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TU Berlin

Inhalt des Dokuments

1967 - 1994

Zum Teil sind Arbeiten gelistet, an denen Prof. Bimberg außerhalb der TU Berlin gearbeitet hat.

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D. Bimberg, W. Dultz, K. Fussgänger

                   Symmetry assignment of the B-band in KI:T1+

                   Phys. Lett. 25A, 766 (1967)

 

2                 D. Bimberg, W. Dultz, W. Gebhardt

                   Electron-lattice interaction with Eg and T2g modes in KC1:Tl+, KBr:T1+, KI:T1+

                   Color Centers in Alkali Halides, Intern. Symp., <st1:place w:st="on"><st1:city w:st="on">Rome</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 38 (1968)

 

3                 D. Bimberg, W. Dultz, K. Fussgänger, W. Gebhardt

                   Electron-lattice interaction in the absorption spectra of Thallium-doped Alkali Halides

                   Z. Physik 224, 364 (1969)

 

4                 D. Bimberg, W. Dultz, W. Gebhardt

                   Stress-induced dichroism in T1+-doped potassium halides

                   Phys. stat. sol. 31, 661 (1969)

 

5                 D. Bimberg, W. Schairer, M. Sondergeld, T.O. Yep

                   Bound exciton luminescence in epitaxial Sn-doped GaAs

                   J. of Luminescence 3, 175 (1970)

 

6                 D. Bimberg, M. Sondergeld, E. Grobe

                   Thermal dissociation of excitons bound to neutral acceptors in high-purity GaAs

                   Phys. Rev. B 4, 3451 (1971)

 

7                 D. Bimberg, W. Schairer

                   Non-hydrogenic exciton and energy Gap of GaAs

                   Phys. Rev. Lett. 28, 442 (1972)

 

8                 A. Engelhardt, D. Bimberg

                   Osteotomie mit Laser

                   Laser 4, 54 (1972)

 

9                 D. Bimberg, H.J. Queisser

                   Radiative recombination of screened excitons

                   Proc. of the 11th Intern. Conf. on the Phys. of Semic., <st1:place w:st="on"><st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region></st1:place>, p. 157 (1972)

 

10               D. Bimberg, F. Willmann, M. Blätte

                   Zeeman effect of noncubic copper centers in epitaxial GaAs

                   Proc. of the Intern. Conf. of Luminescence, <st1:place w:st="on"><st1:city w:st="on">Leningrad</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> (1972)

 

11               F. Willmann, W. Dreybrodt, M. Bettini und E. Bauser, D. Bimberg

                   GaAs luminescence transitions to acceptors in magnetic fields

                   Phys. stat. sol. (b) 60, 751 (1973)

 

12               F. Willmann, D. Bimberg, M. Blätte

                   Optical properties of excitons bound to copper-complex centers in GaAs

                   Phys. Rev. B 7, 2473 (1973)

 

13               D. Bimberg, W. Rühle

                   Direct determination of the free electron mass and g-value in GaSb

                   Proc. of the 12th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Stuttgart</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 561 (1974)

 

14               D. Bimberg, W. Rühle

                   Optical observation of the magnetic freezeout effect in GaSb

                   J. de Physique 35/4, C3-215 (1974)

 

15               D. Bimberg

                   Radiative recombination of bound excitons in semiconducters with Td-symmetry in magnetic fileds

                   Proc. of the Intern. Conf. on "The Application of High Magnetic Fields in Semiconductor Physics", <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place>, p. 339 (1974)

 

16               D. Bimberg, K. Cho, W. Kottler

                   Zeeman and diamagnetic effects of acceptors in III-V-compounds

                   Proc. of the Intern. Colloque on "Physics in High Magnetic Fields", <st1:place w:st="on"><st1:city w:st="on">Grenoble</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, p. 339 (1974)

 

17               D. Bimberg, D.J. Robbins, D.R. Wight, J.P. Jeser

                   CeP5014, A new ultrafast scintillator

                   Appl. Phys. Lett. 27, 67 (1975)

 

18               W. Rühle, D. Bimberg

                   Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb

                   Phys. Rev. B 12, 2382 (1975)

 

19               K. Hess, D. Bimberg, N.O. Lipari, J.U. Fischbach und M. Altarelli

                   Band parameter determination of III-V-compounds from high-field

Magnetoreflectance of Excitons

                   (1976)

 

20               D. Bimberg

                   Bound holes in high magnetic fields

                   Proc. of the 3rd Intern. Conf. on "The Application of High Magnetic Fields in Semiconductor Physics", p. 415 (1976)

 

21               H.L. Störmer, D. Bimberg

                   Deformation of g-electron-hole drops in a magnetic field

                   Comm. on Physics 1, 131 (1976)

 

22               P.J. Dean, D. Herbert, D. Bimberg, J. Choyke

                   Donor exciton satellites in cubic silicon carbide: Multiple bound excitons revisited

                   Phys. Rev. Lett. 37, 1635 (1976)

 

23               J.U. Fischbach, W. Rühle, D. Bimberg, E. Bauser

                   Experimental determination of the anisotropy of the exciton wavefunction of GaAs in a magnetic field

                   Solid Stat. Commun. 18, 1255 (1976)

 

24               D. Bimberg, P.J. Dean, F. Mansfield

                   Novel phenomena in donor-bound excitons in Gallium Phosphide

                   J. of Luminescence 12/13, 271 (1976)

 

25               R.W. Martin, H.L. Störmer, W. Rühle, D. Bimberg

                   Photoluminescence of electron-hole-drops in Ge in high magnetic fields

                   J. of Luminescence 12/13, 645 (1976)

 

26               W. Schairer, D. Bimberg, W. Kottler, K. Cho, Martin Schmidt

                   Piezospectroscopic and magneto-optical study of the Sn-acceptor in GaAs

                   Phys. Rev. B 13, 3452 (1976)

 

27               W. Rühle, D. Bimberg, W. Jakowetz, R. Linnebach

                   Radiative decay of bound excitons in GaSb: Evidence of deep A+-impurity states

                   J. of Luminescence 12/13, 501 (1976)

 

28               P.J. Dean, D. Herbert, J. D. Bimberg, Choyke

                   Theory of multiple bound excitons at donor and acceptors

                   Proc. of the 13th Intern. Conf. on the Phys. of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Rome</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 1142 (1976)

 

29               F. Salvan, Ph. Mathiez, J.C. McGroddy, D. Bimberg, H.L. Störmer

                   Damping of the motion of electron-hole drops in magnetic fields

                   Il Nuovo Cimento 39 B, 645 (1977)

 

30               D. Bimberg, K. Hess, N.O. Lipari, J.U. Fischbach, M. Altarelli

                   Free excitons in InP in high magnetic fields

                   Physica 81 B+C, 139 (1977)

 

31               H. Venghaus, P.E. Simmonds, J. Lagois, P.J. Dean, D. Bimberg

                   Magnetoreflectance of the G6 - G8 exciton in ZnTe

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 24, 5 (1977)

 

32               D. Bimberg, H.L. Störmer

                   Orientational dependence of the shape of a g-electron-hole-liquid in a magnetic field

                   Il Nuovo Cimento 39 B, 615 (1977)

 

33               D. Bimberg, J.P. Dean

                   Potential-dependent electron and hole g values and quenched diamagnetism in GaP, Part II: application of the theory of free and bound holes in a magnetic field to the pseudoacceptors (Do, X)

                   Phys. Rev. B 15, 3917 (1977)

 

34               P.J. Dean, D. Bimberg, F. Mansfield

                   Potential-dependent electron and hole g-values and quenched diamagnetism in GaP, Part I: experimental results and properties of the donor states

                   Phys. Rev. B 15, 3906 (1977)

 

35               D. Bimberg, H.L. Störmer

                   Verformung laserinduzierter elektrischer Ladungstropfen durch hohe Magnetfelder

                   Laser + Elektro-Optik 3, 28 (1977)

 

36               D. Bimberg

                   Wannier-Mott polaritons in magnetic fields

                   Festkörperprobleme XVII, 195, ed. by J. Treusch, Vieweg Verlag (1977)

 

37               M.S. Skolnick, D. Bimberg

                   Angular-dependent magneto-luminescence study of the layer compound 2H-PbI2

                   Phys. Rev. B 18, 7080 (1978)

 

38               D. Bimberg

                   Anomaly of the linear and quadratic Zeeman effect of an effective mass acceptor in azincblende semiconductor: C in GaAs

                   Phys. Rev. B 18, 1794 (1978)

 

39               D. Bimberg, M.S. Skolnick, L.M. Sander

                   Camel's back induced stabilization of electron-hole liquids: GaP

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 27, 949 (1978)

 

40               D. Bimberg, M.S. Skolnick, W.J. Choyke

                   Observation of an electron-hole liquid in cubic SiC

                   Phys. Rev. Lett. 40, 56 (1978)

 

41               M.S. Skolnick, D. Bimberg, W.J. Choyke

                   The electron-hole-liquid in 15R-SiC

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 28, 865 (1978)

 

42               M.S. Skolnick, D. Bimberg

                   Band parameter determination in the layer compound 2H-PbI2

                   Inst. Phys. Conf. Ser. 43, 899 (1979)

 

43               W. Ekardt und K. Lösch, D. Bimberg

                   Determination of the analytical and the nonanalytical part of the exchange interaction of InP and GaAs from polariton spectra in intermediate magnetic fields

                   Phys. Rev. B 20, 3303 (1979)

 

44               D. Bimberg, A. Baldereschi

                   Non-hydrogenic magnetic behaviour of impurities in semiconductors with degenerate bands: GaAs:C and GaAs:Sn

                   Inst. Phys. Conf. Ser. 43, 403 (1979)

 

45               D. Bimberg, M.S. Skolnick

                   Phonon wind induced anomalous dependence of the electron-hole drop luminescence in Ge at low magnetic fields

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 32, 1311 (1979)

 

46               D. Bimberg, M.S. Skolnick, L.M. Sander

                   Properties of the electron-hole-liquid in GaP

                   Phys. Rev. B 19, 2231 (1979)

 

47               D. Bimberg, M.S. Skolnick, L.M. Sander

                   Stabilization of the electron-hole-liquid by the Camel´s back in GaP

                   Inst. Phys. Conf. Ser. 43, 175 (1979)

 

48               D. Bimberg, L.M. Sander, M.S. Skolnick, U. Rössler, W.J. Choyke

                   The electron-hole liquid in a polar semiconductor: Cubic SiC

                   J. Luminescence 18/19, 542 (1979)

 

49               D. Bimberg

                   The electron-hole-liquid in magnetic fields (review)

                   J. of Magnetism and Magnetic Materials 11, 91 (1979)

 

50               P.J. Dean, D. Bimberg, W.J. Choyke

                   The nature of persistent radiative centres in radiation-damaged 6H silicon carbide

                   Inst. Phys. Conf. Ser. 46, 447 (1979)

 

51               M.S. Skolnick, D. Bimberg

                   Thermalization of the electron-hole-liquid in Ge between magnetic field split valleys

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 32, 715 (1979)

 

52               T.L. Reinecke, D. Bimberg

                   Calculations of the critical points and ground states for electron-hole droplet condensation in SiC, GaP, and AlAs

                   J. Phys. Soc. Japan 49, 499 (1980)

 

53               A. Bubenzer, D. Bimberg

                   Calorimetric absorption spectroscopy (CAS) of GaP: N,S

                   J. Phys. Soc. Japan 49, 255 (1980)

 

54               A. Steckenborn, H. Münzel, D. Bimberg

                   Helium-Kühleinrichtung zur Messung der Kathodolumineszenz in REM

                   Beitr. elektronenmikroskop. Direktabb. Oberfl. 13, 157 (1980)

 

55               D. Bimberg, M.S. Skolnick

                   Properties of electron-hole-drops in Ge in magnetic fields

                   Theoretical aspects and new developments in magneto-optics, J.T. Devreese ed., Plenum Press, N.Y.,p. 527 (1980)

 

56               M.S. Skolnick, D. Bimberg

                   Quantum oscillations and phonon-wind effects in the magnetic field luminescence lifetime and total intensity of the electron hole liquid in Ge

                   Phys. Rev. B 21, 4624 (1980)

 

57               R.G. Humphreys, D. Bimberg, W.J. Choyke

                   Wavelength modulated absorption in SiC polytypes

                   J. Phys. Soc. Japan 49, 519 (1980)

 

58               D. Bimberg, A. Altarelli, N.O. Lipari

                   A calculation of valence band masses, exciton and acceptor energies and the ground state properties of the electron-hole-liquid in cubic SiC

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 40, 437 (1981)

 

59               D. Bimberg, W. Bludau, R. Linnebach, E. Bauser

                   A dense electron-hole-liuqid in Ga0.08Al0.92As

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 37, 987 (1981)

 

60               D. Bimberg, A. Bubenzer

                   Calorimetric absorption spectroscopy of nonradiative recombination processes in GaP

                   Appl. Phys. Lett. 38, 803 (1981)

 

61               A. Steckenborn, H. Münzel, D. Bimberg

                   Cathodoluminescence lifetime pattern of GaAs surface around dislocations

                   J. Luminescence 24/25, 351 (1981)

 

62               A. Steckenborn, H. Münzel, D. Bimberg

                   Cathodoluminescence lifetime pattern of semiconductor surfaces and structures

                   Inst. Physics. Conf. Proc. 60, 185 (1981)

 

63               H. Münzel, A. Steckenborn, D. Bimberg

                   Hot electrons in cold semiconductors: GaAs, InP and CdTe

                   J. Lumminescence 24/25, 569 (1981)

 

64               D. Bimberg, H. Münzel, A. Steckenborn

                   Inhibited relaxation of nonreasonantly excited electrons in a cold lattice

                   J. de Physique 42, C7-137 (1981)

 

65               M. Maier, D. Bimberg, H. Baumgart, F. Phillipp

                   SIMS investigation of p-n-junction  quality in ion implanted cw-laser annealed silicon

                   Proc. Intern. SIMS Conf., <st1:place w:st="on"><st1:city w:st="on">Budapest</st1:city>, <st1:country-region w:st="on">Hungary</st1:country-region></st1:place> (1981)

 

66               R.G. Humphreys, D. Bimberg, W.J. Choyke

                   Wavelength modulated absorption in SiC

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Commun. 39, 163 (1981)

 

67               M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Philipp

                   Electrical and structural properties of p-n-junctions in cw laser annealed Silicon

                   Appl. Phys. 53, 5904 (1982)

 

68               H.J. Klein, D. Bimberg, H. Beneking, J. Kuhl, E.O. Göbel

                   High peak power picosecond light pulses from a directly modulated semiconductor laser

                   Appl. Phys. Lett. 41, 394 (1982)

 

69               K.H. Goetz, A.V. Solomonov, D. Bimberg, H. Jürgensen, M. Razeghi, H. Selders

                   Low temperature photoluminescence and absorption of GaxIn1-xAs/InP

                   J. de Physique 43, C5-383 (1982)

 

70               D. Bimberg

                   Pulse dispersion and preheating effects in ultrafast photoconductive detectors: In0.53Ga0.47As as example

                   Appl. Phys. Lett. 41, 368 (1982)

 

71               H.J. Klein, D. Bimberg, H. Beneking

                   Ultrafast thin film GaAs photoconductive detectors

                   Thin Solid Films 92, 273 (1982)

 

72               D. Bimberg

                   Bauelemente-Architektur mit III-V-Verbindungen

                   Wissenschaftsmagazin TUB 3,1, 99 (1983)

 

73               H. Münzel, D. Bimberg, A. Steckenborn

                   Direct evidence for screening of carrier-acoustic phonon interaction at low to medium carrier densities in GaAs

                   Physica B 117/118, 214 (1983)

 

74               Ch. Meyer, M. Maier, D. Bimberg

                   Matrix effect and surface oxidation in depth profiling of AlxGa1-xAs by secondary ion mass spectrometry using O2+ primary ions

                   J. Appl. Phys. 54, 2672 (1983)

 

75               K.H. Goetz, D. Bimberg, H. Jürgensen, J. Selders, A.V. Solomonov, G.F. Glinskii, M. Razeghi

                   Optical and crystall0ographic properties and impurity incorporation of GaxIn1-xAs (044<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; J. Appl. Phys. 54, 4543 (1983)

 

76&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; M. Maier, D. Bimberg, G. Fernholz, H. Baumgart, F. Phillipp

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; SIMS-Untersuchungen der Qualität von pn-Übergängen in ionenimplantiertem und cw-laserausgeheiltem Silicium

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Fresenius Z. Anal. Chem. 314, 309 (1983)

 

77&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; M. Maier, W. Korwald, D. Bimberg

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Unambigous identification of two different processes governing the depth dependence of roughness in sputter profiling of polycrystalline layers

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Proc. of the 3rd Intern. Conf. on Quantitative Surface Analysis; Teddington, GB (1983)

 

78&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; D. Bimberg, J. Christen, A. Steckenborn

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Advantages of multiple quantum wells with abrupt interfaces for light emitting devices

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; <st1:place w:st="on"><st1:placename w:st="on">Springer</st1:placename> <st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Science. Series Vol. 53 (H.J. Queisser), p. 136 (1984)

 

79               D. Bimberg, K. Ketterer, H.E. Schöll, H.P. Vollmer

                   Generation of 4 ps light pulses from directly modulated V-groove lasers

                   Electr. Lett. 20, 640 (1984)

 

80               W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, E. Bauser

                   Heat treatment induced redistribution of vanadium in semiinsulated GaAs:V

                   Appl. Phys. Lett. 44, 1078 (1984)

 

81               E. Schöll, D. Bimberg, H. Schumacher, P.T. Landsberg

                   Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection

                   IEEE J. of Quantum Electronics QE20, 394 (1984)

 

82               J. Christen, D. Bimberg, A. Steckenborn, G. Weimann

                   Localisation induced electron-hole transition rate enhancement in GaAs Quantum wells

                   Appl. Phys. Lett. 44, 84 (1984)

 

83               E. Bauser, D. Bimberg, K. Heime, H.J. Queisser

                   Physik und Technologie der Verbindungshalbleiter

                   Report for the German Council, DFG (1984)

 

84               D. Bimberg, J. Mycielski

                   Recombination heating induced delayed energy relaxation of nonequilibrium charge carriers

                   Proc. of the 17th Intern. Conf. on the Physics of Semiconductors, D.J. Chadi and W.A. Harrison eds., Springer Verlag, N.Y.,p. 1367 (1984)

 

85               D. Bimberg, K. Ketterer, M. Brezina, E. Schöll, H.P. Vollmer

                   Avalanche generator triggered picosecond light pulses from unbiased V-groove  GaAs/GaAlAs lasers

                   Physica 129B, 469 (1985)

 

86               K.H. Goetz, D. Bimberg, K.A. Brauchle, H. Jürgensen, J. Selders, M. Razeghi, E. Kuphal

                   Deep Fe and intrinsic defect levels in Ga0.47In0.53As/InP

                   Appl. Phys. Lett. 46, 277 (1985)

 

87               D. Bimberg, H.J. Eichler

                   Der Lasermarkt - Ein Milliardenmarkt (Interview)

                   Forschung Aktuell 7, 3 (1985)

 

88               D. Bimberg

                   Electron-hole liquids

                   Buchbeitrag in: Landoldt-Börnstein, Band III, 17 i, Springer Verlag, p. 297 (1985)

 

89               K.A. Brauchle, D. Bimberg, K.H. Goetz, H. Jürgensen, J. Selders

                   High resolution capacitance  spectroscopy of LPE In0.53Ga0.47As grown on Fe doped InP-substrate and VPE GaAs grown on Cr-doped GaAs-substrate

                   Physica 129B, 426 (1985)

 

90               D. Bimberg, J. Christen, A. Steckenborn, G. Weimann, W. Schlapp

                   Injection, intersubband relaxation and recombination in GaAs multiple quantum wells

                   J. Luminescence 30, 562 (1985)

 

91               D. Bimberg, H. Münzel, A. Steckenborn, J. Christen

                   Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: carrier capture by impurities

                   Phys. Rev. B 31, 7788 (1985)

 

92               K.H. Goetz, K.A. Brauchle, D. Bimberg

                   Photoluminescence and DLTS measurements of deep defect levels in

Ga0.47In0.53As/InP

                   Proc. of the Intern. Conf. of Defect Recognition and Image Processing in III-V-Compounds, <st1:place w:st="on"><st1:city w:st="on">Montpellier</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1985)

 

93               D. Bimberg, J. Mycielski

                   Recombination heating of nonequilibrium carriers

                   Acta Physics Polonica A67, 167 (1985)

 

94               D. Bimberg, R. Bauer, D. Oertel, J. Mycielski, K.H. Goetz, M. Razeghi

                   Recombination of carriers confined at In0.53Ga0.47As/InP and

In0.75Ga0.25As0.5P0.5/InP interfaces

                   Physica 134B, 399 (1985)

 

95               D. Bimberg, J. Mycielski

                   Recombination-induced heating of free carriers in a semiconductor

                   Phys. Rev. B 31, 5490 (1985)

 

96               W. Kütt, D. Bimberg, M. Maier, H. Kräutle, F. Köhl, E. Tomzig

                   Redistribution of Cr in GaAs: Cr and of V in GaAs: after implantation of Si, Be, or B and annealing in a controlled atmosphere

                   Appl. Phys. Lett. 46, 489 (1985)

 

97               A. Juhl, D. Oertel, R. Bauer, C. Maczey, D. Bimberg

                   Calorimetric absorption and photoluminescence studies of interface disorder in InGaAsP/InP quantum wells

                   Acta Physica Polonica A 69, 877 (1986)

 

98               D. Bimberg, J. Christen

                   Cathodoluminescence investigations of GaAs multiple quantum wells

                   Acta Physica Polonica A 69, 841 (1986)

 

99               K.W. Carey, S.Y. Wang, R. Hull, D. Oertel, R. Bauer, D. Bimberg

                   Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high speed p-i-n photodiodes

                   J. Crystal Growth 77, 558 (1986)

 

100            A. Juhl, D. Bimberg

                   Determination on the energy positions of the Fe2+ states in semi-insulating InP by the novel calorimetric absorption spectroscopy technique

                   Semi-Insulating III-V Mat., 477 (1986)

 

101            J. Christen, D. Bimberg, A. Steckenborn, G. Weiman, W. Schlapp

                   Dynamics of charge carrier energy relaxation and recombination in undoped and P-doped GaAs quantum wells

                   J. on Superlattices and Microstructures 2, 251 (1986)

 

102            D. Bimberg, J. Christen, A. Werner, M. Kunst, G. Weimann, W. Schlapp

                   Evidence for excitonic decay of excess charge carriers in high auality GaAs quantum wells at room temperature

                   Appl. Phys. Lett. 49, 76 (1986)

 

103            D. Bimberg, K. Ketterer, E.-H. Böttcher, E. Schöll

                   Gain modulation of unbiased semiconductor lasers: Ultrashort light-pulse generation in the 0.8 µm - 1.3 µm wavelength range

                   Intern. J. of Electronics 60, 23 (1986)

 

104            D. Bimberg, E.-H. Böttcher, K. Ketterer, H.P. Vollmer, H. Beneking, P. Röntgen

                   Generation and detection of 15-ps light pulses in the 1.2 - 1.3 µm wavelength range by semiconductor lasers and detectors

                   Appl. Phys. Lett. 48, 83 (1986)

 

105            D. Bimberg

                   Halbleiterlaser - Winzlinge von riesiger Bedeutung

                   Umschau 10, 527 (1986)

 

106            D. Bimberg

                   Lifetime reduction in quantum well structures

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Devices, P. Balk and O. G. Folberth eds., Elsevier, p. 101 (1986)

 

107            D. Bimberg

                   Neuartige Laserdioden auf der Basis strukturell induzierter Lokalisation und mikroskopischer Grenzflächenordnung in Quantentöpfen

                   Festschrift 60. Geburtstag Prof. Dr. W. Martienssen (1986)

 

108            D. Bimberg, H. Nakashima, T. Fukunaga

                   Observation of a single molecular terrace at AlGaAs/GaAs hetero interfaces by using scanning CL

                   Proc. Fall Meeting of the <st1:country-region w:st="on">Japan</st1:country-region> Society of Appl. Phys., <st1:city w:st="on"><st1:place w:st="on">Sapporo</st1:place></st1:city> (1986)

 

109            J. Christen, D. Bimberg

                   Recombination dynamics of carriers in GaAs-GaAlAs quantum well structures

                   Surface Science 174, 261 (1986)

 

110            R. Bauer, D. Bimberg, J. Christen, D. Oertel, D. Mars, J.N. Miller, T. Fukunaga, H. Nakashima

                   Reduced dimensionality induced doublet splitting of heavy hole excitons in GaAs quantum wells

                   Proc. 18th Intern. Conf. Phys. Semic., <st1:city w:st="on">Stockholm</st1:city> 1986 (O. Engström, ed.), p. 525, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region> (1987) (1986)

 

111            K.W. Carey, D. Bimberg, R. Hull, G. Reid, D. Oertel, R. Bauer

                   Structural and photoluminescent properties of GaInAs quantum wells with AlInAs or InP barriers grown by organometallic vapor phase epitaxy

                   Proc. Electronic Materials Conf., <st1:place w:st="on"><st1:city w:st="on">Amherst</st1:city>, <st1:state w:st="on">MA</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1986)

 

112            D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel

                   Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

                   J. Vac. Sci. Techn. B 4, 1014 (1986)

 

113            D. Bimberg, J. Mycielski

                   The recombination induced temperature change of non-equilibrium charge carriers

                   J. of Phys. C 19, 2363 (1986)

 

114            J.N. Miller, D.E. Mars, D. Bimberg, R. Bauer, D. Oertel

                   The structure of the MBE growth interface as revealed by quantum well luminescence and electron diffraction

                   Proc. Intern. MBE Conf., <st1:place w:st="on"><st1:city w:st="on">York</st1:city>, <st1:country-region w:st="on">England</st1:country-region></st1:place>  (1986)

 

115            A. Juhl, A. Hoffmann, D. Bimberg, H.J. Schulz

                   Bond-exciton-related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy

                   Appl. Phys. Lett. 50, 1292 (1987)

 

116            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D. Mars, J.N. Miller

                   Cathodoluminescence atomic scale images of monolayer islands at GaAs/AlGaAs interfaces

                   J. Vac. Sc. Techn. B 5, 1191 (1987)

 

117            A. Juhl, D. Oertel, C. Maczey, D. Bimberg, K. Carey, R. Hull, G.A. Reid

                   Correlation of optical spectra and atomic scale structure of AlInAs/GaInAs quantum wells

                   Superlattices and Microstructures 3, 205 (1987)

 

118            R. Hull, K.W. Carey, J.E. Fouquet, G.A. Reid, S.J. Rosner, D. Bimberg, D. Oertel

                   Correlation of structural, chemical and optical properties of GaInAs quantum well

                   Inst. Phys. Conf. 83, 209 (1987)

 

119            E.-H. Böttcher, K. Ketterer, D. Bimberg

                   Excitonic and electron-hole contribution to the spontaneous recombination of injected carriers in GaAs-GaAlAs multiple quantum well lasers at room temperatures

                   Appl. Phys. Lett. 50, 1074 (1987)

 

120            K. Ketterer, E.-H. Böttcher, D. Bimberg

                   High sensitivity picosecond optical pulse detection by semiconductor lasers via cross-correlation

                   Springer Series in Electronics and Photonics 22, 218 (1987)

 

121            D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel, J. Christen

                   Kinetics of island formation at the interface of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption

                   Superlattices and Microstructures 3, 79 (1987)

 

122            D. Bimberg, R.K. Bauer, D. Oertel, D.E. Mars, J. N. Miller

                   Noncommutative structure of GaAs quantum well interfaces and inequivalent interface impurity incorporation

                   J. de Physique 48, C5-93 (1987)

 

123            K. Ketterer, E.-H. Böttcher, D. Bimberg

                   Picosecond optical sampling by semiconductor lasers

                   Appl. Phys. Lett. 50, 1471 (1987)

 

124            S. Munnix, D. Bimberg

                   Simulation of electron beam induced current at GaAs/AlGaAs heterojunctions under forward bias

                   Appl. Phys. Lett. 51, 2121 (1987)

 

125            J. Christen, D. Bimberg

                   Abbildung der atomaren Struktur von Halbleitergrenzflächen mittels

Kathodolumineszenz

                   Material und Struktur-Analyse 19, 4 (1988)

 

126            M. Grundmann, D. Bimberg

                   Anisotropy effects on excitonic properties in realistic quantum wells

                   Phys. Rev. B 38, 13486 (1988)

 

127            C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, N. Nouri

                   Anomalous exciton temperatures in GaAs/AlGaAs quantum wells

                   Inst. Phys. Conf. Ser. 96, 261 (1988)

 

128            A. Juhl, D. Bimberg

                   Calorimetric absorption and transmission spectroscopy for determination of quantum efficiencies and characterization of ultrathin layers and nonradiative centers

                   J. Appl. Phys. 64, 303 (1988)

 

129            S. Munnix, D. Bimberg

                   Carrier injection in semiconductor with position dependent band structure: electron-beam-induced-current at heterojunctions

                   J. Appl. Phys. 64, 2505 (1988)

 

130            J. Christen, D. Bimberg

                   Cathodoluminescence imaging of semiconductor interfaces

                   Jeol News 26E, 12 (1988)

 

131            T. Fukunaga, H. Nakashima, J. Christen, D. Bimberg

                   Characterization of heterointerfaces abruptness by luminescence method

                   Appl. Phys. (<st1:country-region w:st="on"><st1:place w:st="on">Japan</st1:place></st1:country-region>) 57, 45 (1988)

 

132            T. Wolf, R.K. Bauer, D. Bimberg, W. Schlaack

                   Deep donor level Ta in GaAs

                   Proc. 5th Conf. on Semi-Insulating III-V Materials, IOP Publishing Ltd., London, p. 391 (1988)

 

133            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller

                   Direct imaging of the columnar structure of GaAs quantum wells

                   Superlattices and Microstructures 4, 257 (1988)

 

134            M. Krahl, J. Christen, D. Bimberg, G. Weimann, W. Schlapp

                   Effect of superlattices band structure on spontaneous emission lineshapes in GaAs multiple  quantum wells

                   Inst. Phys. Conf., <st1:city w:st="on"><st1:place w:st="on">Bristol</st1:place></st1:city>, p. 441 (1988)

 

135            Z. Chen, W. Korb, T. Wolf, D. Bimberg

                   Electrical characteristics of and deep impurity levels in liquid phase epitaxial Fe-doped In0.53Ga0.47As

                   Proc. 5th Conf. on Semi-Insulating III-V Materials, IOP Publishing Ltd., London, p. 231 (1988)

 

136            R. Köhrbrück, S. Munnix, D. Bimberg, E.C. Larkins, J.S. Harris

                   Flux ratio dependence of growth rate, interface quality, and impurity incorporation in MBE grow AlGaAs/GaAs quantum wells

                   Inst. Phys. Conf. Ser. 96, 65 (1988)

 

137            E. Schöll, K. Ketterer, E.-H. Böttcher, D. Bimberg

                   Gain-switched semiconductor laser amplifier as an ultrafast dynamical optical gate

                   Appl. Phys. B 46, 69 (1988)

 

138            S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris

                   High carrier density in GaAs/AlGaAs modulation n-doped quantum wells: From one-to two-component plasma

                   Proc. 19th Intern. Conf. Phys. Semic., <st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region> (<st1:place w:st="on">W. Zawadzki</st1:place> ed.), PAS, p. 147 (1988)

 

139            M. Krahl, J. Christen, D. Bimberg, G. Weimann, W. Schlapp

                   Influence of coupling of wells on spontaneous emission lineshape in GaAs/GaAlAs multiple quantum wells

                   Appl. Phys. Lett. 52, 798 (1988)

 

140            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller

                   Influence of interrupted growth on the luminescence properties of quantum wells

                   Proc. SPIE Intern. Symp., <st1:place w:st="on"><st1:city w:st="on">Cannes</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> 861, 110 (1988)

 

141            M. Engel, D. Grützmacher, R.K. Bauer, D. Bimberg, H. Jürgensen

                   Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE

                   J. Chryst. Growth 93, 359 (1988)

 

142            P. Lefevre, B. Gil, J.P. Lascavay, H. Mathieu, D. Bimberg, T. Fukunaga und H. Nakashima

                   Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum wells grown by molecular beam epitaxy

                   Phys. Rev. B 37, 4171 (1988)

 

143            Z. Chen, T. Wolf, W. Korb, D. Bimberg

                   Optical and electrical characterization of high resistivity liquid phase expitaxial In0.53Ga0.47As:Fe

                   J. Appl. Phys. 64, 4574 (1988)

 

144            K. Ketterer, E.-H. Böttcher, D. Bimberg

                   Picosecond spectra of gain switched AlGaAs/GaAs multiple quantum well lasers

                   Appl. Phys. Lett. 53, 2263 (1988)

 

145            J. Christen, D. Bimberg

                   The interface as a design tool for modelling of optical and electronic properties of quantum well devices

                   NATO ASI Series, <st1:place w:st="on"><st1:city w:st="on">Pisa</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place> (1988)

 

146            E.H. Böttcher, K. Ketterer, D. Bimberg

                   Turn-on delay time fluctuations in gain-switched AlGaAs/GaAs multiple quantum well lasers

                   J. Appl. Phys. 63, 2469 (1988)

 

147            D. Bimberg, Z. Chen, W. Korb, T. Wolf

                   Validity test of the vacuum referred binding energy model: The Fe2+/Fe3+ energy positions in InGaAs/InP

                   Proc. 19th Intern. Conf. Phys. Semic., <st1:city w:st="on">Warsaw</st1:city>, <st1:country-region w:st="on">Poland</st1:country-region> (<st1:place w:st="on">W. Zawadzki</st1:place> ed.), PAS, p. 541 (1988)

 

148            J. Christen, D. Bimberg, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller

                   Visualization and theorectical modelling of the atomistic structure of semiconductor quantum well interfaces

                   Springer Series in Solid State Sciences, H.J. Queisser and K. von Klitzing, eds., Berlin, p. 176 (1988)

 

149            M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller

                   Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells

                   Appl. Phys. Lett. 55, 1765 (1989)

 

150            E.-H. Böttcher, D. Bimberg

                   Assessment of pulse-to-pulse timing jitter in periodically gain-switched semicon­ductor lasers

                   Proc. ESSDERC 89 (A. Heuberger et al. eds., Springer Verlag , p. 377 (1989)

 

151            A. Nakashima, T. Fukunaga, J. Christen, D. Bimberg

                   Cathodoluminescence observation of GaAs/AlGaAs heterointerfaces

                   J. Surf. Science Soc. of <st1:country-region w:st="on"><st1:place w:st="on">Japan</st1:place></st1:country-region> 10, 81 (1989)

 

152            M. Krahl, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller

                   Coupling induced enhancement of interface recombination in GaAs multiple quantum well structures

                   Proc. ESSDERC 89 (A. Heuberger et al. eds) Springer Verlag, p. 499 (1989)

 

153            D. Bimberg, D. Oertel, R. Hull, G.A. Reid, K.W. Carey

                   Detailed atomic-scale structure of AlInAs/GaInAs quantum wells

                   J. Appl. Phys. 65, 2688 (1989)

 

154            E.-H. Böttcher, D. Bimberg

                   Detection of pulse to pulse timing jitter in periodically gain-switched semicon­ductor lasers

                   Appl. Phys. Lett. 54, 1971 (1989)

 

155            J. Christen, M. Grundmann, D. Bimberg

                   Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of emiconductor heterointerfaces

                   Appl. Surface Science 41/42, 329 (1989)

 

156            M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller

                   Dislocation induced anisotropies of the structural and optical properties of pseudomorphic In0.23Ga0.77As quantum wells

                   Inst. Phys. Conf. Ser. 106, 453 (1989)

 

157            Z. Chen, W. Korb, R.K. Bauer, D. Bimberg

                   First observation of a titanium midgap donor level in In0.53Ga0.47As p-n-diodes

                   Appl. Phys. Lett. 55, 645 (1989)

 

158            D. Bimberg

                   Gain-switching of semiconductor lasers: Picosecond optical gates and light pulses

                   Europhys. Conf. Abstr. 13 D, I 6 (1989)

 

159            S. Munnix, R.K. Bauer, D. Bimberg, J.S. Harris, R. Köhrbrück, W.C. Larkins, C. Maierhofer, D.E. Mars, J.N. Miller

                   Growth kinectics, impurity incorporation, defect generation and interface qualitiy of MBE grown AlGaAs/GaAs quantum wells: Role of group III and group V fluxes

                   J. Vac. Sci. and Technol. 7, 704 (1989)

 

160            D. Oertel, D. Bimberg, R. Bauer, K.W. Carey

                   High precision band gap determination of Al0.48In0.52As with optical and structural methods

                   Appl. Phys. Lett. 55, 140 (1989)

 

161            C. Maierhofer, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller

                   Impact of MBE-growth rate on optical properties of GaAs quantum wells

                   Superlattices and microstructures 5, 2 (1989)

 

162            M. Krahl, J. Christen, D. Bimberg, D. Mars, J. Miller

                   Impact of well coupling on the spontaneous emission properties of GaAs/AlGaAs multiple-quantum-well structures

                   IEEE J. Quantum Electron. 25, 2281 (1989)

 

163            R. Köhrbrück, S. Munnix, D. Bimberg, E.C. Larkins, J.S. Harris

                   Influence of the As: Ga flux ratio on growth rate, interface quality and impurity incorporation in AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

                   Appl. Phys. Lett. 54, 623 (1989)

 

164            J. Christen, D. Bimberg

                   Lateral mapping of atomic scale interface morphology and dislocation in quantum wells by cathodoluminescence imaging

                   Revue de Phys. Appliquée 24, C6-85 (1989)

 

165            C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, N. Nouri

                   Localization-dependent thermalization of excitons in GaAs/AlxGa1-xAs quantum wells

                   Phys. Rev. B 39, 3419 (1989)

 

166            M. Grundmann, J. Christen, D. Bimberg, A. Fischer-Colbrie, R. Hull

                   Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons

                   J. Appl. Phys. 66, 2214 (1989)

 

167            H.P. Meier, E.van Gieson, P.W. Epperlein, C. Harder, W. Walter, M.Krahl, D. Bimberg

                   Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates

                   Appl. Phys. Lett. 54, 433 (1989)

 

168            S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris

                   Observation of a many-body edge singularity in the luminescence spectra of GaAs/AlGaAs modulation doped heterostructures

                   acta physica polonica A 75, 33 (1989)

 

169            D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, J.N. Miller

                   Optical images of the atomic scale structure and of monolayer islands at GaAs/AlGaAs interfaces

                   acta physica polonica A 75, 5 (1989)

 

170            S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller, E.C. Larkins, J.S. Harris

                   Optical properties of one- and two-component plasma in GaAs/AlGaAs

n-modulation doped heterostructures

                   Superlattices and Microstructures 6, 369 (1989)

 

171            C. Maierhofer, S. Munnix, D. Bimberg, R.K. Bauer, D.E. Mars, J.N. Miller

                   Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in MBE

                   Appl. Phys. Lett. 55, 50 (1989)

 

172            A. Weber, E.-H. Böttcher, D. Bimberg

                   Substructure in short optical pulses from gain-switched semiconductor lasers

                   Appl. Phys. Lett. 55, 1600 (1989)

 

173            H.P. Meier, E.van Gieson, P.W. Epperlein, C. Harder, W. Walter, M. Krahl, D. Bimberg

                   Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers

                   J. Crystal Growth 95, 66 (1989)

 

174            M. Schell, A.G. Weber, D. Bimberg

                   Analytical and numerical treatment of sub-ps pulse generation by active mode locking

                   Conf. Digest 12th Intern. Semiconductor Laser Conf. 9-14 Sept, 226 (1990)

 

175            R. Zimmermann, E.-H. Böttcher, N. Kirstaedter, D. Bimberg

                   A survey of Band-Gap renormalization in quantum well structures

                   Superlatt. and Microstr. 7, 433 (1990)

 

176            E.-H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, C. Harder, M. Meier

                   Band-Gap renormalization in undoped GaAs/AlGaAs quantum wells determined by a non-spectroscopy method

                   Proc. 20th Intern. Conf. on the Physics of Semic., <st1:place w:st="on"><st1:city w:st="on">Thessaloniki</st1:city>, <st1:country-region w:st="on">Greece</st1:country-region></st1:place>. E.M. Anastassakis, J.D. Joannopoulos, eds., World Scientific <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 592 (1990)

 

177            M. Grundmann, J. Christen, D. Bimberg

                   Cathodoluminescence imaging of defects at semiconductor surfaces and interfaces "Defect control in semiconductors" (K. Sumino, ed.) North-Holland, <st1:city w:st="on"><st1:place w:st="on">Amsterdam</st1:place></st1:city>

                   p. 1203 (1990)

 

178            M. Krahl, J. Christen, D. Bimberg

                   Coupling induced enhancement of nonradiative and suppression of radiative recombination in superlattices

                   J. Luminescence 45, 176 (1990)

 

179            H. Scheffler, W. Korb, D. Bimberg, H. Ulrici

                   Deep Ti-donor in GaAs

                   Appl. Phys. Lett. 57, 1318 (1990)

 

180            M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller

                   Dependence of structural and optical properties of InGaAs/GaAs quantum wells on misfit dislocations

                   J. Vac Sci Technol. B 8, 751 (1990)

 

181            J. Christen, M. Grundmann, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe

                   Direct imaging of lateral bandgap variation in MOCVD grown GaAs on V-grooved Si

                   Proc. 20th Intern. Conf. on the Physics of Semic., <st1:place w:st="on"><st1:city w:st="on">Thessaloniki</st1:city>, <st1:country-region w:st="on">Greece</st1:country-region></st1:place>. E.M. Anastassakis, J.D. Joannopoulos, eds., World Scientific <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 272 (1990)

 

182            M. Krahl, D. Bimberg, R.K. Bauer, D.E. Mars,.J.N. Miller

                   Enhancement of nonradiative interface recombination in GaAs coupled quantum wells

                   J. Appl. Phys. 67, 434 (1990)

 

183            A.G. Weber, Wu Ronghan, D. Bimberg

                   High frequency response of p-substrate buried crescent InGaAsP lasers

                   J. Appl. Phys. 68, 2499 (1990)

 

184            D. Kuhl, F. Hieroniymi, E.H. Böttcher, D. Bimberg

                   High-speed metal semiconductor-metal photodetectors on InP: Fe

                   IEEE Photon. Techn. Lett. 2, 574 (1990)

 

185            D.B. Tran Thoai, R. Zimmermann, M. Grundmann, D. Bimberg

                   Image charges in semiconductor quantum wells: effect on exciton binding energy

                   Phys. Rev. B 42, 5906 (1990)

 

186            R. Köhrbrück, S. Munnix, D, Bimberg

                   Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/Ga quantum wells

                   J. Vac. Sci. Technol B 8, 798 (1990)

 

187            R. Köhrbrück, S. Munnix, D. Bimberg, D.E. Mars, J.N. Miller

                   Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/GaAs quantum wells grown by MBE

                   Appl. Phys. Lett. 57, 1025 (1990)

 

188            C.J. Wei, D. Kuhl, E.-H. Böttcher, D. Bimberg, E. Kuphal

                   Lateral high speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs

                   IEEE Electron Dev. Lett. 11, 334 (1990)

 

189            D. Kuhl, C.J. Wei, E.-H. Böttcher, D. Bimberg, E.Kuphal

                   Lateral high speed photodiodes on semiinsulating InGaAs

                   Springer Proc. in Phys. 49, 104 (1990)

 

190            J. Christen, D. Bimberg

                   Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening and momentum conservation

                   Phys. Rev. B 42, 7213 (1990)

 

191            M. Grundmann, U. Lienert, D. Bimberg, A. Fischer-Colbrie, J.N. Miller

                   Monoclinic crystal symmetry in partially relaxed pseudomorphic quantum wells: impact on valence band structure and optical anisotropy

                   Proc. 20th Intern. Conf. Phys. Semic., World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 165 (1990)

 

192            M. Grundmann, U. Lienert, J. Christen, D. Bimberg, A. Fischer-Colbrie, J.N. Miller

                   Pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Correlation of anisotropic lattice relaxation and degradation of optical properties

                   Springer Series of <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Sciences 97, 304 (1990)

 

193            M. Grundmann, D. Bimberg, A. Fischer-Colbrie, J.N. Miller

                   Recombination dynamics in pseudomorphic and partially relaxed

In0.23Ga0.77As/GaAs quantum wells

                   <st1:country-region w:st="on"><st1:place w:st="on">Great Britain</st1:place></st1:country-region> B 41, 10120 (1990)

 

194            T. Wolf, A. Krost, F. Reier, P. Harde, D. Kuhl, F. Hieronymi, H. Ullrich, D. Bimberg, H. Schumann

                   Semiinsulating Fe- and Ti-doped InP and InGaAs for ultrafast infrared detectors grown by LP-MOCVD

                   Proc. Intern. Conf. on Semiinsulating Materials, <st1:city w:st="on"><st1:place w:st="on">Toronto</st1:place></st1:city> 1990, IOP Publ. Lim. London, p. 131 (1990)

 

195            A. Weber, E.-H. Böttcher, D. Bimberg

                   Substructure in ps light pulses emitted by gain-switched semiconductor lasers

                   Springer Proc. in Phys. 49, 51 (1990)

 

196            D. Kuhl, F. Hieronymi, E.-H. Böttcher, T. Wolf, A. Krost, D. Bimberg

                   Very high speed MSM InGaAs:Fe photodetectors with InP: Fe barrier enhance­ment layer grown by LP-MOCVD

                   Electr. Lett. 26, 2107 (1990)

 

197            J. Christen, M. Krahl, D. Bimberg

                   Visualization of the transition from 2D to 3D and from Non-k-conservation to k-conservation in the lineshapes of quantum wells and true superlattices

                   Superlattices and Microstructures 7, 1 (1990)

 

198            D. Bimberg, T. Wolf, J. Böhrer

                   4He and 3He caloriometric absorption spectroscopy: Principles and results on InGaAs/InAlAs quantum wells and Fe in InP and GaAs

                   Advances in Nonradiative Processes in Solids; B. di Bartolo Editor, Plenum Press, <st1:state w:st="on">New York</st1:state> + <st1:city w:st="on"><st1:place w:st="on">London</st1:place></st1:city>, p. 561 (1991)

 

199            S. Haacke, R. Zimmermann, D. Bimberg, D.E. Mars, J.N. Miller

                   A Study of Band Gap renormalization in n-type and p-type modulation doped GaAs quantum wells

                   Superlattices and Microstructures 9, 27 (1991)

 

200            M. Grundmann, A. Krost, D. Bimberg

                   Antiphase-domain-free InP on Si(001): optimization of MOCVD process

                   J. Cryst. Growth 115, 150 (1991)

 

201            J. Christen, M. Grundmann, D. Bimberg, K. Streubel, F. Scholz und U. Morlock

                   Atomical morphology of ternary/binary semiconductor heterointerfaces: A comparison of InGaAs/InP and AlGaAs/GaAs grown by MOVPE, MBE and LPE

                   MBE and LPE Workshop on Optical Properties of Mesocopic Semiconductor Structures, <st1:place w:st="on"><st1:city w:st="on">Snowbird</st1:city>, <st1:state w:st="on">Utah</st1:state>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1991)

 

202            A. Krost, J. Böhrer, M. Grundmann, T. Wolf, D. Bimberg

                   Atomically abrupt InGaAs/InP quantum well heterointerfaces of macroscopic dimension grown by LP-MOCVD

                   Proc. EWMOVPE IV, Nijmegen, Netherlands 34 (1991)

 

203            M. Grundmann, J. Christen, D. Bimberg

                   Cathodoluminescence of strained quantum wells and layers

                   Superlattices and Microstructures 9, 65 (1991)

 

204            D. Bimberg, M. Grundmann, J. Christen

                   Characterization of strained heterostructures by cathodoluminescence

                   Am. Vac. Soc. Ser. 10, P.H. Holloway (ed.), Conf. Proc. 227, 68 (1991)

 

205            M. Krahl, N. Kirstaedter, R.K. Bauer, D. Bimberg, H.P. Meier, C. Harder

                   Correlation of time-resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier width

                   J. Appl. Phys. 70, 5561 (1991)

 

206            I. Rechenberg, S. Stoeff, M. Krahl, D. Bimberg, A. Hoepner

                   Defect free growth of AlxGa1-xAs by liquid phase epitaxy on V-grooved (001) GaAs substrates

                   J. Appl. Phys. 69, 8154 (1991)

 

207            J. Böhrer, M. Grundmann, U. Lienert, D. Bimberg, H. Ishikawa, M. Kamada, N. Watanabe

                   Determination of the band discontinuity of MOCVD grown In1-xGaxAs/In1-yAlyAs heterostructures with optical and structural methods

                   J. Chryst. Growth 107, 555 (1991)

 

208            K. Streubel, F. Scholz, V. Harle, M. Bode, M. Grundmann, M. Christen, D. Bimberg

                   Determination of the interface structure of very thin GaInAs/InP quantum wells

                   Proc. 3rd Intern. Conf. Indium Phosphide and Rel. Mat., IEEE, <st1:city w:st="on"><st1:place w:st="on">Cardiff</st1:place></st1:city>, GB, p. 468 (1991)

 

209            M. Grundmann, J. Christen, D. Bimberg, A. Hashimoto, T. Fukunaga, N. Watanabe

                   Direct imaging  of Si incorporation in GaAs masklessly grown on patterned Si-substrates

                   Appl. Phys. Lett. 58, 2090 (1991)

 

210            T. Wolf, D. Bimberg, H. Ulrici

                   Excitonic fine structure in the charge transfer spectra of GaP:Fe

                   Phys. Rev. B 26, 1074 (1991)

 

211            M. Schell, A.G. Weber, E. Schöll, D. Bimberg

                   Fundamental limits of sub-ps pulse generation by active modelocking of semiconductor Lasers: The spectral gain width and the facet reflectivities

                   IEEE J. Quant. Electr. 27, 1661 (1991)

 

212            M.A. Herman, D. Bimberg, J. Christen

                   Heterointerfaces in quantum wells and epitaxial growth process: Evaluation by luminescent techniques

                   J. Appl. Phys. 70, R1 (1991)

 

213            N. Kirstaedter, E.H. Böttcher, D. Bimberg, C. Harder, H.P. Meier

                   High injection effects in GaAs/AlGaAs quantum wells: Spontaneous recombination and band-gap renormalization

                   Granular Nanoelectronics (ed. D.K. Ferry), NATO ASI Series, Series B, Physics Vol. 251, p. 499 (1991)

 

214            D. Kuhl, F. Hieronymi, E.H. Böttcher, T. Wolf, D. Bimberg, J. Kuhl, M. Klingenstein

                   Impulse response of InGaAs metal-semiconductor-metal photodetector

                   Proc. ECOC/IOOC `91, <st1:place w:st="on"><st1:city w:st="on">Paris</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> p. 257 (1991)

 

215            M. Grundmann, A. Krost, D. Bimberg

                   Low-temperature metalorganic chemical vapor deposition of InP on Si(001)

                   Appl. Phys. Lett. 58, 284 (1991)

 

216            M. Grundmann, A. Krost, D. Bimberg

                   LP-MOVPE growth of antiphase domain free InP on (001) Si using low tempera­ture processing

                   J. Crystal Growth 107, 494 (1991)

 

217            D. Bimberg (editor and author) W. Amende, E.W. Kreutz, P. Seiler, H.-G. Treusch

                   Materialbearbeitung mit Lasern

                   expert Verlag, Ethningen (1991)

 

218            U. Morlock, J. Christen, D. Bimberg, E. Bauser, H.J. Queisser, A. Ourmazd

                   Morphology of GaAs quantum well interfaces grown by liquid-phase epitaxy

                   Phys. Rev. B 44, 8792 (1991)

 

219            M. Grundmann, A. Krost, D. Bimberg

                   Observation of the first order phase transition from single to double stepped Si (001) in MOCVD of InP on Si

                   J. Vac. Sci. Technol. B 9, 2158 (1991)

 

220            H. Ullrich, A. Knecht, D. Bimberg, H. Kräutle, W. Schlaak

                   Redistribution of Fe and Ti implanted into InP

                   J. of Appl. Phys. 70, 2604 (1991)

 

221            J. Christen, M. Grundmann, D. Bimberg

                   Scanning cathodoluminescence microscopy: A unique approach for atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomoge­neities

                   J. Vac. Sci. Technol. B 9, 2358 (1991)

 

222            M. Schell, A.G. Weber, E.H. Böttcher, E. Schöll, D. Bimberg

                   Theory of subpicosecond pulse generation by achive modelocking of a semiconductor laser amplifier in an external cavity: Limits for the pulsewidth

                   IEEE J. Quant. Electr. 27, 402 (1991)

 

223            T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld, H. Schumann

                   Transition metal doping of LP-MOCVD-grown InP

                   J. Chryst. Growth 107, 381 (1991)

 

224            D. Bimberg

                   Ultrakurze optische Pulse mit Halbleiterlasern

                   Buchbeitrag zu: Halbleiter in Forschung und Technik, expert verlag, Ethningen (1991)

 

225            J. Christen, E. Kapon, M. Grundmann, D.M. Hwang, M. Joschko, D. Bimberg

                   1D charge carrier dynamics in GaAs quantum wires: carrier capture, relaxation and recombination

                   Physica Status Solidi B 173, 307 (1992)

 

226            M. Schell, D. Huhse, A.G. Weber, G. Fischbeck, D. Bimberg, D.S. Tarasov, A. V. Gorbachov, D.Z. Garbuzov

                   20 nm Wavelength tunable singlemode picosecond pulse generation at 1.3 mm by self-seeded gain switched semiconductor laser

                   Electronics Letters 28, 2154 (1992)

 

227            N. Baber, H. Scheffler, H. Ullrich, T. Wolf, D. Bimberg

                   A simple technique for simultaneous fabrication of p+/n-diodes and ohmic contacts on n-type InP

                   J. Appl. Phys. 71, 5699 (1992)

 

228            T. Wolf, D. Bimberg, G. Hirt, D. Hofmann, G. Müller

                   A spectroscopic investigation of nominally undoped semi-insulating InP prepared by high-temperature annealing

                   Proc. 4th Intern. Conf. in Indium Phosphide and Related Materials, Newport, RI, SPIE, p. 561 (1992)

 

229            D. Bimberg, F. Heinrichsdorff, R.K. Bauer, D. Gerthsen, D. Stenkamp, D.E. Mars, J.N. Miller

                   Binary AlAs/GaAs versus ternary BaAlAs/GaAs interfaces: A dramatic difference of perfection

                   J. Vac. Sci. Technol. B 10, 1793 (1992)

 

230            J. Çhristen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg

                   Cathodoluminescence in microporous silicon

                   Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 464 (1992)

 

231            J. Christen, E. Kapon, E. Coles, D.M.H.Wang, L.M. Schiavone, M. Grundmann, D. Bimberg

                   Cathodoluminescence investigation of lateral confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates

                   Surf. Sci. 267, 257 (1992)

 

232            M. Grundmann, A. Krost, D. Bimberg

                   Crystallographic and optical properties of InP/Si grown by low temperature MOCVD process

                   Appl. Surf. Sci. 267, 47 (1992)

 

233            H. Scheffler, N. Baber, T. Wolf, A. Knecht, D. Bimberg, J. Winterfeld, H. Schumann

                   Deep ZR- and HF-related levels in InP

                   Proc. EPS, Prag (1992)

 

234            H. Ullrich, A. Knecht, D. Bimberg, H. Kräutle, W. Schlaak

                   Defect-induced redistribution of Fe- or Ti-implanted and annealed GaAs, InAs, GaP, and InP

                   J. Appl. Phys. 72, 3514 (1992)

 

235            S. Haacke, R. Zimmermann, D. Bimberg, D.E. Mars, J.N. Miller und E. Kalt

                   Fermi enhancement and Band Gap renormalization of AlxGa1-xAs/GaAs modulation doped quantum wells

                   Phys. Rev. B 45, 1736 (1992)

 

236            N. Baber, H. Scheffler, A. Ostmann, T. Wolf, D. Bimberg

                   Field-effect on electron emission from the deep Ti donor level in InP

                   Phys. Rev. B 45, 4043 (1992)

 

237            A. Weber, M. Schell, G. Fischbeck, D. Bimberg

                   Generation of single femtosecond pulses by hybrid modelocking of a semicon­ductor laser

                   IEEE J. Quant. Electr. QE-28, 2343 (1992)

 

238            F. Hieronymi, D. Kuhl, E.H. Böttcher, E. Dröge, T. Wolf, D. Bimberg

                   High-performance SIM photodetectors on semiinsulating InP: Fe/InGaAs:Fe/InP: Fe

                   Proc. 4th Intern. Conf. on Indium Phosphide and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Newport</st1:city>, <st1:state w:st="on">RI</st1:state></st1:place>, SPIE, p. 561 (1992)

 

239            L. Podlowski, T. Wolf, R. Heitz, A. Hoffmann, W. Ulrici, D. Bimberg, I. Broser

                   Hot lines at mK temperatures: 3He/4He Calorimetric absorption Spectra of the Fe3+ ->Fe2+ charge transfer transitions in GaP

                   Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 505 (1992)

 

240            J. Böhrer, A. Krost, D. Bimberg

                   InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition

                   Appl. Phys. Lett. 60, 2258 (1992)

 

241            R.F. Schnabel, R. Zimmermann, D. Bimberg, H. Nickel, R. Lösch, W. Schlapp

                   Influence of exciton localization on recombination line shapes: InGaAs/GaAs quantum wells as a model

                   Phys. Rev. B 46, 9873 (1992)

 

242            D. Kuhl, F. Hieronymi, E.-H. Böttcher, T. Wolf, D. Bimberg

                   Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors

                   IEEE J. Lightwave Techn. 10, 753 (1992)

 

243            M. Grundmann, A. Krost, D. Bimberg, H. Cerva

                   InGaAs/InP quantum wells on vicinal Si (001): Structural and optical properties

                   J. Vac. Sci. Technol. B 10, 1840 (1992)

 

244            A. Krost, M. Grundmann, D. Bimberg, H. Cerva

                   InP on patterned Si(001): Defect reduction by application of the necking mechanism

                   J. Crystal Growth, 124 (1992)

 

245            J. Christen, E. Kapon, M. Grundmann, M. Walther, R.K. Bauer, D. Bimberg

                   Kinetics of relaxation and recombination of quasi-1-dimensional charge carriers in ultra small GaAs/AlGaAs quantum wires

                   Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 41 (1992)

 

246            M. Grundmann, A. Krost, D. Bimberg

                   Local Epitaxy of InP on V-grooved Si (001): Complete annihilation domains on narrow stripes

                   Proc. Sixth Intern. Conf. of Metalorganic Vapor Phase Epitaxy, June 8-11, p. 17 (1992)

 

247            M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann

                   Maskless growth of InP stripes on patterned Si (001): Defect reduction and improvement of optical properties

                   Appl. Phys. Lett. 60, 3292 (1992)

 

248            A.G. Weber, Wu Ronghan, E.H. Böttcher, M. Schell, D. Bimberg

                   Measurement and simulation of the turn-on delay time jitter in gain-switched semiconductor lasers

                   IEEE J. Quantum Electron. 28, 441 (1992)

 

249            E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, D. Bimberg

                   Modelling and characterization of ultra-high-speed InGaAs MSM photodetectors

                   Proc. ECOC/IOOC 92, <st1:state w:st="on"><st1:place w:st="on">Berlin</st1:place></st1:state> Part 1, p. 277 (1992)

 

250            E.H. Böttcher, N. Kirstaedter, M. Grundmann, D. Bimberg, R. Zimmermann, C. Harder, H.P. Meier

                   Nonspectroscopic approach to the determination of the chemical potential and band-gap renormalization in quantum wells

                   Phys. Rev. B 45, 8535 (1992)

 

251            E. Kapon, M. Walther, J. Christen, M. Grundmann, D.M. Hwang, E. Colas, D. Bimberg

                   Optical properties of quantum wires grown on nonplanar substrates

                   in: Springer Series in Solid State Science, G. Bauer, F. Kuchar, H. Heinrich (eds.), Springer Verlag Berlin, p. 300 (1992)

 

252            E.Kapon, M. Walther, D.M. Hwang, E. Colar, J. Christen, M. Grundmann, D. Bimberg

                   Optical properties of semiconductor quantum wires grown on nonplanar substrates

                   Springerseries in Solid State Sciences, G. Bauer, F. Kuchar, H. Heinrich (eds.) Springer-Verlag, Berlin, p. 300 (1992)

 

253            E. Kapon, M. Walther, J. Christen, M. Grundmann, C. Caneau, D.M. Hwang, E. Colas, R. Bhat, G.H. Song, D. Bimberg

                   Quantum wire heterostructures for optoelectronic applications

                   Superlatt. and Microstr. 12, 491 (1992)

 

254            M. Schell, A.G. Weber, D. Bimberg

                   Sub-Picosecond pulse generation at 1.3 µm by hybrid mode locking

                   Proc. 13th IEEE Intern. Semiconductor Laser Conf., 21-25 Sept, p. 248 (1992)

 

255            J. Christen, V. Petrova-Koch, V. Lehmann, T. Muschik, A. Kux, M. Grundmann, D. Bimberg

                   Temporal evolution of cathodoluminescence in nano-porous silicon

                   Proc. 21st Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Beijing</st1:city>, <st1:country-region w:st="on">China</st1:country-region></st1:place>, p. 246 (1992)

 

256            J. Christen, M. Grundmann, E. Kapon, E. Colas, D. M. Hwang, D. Bimberg

                   Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates

                   Appl. Phys. Lett. 61, 67 (1992)

 

257            J. Christen, M. Grundmann, E. Kapon, E. Colas, D.M. Hwang, D. Bimberg

                   Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates

                   Appl. Phys. Lett. 61, 67 (1992)

 

258            E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, T. Wolf, D. Bimberg

                   Ultrafast semiinsulating InP:Fe/InGaAs:Fe/InP:Fe MSM photodetectors: Modelling and performance

                   IEEE J. Quant. Electr. QE28, 2343 (1992)

 

259            J. Böhrer, A. Krost, T. Wolf, D. Bimberg

                   Band offsets and transitivity of InGaAs/InAlAs/InP heterostructures

                   Phys. Rev. B 47, 6439 (1993)

 

260            B. Gruska, H. Ullrich, R.K. Bauer, D. Bimberg, K. Wandel

                   Cap and capless annealing of Fe-implanted In GaAs

                   J. Appl. Phys. 73, 4825 (1993)

 

261            E.Kapon, M. Walther, D.M. Hwang, E. Colas, C. Caneau, R. Bhat, J. Christen, M. Grundmann, D. Bimberg

                   Carrier capture and stimulated emission in quantum wire lasers grown on nonplanar substrates

                   Phonons in Semiconductor Nanostructures J.P. Leburton et al., eds., Plenum Publishing Corp. Plenum Publishing Corp., p. 317 (1993)

 

262            D. Bimberg, J. Christen

                   Cathodoluminescence images of quantum wells and wires

                   Inst. Phys. Conf. Ser. 134, 629 (1993)

 

263            J. Böhrer, A. Krost, D. Bimberg

                   Composition dependence of band gap and type of line-up in In1-x-yGaxAlyAs/InP hetrostructures

                   Appl. Phys. Lett. 63, 1918 (1993)

 

264            L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, D. Bimberg

                   Control and characterization of ordering in GaInP

                   Appl. Phys. Lett. 62, 3496 (1993)

 

265            R.F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, D. Bimberg, M. Pilatzek, P. Harde

                   Epitaxy of high resistivity InP on Si

                   Appl. Phys. Lett. 63, 3607 (1993)

 

266            M. Schell, D. Huhse, D. Bimberg

                   Generation of 2.5 ps light pulses with 15 nm wavelength tunability at 1.3 µm by a self-seeded gain-switched semiconductor laser

                   IEEE Photon. Techn. Lett. 5, 1267 (1993)

 

267            M. Schell, D. Huhse, D. Bimberg

                   Generation of short (3.5 ps) low jitter (<100 fs) light pulses with a 1.55 µm tunable twin guide laser

                   Proc. 19th European Conf. on Optical Communication, <st1:place w:st="on"><st1:city w:st="on">Montreux</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, p. 229 (1993)

 

268            F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, D. Bimberg

                   High performance large area InGaAs metal-semiconductor-metal photodetectors

                   IEEE Photonics Techn. Lett. 5, 910 (1993)

 

269            H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg

                   Hole capture cross section of the deep Ti donor level in InP

                   Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city>, p. 99 (1993)

 

270            M. Schell, A.G. Weber, D. Bimberg

                   Hybrid mode-locking of semiconductor lasers

                   Proc. IEEE Conf. on Lasers and Electro-Optics Soc., 6th Annual Meeting, <st1:city w:st="on"><st1:place w:st="on">San José</st1:place></st1:city>, p. 294 (1993)

 

271            T. Wolf, D. Drews, H. Scheffler, D. Bimberg, F. Mosel, P. Kupfer, G. Müller

                   Identification of deep levels in liquid-uncapsulated Czochralski-grown Fe- and Zn- doped InP: A proof of the nonexistence of a Fe4+/Fe3+

                   J. Appl. Phys. 73, 226 (1993)

 

272            Z. Chen, D. Bimberg

                   Influence of phase separation on electron mobility in high-purity GaxIn1-xAsyP1-y(0<y<1)

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Appl. Phys. Lett. 63, 211 (1993)

 

273&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; InP grown on Si (III): A new approach for an order of magnitude improvement of layer quality

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; EW-MOCVPE V, Malmö, Sweden B 7 (1993)

 

274&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; R. Zimmermann, D. Bimberg

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Interface excitons in staggered line-up quantum wells: The AlAs/GaAs case

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Phys. Rev. B 47, 15789 (1993)

 

275&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; R. Zimmermann, D. Bimberg

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Interface excitons in type-two quantum structures

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; J. de Physique IV/C5 IV, 261 (1993)

 

276&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; A. Knecht, M. Kuttler, H. Scheffler, T. Wolf, D. Bimberg, H. Kräutle

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Ion implantation of Zr and Hf in InP and GaAs

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Nucl. Instrum. and Methods in Physics Research B 80/81, 683 (1993)

 

277&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, D. Bimberg

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Large area InGaAs MSM photodetectors

&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city>, p. 627 (1993)

 

278            J. Böhrer, A. Krost, D. Bimberg

                   Localized electrons and holes at the staggered band line-up interface of InAlAs/InP

                   Proc. EW-MOVPE V, <st1:place w:st="on"><st1:city w:st="on">Malmö</st1:city>, <st1:country-region w:st="on">Sweden</st1:country-region></st1:place> D5 (1993)

 

279            D. Bimberg (editor and author), M.-A. Beeck, J. Engelsberger, H. Steinbichler, H.J. Tiziani, C. Tropea

                   Meßtechniken mit Lasern

                   expert Verlag  (1993)

 

280            S. Tomiya, C.M. Reaves, M. Krishnamurty, M. Wassermeier, D. Bimberg, P.M. Petroff, S.P. Den Baars

                   Pholuminescence studies of a quantum well modulated by facetting on GaAs (110) surfaces

                   Mat. Res. Soc. Symp. Proc. 312, 279 (1993)

 

281            D. Bimberg, B. Srocka, P.K. Bhattacharya, J. Shah

                   Properties of lattice-matched and strained Indium Gallium Arsenide

                   P.K. Bhattacharya, ed., <st1:city w:st="on"><st1:place w:st="on">London</st1:place></st1:city>, GB, p. 157 (1993)

 

282            Y.L. Chang, I-H. Tan, Y.H. Zahng, D. Bimberg, J. Merz, E. Hu

                   Reduced quantum efficiency of a near-surface quantum well

                   J. Appl. Phys. 74, 5144 (1993)

 

283            H. Scheffler, B. Srocka, A. Dadgar, M. Kuttler, A. Knecht, R. Heitz, D. Bimberg, J.Y. Hyeon, H. Schumann

                   Rh: a dopant with mid gap levels in InP and InGaAs and superior thermal stability

                   Mat. Res. Soc. Symp. Proc. 316, 151 (1993)

 

284            T. Wolf, T. Zinke, A. Krost, D. Bimberg

                   Semi-insulating InP codoped with Fe and Ti: An effective means to suppress the interdiffusion of Fe and p-type dopants

                   Proc. 5th Intern. Conf. on InP and Related Mat., <st1:city w:st="on"><st1:place w:st="on">Paris</st1:place></st1:city> (1993)

 

285            R.F. Schnabel, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Grundmann, T. Wolf, K. Schatke, M. Pilatzek, P. Harde

                   Semi-insulating InP:Fe grown on Si

                   Proc. 5th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Paris</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1993)

 

286            H.M. Cox, D.M. Hwang, M.R. Frei, C. Caneau, M. Grundmann, D. Bimberg

                   Simultaenous planarized selective-area epitaxy of GaxIn1-xAs in normal and dove-tail etched grooves

                   Mat. Res. Soc. Symp. 316, 151 (1993)

 

287            J. Böhrer, A. Krost, D. Bimberg

                   Spatially indirect intersubband transitions of localized electrons and holes at the staggered band lineup In0.52Al0.48As/InP interface

                   J. Vac. Sci. Technol. B 11, 1642 (1993)

 

288            J. Böhrer, A. Krost, D. Bimberg

                   Spatially indirect transitions at the staggered band line-up InAlAs/InP interface

                   Europhys. Conf. Abstr. 17 A, 1656 (1993)

 

289            E.H. Böttcher, F. Hieronymi, D. Kuhl, E. Dröge, D. Bimberg

                   Transient response of lateral photodetectors

                   Appl. Phys. Lett. 62, 18 (1993)

 

290            J. Böhrer, A. Krost, D. Bimberg, M. Helm, G. Bauer

                   Two-dimensional electron and hole states at the staggered band line-up interface of InAlAs/InP

                   Appl. Phys. Lett. 63, 2955 (1993)

 

291            F.Z.Xie, D. Kuhl, E.H. Böttcher, S.Y. Ren, D. Bimberg

                   Wide-band frequency response measurements of photodetectors using low-level photocurrent noise detection

                   J. Appl. Phys. 73, 8641 (1993)

 

292            M. Schell, D. Bimberg, V.A. Bogatyrjov, E.M. Dianov, A.S. Kurkov, V.A. Semenov, A.A. Sysoliatin

                   540 fs light pulses at 1.5 mm with variable repetition rate using a tuneable twin guide laser and solition compression in a dispersion decreasing fiber

                   Techn. Photon. Lett. 6, 1191 (1994)

 

293            M. Grundmann, J. Christen, M. Joschko, D. Bimberg, E. Kapon

                   Bandgap renormalization in quantum wires

                   Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1675 (1994)

 

294            J. Böhrer, A. Krost, D. Bimberg

                   Carrier dynamics in staggered band line-up n-InAlAs/InP heterostructures

                   Appl. Phys. Lett. 64, 1992 (1994)

 

295            A. Krost, N. Esser, H. Selber, J. Christen, D. Bimberg, W. Richter, L.C. Su, G.B. Stringfellow

                   Characterisation of ordered and disordered Ga0.51In0.49P domains by Micro-Raman  spectroscopy

                   J. Cryst. Growth 145, 171 (1994)

 

296            L.C. Su, S.T. Pu, G.B. Stringfellow, J. Christen, H. Selber, D. Bimberg

                   Control of ordering in GaInP and effect on bandgap energy

                   J. Electr. Mat. 23, 125 (1994)

 

297            J. Christen, M. Grundmann, M. Joschko, D. Bimberg, E. Kapon

                   Cooling of 1-dimensional carriers via inter- and Intra-subband relaxation in GaAs quantum wires

                   Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1759 (1994)

 

298            R.F. Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva

                   Defect reduction and strain relaxation mechanismus in InP grown on patterned Si (001)

                   Proc. 6th Intern. Conf. on InP and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 640 (1994)

 

299            M. Kuttler, A. Knecht, D. Bimberg, H. Kräutle

                   Diffusion of ion implanted Ruthenium and Osmium in GaAs and InP

                   Mat. Res. Soc. Symp. Proc. 316, 179 (1994)

 

300            D. Bimberg, A. Dadgar, R. Heitz, M. Kuttler, A. Näser, H. Scheffler, B. Srocka

                   Evidence for Rh2+/3+ deep acceptro levels in InP and In0.53Ga0.47As

                   Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 2387 (1994)

 

301            T. Wolf, T. Zinke, A. Krost, H. Scheffler, H. Ullrich, D. Bimberg, P. Harde

                   Fe- and Ti-doping of InP grown by MOCVD for the fabrication of thermally stable high resistivity layers

                   J. Appl. Phys. 75, 3870 (1994)

 

302            B. Srocka, H. Scheffler, D. Bimberg

                   Fe2+-Fe3+ level as a recombination center in In0.53Ga0.47As

                   Phys. Rev. B 49, 10259 (1994)

 

303            L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, W. Ulrici

                   Fine structure of the (Fe2+(5E), h) bound states in GaP and InP

                   Mat. Sci. For. 143-147, 311 (1994)

 

304            N. Kirstaedter, N.N. Ledentsov, M. Grundmann, M. Schell, D. Bimberg, V.M. Ustinov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov, S.V. Ruvimov, U. Richter, P. Werner, J. Heydenreich

                   First observation of injection laser emission from InAs/GaAs quantum dots

                   14th IEEE Intern. Semicond. Laser Conf., PD2, <st1:state w:st="on"><st1:place w:st="on">Hawaii</st1:place></st1:state> (1994)

 

305            S. Kollakowski, U. Schade, E.H. Böttcher, D. Bimberg

                   Fully passivated AR coated InP/InGaAs MSM photodetectors

                   IEEE Photonics Technol. Lett. 6, 1324 (1994)

 

306            J. Yu, M. Schell, M. Schulze, D. Bimberg

                   Generation of 290 fs mulses at 1.3 mm by hybrid mode-locking of a semiconductor laser and optimization of the time-band-width

                   Appl. Phys. Lett. 65, 2395 (1994)

 

307            D. Huhse, M. Schell, J. Kaessner, D. Bimberg, I.S. Turasov, A.V. Gorbachov, D.Z. Garbuzov

                   Generation of electrically wavelength tunable (Dl = 40 nm) singlemode laser pulses from a 1,3 mm Fabry-Perot laser by self-seeding in a fiber-optic configu­ration

                   Electron. Lett. 30, 157 (1994)

 

308            D. Huhse, M. Schell, W. Utz, J. Kaessner, D. Bimberg

                   Generation of low jitter (210 fs) single mode pulses from a 1,3 mm Fabry-Perot-laser diode by self-seeding

                   Proc. 20th European Conference on Optical Communication (ECOC), <st1:place w:st="on"><st1:city w:st="on">Firenze</st1:city>, <st1:country-region w:st="on">Italy</st1:country-region></st1:place>, p. 467 (1994)

 

309            R. F. Schnabel, M. Grundmann, R. Engelhardt, D. Bimberg, H. Cerva

                   High quantum efficiency InP-mesas grown by LPE on InP/Si

                   Proc. 6th Intern. Conf. on InP and Related Mat., <st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on"><st1:place w:st="on">USA</st1:place></st1:country-region> PDB2 (1994)

 

310            E. Dröge, R.F. Schnabel, E.H. Böttcher, M. Grundmann, A. Krost, D. Bimberg

                   High-speed InGaAs on Si metal-semiconductor-metal photodetectors

                   Electr. Lett. 30, 1348 (1994)

 

311            A. Krost, N. Esser, H. Selber, J. Christen, W. Richter, D. Bimberg, L.C. Su, L.B. Stringfellow

                   Identification of ordered and disordered Ga0.51In0.49P domains by spatially resolved luminescence and Raman spectroscopy

                   J. Vac. Sci. Techn. B 12, 2558 (1994)

 

312            H. Scheffler, A. Dadgar, B. Srocka, M. Kuttler, D. Bimberg

                   Identification of the deep Ti donor level in InAlAs

                   Proc. 6th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 303 (1994)

 

313            U. Schade, S. Kollakowski, E.H. Böttcher, D. Bimberg

                   Improved performance of large-area InP/InGaAs MSM photodetectors by sulfur passivation

                   Appl. Phys. Lett. 64, 1389 (1994)

 

314            D. Bimberg, B. Srocka

                   Impurity levels in InGaAs properties of InGaAs

                   Properties of InGaAs, EMIS Data Review Series (P. Bhattacharya, ed.) (1994)

 

315            J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, I. Broser

                   Inequivalence of staggered interfaces in InAlAs/InP multiquantum well structures

                   Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 695 (1994)

 

316            J. Christen, E. Kapon, M. Grundmann, M. Walther, D. Bimberg

                   InGaAs strained quantum wire structures: optical properties and laser applications

                   Jpn. J. Appl. Phys. S-I-6-1, 66 (1994)

 

317            A. Krost, F. Heinrichsdorff, D. Bimberg, H. Cerva

                   InP on Si(111): Accommodation of lattice mismatch and structural properties

                   Appl. Phys. Lett. 64, 769 (1994)

 

318            D. Bimberg, J. Böhrer, A. Krost

                   Large oscillator strength of spatially indirect e-h recombination at type II heterojunctions: The InAlAs/InP case

                   J. Vac. Sci. Technol. A12, 1039 (1994)

 

319            F. Hieronymi, E.H. Böttcher, E. Dröge, D. Kuhl, S. Kollakowski, D. Bimberg

                   Large-area low-capacitance InP/InGaAs MSM photodetectors for high-speed operation under front and rear illumination

                   Electr. Lett. 30, 1247 (1994)

 

320            M. Schell, W. Utz, D. Huhse, J. Kaessner, D. Bimberg

                   Low Jitter single-mode-pulse generation by a self-seeded, gain-switched Fabry-Pérot semiconductor laser

                   Appl. Phys. Lett. 65, 3045 (1994)

 

321            N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop‘ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich

                   Low threshold, large To injection laser emission from (InGa)As quantum dots

                   Electr. Lett. 30, 1416 (1994)

 

322            N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg

                   Luminescence and structural properties of (In, Ga)As/GaAs quantum dots

                   Proc. 22nd Intern. Conf. Phys. Semic. <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1855 (1994)

 

323            T. Wolf, W. Ulrich, D. Côte, B. Clerjaud, D. Bimberg

                   New evidence for bound states in the charge transfer spectra of TM doped III-V-semiconductors

                   Mat. Sci. Forum 143-147, 317 (1994)

 

324            B. Srocka, H. Scheffler, D. Bimberg

                   Observation of Rhodium- and Iridium-related deep levels in In0.53Ga0.47As

                   Proc. 6th Intern. Conf. on InP and Related Mat., <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 110 (1994)

 

325            A. Krost, F. Heinrichsdorff, R.F. Schnabel, K. Schatke, D. Bimberg, H. Cerva

                   Optical and crystallographic properties of high perfection InP grown on Si(111)

                   J. Electr. Mat. 23, 135 (1994)

 

326            P.C. van Son, J. Cere, M.S. Sherwin, S.J. Allen jr., M. Sundaram, I.-H. Tan, D. Bimberg

                   Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures

                   Nuclear Instruments & Methods in Physics Research A 341, 174 (1994)

 

327            D. Bimberg, B. Srocka

                   Photoluminescence of pure InGaAs-Alloys

                   Properties of InGaAs, EMIS Data Review Series (P. Bhattacharya, ed.) (1994)

 

328            M. Schell, D. Huhse, D. Bimberg

                   Picosecond pulse generation with a 1.55 mm tunable guide laser using blue-chirp compression

                   Appl. Phys. Lett. 64, 1923 (1994)

 

329            M. Grundmann, O. Stier, J. Christen, D. Bimberg

                   Pseudomorphic quantum wires: symmetry breaking due to structural, strain and piezoelectric field induced confinement

                   Superlatt. Microstr. 16, 249 (1994)

 

330            M. Grundmann, J. Christen, V. Tuerck, E. Kapon, R. Bhat, C. Caneau, D.M. Hwang, D. Bimberg

                   Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates

                   <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Electronics 37, 1097 (1994)

 

331            M. Grundmann, J. Christen, M. Joschko, O. Stier, D. Bimberg, E. Kapon

                   Recombination Kinetics and intersubband relaxation in semiconductor quantum wires

                   Semic. Sci. Technol. 9, 1939 (1994)

 

332            B. Srocka, H. Scheffler, D. Bimberg

                   Rhodium- and Iridium-related deep levels in In0.53Ga0.47As

                   Appl. Phys. Lett. 64, 2679 (1994)

 

333            J. Böhrer, A. Krost, D. Bimberg

                   Spatially indirect electronic transitions at the staggered band line-up InAlAs/InP interface

                   Proc. 4th Intern. Conf. on the Formation of Semic. Interfaces, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 660 (1994)

 

334            M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg

                   Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging

                   J. Electr. Mat. 23, 201 (1994)

 

335            M. Grundmann, V. Tuerck, J. Christen, R.F. Schnabel, O. Stier, D. Bimberg, E. Kapon, D.M. Hwang, C. Caneau, R. Bhat

                   Strained InGaAs/GaAs quantum wires: Modelling and optical properties

                   Proc. 6th Intern. Conf. on InP and Related Materials, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 451 (1994)

 

336            D.Z. Garbuzov, V.P. Evtikhiev, N.I. Katsavets, A.B. Komissarov, T.E. Kudrik, I.V. Kudryashov, V.B. Khalfin, R.K. Bauer, ZHI. Alferov, D. Bimberg

                   Study of radiative recombination efficiency in MBW grown, 28-180 Å wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

                   J. Appl. Phys. 75, 4152 (1994)

 

337            H. Hillmer, S. Hausmann, H. Burkhard, H. Walter, A. Krost, D. Bimberg

                   Study of wavelength shift in InGaAs/InAlGaAs QW DFB lasers based on laser parameters from a comparison of experiment and theory

                   IEEE J. Quant Electr. 30, 2251 (1994)

 

338            M. Grundmann, O. Stier, D. Bimberg

                   Symmetry breaking in pseudomorphic V-groove quantum wires

                   Phys. Rev. B 15, 14187 (1994)

 

339            M. Grundmann, A. Krost, D. Bimberg, H. Cerva

                   The formation of interfaces and crystal defects: A case study of InGaAs QWs on InP/Si (001)

                   Proc. ICFSI-4, World Scientific, <st1:country-region w:st="on"><st1:place w:st="on">Singapore</st1:place></st1:country-region>, p. 530 (1994)

 

340            N.N. Ledentsov, F. Heinrichsdorff, M. Grundmann, D. Bimberg

                   Type II heterostructures based on GaSb sheets in GaAs matrix

                   Proc. 22nd Intern. Conf. Phys. Semic., <st1:place w:st="on"><st1:city w:st="on">Vancouver</st1:city>, <st1:country-region w:st="on">Canada</st1:country-region></st1:place>, p. 1616 (1994)

 

341            D. Bimberg, E.H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, S. Kollakowski, U. Schade

                   Ultra-fast InP:Fe/InGaAs:Fe/InP:Fe MSM photodetectors

            Halbleiter für die Optoelektronik und Photonik, A. Dörnen et al. (eds.), Verlag Hänsel-Hohenhausen, Egelsbach, p. 283 (1994)

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