)

 

653            St. Kollakowski, A. Strittmatter, E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, K. Janiak

                   65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3 – 1.55 µm wavelength regime

                   Appl. Phys. Lett. 74, 612 (1999)

 

654            O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch

                   Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

                   J. Vac. Sci. Technol. B 17, 1639 (1999)

 

655            D. Bimberg, V. Türck

                   Blaue Laserdioden

                   Verfahrenstechnik Marktübersicht 2000, Sonderveröffentlichung der Zeitschrift Verfahrenstechnik 33, 20 (1999)

 

656            Martin Straßburg, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, S. Schwedthelm, D. Schikora

                   Blue emission from Stranski-Krastanov CdSe quantum dots

                   Proc. Intern. Workshop on Advances in growth and characterization of II-VI semiconductors. <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> (1999)

 

657            R. Heitz, D. Bimberg, M.-H. Mao, F. Heinrichsdorff, P. Borri, J. MØrk, W. Langbein, J.M. Hvam

                   Carrier dynamics in quantum dots and quantum dot lasers

                   The 6th International Workshop on Femtosecond Technology, <st1:place w:st="on"><st1:city w:st="on">Chiba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, 147 (1999)

 

658            A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova, Yu.G. Musikhin, V.V. Ratnikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, D. Bimberg

                   Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient

                   Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 57 (1999)

 

659            D. Huhse, D. Bimberg

                   Competing mode suppression ratio of electrically wavelength tunable self-seeded lasers

                   IEEE Photon. Technol. Lett. 11, 167 (1999)

 

660            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Yu.M. Shernyakov, S.S. Mikhrin, N.A. Maleev, E. Yu. Kondrat’eva, D.A. Livshits, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

                   IEEE Photon. Technol. Lett. 11, 1345 (1999)

 

661            I.L. Krestnikov, M. Straßburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen

                   Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots

                   Phys. Rev. B 60, 8695 (1999)

 

662            A.E. Zhukov, V.M. Ustinov, A.R. Kovsh. A.Yu. Egorov, N.A. Maleev, N.N. Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov

                   Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status

                   Semicond. Sci. Technol. 14, 575 (1999)

 

663            H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch

                   Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

                   Appl. Phys. Lett 75, 106 (1999)

 

664            M.Z. Iqbal, U.S. Qurashi, A. Majid, A. Khan, N. Zafar, A. Dadgar, D. Bimberg

                   Deep levels associated with alpha irradiation of n-type MOCVD InP

                   Physica B 273, 839 (1999)

 

665            P. Borri, W. Langbein, J. Mørk, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Dephasing in InAs/GaAs quantum dots

                   Phys. Rev. B 60, 7784 (1999)

 

666            M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov

                   Diode lasers based on quantum dots

                   in: Advances in <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Physics (Festkörperprobleme), ed. B. Kramer 38, 203 (1999)

 

667            A. Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg

                   Direct evidence of In-enrichment in MOCVD-grown (In,Ga)As/GaAs quantum dots

                   Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 171 (1999)

 

668            E.H. Böttcher, H. Pfitzenmaier, E. Dröge, St. Kollakowski, A. Strittmatter, D. Bimberg

                   Distributed wave-guide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation

                   Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzer­land</st1:country-region></st1:place>, p. 79 (1999)

 

669            M.-H. Mao, F. Heinrichsdorff, D. Bimberg

                   Dynamic properties of InGaAs quantum dot lasers

                   Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 569 (1999)

 

670            G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, Y.B. Samsonenko, D.V. Denisov, V.M. Busov, B .V. Volovik, V.M. Ustinov, Z.I. Alferov, D. Bimberg, N.D. Zakharov, P. Werner

                   Effect of growth conditions on InAs nanoislands formation on Si(100) surface

                   Czechoslovak J. of Physics 49, 1547 (1999)

 

671            V.P. Kalosha, G.YA. <st1:place w:st="on"><st1:city w:st="on">Slepyan</st1:city>, <st1:country-region w:st="on">S.A.</st1:country-region></st1:place> Maksimeko, N.N. Ledentsov, O. Stier, M. Grundmann, D. Bimberg

                   Effective-medium approach for active medium of QD laser

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

672            F. Heinrichsdorff, N. Zhakarov, P. Werner, A. Krost, D. Bimberg

                   Electroluminescence of stacked In(Ga)As/GaAs QDs at 1.3 µm – 1.4 µm

                   41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)

 

673            C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg

                   Electron emission from InAs quantum dots

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

674            C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg, P. Werner

                   Electron escape from InAs quantum dots

                   Phys. Rev. B 60, 14265 (1999)

 

675            O. Stier, M. Grundmann, D. Bimberg

                   Electronic and optical properties of strained quantum dots modeled by 8-band-k•p theory

                   Phys. Rev. B 59, 5688 (1999)

 

676            D. Bimberg, O. Stier, M. Grundmann, C. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov

                   Electronic properties of self-organized quantum dots

                   Workbook 12. Deutsch-Japanisches Forum Informationstechnologie, Dresden, Germany (1999)

 

677            O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D. Bimberg, H.D. Stahlmann

                   Electrooptical sampling using 1.55-µm self-seeded semiconductor laser with soliton pulse compression

                   IEEE Photonics Techn. Lett. 11, 1024 (1999)

 

678            R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg

                   Enhanced polar exciton-LO-phonon interaction in quantum dots

                   Phys. Rev. Lett. 83, 4654 (1999)

 

679            R. Heitz, I. Mukhametzhanov, J. Zeng, P. Chen, A. Madhukar, D. Bimberg

                   Excitation transfer in novel self-organized quantum dot structures

                   Superlattices and Microstructures 25, 97 (1999)

 

680            A.F.Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg

abstract    Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host

                   Semiconductors 33, 467 (1999)

 

681            J. L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch

                   Finite linewidth observed in photoluminescence spectra of individual In_0.4Ga_0.6As quantum dots

                   J. Vac. Sci. Technol. B 17, 1632 (1999)

 

682            A.F. Tsatsul’nikov, A.Yu Egrov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, N.A. Bert, V.M. Ustinov, B.V. Volovik, A.E. Zhukov,  Zh.I. Alferov, G.E. Cirlin, A.O. Golubok, S.A. Masalov, V.N. Petrov, N.N. Ledentsov, R. Heitz, M. Grundmann, D. Bimberg, I.P. Soshnikov

                   Formation of InAs quantum dots in a silicon matrix

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

683            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, V.I. Kopchatov, A.V. Lunev, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov

                   Gain characteristics of quantum dot injection lasers

                   Semicond. Sci. Technol. 14, 118 (1999)

 

684            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov,  A.V. Lunev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

abstract    Gain characteristics of quantum-dot injection lasers

                   Semiconductors 33, 1013 (1999)

 

685            D. Huhse, O. Reimann, E.H. Böttcher, D. Bimberg

                   Generation of 290 fs laser pulses by self-seeding and soliton compression

                   Appl. Phys. Lett. 75, 2530 (1999)

 

686            D. Huhse, C. Warmuth, M. Schulze, D. Bimberg

                   Generation of short, wavelength tunable semiconductor laser pulses

                   Proc. SPIE’s Intern. Symp. Optoelectronics 99 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)

 

687            A..E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, E.Cu. Kondrat'eva, Yu.M. Shernyakov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Ground and excited state lasing near 1.3-µm from self-assembled quantum dots on GaAs substrates

                   Digest of the LEOS Summer Topical Meetings, p. 127 (1999)

 

688            A. Strittmatter, A. Krost, J. Bläsing, P. Veit, J. Christen, D. Bimberg

                   Growth and characterization of MOCVD grown GaN layers on Si(111)substrates

                   Proc. Mat. Res. Soc. Symp., Boston, USA (1999)

 

689            G.E. Cirlin, V.N . Petrov, V.G. Dubrovskii, Yu.B. Samsonenko, .K. Polyakov, A.O. Golubok, S.A. Masalov, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kosvh, M.V. Maximov, A.F. Tsatsul'nikov, V.B. Volovik, A.E. Zhukov, P.S. Kop'ev, N.N. Ledentsov, Zh.I. Al

abstract    Heteroepitaxial growth of InAs on Si: a new type of quantum dot

                   Semiconductors 33, 972 (1999)

 

690            V.M. Ustinov, A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   High output power CW operation of a uantum dot laser

                   Proc. 26th Intern. Symp. Compounds of Semiconductors, Inst. Phys. Conf. Ser. No 166, 277 (1999)

 

691            A. Strittmatter, A. Krost, J. Bläsing, D. Bimberg

                   HIgh quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates

                   phys. stat. sol. (a) 176, 611 (1999)

 

692            R. Heitz, I. Mukhametzhanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg

                   Hot carrier relaxation in InAs/GaAs quantum dots

                   Physica B 272, 8 (1999)

 

693            G. Unterbörsch, Th. Engel, D. Rohde, M. Rohde, D. Bimberg, G. Grosskopf

                   Hybrid and monolithic integrated optic/millimeter-wave converters for 60 GHz radio-over-fiber systems

                   Optical Fiber Communication Conf, 1999, and the Intern. Conf. on Integrated Optics and Optical Fiber Communication OFC/IOOC'99, Technical Digest 1, 117 (1999)

 

694            Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg

                   In enrichment in (In,Ga)As/GaAs Quantum Dots studied by high-resolution X-ray diffraction and pole figure analysis

                   Appl. Phys. Lett. 75, 2957 (1999)

 

695            E.H. Böttcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg

                   InAs/GaAs quantum dots: a material for very high-speed, long-wavelength photodetectors on GaAs

                   Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 327 (1999)

 

696            V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, A.V. Lunev, B.V. Volovik, I.L. Krestnikov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 µm

                   Appl. Phys. Lett. 74, 2815 (1999)

 

697            A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, W.V. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg

                   Incorporation of As in GaN layers during MOCVD growth

                   Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city> , p. 41 (1999)

 

698            N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg, V.P. Kalosha, J.A. Lott, A.O. Kosogov, P. Werner

                   Influence of gain spectrum on cavity modes in quantum dot vertical cavity lasers

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)

 

699            N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, V.M. Ustinov, I.L. Krestnikov, A.V. Lunev, A.V. Sakharov, B.V. Volovik, N.N. Ledentsov, P.S Kop'ev, Zh.I. Alferov, D. Bimberg

abstract    InGaAs/GaAs structures with quantum dots in vertical optical cavitites for wavelength near 1.3 µm

                   Semiconductors 33, 586 (1999)

 

700            W. Schlaak, Th. Engel, A. Umbach, W. Passenberg, A. Seeger, R. Steingrüber, C. Schramm, G.G. ekonnen. G. Unterbörsch, H.G. Bach,  D. Bimberg

                   InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38 / 60 GHz narrowband photoreceivers

                   Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 399 (1999)

 

701            O. Stier, M. Grundmann, D. Bimberg

                   Inter- and intraband transitions in strained quantum dots modeled in eight-band k•p theory

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

702            N.N. Ledentsov, D. Bimberg, V.M. Ustinov, M.V. Maximov,  Zh.I. Alferov, V.P. Kalosha, J.A. Lott

                   Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser

                   Semiconductor Science and Technology 14, 99 (1999)

 

703            N.N. Ledentsov, A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, A. Hoffmann

                   Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer super­lattices

                   Appl. Phys. Lett. 74, 161 (1999)

 

704            A.R. Kovsh, A,E, Zhukov, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maksimov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, E.Yu. Kontrat’eva, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures

                   Semiconductors 33, 929 (1999)

 

705            M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, I.N. Kaiander, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Lasing from quantum dots formed by activated alloy spinodal decomposition on InAs stressors

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 135 (1999)

 

706            B.V. Volovik, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, A.F. Tsatsul’nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner

                   Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without external optical confinement

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

707            B.V. Volovik, A.F. Tsatsul’nikov, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, A.A. Suvorova, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, P. Werner

                   Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands

                   Seminconductors 33, 901 (1999)

 

708            A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

                   Appl. Phys. Lett. 75, 1926 (1999)

 

709            O. Reimann, D. Huhse, E.H. Böttcher, D. Bimberg, H.D. Stahlmann

                   Low jitter dual semiconductor laser system using electrical phase shift for fast temporal scanning in time-resolved pump and probe experiments

                   Proc. CLEO, Pacific Rim '99 W13, 203 (1999)

 

710            A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, NN.A. Maleev, S.S. Mikhrin, Yu.M. Shernyakov,  A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   Low threshold lasing in 1.3 µm range in the structure based on InAs/InGaAs quantum dots

                   Proc. Intern. Symp. on Compound Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Berlin</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> , Th A3.3 (1999)

 

711            Strittmatter, A. Krost, M. Straßburg, V. Türck, D. Bimberg, J. Bläsing, J. Christen

                   Low-pressure metal organic chemical vapor depostion of GaN on silicon(111) substrates using an AlAs nucleation layer

                   Appl. Phys. Lett. 74, 1242 (1999)

 

712            Strittmatter, A. Krost, V. Türck, M. Straßburg, D. Bimberg, J. Bläsing, T. Hempel, J. Christen, B. Neubauer, D. Gerthsen, T. Christmann, B.K. Meyer

                   LP-MOCVD growth of GaN on silicon substrates – comparison between AlAs and ZnO nucleation layers

                   Mat. Sci. Eng. B 59, 29 (1999)

 

713            M. v. Ortenberg, H. Wißmann, L. Parthier, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg

                   Magneto condensation and probing of nanostructures by high magnetic fields

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

714            H. Born, A.R. Goni, R. Heitz,  A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg

                   Magnetoluminescence of annealed self-organized InGaAs/GaAs quantum dots

                   phys. stat. sol. (b) 215, 313 (1999)

 

715            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov,  P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner

                   Middle infrared emission from InAs quantum dots in a GaAs matrix

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)

 

716            M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann

                   Modeling of quantum dot optical properties using micro-states

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)

 

717            A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov

                   Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers

                   J. Crystal Growth 201/202, 1117 (1999)

 

718            M. Straßburg, U.W. Pohl, D. Bimberg

                   MOVPE-grown ZnMgCdSe structures on InP

                   Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 115 (1999)

 

719            V. Türck, D. Bimberg

                   Nanotechnology in optoelectronics: trends and prospects

                   mst news, intern. newsletters on microsystems, 17 (1999)

 

720            Th. Engel, G. Unterbörsch, R. Hübsch, G.G. Mekonnen, D. Bimberg

                   Noise and nonlinearity of monolithic 38 GHz photoreceiver for OPTIC/mm-wave conversion

                   Proc. European Conference on Optical Communication, ECOC’99, Nice. <st1:country-region w:st="on"><st1:place w:st="on">France</st1:place></st1:country-region>  (1999)

 

721            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner

                   Optical and structural properties of InAs quantum dots in a GaAs matrix for a sprectral range up to 1.7 µm

                   Appl. Phys. Lett. 75, 2347 (1999)

 

722            P. Yu, W. Langbein, K. Leosson, J.M. Hvam, N.N. Ledentsov, D. Bimberg, V. M. Ustinov, A.Yu. Egorov, A.E. Zhukov

                   Optical anisotropy in vertically coupled quantum dots

                   Phys. Rev. B 60, 16680 (1999)

 

723            R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, P. Werner, U. Gösele

                   Optical properties of InAs quantum dots in a Si matrix

                   Appl. Phys. Lett. 74, 1701 (1999)

 

724            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg

                   Optical properties of structures with single and multiple InGaN  insertions in a GaN matrix

                   phys. stat. sol. (b) 216, 435 (1999)

 

725            M.V. Maximov, D.A. Bedarev, A.Yu Egorov, P.S. Kop’ev, A.R. Kovsh, A.V. Lunev, Yu.G. Musikhin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   Optimization of quantum dot lasers by seeding of quantum dots

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)

 

726            L. Köhne, A. Dadgar, D. Bimberg, M. Zafar Iqbal, U.S. Qurashi, T. Grunde­mann,H. Schumann

                   Osmium related deep levels in indium phosphide

                   phys. stat. sol. (a) 171, 521 (1999)

 

727            I.L. Krestnikov, W.V. Lundin, A.V. Sakharov., V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N . Ledentsov, A. Hoffmann, D. Bimberg

                   Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature

                   phys. stat. sol. (b) 216, 511 (1999)

 

728            G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, J. Herrmann, N.N. Ledentsov, I.L. Krestnikov, Zh.I. Alferov, D. Bimberg

                   Polarization splitting of the gain band in quantum wire and quantum dot arrays

                   Phys. Rev. B59, 12275 (1999)

 

729            D. Bimberg

                   QD lasers up to and beyond 1300 nm

                   Digest of the LEOS Summer Topical Meetings, 17 (1999)

 

730            M. Grundmann, F. Heinrichsdorff, C. Ribbat, M.-H. Mao,  D. Bimberg

                   Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation

                   Appl. Phys. B 69, 413 (1999)

 

731            M. Straßburg, R. Engelhardt, R. Heitz, U.W. Pohl, S. Rodt, V. Türck, A. Hoffmann, D. Bimberg, I.L. Krestnikov, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen

                   Quantum dots formed by ultrathin CdSe-ZnSe insertions

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 13 (1999)

 

732            D. Bimberg

                   Quantum dots: paradigm changes in semiconductor physics

                   semiconductors 33, 951 (1999)

 

733            A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

abstract    Quantum-dot injection heterolaser with 3.3 W output power

                   Tech. Phys. Lett. 25, 438 (1999)

 

734            G. Sek, J. Misiewicz, K. Ryczko, M. Kubisa, F. Heinrichsdorff, O. Stier, D. Bimberg

                   Room temperature photoreflectance of MOCVD-grown InAs/GaAs quantum dots

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 110, 657 (1999)

 

735            P. Borri, W. Langbein, J. Mork, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg

                   Room-temperature dephasing in InAs/GaAs quantum dots

                   Proc. CLEO/QUELS’99, Baltimore Convention Center, Baltimore, USA, 46 (1999)

 

736            R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen

                   Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures

                   J. Appl. Phys. 86, 5578 (1999)

 

737            I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg

                   Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

                   Appl. Phys. Lett. 75, 1192 (1999)

 

738            van Gelen, J.J.M. Binsma, T. van Dongen, A. van Leerdam, A. Dadgar, D. Bimberg, O. Stenzel, H. Schumann

                   Ruthenium doped high power 1.48 µm SIPBH Laser

                   Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 203 (1999)

 

739            V.A. Shchukin, D. Bimberg

                   Self-ordering in multisheet arrays of 2D strained islands

                   Thin  Solid Films 357, 66 (1999)

 

740            A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, M.V. Maksimov, G.E. Cirlin, N.N. Ledentsov, D. Bimberg, P. Werner, Zh.I. Alferov

                   Self-organized InAs quantum dots in a silicon matrix

                   J. Cryst. Growth 201/202, 1202 (1999)

 

741            E. Martinet, M.-A. Dupertuis,  E. Kapon, O. Stier, M. Grundmann, D. Bimberg

                   Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)

 

742            M.V. Maximov, Yu.M. Shernyakov, I.N. Kaiander, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop’ev, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul'nikov, V.M. Ustionov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   Single transverse mode operation of long wavelength (~1.3 µm)InAsGaAs quantum dot laser

                   Electronics Lett. 35, 2038 (1999)

 

743            D. Bhattacharyya, E.A. Avrutin, A.C. Bryce, J.M. Gray, J.H. Marsh, D. Bimberg, F. Heinrichsdorff, V.M. Ustinov, S.V. Zaitsev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, A.I. Onishchenko, E.P. O’Reilly

                   Spectral and dynamic properties of InAs/GaAs self-organized quantum dot lasers

                   IEEE J. Quantum El. 5, 648 (1999)

 

744            V.A. Shchukin, D. Bimberg

                   Spontaneous ordering of nanostructures on crystal surfaces

                   Rev. of  Modern Physics 71, 1125 (1999)

 

745            N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg

                   Structural studies of stacked InAs quantum dots in a Silicon matrix grown by MBE

                   41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>  (1999)

 

746            N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg

                   Structure of InAs quantum dots in Si matrix investigated by high resolution electron microscopy

                   Proc. 7th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 216 (1999)

 

747            N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg

                   Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and modelling

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (1999)

 

748            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul’nikov,  Zh.I. Alferov, A. Hoffmann, D. Bimberg

                   Surface-mode lasing from optically pumped InGaN/GaN heterostructures

                   Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 124 (1999)

 

749            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg

                   Surface-mode lasing from stacked InGaN insertions in a GaN matrix

                   Appl. Phys. Lett. 74, 3921 (1999)

 

750            Umbach, Th. Engel, H.-G. Bach, S. v. Waasen, E. Dröge, A. Strittmatter, W. Ebert, W. Passenberg, R. Steingrüber, W. Schlaak, G.G. Mekonnen, D. Bimberg, G. Unterbörsch

                   Technology of InP-based 1.55 µm ultrafast OEMMICs: 40 Gbit/s broadband and 38 / 60 GHz narrow-band photoreceivers

                   IEEE J. Quantum El. 35, 1024 (1999)

 

751            R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg

                   Temperature-dependent optical properties of self-organized InAs/GaAs quantum dots

                   J. Elec. Mat. 28, 520 (1999)

 

752            H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch

                   The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy

                   phys. stat. sol. (b) 215, 865 (1999)

 

753            M. Straßburg, R. Heitz, V. Türck,  S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, L.L. Krestnikow, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen

                   Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

                   J. El. Mat. 28, 506 (1999)

 

754            P. Borri, W. Langbein, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg

                   Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

                   in: Conf. on Lasers and Electro-Optics, OSA Techn. Digest, Washington DC, USA, 321 (1999)

 

755            P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Ultrafast gain and index dynamics in InAs/InGaAs quantum dot amplifiers

                   Proc. 25th European Conference on Optical Communication, ECOC’99, Techn. Digest, 74 (1999)

 

756            I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, Rosenauer, D. Gerthsen

                   Vertical arrangement and wavefunction control in structures with 2d quantum dots

                   Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>, p. 71 (1999)

 

757            A.Krost, F.Heinrichsdorff, D.Bimberg, J.Bläsing, A.A.Darhuber, G.Bauer

                   X-ray analysis of self-organized InAs/InGaAs quantum dot structure

                   Cryst. Res. Techn. 34, 89 (1999)

758           S.S. Mikhrin, A.E. Zhukov,. A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.P. Soshnikov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov

abstract    0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

                   Semicond. Sci. Technol. 15, 1061 (2000)

 

759            N.N. Ledentsov, M.V. Maximov, D. Bimberg, T. Maka, C.M. Sotomayor Torres, I.V. Kochnev, I.L. Krestnikov, V.M. Lantratov, N.A. Cherkashin, Yu.M. Musikhin, Zh.I. Alferov

                   1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

                   Semicond. Sci. Technol. 15, 604 (2000)

 

760            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, D.A. Livshits, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   3.5 W continuous wave operation from quantum dot laser

                   Mat. Scie. Eng. B 74, 70 (2000)

 

761            M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel, S. Itoh, K. Nakano, A. Ishibashi

                   A new approach to improved green emitting II-VI laser diodes

                   Conf. Digest 17th Intern. Semiconductor Laser Conf., 25-28 Sep, p. 1053 (2000)

 

762            S.S. Mikhrin, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.N. Kayander, E.Yu. Kondrat'eva, D.A. Livshits, U.S. Tarasov, M.V. Maksimov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov

abstract     A spatially single-mode laser for a range of 1.25 < 1.28 µm on the basis of InAs quantum dots on a GaAs substrate

                   Semiconductors 34, 119 (2000)

 

763            O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg

                   Biexciton binding energy in InAs/GaAs quantum dots - a local probe for the dot geometry

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1265 (2000)

 

764            D. Bimberg, N.N. Ledentsov

                   Birth of quantum dot devices: Paradigm changes

                   Semiconductor News 9, 37 (2000)

 

765            R. Wetzler, A. Wacker, E. Schöll, C.M.A. Kapteyn, R. Heitz, D. Bimberg

                   Capacitance-voltage characteristics of self-organized InAs/GaAs quantum dots embedded in a pn structure

                   Appl. Phys. Lett. 77, 1671 (2000)

 

766            R. Wetzler, C.M.A. Kapteyn, R. Heitz, A. Wacker, E. Schöll, D. Bimberg

                   Capacitance-voltage characteristics of self-organized quantum dots embedded in a pn junction

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1093 (2000)

 

767            C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg

                   Carrier Emission Processes in InAs Quantum Dots

                   Physica E 7, 388 (2000)

 

768            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov

                   Carrier escape and level structure of InAs/GaAs quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1045 (2000)

 

769            M.V. Maximov, A.F. Tsatsul'nikov, D.S. Sizov, Yu.M. Shernyakov,  A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres

                   Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation

                   Nanotechnology 11, 309 (2000)

 

770            U.W. Pohl, Matthias Straßburg, Martin Straßburg, I.L. Krestnikov, R. Engelhardt, S. Rodt, D. Bimberg

                   CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers

                   J. Cryst. Growth 214/215, 717 (2000)

 

771            V . Türck, S. Rodt, R. Heitz, O. Stier, M. Straßburg, U.W. Pohl, D. Bimberg

                   Charged excitons and biexcitons in self-organized CdSe quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1369 (2000)

 

772            M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, D. Schikora

                   Coexistence of Planar and Three-dimensional Quantum Dots in CdSe/ZnSe Structures

                   Appl. Phys. Lett. 76, 685 (2000)

 

773            P. Borri, W. Langbein, J.M. Hvam, D. Bimberg

                   Coherent versus incoherent dynamics in InAs quantum dots: The role of elastic dephasing

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1221 (2000)

 

774            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov

                   Comparison of hole and electron emission from InAs quantum dots

                   Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 375 (2000)

 

775            A.R. Goni, A. Cantarero, H. Scheel, S. Reich, C. Thomsen, P.V. Santos, F. Heinrichsdorff, D. Bimberg

                   Different temperature renormalizations for heavy and light-hole states of monolyer-thick heterostructures

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 116, 121 (2000)

 

776            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, Zh.I. Alferov

                   Effect of annealing on phase separation in ternary III-N alloys

                   Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (2000)

 

777            L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg

abstract     Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

                   Proc. SPIE, Physics and Simulation of Optoelectronic Devices VIII 3944, 823 (2000)

 

778            V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg

                   Effect of random field fluctations on excitonic transitions of individual CdSe quantum dots

                   Phys. Rev. B 61, 9944 (2000)

 

779            A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov

                   Electrically and optically pumped mid-infrared emission from quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1157 (2000)

 

780            <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A. Hoffmann, D. Bimberg, Zh.I. Alferov

                   Electromagnetic response of 3D arrays of quantum dots

                   J. Elec. Mat. 29, 494 (2000)

 

781            M. Grundmann, O. Stier, A. Schliwa, D. Bimberg

                   Electronic structures of cleaved-edge-overgrowth strain induced quantum wires

                   Phys. Rev. B 61, 1744 (2000)

 

782            C.M.A. Kapteyn, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, G. abstractreiter

                   Fermi-filling of Ge quantum dots in Si

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1053 (2000)

 

783            I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, I.V. Kochnev,  V.M. Lantratov, N.A. Cherkashin, Yu.G. Musikhin, Zh.I. Alferov

                   Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral range grown by metal-organic chemical vapor deposition

                   Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 355 (2000)

 

784            A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, Zh.I. Alferov, B.Ya. Ber, V.V. Tret'yakov, Zh.I. Alferov, N.N. Ledentsov,  A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu.G. Musikhin, L.P. Soshnikov, D. Lit

                   Formation of GaAsN nanoinsertions in a GaN matrix

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 395 (2000)

 

785            A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut

abstract     Formation of GaAsN  nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

                   Semicond. Sci. Technol. 15, 766 (2000)

 

786            M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg

                   GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

                   J. Elec. Mat. 29, 476 (2000)

 

787            G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, .N.N. Ledentsov, . Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele

                   Heteroepitaxial growth of InAs on Si: The new Type of quantum dots

                   Mater. Phys. Mech. 1, 15 (2000)

 

788            D. Bimberg

                   High power quantum dot lasers

                   Conf. Digest of Lasers and Electro-Optics Europe 2000, 10-15 Sep, 1 (2000)

 

789            F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg

                   High power quantum dot lasers at 1100 nm

                   Appl. Phys. Lett. 76, 556 (2000)

 

790            Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg

                   High power quantum dot lasers at 1140 nm

                   17th Intern. Semiconductor Laser Conf. 2000, Conf. Digest 2000, IEEE, p. 131 (2000)

 

791            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov

                   Hole and electron emission from InAs quantum dots

                   Appl. Phys. Lett. 76, 1573 (2000)

 

792            G.E. Cirlin, V.A. Egorov, V.N. Petrov, A.O. Golubok, N.I. Komyak, N.K. Polyakov, Yu.B. Samsonenko, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. <st1:place w:st="on"><st1:city w:st="on">Bimberg</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele

                   InAs nanostructures in a silicon matrix: Growth and properties

                   Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 51 (2000)

 

793            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg

                   InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm

                   Electronics Lett. 36, 1384 (2000)

 

794            A.B. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A. Bedarev, A.F. Tsatsul'nikov, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg

                   Influence of growth interruptions and gas ambient on optical and structural properties of InGaN/GaN multilayer structures

                   Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 241 (2000)

 

795            A.S. Usikov, W.V.Lundin, D.A. Bedarev, E.E. Zavarin, A.F. Sakharov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg

                   Influence of the thick GaN buffer growth conditions on the electroluminescence properties of GaN/InGaN multilayer heterostructures

                   Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 875 (2000)

 

796            M.V. Maximov, I.L. Krestnikov, Yu.M. Shernyakov, A.E. Zhukov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres

                   InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices

                   J. Elec. Mat. 29, 487 (2000)

 

797            A. Dadgar, J. Christen, S. Richter, F. Bertram, A. Diez, J. Bläsing, A. Krost, A. Strittmatter, D. Bimberg, A. Alam, M. Heuken

                   InGaN blue light emitter grown on Si(111) using an AlAs seed layer

                   Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, 845 (2000)

 

798            D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg

                   Investigations on the formation kinetics of CdSe quantum dots

                   J. Cryst. Growth 214/215, 698 (2000)

 

799            D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg

                   Investigations on the Stranski-Krastanov growth of CdSe quantum dots

                   Appl. Phys. Lett. 76, 418 (2000)

 

800            D. Bimberg, M. Grundmann

                   Kleine Teilchen - große Wirkung

                   GEO 5, 205 (2000)

 

801            I.L. Krestnikov, A.V. Sakharov, V.W. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul'nikov, N. N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, D. Bimberg

abstract    Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

                   Semiconductors 34, 481 (2000)

 

802            I.L. Krestinikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, A. Hoffmann, D. Bimberg

                   Lasing in vertical direction in structures with InGaN quantum dots

                   phys. stat. sol. (a) 180, 91 (2000)

 

803            Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude, D. Hommel

                   Lateral-index guided ZnCdSSe-based lasers

                   J. Cryst. Growth 214/215, 1054 (2000)

 

804            <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha,  A. Hoffmann, D. Bimberg

                   Light confinement in a quantum dot

                   Semicond. Sci. Technol. 15, 1-6 (2000)

 

805            V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg

                   Line broadening and localization mechanisms in CdSe / ZnSe quantum dots

                   J. Luminescence 87-89, 337 (2000)

 

806            V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernykov, E.Yu. Kondrat'eva, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, J.A. Lott, D. Bimberg

                   Long wavelength quantum dot lasers on GaAs substrates

                   Nanotechnology 11, 397 (2000)

 

807            V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, A.F. Tsatsul'nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, P.S. Kop'ev, Zh.I. Alferov, L.E. Vorob'ev, D.A. Firsov. A.A. Suvorova, I.P. Soshnikov, P. Werner, N.N. Ledentsov, D. Bimberg

                   Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

                   Microelectronic J. 31, 1 (2000)

 

808            M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel

                   Low threshold current densities for II-VI lasers

                   Electronics Lett. 36, 878 (2000)

 

809            A.R. Goni, H. Born, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg

                   Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/Gaas quantum dots

                   Jpn. J. Appl. Phys. 39, 3907 (2000)

 

810            R. Heitz, F. Guffarth, <st1:place w:st="on">I.</st1:place> Mukhamethzahnov, M. Grundmann, A. Madhukar, D. Bimberg

                   Many-body effects on the optical spectra of InAs/GaAs quantum dots

                   Phys. Rev. B 62, 16881 (2000)

 

811            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter

                   Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy

                   Appl. Phys. Lett. 77, 4169 (2000)

 

812            V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, Y.G. Musikhin, A.F. Tsatsul'nikov, B.V. Volovik, D.A. Bedarev, M.V. Maximov, D.A. Livshits, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

                   MBE growth, structural and optical characterization of InAs/InGaAlAs self-organized quantum dots

                   Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 57 (2000)

 

813            A.F. Tsatsul'nikov, B.V. Volovik, D. A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov

  Mechanisms of InGaAlAs solid decomposition stimulated by InAs quantum dots

                   Semiconductors 34, 323 (2000)

 

814            Matthias Straßburg, Martin Straßburg, U.W. Pohl, D. Bimberg

                   Metalorganic vapor-phase epitaxy of ZnMgCdSe structures of InP

                   J. Cryst. Growth 214/215, 115 (2000)

 

815            R. Gibis, S. Schelhase, R. Steingrüber, G. Urmann, H. Künzel, S. Thiel, O. Stier, D. Bimberg

                   MOMBE selective infill growth of InP/GaInAs for quantum dot formation

                   J. Cryst. Growth 209, 499 (2000)

 

816            M. Meixner, R. Kunert, S. Bose, E. Schöll, V.A. Shchukin, D. Bimberg, E. Penev, P. Kratzer

                   <st1:place w:st="on">Monte Carlo</st1:place> simulation of the self-organised growth of quantum dots with anisotropic surface diffusion

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 381 (2000)

 

817            D. Bimberg, N.N. Ledentsov

                   Nano-Optoelectronics: From promise to realization

                   Proc. 7th Intern. Symp. on Trends and Applications of Thin Films, TATF‘2000, <st1:place w:st="on"><st1:city w:st="on">Nancy</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, March 2000, p. 120 (2000)

 

818            V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, Yu.G. Musikhin, V.B. Volovik, A. Schliwa, O. Stier, R. Heitz, D. Bimberg

                   New tools to control morphology of self-organized quantum dot nanostructures

                   Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 79 (2000)

 

819            Martin Straßburg, Th. Deniozou, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Schikora

                   Optical identification  of quantum dot types in CdSe/ZnSe structures

                   J. Cryst. Growth 214/215, 756 (2000)

 

820            N.D. Zakharov, P. Werner, U. Gösele, V.M. Ustinov, G.E. Cirlin, B.V. Volovik, N.K. Polyakov, V.N. Petrov, V.A. Egorov, N.N. Ledenstov, Zh.I. Alferov, R. Heitz, D. Bimberg

                   Optical properties and structure of Si/InAs/Si layers grown by MBE on Si substrate

                   Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 322 (2000)

 

821            R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. <st1:place w:st="on"><st1:city w:st="on">Soshnikov</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele

                   Optical properties of InAs quantum dots in a Si matrix

                   Physica E 7, 317 (2000)

 

822            B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, Yu.G. Musikhin, V.A. Odnoblyudov, N.N. Ledentsov, D. Bimberg, V.M. Ustinov

                   Optical properties of InGaAsN/GaAs quantum well and quantum dot structures for longwavelength emission

                   Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 148 (2000)

 

823            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, A. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, D. Bimberg

                   Optical properties of quantum dots formed by activated spinodal decomposition of GaAs-based lasers emitting at ~ 1.3 µm

                   Microelectronic Engineering 51-52, 61 (2000)

 

824            M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg

                   Optical Properties of Self-organized Quantum Dots: Modelling and Experiments

                   phys. stat. sol. (a) 178, 255 (2000)

 

825            O. Schulz, M. Straßburg, U.W. Pohl, D. Bimberg, A. Itoh, K. Nakano, A. Ishibashi, M. Klude, D. Homel

                   Optimised implantation-induced disordering for lowering of the threshold current density of II-VI laser diodes

                   phys. stat. sol.(a) 180, 213 (2000)

 

826            S. Rodt, V. Türck, R. Heitz, M. Straßburg, U.W. Pohl, D. Bimberg

                   Phonon-assisted energy transfer from barrier states into quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1231 (2000)

 

827            R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg

                   Phonon-assisted exciton-transitions in self-organized InAs/GaAs quantum dots

                   Physica E 7, 398 (2000)

 

828            A.E. Zhukov, A.R Kovsh, S.S. Mikhrin, N.A. Maleev, V.A. Odnoblyudov, V.M. Ustinov, Yu.M. Shernyakov, E.Yu. Kondrat'eva, D.A. Livshits, IS. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Power conversion efficiency of quantum dot laser diodes

                   Semiconductors 34, 609 (2000)

 

829            M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov

                   Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications

                   Jpn. J. Appl. Phys. 39, 2341 (2000)

 

830            F. Romstad, P. Borri, J. Moerk, J. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Pulse distortion in a quantum dot amplifier

                   Conf. on Lasers and Electro-Optics (CLEO 2000), p. 471 (2000)

 

831            D. Bimberg, N.N. Ledenstov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov

                   Quantum dot lasers

                   Proc. LEOS 2000 IEEE 13th Annual Meeting, Rio Grande, Puerto Rico, p. 302 (2000)

 

832            D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsul'nikov, P.S. Kop'ev, Zh.I. Alferov

                   Quantum Dot Lasers: Breakthrough in optoelectronics

                   Thin  Solid Films 367, 235 (2000)

 

833            N.N. Ledentsov, D. Bimberg, V.M. Ustinov, J.A. Lott, Zh.I. Alferov

                   Quantum dot lasers: The promises come to reality

                   Memoirs of The Institute of Scientific and Industrial Research, <st1:city w:st="on"><st1:place w:st="on">Osaka</st1:place></st1:city> 57, 80 (2000)

 

834            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, N.N. Ledentsov, D. Bimberg

                   Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors

                   Physica E 7, 326 (2000)

 

835            N.N. Ledentsov, I.L. Krestnikov, M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen

                   Quantum dots formed by ultrathin insertions in wide gap matrices

                   Thin  Solid Films 367, 40 (2000)

 

836            C. Meyne, U.W. Pohl, W. Richter, M. Straßburg, A. Hoffmann, V. Türck, S. Rodt, D. Bimberg, D. Gerthsen

                   Quantum island formation in CdS/ZnS heterostructures grown by MOVPE

                   J. Cryst. Growth 214/215, 722 (2000)

 

837            R. Heitz, O. Stier, I. Mukhametzhanov, A. Madhukar, D. Bimberg

                   Quantum size effect in self-organized InAs/GaAs quantum dots

                   Phys. Rev. B 62, 11017 (2000)

 

838            N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov

                   Quantum-Dot Heterostructure Lasers

                   IEEE, J. of Selected Topics in Quant. Electr. 6, 439 (2000)

 

839            D. Bimberg, N.N. Ledentsov

                   Quantum-Dot Lasers: From promise to reality

                   Proc. SPIE’s Intern. Symp. Optoelectronics 2000 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 790 (2000)

 

840            M. Straßburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, D. Schikora

                   Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanow mode

                   phys. stat. sol. (a) 180, 281 (2000)

 

841            R. Heitz, H. Born, A. Hoffmann, D. Bimberg, I. Mukhametzhanov, A. Madhukar,

                   Resonant Raman scattering in self-organized InAs/GaAs quantum dots

                   Appl. Phys. Lett. 77, 3746 (2000)

 

842            R. Heitz, H. Born, T. Lüttgert, A. Hoffmann, D. Bimberg

                   Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots

                   phys. stat. sol. (b) 221, 65 (2000)

 

843            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg

                   Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm

                   Proc. LEOS 2000 IEEE 13th Annual Meeting, <st1:city w:st="on">Rio Grande</st1:city>, <st1:place w:st="on">Puerto Rico</st1:place> , p. 304 (2000)

 

844            P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Room-temperature dephasing in InAs quantum dots

                   phys. stat. sol. (a) 178, 337 (2000)

 

845            D. Bimberg, F. Heinrichsdorff, N.N. Ledentsov, V.A. Shchukin

                   Self-organized growth of semiconductor nanostructures for novel light emitters

                   Appl. Surf. Sci. 159-160, 1 (2000)

 

846            E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol,  E. Kapon, O. Stier, M. Grundmann, D. Bimberg

                   Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires

                   Phys. Rev. B 61, 4488 (2000)

 

847            R. Heitz, H. Born, A. Hoffmann, F. Guffarth, D. Bimberg

                   Shape-dependent phonon bottleneck in InGaAs/GaAs quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1167 (2000)

 

848            P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Spectral hole-burning and carrier-heating dynamics in quantum dot amplifiers

                   IEEE, J. of Selected Topics in Quant. Electr. 6, 544 (2000)

 

849            V.A. Shchukin, N.N. Ledentsov, D. Bimberg

                   Spontaneous formation of arrays of strained islands: Thermodynamics versus kinetics

                   Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 23 (2000)

 

850            N.A. Maleev,  A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, D.A. Bedarev, B.V. Volovik, I.L. Krestnikov, I.N. Kayander, V.A. Odnoblyudov, A.A. Suvorova, A.F. Tsatsul'nikov, Yu.M. Shernyakov, N.N. Ledentsov, PlS. Kop'ev, Zh.I. Alferov, D. Bimberg

abstract     Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range

                   Semiconductors 34, 594 (2000)

 

851            A. Strittmatter, D. Bimberg,  A. Krost, J. Bläsing, P. Veit

                   Structural investigation  of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer

                   J. Cryst. Growth 221, 293 (2000)

 

852            N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov, V.N. Petrov, V.A.Egorov, G.E. Cirlin

                   Structure and optical properties of Si/InAs/Si layers grown by mbe on Si substrate at different temperatures

                   Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 249 (2000)

 

853            N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov

                   Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate

                   Appl. Phys. Lett. 76, 2677 (2000)

 

854            R. Sellin, F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg

                   Surface flattering during MOCVD of thin GaAs layers covering InGaAs quantum dots

                   J. Cryst. Growth 221, 581 (2000)

 

855            L. Müller-Kirsch, U.W. Pohl, R. Heitz, H. Kirmse, W. Neumann, D. Bimberg

                   Thin GaSb insertions and quantum dot formation in GaAs by MOCVD

                   J. Cryst. Growth 221, 611 (2000)

 

856            P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection

                   Appl. Phys. Lett. 76, 1380 (2000)

 

857            M. Straßburg, V. Kutzer, M. Dworzak, A. Hoffmann, R. Heitz, D. Bimberg, I. Kudryashov, K. Lischka, D. Schikora

                   Time-resolved studies and high-excitation properties of CdSe/ZnSe quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1323 (2000)

 

858            I.L. Krestnikov, H. Born, T. Lüttgert, R. Heitz,  A.F. Tsatsul'nikov, B.V. Volovik, M.V. Maximov, Yu.G. Musikhin, A.R. Kovsh, N.A. Maleev, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov, A. Hoffmann, Zh.I. Alferov, D. Bimberg

                   Time-resolved studies of large In GaAs/GaAs quantum dots

                   Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1241 (2000)

 

859            M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyskov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, R. Heitz, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Yu.G. Musikhin, W. Neumann

                   Tuning quantum dot properties by activated phase separation  of an InGa(Al)As alloy grown on InAs stressors

                   Phys. Rev. B 62, 16671 (2000)

 

860            P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg

                   Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers

                   IEEE Photonics Techn. Lett. 12, 594 (2000)

 

861            Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi

                   Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering

                   Electronics Lett. 36, 44 (2000)

 

862            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg

                   Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrages emitting at 1.3 µm

                   Conf. Digest of 17th Intern. Conf. of Semiconductor Laser Conf., 25-28 Sep, 13 (2000)

 

863            A.F. Tsatsul'nikov, A.R. Kovsh, A.E. Zhukov, Yu.M. Shernyakov, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, A.M. Mintairov, J.L. Merz, N.N. Ledentsov, D. Bimberg

                   Volmer-Weber and Stranski-Krastanov InAs-(<st1:place w:st="on"><st1:city w:st="on">Al</st1:city>,<st1:state w:st="on">Ga</st1:state></st1:place>)As quantum dots emitting at 1.3 µm

                   J. Appl. Phys. 88, 6272 (2000)

 

864            Matthias Straßburg, Martin Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, D. Litvinov, D. Gerthsen, M. Schmidtbauer, P. Schäfer

                   ZnMgCdSe structures on InP grown by MOVPE

                   J. Christ. Growth 221, 416 (2000)