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TU Berlin

Inhalt des Dokuments

1995 - 1997

342            R. Heitz, L. Podlowski, J. Böhrer, A. Hoffmann, I. Broser, D. Bimberg

                   Calorimetric Absorption spectroscopy of deep defects and quantum dots

                   Acta Physica Polonica 88, 619 (1995)

 

343            M. Grundmann, N.N. Ledentsov, D. Bimberg, S.S. Ruvimov, U. Richter, J. Heydenreich, V.M. Ustinov, P.S. Kop‘ev, Zh.J. Alferov

                   d-function like density of states in self-assembled quantum dots

                   Phantoms Newsl. 8, 3 (1995)

 

344            H. Scheffler, N. Baber, A. Dadgar, D. Bimberg, J. Winterfeld, H. Schumann

                   Deep levels in Hafnium- and Zirconium-doped Indium phosphide

                   Phys. Rev. B 51, 14142 (1995)

 

345            A. Krost, R.F. Schnabel, F. Heinrichsdorff, U. Rossow, D. Bimberg, A. Cerva

                   Defect reduction in GaAs and InP grown on planar Si(111) and on patterned Si(001) substrates

                   J. Cryst. Growth 145, 314 (1995)

 

346            M. Kuttler, D. Bimberg

                   Disordering of CdZnSe/ZnSe strained layer superlattices by ion implantation

                   Jpn. J. Appl. Phys. 34, 1159 (1995)

 

347            D. Huhse, M. Schell, W. Utz, J. Kaessner, D. Bimberg

                   Dynamics of single-mode formation in self-seeded Fabry Perot laser diodes

                   IEEE Photonics Technol. Lett 7, 351 (1995)

 

348            V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg

                   Electron quantum wires in type II single heterostructures on nonplanar substrates

                   Appl. Phys. Lett 67, 1712 (1995)

 

349            M. Grundmann, E. Kapon, J. Christen, D. Bimberg

                   Electronic and optical properties of quasi-one-dimensional carriers in quantum wires

                   J. of Nonlinear Optical Phys. and Mat. 4, 99 (1995)

 

350            M. Herrscher, M. Grundmann, E. Dröge, S. Kollakowski, E.H. Böttcher, D. Bimberg

                   Epitaxial lift-off InGaAs/InP MSM photodetectors on Si

                   Electron. Lett. 31, 1383 (1995)

 

351            H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H.K. Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg

                   Formation and characterization of AlGaAs Quantum Wires on Vicinal (110) surfaces

                   Jap. J. Appl. Phys. S-VI-6, 785 (1995)

 

352            H. Nakashima, M. Takeuchi, K. Sato, K. Shiba, H.K. Huang, K. Maehashi, K. InouJ. Christen, M. Grundmann, D. Bimberg

                   Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3  toward (111) A by molecular beam epitaxy

                   Mat. Sci. Engineering B 35, 295 (1995)

 

353            M. Zacharias, J. Bläsing, J. Christen, P. Veit, B. Dietrich, D. Bimberg

                   Formation of Ge nanocrystals with sharp size distribution: Structural and optical characterization

                   J. Superl. Microstr 18, 139 (1995)

 

354            J. Yu, M. Schell, M. Schulze, D. Bimberg

                   Fourier-limited 1.6-ps pulses with variable repetition rate from 1 to 26 Ghz by passive mode-locking of a semiconductor laser in an external cavity

                   Photonics Technol. Lett. 7, 467 (1995)

 

355            J. Yu, D. Huhse, M. Schell, M. Schulze, D. Bimberg, J.A.R. Williams, L Zhang, I. Bennion

                   Fourier-transform-limited 2.5 ps light pulses with electrically tunable wavelength (15 nm) by hybridly modelocking a semiconductor laser in a chirped Bragg grating fibre external cavity

                   Elec. Lett. 31, 2008 (1995)

 

356            J. Yu, M. Schell, D. Bimberg

                   Generation of single mode picosecond light pulses with tuneable wavelength (48 nm) and repetition rate (0.6 to 5.1 Ghz) by a self-injected self-pulsing Fabry Perot laser diode (1.5 mm)

                   Proc. 21st ECOC’95, <st1:place w:st="on"><st1:city w:st="on">Brussels</st1:city>, <st1:country-region w:st="on">Belgium</st1:country-region></st1:place>, p. 737 (1995)

 

357            M. Schell, J.Yu, M. Schulze, D. Bimberg

                   High (1 to 42 Ghz) repetition rate, wavelength tuneable (50 nm) short (1.1 ps) light pulse generation with a laser diode

                   Proc. Intern. Workshop on Femtosecond Technologies, <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place> (1995)

 

358            R.F. Schnabel, M. Grundmann, R. Engelhardt, J. Oertel, A. Krost, D. Bimberg, R. Opitz, M. Schmidbauer, R. Köhler, H. Cerva

                   High quantum efficiency InP-mesas grown by hybrid epitaxy on Si substrates

                   J. Cryst. Growth 156, 337 (1995)

 

359            A. Krost, J. Böhrer, A. Dadgar, R.F. Schnabel, D. Bimberg, S. Hansmann, H. Burkhard

                   High-resolution X-ray analysis of compressively strained 1.55 mm

GaInAs/AlGaInAs multi-quantum well structures near the critical thickness

                   Appl. Phys. Lett. 67, 3325 (1995) 67, 3325 (1995)

 

360            M. Grundmann, O. Stier, D. Bimberg

                   InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons and electronic structure

                   Phys. Rev. B 52, 11969 (1995)

 

361            M. Grundmann, N.N. Ledentsov, J. Christen, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A. Yu. Egorov, A.E. Zhukov, P.S. Kop‘ev, Zh.I. Alferov

                   InAs/GaAs quantum dots: Radiative recombination from zero-dimensional states

                   Phys. Stat. Sol. (b) 188, 249 (1995)

 

362            D. Kuhl, E.H. Böttcher, F. Hieronymi, E. Dröge, D. Bimberg

                   Inductive bandwidth enhancement of sub-µm InAlAs/InGaAs MSM photodetectors

                   Photonics Technol. Lett. 7, 421 (1995)

 

363            A. Cerva, A. Krost, D. Bimberg

                   Interface defect structure of metalorganic chemically vapour deposited InP and GaAs on Si(111)

                   Phil. Mag. A 71, 1145 (1995)

 

364            M. Schell, D. Huhse, W. Utz, D. Bimberg, J. Kaessner, I.S. Tarasov

                   Jitter and dynamics of self-seeded Fabry-Perot laser diodes

                   IEEE J. of Selected Topics in Quantum Electronics 1, p. 528 (1995)

 

365            R.F. Schnabel, A. Krost, M. Grundmann, D. Bimberg, H. Cerva

                   Maskless selective area growth of antiphase domain free InP on patterned Si(001)

                   J. Electron. Mat. 24, 1625 (1995)

 

366            E.H. Böttcher, D. Bimberg

                   Millimeter wave distributed MSM photodetectors

                   Appl. Phys. Lett. 66, 3648 (1995)

 

367            F. Heinrichsdorff, A. Krost, M. Grundmann, J. Böhrer, R. Heitz, D. Bimberg, A. Darhuber, G. Bauer, M. Wassermeier, S.S. Ruvimov

                   MOCVD grown InGaAs/GaAs quantum dots

                   Proc. 6th European Workshop on MOVPE, <st1:place w:st="on"><st1:city w:st="on">Gent</st1:city>, <st1:country-region w:st="on">Belgium</st1:country-region></st1:place> (1995)

 

368            D. Bimberg, A. Dadgar, R. Heitz, A. Knecht, A. Krost, M. Kuttler, H. Scheffler, A. Näser, B. Srocka, T. Wolf, T. Zinke, S.Y. Hyeon, S. Wernik, H. Schumann

                   Novel ways to grow thermally stable semiinsulating InP-based layers

                   J. Cryst. Growth 145, 455 (1995)

 

369            J. Böhrer, N.N. Ledentsov, F. Heinrichsdorff, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassievich, N.A. Faleev, P.S. Kop’ev, Zh.I. Alferov

                   Optical investigations of the staggered band lineup GaSb/GaAs by calorimetric absorption spectroscopy and photoluminescence

                   Proc. OPTDIM’95, <st1:place w:st="on"><st1:city w:st="on">Kiew</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 6 (1995)

 

370            N.N. Ledentsov, M.V. Maximov, P.S. Kop’ev, V.M. Ustinov, M.V. Belousov, A.Lunev, B.Ya. Meltser, S.V. Ivanov, V.A. Shchukin, Zh.I. Alferov, S.S. Ruvimov, P.D. Wang, C.M. Sotomayor Torres, M. Grundmann, D. Bimberg

                   Optical spectroscopy of self-organized nanoscale heterostructures involving high-indexsurfaces

                   Microelectr. J. 26, 871 (1995)

 

371            G.E. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, P.S. Kop‘ev, D. Bimberg

                   Ordering phenomena in InAs strained layer morphological transformations on GaAs(100) surface

                   Appl. Phys. Lett 67, 97 (1995)

 

372            P. Ambrée, K. Wandel, E.H. Böttcher, D. Bimberg

                   Plasma enhanced chemical vapor deposited SiO2 layers for passivation of InGaAs:Fe metal-semiconductor-metal photodetectors

                   J. Appl. Phys 77, 1 (1995)

 

373            J. Cerne, A.G. Marhelz, M.S. Sherwin, S.-J. Allen, M. Sundaraman, A.C. Gossard, P.G. van Son, D. Bimberg

                   Quenching of excitonic quantum-well photoluminescence by intense farinfrared radiation: Free carrier heating

                   Phys. Rev. B 51, 5253 (1995)

 

374            F. Hatami, N.N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, D. Bimberg, M. Beer, S.V. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S.V. Ivanov, B.Ya. Meltser, P.S. Kop’ev, Zh.I. Alferov

                   Radiative recombination in Type II GaSb/GaAs quantum dots

                   Appl. Phys. Lett. 67, 656 (1995)

 

375            N.N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I.N. Yassi, N.A. Faler, P.S. Kop’ev, Zh.I. Alferov

                   Radiative states in type II GaSb/GaAs quantum wells

                   Phys. Rev B 52, 14058 (1995)

 

376            A. Dadgar, N. Baber, D. Ammerlahn, A. Näser, M. Kuttler, R. Heitz, D. Bimberg, J.Y. Hyeon, H. Schumann

                   Rh doping of InP

                   Proc. 6th European Workshop on MOVPE, <st1:place w:st="on"><st1:city w:st="on">Gent</st1:city>, <st1:country-region w:st="on">Belgium</st1:country-region></st1:place> (1995)

 

377            D. Bimberg, M. Grundmann, N.N. Ledentsov, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov

                   Self-Organzisation processes in MBE grown quantum dot structures

                   Thin Solid Films 267, 32 (1995)

 

378            D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer

                   Semiconductor quantum dots: the InAs/GaAs case

                   Proc. Intern. Symp. Nanostructures, <st1:city w:st="on"><st1:place w:st="on">St. Petersburg</st1:place></st1:city>, p. 167 (1995)

 

379            V.A. Shchukin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg

                   Spontaneous ordering of arrays of coherent strained islands

                   Phys. Rev. Lett. 75, 2968 (1995)

 

380            N. Kirstaedter, O. Schmidt, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, A.O. Kosogov, U. Gösele, H. Heydenreich

                   Static and dynamic properties of (InGa)As/GaAs quantum dot lasers

                   Proc. of the 8th Annual Meeting of IEEE, Electro Optics Society, 1, 290 San Francisco, <st1:country-region w:st="on"><st1:place w:st="on">USA</st1:place></st1:country-region> (1995)

 

381            G.M. Guryanov, G.E. Cirlin, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev, V.B. Gubanov, Yu.B. Samsonenko, E.P. Musikhina, V.M. Maximov, N.N.Ledentsov, D. Bimberg

                   STM and PL characterization of InAs nanostructures on singular and vicinal GaAs (100) obtained by submonolayer epitaxies

                   Proc. Intern. Symp. Nanostructures, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 405 (1995)

 

382            Y.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, P.S. Kop’ev, M. Grundmann, D. Bimberg

                   Stress-induced formation of ordered nanostructures on crystal surfaces

                   Phys. Low-Dim. Struc. 12, 43 (1995)

 

383            S. Ruvimov, P. Werner, K. Scheerschmidt, J. Heydenreich, U. Richter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A. Yu. Egorov, P.S. Kop‘ev, Zh.I. Alferov

                   Structural characterisation of (InGa)As quantum dots in the (001) GaAs matrix

                   Phys. Rev. B 51, 14766 (1995)

 

384            A. Umbach, E. Dröge, H. Engel, E.H. Böttcher, D. Bimberg, G. Unterbörsch, R. Steingruber

                   Submicron InGaAs/InP MSM photodetectors for operation at 1.55 µm

                   Proc. 21st ECOC’95, <st1:place w:st="on"><st1:city w:st="on">Brussels</st1:city>, <st1:country-region w:st="on">Belgium</st1:country-region></st1:place>, p. 677 (1995)

 

385            J. Yu, D. Bimberg

                   Suppression of self-pulsation for tens of Ghz optical pulses from passively mode-locked semiconductor lasers

                   Appl. Phys. Lett. 67, 3245 (1995)

 

386            S. Ruvimov, P. Werner, K. Scheerschmidt, U. Richter, J. Heydenreich, U. Gösele, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov

                   TEM/HREM characterization of self-organized (In,Ga)As quantum dots

                   Intern. Phys. Conf. Ser. 146, 31 (1995)

 

387            V.A. Shchukin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg

                   Theory of spontaneous ordering of arrays of coherent strained islands

                   Proc. Intern. Symp. Nanostructures, <st1:city w:st="on"><st1:place w:st="on">St. Petersburg</st1:place></st1:city>, p. 392 (1995)

 

388            A. Näser, A. Dadgar, M. Kuttler, R. Heitz, D. Bimberg, J.Y. Hyeon, H. Schumann

                   Thermal stability of the Mid-Gap acceptor Rh in InP

                   Appl. Phys. Lett. 67, 479 (1995)

 

389            V.A. Shchukin, A.J. Borovkov, N.N. Ledentsov, D. Bimberg

                   Tuning and breakdown of faceting under externally applied stress

                   Phys. Rev. B 51, 10104 (1995)

 

390            M. Grundmann, N.N. Ledentsov, J. Böhrer, J. Christen, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev, Zh.J. Alferov

                   Ultranarrow luminescence lines from single quantum dots

                   Phys. Rev. Lett. 74, 4043 (1995)

 

391            M. Schell, J.Yu, M. Schulze, D. Bimberg, M. Tsuchiya, T. Kamiya

                   Widely tunable generation of bandwidth-limited short light pulses by passive mode-locking

                   Proc. of CLEO, Pacific Rim, <st1:place w:st="on"><st1:city w:st="on">Chiba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 237 (1995)

 

392            A. Dadgar, M. Kuttler, M. Straßburg, R. Heitz, D. Bimberg, J.Y. Hyeon, T. Grundemann, H. Schumann

                   1016 cm-3 electrically active and thermally stable deep Rh acceptors in InP

                   Proc. 8th IPRM, p. 304 (1996)

 

393            Zh.I. Alferov, N.Yu. Gordeev, S.V. Zaitsev, P.S. Kop'ev, I.V. Kochnev, V.V. Komin, I.L. Krestinikov, N.N. Ledentsov, A.V. Lunev, M.V. Maksimov, S.S. Ruvimov, A.V. Sakharov, A.F. Tsatsul'nikov, Yu.M. Shernyakov, D. Bimberg

                   A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds

                   Semiconductors 30, 197 (1996)

 

394            Zh.I. Alferov, N.A. Bert, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, A.O. Kosogov, I.L. Krestnikov, N.N. Ledentsov, A.V. Lunev, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, A.F. Tsapul'nikov, Yu.M. Shernyakov, D. Bimberg

                   An injection heterojunction laser based on arrays of vertically coupled quantum dots in a GaAs matrix

                   Semiconductors 30, 194 (1996)

 

395            G.M. Guryanov, G.E. Cirlin, A.O. Golubok, S.Ya, Tipissev, N.N. Ledentsov, V.A. Shchukin, M. Grundmann, D. Bimberg, Zh.I. Alferov

                   An Intermediate (1.0 - 1.5 monolayer) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

                   Surf. Sci. 352, 646 (1996)

 

396            D. Bimberg, J. Christen, W. Wittke, D. Gerthsen, D. Stenkamp, D.E. Mars, J.N. Miller

                   Atomically abrupt interfaces of compound semiconductor heterostructures: The AlAs/GaAs case

                   Surface Science, R.J. MacDonald, E.C. Taglauer, K.R. Wandelt, eds., Springer Verlag, Heidelberg, p. 263 (1996)

 

397            N.N. Ledentsov, N. Kirstaedter, D. Bimberg

                   Comments on:"Lasing at three-dimensionally quantum-confined sublevel of self-organized In0.5Ga0.5As quantum dots by current injection" by H. Shoji, K. Mukai, T. Ohtsuka, M. Sugawara, T. Uchida and H. Ishikawa

                   Photonics Technol. Lett. 8, 1276 (1996)

 

398            A. Dadgar, D. Ammerlahn, A. Näser, R. Heitz, M. Kuttler, D. Bimberg, N. Baber, J.Y. Hyeon, H. Schumann

                   Deep-level transient-spectroscopy study of rhodium in indium phosphide

                   Phys. Rev. B 53, 7190 (1996)

 

399            M. Kuttler, M. Grundmann, R. Heitz, U.W. Pohl, D. Bimberg, H. Stenzel, B. Hahn, W. Gebhardt

                   Diffusion induced disordering (DID) in ZnSSe/ZnSe superlattices

                   J. Cryst. Growth 159, 514 (1996)

 

400            I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.V. Sorokin, S.A. Permogorov, A.N. Reznitsky, A.V. Kornievsky, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, C.M. Sotomayor Torres, D. Bimberg

                   Direct evidence of ground state exciton lasing in submonolayer CdSe-(Zn,Mg)(S,Se) structures

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 3187 (1996)

 

401            N.N.Ledentsov, V.A.Shchukin, M.Grundmann, N.Kirstaedter, J.Böhrer, O.Schmidt, D.Bimberg, V.M.Ustinov, A.Yu.Egorov, A.E.Zhukov, P.S.Kop’ev, Zh.I.Alferov, A.O.Kosogov, S.S.Ruvimov, U.Gösele, J.Heydenreich

                   Direct formation of vertically coupled quantum dots in Stranski-Krastanov growth

                   Phys. Rev. B 54, 8743 (1996)

 

402            J. Christen, F. Bertram, M. Dilger, R.J. Haug, K. Eberl, K. v. Klitzing, D. Bimberg

                   Direct imaging of the lateral confinement potential in a self assembled single electron transistor

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 3315 (1996)

 

403            G.E. Cirlin, N-P. Korneeva, V.N. Demidov, V.N. Petrov, N.K. Polyakov, V.G. Dubrovskii, G.M. Guryanov, N.N. Ledentsov, D. Bimberg

                   Dynamics of 2D-3D transition during InAs on GaAs heteroepitaxial growth: RHEED study

                   Inst. Phys. Conf. Ser. No 155, Chapter 11, p. 821 (1996)

 

404            O. Stier, M. Grundmann, D. Bimberg

                   Eight-band k•p analysis of pseudomorphic quantum wires: The InGaAs/AlGaAs case

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 1177 (1996)

 

405            M. Grundmann, R. Heitz, N.N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich

                   Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

                   J. Superlatt. Microstr. 19, 81 (1996)

 

406            R. Heitz, A. Kalburge, Q. Xie, M. Veit, M. Grundmann, D. Bimberg, P. Chen, A. Madhukar

                   Energy relaxation in InAs/GaAs quantum dots

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 1425 (1996)

 

407            X. Yang, L.J. Brillson, A.D. Raisanen, L. Vanzetti, A. Bonanni, A. Fraciosi, M. Grundmann, D. Bimberg

                   Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces

                   J. Vac. Sci. Technol. B14, 2961 (1996)

 

408            M. Grundmann, N.N. Ledentsov, O. Stier, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov

                   Excited states in self-organized InAs/GaAs quantum dots: theory and experiment

                   Appl. Phys. Lett. 68, 979 (1996)

 

409            R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov

                   Exciton-relaxation in self-organized InAs/GaAs quantum dots

                   Surf. Sci. 361/362, 770 (1996)

 

410            V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, M.A. Odnobludov, N .N. Ledentsov, A.F. Tsatsul'nikov, M.V. Maximov, S.V. Zaitsev, N.Yu. Gordeev, Yu.M. Shernyakov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Extremely low threshold AlGaAs/InGaAs quantum dot injection laser

                   Inst. Phys. Conf. Ser. No 155, Chapter 7, p. 557 (1996)

 

411            D. Huhse, M. Schell, D. Bimberg, J.A.R. Williams, L. Zhang, J. Bennion

                   Fast wavelength switching of semiconductor laser pulses by self-seeding

                   Appl. Phys. Lett. 69, 2018 (1996)

 

412            A. Dadgar, L. Köhne, M. Zafar Iqbal, D. Bimberg

                   Field enhanced carrier emission of Rh, Ru and Os induced deep levels in InP

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 2837 (1996)

 

413            N.N. Ledentsov, J. Böhrer, D. Bimberg, I.V. Kochnev, V.M. Maximov, P.S. Kop’ev, Zh.I. Alferov, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele

                   Formation of coherent superdots using metal-organic chemical vapour deposition

                   Appl. Phys. Lett. 69, 1095 (1996)

 

414            A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, N.N. Ledentsov, M.V. Maksimov, V.M. Ustinov, A.F. Tsatsul'nikov, N.A. Bert, A.O. Kosogov, Zh.I. Alferov,  D. Bimberg

abstract     Formation of vertically alligned arrays of strained InAs quantum dots in a GaAs(100) matrix

                   Semiconductors 30, 879 (1996)

 

415            N. Kirstaedter, O.G. Schmidt, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov

                   Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

                   Appl. Phys. Lett. 69, 1226 (1996)

 

416            N.N. Ledentsov, I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.L. Sorokin, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg, C.M. Sotomayor Torres

                   Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

                   Appl. Phys. Lett. 69, 343 (1996)

 

417            I.V. Kochnev, N.N. Ledentsov, V.M. Maximov, A.F. Tsatsul'nikov, A.V. Sakharov, B.V. Volovik, P.S. Kop'ev, Zh.I. Alferov, J. Böhrer, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele

                   Growth and characterization of coherent quantum dots formed by single- and multi-cycle InGaAs-GaAs metal-organic chemical vapour deposition

                   Inst. Phys. Conf. Ser No 155, Chapter 11, p. 837 (1996)

 

418            M. Grundmann, N.N. Ledentsov, R. Heitz, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele

                   Growth, characterization, theory and lasing of vertically stacked quantum dots

                   Proc. 8th IPRM, p. 738 (1996)

 

419            A.A. Darhuber, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, D. Bimberg

                   High resolution X-ray diffraction from self-organized InGaAs/GaAs quantum dot structures

                   9th Winterschool on New Developments in <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Physics, Mauterndorf  (1996)

 

420            A. Strittmatter, St. Kollakowski, E. Dröge, E.H. Böttcher, D. Bimberg

                   High speed, high efficiency resonant-cavity-enhanced InGaAs MSM photode­tectors

                   Elect. Lett. 32, 1231 (1996)

 

421            A. Strittmatter, St. Kollakowski, E. Dröge, E.H. Böttcher, D. Bimberg

                   High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photo­detectors

                   Proc. ECOC 96, <st1:place w:st="on"><st1:city w:st="on">Oslo</st1:city>, <st1:country-region w:st="on">Norway</st1:country-region></st1:place>, O1, p. 1145 (1996)

 

422            A. Krost, F. Heinrichsdorff, A. Darhuber, G. Bauer, D. Bimberg

                   High-resolution X-ray diffraction of self-organized InGaAs/GaAs quantum dot structures

                   Appl. Phys. Lett. 68, 785 (1996)

 

423            A.F. Tsatsul'nikov, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, S.S. Ruvimov, V.M. Ustinov, V.V. Komin, I.V. Kochnev, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Identification of radiative recombination channels in quantum dot structures

                   Semiconductors 30, 939 (1996)

 

424            L. Parthier, R. Ogaschewski, M. v. Ortenberg, V. Rossin, F. Henneberger, M. Grundmann, D. Bimberg

                   In-situ growth and characterization of ZnSe quantum wires on patterned GaAs

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 1149 (1996)

 

425            D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao., V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich

                   InAs-GaAs quantum dots: From growth to lasers

                   phys. stat. sol. (b) 194, 159 (1996)

 

426            D. Bimberg, N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O.G. Schmidt, M.H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov, U. Gösele, J. Heydenreich

                   InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties

                   Jpn. J. Appl. Phys. 35, 1311 (1996)

 

427            O.G. Schmidt, N. Kirstaedter, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov

                   InAs/GaAs quantum dot lasers

                   Proc. 8th IPRM, p. 727 (1996)

 

428            M. Grundmann, N.N. Ledentsov, R. Heitz, O. Stier, N. Kirstaedter, D. Bimberg, S. Ruvimov, A.O. Kosogov, P. Werner, J. Heydenreich, U. Gösele, V.M. Ustinov, M. Maximov, A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov

                   InAs/GaAs quantum dots: Single sheets, stacked dots and vertically coupled dots

                   Proc. 3rd Intern. Symp. on Quantum Confinement, (<st1:place w:st="on"><st1:city w:st="on">Chicago</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>)

The Electrochemical Society PV 75-17, p. 80 (1996)

 

429            D. Ammerlahn, R. Heitz, D. Bimberg, D. Côte, B. Clerjaud, W. Ulrici

                   Infrared investigation of neutral cobalt in GaP

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 2825 (1996)

 

430            M. Kappelt, M. Grundmann, A. Krost, V. Türck, D. Bimberg

                   InGaAs quantum wires grown by low pressure metal-organic chemical vapor deposition on InP V-grooves

                   Appl. Phys. Lett. 68, 3596 (1996)

 

431            M.V. Maximov, I.V. Kochnev, Yu.M. Sherniakov, S.V. Zaitsev, N.Yu. Gordeev, A.F. Tsatsul'nikov, A.V. Sakharov, I.L. Krestnikov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele, D. Bimberg

                   InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition

                   Inst. Phys. Conf. Ser. No 155, Chapter 11, p. 809 (1996)

 

432            M. Kappelt, V. Türck, M. Grundmann, H. Cerva, D. Bimberg

                   InP/InAlAs/InGaAs-quantum wires

                   Proc. 8th IPRM, p. 757 (1996)

 

433            J. Böhrer, A. Krost, R. Heitz, F. Heinrichsdorff, L. Eckey, H. Cerva, D. Bimberg

                   Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition

                   Appl. Phys. Lett. 68, 1072 (1996)

 

434            F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, P. Werner, F. Bertram, J. Christen

                   Kinetically and thermodynamically induced self organisation effects in the growth of quantum dots by MOCVD

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 1321 (1996)

 

435            M. Kuttler, M. Straßburg, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, E. Kurtz, G. Landwehr

                   Laterally structured ZnCdSe/ZnSe superlattices by diffusion induced disordering

                   Appl. Phys. Lett. 69, 2647 (1996)

 

436            J. Christen, M. Grundmann, D. Bimberg

                   Luminescence microscopy of selforganized semiconductor nanostructures: Light emission from single quantum wires and single quantum dots

                   Proc. 3rd Workshop on Optical Properties of Mesoscopic Semiconductor Systems, <st1:state w:st="on"><st1:place w:st="on">Utah</st1:place></st1:state> (Snowbird) (1996)

 

437            E.H. Böttcher, H. Pfitzenmaier, E. Dröge, D. Bimberg

                   Millimetre wave coplanar waveguide slow wave transmission lines on InP

                   Electr. Lett. 32, 1377 (1996)

 

438            R. Heitz, M. Grundmann, N.N. Ledentsov, L. Eckey, M. Veit, D. Bimberg

                   Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots

                   Appl. Phys. Lett. 68, 361 (1996)

 

439            M. Grundmann, N.N. Ledentsov, O. Stier, J. Böhrer, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov

                   Nature of optical transitions in self-organized InAs/GaAs quantum dots

                   Phys. Rev. B 53, 10509 (1996)

 

440            E. Kurtz, J. Nürnberger, B. Jobst, H. Baumann, M. Kuttler, S. Einfeldt, D. Hommel, G. Landwehr, K. Bethge, D. Bimberg

                   Novel results on compensation processes in ZnSe:N

                   J. Cryst. Growth 159, 289 (1996)

 

441            M. Schell, D. Bimberg, T. Kamiya

                   On the locking range of hybridly mode-locked semiconductor lasers

                   IEEE Phot. Tech. Lett. 8, 1004 (1996)

 

442            A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, N.N. Ledentsov, M.V. Maksimov, V.M. Ustinov, A.F. Tsatsul'nikov, Zh.I. Alferov, D.L. Fedorov, D. Bimberg

                   Optical emission range of structures with strained InAs quantum dots in GaAs

                   Semiconductors 30, 707 (1996)

 

443            N.N. Ledentsov, V.M. Ustinov, S.V. Ivanov, B.Ya. Meltser, M.V. Maximov, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov

                   Ordered arrays of quantum dots in semiconductor matrices

                   Uspekhi Fizicheskih Nauk 166, 423 (1996)

 

444            N.N.Ledentsov, M.Grundmann, N.Kirstaedter, O.Schmidt, R.Heitz, J.Böhrer, D.Bimberg, V.M.Ustinov, V.A.Shchukin, A.Yu Egorov, A.E.Zhukov, S.Zaitsev, P.S.Kop'ev, Zh.I.Alferov, S.S.Ruvimov, A.O.Kosogov, P.Werner, U.Richter, U.Gösele, J.Heydenreich

                   Ordered arrays of quantum dots: formation, electronic spectra, relaxation phenomena Lasing

                   Solid-State Electronics 40, 785 (1996)

 

445            O.G. Schmidt, N . Kirstaedter, M.-H. Mao, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov

                   Overcoming gain saturation in InAs/GaAs quantum dot lasers

                   Proc. LEOS'96 1, 324 (1996)

 

446            H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H.K. Huang, K. Inoue, J. Christen, M. Grundmann, D. Bimberg

                   Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Electronics 40, 319 (1996)

 

447            A.F. Tsatsul'nikov, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, V.M. Ustinov, B.V. Volovik, I.L. Krestnikov, A.R. Kovsh, A.V. Sakharov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs(100)maxtrix

                   Semiconductors 30, 953 (1996)

 

448            O.G. Schmidt, N. Kirstaedter, D. Bimberg, N.N. Ledentsov, M.-H. Mao, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov

                   Prevention of gain saturation by multi-layer quantum dot lasers

                   El. Lett. 32, 1302 (1996)

 

449            D. Bimberg, M. Grundmann, N.N. Ledentsov

                   Quantenpunkt-Laser

                   Spektrum der Wissenschaft, p. 64 (1996)

 

450            D. Bimberg

                   Quantum wire and dot lasers and related technologies

                   Proc. 15th IEEE Semiconductor Laser Conf., 13-18 Oct., p. 5 (1996)

 

451            S.V. Zaitsev, N.Yu. Gordeev, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, I.V. Kochnev, N.N. Ledentsov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov

                   Room temperature quantum dot lasers: From basic experiments to first device oriented structures

                   Proc. Laser- and Electro-Optics Soc., Annual Meeting, LEOS Vol 1, p. 320 (1996)

 

452            Zh.I. Alferov, N.A. Bert, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, A.O. Kosogov, I.L. Krestinikov, N.N. Ledentsov, M.V. Maximov, V.M. Ustinov, A.F. Tsatsul’nikov, Yu.N. Sherniakov, D. Bimberg

                   Room temperature 1.05 µm injection lasing via ground state of vertically-coupled InGa-GaAs quantum dot

                   Proc. CLEO, <st1:place w:st="on"><st1:city w:st="on">Anaheim</st1:city>, <st1:state w:st="on">California</st1:state></st1:place> (1996)

 

453            F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, P. Werner

                   Self organization-processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition

                   Appl. Phys. Lett. 68, 3284 (1996)

 

454            P.S.Kop'ev, N.N.Ledentsov, V.M.Ustinov, I.V.Kochnev, N.A.Bert, A.Yu.Egorov, A.E.Zhukov, V.V.Komin, A.O.Kosogov, I.L.Krestnikov, M.V.Maximov, S.S.Ruvimov, A.V.Sakharov, Yu.M.Sherniakov, A.F.Tsatsul'nikov, S.V.Zaitsev, Zh.I.Alferov, D.Bimberg

                   Self-organized InAs-GaAs quantum dot injection laser structure

                   Summaries of papers presented at Quantum Electronics and Laser Science Conf., QUELS, June '96, p. 181 (1996)

 

455            St. Kollakowski, U. Schade, E.-H. Böttcher, D. Kuhl, D. Bimberg, P. Ambrée, K. Wandel

                   Silicon Dioxide passivation of InP/InGaAs MSM-photodetectors

                   J. Vac. Sci. Technol. B 14, 1712 (1996)

 

456            H. Nakashima, M. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg

                   Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE

                   Physica B 227, 291 (1996)

 

457            G.M. Guryanov, G.E. Cirlin, V.N. Petrov, N.K. Polyakov, A.O. Golubok, S.Ya. Tipissev, V.B. Gubanov, Yu.B. Samsonenko, N.N. Ledentsov, M. Grundmann, D. Bimberg, Zh.I. Alferov

                   STM and RHEED study of InAs/GaAs quantum dots obtained by submonolayer epitaxial techniques

                   Surf. Sci. 352, 651 (1996)

 

458            V.A. Shchukin, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg

                   Strain-induced equilibrium morphology of heteroepitaxial semiconductor systems

                   Proc. 23rd Intern. Symp. on Compound Semiconductors, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>  (1996)

 

459            V.A. Shchukin, N.N.  Ledentsov, P.S. Kop’ev, M. Grundmann, D. Bimber

                   Strain-induced formation and tuning or ordered nanostructures on crystal surfaces

                   Surf. Sci. 352, 117 (1996)

 

460            A.O. Kosogov, P. Werner, U. Gösele, N.N. Ledentsov, V.M. Ustinov, A.Yu Egorov, A.E. Zhukov, P.S. Kop'ev, N.A. Bert, Zh.I. Alferov, D. Bimberg

                   Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing

                   Appl. Phys. Lett. 69, 3072 (1996)

 

461            A.A. Darhuber, J. Stangl, V. Holy, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev

                   Structural characterization of single and multiple layers of self-assembled InGaAs quantum dots by high resolution x-ray diffraction and reflectivity

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 1293 (1996)

 

462            S. Ruvimov, Z. Lilienthal-Weber, N.N. Ledentsov, G. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop'ev, Zh.I. Alferov, K. Scheerschmidt, U. Gösele

                   TEM structural characterization of nm-scale islands in highly mismatched systems

                   Proc. Mat. Res. Soc. Symp. 421, 383-8 (1996)

 

463            A.O. Kosogov, P. Werner, N.A. Bert, S.G. Konnikov, A.A. Suvorova, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, P. Schittenhelm, G. Abstreiter

                   TEM study of nm-scale semiconductor islands in lattice-mismatched systems

                   23rd Intern. Symp. on Compound Semiconductors, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, Inst. Phys. Conf. Ser. No 155, 851 (1996)

 

464            V.A. Shchukin, N.N. Ledentsov, V.G. Malyshkin, I-P. Ipatova, P.S. Kop'ev, D. Bimberg

                   Thermodynamic theory of spontaneous ordering of semiconductor nanostructures

                   Proc. Intern. Symp. Nanostructures: Physics And Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 439 (1996)

 

465            E.H. Böttcher, E. Dröge, D. Bimberg, A. Umbach, H. Engel

                   Ultra-wideband (> 40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors

                   IEEE Photonics Technol. Lett. 8, 1041 (1996)

 

466            M. Zacharias, J. Christen, J. Bläsing, D. Bimberg

                   Visible luminescence from Ge nanocrystals embedded in a-Si1-xOx films: optical characterization correlated with the size distribution

                   J. Non-Cryst. Solids 198-200, 115 (1996)

 

467            St. Kollakowski, H. Kräutle, Ch. Lemm, E.H. Böttcher, D. Bimberg

                   waveguide-integrated InP/InGaAs/InAlGa/As MSM photodetectors

                   Proc. 8th Intern. Conf. on Indium Phosphide and Related Materials, 21-25 April, p. 223 (1996)

 

468            M. Kappelt, D. Bimberg

                   Wet chemical etching of high quality V-grooves with {111} a side walls on (001) InP

                   J. Electrochem. Soc. 143, 3271 (1996)

 

469            M. Lowitsch, M. Rabe, N. Hoffmann, R. Mitdank, B. Stegemann, F. Henneberger, M. Grundmann, V. Türck, D. Bimberg

                   Zero-dimensional excitons in (Zn, Cd) Se quantum structures

                   Proc. 23rd Intern. Conf. Phys. Semic., Berlin, M. Scheffler and R. Zimmermann eds., World Scientific Singapore, p. 1457 (1996)

 

470            M. Lowitsch, M. Rabe, B. Stegemann, F. Henneberger, Grundmann, V. Türck, D. Bimberg

                   Zero-dimensional excitons in (Zn, Cd) Se quantum structures

                   Phys. Rev. B 54, R11074 (1996)

 

Publikationen 1997 - 2000

 

471            Yu.M. Shernyakov, A.Yu. Egorov, A.E. Zhukov, S.V. Zaitsev, A.R. Kovsh, I.L. Krestnikov A.V. Lunev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   1 W room temperature continuous wave operation of quantum dot injection heterolaser

                   Tech. Phys. Lett. 23, 51 (1997)

 

472            H. Pfitzenmaier, E.H. Böttcher, E. Dröge, D. Bimberg

                   110 GHz slow-wave electrodes for velocity-matched distributes MSM photo­detectors with integrated bias load

                   Proc. IEEE Laser Electro-Optics Society 1997 Annual Meeting (LEOS' 97), <st1:city w:st="on"><st1:place w:st="on">San Francisco</st1:place></st1:city> 2, p. 218 (1997)

 

473            E.H. Böttcher, E. Dröge, D. Bimberg

                   200 GHz distributed InGaAs metal-semiconductor-metal photodetectors for the long-wavelength regime

                   Inst. Phys. Conf. Ser. 155, 55 (1997)

 

474            N.N. Ledentsov, J. Böhrer, D. Bimberg, S.V. Zaitsev, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, U. Gösele, S.S. Ruvimov

                   3D arrays of quantum dots for laser applications

                   Mat. Res. Soc. Symp. Proc. 421, 133 (1997)

 

475            A. Dadgar, L. Köhne, J. Hyeon, T. Grundemann, O. Stenzel, M. Straßburg, M. Kuttler, R. Heitz, D. Bimberg, H. Schumann

                   4d- and 5d-transition metal acceptor doping of InP

                   J. Cryst. Growth 170, 173 (1997)

 

476            A. Dadgar, R. Engelhardt, M. Kuttler, D. Bimberg

                   Capacitance transient study of the deep Fe acceptor in indium phosphide

                   Phys. Rev. B 56, 10241 (1997)

 

477            R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q. Xie, P. Chen, A. Madhukar, V.M. Ustinov, P.S. Kop'ev, Zh.I.Alferov

                   Carrier capture and relaxation in InAs/GaAs quantum dots

                   Phys. Low Dim. Mat. 11/12, 163 (1997)

 

478            M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann

                   Carrier dynamics in quantum dots: Modeling with master equations for the transitions between micro-states

                   phys. stat. sol. (b) 203, 121 (1997)

 

479            D. Bimberg, M. Grundmann

                   Characterization of quantum wires and dots by electron microscopy

                   Proc. 21st Congress of the Italian Society of Electron Microscopy, <st1:place w:st="on"><st1:city w:st="on">Taormina</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place> (1997)

 

480            M.V. Maximov, A.V. Sakharov, I.V. Kochnev, N.N. Ledentsov, A.F. Tsatsul'nikov, B.V. Volovik, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg, A.O. Kosogov, P. Werner

                   Coherent superdots formed by multicycle InGaAs-(AlGa)As metal-organic chemical vapour deposition

                   Proc. EW MOVPE VII, <st1:state w:st="on"><st1:place w:st="on">Berlin</st1:place></st1:state>, p. E9 (1997)

 

481            L. Aigouy, T. Holden, F. Pollak, N.N. Ledentsov, W.M. Ustinov, P.S. Kop'ev, D. Bimberg

                   Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

                   Appl. Phys. Lett. 70, 3329 (1997)

 

482            L. Aigouy, T. Holden, F.H. Pollak, N.N. Ledentsov, V.M. Ustinov, P.S. Kop’ev, D. Bimberg

                   Coupled quantum dot-based InA/GaAs laser structure studied by contactless electroreflectance and surface photovoltage spectroscopy

                   Proc. of the Fourth Intern. Symp. on Quantum Confinement: Nanoscale Materials, Devices, and Systems, in: Electr. Soc. Proc. 11, 146 (1997)

 

483            L. Aigouy, T. Holden, F. Pollak, N.N. Ledentsov, W.M. Ustinov, P.S. Kop'ev, D. Bimberg

                   Coupled quantum dot-based InAs-GaAs laser structure studied by contactless electroreflectance and surface photovoltage spectroscopy

                   Proc. Electrochem. Soc. 97, 146 (1997)

 

484            G.E. Cirlin, V.N. Petrov, V.G. Dubrovskii, A.O. Golubok, S.Ya. Tipissev, G.M. Guryanov, M.V. Maximov, N.N. Ledentsov, D. Bimberg

                   Direct formation of InGaAs/Gaas quantum dots during submonolayer epitaxies from molecular beams

                   Czechoslovak J. of Physics 47, 379 (1997)

 

485            M. Kuttler, S. Straßburg, O. Stier, U.W. Pohl, D. Bimberg, E. Kurtz, J. Nürnberger, G. Landwehr, M. Behringer, D. Hommel

                   Doping dependent ZnCdSe/ZnSe-superlattice disordering

                   Appl. Phys. Lett. 71, 243 (1997)

 

486            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott

                   Edge and surface emitting quantum dot lasers

                   Technical Digest of Intern. Electron. Devices Meeting IEDM, <st1:state w:st="on"><st1:place w:st="on">Washington</st1:place></st1:state>, p. 381 (1997)

 

487            G.E. Cirlin, V.N. Petrov, A.O. Golubok, S.Ya. Tipissev, V.G. Dubrovskii, G.M. Guryanov, N.N. Ledentsov, D. Bimberg

                   Effect of growth kinetic on the InAs/GaAs quantum dot arrays formation on vicinal surfaces

                   Surf. Sci. 377-379, 895 (1997)

 

488            R. Heitz, M. Veit, N.N. Ledentsov, A. Hoffmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov

                   Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

                   Phys. Rev. B 56, 10435 (1997)

 

489            M. Grundmann, D. Bimberg

                   Formation of quantum dots in two-fold cleaved edge overgrowth

                   Phys. Rev. B 55, 4054 (1997)

 

490            M. Grundmann, D. Bimberg

                   Gain and threshold of quantum dot lasers: Theory and comparison to experiments

                   Jpn. J. Appl. Phys. 36, Part 1, No. 6B, 4181 (1997)

 

491            I.V. Kochnev, N.N. Ledentsov, V.M. Maximov, A.F. Tsatsul'nikov, A.V. Sakharov, B.V. Volovik, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele

                   Growth and characterization of coherent quantum dots grown by single- and multi-cycle InGaAs-GaAs metal-organic chemical vapour deposition

                   Jpn. J. Appl. Phys. 36, 4107 (1997)

 

492            M.V. Maximov, Yu.M. Shernyakov, N.N. Ledentsov, A.F. Tsatsul'nikov, Zhao Zhen, A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   High power InGaAs/AlGaAs quantum dot laser

                   Proc. Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 202 (1997)

 

493            M.V. Maximov, Yu.M. Shernyakov, I.V. Kochnev, A.V. Sakharov, N.N. Ledentsov, A.F. Tsatsul'nikov, B.V. Volovik, A.V. Lunev, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg, A.O. Kosogov, P. Werner

                   High power strained MOCVD (In, Ga, Al)As lasers with laterally modulated active region

                   Proc. EW MOVPE VII, <st1:state w:st="on"><st1:place w:st="on">Berlin</st1:place></st1:state>, p. E12 (1997)

 

494            A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner

                   High resolution x-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self assembled InGaAs quantum dots

                   Jpn. J. Appl. Phys. 36, 4084 (1997)

 

495            F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, P. Werner

                   InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

                   Jpn. J. Appl. Phys. 36, 4129 (1997)

 

496            D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev, V.M. Ustinov, S.V. Zaitsev, M.V. Maximov

                   InGaAs/GaAs quantum dot lasers

                   NATO Advanced Study Institute Series E344, Kluwer, Abstreiter et al. eds., p. 315 (1997)

 

497            M.V. Maximov, I.V. Kochnev, Yu.M. Sherniakov, S.V. Zaitsev, N.Yu. Gordeev, A.F. Tsatsul'nikov, A.V. Sakharov, I.L. Krestnikov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner, U. Gösele

                   InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (To = 385 K) grown by metal organic chemical vapour deposition

                   Jpn. J. Appl. Phys. 36, 4221 (1997)

 

498            D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop'ev, V.M. Ustinov

                   InGaAs-GaAs quantum-dot lasers

                   IEEE J. Selected Topics in Quantum Electronics 3, 196 (1997)

 

499            A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, M.V. Ustinov, N.N. Ledentsov, M.V. Maksimov, A.F. Tsatsul'nikov, S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix

                   Semiconductors 31, 411 (1997)

 

500            A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, A. Krost, D. Bimberg

                   Lasing properties of a single, highly strained InAs monolayer in bulk GaAs

                   Phys. Low-Dim. Struct. 11/12, 27 (1997)

 

501            A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, A.O. Kosogov, P. Werner

                   Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

                   Appl. Phys. Lett. 70, 955 (1997)

 

502            N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott, D. Bimberg

                   Low threshold (> 200 µA, 300 K) vertical cavity lasers based on vertically coupled quantum dots emitting at ~1 µm

                   Proc. Intern. Symp. Nanostructures: Physics & Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 195 (1997)

 

503            V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, A.E. Zhukov, M.V. Maximov, A.F. Tsatsul'nikov, N.Yu. Gordeev, S.V. Zaitsev, Yu.M. Shernyako, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, J. Böhrer, D. Bimberg, A.O. Kosogov, P. Werner, U. Gösele

                   Low-threshold injection lasers based on vertically coupled quantum dots

                   J. Cryst. Growth 175/176, 689 (1997)

 

504            P. Fischer, J. Christen, M. Takeuchi, H. Nakashima, K. Maehashi, K. Inoue, G. Austing, M. Grundmann, D. Bimberg

                   Luminescence characterization of selforganized GaAs quantum wires: Carrier capture and thermalization

                   J. Electrochem. Soc. Proc. 97-11, 366 (1997)

 

505            D. Bimberg, N.N. Ledentsov, M. Grundmann, R. Heitz, J. Böhrer, V.M. Ustinov, I.V. Kochnev, P.S. Kop'ev, Zh.I. Alferov

                   Luminescence properties of semiconductor quantum dots

                   J. Luminescence 72-74, 34 (1997)

 

506            F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, A.O. Kosogov, P. Werner, D. Bimberg

                   MOCVD grown InAs/GaAs quantum dot lasers

                   Proc. EW MOVPE VII, Berlin , p. E7 (1997)

 

507            O. Stier, D. Bimberg

                   Modeling of strained quantum wires using 8-band k•p theory

                   Phys. Rev. B 55, 7726 (1997)

 

508            A.F. Tsatsul’nikov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, A.A. Suvorova, P.S. Kop’ev, D. Bimberg

                   Modulation of a quantum well potential by a quantum-dot array

                   Semiconductors 31, 88 (1997)

 

509            H. Pfitzenmaier, E. H. Böttcher, E. Dröge,D. Bimberg

                   Monolithically Integrated Passive Microwave Devices for Distributed Millimetre-Wave Metal-Semiconductor-Metal Photodetectors

                   Proc. Microwave Photonics ´97, <st1:place w:st="on"><st1:city w:st="on">Duisburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 115 (1997)

 

510            R. Schur, J. Böhrer, M. Nishioka, Y. Arakawa, D. Bimberg

                   Observation of spinodal phase separation and quantum dot in InGaAs/GaAs layers grown at down-ramped growth temperatures

                   Proc. 9th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Hyannis</st1:city>, <st1:state w:st="on">MA</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 87 (1997)

 

511            M.V. Maksimov, Yu.M. Shernyakov, S.V. Zaitsev, N.Yu. Gordeev, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, A.O. Kosogov, A.V. Sakharov, N.N. Ledentsov, V.M. Ustinov, A.F. Tsatsul'nikov, Zh.I. Alferov, J. Böhrer, D. Bimberg

                   Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix

                   Semiconductors 31, 571 (1997)

 

512            H. Nakashima, T. Takeuchi, K. Inoue, T. Fukunaga, D. Bimberg, J. Christen

                   Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy

                   Superl. and Microstr. 22, 512 (1997)

 

513            A.F. Tsatsul'nikov, N.N. Ledentsov, M.V. Maksimov, B.Ya. Mel'tser, P.V. Nekludov, S.V. Shaposhinikov, B.V. Volovik, I.L. Krestnikov, A.V. Sakharov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Photoluminescence of InSb quantum dots in GaAs and GaSb matrices

                   Semiconductors 31, 55 (1997)

 

514            E.H. Böttcher, E. Dröge, A. Strittmatter, D. Bimberg

                   Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photo­detectors

                   Electron. Lett. 33, 912 (1997)

 

515            E.H. Böttcher, E. Dröge, D. Bimberg, A. Umbach, H. Engel, M. Collischon

                   Polarization dependence of the response of micrometer and submicrometer InGaAs metal-semiconductor-metal photodetectors

                   IEEE Photon. Technol. Lett. 9, 809 (1997)

 

516            S. Hansmann, K. Dahlhoff, B. Kempf, R. Göbel, E. Kuphal, B. Hübner, H. Burkhard, Krost, K. Schatke, D. Bimberg

                   Properties of loss-coupled distributed feedback laser arrays for wavelength division multiplexing systems

                   J. Lightwave Technol. 15, 1191 (1997)

 

517            N.N. Ledentsov, D. Bimberg, Yu.M. Sherniakov, V. Kochnev, M.V. Maximov, A.V. Sakharov, J.L. Krestnikov, A.Yu Egorov, A.E. Zhukov, B.V. Volonik, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, A.O. Kosogov, P. Werner

                   Properties of strained (In, Ga, Al)As lasers with laterally modulated active region

                   Appl. Phys. Lett. 70, 2888 (1997)

 

518            M. Kappelt, V. Türck, O. Stier, D. Bimberg, H. Cerva, D. Stenkamp, P. Veit, T. Hempel, J. Christen

                   Properties of ternary In(<st1:place w:st="on"><st1:city w:st="on">Al</st1:city>, <st1:state w:st="on">Ga</st1:state></st1:place>)As layers grown on InP V-grooves by MOCVD for the fabrication of quantum wire structures

                   Proc. EW MOVPE VII, Berlin, p. E5 (1997)

 

519            D. Bimberg

                   Quantenpunkte oder der Weg vom Festkörper zum Atom

                   forschung - Mitteilungen der DFG Apr 97, p. 17 (1997)

 

520            M. Kappelt, V. Türck, O. Stier, D. Bimberg, D. Stenkamp

                   Quantization effects of InGaAs/InP-quantum wires grown on patterned substrates

                   Proc. 9th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Hyannis</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 83 (1997)

 

521            M.V. Maksimov, N.Yu Gordeev, S.V. Zaitsev, P.S. Kop’ev, I.V. Kochnev, N.N. Ledentsov,A.V. Lunev, S.S. Ruvimov, A.v. Sakharov, A.F. Tsatsul’nikov, Yu.M. Shernyskov, Zh.I. Alferov, D. Bimberg

                   Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 C

                   Semiconductors 31, 124 (1997)

 

522            V. Türck, O. Stier, F. Heinrichsdorff, M. Grundmann, D. Bimberg

                   Quantum wires in staggered band line-up single heterostructures with corrugated interfaces

                   Phys. Rev. B 55, 7733 (1997)

 

523            Yu.M. Shernyakov, A.Yu. Egorov, A.E. Zhukov, S.V. Zaitsev, A.R. Kovsh, I.L. Krestnikov, A.V. Lunev, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, Chao Chen, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

abstract    Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

                   Tech. Phys. Lett. 23, 149 (1997)

 

524            S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, A.M. Georgievski, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

abstract    Quantum-dot lasers: Principal components of the threshold current density

                   Semiconductors 31, 947 (1997)

 

525            S.V. Zaitsev, N.Yu. Gordeev, Yu.M. Sherniakov, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, N. Kirstaedter, D. Bimberg

                   Radiation characteristics of injection lasers based on vertically coupled quantum dots

                   J. Superl. Microstr. 21, 559 (1997)

 

526            Ch. Lemm, St. Kollakowski, D. Bimberg, K. Janiak

                   Reactive ion etching of InP/InAlGaAs/InGaAs heterostructures

                   J. Electrochem. Soc. 144, L255 (1997)

 

527            M.-H. Mao, F. Heinrichsdorff, N, Kirstaedter, A. Krost, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Y. Egorov, A.E. Zhukov, P.S. Kop’ev, Z.I. Alferov

                   Relaxation oscillation frequency of self-organized stacked quantum dot lasers at room temperature

                   Proc. IEEE Laser Electro-Optics Society 1997 Annual Meeting (LEOS' 97), <st1:city w:st="on"><st1:place w:st="on">San Francisco</st1:place></st1:city> 2, p. 500 (1997)

 

528            C. Guasch, C.M. Sotomayor Torres, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, P.S. Kop'ev

                   Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots

                   Superlatt. and Microstructures 21, 509 (1997)

 

529            N.N. Ledentsov, D. Bimberg, I.L. Krestnikov, S.V. Ivanov, P.S. Kop'ev, A.V. Sakharov, Zh.I. Alferov, A. Rosenauer, D. Gerthsen, C.M. Sotomayor Torres

                   Response to 'Comment on "Ground State Exciton Lasing in CdSe Submonolayers Inserted in an ZnSe Matrix"`

                   Appl. Phys. Lett. 70, 2766 (1997)

 

530            S.V. Zaitsev, A.M. Georgievski, N.Yu. Gordeev, V.I. Kopchatov, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg, G. Buller, <st1:place w:st="on">I.</st1:place> Gontijo

                   Room temperature multi-stacked quantum dot lasers: basic components of threshold current density

                   Proc. Pacific Rim Conf. on Lasers and Electro-Optics CLEO, 14-18 July, p. 233 (1997)

 

531            F. Heinrichsdorff, M.-H. Mao, N. Kirstaedter, A. Krost, M. Grundmann, D. Bimberg

                   Room temperature operation of Al-free InAs/GaAs quantum dot lasers grown by metal organic chemical vapor deposition

                   Proc. 9th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Hyannis</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, PD 1 (1997)

 

532            F. Heinrichsdorff, M.-H. Mao, A. Krost, N. Kirstaedter, D. Bimberg, A.O. Kosogov, P. Werner

                   Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapour deposition

                   Appl. Phys. Lett. 71, 22 (1997)

 

533            M. Grundmann, D. Bimberg

                   Selbstordnende Quantenpunkte: Vom Festkörper zum Atom

                   Phys. Bl. 53, 517 (1997)

 

534            F. Heinrichsdorff, A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, P. Werner

                   Self organization phenomena of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition

                   J. Cryst. Growth 170, 568 (1997)

 

535            V.A. Shchukin, N.N. Ledentsov, M. Grundmann, D. Bimberg

                   Self-ordering of nanostructures on semiconductor surfaces

                   NATO Advanced Study Institute Series E344, Kluwer, Abstreiter et al. eds., p. 257 (1997)

 

536            D. Bimberg, I.P. Ipatova, P.S. Kop’ev, N.N. Ledentsov, V.G. Malyshkin, V.A. Shchukin

                   Spontaneous ordering of semiconductor nanostructures

                   Physics-Uspekhi 40, 529 (1997)

 

537            A.A. Darhuber, J. Stangl, V. Holy, G. Bauer, A. Krost, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, A.O. Kosogov, P. Werner

                   Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

                   Thin Solid Films 306, 198 (1997)

 

538            M.-H. Mao, F. Heinrichsdorff, A. Krost, D. Bimberg

                   Study of high frequency response of self-organized stacked quantum dot lasers at room temperature

                   Electronics Lett. 33, 1641 (1997)

 

539            G.E. Cirlin, V.N. Petrov, N.K. Polyakov, V.N. Demidov, N.P. Korneeva. A.O. Golubok, S.A. Masalov, N.B. Ponomareva, N.N. Ledentsov, D. Bimberg

                   The mechanism of InAs/GaAs heteroepitaxial growth during submonolayer migration enhanced epitaxy

                   Proc. Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 296 (1997)

 

540            S.V. Zaitsev, N.Yu. Gordeev, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, M.V. Maksimov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   The properties of low-threshold heterolasers with clusters of quantum dots

                   Semiconductors 31, 455 (1997)

 

541            S.V. Zaitsev, N.Yu. Gordeev, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   The properties of low-threshold heterolasers with clusters of quantum dots

                   Semiconductors 31, 455 (1997)

 

542            M. Grundmann, D. Bimberg

                   Theory of quantum dot laser gain and threshold: Correlated versus uncorrelated electron and hole capture

                   phys. stat. sol. (a) 164, 297 (1997)

 

543            M. Grundmann, D. Bimberg

                   Theory of random population for quantum dots

                   Phys. Rev. B 55, 9740 (1997)

 

544            A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, M.V. Maksimov, A.F. Tsatsul'nikov, N.N. Ledentsov, N.Yu. Gordeev, S.V. Zaitsev, P.S. Kop'ev, Zh.I.Alferof, D. Bimberg

                   Thermal stability of vertically coupled InAs-GaAs quantum dot arrays

                   Semiconductors 31, 84 (1997)

 

545            N.N. Ledentsov, N. Kirstaedter, M. Grundmann, D. Bimberg, V.M. Ustinov, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov

                   Three-dimensional arrays of self-ordered quantum dots for laser applications

                   Microelectronics J. 28, 915 (1997)

 

546            F. Hopfer, M. Schulze, D. Huhse, H. Schöll, H. Burkhard, V. Piataev, D. Bimberg

                   Ultra high repetition rate (20 .. 2000 Ghz) optical pulse generation

                   Technical Digest of Intern. Topical Meeting on Microwave Photonics, MWP'97, Schloß Hugenpoet, Duisburg/Essen, TH 2-2, p. 51 (1997)

 

547            E.H. Böttcher, E. Dröge, D. Bimberg, D. Kuhl, J. Frahm, E.B. Venus, E.L. Portnoi

                   Ultrafast ion-implanted InGaAs metal-semiconductur-metal photodetectors

                   Proc. IEEE Laser Electro-Optics Society 1997 Annual Meeting (LEOS' 97), <st1:city w:st="on"><st1:place w:st="on">San Francisco</st1:place></st1:city> 2, p. 319 (1997)

 

548            M. Takeuchi, T. Takeuchi, Y. Inoue, T. Kato, K. Inoue, H. Nakashima, K. Maehashi, P. Fisher, J. Christen, M. Grundmann, D. Bimberg

                   Uniform GaAs quantum wires formed on vicinal GaAs (110) surfaces by two-step MBE growth

                   Superl. and Microstr. 22, 43 (1997)

 

549            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg

                   Vertical cavity lasers based on vertically coupled quantum dots

                   Electronics Lett. 33, 1150 (1997)

 

550            N.N. Ledentsov, V.M. Ustinov, J.A. Lott, A.Yu Egorov, A.E. Zhukov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg

                   Vertical cavity surface emitting lasers based on vertically coupled quantum dots

                   Proc. IEEE Laser Electro-Optics Society 1997 Annual Meeting (LEOS' 97), <st1:city w:st="on"><st1:place w:st="on">San Francisco</st1:place></st1:city>, p. 502 (1997)

 

551            St. Kollakowski, E.H. Böttcher, Ch. Lemm, A. Strittmatter, D. Bimberg, H. Kräutle

                   Waveguide-integrated InP/InGaAs/InAlGaAs metal-semiconductor-metal photo­detectors with very high vertical coupling efficiency

                   IEEE Photon. Technol. Lett. 9, 496 (1997)

 

552            K. Ohkawa, M. Behringer, H. Wenisch, M. Fehrer, B. Jobst, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg, G. Bacher, D. Tönnies, A. Forchel

                   ZnSe-based laser diodes and LEDs grown on ZnSe and GaAs substrates

            phys. stat. sol (b) 202, 683 (1997)

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