Inhalt des Dokuments
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1967 - 1994
Zum Teil sind Arbeiten gelistet, an denen Prof. Bimberg außerhalb der TU Berlin gearbeitet hat.
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D. Bimberg, W. Dultz, K. Fussgänger
Symmetry assignment of the B-band in KI:T1+
Phys. Lett. 25A, 766 (1967)
2 D. Bimberg, W. Dultz, W. Gebhardt
Electron-lattice interaction with Eg and T2g modes in KC1:Tl+, KBr:T1+, KI:T1+
Color Centers in Alkali Halides, Intern. Symp., <st1:place w:st="on"><st1:city w:st="on">Rome</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 38 (1968)
3 D. Bimberg, W. Dultz, K. Fussgänger, W. Gebhardt
Electron-lattice interaction in the absorption spectra of Thallium-doped Alkali Halides
Z. Physik 224, 364 (1969)
4 D. Bimberg, W. Dultz, W. Gebhardt
Stress-induced dichroism in T1+-doped potassium halides
Phys. stat. sol. 31, 661 (1969)
5 D. Bimberg, W. Schairer, M. Sondergeld, T.O. Yep
Bound exciton luminescence in epitaxial Sn-doped GaAs
J. of Luminescence 3, 175 (1970)
6 D. Bimberg, M. Sondergeld, E. Grobe
Thermal dissociation of excitons bound to neutral acceptors in high-purity GaAs
Phys. Rev. B 4, 3451 (1971)
7 D. Bimberg, W. Schairer
Non-hydrogenic exciton and energy Gap of GaAs
Phys. Rev. Lett. 28, 442 (1972)
8 A. Engelhardt, D. Bimberg
Osteotomie mit Laser
Laser 4, 54 (1972)
9 D. Bimberg, H.J. Queisser
Radiative recombination of screened excitons
Proc. of the 11th Intern. Conf. on the Phys. of Semic., <st1:place w:st="on"><st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region></st1:place>, p. 157 (1972)
10 D. Bimberg, F. Willmann, M. Blätte
Zeeman effect of noncubic copper centers in epitaxial GaAs
Proc. of the Intern. Conf. of Luminescence, <st1:place w:st="on"><st1:city w:st="on">Leningrad</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> (1972)
11 F. Willmann, W. Dreybrodt, M. Bettini und E. Bauser, D. Bimberg
GaAs luminescence transitions to acceptors in magnetic fields
Phys. stat. sol. (b) 60, 751 (1973)
12 F. Willmann, D. Bimberg, M. Blätte
Optical properties of excitons bound to copper-complex centers in GaAs
Phys. Rev. B 7, 2473 (1973)
13 D. Bimberg, W. Rühle
Direct determination of the free electron mass and g-value in GaSb
Proc. of the 12th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Stuttgart</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 561 (1974)
14 D. Bimberg, W. Rühle
Optical observation of the magnetic freezeout effect in GaSb
J. de Physique 35/4, C3-215 (1974)
15 D. Bimberg
Radiative recombination of bound excitons in semiconducters with Td-symmetry in magnetic fileds
Proc. of the Intern. Conf. on "The Application of High Magnetic Fields in Semiconductor Physics", <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 339 (1974)
16 D. Bimberg, K. Cho, W. Kottler
Zeeman and diamagnetic effects of acceptors in III-V-compounds
Proc. of the Intern. Colloque on "Physics in High Magnetic Fields", <st1:place w:st="on"><st1:city w:st="on">Grenoble</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, p. 339 (1974)
17 D. Bimberg, D.J. Robbins, D.R. Wight, J.P. Jeser
CeP5014, A new ultrafast scintillator
Appl. Phys. Lett. 27, 67 (1975)
18 W. Rühle, D. Bimberg
Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb
Phys. Rev. B 12, 2382 (1975)
19 K. Hess, D. Bimberg, N.O. Lipari, J.U. Fischbach und M. Altarelli
Band parameter determination of III-V-compounds from high-field
Magnetoreflectance of Excitons
(1976)
20 D. Bimberg
Bound holes in high magnetic fields
Proc. of the 3rd Intern. Conf. on "The Application of High Magnetic Fields in Semiconductor Physics", p. 415 (1976)
21 H.L. Störmer, D. Bimberg
Deformation of g-electron-hole drops in a magnetic field
Comm. on Physics 1, 131 (1976)
22 P.J. Dean, D. Herbert, D. Bimberg, J. Choyke
Donor exciton satellites in cubic silicon carbide: Multiple bound excitons revisited
Phys. Rev. Lett. 37, 1635 (1976)
23 J.U. Fischbach, W. Rühle, D. Bimberg, E. Bauser
Experimental determination of the anisotropy of the exciton wavefunction of GaAs in a magnetic field
Solid Stat. Commun. 18, 1255 (1976)
24 D. Bimberg, P.J. Dean, F. Mansfield
Novel phenomena in donor-bound excitons in Gallium Phosphide
J. of Luminescence 12/13, 271 (1976)
25 R.W. Martin, H.L. Störmer, W. Rühle, D. Bimberg
Photoluminescence of electron-hole-drops in Ge in high magnetic fields
J. of Luminescence 12/13, 645 (1976)
26 W. Schairer, D. Bimberg, W. Kottler, K. Cho, Martin Schmidt
Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAs
Phys. Rev. B 13, 3452 (1976)
27 W. Rühle, D. Bimberg, W. Jakowetz, R. Linnebach
Radiative decay of bound excitons in GaSb: Evidence of deep A+-impurity states
J. of Luminescence 12/13, 501 (1976)
28 P.J. Dean, D. Herbert, J. D. Bimberg, Choyke
Theory of multiple bound excitons at donor and acceptors
Proc. of the 13th Intern. Conf. on the Phys. of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Rome</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 1142 (1976)
29 F. Salvan, Ph. Mathiez, J.C. McGroddy, D. Bimberg, H.L. Störmer
Damping of the motion of electron-hole drops in magnetic fields
Il Nuovo Cimento 39 B, 645 (1977)
30 D. Bimberg, K. Hess, N.O. Lipari, J.U. Fischbach, M. Altarelli
Free excitons in InP in high magnetic fields
Physica 81 B+C, 139 (1977)
31 H. Venghaus, P.E. Simmonds, J. Lagois, P.J. Dean, D. Bimberg
Magnetoreflectance of the G6 - G8 exciton in ZnTe
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 24, 5 (1977)
32 D. Bimberg, H.L. Störmer
Orientational dependence of the shape of a g-electron-hole-liquid in a magnetic field
Il Nuovo Cimento 39 B, 615 (1977)
33 D. Bimberg, J.P. Dean
Potential-dependent electron and hole g values and quenched diamagnetism in GaP, Part II: application of the theory of free and bound holes in a magnetic field to the pseudoacceptors (Do, X)
Phys. Rev. B 15, 3917 (1977)
34 P.J. Dean, D. Bimberg, F. Mansfield
Potential-dependent electron and hole g-values and quenched diamagnetism in GaP, Part I: experimental results and properties of the donor states
Phys. Rev. B 15, 3906 (1977)
35 D. Bimberg, H.L. Störmer
Verformung laserinduzierter elektrischer Ladungstropfen durch hohe Magnetfelder
Laser + Elektro-Optik 3, 28 (1977)
36 D. Bimberg
Wannier-Mott polaritons in magnetic fields
Festkörperprobleme XVII, 195, ed. by J. Treusch, Vieweg Verlag (1977)
37 M.S. Skolnick, D. Bimberg
Angular-dependent magneto-luminescence study of the layer compound 2H-PbI2
Phys. Rev. B 18, 7080 (1978)
38 D. Bimberg
Anomaly of the linear and quadratic Zeeman effect of an effective mass acceptor in azincblende semiconductor: C in GaAs
Phys. Rev. B 18, 1794 (1978)
39 D. Bimberg, M.S. Skolnick, L.M. Sander
Camel's back induced stabilization of electron-hole liquids: GaP
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 27, 949 (1978)
40 D. Bimberg, M.S. Skolnick, W.J. Choyke
Observation of an electron-hole liquid in cubic SiC
Phys. Rev. Lett. 40, 56 (1978)
41 M.S. Skolnick, D. Bimberg, W.J. Choyke
The electron-hole-liquid in 15R-SiC
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 28, 865 (1978)
42 M.S. Skolnick, D. Bimberg
Band parameter determination in the layer compound 2H-PbI2
Inst. Phys. Conf. Ser. 43, 899 (1979)
43 W. Ekardt und K. Lösch, D. Bimberg
Determination of the analytical and the nonanalytical part of the exchange interaction of InP and GaAs from polariton spectra in intermediate magnetic fields
Phys. Rev. B 20, 3303 (1979)
44 D. Bimberg, A. Baldereschi
Non-hydrogenic magnetic behaviour of impurities in semiconductors with degenerate bands: GaAs:C and GaAs:Sn
Inst. Phys. Conf. Ser. 43, 403 (1979)
45 D. Bimberg, M.S. Skolnick
Phonon wind induced anomalous dependence of the electron-hole drop luminescence in Ge at low magnetic fields
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 32, 1311 (1979)
46 D. Bimberg, M.S. Skolnick, L.M. Sander
Properties of the electron-hole-liquid in GaP
Phys. Rev. B 19, 2231 (1979)
47 D. Bimberg, M.S. Skolnick, L.M. Sander
Stabilization of the electron-hole-liquid by the Camel´s back in GaP
Inst. Phys. Conf. Ser. 43, 175 (1979)
48 D. Bimberg, L.M. Sander, M.S. Skolnick, U. Rössler, W.J. Choyke
The electron-hole liquid in a polar semiconductor: Cubic SiC
J. Luminescence 18/19, 542 (1979)
49 D. Bimberg
The electron-hole-liquid in magnetic fields (review)
J. of Magnetism and Magnetic Materials 11, 91 (1979)
50 P.J. Dean, D. Bimberg, W.J. Choyke
The nature of persistent radiative centres in radiation-damaged 6H silicon carbide
Inst. Phys. Conf. Ser. 46, 447 (1979)
51 M.S. Skolnick, D. Bimberg
Thermalization of the electron-hole-liquid in Ge between magnetic field split valleys
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 32, 715 (1979)
52 T.L. Reinecke, D. Bimberg
Calculations of the critical points and ground states for electron-hole droplet condensation in SiC, GaP, and AlAs
J. Phys. Soc. Japan 49, 499 (1980)
53 A. Bubenzer, D. Bimberg
Calorimetric absorption spectroscopy (CAS) of GaP: N,S
J. Phys. Soc. Japan 49, 255 (1980)
54 A. Steckenborn, H. Münzel, D. Bimberg
Helium-Kühleinrichtung zur Messung der Kathodolumineszenz in REM
Beitr. elektronenmikroskop. Direktabb. Oberfl. 13, 157 (1980)
55 D. Bimberg, M.S. Skolnick
Properties of electron-hole-drops in Ge in magnetic fields
Theoretical aspects and new developments in magneto-optics, J.T. Devreese ed., Plenum Press, N.Y.,p. 527 (1980)
56 M.S. Skolnick, D. Bimberg
Quantum oscillations and phonon-wind effects in the magnetic field luminescence lifetime and total intensity of the electron hole liquid in Ge
Phys. Rev. B 21, 4624 (1980)
57 R.G. Humphreys, D. Bimberg, W.J. Choyke
Wavelength modulated absorption in SiC polytypes
J. Phys. Soc. Japan 49, 519 (1980)
58 D. Bimberg, A. Altarelli, N.O. Lipari
A calculation of valence band masses, exciton and acceptor energies and the ground state properties of the electron-hole-liquid in cubic SiC
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 40, 437 (1981)
59 D. Bimberg, W. Bludau, R. Linnebach, E. Bauser
A dense electron-hole-liuqid in Ga0.08Al0.92As
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 37, 987 (1981)
60 D. Bimberg, A. Bubenzer
Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP
Appl. Phys. Lett. 38, 803 (1981)
61 A. Steckenborn, H. Münzel, D. Bimberg
Cathodoluminescence lifetime pattern of GaAs surface around dislocations
J. Luminescence 24/25, 351 (1981)
62 A. Steckenborn, H. Münzel, D. Bimberg
Cathodoluminescence lifetime pattern of semiconductor surfaces and structures
Inst. Physics. Conf. Proc. 60, 185 (1981)
63 H. Münzel, A. Steckenborn, D. Bimberg
Hot electrons in cold semiconductors: GaAs, InP and CdTe
J. Lumminescence 24/25, 569 (1981)
64 D. Bimberg, H. Münzel, A. Steckenborn
Inhibited relaxation of nonreasonantly excited electrons in a cold lattice
J. de Physique 42, C7-137 (1981)
65 M. Maier, D. Bimberg, H. Baumgart, F. Phillipp
SIMS investigation of p-n-junction quality in ion implanted cw-laser annealed silicon
Proc. Intern. SIMS Conf., <st1:place w:st="on"><st1:city w:st="on">Budapest</st1:city>, <st1:country-region w:st="on">Hungary</st1:country-region></st1:place> (1981)
66 R.G. Humphreys, D. Bimberg, W.J. Choyke
Wavelength modulated absorption in SiC
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 39, 163 (1981)
67 M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Philipp
Electrical and structural properties of p-n-junctions in cw laser annealed Silicon
Appl. Phys. 53, 5904 (1982)
68 H.J. Klein, D. Bimberg, H. Beneking, J. Kuhl, E.O. Göbel
High peak power picosecond light pulses from a directly modulated semiconductor laser
Appl. Phys. Lett. 41, 394 (1982)
69 K.H. Goetz, A.V. Solomonov, D. Bimberg, H. Jürgensen, M. Razeghi, H. Selders
Low temperature photoluminescence and absorption of GaxIn1-xAs/InP
J. de Physique 43, C5-383 (1982)
70 D. Bimberg
Pulse dispersion and preheating effects in ultrafast photoconductive detectors: In0.53Ga0.47As as example
Appl. Phys. Lett. 41, 368 (1982)
71 H.J. Klein, D. Bimberg, H. Beneking
Ultrafast thin film GaAs photoconductive detectors
Thin Solid Films 92, 273 (1982)
72 D. Bimberg
Bauelemente-Architektur mit III-V-Verbindungen
Wissenschaftsmagazin TUB 3,1, 99 (1983)
73 H. Münzel, D. Bimberg, A. Steckenborn
Direct evidence for screening of carrier-acoustic phonon interaction at low to medium carrier densities in GaAs
Physica B 117/118, 214 (1983)
74 Ch. Meyer, M. Maier, D. Bimberg
Matrix effect and surface oxidation in depth profiling of AlxGa1-xAs by secondary ion mass spectrometry using O2+ primary ions
J. Appl. Phys. 54, 2672 (1983)
75 K.H. Goetz, D. Bimberg, H. Jürgensen, J. Selders, A.V. Solomonov, G.F. Glinskii, M. Razeghi
Optical and crystall0ographic properties and impurity incorporation of GaxIn1-xAs (044<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition
J. Appl. Phys. 54, 4543 (1983)
76 M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp
SIMS-Untersuchungen der Qualität von pn-Übergängen in ionenimplantiertem und cw-laserausgeheiltem Silicium
Fresenius Z. Anal. Chem. 314, 309 (1983)
77 M. Maier, W. Korwald, D. Bimberg
Unambigous identification of two different processes governing the depth dependence of roughness in sputter profiling of polycrystalline layers
Proc. of the 3rd Intern. Conf. on Quantitative Surface Analysis; Teddington, GB (1983)
78 D. Bimberg, J. Christen, A. Steckenborn
Advantages of multiple quantum wells with abrupt interfaces for light emitting devices
<st1:place w:st="on"><st1:placename w:st="on">Springer</st1:placename> <st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Science. Series Vol. 53 (H.J. Queisser), p. 136 (1984)
79 D. Bimberg, K. Ketterer, H.E. Schöll, H.P. Vollmer
Generation of 4 ps light pulses from directly modulated V-groove lasers
Electr. Lett. 20, 640 (1984)
80 W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, E. Bauser
Heat treatment induced redistribution of vanadium in semiinsulated GaAs:V
Appl. Phys. Lett. 44, 1078 (1984)
81 E. Schöll, D. Bimberg, H. Schumacher, P.T. Landsberg
Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection
IEEE J. of Quantum Electronics QE20, 394 (1984)
82 J. Christen, D. Bimberg, A. Steckenborn, G. Weimann
Localisation induced electron-hole transition rate enhancement in GaAs Quantum wells
Appl. Phys. Lett. 44, 84 (1984)
83 E. Bauser, D. Bimberg, K. Heime, H.J. Queisser
Physik und Technologie der Verbindungshalbleiter
Report for the German Council, DFG (1984)
84 D. Bimberg, J. Mycielski
Recombination heating induced delayed energy relaxation of nonequilibrium charge carriers
Proc. of the 17th Intern. Conf. on the Physics of Semiconductors, D.J. Chadi and W.A. Harrison eds., Springer Verlag, N.Y.,p. 1367 (1984)
85 D. Bimberg, K. Ketterer, M. Brezina, E. Schöll, H.P. Vollmer
Avalanche generator triggered picosecond light pulses from unbiased V-groove GaAs/GaAlAs lasers
Physica 129B, 469 (1985)
86 K.H. Goetz, D. Bimberg, K.A. Brauchle, H. Jürgensen, J. Selders, M. Razeghi, E. Kuphal
Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP
Appl. Phys. Lett. 46, 277 (1985)
87 D. Bimberg, H.J. Eichler
Der Lasermarkt - Ein Milliardenmarkt (Interview)
Forschung Aktuell 7, 3 (1985)
88 D. Bimberg
Electron-hole liquids
Buchbeitrag in: Landoldt-Börnstein, Band III, 17 i, Springer Verlag, p. 297 (1985)
89 K.A. Brauchle, D. Bimberg, K.H. Goetz, H. Jürgensen, J. Selders
High resolution capacitance spectroscopy of LPE In0.53Ga0.47As grown on Fe doped InP-substrate and VPE GaAs grown on Cr-doped GaAs-substrate
Physica 129B, 426 (1985)
90 D. Bimberg, J. Christen, A. Steckenborn, G. Weimann, W. Schlapp
Injection, intersubband relaxation and recombination in GaAs multiple quantum wells
J. Luminescence 30, 562 (1985)
91 D. Bimberg, H. Münzel, A. Steckenborn, J. Christen
Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: carrier capture by impurities
Phys. Rev. B 31, 7788 (1985)
92 K.H. Goetz, K.A. Brauchle, D. Bimberg
Photoluminescence and DLTS measurements of deep defect levels in
Ga0.47In0.53As/InP
Proc. of the Intern. Conf. of Defect Recognition and Image Processing in III-V-Compounds, <st1:place w:st="on"><st1:city w:st="on">Montpellier</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1985)
93 D. Bimberg, J. Mycielski
Recombination heating of nonequilibrium carriers
Acta Physics Polonica A67, 167 (1985)
94 D. Bimberg, R. Bauer, D. Oertel, J. Mycielski, K.H. Goetz, M. Razeghi
Recombination of carriers confined at In0.53Ga0.47As/InP and
In0.75Ga0.25As0.5P0.5/InP interfaces
Physica 134B, 399 (1985)
95 D. Bimberg, J. Mycielski
Recombination-induced heating of free carriers in a semiconductor
Phys. Rev. B 31, 5490 (1985)
96 W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, E. Tomzig
Redistribution of Cr in GaAs: Cr and of V in GaAs: after implantation of Si, Be, or B and annealing in a controlled atmosphere
Appl. Phys. Lett. 46, 489 (1985)
97 A. Juhl, D. Oertel, R. Bauer, C. Maczey, D. Bimberg
Calorimetric absorption and photoluminescence studies of interface disorder in InGaAsP/InP quantum wells
Acta Physica Polonica A 69, 877 (1986)
98 D. Bimberg, J. Christen
Cathodoluminescence investigations of GaAs multiple quantum wells
Acta Physica Polonica A 69, 841 (1986)
99 K.W. Carey, S.Y. Wang, R. Hull, D. Oertel, R. Bauer, D. Bimberg
Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high speed p-i-n photodiodes
J. Crystal Growth 77, 558 (1986)
100 A. Juhl, D. Bimberg
Determination on the energy positions of the Fe2+ states in semi-insulating InP by the novel calorimetric absorption spectroscopy technique
Semi-Insulating III-V Mat., 477 (1986)
101 J. Christen, D. Bimberg, A. Steckenborn, G. Weiman, W. Schlapp
Dynamics of charge carrier energy relaxation and recombination in undoped and P-doped GaAs quantum wells
J. on Superlattices and Microstructures 2, 251 (1986)
102 D. Bimberg, J. Christen, A. Werner, M. Kunst, G. Weimann, W. Schlapp
Evidence for excitonic decay of excess charge carriers in high auality GaAs quantum wells at room temperature
Appl. Phys. Lett. 49, 76 (1986)
103 D. Bimberg, K. Ketterer, E.-H. Böttcher, E. Schöll
Gain modulation of unbiased semiconductor lasers: Ultrashort light-pulse generation in the 0.8 µm - 1.3 µm wavelength range
Intern. J. of Electronics 60, 23 (1986)
104 D. Bimberg, E.-H. Böttcher, K. Ketterer, H.P. Vollmer, H. Beneking, P. Röntgen
Generation and detection of 15-ps light pulses in the 1.2 - 1.3 µm wavelength range by semiconductor lasers and detectors
Appl. Phys. Lett. 48, 83 (1986)
105 D. Bimberg
Halbleiterlaser - Winzlinge von riesiger Bedeutung
Umschau 10, 527 (1986)
106 D. Bimberg
Lifetime reduction in quantum well structures
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Devices, P. Balk and O. G. Folberth eds., Elsevier, p. 101 (1986)
107 D. Bimberg
Neuartige Laserdioden auf der Basis strukturell induzierter Lokalisation und mikroskopischer Grenzflächenordnung in Quantentöpfen
Festschrift 60. Geburtstag Prof. Dr. W. Martienssen (1986)
108 D. Bimberg, H. Nakashima, T. Fukunaga
Observation of a single molecular terrace at AlGaAs/GaAs hetero interfaces by using scanning CL
Proc. Fall Meeting of the <st1:country-region w:st="on">Japan</st1:country-region> Society of Appl. Phys., <st1:city w:st="on"><st1:place w:st="on">Sapporo</st1:place></st1:city> (1986)
109 J. Christen, D. Bimberg
Recombination dynamics of carriers in GaAs-GaAlAs quantum well structures
Surface Science 174, 261 (1986)
110 R. Bauer, D. Bimberg, J. Christen, D. Oertel, D. Mars, J.N. Miller, T. Fukunaga, H. Nakashima
Reduced dimensionality induced doublet splitting of heavy hole excitons in GaAs quantum wells
Proc. 18th Intern. Conf. Phys. Semic., <st1:city w:st="on">Stockholm</st1:city> 1986 (O. Engström, ed.), p. 525, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region> (1987) (1986)
111 K.W. Carey, D. Bimberg, R. Hull, G. Reid, D. Oertel, R. Bauer
Structural and photoluminescent properties of GaInAs quantum wells with AlInAs or InP barriers grown by organometallic vapor phase epitaxy
Proc. Electronic Materials Conf., <st1:place w:st="on"><st1:city w:st="on">Amherst</st1:city>, <st1:state w:st="on">MA</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1986)
112 D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel
Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
J. Vac. Sci. Techn. B 4, 1014 (1986)
113 D. Bimberg, J. Mycielski
The recombination induced temperature change of non-equilibrium charge carriers
J. of Phys. C 19, 2363 (1986)
114 J.N. Miller, D.E. Mars, D. Bimberg, R. Bauer, D. Oertel
The structure of the MBE growth interface as revealed by quantum well luminescence and electron diffraction
Proc. Intern. MBE Conf., <st1:place w:st="on"><st1:city w:st="on">York</st1:city>, <st1:country-region w:st="on">England</st1:country-region></st1:place> (1986)
115 A. Juhl, A. Hoffmann, D. Bimberg, H.J. Schulz
Bond-exciton-related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy
Appl. Phys. Lett. 50, 1292 (1987)
116 D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D. Mars, J.N. Miller
Cathodoluminescence atomic scale images of monolayer islands at GaAs/AlGaAs interfaces
J. Vac. Sc. Techn. B 5, 1191 (1987)
117 A. Juhl, D. Oertel, C. Maczey, D. Bimberg, K. Carey, R. Hull, G.A. Reid
Correlation of optical spectra and atomic scale structure of AlInAs/GaInAs quantum wells
Superlattices and Microstructures 3, 205 (1987)
118 R. Hull, K.W. Carey, J.E. Fouquet, G.A. Reid, S.J. Rosner, D. Bimberg, D. Oertel
Correlation of structural, chemical and optical properties of GaInAs quantum well
Inst. Phys. Conf. 83, 209 (1987)
119 E.-H. Böttcher, K. Ketterer, D. Bimberg
Excitonic and electron-hole contribution to the spontaneous recombination of injected carriers in GaAs-GaAlAs multiple quantum well lasers at room temperatures
Appl. Phys. Lett. 50, 1074 (1987)
120 K. Ketterer, E.-H. Böttcher, D. Bimberg
High sensitivity picosecond optical pulse detection by semiconductor lasers via cross-correlation
Springer Series in Electronics and Photonics 22, 218 (1987)
121 D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel, J. Christen
Kinetics of island formation at the interface of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
Superlattices and Microstructures 3, 79 (1987)
122 D. Bimberg, R.K. Bauer, D. Oertel, D.E. Mars, J. N. Miller
Noncommutative structure of GaAs quantum well interfaces and inequivalent interface impurity incorporation
J. de Physique 48, C5-93 (1987)
123 K. Ketterer, E.-H. Böttcher, D. Bimberg
Picosecond optical sampling by semiconductor lasers
Appl. Phys. Lett. 50, 1471 (1987)
124 S. Munnix, D. Bimberg
Simulation of electron beam induced current at GaAs/AlGaAs heterojunctions under forward bias
Appl. Phys. Lett. 51, 2121 (1987)
125 J. Christen, D. Bimberg
Abbildung der atomaren Struktur von Halbleitergrenzflächen mittels
Kathodolumineszenz
Material und Struktur-Analyse 19, 4 (1988)
126 M. Grundmann, D. Bimberg
Anisotropy effects on excitonic properties in realistic quantum wells
Phys. Rev. B 38, 13486 (1988)
127 C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, N. Nouri
Anomalous exciton temperatures in GaAs/AlGaAs quantum wells
Inst. Phys. Conf. Ser. 96, 261 (1988)
128 A. Juhl, D. Bimberg
Calorimetric absorption and transmission spectroscopy for determination of quantum efficiencies and characterization of ultrathin layers and nonradiative centers
J. Appl. Phys. 64, 303 (1988)
129 S. Munnix, D. Bimberg
Carrier injection in semiconductor with position dependent band structure: electron-beam-induced-current at heterojunctions
J. Appl. Phys. 64, 2505 (1988)
130 J. Christen, D. Bimberg
Cathodoluminescence imaging of semiconductor interfaces
Jeol News 26E, 12 (1988)
131 T. Fukunaga, H. Nakashima, J. Christen, D. Bimberg
Characterization of heterointerfaces abruptness by luminescence method
Appl. Phys. (<st1:country-region w:st="on"><st1:place w:st="on">Japan</st1:place></st1:country-region>) 57, 45 (1988)
132 T. Wolf, R.K. Bauer, D. Bimberg, W. Schlaack
Deep donor level Ta in GaAs
Proc. 5th Conf. on Semi-Insulating III-V Materials, IOP Publishing Ltd., London, p. 391 (1988)
133 D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller
Direct imaging of the columnar structure of GaAs quantum wells
Superlattices and Microstructures 4, 257 (1988)
134 M. Krahl, J. Christen, D. Bimberg, G. Weimann, W. Schlapp
Effect of superlattices band structure on spontaneous emission lineshapes in GaAs multiple quantum wells
Inst. Phys. Conf., <st1:city w:st="on"><st1:place w:st="on">Bristol</st1:place></st1:city>, p. 441 (1988)
135 Z. Chen, W. Korb, T. Wolf, D. Bimberg
Electrical characteristics of and deep impurity levels in liquid phase epitaxial Fe-doped In0.53Ga0.47As
Proc. 5th Conf. on Semi-Insulating III-V Materials, IOP Publishing Ltd., London, p. 231 (1988)
136 R. Köhrbrück, S. Munnix, D. Bimberg, E.C. Larkins, J.S. Harris
Flux ratio dependence of growth rate, interface quality, and impurity incorporation in MBE grow AlGaAs/GaAs quantum wells
Inst. Phys. Conf. Ser. 96, 65 (1988)
137 E. Schöll, K. Ketterer, E.-H. Böttcher, D. Bimberg
Gain-switched semiconductor laser amplifier as an ultrafast dynamical optical gate
Appl. Phys. B 46, 69 (1988)
138 S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris
High carrier density in GaAs/AlGaAs modulation n-doped quantum wells: From one-to two-component plasma
Proc. 19th Intern. Conf. Phys. Semic., <st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region> (<st1:place w:st="on">W. Zawadzki</st1:place> ed.), PAS, p. 147 (1988)
139 M. Krahl, J. Christen, D. Bimberg, G. Weimann, W. Schlapp
Influence of coupling of wells on spontaneous emission lineshape in GaAs/GaAlAs multiple quantum wells
Appl. Phys. Lett. 52, 798 (1988)
140 D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller
Influence of interrupted growth on the luminescence properties of quantum wells
Proc. SPIE Intern. Symp., <st1:place w:st="on"><st1:city w:st="on">Cannes</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> 861, 110 (1988)
141 M. Engel, D. Grützmacher, R.K. Bauer, D. Bimberg, H. Jürgensen
Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE
J. Chryst. Growth 93, 359 (1988)
142 P. Lefevre, B. Gil, J.P. Lascavay, H. Mathieu, D. Bimberg, T. Fukunaga und H. Nakashima
Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum wells grown by molecular beam epitaxy
Phys. Rev. B 37, 4171 (1988)
143 Z. Chen, T. Wolf, W. Korb, D. Bimberg
Optical and electrical characterization of high resistivity liquid phase expitaxial In0.53Ga0.47As:Fe
J. Appl. Phys. 64, 4574 (1988)
144 K. Ketterer, E.-H. Böttcher, D. Bimberg
Picosecond spectra of gain switched AlGaAs/GaAs multiple quantum well lasers
Appl. Phys. Lett. 53, 2263 (1988)
145 J. Christen, D. Bimberg
The interface as a design tool for modelling of optical and electronic properties of quantum well devices
NATO ASI Series, <st1:place w:st="on"><st1:city w:st="on">Pisa</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place> (1988)
146 E.H. Böttcher, K. Ketterer, D. Bimberg
Turn-on delay time fluctuations in gain-switched AlGaAs/GaAs multiple quantum well lasers
J. Appl. Phys. 63, 2469 (1988)
147 D. Bimberg, Z. Chen, W. Korb, T. Wolf
Validity test of the vacuum referred binding energy model: The Fe2+/Fe3+ energy positions in InGaAs/InP
Proc. 19th Intern. Conf. Phys. Semic., <st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region> (<st1:place w:st="on">W. Zawadzki</st1:place> ed.), PAS, p. 541 (1988)
148 J. Christen, D. Bimberg, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller
Visualization and theorectical modelling of the atomistic structure of semiconductor quantum well interfaces
Springer Series in Solid State Sciences, H.J. Queisser and K. von Klitzing, eds., Berlin, p. 176 (1988)
149 M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells
Appl. Phys. Lett. 55, 1765 (1989)
150 E.-H. Böttcher, D. Bimberg
Assessment of pulse-to-pulse timing jitter in periodically gain-switched semiconductor lasers
Proc. ESSDERC 89 (A. Heuberger et al. eds., Springer Verlag , p. 377 (1989)
151 A. Nakashima, T. Fukunaga, J. Christen, D. Bimberg
Cathodoluminescence observation of GaAs/AlGaAs heterointerfaces
J. Surf. Science Soc. of <st1:country-region w:st="on"><st1:place w:st="on">Japan</st1:place></st1:country-region> 10, 81 (1989)
152 M. Krahl, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller
Coupling induced enhancement of interface recombination in GaAs multiple quantum well structures
Proc. ESSDERC 89 (A. Heuberger et al. eds) Springer Verlag, p. 499 (1989)
153 D. Bimberg, D. Oertel, R. Hull, G.A. Reid, K.W. Carey
Detailed atomic-scale structure of AlInAs/GaInAs quantum wells
J. Appl. Phys. 65, 2688 (1989)
154 E.-H. Böttcher, D. Bimberg
Detection of pulse to pulse timing jitter in periodically gain-switched semiconductor lasers
Appl. Phys. Lett. 54, 1971 (1989)
155 J. Christen, M. Grundmann, D. Bimberg
Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of emiconductor heterointerfaces
Appl. Surface Science 41/42, 329 (1989)
156 M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dislocation induced anisotropies of the structural and optical properties of pseudomorphic In0.23Ga0.77As quantum wells
Inst. Phys. Conf. Ser. 106, 453 (1989)
157 Z. Chen, W. Korb, R.K. Bauer, D. Bimberg
First observation of a titanium midgap donor level in In0.53Ga0.47As p-n-diodes
Appl. Phys. Lett. 55, 645 (1989)
158 D. Bimberg
Gain-switching of semiconductor lasers: Picosecond optical gates and light pulses
Europhys. Conf. Abstr. 13 D, I 6 (1989)
159 S. Munnix, R.K. Bauer, D. Bimberg, J.S. Harris, R. Köhrbrück, W.C. Larkins, C. Maierhofer, D.E. Mars, J.N. Miller
Growth kinectics, impurity incorporation, defect generation and interface qualitiy of MBE grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes
J. Vac. Sci. and Technol. 7, 704 (1989)
160 D. Oertel, D. Bimberg, R. Bauer, K.W. Carey
High precision band gap determination of Al0.48In0.52As with optical and structural methods
Appl. Phys. Lett. 55, 140 (1989)
161 C. Maierhofer, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller
Impact of MBE-growth rate on optical properties of GaAs quantum wells
Superlattices and microstructures 5, 2 (1989)
162 M. Krahl, J. Christen, D. Bimberg, D. Mars, J. Miller
Impact of well coupling on the spontaneous emission properties of GaAs/AlGaAs multiple-quantum-well structures
IEEE J. Quantum Electron. 25, 2281 (1989)
163 R. Köhrbrück, S. Munnix, D. Bimberg, E.C. Larkins, J.S. Harris
Influence of the As: Ga flux ratio on growth rate, interface quality and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy
Appl. Phys. Lett. 54, 623 (1989)
164 J. Christen, D. Bimberg
Lateral mapping of atomic scale interface morphology and dislocation in quantum wells by cathodoluminescence imaging
Revue de Phys. Appliquée 24, C6-85 (1989)
165 C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, N. Nouri
Localization-dependent thermalization of excitons in GaAs/AlxGa1-xAs quantum wells
Phys. Rev. B 39, 3419 (1989)
166 M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull
Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons
J. Appl. Phys. 66, 2214 (1989)
167 H.P. Meier, E.van Gieson, P.W. Epperlein, C. Harder, W. Walter, M.Krahl, D. Bimberg
Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates
Appl. Phys. Lett. 54, 433 (1989)
168 S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris
Observation of a many-body edge singularity in the luminescence spectra of GaAs/AlGaAs modulation doped heterostructures
acta physica polonica A 75, 33 (1989)
169 D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller
Optical images of the atomic scale structure and of monolayer islands at GaAs/AlGaAs interfaces
acta physica polonica A 75, 5 (1989)
170 S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris
Optical properties of one- and two-component plasma in GaAs/AlGaAs
n-modulation doped heterostructures
Superlattices and Microstructures 6, 369 (1989)
171 C. Maierhofer, S. Munnix, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller
Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in MBE
Appl. Phys. Lett. 55, 50 (1989)
172 A. Weber, E.-H. Böttcher, D. Bimberg
Substructure in short optical pulses from gain-switched semiconductor lasers
Appl. Phys. Lett. 55, 1600 (1989)
173 H.P. Meier, E.van Gieson, P.W. Epperlein, C. Harder, W. Walter, M. Krahl, D. Bimberg
Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
J. Crystal Growth 95, 66 (1989)
174 M. Schell, A.G. Weber, D. Bimberg
Analytical and numerical treatment of sub-ps pulse generation by active mode locking
Conf. Digest 12th Intern. Semiconductor Laser Conf. 9-14 Sept, 226 (1990)
175 R. Zimmermann, E.-H. Böttcher, N. Kirstaedter, D. Bimberg
A survey of Band-Gap renormalization in quantum well structures
Superlatt. and Microstr. 7, 433 (1990)
176 E.-H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier
Band-Gap renormalization in undoped GaAs/AlGaAs quantum wells determined by a non-spectroscopy method
Proc. 20th Intern. Conf. on the Physics of Semic., <st1:place w:st="on"><st1:city w:st="on">Thessaloniki</st1:city>, <st1:country-region w:st="on">Greece</st1:country-region></st1:place>. E.M. Anastassakis, J.D. Joannopoulos, eds., World Scientific <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 592 (1990)
177 M. Grundmann, J. Christen, D. Bimberg
Cathodoluminescence imaging of defects at semiconductor surfaces and interfaces "Defect control in semiconductors" (K. Sumino, ed.) North-Holland, <st1:city w:st="on"><st1:place w:st="on">Amsterdam</st1:place></st1:city>
p. 1203 (1990)
178 M. Krahl, J. Christen, D. Bimberg
Coupling induced enhancement of nonradiative and suppression of radiative recombination in superlattices
J. Luminescence 45, 176 (1990)
179 H. Scheffler, W. Korb, D. Bimberg, H. Ulrici
Deep Ti-donor in GaAs
Appl. Phys. Lett. 57, 1318 (1990)
180 M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Dependence of structural and optical properties of InGaAs/GaAs quantum wells on misfit dislocations
J. Vac Sci Technol. B 8, 751 (1990)
181 J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Direct imaging of lateral bandgap variation in MOCVD grown GaAs on V-grooved Si
Proc. 20th Intern. Conf. on the Physics of Semic., <st1:place w:st="on"><st1:city w:st="on">Thessaloniki</st1:city>, <st1:country-region w:st="on">Greece</st1:country-region></st1:place>. E.M. Anastassakis, J.D. Joannopoulos, eds., World Scientific <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 272 (1990)
182 M. Krahl, D. Bimberg, R.K. Bauer, D.E. Mars,.J.N. Miller
Enhancement of nonradiative interface recombination in GaAs coupled quantum wells
J. Appl. Phys. 67, 434 (1990)
183 A.G. Weber, Wu Ronghan, D. Bimberg
High frequency response of p-substrate buried crescent InGaAsP lasers
J. Appl. Phys. 68, 2499 (1990)
184 D. Kuhl, F. Hieroniymi, E.H. Böttcher, D. Bimberg
High-speed metal semiconductor-metal photodetectors on InP: Fe
IEEE Photon. Techn. Lett. 2, 574 (1990)
185 D.B. Tran Thoai, R. Zimmermann, M. Grundmann, D. Bimberg
Image charges in semiconductor quantum wells: effect on exciton binding energy
Phys. Rev. B 42, 5906 (1990)
186 R. Köhrbrück, S. Munnix, D, Bimberg
Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/Ga quantum wells
J. Vac. Sci. Technol B 8, 798 (1990)
187 R. Köhrbrück, S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller
Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by MBE
Appl. Phys. Lett. 57, 1025 (1990)
188 C.J. Wei, D. Kuhl, E.-H. Böttcher, D. Bimberg, E. Kuphal
Lateral high speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs
IEEE Electron Dev. Lett. 11, 334 (1990)
189 D. Kuhl, C.J. Wei, E.-H. Böttcher, D. Bimberg, E.Kuphal
Lateral high speed photodiodes on semiinsulating InGaAs
Springer Proc. in Phys. 49, 104 (1990)
190 J. Christen, D. Bimberg
Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening and momentum conservation
Phys. Rev. B 42, 7213 (1990)
191 M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Monoclinic crystal symmetry in partially relaxed pseudomorphic quantum wells: impact on valence band structure and optical anisotropy
Proc. 20th Intern. Conf. Phys. Semic., World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 165 (1990)
192 M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Correlation of anisotropic lattice relaxation and degradation of optical properties
Springer Series of <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Sciences 97, 304 (1990)
193 M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller
Recombination dynamics in pseudomorphic and partially relaxed
In0.23Ga0.77As/GaAs quantum wells
<st1:country-region w:st="on"><st1:place w:st="on">Great Britain</st1:place></st1:country-region> B 41, 10120 (1990)
194 T. Wolf, A. Krost, F. Reier, P. Harde, D. Kuhl, F. Hieronymi, H. Ullrich, D. Bimberg, H. Schumann
Semiinsulating Fe- and Ti-doped InP and InGaAs for ultrafast infrared detectors grown by LP-MOCVD
Proc. Intern. Conf. on Semiinsulating Materials, <st1:city w:st="on"><st1:place w:st="on">Toronto</st1:place></st1:city> 1990, IOP Publ. Lim. London, p. 131 (1990)
195 A. Weber, E.-H. Böttcher, D. Bimberg
Substructure in ps light pulses emitted by gain-switched semiconductor lasers
Springer Proc. in Phys. 49, 51 (1990)
196 D. Kuhl, F. Hieronymi, E.-H. Böttcher, T. Wolf, A. Krost, D. Bimberg
Very high speed MSM InGaAs:Fe photodetectors with InP: Fe barrier enhancement layer grown by LP-MOCVD
Electr. Lett. 26, 2107 (1990)
197 J. Christen, M. Krahl, D. Bimberg
Visualization of the transition from 2D to 3D and from Non-k-conservation to k-conservation in the lineshapes of quantum wells and true superlattices
Superlattices and Microstructures 7, 1 (1990)
198 D. Bimberg, T. Wolf, J. Böhrer
4He and 3He caloriometric absorption spectroscopy: Principles and results on InGaAs/InAlAs quantum wells and Fe in InP and GaAs
Advances in Nonradiative Processes in Solids; B. di Bartolo Editor, Plenum Press, <st1:state w:st="on">New York</st1:state> + <st1:city w:st="on"><st1:place w:st="on">London</st1:place></st1:city>, p. 561 (1991)
199 S. Haacke, R. Zimmermann, D. Bimberg, D.E. Mars, J.N. Miller
A Study of Band Gap renormalization in n-type and p-type modulation doped GaAs quantum wells
Superlattices and Microstructures 9, 27 (1991)
200 M. Grundmann, A. Krost, D. Bimberg
Antiphase-domain-free InP on Si(001): optimization of MOCVD process
J. Cryst. Growth 115, 150 (1991)
201 J. Christen, M. Grundmann, D. Bimberg, K. Streubel, F. Scholz und U. Morlock
Atomical morphology of ternary/binary semiconductor heterointerfaces: A comparison of InGaAs/InP and AlGaAs/GaAs grown by MOVPE, MBE and LPE
MBE and LPE Workshop on Optical Properties of Mesocopic Semiconductor Structures, <st1:place w:st="on"><st1:city w:st="on">Snowbird</st1:city>, <st1:state w:st="on">Utah</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1991)
202 A. Krost, J. Böhrer, M. Grundmann, T. Wolf, D. Bimberg
Atomically abrupt InGaAs/InP quantum well heterointerfaces of macroscopic dimension grown by LP-MOCVD
Proc. EWMOVPE IV, Nijmegen, Netherlands 34 (1991)
203 M. Grundmann, J. Christen, D. Bimberg
Cathodoluminescence of strained quantum wells and layers
Superlattices and Microstructures 9, 65 (1991)
204 D. Bimberg, M. Grundmann, J. Christen
Characterization of strained heterostructures by cathodoluminescence
Am. Vac. Soc. Ser. 10, P.H. Holloway (ed.), Conf. Proc. 227, 68 (1991)
205 M. Krahl, N. Kirstaedter, R.K. Bauer, D. Bimberg, H.P. Meier, C. Harder
Correlation of time-resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier width
J. Appl. Phys. 70, 5561 (1991)
206 I. Rechenberg, S. Stoeff, M. Krahl, D. Bimberg, A. Hoepner
Defect free growth of AlxGa1-xAs by liquid phase epitaxy on V-grooved (001) GaAs substrates
J. Appl. Phys. 69, 8154 (1991)
207 J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, H. Ishikawa, M. Kamada, N. Watanabe
Determination of the band discontinuity of MOCVD grown In1-xGaxAs/In1-yAlyAs heterostructures with optical and structural methods
J. Chryst. Growth 107, 555 (1991)
208 K. Streubel, F. Scholz, V. Harle, M. Bode, M. Grundmann, M. Christen, D. Bimberg
Determination of the interface structure of very thin GaInAs/InP quantum wells
Proc. 3rd Intern. Conf. Indium Phosphide and Rel. Mat., IEEE, <st1:city w:st="on"><st1:place w:st="on">Cardiff</st1:place></st1:city>, GB, p. 468 (1991)
209 M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe
Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si-substrates
Appl. Phys. Lett. 58, 2090 (1991)
210 T. Wolf, D. Bimberg, H. Ulrici
Excitonic fine structure in the charge transfer spectra of GaP:Fe
Phys. Rev. B 26, 1074 (1991)
211 M. Schell, A.G. Weber, E. Schöll, D. Bimberg
Fundamental limits of sub-ps pulse generation by active modelocking of semiconductor Lasers: The spectral gain width and the facet reflectivities
IEEE J. Quant. Electr. 27, 1661 (1991)
212 M.A. Herman, D. Bimberg, J. Christen
Heterointerfaces in quantum wells and epitaxial growth process: Evaluation by luminescent techniques
J. Appl. Phys. 70, R1 (1991)
213 N. Kirstaedter, E.H. Böttcher, D. Bimberg, C. Harder, H.P. Meier
High injection effects in GaAs/AlGaAs quantum wells: Spontaneous recombination and band-gap renormalization
Granular Nanoelectronics (ed. D.K. Ferry), NATO ASI Series, Series B, Physics Vol. 251, p. 499 (1991)
214 D. Kuhl, F. Hieronymi, E.H. Böttcher, T. Wolf, D. Bimberg, J. Kuhl, M. Klingenstein
Impulse response of InGaAs metal-semiconductor-metal photodetector
Proc. ECOC/IOOC `91, <st1:place w:st="on"><st1:city w:st="on">Paris</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> p. 257 (1991)
215 M. Grundmann, A. Krost, D. Bimberg
Low-temperature metalorganic chemical vapor deposition of InP on Si(001)
Appl. Phys. Lett. 58, 284 (1991)
216 M. Grundmann, A. Krost, D. Bimberg
LP-MOVPE growth of antiphase domain free InP on (001) Si using low temperature processing
J. Crystal Growth 107, 494 (1991)
217 D. Bimberg (editor and author) W. Amende, E.W. Kreutz, P. Seiler, H.-G. Treusch
Materialbearbeitung mit Lasern
expert Verlag, Ethningen (1991)
218 U. Morlock, J. Christen, D. Bimberg, E. Bauser, H.J. Queisser, A. Ourmazd
Morphology of GaAs quantum well interfaces grown by liquid-phase epitaxy
Phys. Rev. B 44, 8792 (1991)
219 M. Grundmann, A. Krost, D. Bimberg
Observation of the first order phase transition from single to double stepped Si (001) in MOCVD of InP on Si
J. Vac. Sci. Technol. B 9, 2158 (1991)
220 H. Ullrich, A. Knecht, D. Bimberg, H. Kräutle, W. Schlaak
Redistribution of Fe and Ti implanted into InP
J. of Appl. Phys. 70, 2604 (1991)
221 J. Christen, M. Grundmann, D. Bimberg
Scanning cathodoluminescence microscopy: A unique approach for atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities
J. Vac. Sci. Technol. B 9, 2358 (1991)
222 M. Schell, A.G. Weber, E.H. Böttcher, E. Schöll, D. Bimberg
Theory of subpicosecond pulse generation by achive modelocking of a semiconductor laser amplifier in an external cavity: Limits for the pulsewidth
IEEE J. Quant. Electr. 27, 402 (1991)
223 T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld, H. Schumann
Transition metal doping of LP-MOCVD-grown InP
J. Chryst. Growth 107, 381 (1991)
224 D. Bimberg
Ultrakurze optische Pulse mit Halbleiterlasern
Buchbeitrag zu: Halbleiter in Forschung und Technik, expert verlag, Ethningen (1991)
225 J. Christen, E. Kapon, M. Grundmann, D.M. Hwang, M. Joschko, D. Bimberg
1D charge carrier dynamics in GaAs quantum wires: carrier capture, relaxation and recombination
Physica Status Solidi B 173, 307 (1992)
226 M. Schell, D. Huhse, A.G. Weber, G. Fischbeck, D. Bimberg, D.S. Tarasov, A. V. Gorbachov, D.Z. Garbuzov
20 nm Wavelength tunable singlemode picosecond pulse generation at 1.3 mm by self-seeded gain switched semiconductor laser
Electronics Letters 28, 2154 (1992)
227 N. Baber, H. Scheffler, H. Ullrich, T. Wolf, D. Bimberg
A simple technique for simultaneous fabrication of p+/n-diodes and ohmic contacts on n-type InP
J. Appl. Phys. 71, 5699 (1992)
228 T. Wolf, D. Bimberg, G. Hirt, D. Hofmann, G. Müller
A spectroscopic investigation of nominally undoped semi-insulating InP prepared by high-temperature annealing
Proc. 4th Intern. Conf. in Indium Phosphide and Related Materials, Newport, RI, SPIE, p. 561 (1992)
229 D. Bimberg, F. Heinrichsdorff, R.K. Bauer, D. Gerthsen, D. Stenkamp, D.E. Mars, J.N. Miller
Binary AlAs/GaAs versus ternary BaAlAs/GaAs interfaces: A dramatic difference of perfection
J. Vac. Sci. Technol. B 10, 1793 (1992)
230 J. Çhristen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg
Cathodoluminescence in microporous silicon
Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 464 (1992)
231 J. Christen, E. Kapon, E. Coles, D.M.H.Wang, L.M. Schiavone, M. Grundmann, D. Bimberg
Cathodoluminescence investigation of lateral confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates
Surf. Sci. 267, 257 (1992)
232 M. Grundmann, A. Krost, D. Bimberg
Crystallographic and optical properties of InP/Si grown by low temperature MOCVD process
Appl. Surf. Sci. 267, 47 (1992)
233 H. Scheffler, N. Baber, T. Wolf, A. Knecht, D. Bimberg, J. Winterfeld, H. Schumann
Deep ZR- and HF-related levels in InP
Proc. EPS, Prag (1992)
234 H. Ullrich, A. Knecht, D. Bimberg, H. Kräutle, W. Schlaak
Defect-induced redistribution of Fe- or Ti-implanted and annealed GaAs, InAs, GaP, and InP
J. Appl. Phys. 72, 3514 (1992)
235 S. Haacke, R. Zimmermann, D. Bimberg, D.E. Mars, J.N. Miller und E. Kalt
Fermi enhancement and Band Gap renormalization of AlxGa1-xAs/GaAs modulation doped quantum wells
Phys. Rev. B 45, 1736 (1992)
236 N. Baber, H. Scheffler, A. Ostmann, T. Wolf, D. Bimberg
Field-effect on electron emission from the deep Ti donor level in InP
Phys. Rev. B 45, 4043 (1992)
237 A. Weber, M. Schell, G. Fischbeck, D. Bimberg
Generation of single femtosecond pulses by hybrid modelocking of a semiconductor laser
IEEE J. Quant. Electr. QE-28, 2343 (1992)
238 F. Hieronymi, D. Kuhl, E.H. Böttcher, E. Dröge, T. Wolf, D. Bimberg
High-performance SIM photodetectors on semiinsulating InP: Fe/InGaAs:Fe/InP: Fe
Proc. 4th Intern. Conf. on Indium Phosphide and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Newport</st1:city>, <st1:state w:st="on">RI</st1:state></st1:place>, SPIE, p. 561 (1992)
239 L. Podlowski, T. Wolf, R. Heitz, A. Hoffmann, W. Ulrici, D. Bimberg, I. Broser
Hot lines at mK temperatures: 3He/4He Calorimetric absorption Spectra of the Fe3+ ->Fe2+ charge transfer transitions in GaP
Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 505 (1992)
240 J. Böhrer, A. Krost, D. Bimberg
InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
Appl. Phys. Lett. 60, 2258 (1992)
241 R.F. Schnabel, R. Zimmermann, D. Bimberg, H. Nickel, R. Lösch, W. Schlapp
Influence of exciton localization on recombination line shapes: InGaAs/GaAs quantum wells as a model
Phys. Rev. B 46, 9873 (1992)
242 D. Kuhl, F. Hieronymi, E.-H. Böttcher, T. Wolf, D. Bimberg
Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors
IEEE J. Lightwave Techn. 10, 753 (1992)
243 M. Grundmann, A. Krost, D. Bimberg, H. Cerva
InGaAs/InP quantum wells on vicinal Si (001): Structural and optical properties
J. Vac. Sci. Technol. B 10, 1840 (1992)
244 A. Krost, M. Grundmann, D. Bimberg, H. Cerva
InP on patterned Si(001): Defect reduction by application of the necking mechanism
J. Crystal Growth, 124 (1992)
245 J. Christen, E. Kapon, M. Grundmann, M. Walther, R.K. Bauer, D. Bimberg
Kinetics of relaxation and recombination of quasi-1-dimensional charge carriers in ultra small GaAs/AlGaAs quantum wires
Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 41 (1992)
246 M. Grundmann, A. Krost, D. Bimberg
Local Epitaxy of InP on V-grooved Si (001): Complete annihilation domains on narrow stripes
Proc. Sixth Intern. Conf. of Metalorganic Vapor Phase Epitaxy, June 8-11, p. 17 (1992)
247 M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann
Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of optical properties
Appl. Phys. Lett. 60, 3292 (1992)
248 A.G. Weber, Wu Ronghan, E.H. Böttcher, M. Schell, D. Bimberg
Measurement and simulation of the turn-on delay time jitter in gain-switched semiconductor lasers
IEEE J. Quantum Electron. 28, 441 (1992)
249 E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, D. Bimberg
Modelling and characterization of ultra-high-speed InGaAs MSM photodetectors
Proc. ECOC/IOOC 92, <st1:state w:st="on"><st1:place w:st="on">Berlin</st1:place></st1:state> Part 1, p. 277 (1992)
250 E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier
Nonspectroscopic approach to the determination of the chemical potential and band-gap renormalization in quantum wells
Phys. Rev. B 45, 8535 (1992)
251 E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg
Optical properties of quantum wires grown on nonplanar substrates
in: Springer Series in Solid State Science, G. Bauer, F. Kuchar, H. Heinrich (eds.), Springer Verlag Berlin, p. 300 (1992)
252 E.Kapon, M. Walther, D.M. Hwang, E. Colar, J. Christen, M. Grundmann, D. Bimberg
Optical properties of semiconductor quantum wires grown on nonplanar substrates
Springerseries in Solid State Sciences, G. Bauer, F. Kuchar, H. Heinrich (eds.) Springer-Verlag, Berlin, p. 300 (1992)
253 E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg
Quantum wire heterostructures for optoelectronic applications
Superlatt. and Microstr. 12, 491 (1992)
254 M. Schell, A.G. Weber, D. Bimberg
Sub-Picosecond pulse generation at 1.3 µm by hybrid mode locking
Proc. 13th IEEE Intern. Semiconductor Laser Conf., 21-25 Sept, p. 248 (1992)
255 J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg
Temporal evolution of cathodoluminescence in nano-porous silicon
Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 246 (1992)
256 J. Christen, M. Grundmann, E. Kapon, E. Colas, D. M. Hwang, D. Bimberg
Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates
Appl. Phys. Lett. 61, 67 (1992)
257 J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg
Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates
Appl. Phys. Lett. 61, 67 (1992)
258 E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, T. Wolf, D. Bimberg
Ultrafast semiinsulating InP:Fe/InGaAs:Fe/InP:Fe MSM photodetectors: Modelling and performance
IEEE J. Quant. Electr. QE28, 2343 (1992)
259 J. Böhrer, A. Krost, T. Wolf, D. Bimberg
Band offsets and transitivity of InGaAs/InAlAs/InP heterostructures
Phys. Rev. B 47, 6439 (1993)
260 B. Gruska, H. Ullrich, R.K. Bauer, D. Bimberg, K. Wandel
Cap and capless annealing of Fe-implanted In GaAs
J. Appl. Phys. 73, 4825 (1993)
261 E.Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg
Carrier capture and stimulated emission in quantum wire lasers grown on nonplanar substrates
Phonons in Semiconductor Nanostructures J.P. Leburton et al., eds., Plenum Publishing Corp. Plenum Publishing Corp., p. 317 (1993)
262 D. Bimberg, J. Christen
Cathodoluminescence images of quantum wells and wires
Inst. Phys. Conf. Ser. 134, 629 (1993)
263 J. Böhrer, A. Krost, D. Bimberg
Composition dependence of band gap and type of line-up in In1-x-yGaxAlyAs/InP hetrostructures
Appl. Phys. Lett. 63, 1918 (1993)
264 L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, D. Bimberg
Control and characterization of ordering in GaInP
Appl. Phys. Lett. 62, 3496 (1993)
265 R.F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde
Epitaxy of high resistivity InP on Si
Appl. Phys. Lett. 63, 3607 (1993)
266 M. Schell, D. Huhse, D. Bimberg
Generation of 2.5 ps light pulses with 15 nm wavelength tunability at 1.3 µm by a self-seeded gain-switched semiconductor laser
IEEE Photon. Techn. Lett. 5, 1267 (1993)
267 M. Schell, D. Huhse, D. Bimberg
Generation of short (3.5 ps) low jitter (<100 fs) light pulses with a 1.55 µm tunable twin guide laser
Proc. 19th European Conf. on Optical Communication, <st1:place w:st="on"><st1:city w:st="on">Montreux</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, p. 229 (1993)
268 F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, D. Bimberg
High performance large area InGaAs metal-semiconductor-metal photodetectors
IEEE Photonics Techn. Lett. 5, 910 (1993)
269 H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg
Hole capture cross section of the deep Ti donor level in InP
Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city>, p. 99 (1993)
270 M. Schell, A.G. Weber, D. Bimberg
Hybrid mode-locking of semiconductor lasers
Proc. IEEE Conf. on Lasers and Electro-Optics Soc., 6th Annual Meeting, <st1:city w:st="on"><st1:place w:st="on">San José</st1:place></st1:city>, p. 294 (1993)
271 T. Wolf, D. Drews, H. Scheffler, D. Bimberg, F. Mosel, P. Kupfer, G. Müller
Identification of deep levels in liquid-uncapsulated Czochralski-grown Fe- and Zn- doped InP: A proof of the nonexistence of a Fe4+/Fe3+
J. Appl. Phys. 73, 226 (1993)
272 Z. Chen, D. Bimberg
Influence of phase separation on electron mobility in high-purity GaxIn1-xAsyP1-y(0<y<1)
Appl. Phys. Lett. 63, 211 (1993)
273 A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg
InP grown on Si (III): A new approach for an order of magnitude improvement of layer quality
EW-MOCVPE V, Malmö, Sweden B 7 (1993)
274 R. Zimmermann, D. Bimberg
Interface excitons in staggered line-up quantum wells: The AlAs/GaAs case
Phys. Rev. B 47, 15789 (1993)
275 R. Zimmermann, D. Bimberg
Interface excitons in type-two quantum structures
J. de Physique IV/C5 IV, 261 (1993)
276 A. Knecht, M. Kuttler, H. Scheffler, T. Wolf, D. Bimberg, H. Kräutle
Ion implantation of Zr and Hf in InP and GaAs
Nucl. Instrum. and Methods in Physics Research B 80/81, 683 (1993)
277 F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, D. Bimberg
Large area InGaAs MSM photodetectors
Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city>, p. 627 (1993)
278 J. Böhrer, A. Krost, D. Bimberg
Localized electrons and holes at the staggered band line-up interface of InAlAs/InP
Proc. EW-MOVPE V, <st1:place w:st="on"><st1:city w:st="on">Malmö</st1:city>, <st1:country-region w:st="on">Sweden</st1:country-region></st1:place> D5 (1993)
279 D. Bimberg (editor and author), M.-A. Beeck, J. Engelsberger, H. Steinbichler, H.J. Tiziani, C. Tropea
Meßtechniken mit Lasern
expert Verlag (1993)
280 S. Tomiya, C.M. Reaves, M. Krishnamurty, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. Den Baars
Pholuminescence studies of a quantum well modulated by facetting on GaAs (110) surfaces
Mat. Res. Soc. Symp. Proc. 312, 279 (1993)
281 D. Bimberg, B. Srocka, P.K. Bhattacharya, J. Shah
Properties of lattice-matched and strained Indium Gallium Arsenide
P.K. Bhattacharya, ed., <st1:city w:st="on"><st1:place w:st="on">London</st1:place></st1:city>, GB, p. 157 (1993)
282 Y.L. Chang, I-H. Tan, Y.H. Zahng, D. Bimberg, J. Merz, E. Hu
Reduced quantum efficiency of a near-surface quantum well
J. Appl. Phys. 74, 5144 (1993)
283 H. Scheffler, B. Srocka, A. Dadgar, M. Kuttler, A. Knecht, R. Heitz, D. Bimberg, J.Y. Hyeon, H. Schumann
Rh: a dopant with mid gap levels in InP and InGaAs and superior thermal stability
Mat. Res. Soc. Symp. Proc. 316, 151 (1993)
284 T. Wolf, T. Zinke, A. Krost, D. Bimberg
Semi-insulating InP codoped with Fe and Ti: An effective means to suppress the interdiffusion of Fe and p-type dopants
Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city> (1993)
285 R.F. Schnabel, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Grundmann, T. Wolf, K. Schatke, M. Pilatzek, P. Harde
Semi-insulating InP:Fe grown on Si
Proc. 5th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Paris</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1993)
286 H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg
Simultaenous planarized selective-area epitaxy of GaxIn1-xAs in normal and dove-tail etched grooves
Mat. Res. Soc. Symp. 316, 151 (1993)
287 J. Böhrer, A. Krost, D. Bimberg
Spatially indirect intersubband transitions of localized electrons and holes at the staggered band lineup In0.52Al0.48As/InP interface
J. Vac. Sci. Technol. B 11, 1642 (1993)
288 J. Böhrer, A. Krost, D. Bimberg
Spatially indirect transitions at the staggered band line-up InAlAs/InP interface
Europhys. Conf. Abstr. 17 A, 1656 (1993)
289 E.H. Böttcher, F. Hieronymi, D. Kuhl, E. Dröge, D. Bimberg
Transient response of lateral photodetectors
Appl. Phys. Lett. 62, 18 (1993)
290 J. Böhrer, A. Krost, D. Bimberg, M. Helm, G. Bauer
Two-dimensional electron and hole states at the staggered band line-up interface of InAlAs/InP
Appl. Phys. Lett. 63, 2955 (1993)
291 F.Z.Xie, D. Kuhl, E.H. Böttcher, S.Y. Ren, D. Bimberg
Wide-band frequency response measurements of photodetectors using low-level photocurrent noise detection
J. Appl. Phys. 73, 8641 (1993)
292 M. Schell, D. Bimberg, V.A. Bogatyrjov, E.M. Dianov, A.S. Kurkov, V.A. Semenov, A.A. Sysoliatin
540 fs light pulses at 1.5 mm with variable repetition rate using a tuneable twin guide laser and solition compression in a dispersion decreasing fiber
Techn. Photon. Lett. 6, 1191 (1994)
293 M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon
Bandgap renormalization in quantum wires
Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1675 (1994)
294 J. Böhrer, A. Krost, D. Bimberg
Carrier dynamics in staggered band line-up n-InAlAs/InP heterostructures
Appl. Phys. Lett. 64, 1992 (1994)
295 A. Krost, N. Esser, H. Selber, J. Christen, D. Bimberg, W. Richter, L.C. Su, G.B. Stringfellow
Characterisation of ordered and disordered Ga0.51In0.49P domains by Micro-Raman spectroscopy
J. Cryst. Growth 145, 171 (1994)
296 L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, D. Bimberg
Control of ordering in GaInP and effect on bandgap energy
J. Electr. Mat. 23, 125 (1994)
297 J. Christen, M. Grundmann, M. Joschko, D. Bimberg, E. Kapon
Cooling of 1-dimensional carriers via inter- and Intra-subband relaxation in GaAs quantum wires
Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1759 (1994)
298 R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva
Defect reduction and strain relaxation mechanismus in InP grown on patterned Si (001)
Proc. 6th Intern. Conf. on InP and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 640 (1994)
299 M. Kuttler, A. Knecht, D. Bimberg, H. Kräutle
Diffusion of ion implanted Ruthenium and Osmium in GaAs and InP
Mat. Res. Soc. Symp. Proc. 316, 179 (1994)
300 D. Bimberg, A. Dadgar, R. Heitz, M. Kuttler, A. Näser, H. Scheffler, B. Srocka
Evidence for Rh2+/3+ deep acceptro levels in InP and In0.53Ga0.47As
Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 2387 (1994)
301 T. Wolf, T. Zinke, A. Krost, H. Scheffler, H. Ullrich, D. Bimberg, P. Harde
Fe- and Ti-doping of InP grown by MOCVD for the fabrication of thermally stable high resistivity layers
J. Appl. Phys. 75, 3870 (1994)
302 B. Srocka, H. Scheffler, D. Bimberg
Fe2+-Fe3+ level as a recombination center in In0.53Ga0.47As
Phys. Rev. B 49, 10259 (1994)
303 L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, W. Ulrici
Fine structure of the (Fe2+(5E), h) bound states in GaP and InP
Mat. Sci. For. 143-147, 311 (1994)
304 N. Kirstaedter, N.N. Ledentsov, M. Grundmann, M. Schell, D. Bimberg, V.M. Ustinov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, S.V. Ruvimov, U. Richter, P. Werner, J. Heydenreich
First observation of injection laser emission from InAs/GaAs quantum dots
14th IEEE Intern. Semicond. Laser Conf., PD2, <st1:state w:st="on"><st1:place w:st="on">Hawaii</st1:place></st1:state> (1994)
305 S. Kollakowski, U. Schade, E.H. Böttcher, D. Bimberg
Fully passivated AR coated InP/InGaAs MSM photodetectors
IEEE Photonics Technol. Lett. 6, 1324 (1994)
306 J. Yu, M. Schell, M. Schulze, D. Bimberg
Generation of 290 fs mulses at 1.3 mm by hybrid mode-locking of a semiconductor laser and optimization of the time-band-width
Appl. Phys. Lett. 65, 2395 (1994)
307 D. Huhse, M. Schell, J. Kaessner, D. Bimberg, I.S. Turasov, A.V. Gorbachov, D.Z. Garbuzov
Generation of electrically wavelength tunable (Dl = 40 nm) singlemode laser pulses from a 1,3 mm Fabry-Perot laser by self-seeding in a fiber-optic configuration
Electron. Lett. 30, 157 (1994)
308 D. Huhse, M. Schell, W. Utz, J. Kaessner, D. Bimberg
Generation of low jitter (210 fs) single mode pulses from a 1,3 mm Fabry-Perot-laser diode by self-seeding
Proc. 20th European Conference on Optical Communication (ECOC), <st1:place w:st="on"><st1:city w:st="on">Firenze</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 467 (1994)
309 R. F. Schnabel, M. Grundmann, R. Engelhardt, D. Bimberg, H. Cerva
High quantum efficiency InP-mesas grown by LPE on InP/Si
Proc. 6th Intern. Conf. on InP and Related Mat., <st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on"><st1:place w:st="on">USA</st1:place></st1:country-region> PDB2 (1994)
310 E. Dröge, R.F. Schnabel, E.H. Böttcher, M. Grundmann, A. Krost, D. Bimberg
High-speed InGaAs on Si metal-semiconductor-metal photodetectors
Electr. Lett. 30, 1348 (1994)
311 A. Krost, N. Esser, H. Selber, J. Christen, W. Richter, D. Bimberg, L.C. Su, L.B. Stringfellow
Identification of ordered and disordered Ga0.51In0.49P domains by spatially resolved luminescence and Raman spectroscopy
J. Vac. Sci. Techn. B 12, 2558 (1994)
312 H. Scheffler, A. Dadgar, B. Srocka, M. Kuttler, D. Bimberg
Identification of the deep Ti donor level in InAlAs
Proc. 6th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 303 (1994)
313 U. Schade, S. Kollakowski, E.H. Böttcher, D. Bimberg
Improved performance of large-area InP/InGaAs MSM photodetectors by sulfur passivation
Appl. Phys. Lett. 64, 1389 (1994)
314 D. Bimberg, B. Srocka
Impurity levels in InGaAs properties of InGaAs
Properties of InGaAs, EMIS Data Review Series (P. Bhattacharya, ed.) (1994)
315 J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, I. Broser
Inequivalence of staggered interfaces in InAlAs/InP multiquantum well structures
Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 695 (1994)
316 J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg
InGaAs strained quantum wire structures: optical properties and laser applications
Jpn. J. Appl. Phys. S-I-6-1, 66 (1994)
317 A. Krost, F. Heinrichsdorff, D. Bimberg, H. Cerva
InP on Si(111): Accommodation of lattice mismatch and structural properties
Appl. Phys. Lett. 64, 769 (1994)
318 D. Bimberg, J. Böhrer, A. Krost
Large oscillator strength of spatially indirect e-h recombination at type II heterojunctions: The InAlAs/InP case
J. Vac. Sci. Technol. A12, 1039 (1994)
319 F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, S. Kollakowski, D. Bimberg
Large-area low-capacitance InP/InGaAs MSM photodetectors for high-speed operation under front and rear illumination
Electr. Lett. 30, 1247 (1994)
320 M. Schell, W. Utz, D. Huhse, J. Kaessner, D. Bimberg
Low Jitter single-mode-pulse generation by a self-seeded, gain-switched Fabry-Pérot semiconductor laser
Appl. Phys. Lett. 65, 3045 (1994)
321 N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop‘ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich
Low threshold, large To injection laser emission from (InGa)As quantum dots
Electr. Lett. 30, 1416 (1994)
322 N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg
Luminescence and structural properties of (In, Ga)As/GaAs quantum dots
Proc. 22nd Intern. Conf. Phys. Semic. <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1855 (1994)
323 T. Wolf, W. Ulrich, D. Côte, B. Clerjaud, D. Bimberg
New evidence for bound states in the charge transfer spectra of TM doped III-V-semiconductors
Mat. Sci. Forum 143-147, 317 (1994)
324 B. Srocka, H. Scheffler, D. Bimberg
Observation of Rhodium- and Iridium-related deep levels in In0.53Ga0.47As
Proc. 6th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 110 (1994)
325 A. Krost, F. Heinrichsdorff, R.F. Schnabel, K. Schatke, D. Bimberg, H. Cerva
Optical and crystallographic properties of high perfection InP grown on Si(111)
J. Electr. Mat. 23, 135 (1994)
326 P.C. van Son, J. Cere, M.S. Sherwin, S.J. Allen jr., M. Sundaram, I.-H. Tan, D. Bimberg
Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures
Nuclear Instruments & Methods in Physics Research A 341, 174 (1994)
327 D. Bimberg, B. Srocka
Photoluminescence of pure InGaAs-Alloys
Properties of InGaAs, EMIS Data Review Series (P. Bhattacharya, ed.) (1994)
328 M. Schell, D. Huhse, D. Bimberg
Picosecond pulse generation with a 1.55 mm tunable guide laser using blue-chirp compression
Appl. Phys. Lett. 64, 1923 (1994)
329 M. Grundmann, O. Stier, J. Christen, D. Bimberg
Pseudomorphic quantum wires: symmetry breaking due to structural, strain and piezoelectric field induced confinement
Superlatt. Microstr. 16, 249 (1994)
330 M. Grundmann, J. Christen, V. Tuerck, E. Kapon, R. Bhat, C. Caneau, D.M. Hwang, D. Bimberg
Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates
<st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Electronics 37, 1097 (1994)
331 M. Grundmann, J. Christen, M. Joschko, O. Stier, D. Bimberg, E. Kapon
Recombination Kinetics and intersubband relaxation in semiconductor quantum wires
Semic. Sci. Technol. 9, 1939 (1994)
332 B. Srocka, H. Scheffler, D. Bimberg
Rhodium- and Iridium-related deep levels in In0.53Ga0.47As
Appl. Phys. Lett. 64, 2679 (1994)
333 J. Böhrer, A. Krost, D. Bimberg
Spatially indirect electronic transitions at the staggered band line-up InAlAs/InP interface
Proc. 4th Intern. Conf. on the Formation of Semic. Interfaces, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 660 (1994)
334 M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg
Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging
J. Electr. Mat. 23, 201 (1994)
335 M. Grundmann, V. Tuerck, J. Christen, R.F. Schnabel, O. Stier, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat
Strained InGaAs/GaAs quantum wires: Modelling and optical properties
Proc. 6th Intern. Conf. on InP and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 451 (1994)
336 D.Z. Garbuzov, V.P. Evtikhiev, N.I. Katsavets, A.B. Komissarov, T.E. Kudrik, I.V. Kudryashov, V.B. Khalfin, R.K. Bauer, ZHI. Alferov, D. Bimberg
Study of radiative recombination efficiency in MBW grown, 28-180 Å wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy
J. Appl. Phys. 75, 4152 (1994)
337 H. Hillmer, S. Hausmann, H. Burkhard, H. Walter, A. Krost, D. Bimberg
Study of wavelength shift in InGaAs/InAlGaAs QW DFB lasers based on laser parameters from a comparison of experiment and theory
IEEE J. Quant Electr. 30, 2251 (1994)
338 M. Grundmann, O. Stier, D. Bimberg
Symmetry breaking in pseudomorphic V-groove quantum wires
Phys. Rev. B 15, 14187 (1994)
339 M. Grundmann, A. Krost, D. Bimberg, H. Cerva
The formation of interfaces and crystal defects: A case study of InGaAs QWs on InP/Si (001)
Proc. ICFSI-4, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 530 (1994)
340 N.N. Ledentsov, F. Heinrichsdorff, M. Grundmann, D. Bimberg
Type II heterostructures based on GaSb sheets in GaAs matrix
Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1616 (1994)
341 D. Bimberg, E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, S. Kollakowski, U. Schade
Ultra-fast InP:Fe/InGaAs:Fe/InP:Fe MSM photodetectors
Halbleiter für die Optoelektronik und Photonik, A. Dörnen et al. (eds.), Verlag Hänsel-Hohenhausen, Egelsbach, p. 283 (1994)