Publikationen 2001 - 1999

Influence of electron irradiation on carrier recombination and intradot relaxation in InGaAs/GaAs quantum dot structures
N.V. Sobolev, A. Covaco, C. Carmo, H. Born, M. Grundmann, F. Heinrichsdorff, R. Heitz, A. Hoffmann, D. Bimberg
Physics, Chemistry and Application of Nanostructures (2001), p.146
paper [1]

Effective medium approach for planar QD structures
G. Ya Slepyan, S.A. Maksimenko, V.P. Kalosha, A. Hoffmann, D. Bimberg
Proceedings of the 9^th International Symposium "Nanostructures:
Physics and Technology", Ioffe Institute, St. Petersburg, Russia, June 2001, p. 331
paper [2]

Effective boundary conditions for planar quantum dot structures
G. Ya Slepyan, S.A. Maksimenko, V.P. Kalosha, A. Hoffmann, D. Bimberg
Phys. Rev. B 64 (2001), 125326
paper [3]

Existence of a phonon-bottleneck for excitons in quantum dots
R. Heitz, H. Born, O. Stier, A. Schliwa, A. Hoffmann, D. Bimberg
Rapid Phys. Rev. 64 (2001, 241305
paper [4]

Radiative recombination in type II GaSb/GaAs quantum dots
H. Born, L. Müller-Kirsch, R. Heitz, A. Hoffmann, D. Bimberg
phys. stat. sol. (b) 228 (2001), R 4
paper [5]

Stress distribution in cracked AlGaN layers grown by MBE determined by spatially and spectrally resolved cathodoluminescence and micro-Raman spectroscopy
D. Rudloff, T. Riemann, J. Christen, Q.K.K. Liu, K. Vogeler, S. Einfeldt, D. Hommel, A. Kaschner, A. Hoffmann, C. Thomsen
Appl. Phys. Lett. xxx (2001),

Growth of high quality InGaAsN heterostructures and their laser applications
Yu Egorov, D. Bernklau, B. Borchert, S. Illek, D. Livshits, A. Rucki, M. Schuster,
A. Kaschner, A. Hoffmann, Gh. Dumitras, M.C. Amman, H. Riechert
J. Cryst. Growth 227-228, (2001), 545
paper [6]
 
Energy levels of native defects in zinc germanium diphosphide
W. Gelhoff, R.N. Pereira, D. Azamat, A. Hoffmann, N.N. Dietz
Physica B 308-310 (2001), 1015
paper [7]

Redistribution of localized excitons in CdSe/ZnSe quanfum dot structures
M. Straßburg, M. Dworzak, R. Heitz, A. Hoffmann, J. Christen, D. Schikorra
Materials Science and Engineering B 88 (2001), 302
paper [8]

Three-dimensional imaging og ELOG growth domains by scanning cathodoluminescence tomography
T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, M. Seyboth, F. Habel, R. Beccard, M. Heuken
phys. stat. sol. (b) 188 (2001), 751
paper [9]

Effect of growth condition on self-organized nanostructure formation in ultrathin InGaN insertions in a GaN matrix grown by MOCVD
Yu.G. Musikhin, D. Gerthsen, D.A. Bedarev, N.A. Bert, A.F. Tsatsuknikov, A.V. Sakharov, A.S. Usikov, I.L.Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Appl. Phys. Lett. 80 (2001), 2099

Group III Nitrides 
Guest Editors: A. Hoffmann, B. Gil, K. Hiramatsu, K.P. O’Donnell, St. P. Den Baars
Proceeding of Symposium C on Groupe III Nitrides of the EMRS 200 Spring
Confrence Materials Science and Engineering B 52 (2001) 1
paper [10]

Entropy-driven effects in self-organized formation of quantum dots
V.A. Shukin, N.N. Ledentsov, A. Hoffmann, D. Bimberg, I.P. Soshnikov, B.V. Volovik,
V.M. Ustinov, D. Litvinov, D. Gerthsen
phys. stat. sol. (b) 224 (2001), 503
paper [11]

Resonant Raman scattering on free and bound excitons in GaN
A. Kaschner, A. Hoffmann, C. Thomsen
Phys. Rev. B 64 (2001), 165314
paper [12]

Free excitons in wurtzite GaN-Fine structure and magnetoopticsof the A exciton
V. Rodina, M. Dietrich, A. Goeldner, L. Eckey, A. Hoffmann, Al. L. Efros, M. Rosen, B.K. Meyer
Phys. Rev. B 64 (2001), 115204
paper [13]

Size and shape effects in electromagnetic responce of quantum dots and quantum arrays
S.A. Maksimenko, G. Ya Slepyan, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Materials Science and Engineering B 82 (2001), 215
paper [14]

Recombination mechanisms in GaInNAs multiple quantum wells
A. Kaschner, T. Lüttgert, H. Born, A. Hoffmann, A.Y. Egorov, H. Riechert
Appl. Phys. Lett. 78 2001, 1391
paper [15]

Raman scattering in resonance with acceptor bound exciton in GaN
A. Kaschner, A. Hoffmann, C. Thomsen
phys. stat. sol. (b) 223 (2001), R 11
paper [16]

Optical and structural properties of quantum dots in wide-bandgap semiconductors
M. Straßburg, A. Hoffmann, I. Krestnikov, N.N. Ledentsov
phys. stat. sol. (a) 183 (2001), 99
paper [17]

Temperature and pressure dependence of Mg local modes in GaN
G. Kaczmarczyk, A. Kaschner, A. Hoffmann, and C. Thomsen
Appl. Phys. Lett., 78 (2001), 198
paper [18]

Suppressed relaxation in InGaAs/GaAs quantum dots
H. Born, R. Heitz, A. Hoffmann, F. Guffarth, D. Bimberg
phys. stat. sol. (b) 224 (2000), 487
paper [19]

Local stress analysis of epitaxial laterally-overgrown GaN
Q. Liu, A. Hoffmann, A. Kaschner, C. Thomsen, J. Christen, P. Veit, R. Clos
Jpn. J. Appl. Phys. 39 (2000), L 958
paper [20]

Arrays of two dimensional islands formed by submonolayer insertions: growth, properties, devices
I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
phys. stat. sol. (a) 183 (2000), 207
paper [21]

Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanow mode
M. Straßburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, and D. Schikora
phys. stat. sol. (a) 180 (2000), 281
paper [22]

Resonant Raman scattering in self-organized InAs/GaAs quantum dots
R. Heitz, H. Born, I. Mukhametzhanov, A. Hoffmann, A. Madhukas, D. Bimberg
Appl. Phys. Lett. 77 (2000), 3746
paper [23]

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
A.F. Tsatsul’nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh. I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut
Semicond. Sci. Technol. 15 (2000), 766
paper [24]

Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanow mode
M. Straßburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, and D. Schikora
phys. stat. sol. (a) 180 (2000), 281
paper [25]

Time-resolved studies of large InGaAs/GaAs quantum dots
I.L. Krestnikov, H. Born, T. Lüttgert, R. Heitz, A.F. Tsatsul'nikov, B.V. Volovik, M.V. Maximov, A.R. Kovsik, N.A. Maleev, A.F. Zhukov, V.M. Ustinov, N.N. Ledentsov, A. Hoffmann, Zh. I. Alferov, D. Bimberg
Proceedings of 25th Conf. Phys. Semicond., Osaka 2000 (eds. Miura and T. Ando) 1241
paper [26]

Comparison of different epitaxial lateral overgrowth GaN structures using SiO2 and tungsten mask by cathodoluminescence spectroscopy and micro Raman  spectroscopy
F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen K. Hiramatsu, H. Sone, N. Sawaki
Mat. Science Forum 338-343 (2000), 1483
paper [27]

Influence of thick GaN buffer growths conditions on the electroluminescence properties of GaN/InGaN multilayer heterostructures
A.S. Usikov, W.V. Lundin, D. A. Bedarev, E.E. Zavarin, A.V. Sakharov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Proc. of Int. Workshop on Nitride Semiconductors (2000), IPAP Conf. Ser. 1, p. 875
paper [28]

Spatially resolved spectroscopy at micro-cracks In AlGaN layers
D. Rudloff, T. Riemann, J. Christen, K. Vogeler, S. Einfeldt, D. Hommel, A. Kaschner, A. Hoffmann, C. Christen
Proc. of Int. Workshop on Nitride Semiconductors (2000), IPAP Conf. Ser. 1, p.475
paper [29]

Cathodoluminecence microscopy and micro-Raman spectroscopy of growth domains formed during epitaxial lateral overgrowth of GaN
T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, O. Parillaud, V. Wagner, M. Ilegems
Proc. of Int. Workshop on Nitride Semiconductors (2000), IPAP Conf. Ser. 1, p. 280
paper [30]

Influence of growth interruptions and gas ambient on optical and structural properties of InGaN/GaN multilayer structures
V. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A. Bedarev, A.F. Tsatsul’nikovA.S. Usikov, Zh. I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
IPAP Conf. Ser. 1, Proc. of Int. Workshop on Nitride Semiconductors (2000), p.241
paper [31]

Shape-dependent phonon bottleneck in InGaAs/GaAs quantum dots
R. Heitz, H. Born, A. Hoffmann, F. Guffarth, D. Bimberg
Proceedings of 25^th Conf. Phys. Semicond., Osaka (2000) eds. Miura and T. Ando 1167
paper [32]

Time-resolved studies and high-excitation properties of CdSe/ZnSe quantum dots
M. Straßburg, V. Kutzer, M. Dworzak, A. Hoffmann, R. Heitz, D. Bimberg, I. Kudryashov, K. Lischka, D. Schikora
Proceedings of 25^th Conf. Phys. Semicond., Osaka 2000 (eds.s.Miura and T. Ando), 1323
paper [33]

Formation of GaAsN nanoinsertions in a GaN matrix
A.F. Tsatsul’nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, B.Ya. Ber, V.V. Tret’yakov, Zh. I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu. G. Musikhin, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut
Proceedings of 25^th Conf. Phys. Semicond., Osaka (2000) eds. Miura and T. Ando, 395
paper [34]

Native defect characterization in ZnGeP₂
A. Hoffmann, H. Born, A. Näser, W. Gehlhoff, J. Maffetone, D. Perlov, W. Rudermann, I. Zwieback, N. Dietz, K.J. Bachmann,
Mat. Res. Soc. Symp. Proc. 607, (2000), 373
paper [35]

Lasing in vertical direction in structures with InGaN quantum dots
I.L Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usihov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, J. Holst, A. Hoffmann, D.Bimberg
phys. stat. sol. (a) 180 (2000), 91
paper [36]

Correlation between the structural and optical amplifiction in InGaN/GaN heterostructures grown by molecular beam epitaxy
A. Kaschner, J. Holst, U. Gfug, A. Hoffmann, F. Bertram, T. Riemann, D. Rudloff, P. Fischer, J. Christen, R. Averbeck, H. Riechert
MRS Internet Journal of Nitride Semiconductor Research, 5S1, Boston (USA) (2000), W 11.34
paper [37]

Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD
J. Holst, A. Kaschner, U. Gfug, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, D. Rudloff, P. Fischer, J. Christen, R. Averbeck, H. Riechert, M. Heuken, M. Schwambera, and O. Schön
phys. stat. sol. (a) 180 (2000), 327
paper [38]

Evidence for phase separation in InGaN by resonant Raman scattering
A. Kaschner, A. Hoffmann, C. Thomsen, T. Böttcher, S. Einfeldt, and D. Hommel
phys. stat. sol. (a) 179, (2000) R4
paper [39]

Lasing in vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
I.L. Krestnikov, A.V. Sakharov, W.N. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, P. Soshnikov, E. Hahn, B. Neugebauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A. Hoffmann, D. Bimberg
Semiconductors 34 (2000), 481
paper [40]

Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots
R. Heitz, H, Born, T. Lüttgert, A. Hoffmann, D. Bimberg
phys. stat. sol. (b) 221 (2000), 65
paper [41]

Lattice dynamics of hexagonal and cubic InN: Raman scattering experiments and calculations
G. Kaczmarczyk, A. Kaschner, S. Reich, A. Hoffmann, C. Thomsen, D.J. As, A.P. Lima, D. Schikora, K. Lischka, R. Averbeck, H. Riechert
Appl. Phys. Lett. 76 (2000), 2122
paper [42]

Impact of epitaxial lateral overgrowth on the recombination dynamcs in GaN determined by time resolved micro-photoluminescence spectroscopy
J. Holst, A. Kaschner, A. Hoffmann, I. Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, N. Sawaki
Mat. Science Forum 338-343 (2000), 1575
paper [43]

Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/GaAs quantum dots
A.R. Goñi, H. Born, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg
Jpn. J. Appl. Phys. 39 (2000), 3907
paper [44]

Time resolved micro-photoluminescence of epitaxial laterally overgrown GaN
A. Kaschner, J. Holst, A. Hoffmann, I Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, N. Sawaki
J. Lumin 87/89 (2000), 1192
paper [45]

A comparison of Hall effect and secondary ion mass spectroscopy on shallow oxygen donor in untentionally doped GaN films
D. Meister, M. Topf, W. Kriegeis, W. Burkhardt, I. Dirnstorfer, S. Rösel, B. Farangis, A. Hoffmann, S. Siegle; C. Thomsen, C. Christen, F. Bertram
J. Appl. Phys. 88 (2000), 1811
paper [46]

Temporal evolution of resonant Raman-scattering effect from ZnCdSe quantum dots
A. Kaschner, M. Strassburg, A. Hoffmann, C. Thomsen, M. Bartels, K. Lischka, and D. Schikora
Appl. Phys. Lett. 76 (2000), 2662
paper [47]

Quantum Island formation in CdS/ZnS heterostructures grown by MOVPE
C. Meyne, U.W. Pohl, W. Richter, M. Straßburg, A. Hoffmann, V. Türck, S. Rodt, D. Bimberg, D. Gerthsen
J. Cryst. Growth 214/215 (2000), 722
paper [48]

Investigation on the formation kinetics of CdSe Quantum Dots
D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer,
D. Gerthsen, M. Straßburg, Th. Deniozou, D. Bimberg, A. Hoffmann
J. Cryst. Growth 214/215 (2000), 698
paper [49]

Optical identification of quantum dot types in CdSe/ZnSe structures
M. Straßburg, Th. Deniozou, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, S. Schwedhelm, K. Lischka, D. Schikora
J. Cryst. Growth 214/215 (2000), 756
paper [50]

Quantum dots formed by ultrathin insertions in wide gap matrices
N.N. Ledentsov, I.L. Krestnikov, M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen
Thin solid films 367 (2000), 40
paper [51]

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A new method to map the free-carrier concentration of thick
GaN samples
A. Kaschner, A. Hoffmann, C. Thomsen F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, H. Sone, N. Sawaki
Appl. Phys. Lett. 76 (2000), 3418
paper [52]

Crystalline and optical properties of ELO GaN by HVPE using tungsten mask
K. Hiramatsu, A. Motogaito, H. Miyake, Y. Iyechika, F. Bertram, J. Christen, A. Hoffmann
IEICE transactions on electronics Vol. E83-C (2000) 626
paper [53]

The origin of optical gain in cubic InGaN grown by molecular beam epitaxy
J. Holst, A. Hoffmann, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D.J. As, C. Schikora, K. Lischka
Appl. Phys. Lett. 76 (2000), 2832
paper [54]

Electromagnetic response of 3D arrays of quantum dots
S.A. Maksimenko, G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A. Hoffmann, and D. Bimberg
J. of Electronic Materials 29 (2000), 494
paper [55]

Ligh confinement in a quantum dot
S.A. Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, and D. Bimberg
Semicond. Sci. Technol. 15 (2000), 491
paper [56]

Investigations on the Stranski-Krastanow growth of CdSe quantum dots
D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg
Appl. Phys. Lett. 76 (2000), 418.
paper [57]

Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures
M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, D. Schikora
Appl. Phys. Lett. 76 (2000), 685.
paper [58]

Impurity-induced modes Mg, As, Si, and C in heagonal and cubic GaN
G. Kaczmarczyk, A. Kaschner, A. Hoffmann, C. Thomsen
Phys. Rev. B 61 (2000), 5353
paper [59]

Effect of annealing on phase separation in ternary III-V alloys
A.V. Sakharov, W.V. Lundin, I.L Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
Proceedings of the 8^th International Symposium „Nanostructures: Physics and Technology",
Ioffe Institute, St. Petersburg, Russia, (June 2000), 216
paper [60]

Light confinement in quantum dots
S. A. Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, D. Bimberg
Proceedings of the 8^th International Symposium „Nanostructures: Physics and Technology",
Ioffe Institute, St. Petersburg, Russia, June 2000, p. 219
paper [61]

The third international conference on Nitride semiconductors (ICNS '99)
Proceedings (Part A): Growth and device applications of Group-III-nitrides
Guest Editor: A. Hoffmann, P. Lefebvre
phys. stat. sol. (a) Vol. 176 (1999) Wiley-VCH
paper [62]

The third international conference on Nitride semiconductors (ICNS '99)
Proceedings (Part B): Optical, structural and electrical properties of group-III nitrides
Guest Editor: A. Hoffmann, P. Lefebvre
phys. stat. sol. (b) Vol. 216 (1999) Wiley-VCH
paper [63]

Hot carrier relaxation in InAs/GaAs quantum dots
R. Heitz, I. Mukhametzanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg
Physica B 272 (1999), 8.
paper [64]

Vertical cavity surface-emitting lasers using InGaN quantum dots
N.N. Ledentsov, I.L Krstinov, W.V. Lundin, A.V. Sakharow, I. Soshnikov, A.F. Tsatsul'nikov, A. Hoffmann, D. Bimberg
Compound Semiconductor 5 (1999), 1
paper [65]

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN
J. Holst, A. Kaschner, A. Hoffmann, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu
Appl. Phys. Lett. 75 (1999), 3647
paper [66]

Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures
T. Frey, D.J. As, K. Lischka, J. Holst, A. Hoffmann
phys. stat. sol. (b) 216 (1999), 259
paper [67]

Photoluminescence investigations of AlGaN on GaN epitaxial films
B.K. Meyer, G. Steude, A. Göldner, A. Hoffmann, H. Amano, I. Akasaki
phys. stat sol. (b) 216 (1999), 187
paper [68]

Impact of structural properties on the mechanisms of optical amplification in cubic InGaN
J. Holst, A. Hoffmann, I. Broser, F. Bertram, T. Riemann, J. Christen, D.J. As, D. Schikora, B. Schoettker, and K. Lischka
phys. stat sol. (b) 216 (1999), 471
paper [69]

Exciton energy structure in wurtzite GaN
A.V. Rodina, L. Eckey, M. Dietrich, A. Göldner, Al.L. Efros, M. Rosen, A. Hoffmann, and B.K. Meyer
phys. stat sol. (b) 216 (1999), 21
paper [70]

Defect complexes in highly Mg-doped GaN studied by Raman spectroscopy
A. Kaschner,G. Kaczmarczyk, A. Hoffmann,C. Thomsen,U. Birkle, S.Einfeldt, D. Hommel
phys. stat sol. (b) 216 (1999), 551
paper [71]

Optical properties of structures with single and multiple InGa insertions in a GaN matrix
A.V. Sakharow, W.V. Lundin, I.L Krstinov, , V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg
phys. stat sol. (b) 216 (1999), 435
paper [72]

Photo-pumped InGaN/AIGaN vertical cavity surface emitting laser operating at room temperature
I.L Krstinov, W.V. Lundin, A.V. Sakharow, V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, A. Hoffmann, Zh.I. Alferov, D. Bimberg
phys. stat sol. (b) 216 (1999), 511
paper [73]

Surface-mode lasing from optically pumped InGaN/Ga heterostructures
A.V. Sakharov, W.V. Lundin, V.A. Semenow, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul'nikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg
Proceedings of the 7th International Symposium "Nanostructures: Physics and Technology", Ioffe Institute,
St. Petersburg, Russia, (June 1999P), p. 124
paper [74]

Quantum dots form formed by ultrathin CdSe-ZnSe insertions
M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, I.L. Krestnikov, N.N. Ledentsov, Zh.I. Alferov, D. Litvinow, A. Rosenbauer, and D. Gerthsen
Proceedings of the 7th International Symposium "Nanostructures: Physics
and Technology", Ioffe Institute, St. Petersburg, Russia, (June 1999),p. 13-19
paper [75]
 
Magnetoluminescence of annealed self-organized InGaAs/GaAs quantum dots
H. Born, A.R. Goñi, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg
phys. stat sol. (b) 215 (1999), 313
paper [76]

Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices
M. Straßburg, R. Heitz, V. Türck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, I.L. Krestnikov, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen
J. Electronic Materials (special issue: Quantum Dots) 28 (1999), 506
paper [77]

Temperature-dependent optical properties of self-organized InAs/GaAs quantum dots
R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg
J. Electronic Materials (special issue: Quantum Dots) 28 (1999), 520
paper [78]
 
Surface-mode lasing from stacked InGaN insertions in a GaN matrix
A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenow, A.S. Usikov, A.F. Tsatsul'nikov, Yu.G. Musihin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
Appl. Phys. Lett. 74 (1999), 3921
paper [79]

Optical investigations of AlGaN on GaN epitaxial films
G. Steude, B.K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, I. Akasaki
Appl. Phys. Lett. 74 (1999), 2456
paper [80]

Strain modification of GaN in AlGaN/GaN epitaxial films
G. Steude, B.K. Meyer, A. Göldner, A. Hoffmann, A. Kaschner, F. Bechstedt, H. Amano, I. Akasaki
Jap. Journal Appl. Phys. 38 (1999), L498
paper [81]

Optical gain and stimulated emission of cleaved cubic GaN
J. Holst, A. Hoffmann, I. Broser, T. Frey, D.J. As, D. Schikora, K. Lischka
Appl. Phys. Lett. 74 (1999), 1966
paper [82]

Local-vibrational modes in Mg-doped GaN grown by MBE
A. Kaschner, H. Siegle, M. Straßburg, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel
Appl. Phys. Lett. 74 (1999), 3281
paper [83]

Excitonic recombination in strained Al_xGa_1-xN on GaN
G. Steude, D.M. Hofmann, T. Christmann, A. Ekimov, B.K. Meyer, F. Bertram, J. Christen, A. Göldner, A. Hoffmann
Material Research Soc. Internet Journal of Nitride Semiconductor Research,
4S1, Boston (USA) (1998), G3.26 Material Research Society Symposium 537

Influence of doping on the lattice dynamics GaN
A. Kaschner, H. Siegle, A. Hoffmann, C. Thomsen, U. Birkle, S. Einfeldt, D. Hommel
Material Research Soc. Internet Journal of Nitride Semiconductor Research,
4S1, Boston (USA) (1999), G3.57 Material Research Society Symposium 537
paper [84]

Mechanisms of optical gain in cubic GaN and InGaN
J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D.J. As, D. Schikora, K. Lischka
Material Research Soc. Internet Journal of Nitride Semiconductor Research,
4S1, Boston (USA) (1999), G2.3, Material Research Society Symposium 537,
paper [85]

Optical microscopy of the electronic and structural properties of epitaxial lateral overgrowth GaN
A. Kaschner, A. Hoffmann, C. Thomsen, F. Bertram, T. Riemann, J. Christen,
K. Hiramatsu, T. Shibata, N. Sawaki.
Appl. Phys. Lett. 74 (1999), 3320
paper [86]

Microcalorimetric absorption spectroscopy in GaN-AlGaN quantum-wells
A. Göldner, A. Hoffmann, B. Gil, P. Lefebvre, P. Bingenwald, P. Christol, H. Morkoc
Mat. Science & Engineering B 59 (1999), 319
paper [87]

Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates
W.V. Lundin, A.S. Usikov, A.V. Sakharov, V.V. Tretyakov, D.V. Poloskin,N.N. Ledentsov, A. Hoffmann
phys. stat. sol (a) 176 (1999), 379
paper [88]

Impact of the ZnO buffer on the optical proerties of GaN: Time-resolved micro-photoluminescence
A. Hoffmann, J. Holst, A. Kaschner, H. Siegle, J. Christen, P. Fischer, F. Bertram, K. Hiramatsu
Mat. Science & Engineering B 59 (1999), 163
paper [89]

Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization
F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, K. Hiramatsu,T. Shibata, and N. Sawaki
Mat. Science & Engineering B 59 (1999), 117
paper [90]

Investigation of MOVPE-grown GaN layers doped with As atoms
A.F. Tsatsul'nikov, B. Ya Ber, A.P. Kartashova, Yu.A. Kudryavtsev, N.N. Ledentsov, V.V. Lundin, M.V. Maksimov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, and A. Hoffmann
Semiconductors 33 (1999), 728
paper [91]

Laser Processes in group-III nitrides
A. Hoffmann, L. Eckey, J. Holst
Festkörperprobleme 38, Advances in Solid State Physics (1998), ed. by B. Kramer, p. 29
paper [92]

Hyper-Raman scattering on GaN and CdS
L. Filippides, H. Siegle, A. Hoffmann, and C. Thomsen
phys. Stat. sol. (b) 212 (1999), R1
paper [93]

Stress analysis of selective epitaxial growth of GaN
Q.K.K. Liu, A. Hoffmann, H. Siegle, A. Kaschner, C. Thomsen, J. Christen, F. Bertram
Appl. Phys. Lett. 74 (1999), 3122
paper [94]

Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices
N.N. Ledentsov, A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, and A. Hoffmann
Appl. Phys. Lett. 74 (1999), 161
paper [95]

Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism
H. Siegle, A. Kaschner, A. Hoffmann, I. Broser, C . Thomsen, S. Einfeldt, D. Hommel
Phys. Rev. B 58 (1999), 13 619
paper [96]

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and µ-Raman spectroscopy
F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Schibata, N. Sawaki.
Appl. Phys. Lett. 74 (1999), 359
paper [97]

Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots
I.L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen.
Phys. Rev. B 60 (1999), 8695
paper [98]