TU Berlin

Workgroup Prof. Dr. D. Bimberg1967 - 1994

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1967 - 1994

In parts publications are listed on which Prof. Bimberg has worked outside of TU Berlin.
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D. Bimberg, W. Dultz, K. Fussgänger                    Symmetry assignment of the B-band in KI:T1+ Phys. Lett. 25A, 766 (1967)
2                 D. Bimberg, W. Dultz, W. Gebhardt                    Electron-lattice interaction with Eg and T2g modes in KC1:Tl+, KBr:T1+, KI:T1+ Color Centers in Alkali Halides, Intern. Symp., <st1:place w:st="on"><st1:city w:st="on">Rome</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 38 (1968)
3                 D. Bimberg, W. Dultz, K. Fussgänger, W. Gebhardt                    Electron-lattice interaction in the absorption spectra of Thallium-doped Alkali Halides                    Z. Physik 224, 364 (1969)
4                 D. Bimberg, W. Dultz, W. Gebhardt                    Stress-induced dichroism in T1+-doped potassium halides                    Phys. stat. sol. 31, 661 (1969)
5                 D. Bimberg, W. Schairer, M. Sondergeld, T.O. Yep                    Bound exciton luminescence in epitaxial Sn-doped GaAs                    J. of Luminescence 3, 175 (1970)
6                 D. Bimberg, M. Sondergeld, E. Grobe                    Thermal dissociation of excitons bound to neutral acceptors in high-purity GaAs                    Phys. Rev. B 4, 3451 (1971)
7                 D. Bimberg, W. Schairer                    Non-hydrogenic exciton and energy Gap of GaAs                    Phys. Rev. Lett. 28, 442 (1972)
8                 A. Engelhardt, D. Bimberg                    Osteotomie mit Laser                    Laser 4, 54 (1972)
9                 D. Bimberg, H.J. Queisser                    Radiative recombination of screened excitons                    Proc. of the 11th Intern. Conf. on the Phys. of Semic., <st1:place w:st="on"><st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region></st1:place>, p. 157 (1972)
10               D. Bimberg, F. Willmann, M. Blätte                    Zeeman effect of noncubic copper centers in epitaxial GaAs                    Proc. of the Intern. Conf. of Luminescence, <st1:place w:st="on"><st1:city w:st="on">Leningrad</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> (1972)
11               F. Willmann, W. Dreybrodt, M. Bettini und E. Bauser, D. Bimberg                    GaAs luminescence transitions to acceptors in magnetic fields                    Phys. stat. sol. (b) 60, 751 (1973)
12               F. Willmann, D. Bimberg, M. Blätte                    Optical properties of excitons bound to copper-complex centers in GaAs                    Phys. Rev. B 7, 2473 (1973)
13               D. Bimberg, W. Rühle                    Direct determination of the free electron mass and g-value in GaSb                    Proc. of the 12th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Stuttgart</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 561 (1974)
14               D. Bimberg, W. Rühle                    Optical observation of the magnetic freezeout effect in GaSb                    J. de Physique 35/4, C3-215 (1974)
15               D. Bimberg                    Radiative recombination of bound excitons in semiconducters with Td-symmetry in magnetic fileds                    Proc. of the Intern. Conf. on "The Application of High Magnetic Fields in Semiconductor Physics", <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 339 (1974)
16               D. Bimberg, K. Cho, W. Kottler                    Zeeman and diamagnetic effects of acceptors in III-V-compounds                    Proc. of the Intern. Colloque on "Physics in High Magnetic Fields", <st1:place w:st="on"><st1:city w:st="on">Grenoble</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, p. 339 (1974)
17               D. Bimberg, D.J. Robbins, D.R. Wight, J.P. Jeser                    CeP5014, A new ultrafast scintillator                    Appl. Phys. Lett. 27, 67 (1975)
18               W. Rühle, D. Bimberg                    Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb                    Phys. Rev. B 12, 2382 (1975)
19               K. Hess, D. Bimberg, N.O. Lipari, J.U. Fischbach und M. Altarelli                    Band parameter determination of III-V-compounds from high-field Magnetoreflectance of Excitons                    (1976)
20               D. Bimberg                    Bound holes in high magnetic fields                    Proc. of the 3rd Intern. Conf. on "The Application of High Magnetic Fields in Semiconductor Physics", p. 415 (1976)
21               H.L. Störmer, D. Bimberg                    Deformation of g-electron-hole drops in a magnetic field                    Comm. on Physics 1, 131 (1976)
22               P.J. Dean, D. Herbert, D. Bimberg, J. Choyke                    Donor exciton satellites in cubic silicon carbide: Multiple bound excitons revisited                    Phys. Rev. Lett. 37, 1635 (1976)
23               J.U. Fischbach, W. Rühle, D. Bimberg, E. Bauser                    Experimental determination of the anisotropy of the exciton wavefunction of GaAs in a magnetic field                    Solid Stat. Commun. 18, 1255 (1976)
24               D. Bimberg, P.J. Dean, F. Mansfield                    Novel phenomena in donor-bound excitons in Gallium Phosphide                    J. of Luminescence 12/13, 271 (1976)
25               R.W. Martin, H.L. Störmer, W. Rühle, D. Bimberg                    Photoluminescence of electron-hole-drops in Ge in high magnetic fields                    J. of Luminescence 12/13, 645 (1976)
26               W. Schairer, D. Bimberg, W. Kottler, K. Cho, Martin Schmidt                    Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAs                    Phys. Rev. B 13, 3452 (1976)
27               W. Rühle, D. Bimberg, W. Jakowetz, R. Linnebach                    Radiative decay of bound excitons in GaSb: Evidence of deep A+-impurity states                    J. of Luminescence 12/13, 501 (1976)
28               P.J. Dean, D. Herbert, J. D. Bimberg, Choyke                    Theory of multiple bound excitons at donor and acceptors                    Proc. of the 13th Intern. Conf. on the Phys. of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Rome</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 1142 (1976)
29               F. Salvan, Ph. Mathiez, J.C. McGroddy, D. Bimberg, H.L. Störmer                    Damping of the motion of electron-hole drops in magnetic fields                    Il Nuovo Cimento 39 B, 645 (1977)
30               D. Bimberg, K. Hess, N.O. Lipari, J.U. Fischbach, M. Altarelli                    Free excitons in InP in high magnetic fields                    Physica 81 B+C, 139 (1977)
31               H. Venghaus, P.E. Simmonds, J. Lagois, P.J. Dean, D. Bimberg                    Magnetoreflectance of the G6 - G8 exciton in ZnTe                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 24, 5 (1977)
32               D. Bimberg, H.L. Störmer                    Orientational dependence of the shape of a g-electron-hole-liquid in a magnetic field                    Il Nuovo Cimento 39 B, 615 (1977)
33               D. Bimberg, J.P. Dean                    Potential-dependent electron and hole g values and quenched diamagnetism in GaP, Part II: application of the theory of free and bound holes in a magnetic field to the pseudoacceptors (Do, X)                    Phys. Rev. B 15, 3917 (1977)
34               P.J. Dean, D. Bimberg, F. Mansfield                    Potential-dependent electron and hole g-values and quenched diamagnetism in GaP, Part I: experimental results and properties of the donor states                    Phys. Rev. B 15, 3906 (1977)
35               D. Bimberg, H.L. Störmer                    Verformung laserinduzierter elektrischer Ladungstropfen durch hohe Magnetfelder                    Laser + Elektro-Optik 3, 28 (1977)
36               D. Bimberg                    Wannier-Mott polaritons in magnetic fields                    Festkörperprobleme XVII, 195, ed. by J. Treusch, Vieweg Verlag (1977)
37               M.S. Skolnick, D. Bimberg                    Angular-dependent magneto-luminescence study of the layer compound 2H-PbI2 Phys. Rev. B 18, 7080 (1978)
38               D. Bimberg                    Anomaly of the linear and quadratic Zeeman effect of an effective mass acceptor in azincblende semiconductor: C in GaAs                    Phys. Rev. B 18, 1794 (1978)
39               D. Bimberg, M.S. Skolnick, L.M. Sander                    Camel's back induced stabilization of electron-hole liquids: GaP                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 27, 949 (1978)
40               D. Bimberg, M.S. Skolnick, W.J. Choyke                    Observation of an electron-hole liquid in cubic SiC                    Phys. Rev. Lett. 40, 56 (1978)
41               M.S. Skolnick, D. Bimberg, W.J. Choyke                    The electron-hole-liquid in 15R-SiC                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 28, 865 (1978)
42               M.S. Skolnick, D. Bimberg                    Band parameter determination in the layer compound 2H-PbI2                    Inst. Phys. Conf. Ser. 43, 899 (1979)
43               W. Ekardt und K. Lösch, D. Bimberg                    Determination of the analytical and the nonanalytical part of the exchange interaction of InP and GaAs from polariton spectra in intermediate magnetic fields                    Phys. Rev. B 20, 3303 (1979)
44               D. Bimberg, A. Baldereschi                    Non-hydrogenic magnetic behaviour of impurities in semiconductors with degenerate bands: GaAs:C and GaAs:Sn                    Inst. Phys. Conf. Ser. 43, 403 (1979)
45               D. Bimberg, M.S. Skolnick                    Phonon wind induced anomalous dependence of the electron-hole drop luminescence in Ge at low magnetic fields                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 32, 1311 (1979)
46               D. Bimberg, M.S. Skolnick, L.M. Sander                    Properties of the electron-hole-liquid in GaP                    Phys. Rev. B 19, 2231 (1979)
47               D. Bimberg, M.S. Skolnick, L.M. Sander                    Stabilization of the electron-hole-liquid by the Camel´s back in GaP                    Inst. Phys. Conf. Ser. 43, 175 (1979)
48               D. Bimberg, L.M. Sander, M.S. Skolnick, U. Rössler, W.J. Choyke                    The electron-hole liquid in a polar semiconductor: Cubic SiC                    J. Luminescence 18/19, 542 (1979)
49               D. Bimberg                    The electron-hole-liquid in magnetic fields (review)                    J. of Magnetism and Magnetic Materials 11, 91 (1979)
50               P.J. Dean, D. Bimberg, W.J. Choyke                    The nature of persistent radiative centres in radiation-damaged 6H silicon carbide                    Inst. Phys. Conf. Ser. 46, 447 (1979)
51               M.S. Skolnick, D. Bimberg                    Thermalization of the electron-hole-liquid in Ge between magnetic field split valleys                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 32, 715 (1979)
52               T.L. Reinecke, D. Bimberg                    Calculations of the critical points and ground states for electron-hole droplet condensation in SiC, GaP, and AlAs                    J. Phys. Soc. Japan 49, 499 (1980)
53               A. Bubenzer, D. Bimberg                    Calorimetric absorption spectroscopy (CAS) of GaP: N,S                    J. Phys. Soc. Japan 49, 255 (1980)
54               A. Steckenborn, H. Münzel, D. Bimberg                    Helium-Kühleinrichtung zur Messung der Kathodolumineszenz in REM                    Beitr. elektronenmikroskop. Direktabb. Oberfl. 13, 157 (1980)
55               D. Bimberg, M.S. Skolnick                    Properties of electron-hole-drops in Ge in magnetic fields                    Theoretical aspects and new developments in magneto-optics, J.T. Devreese ed., Plenum Press, N.Y.,p. 527 (1980)
56               M.S. Skolnick, D. Bimberg                    Quantum oscillations and phonon-wind effects in the magnetic field luminescence lifetime and total intensity of the electron hole liquid in Ge                    Phys. Rev. B 21, 4624 (1980)
57               R.G. Humphreys, D. Bimberg, W.J. Choyke                    Wavelength modulated absorption in SiC polytypes                    J. Phys. Soc. Japan 49, 519 (1980)
58               D. Bimberg, A. Altarelli, N.O. Lipari                    A calculation of valence band masses, exciton and acceptor energies and the ground state properties of the electron-hole-liquid in cubic SiC                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 40, 437 (1981)
59               D. Bimberg, W. Bludau, R. Linnebach, E. Bauser                    A dense electron-hole-liuqid in Ga0.08Al0.92As                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 37, 987 (1981)
60               D. Bimberg, A. Bubenzer                    Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP                    Appl. Phys. Lett. 38, 803 (1981)
61               A. Steckenborn, H. Münzel, D. Bimberg                    Cathodoluminescence lifetime pattern of GaAs surface around dislocations                    J. Luminescence 24/25, 351 (1981)
62               A. Steckenborn, H. Münzel, D. Bimberg                    Cathodoluminescence lifetime pattern of semiconductor surfaces and structures                    Inst. Physics. Conf. Proc. 60, 185 (1981)
63               H. Münzel, A. Steckenborn, D. Bimberg                    Hot electrons in cold semiconductors: GaAs, InP and CdTe                    J. Lumminescence 24/25, 569 (1981)
64               D. Bimberg, H. Münzel, A. Steckenborn                    Inhibited relaxation of nonreasonantly excited electrons in a cold lattice                    J. de Physique 42, C7-137 (1981)
65               M. Maier, D. Bimberg, H. Baumgart, F. Phillipp                    SIMS investigation of p-n-junction  quality in ion implanted cw-laser annealed silicon                    Proc. Intern. SIMS Conf., <st1:place w:st="on"><st1:city w:st="on">Budapest</st1:city>, <st1:country-region w:st="on">Hungary</st1:country-region></st1:place> (1981)
66               R.G. Humphreys, D. Bimberg, W.J. Choyke                    Wavelength modulated absorption in SiC                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 39, 163 (1981)
67               M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Philipp                    Electrical and structural properties of p-n-junctions in cw laser annealed Silicon                    Appl. Phys. 53, 5904 (1982)
68               H.J. Klein, D. Bimberg, H. Beneking, J. Kuhl, E.O. Göbel                    High peak power picosecond light pulses from a directly modulated semiconductor laser                    Appl. Phys. Lett. 41, 394 (1982)
69               K.H. Goetz, A.V. Solomonov, D. Bimberg, H. Jürgensen, M. Razeghi, H. Selders                    Low temperature photoluminescence and absorption of GaxIn1-xAs/InP                    J. de Physique 43, C5-383 (1982)
70               D. Bimberg                    Pulse dispersion and preheating effects in ultrafast photoconductive detectors: In0.53Ga0.47As as example                    Appl. Phys. Lett. 41, 368 (1982)
71               H.J. Klein, D. Bimberg, H. Beneking                    Ultrafast thin film GaAs photoconductive detectors                    Thin Solid Films 92, 273 (1982)
72               D. Bimberg                    Bauelemente-Architektur mit III-V-Verbindungen                    Wissenschaftsmagazin TUB 3,1, 99 (1983)
73               H. Münzel, D. Bimberg, A. Steckenborn                    Direct evidence for screening of carrier-acoustic phonon interaction at low to medium carrier densities in GaAs                    Physica B 117/118, 214 (1983)
74               Ch. Meyer, M. Maier, D. Bimberg                    Matrix effect and surface oxidation in depth profiling of AlxGa1-xAs by secondary ion mass spectrometry using O2+ primary ions                    J. Appl. Phys. 54, 2672 (1983)
75               K.H. Goetz, D. Bimberg, H. Jürgensen, J. Selders, A.V. Solomonov, G.F. Glinskii, M. Razeghi                    Optical and crystall0ographic properties and impurity incorporation of GaxIn1-xAs (044<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition                    J. Appl. Phys. 54, 4543 (1983)
76               M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp                    SIMS-Untersuchungen der Qualität von pn-Übergängen in ionenimplantiertem und cw-laserausgeheiltem Silicium                    Fresenius Z. Anal. Chem. 314, 309 (1983)
77               M. Maier, W. Korwald, D. Bimberg                    Unambigous identification of two different processes governing the depth dependence of roughness in sputter profiling of polycrystalline layers                    Proc. of the 3rd Intern. Conf. on Quantitative Surface Analysis; Teddington, GB (1983)
78               D. Bimberg, J. Christen, A. Steckenborn                    Advantages of multiple quantum wells with abrupt interfaces for light emitting devices                    <st1:place w:st="on"><st1:placename w:st="on">Springer</st1:placename> <st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Science. Series Vol. 53 (H.J. Queisser), p. 136 (1984)
79               D. Bimberg, K. Ketterer, H.E. Schöll, H.P. Vollmer                    Generation of 4 ps light pulses from directly modulated V-groove lasers                    Electr. Lett. 20, 640 (1984)
80               W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, E. Bauser                    Heat treatment induced redistribution of vanadium in semiinsulated GaAs:V                    Appl. Phys. Lett. 44, 1078 (1984)
81               E. Schöll, D. Bimberg, H. Schumacher, P.T. Landsberg                    Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection                    IEEE J. of Quantum Electronics QE20, 394 (1984)
82               J. Christen, D. Bimberg, A. Steckenborn, G. Weimann                    Localisation induced electron-hole transition rate enhancement in GaAs Quantum wells                    Appl. Phys. Lett. 44, 84 (1984)
83               E. Bauser, D. Bimberg, K. Heime, H.J. Queisser                    Physik und Technologie der Verbindungshalbleiter                    Report for the German Council, DFG (1984)
84               D. Bimberg, J. Mycielski                    Recombination heating induced delayed energy relaxation of nonequilibrium charge carriers                    Proc. of the 17th Intern. Conf. on the Physics of Semiconductors, D.J. Chadi and W.A. Harrison eds., Springer Verlag, N.Y.,p. 1367 (1984)
85               D. Bimberg, K. Ketterer, M. Brezina, E. Schöll, H.P. Vollmer                    Avalanche generator triggered picosecond light pulses from unbiased V-groove  GaAs/GaAlAs lasers                    Physica 129B, 469 (1985)
86               K.H. Goetz, D. Bimberg, K.A. Brauchle, H. Jürgensen, J. Selders, M. Razeghi, E. Kuphal                    Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP                    Appl. Phys. Lett. 46, 277 (1985)
87               D. Bimberg, H.J. Eichler                    Der Lasermarkt - Ein Milliardenmarkt (Interview)                    Forschung Aktuell 7, 3 (1985)
88               D. Bimberg                    Electron-hole liquids                    Buchbeitrag in: Landoldt-Börnstein, Band III, 17 i, Springer Verlag, p. 297 (1985)
89               K.A. Brauchle, D. Bimberg, K.H. Goetz, H. Jürgensen, J. Selders                    High resolution capacitance  spectroscopy of LPE In0.53Ga0.47As grown on Fe doped InP-substrate and VPE GaAs grown on Cr-doped GaAs-substrate                    Physica 129B, 426 (1985)
90               D. Bimberg, J. Christen, A. Steckenborn, G. Weimann, W. Schlapp                    Injection, intersubband relaxation and recombination in GaAs multiple quantum wells                    J. Luminescence 30, 562 (1985)
91               D. Bimberg, H. Münzel, A. Steckenborn, J. Christen                    Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: carrier capture by impurities                    Phys. Rev. B 31, 7788 (1985)
92               K.H. Goetz, K.A. Brauchle, D. Bimberg                    Photoluminescence and DLTS measurements of deep defect levels in Ga0.47In0.53As/InP                    Proc. of the Intern. Conf. of Defect Recognition and Image Processing in III-V-Compounds, <st1:place w:st="on"><st1:city w:st="on">Montpellier</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1985)
93               D. Bimberg, J. Mycielski                    Recombination heating of nonequilibrium carriers                    Acta Physics Polonica A67, 167 (1985)
94               D. Bimberg, R. Bauer, D. Oertel, J. Mycielski, K.H. Goetz, M. Razeghi                    Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces                    Physica 134B, 399 (1985)
95               D. Bimberg, J. Mycielski                    Recombination-induced heating of free carriers in a semiconductor                    Phys. Rev. B 31, 5490 (1985)
96               W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, E. Tomzig                    Redistribution of Cr in GaAs: Cr and of V in GaAs: after implantation of Si, Be, or B and annealing in a controlled atmosphere                    Appl. Phys. Lett. 46, 489 (1985)
97               A. Juhl, D. Oertel, R. Bauer, C. Maczey, D. Bimberg                    Calorimetric absorption and photoluminescence studies of interface disorder in InGaAsP/InP quantum wells                    Acta Physica Polonica A 69, 877 (1986)
98               D. Bimberg, J. Christen                    Cathodoluminescence investigations of GaAs multiple quantum wells                    Acta Physica Polonica A 69, 841 (1986)
99               K.W. Carey, S.Y. Wang, R. Hull, D. Oertel, R. Bauer, D. Bimberg                    Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high speed p-i-n photodiodes                    J. Crystal Growth 77, 558 (1986)
100            A. Juhl, D. Bimberg                    Determination on the energy positions of the Fe2+ states in semi-insulating InP by the novel calorimetric absorption spectroscopy technique                    Semi-Insulating III-V Mat., 477 (1986)
101            J. Christen, D. Bimberg, A. Steckenborn, G. Weiman, W. Schlapp                    Dynamics of charge carrier energy relaxation and recombination in undoped and P-doped GaAs quantum wells                    J. on Superlattices and Microstructures 2, 251 (1986)
102            D. Bimberg, J. Christen, A. Werner, M. Kunst, G. Weimann, W. Schlapp                    Evidence for excitonic decay of excess charge carriers in high auality GaAs quantum wells at room temperature                    Appl. Phys. Lett. 49, 76 (1986)
103            D. Bimberg, K. Ketterer, E.-H. Böttcher, E. Schöll                    Gain modulation of unbiased semiconductor lasers: Ultrashort light-pulse generation in the 0.8 µm - 1.3 µm wavelength range                    Intern. J. of Electronics 60, 23 (1986)
104            D. Bimberg, E.-H. Böttcher, K. Ketterer, H.P. Vollmer, H. Beneking, P. Röntgen                    Generation and detection of 15-ps light pulses in the 1.2 - 1.3 µm wavelength range by semiconductor lasers and detectors                    Appl. Phys. Lett. 48, 83 (1986)
105            D. Bimberg                    Halbleiterlaser - Winzlinge von riesiger Bedeutung                    Umschau 10, 527 (1986)
106            D. Bimberg                    Lifetime reduction in quantum well structures                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Devices, P. Balk and O. G. Folberth eds., Elsevier, p. 101 (1986)
107            D. Bimberg                    Neuartige Laserdioden auf der Basis strukturell induzierter Lokalisation und mikroskopischer Grenzflächenordnung in Quantentöpfen                    Festschrift 60. Geburtstag Prof. Dr. W. Martienssen (1986)
108            D. Bimberg, H. Nakashima, T. Fukunaga                    Observation of a single molecular terrace at AlGaAs/GaAs hetero interfaces by using scanning CL                    Proc. Fall Meeting of the <st1:country-region w:st="on">Japan</st1:country-region> Society of Appl. Phys., <st1:city w:st="on"><st1:place w:st="on">Sapporo</st1:place></st1:city> (1986)
109            J. Christen, D. Bimberg                    Recombination dynamics of carriers in GaAs-GaAlAs quantum well structures                    Surface Science 174, 261 (1986)
110            R. Bauer, D. Bimberg, J. Christen, D. Oertel, D. Mars, J.N. Miller, T. Fukunaga, H. Nakashima                    Reduced dimensionality induced doublet splitting of heavy hole excitons in GaAs quantum wells                    Proc. 18th Intern. Conf. Phys. Semic., <st1:city w:st="on">Stockholm</st1:city> 1986 (O. Engström, ed.), p. 525, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region> (1987) (1986)
111            K.W. Carey, D. Bimberg, R. Hull, G. Reid, D. Oertel, R. Bauer                    Structural and photoluminescent properties of GaInAs quantum wells with AlInAs or InP barriers grown by organometallic vapor phase epitaxy                    Proc. Electronic Materials Conf., <st1:place w:st="on"><st1:city w:st="on">Amherst</st1:city>, <st1:state w:st="on">MA</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1986)
112            D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel                    Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption                    J. Vac. Sci. Techn. B 4, 1014 (1986)
113            D. Bimberg, J. Mycielski                    The recombination induced temperature change of non-equilibrium charge carriers                    J. of Phys. C 19, 2363 (1986)
114            J.N. Miller, D.E. Mars, D. Bimberg, R. Bauer, D. Oertel                    The structure of the MBE growth interface as revealed by quantum well luminescence and electron diffraction                    Proc. Intern. MBE Conf., <st1:place w:st="on"><st1:city w:st="on">York</st1:city>, <st1:country-region w:st="on">England</st1:country-region></st1:place>  (1986)
115            A. Juhl, A. Hoffmann, D. Bimberg, H.J. Schulz                    Bond-exciton-related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy                    Appl. Phys. Lett. 50, 1292 (1987)
116            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D. Mars, J.N. Miller                    Cathodoluminescence atomic scale images of monolayer islands at GaAs/AlGaAs interfaces                    J. Vac. Sc. Techn. B 5, 1191 (1987)
117            A. Juhl, D. Oertel, C. Maczey, D. Bimberg, K. Carey, R. Hull, G.A. Reid                    Correlation of optical spectra and atomic scale structure of AlInAs/GaInAs quantum wells                    Superlattices and Microstructures 3, 205 (1987)
118            R. Hull, K.W. Carey, J.E. Fouquet, G.A. Reid, S.J. Rosner, D. Bimberg, D. Oertel                    Correlation of structural, chemical and optical properties of GaInAs quantum well                    Inst. Phys. Conf. 83, 209 (1987)
119            E.-H. Böttcher, K. Ketterer, D. Bimberg                    Excitonic and electron-hole contribution to the spontaneous recombination of injected carriers in GaAs-GaAlAs multiple quantum well lasers at room temperatures                    Appl. Phys. Lett. 50, 1074 (1987)
120            K. Ketterer, E.-H. Böttcher, D. Bimberg                    High sensitivity picosecond optical pulse detection by semiconductor lasers via cross-correlation                    Springer Series in Electronics and Photonics 22, 218 (1987)
121            D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel, J. Christen                    Kinetics of island formation at the interface of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption                    Superlattices and Microstructures 3, 79 (1987)
122            D. Bimberg, R.K. Bauer, D. Oertel, D.E. Mars, J. N. Miller                    Noncommutative structure of GaAs quantum well interfaces and inequivalent interface impurity incorporation                    J. de Physique 48, C5-93 (1987)
123            K. Ketterer, E.-H. Böttcher, D. Bimberg                    Picosecond optical sampling by semiconductor lasers                    Appl. Phys. Lett. 50, 1471 (1987)
124            S. Munnix, D. Bimberg                    Simulation of electron beam induced current at GaAs/AlGaAs heterojunctions under forward bias                    Appl. Phys. Lett. 51, 2121 (1987)
125            J. Christen, D. Bimberg                    Abbildung der atomaren Struktur von Halbleitergrenzflächen mittels Kathodolumineszenz                    Material und Struktur-Analyse 19, 4 (1988)
126            M. Grundmann, D. Bimberg                    Anisotropy effects on excitonic properties in realistic quantum wells                    Phys. Rev. B 38, 13486 (1988)
127            C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, N. Nouri                    Anomalous exciton temperatures in GaAs/AlGaAs quantum wells                    Inst. Phys. Conf. Ser. 96, 261 (1988)
128            A. Juhl, D. Bimberg                    Calorimetric absorption and transmission spectroscopy for determination of quantum efficiencies and characterization of ultrathin layers and nonradiative centers                    J. Appl. Phys. 64, 303 (1988)
129            S. Munnix, D. Bimberg                    Carrier injection in semiconductor with position dependent band structure: electron-beam-induced-current at heterojunctions                    J. Appl. Phys. 64, 2505 (1988)
130            J. Christen, D. Bimberg                    Cathodoluminescence imaging of semiconductor interfaces                    Jeol News 26E, 12 (1988)
131            T. Fukunaga, H. Nakashima, J. Christen, D. Bimberg                    Characterization of heterointerfaces abruptness by luminescence method                    Appl. Phys. (<st1:country-region w:st="on"><st1:place w:st="on">Japan</st1:place></st1:country-region>) 57, 45 (1988)
132            T. Wolf, R.K. Bauer, D. Bimberg, W. Schlaack                    Deep donor level Ta in GaAs                    Proc. 5th Conf. on Semi-Insulating III-V Materials, IOP Publishing Ltd., London, p. 391 (1988)
133            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller                    Direct imaging of the columnar structure of GaAs quantum wells                    Superlattices and Microstructures 4, 257 (1988)
134            M. Krahl, J. Christen, D. Bimberg, G. Weimann, W. Schlapp                    Effect of superlattices band structure on spontaneous emission lineshapes in GaAs multiple  quantum wells                    Inst. Phys. Conf., <st1:city w:st="on"><st1:place w:st="on">Bristol</st1:place></st1:city>, p. 441 (1988)
135            Z. Chen, W. Korb, T. Wolf, D. Bimberg                    Electrical characteristics of and deep impurity levels in liquid phase epitaxial Fe-doped In0.53Ga0.47As                    Proc. 5th Conf. on Semi-Insulating III-V Materials, IOP Publishing Ltd., London, p. 231 (1988)
136            R. Köhrbrück, S. Munnix, D. Bimberg, E.C. Larkins, J.S. Harris                    Flux ratio dependence of growth rate, interface quality, and impurity incorporation in MBE grow AlGaAs/GaAs quantum wells                    Inst. Phys. Conf. Ser. 96, 65 (1988)
137            E. Schöll, K. Ketterer, E.-H. Böttcher, D. Bimberg                    Gain-switched semiconductor laser amplifier as an ultrafast dynamical optical gate                    Appl. Phys. B 46, 69 (1988)
138            S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris                    High carrier density in GaAs/AlGaAs modulation n-doped quantum wells: From one-to two-component plasma                    Proc. 19th Intern. Conf. Phys. Semic., <st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region> (<st1:place w:st="on">W. Zawadzki</st1:place> ed.), PAS, p. 147 (1988)
139            M. Krahl, J. Christen, D. Bimberg, G. Weimann, W. Schlapp                    Influence of coupling of wells on spontaneous emission lineshape in GaAs/GaAlAs multiple quantum wells                    Appl. Phys. Lett. 52, 798 (1988)
140            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller                    Influence of interrupted growth on the luminescence properties of quantum wells                    Proc. SPIE Intern. Symp., <st1:place w:st="on"><st1:city w:st="on">Cannes</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> 861, 110 (1988)
141            M. Engel, D. Grützmacher, R.K. Bauer, D. Bimberg, H. Jürgensen                    Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE                    J. Chryst. Growth 93, 359 (1988)
142            P. Lefevre, B. Gil, J.P. Lascavay, H. Mathieu, D. Bimberg, T. Fukunaga und H. Nakashima                    Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum wells grown by molecular beam epitaxy                    Phys. Rev. B 37, 4171 (1988)
143            Z. Chen, T. Wolf, W. Korb, D. Bimberg                    Optical and electrical characterization of high resistivity liquid phase expitaxial In0.53Ga0.47As:Fe                    J. Appl. Phys. 64, 4574 (1988)
144            K. Ketterer, E.-H. Böttcher, D. Bimberg                    Picosecond spectra of gain switched AlGaAs/GaAs multiple quantum well lasers                    Appl. Phys. Lett. 53, 2263 (1988)
145            J. Christen, D. Bimberg                    The interface as a design tool for modelling of optical and electronic properties of quantum well devices                    NATO ASI Series, <st1:place w:st="on"><st1:city w:st="on">Pisa</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place> (1988)
146            E.H. Böttcher, K. Ketterer, D. Bimberg                    Turn-on delay time fluctuations in gain-switched AlGaAs/GaAs multiple quantum well lasers                    J. Appl. Phys. 63, 2469 (1988)
147            D. Bimberg, Z. Chen, W. Korb, T. Wolf                    Validity test of the vacuum referred binding energy model: The Fe2+/Fe3+ energy positions in InGaAs/InP                    Proc. 19th Intern. Conf. Phys. Semic., <st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region> (<st1:place w:st="on">W. Zawadzki</st1:place> ed.), PAS, p. 541 (1988)
148            J. Christen, D. Bimberg, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller                    Visualization and theorectical modelling of the atomistic structure of semiconductor quantum well interfaces                    Springer Series in Solid State Sciences, H.J. Queisser and K. von Klitzing, eds., Berlin, p. 176 (1988)
149            M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller                    Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells                    Appl. Phys. Lett. 55, 1765 (1989)
150            E.-H. Böttcher, D. Bimberg                    Assessment of pulse-to-pulse timing jitter in periodically gain-switched semicon­ductor lasers                    Proc. ESSDERC 89 (A. Heuberger et al. eds., Springer Verlag , p. 377 (1989)
151            A. Nakashima, T. Fukunaga, J. Christen, D. Bimberg                    Cathodoluminescence observation of GaAs/AlGaAs heterointerfaces                    J. Surf. Science Soc. of <st1:country-region w:st="on"><st1:place w:st="on">Japan</st1:place></st1:country-region> 10, 81 (1989)
152            M. Krahl, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller                    Coupling induced enhancement of interface recombination in GaAs multiple quantum well structures                    Proc. ESSDERC 89 (A. Heuberger et al. eds) Springer Verlag, p. 499 (1989)
153            D. Bimberg, D. Oertel, R. Hull, G.A. Reid, K.W. Carey                    Detailed atomic-scale structure of AlInAs/GaInAs quantum wells                    J. Appl. Phys. 65, 2688 (1989)
154            E.-H. Böttcher, D. Bimberg                    Detection of pulse to pulse timing jitter in periodically gain-switched semicon­ductor lasers                    Appl. Phys. Lett. 54, 1971 (1989)
155            J. Christen, M. Grundmann, D. Bimberg                    Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of emiconductor heterointerfaces                    Appl. Surface Science 41/42, 329 (1989)
156            M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller                    Dislocation induced anisotropies of the structural and optical properties of pseudomorphic In0.23Ga0.77As quantum wells                    Inst. Phys. Conf. Ser. 106, 453 (1989)
157            Z. Chen, W. Korb, R.K. Bauer, D. Bimberg                    First observation of a titanium midgap donor level in In0.53Ga0.47As p-n-diodes                    Appl. Phys. Lett. 55, 645 (1989)
158            D. Bimberg                    Gain-switching of semiconductor lasers: Picosecond optical gates and light pulses                    Europhys. Conf. Abstr. 13 D, I 6 (1989)
159            S. Munnix, R.K. Bauer, D. Bimberg, J.S. Harris, R. Köhrbrück, W.C. Larkins, C. Maierhofer, D.E. Mars, J.N. Miller                    Growth kinectics, impurity incorporation, defect generation and interface qualitiy of MBE grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes                    J. Vac. Sci. and Technol. 7, 704 (1989)
160            D. Oertel, D. Bimberg, R. Bauer, K.W. Carey                    High precision band gap determination of Al0.48In0.52As with optical and structural methods                    Appl. Phys. Lett. 55, 140 (1989)
161            C. Maierhofer, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller                    Impact of MBE-growth rate on optical properties of GaAs quantum wells                    Superlattices and microstructures 5, 2 (1989)
162            M. Krahl, J. Christen, D. Bimberg, D. Mars, J. Miller                    Impact of well coupling on the spontaneous emission properties of GaAs/AlGaAs multiple-quantum-well structures                    IEEE J. Quantum Electron. 25, 2281 (1989)
163            R. Köhrbrück, S. Munnix, D. Bimberg, E.C. Larkins, J.S. Harris                    Influence of the As: Ga flux ratio on growth rate, interface quality and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy                    Appl. Phys. Lett. 54, 623 (1989)
164            J. Christen, D. Bimberg                    Lateral mapping of atomic scale interface morphology and dislocation in quantum wells by cathodoluminescence imaging                    Revue de Phys. Appliquée 24, C6-85 (1989)
165            C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, N. Nouri                    Localization-dependent thermalization of excitons in GaAs/AlxGa1-xAs quantum wells                    Phys. Rev. B 39, 3419 (1989)
166            M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull                    Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons                    J. Appl. Phys. 66, 2214 (1989)
167            H.P. Meier, E.van Gieson, P.W. Epperlein, C. Harder, W. Walter, M.Krahl, D. Bimberg                    Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates                    Appl. Phys. Lett. 54, 433 (1989)
168            S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris                    Observation of a many-body edge singularity in the luminescence spectra of GaAs/AlGaAs modulation doped heterostructures                    acta physica polonica A 75, 33 (1989)
169            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller                    Optical images of the atomic scale structure and of monolayer islands at GaAs/AlGaAs interfaces                    acta physica polonica A 75, 5 (1989)
170            S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris                    Optical properties of one- and two-component plasma in GaAs/AlGaAs n-modulation doped heterostructures                    Superlattices and Microstructures 6, 369 (1989)
171            C. Maierhofer, S. Munnix, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller                    Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in MBE                    Appl. Phys. Lett. 55, 50 (1989)
172            A. Weber, E.-H. Böttcher, D. Bimberg                    Substructure in short optical pulses from gain-switched semiconductor lasers                    Appl. Phys. Lett. 55, 1600 (1989)
173            H.P. Meier, E.van Gieson, P.W. Epperlein, C. Harder, W. Walter, M. Krahl, D. Bimberg                    Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers                    J. Crystal Growth 95, 66 (1989)
174            M. Schell, A.G. Weber, D. Bimberg                    Analytical and numerical treatment of sub-ps pulse generation by active mode locking                    Conf. Digest 12th Intern. Semiconductor Laser Conf. 9-14 Sept, 226 (1990)
175            R. Zimmermann, E.-H. Böttcher, N. Kirstaedter, D. Bimberg                    A survey of Band-Gap renormalization in quantum well structures                    Superlatt. and Microstr. 7, 433 (1990)
176            E.-H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier                    Band-Gap renormalization in undoped GaAs/AlGaAs quantum wells determined by a non-spectroscopy method                    Proc. 20th Intern. Conf. on the Physics of Semic., <st1:place w:st="on"><st1:city w:st="on">Thessaloniki</st1:city>, <st1:country-region w:st="on">Greece</st1:country-region></st1:place>. E.M. Anastassakis, J.D. Joannopoulos, eds., World Scientific <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 592 (1990)
177            M. Grundmann, J. Christen, D. Bimberg                    Cathodoluminescence imaging of defects at semiconductor surfaces and interfaces "Defect control in semiconductors" (K. Sumino, ed.) North-Holland, <st1:city w:st="on"><st1:place w:st="on">Amsterdam</st1:place></st1:city>                    p. 1203 (1990)
178            M. Krahl, J. Christen, D. Bimberg                    Coupling induced enhancement of nonradiative and suppression of radiative recombination in superlattices                    J. Luminescence 45, 176 (1990)
179            H. Scheffler, W. Korb, D. Bimberg, H. Ulrici                    Deep Ti-donor in GaAs                    Appl. Phys. Lett. 57, 1318 (1990)
180            M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller                    Dependence of structural and optical properties of InGaAs/GaAs quantum wells on misfit dislocations                    J. Vac Sci Technol. B 8, 751 (1990)
181            J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe                    Direct imaging of lateral bandgap variation in MOCVD grown GaAs on V-grooved Si                    Proc. 20th Intern. Conf. on the Physics of Semic., <st1:place w:st="on"><st1:city w:st="on">Thessaloniki</st1:city>, <st1:country-region w:st="on">Greece</st1:country-region></st1:place>. E.M. Anastassakis, J.D. Joannopoulos, eds., World Scientific <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 272 (1990)
182            M. Krahl, D. Bimberg, R.K. Bauer, D.E. Mars,.J.N. Miller                    Enhancement of nonradiative interface recombination in GaAs coupled quantum wells                    J. Appl. Phys. 67, 434 (1990)
183            A.G. Weber, Wu Ronghan, D. Bimberg                    High frequency response of p-substrate buried crescent InGaAsP lasers                    J. Appl. Phys. 68, 2499 (1990)
184            D. Kuhl, F. Hieroniymi, E.H. Böttcher, D. Bimberg                    High-speed metal semiconductor-metal photodetectors on InP: Fe                    IEEE Photon. Techn. Lett. 2, 574 (1990)
185            D.B. Tran Thoai, R. Zimmermann, M. Grundmann, D. Bimberg                    Image charges in semiconductor quantum wells: effect on exciton binding energy                    Phys. Rev. B 42, 5906 (1990)
186            R. Köhrbrück, S. Munnix, D, Bimberg                    Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/Ga quantum wells                    J. Vac. Sci. Technol B 8, 798 (1990)
187            R. Köhrbrück, S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller                    Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by MBE                    Appl. Phys. Lett. 57, 1025 (1990)
188            C.J. Wei, D. Kuhl, E.-H. Böttcher, D. Bimberg, E. Kuphal                    Lateral high speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs                    IEEE Electron Dev. Lett. 11, 334 (1990)
189            D. Kuhl, C.J. Wei, E.-H. Böttcher, D. Bimberg, E.Kuphal                    Lateral high speed photodiodes on semiinsulating InGaAs                    Springer Proc. in Phys. 49, 104 (1990)
190            J. Christen, D. Bimberg                    Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening and momentum conservation                    Phys. Rev. B 42, 7213 (1990)
191            M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller                    Monoclinic crystal symmetry in partially relaxed pseudomorphic quantum wells: impact on valence band structure and optical anisotropy                    Proc. 20th Intern. Conf. Phys. Semic., World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 165 (1990)
192            M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller                    Pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Correlation of anisotropic lattice relaxation and degradation of optical properties                    Springer Series of <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Sciences 97, 304 (1990)
193            M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller                    Recombination dynamics in pseudomorphic and partially relaxed In0.23Ga0.77As/GaAs quantum wells                    <st1:country-region w:st="on"><st1:place w:st="on">Great Britain</st1:place></st1:country-region> B 41, 10120 (1990)
194            T. Wolf, A. Krost, F. Reier, P. Harde, D. Kuhl, F. Hieronymi, H. Ullrich, D. Bimberg, H. Schumann                    Semiinsulating Fe- and Ti-doped InP and InGaAs for ultrafast infrared detectors grown by LP-MOCVD                    Proc. Intern. Conf. on Semiinsulating Materials, <st1:city w:st="on"><st1:place w:st="on">Toronto</st1:place></st1:city> 1990, IOP Publ. Lim. London, p. 131 (1990)
195            A. Weber, E.-H. Böttcher, D. Bimberg                    Substructure in ps light pulses emitted by gain-switched semiconductor lasers                    Springer Proc. in Phys. 49, 51 (1990)
196            D. Kuhl, F. Hieronymi, E.-H. Böttcher, T. Wolf, A. Krost, D. Bimberg                    Very high speed MSM InGaAs:Fe photodetectors with InP: Fe barrier enhance­ment layer grown by LP-MOCVD                    Electr. Lett. 26, 2107 (1990)
197            J. Christen, M. Krahl, D. Bimberg                    Visualization of the transition from 2D to 3D and from Non-k-conservation to k-conservation in the lineshapes of quantum wells and true superlattices                    Superlattices and Microstructures 7, 1 (1990)
198            D. Bimberg, T. Wolf, J. Böhrer                    4He and 3He caloriometric absorption spectroscopy: Principles and results on InGaAs/InAlAs quantum wells and Fe in InP and GaAs                    Advances in Nonradiative Processes in Solids; B. di Bartolo Editor, Plenum Press, <st1:state w:st="on">New York</st1:state> + <st1:city w:st="on"><st1:place w:st="on">London</st1:place></st1:city>, p. 561 (1991)
199            S. Haacke, R. Zimmermann, D. Bimberg, D.E. Mars, J.N. Miller                    A Study of Band Gap renormalization in n-type and p-type modulation doped GaAs quantum wells                    Superlattices and Microstructures 9, 27 (1991)
200            M. Grundmann, A. Krost, D. Bimberg                    Antiphase-domain-free InP on Si(001): optimization of MOCVD process                    J. Cryst. Growth 115, 150 (1991)
201            J. Christen, M. Grundmann, D. Bimberg, K. Streubel, F. Scholz und U. Morlock                    Atomical morphology of ternary/binary semiconductor heterointerfaces: A comparison of InGaAs/InP and AlGaAs/GaAs grown by MOVPE, MBE and LPE                    MBE and LPE Workshop on Optical Properties of Mesocopic Semiconductor Structures, <st1:place w:st="on"><st1:city w:st="on">Snowbird</st1:city>, <st1:state w:st="on">Utah</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1991)
202            A. Krost, J. Böhrer, M. Grundmann, T. Wolf, D. Bimberg                    Atomically abrupt InGaAs/InP quantum well heterointerfaces of macroscopic dimension grown by LP-MOCVD                    Proc. EWMOVPE IV, Nijmegen, Netherlands 34 (1991)
203            M. Grundmann, J. Christen, D. Bimberg                    Cathodoluminescence of strained quantum wells and layers                    Superlattices and Microstructures 9, 65 (1991)
204            D. Bimberg, M. Grundmann, J. Christen                    Characterization of strained heterostructures by cathodoluminescence                    Am. Vac. Soc. Ser. 10, P.H. Holloway (ed.), Conf. Proc. 227, 68 (1991)
205            M. Krahl, N. Kirstaedter, R.K. Bauer, D. Bimberg, H.P. Meier, C. Harder                    Correlation of time-resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier width                    J. Appl. Phys. 70, 5561 (1991)
206            I. Rechenberg, S. Stoeff, M. Krahl, D. Bimberg, A. Hoepner                    Defect free growth of AlxGa1-xAs by liquid phase epitaxy on V-grooved (001) GaAs substrates                    J. Appl. Phys. 69, 8154 (1991)
207            J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, H. Ishikawa, M. Kamada, N. Watanabe                    Determination of the band discontinuity of MOCVD grown In1-xGaxAs/In1-yAlyAs heterostructures with optical and structural methods                    J. Chryst. Growth 107, 555 (1991)
208            K. Streubel, F. Scholz, V. Harle, M. Bode, M. Grundmann, M. Christen, D. Bimberg                    Determination of the interface structure of very thin GaInAs/InP quantum wells                    Proc. 3rd Intern. Conf. Indium Phosphide and Rel. Mat., IEEE, <st1:city w:st="on"><st1:place w:st="on">Cardiff</st1:place></st1:city>, GB, p. 468 (1991)
209            M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe                    Direct imaging  of Si incorporation in GaAs masklessly grown on patterned Si-substrates                    Appl. Phys. Lett. 58, 2090 (1991)
210            T. Wolf, D. Bimberg, H. Ulrici                    Excitonic fine structure in the charge transfer spectra of GaP:Fe                    Phys. Rev. B 26, 1074 (1991)
211            M. Schell, A.G. Weber, E. Schöll, D. Bimberg                    Fundamental limits of sub-ps pulse generation by active modelocking of semiconductor Lasers: The spectral gain width and the facet reflectivities                    IEEE J. Quant. Electr. 27, 1661 (1991)
212            M.A. Herman, D. Bimberg, J. Christen                    Heterointerfaces in quantum wells and epitaxial growth process: Evaluation by luminescent techniques                    J. Appl. Phys. 70, R1 (1991)
213            N. Kirstaedter, E.H. Böttcher, D. Bimberg, C. Harder, H.P. Meier                    High injection effects in GaAs/AlGaAs quantum wells: Spontaneous recombination and band-gap renormalization                    Granular Nanoelectronics (ed. D.K. Ferry), NATO ASI Series, Series B, Physics Vol. 251, p. 499 (1991)
214            D. Kuhl, F. Hieronymi, E.H. Böttcher, T. Wolf, D. Bimberg, J. Kuhl, M. Klingenstein                    Impulse response of InGaAs metal-semiconductor-metal photodetector                    Proc. ECOC/IOOC `91, <st1:place w:st="on"><st1:city w:st="on">Paris</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> p. 257 (1991)
215            M. Grundmann, A. Krost, D. Bimberg                    Low-temperature metalorganic chemical vapor deposition of InP on Si(001)                    Appl. Phys. Lett. 58, 284 (1991)
216            M. Grundmann, A. Krost, D. Bimberg                    LP-MOVPE growth of antiphase domain free InP on (001) Si using low tempera­ture processing                    J. Crystal Growth 107, 494 (1991)
217            D. Bimberg (editor and author) W. Amende, E.W. Kreutz, P. Seiler, H.-G. Treusch                    Materialbearbeitung mit Lasern                    expert Verlag, Ethningen (1991)
218            U. Morlock, J. Christen, D. Bimberg, E. Bauser, H.J. Queisser, A. Ourmazd                    Morphology of GaAs quantum well interfaces grown by liquid-phase epitaxy                    Phys. Rev. B 44, 8792 (1991)
219            M. Grundmann, A. Krost, D. Bimberg                    Observation of the first order phase transition from single to double stepped Si (001) in MOCVD of InP on Si                    J. Vac. Sci. Technol. B 9, 2158 (1991)
220            H. Ullrich, A. Knecht, D. Bimberg, H. Kräutle, W. Schlaak                    Redistribution of Fe and Ti implanted into InP                    J. of Appl. Phys. 70, 2604 (1991)
221            J. Christen, M. Grundmann, D. Bimberg                    Scanning cathodoluminescence microscopy: A unique approach for atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomoge­neities                    J. Vac. Sci. Technol. B 9, 2358 (1991)
222            M. Schell, A.G. Weber, E.H. Böttcher, E. Schöll, D. Bimberg                    Theory of subpicosecond pulse generation by achive modelocking of a semiconductor laser amplifier in an external cavity: Limits for the pulsewidth                    IEEE J. Quant. Electr. 27, 402 (1991)
223            T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld, H. Schumann                    Transition metal doping of LP-MOCVD-grown InP                    J. Chryst. Growth 107, 381 (1991)
224            D. Bimberg                    Ultrakurze optische Pulse mit Halbleiterlasern                    Buchbeitrag zu: Halbleiter in Forschung und Technik, expert verlag, Ethningen (1991)
225            J. Christen, E. Kapon, M. Grundmann, D.M. Hwang, M. Joschko, D. Bimberg                    1D charge carrier dynamics in GaAs quantum wires: carrier capture, relaxation and recombination                    Physica Status Solidi B 173, 307 (1992)
226            M. Schell, D. Huhse, A.G. Weber, G. Fischbeck, D. Bimberg, D.S. Tarasov, A. V. Gorbachov, D.Z. Garbuzov                    20 nm Wavelength tunable singlemode picosecond pulse generation at 1.3 mm by self-seeded gain switched semiconductor laser                    Electronics Letters 28, 2154 (1992)
227            N. Baber, H. Scheffler, H. Ullrich, T. Wolf, D. Bimberg                    A simple technique for simultaneous fabrication of p+/n-diodes and ohmic contacts on n-type InP                    J. Appl. Phys. 71, 5699 (1992)
228            T. Wolf, D. Bimberg, G. Hirt, D. Hofmann, G. Müller                    A spectroscopic investigation of nominally undoped semi-insulating InP prepared by high-temperature annealing                    Proc. 4th Intern. Conf. in Indium Phosphide and Related Materials, Newport, RI, SPIE, p. 561 (1992)
229            D. Bimberg, F. Heinrichsdorff, R.K. Bauer, D. Gerthsen, D. Stenkamp, D.E. Mars, J.N. Miller                    Binary AlAs/GaAs versus ternary BaAlAs/GaAs interfaces: A dramatic difference of perfection                    J. Vac. Sci. Technol. B 10, 1793 (1992)
230            J. Çhristen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg                    Cathodoluminescence in microporous silicon                    Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 464 (1992)
231            J. Christen, E. Kapon, E. Coles, D.M.H.Wang, L.M. Schiavone, M. Grundmann, D. Bimberg                    Cathodoluminescence investigation of lateral confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates                    Surf. Sci. 267, 257 (1992)
232            M. Grundmann, A. Krost, D. Bimberg                    Crystallographic and optical properties of InP/Si grown by low temperature MOCVD process                    Appl. Surf. Sci. 267, 47 (1992)
233            H. Scheffler, N. Baber, T. Wolf, A. Knecht, D. Bimberg, J. Winterfeld, H. Schumann                    Deep ZR- and HF-related levels in InP                    Proc. EPS, Prag (1992)
234            H. Ullrich, A. Knecht, D. Bimberg, H. Kräutle, W. Schlaak                    Defect-induced redistribution of Fe- or Ti-implanted and annealed GaAs, InAs, GaP, and InP                    J. Appl. Phys. 72, 3514 (1992)
235            S. Haacke, R. Zimmermann, D. Bimberg, D.E. Mars, J.N. Miller und E. Kalt                    Fermi enhancement and Band Gap renormalization of AlxGa1-xAs/GaAs modulation doped quantum wells                    Phys. Rev. B 45, 1736 (1992)
236            N. Baber, H. Scheffler, A. Ostmann, T. Wolf, D. Bimberg                    Field-effect on electron emission from the deep Ti donor level in InP                    Phys. Rev. B 45, 4043 (1992)
237            A. Weber, M. Schell, G. Fischbeck, D. Bimberg                    Generation of single femtosecond pulses by hybrid modelocking of a semicon­ductor laser                    IEEE J. Quant. Electr. QE-28, 2343 (1992)
238            F. Hieronymi, D. Kuhl, E.H. Böttcher, E. Dröge, T. Wolf, D. Bimberg                    High-performance SIM photodetectors on semiinsulating InP: Fe/InGaAs:Fe/InP: Fe                    Proc. 4th Intern. Conf. on Indium Phosphide and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Newport</st1:city>, <st1:state w:st="on">RI</st1:state></st1:place>, SPIE, p. 561 (1992)
239            L. Podlowski, T. Wolf, R. Heitz, A. Hoffmann, W. Ulrici, D. Bimberg, I. Broser                    Hot lines at mK temperatures: 3He/4He Calorimetric absorption Spectra of the Fe3+ ->Fe2+ charge transfer transitions in GaP                    Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 505 (1992)
240            J. Böhrer, A. Krost, D. Bimberg                    InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition                    Appl. Phys. Lett. 60, 2258 (1992)
241            R.F. Schnabel, R. Zimmermann, D. Bimberg, H. Nickel, R. Lösch, W. Schlapp                    Influence of exciton localization on recombination line shapes: InGaAs/GaAs quantum wells as a model                    Phys. Rev. B 46, 9873 (1992)
242            D. Kuhl, F. Hieronymi, E.-H. Böttcher, T. Wolf, D. Bimberg                    Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors                    IEEE J. Lightwave Techn. 10, 753 (1992)
243            M. Grundmann, A. Krost, D. Bimberg, H. Cerva                    InGaAs/InP quantum wells on vicinal Si (001): Structural and optical properties                    J. Vac. Sci. Technol. B 10, 1840 (1992)
244            A. Krost, M. Grundmann, D. Bimberg, H. Cerva                    InP on patterned Si(001): Defect reduction by application of the necking mechanism                    J. Crystal Growth, 124 (1992)
245            J. Christen, E. Kapon, M. Grundmann, M. Walther, R.K. Bauer, D. Bimberg                    Kinetics of relaxation and recombination of quasi-1-dimensional charge carriers in ultra small GaAs/AlGaAs quantum wires                    Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 41 (1992)
246            M. Grundmann, A. Krost, D. Bimberg                    Local Epitaxy of InP on V-grooved Si (001): Complete annihilation domains on narrow stripes                    Proc. Sixth Intern. Conf. of Metalorganic Vapor Phase Epitaxy, June 8-11, p. 17 (1992)
247            M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann                    Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of optical properties                    Appl. Phys. Lett. 60, 3292 (1992)
248            A.G. Weber, Wu Ronghan, E.H. Böttcher, M. Schell, D. Bimberg                    Measurement and simulation of the turn-on delay time jitter in gain-switched semiconductor lasers                    IEEE J. Quantum Electron. 28, 441 (1992)
249            E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, D. Bimberg                    Modelling and characterization of ultra-high-speed InGaAs MSM photodetectors                    Proc. ECOC/IOOC 92, <st1:state w:st="on"><st1:place w:st="on">Berlin</st1:place></st1:state> Part 1, p. 277 (1992)
250            E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier                    Nonspectroscopic approach to the determination of the chemical potential and band-gap renormalization in quantum wells                    Phys. Rev. B 45, 8535 (1992)
251            E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg                    Optical properties of quantum wires grown on nonplanar substrates                    in: Springer Series in Solid State Science, G. Bauer, F. Kuchar, H. Heinrich (eds.), Springer Verlag Berlin, p. 300 (1992)
252            E.Kapon, M. Walther, D.M. Hwang, E. Colar, J. Christen, M. Grundmann, D. Bimberg                    Optical properties of semiconductor quantum wires grown on nonplanar substrates                    Springerseries in Solid State Sciences, G. Bauer, F. Kuchar, H. Heinrich (eds.) Springer-Verlag, Berlin, p. 300 (1992)
253            E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg                    Quantum wire heterostructures for optoelectronic applications                    Superlatt. and Microstr. 12, 491 (1992)
254            M. Schell, A.G. Weber, D. Bimberg                    Sub-Picosecond pulse generation at 1.3 µm by hybrid mode locking                    Proc. 13th IEEE Intern. Semiconductor Laser Conf., 21-25 Sept, p. 248 (1992)
255            J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg                    Temporal evolution of cathodoluminescence in nano-porous silicon                    Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 246 (1992)
256            J. Christen, M. Grundmann, E. Kapon, E. Colas, D. M. Hwang, D. Bimberg                    Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates                    Appl. Phys. Lett. 61, 67 (1992)
257            J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg                    Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates                    Appl. Phys. Lett. 61, 67 (1992)
258            E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, T. Wolf, D. Bimberg                    Ultrafast semiinsulating InP:Fe/InGaAs:Fe/InP:Fe MSM photodetectors: Modelling and performance                    IEEE J. Quant. Electr. QE28, 2343 (1992)
259            J. Böhrer, A. Krost, T. Wolf, D. Bimberg                    Band offsets and transitivity of InGaAs/InAlAs/InP heterostructures                    Phys. Rev. B 47, 6439 (1993)
260            B. Gruska, H. Ullrich, R.K. Bauer, D. Bimberg, K. Wandel                    Cap and capless annealing of Fe-implanted In GaAs                    J. Appl. Phys. 73, 4825 (1993)
261            E.Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg                    Carrier capture and stimulated emission in quantum wire lasers grown on nonplanar substrates                    Phonons in Semiconductor Nanostructures J.P. Leburton et al., eds., Plenum Publishing Corp. Plenum Publishing Corp., p. 317 (1993)
262            D. Bimberg, J. Christen                    Cathodoluminescence images of quantum wells and wires                    Inst. Phys. Conf. Ser. 134, 629 (1993)
263            J. Böhrer, A. Krost, D. Bimberg                    Composition dependence of band gap and type of line-up in In1-x-yGaxAlyAs/InP hetrostructures                    Appl. Phys. Lett. 63, 1918 (1993)
264            L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, D. Bimberg                    Control and characterization of ordering in GaInP                    Appl. Phys. Lett. 62, 3496 (1993)
265            R.F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde                    Epitaxy of high resistivity InP on Si                    Appl. Phys. Lett. 63, 3607 (1993)
266            M. Schell, D. Huhse, D. Bimberg                    Generation of 2.5 ps light pulses with 15 nm wavelength tunability at 1.3 µm by a self-seeded gain-switched semiconductor laser                    IEEE Photon. Techn. Lett. 5, 1267 (1993)
267            M. Schell, D. Huhse, D. Bimberg                    Generation of short (3.5 ps) low jitter (<100 fs) light pulses with a 1.55 µm tunable twin guide laser                    Proc. 19th European Conf. on Optical Communication, <st1:place w:st="on"><st1:city w:st="on">Montreux</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, p. 229 (1993)
268            F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, D. Bimberg                    High performance large area InGaAs metal-semiconductor-metal photodetectors                    IEEE Photonics Techn. Lett. 5, 910 (1993)
269            H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg                    Hole capture cross section of the deep Ti donor level in InP                    Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city>, p. 99 (1993)
270            M. Schell, A.G. Weber, D. Bimberg                    Hybrid mode-locking of semiconductor lasers                    Proc. IEEE Conf. on Lasers and Electro-Optics Soc., 6th Annual Meeting, <st1:city w:st="on"><st1:place w:st="on">San José</st1:place></st1:city>, p. 294 (1993)
271            T. Wolf, D. Drews, H. Scheffler, D. Bimberg, F. Mosel, P. Kupfer, G. Müller                    Identification of deep levels in liquid-uncapsulated Czochralski-grown Fe- and Zn- doped InP: A proof of the nonexistence of a Fe4+/Fe3+ J. Appl. Phys. 73, 226 (1993)
272            Z. Chen, D. Bimberg                    Influence of phase separation on electron mobility in high-purity GaxIn1-xAsyP1-y(0<1)                    Appl. Phys. Lett. 63, 211 (1993)
273            A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg                    InP grown on Si (III): A new approach for an order of magnitude improvement of layer quality                    EW-MOCVPE V, Malmö, Sweden B 7 (1993)
274            R. Zimmermann, D. Bimberg                    Interface excitons in staggered line-up quantum wells: The AlAs/GaAs case                    Phys. Rev. B 47, 15789 (1993)
275            R. Zimmermann, D. Bimberg                    Interface excitons in type-two quantum structures                    J. de Physique IV/C5 IV, 261 (1993)
276            A. Knecht, M. Kuttler, H. Scheffler, T. Wolf, D. Bimberg, H. Kräutle                    Ion implantation of Zr and Hf in InP and GaAs                    Nucl. Instrum. and Methods in Physics Research B 80/81, 683 (1993)
277            F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, D. Bimberg                    Large area InGaAs MSM photodetectors                    Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city>, p. 627 (1993)
278            J. Böhrer, A. Krost, D. Bimberg                    Localized electrons and holes at the staggered band line-up interface of InAlAs/InP                    Proc. EW-MOVPE V, <st1:place w:st="on"><st1:city w:st="on">Malmö</st1:city>, <st1:country-region w:st="on">Sweden</st1:country-region></st1:place> D5 (1993)
279            D. Bimberg (editor and author), M.-A. Beeck, J. Engelsberger, H. Steinbichler, H.J. Tiziani, C. Tropea                    Meßtechniken mit Lasern                    expert Verlag  (1993)
280            S. Tomiya, C.M. Reaves, M. Krishnamurty, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. Den Baars                    Pholuminescence studies of a quantum well modulated by facetting on GaAs (110) surfaces                    Mat. Res. Soc. Symp. Proc. 312, 279 (1993)
281            D. Bimberg, B. Srocka, P.K. Bhattacharya, J. Shah                    Properties of lattice-matched and strained Indium Gallium Arsenide                    P.K. Bhattacharya, ed., <st1:city w:st="on"><st1:place w:st="on">London</st1:place></st1:city>, GB, p. 157 (1993)
282            Y.L. Chang, I-H. Tan, Y.H. Zahng, D. Bimberg, J. Merz, E. Hu                    Reduced quantum efficiency of a near-surface quantum well                    J. Appl. Phys. 74, 5144 (1993)
283            H. Scheffler, B. Srocka, A. Dadgar, M. Kuttler, A. Knecht, R. Heitz, D. Bimberg, J.Y. Hyeon, H. Schumann                    Rh: a dopant with mid gap levels in InP and InGaAs and superior thermal stability                    Mat. Res. Soc. Symp. Proc. 316, 151 (1993)
284            T. Wolf, T. Zinke, A. Krost, D. Bimberg                    Semi-insulating InP codoped with Fe and Ti: An effective means to suppress the interdiffusion of Fe and p-type dopants                    Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city> (1993)
285            R.F. Schnabel, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Grundmann, T. Wolf, K. Schatke, M. Pilatzek, P. Harde                    Semi-insulating InP:Fe grown on Si                    Proc. 5th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Paris</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1993)
286            H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg                    Simultaenous planarized selective-area epitaxy of GaxIn1-xAs in normal and dove-tail etched grooves                    Mat. Res. Soc. Symp. 316, 151 (1993)
287            J. Böhrer, A. Krost, D. Bimberg                    Spatially indirect intersubband transitions of localized electrons and holes at the staggered band lineup In0.52Al0.48As/InP interface                    J. Vac. Sci. Technol. B 11, 1642 (1993)
288            J. Böhrer, A. Krost, D. Bimberg                    Spatially indirect transitions at the staggered band line-up InAlAs/InP interface                    Europhys. Conf. Abstr. 17 A, 1656 (1993)
289            E.H. Böttcher, F. Hieronymi, D. Kuhl, E. Dröge, D. Bimberg                    Transient response of lateral photodetectors                    Appl. Phys. Lett. 62, 18 (1993)
290            J. Böhrer, A. Krost, D. Bimberg, M. Helm, G. Bauer                    Two-dimensional electron and hole states at the staggered band line-up interface of InAlAs/InP                    Appl. Phys. Lett. 63, 2955 (1993)
291            F.Z.Xie, D. Kuhl, E.H. Böttcher, S.Y. Ren, D. Bimberg                    Wide-band frequency response measurements of photodetectors using low-level photocurrent noise detection                    J. Appl. Phys. 73, 8641 (1993)
292            M. Schell, D. Bimberg, V.A. Bogatyrjov, E.M. Dianov, A.S. Kurkov, V.A. Semenov, A.A. Sysoliatin                    540 fs light pulses at 1.5 mm with variable repetition rate using a tuneable twin guide laser and solition compression in a dispersion decreasing fiber                    Techn. Photon. Lett. 6, 1191 (1994)
293            M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon                    Bandgap renormalization in quantum wires                    Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1675 (1994)
294            J. Böhrer, A. Krost, D. Bimberg                    Carrier dynamics in staggered band line-up n-InAlAs/InP heterostructures                    Appl. Phys. Lett. 64, 1992 (1994)
295            A. Krost, N. Esser, H. Selber, J. Christen, D. Bimberg, W. Richter, L.C. Su, G.B. Stringfellow                    Characterisation of ordered and disordered Ga0.51In0.49P domains by Micro-Raman  spectroscopy                    J. Cryst. Growth 145, 171 (1994)
296            L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, D. Bimberg                    Control of ordering in GaInP and effect on bandgap energy                    J. Electr. Mat. 23, 125 (1994)
297            J. Christen, M. Grundmann, M. Joschko, D. Bimberg, E. Kapon                    Cooling of 1-dimensional carriers via inter- and Intra-subband relaxation in GaAs quantum wires                    Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1759 (1994)
298            R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva                    Defect reduction and strain relaxation mechanismus in InP grown on patterned Si (001)                    Proc. 6th Intern. Conf. on InP and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 640 (1994)
299            M. Kuttler, A. Knecht, D. Bimberg, H. Kräutle                    Diffusion of ion implanted Ruthenium and Osmium in GaAs and InP                    Mat. Res. Soc. Symp. Proc. 316, 179 (1994)
300            D. Bimberg, A. Dadgar, R. Heitz, M. Kuttler, A. Näser, H. Scheffler, B. Srocka                    Evidence for Rh2+/3+ deep acceptro levels in InP and In0.53Ga0.47As                    Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 2387 (1994)
301            T. Wolf, T. Zinke, A. Krost, H. Scheffler, H. Ullrich, D. Bimberg, P. Harde                    Fe- and Ti-doping of InP grown by MOCVD for the fabrication of thermally stable high resistivity layers                    J. Appl. Phys. 75, 3870 (1994)
302            B. Srocka, H. Scheffler, D. Bimberg                    Fe2+-Fe3+ level as a recombination center in In0.53Ga0.47As                    Phys. Rev. B 49, 10259 (1994)
303            L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, W. Ulrici                    Fine structure of the (Fe2+(5E), h) bound states in GaP and InP                    Mat. Sci. For. 143-147, 311 (1994)
304            N. Kirstaedter, N.N. Ledentsov, M. Grundmann, M. Schell, D. Bimberg, V.M. Ustinov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, S.V. Ruvimov, U. Richter, P. Werner, J. Heydenreich                    First observation of injection laser emission from InAs/GaAs quantum dots                    14th IEEE Intern. Semicond. Laser Conf., PD2, <st1:state w:st="on"><st1:place w:st="on">Hawaii</st1:place></st1:state> (1994)
305            S. Kollakowski, U. Schade, E.H. Böttcher, D. Bimberg                    Fully passivated AR coated InP/InGaAs MSM photodetectors                    IEEE Photonics Technol. Lett. 6, 1324 (1994)
306            J. Yu, M. Schell, M. Schulze, D. Bimberg                    Generation of 290 fs mulses at 1.3 mm by hybrid mode-locking of a semiconductor laser and optimization of the time-band-width                    Appl. Phys. Lett. 65, 2395 (1994)
307            D. Huhse, M. Schell, J. Kaessner, D. Bimberg, I.S. Turasov, A.V. Gorbachov, D.Z. Garbuzov                    Generation of electrically wavelength tunable (Dl = 40 nm) singlemode laser pulses from a 1,3 mm Fabry-Perot laser by self-seeding in a fiber-optic configu­ration                    Electron. Lett. 30, 157 (1994)
308            D. Huhse, M. Schell, W. Utz, J. Kaessner, D. Bimberg                    Generation of low jitter (210 fs) single mode pulses from a 1,3 mm Fabry-Perot-laser diode by self-seeding                    Proc. 20th European Conference on Optical Communication (ECOC), <st1:place w:st="on"><st1:city w:st="on">Firenze</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 467 (1994)
309            R. F. Schnabel, M. Grundmann, R. Engelhardt, D. Bimberg, H. Cerva                    High quantum efficiency InP-mesas grown by LPE on InP/Si                    Proc. 6th Intern. Conf. on InP and Related Mat., <st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on"><st1:place w:st="on">USA</st1:place></st1:country-region> PDB2 (1994)
310            E. Dröge, R.F. Schnabel, E.H. Böttcher, M. Grundmann, A. Krost, D. Bimberg                    High-speed InGaAs on Si metal-semiconductor-metal photodetectors                    Electr. Lett. 30, 1348 (1994)
311            A. Krost, N. Esser, H. Selber, J. Christen, W. Richter, D. Bimberg, L.C. Su, L.B. Stringfellow                    Identification of ordered and disordered Ga0.51In0.49P domains by spatially resolved luminescence and Raman spectroscopy                    J. Vac. Sci. Techn. B 12, 2558 (1994)
312            H. Scheffler, A. Dadgar, B. Srocka, M. Kuttler, D. Bimberg                    Identification of the deep Ti donor level in InAlAs                    Proc. 6th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 303 (1994)
313            U. Schade, S. Kollakowski, E.H. Böttcher, D. Bimberg                    Improved performance of large-area InP/InGaAs MSM photodetectors by sulfur passivation                    Appl. Phys. Lett. 64, 1389 (1994)
314            D. Bimberg, B. Srocka                    Impurity levels in InGaAs properties of InGaAs                    Properties of InGaAs, EMIS Data Review Series (P. Bhattacharya, ed.) (1994)
315            J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, I. Broser                    Inequivalence of staggered interfaces in InAlAs/InP multiquantum well structures                    Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 695 (1994)
316            J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg                    InGaAs strained quantum wire structures: optical properties and laser applications                    Jpn. J. Appl. Phys. S-I-6-1, 66 (1994)
317            A. Krost, F. Heinrichsdorff, D. Bimberg, H. Cerva                    InP on Si(111): Accommodation of lattice mismatch and structural properties                    Appl. Phys. Lett. 64, 769 (1994)
318            D. Bimberg, J. Böhrer, A. Krost                    Large oscillator strength of spatially indirect e-h recombination at type II heterojunctions: The InAlAs/InP case                    J. Vac. Sci. Technol. A12, 1039 (1994)
319            F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, S. Kollakowski, D. Bimberg                    Large-area low-capacitance InP/InGaAs MSM photodetectors for high-speed operation under front and rear illumination                    Electr. Lett. 30, 1247 (1994)
320            M. Schell, W. Utz, D. Huhse, J. Kaessner, D. Bimberg                    Low Jitter single-mode-pulse generation by a self-seeded, gain-switched Fabry-Pérot semiconductor laser                    Appl. Phys. Lett. 65, 3045 (1994)
321            N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop‘ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich                    Low threshold, large To injection laser emission from (InGa)As quantum dots                    Electr. Lett. 30, 1416 (1994)
322            N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg                    Luminescence and structural properties of (In, Ga)As/GaAs quantum dots                    Proc. 22nd Intern. Conf. Phys. Semic. <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1855 (1994)
323            T. Wolf, W. Ulrich, D. Côte, B. Clerjaud, D. Bimberg                    New evidence for bound states in the charge transfer spectra of TM doped III-V-semiconductors                    Mat. Sci. Forum 143-147, 317 (1994)
324            B. Srocka, H. Scheffler, D. Bimberg                    Observation of Rhodium- and Iridium-related deep levels in In0.53Ga0.47As                    Proc. 6th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 110 (1994)
325            A. Krost, F. Heinrichsdorff, R.F. Schnabel, K. Schatke, D. Bimberg, H. Cerva                    Optical and crystallographic properties of high perfection InP grown on Si(111)                    J. Electr. Mat. 23, 135 (1994)
326            P.C. van Son, J. Cere, M.S. Sherwin, S.J. Allen jr., M. Sundaram, I.-H. Tan, D. Bimberg                    Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures                    Nuclear Instruments & Methods in Physics Research A 341, 174 (1994)
327            D. Bimberg, B. Srocka                    Photoluminescence of pure InGaAs-Alloys                    Properties of InGaAs, EMIS Data Review Series (P. Bhattacharya, ed.) (1994)
328            M. Schell, D. Huhse, D. Bimberg                    Picosecond pulse generation with a 1.55 mm tunable guide laser using blue-chirp compression                    Appl. Phys. Lett. 64, 1923 (1994)
329            M. Grundmann, O. Stier, J. Christen, D. Bimberg                    Pseudomorphic quantum wires: symmetry breaking due to structural, strain and piezoelectric field induced confinement                    Superlatt. Microstr. 16, 249 (1994)
330            M. Grundmann, J. Christen, V. Tuerck, E. Kapon, R. Bhat, C. Caneau, D.M. Hwang, D. Bimberg                    Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Electronics 37, 1097 (1994)
331            M. Grundmann, J. Christen, M. Joschko, O. Stier, D. Bimberg, E. Kapon                    Recombination Kinetics and intersubband relaxation in semiconductor quantum wires                    Semic. Sci. Technol. 9, 1939 (1994)
332            B. Srocka, H. Scheffler, D. Bimberg                    Rhodium- and Iridium-related deep levels in In0.53Ga0.47As                    Appl. Phys. Lett. 64, 2679 (1994)
333            J. Böhrer, A. Krost, D. Bimberg                    Spatially indirect electronic transitions at the staggered band line-up InAlAs/InP interface                    Proc. 4th Intern. Conf. on the Formation of Semic. Interfaces, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 660 (1994)
334            M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg                    Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging                    J. Electr. Mat. 23, 201 (1994)
335            M. Grundmann, V. Tuerck, J. Christen, R.F. Schnabel, O. Stier, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat                    Strained InGaAs/GaAs quantum wires: Modelling and optical properties                    Proc. 6th Intern. Conf. on InP and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 451 (1994)
336            D.Z. Garbuzov, V.P. Evtikhiev, N.I. Katsavets, A.B. Komissarov, T.E. Kudrik, I.V. Kudryashov, V.B. Khalfin, R.K. Bauer, ZHI. Alferov, D. Bimberg                    Study of radiative recombination efficiency in MBW grown, 28-180 Å wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy                    J. Appl. Phys. 75, 4152 (1994)
337            H. Hillmer, S. Hausmann, H. Burkhard, H. Walter, A. Krost, D. Bimberg                    Study of wavelength shift in InGaAs/InAlGaAs QW DFB lasers based on laser parameters from a comparison of experiment and theory                    IEEE J. Quant Electr. 30, 2251 (1994)
338            M. Grundmann, O. Stier, D. Bimberg                    Symmetry breaking in pseudomorphic V-groove quantum wires                    Phys. Rev. B 15, 14187 (1994)
339            M. Grundmann, A. Krost, D. Bimberg, H. Cerva                    The formation of interfaces and crystal defects: A case study of InGaAs QWs on InP/Si (001)                    Proc. ICFSI-4, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 530 (1994)
340            N.N. Ledentsov, F. Heinrichsdorff, M. Grundmann, D. Bimberg                    Type II heterostructures based on GaSb sheets in GaAs matrix                    Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1616 (1994)
341            D. Bimberg, E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, S. Kollakowski, U. Schade                    Ultra-fast InP:Fe/InGaAs:Fe/InP:Fe MSM photodetectors             Halbleiter für die Optoelektronik und Photonik, A. Dörnen et al. (eds.), Verlag Hänsel-Hohenhausen, Egelsbach, p. 283 (1994)

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