direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Page Content

There is no English translation for this web page.

Publikationen 2017 - 2018

Resonance profiles of valley polarization in single-layer Mos2 and MoSe2
H. Tornatzky, A. Kaulitz, J. Maultzsch
Physical Review Letters 121 (2018) 167401
Paper [1]

Strain Engineering in InP/(Zn,Cd)Se Core/Shell Quantum Dots
M. Rafipoor, D. Dupont, H. Tornatzky, M.D. Tessier, J. Maultzsch, Z. Hens, H. Lange
Chemistry of Materials 30 (13) (2018) 4393-4400
Paper [2]

Suppression of the quantum-confined Stark effect in polar nitride heterostructures
S. Schlichting, G.M.O. Hönig, J. Müßener, P. Hille, T. Grieb, S. Westerkamp, J. Teubert, J. Schörmann, M.R. Wagner, A. Rosenauer, M. Eickhoff, A. Hoffmann, G. Callsen
Communications Physics 1 (2018) 48
Paper [3]

Auger recombination in AlGaN quantum wells for UV light-emitting diodes
F. Nippert, M.T. Mazraehno, M. Davies, M.P. Hoffmann, H.-J. Lugauer, T. Kure, M. Kneissl, A. Hoffmann, M.R. Wagner
Applied Physics Letters 113 (2018) 071107
Paper [4]

Synthesis and Characterization of Nanotubes from Misfit (LnS)1+yTaS2 (Ln=Pr, Sm, Gd, Yb) Compounds
M. Serra, D. Stolovas, L. Houben, R. Popovitz-Biro, I. Pinkas, F. Kampmann, J. Maultzsch, E. Joslevich, R. Tenne
Chemistry - A European Journal 24 (2018) 11354-11363
Paper [5]

Double-resonant Raman-scattering with optical and acoustic phonons in carbon nanotubes
C. Tyborski, A. Vierck, R. Narula, V.N. Popov, J. Maultzsch
Physical Review B 97 (2018) 214306
Paper [6]

Electronic excitations stabilized by a degenerate electron gas in semiconductors
C. Nenstiel, G. Callsen, F. Nippert, T. Kure, S. Schlichting, N. Jankowski, M.P. Hoffmann, A. Dadgar, S. Fritze, A. Krost, M.R. Wagner, A. Hoffmann, F. Bechstedt
Communications Physics 1 (2018) 38
Paper [7]

Crystallisation behaviour of CH3NH3PbI3 films: The benefits of sub-second flash lamp annealing
R. Muydinov, S. Seeger, S.H.B.V.Kumar, C. Klimm, R. Kraehnert, M.R. Wagner, B. Szyszka
Thin Solid Films 653 (2018) 204-214
Paper [8]

Point-Defect Nature of the Ultraviolet Absorption Band in AlN
D. Alden, J.S. Harris, Z. Bryan, J.N. Baker, P. Reddy, S. Mita, G. Callsen, A. Hoffmann, D.L. Irving, R. Collazo, Z. Sitar
Physical Review Applied 9 (5) (2018) 054036
Paper [9]

Tunable quantum interference in bilayer graphene in double-resonant Raman scattering
F. Herziger, C. Tyborski, O. Ochedowski, M. Schleberger, J. Maultzsch
Carbon 133 (2018) 254-259
Paper [10]

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.26N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, DJ As
Physica Status Solidi B - Basic Solid State Physics 255 (5) (2018) 1700373
Paper [11]

Optical Emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template
j. Muessener, LAT Greif, S. Kalinowski, G. Callsen, P. Hille, J. Schormann, MR Wagner, A. Schliwa, S. Marti-Sanchez, J. Arbiol, A. Hoffmann, M. Eickhoff
Nanoscale 10 (12) (2018) 5591-5598
Paper [12]

A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities
S. Jagsch, NV Trivino, F. Lohof, G. Callsen, S. Kalinowski, IM Rousseau, R. Barzel, JF Carlin, F. Jahnke, R. Butte, C. Gies, A. Hoffmann, N. Grandjean, S. Reitzenstein
Nature Communications 9 (2018) 564
Paper [13]

Breakdown of Fal-Field Raman Selection Rules by Light-Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering
E. Poliani, MR. Wagner, A. Vierck, F. Herziger, C. Nenstiel, F. Gannott, M. Schweiger, S. Fritze,, A. Dadgar, J. Zaumsei, A. Krost, A. Hoffmann, J. Maultzsch
Journal of Physical Chemical Letters 8 (22) (2017) 5462-5471
Paper [14]

Carbon doped GaN layers grown by Pseudo-Halide Vapour Physe Epitaxy
D. Siche, R. Swierz, K. Kachel, N. Jankowski, C. Nenstiel, G. Callsen, M. Bickermann, A. Hoffmann
Crystal Research and Technology 52 (8) (2017) 1600364
Paper [15]

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements
I. Reklaitis, F. Nippert, R. Kudzma, T. Malinauskas, S. Karpov, I. Pietzonka, H.J. Lugauer, M. Strassburg, P. Vitta, R. Tomasiunas, A. Hoffmann
Journal of Applied Physics 121 (3) (2017) 035701
Paper [16]
Charge state switching of Cu acceptors in ZnO nanorods
M.A. Rahman, MT Westerhausen, C. Nenstiel, S. Choi, A. Hoffmann, A. Gentle, MR. Phillips, C. Thon-That
Applied Physics Letters 110 (12) (2016), 121907
Paper [17]

Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires

F. Mohammadbeigi, T. Kure, G. Callsen, ES Kumar, MR Wagner, A. Hoffmann, SP Watkins
Semiconductor Science and Technology 32 (4) (2017), 045017
Paper [18]

------ Links: ------

Zusatzinformationen / Extras

Quick Access:

Schnellnavigation zur Seite über Nummerneingabe

This site uses Matomo for anonymized webanalysis. Visit Data Privacy for more information and opt-out options.
Copyright TU Berlin 2008