Bound excitons in wide-gap II-VI and nitride semiconductors- comparison of optical studies of shallow dopants in these material
A. Hoffmann, V. Kutzer, A. Göldner
phys. stat. sol (b) 210 (1998), 327
paper

Direct imaging of In-rich nanoclusters in InGaN correlating highly spatially resolved cathodoluminescence microscopy, transmission electron microscopy and micro-Raman spectroscopy
F. Bertram, J. Christen, A. Hoffmann, S. Selke, S. Einfeldt, D. Hommel
Journal of Electronic Materials 27 (1998), 35
paper

Stimulated emission and optical gain of InGaN heterostructures grown by MOVPE production scale reactors
J. Holst, A. Hoffmann, M. Heuken, M. Schwamberra, O. Schön
Ohmsha Ltd. IOS Press Inc., 2 ^nd International Symposium on Blue
Laser and Light Emitting Diodes, eds. K. Onabe, 1998, p. 544
paper

Optical properties of trions in ZnSe/ZnMgSe quantum wells
V. Kutzer, H. Born, A. Hoffmann, A. Schätz, H.-P. Wagner
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific, 1998).
paper

Vertical coupling of quantum islands in CdSe/ZnSe submonolayer superlattices
I.L. Krestnikov, P.S. Kop'ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D.Bimberg, and C.M. Sotomayor Torres
Proceedings of the 6th International Symposium "Nanostructures: Physics and Technology", Ioffe Institute,
St. Petersburg, Russia, June 22-26, (1998), p. 187-190 (1998).
paper

Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without external optical confinement
B.V. Volovik, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, A.F. Tsatsul'nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific, 1998).
paper

Vertical arrangement and wavefunction control in structures with 2D quantum dots
I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop'ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen.
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific Publishing, 1998) E1.
paper

Excitonic gain in CdSe/ZnSe quantum dot structures
M. Strassburg, I.L. Krestnikov, A. Göldner, V. Kutzer, A. Hoffmann, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen.
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific Publishing, 1998).
paper

Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix
I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V.
Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres
phys. stat. sol.(a) 168, 309-315 (1998).
paper

Radiative and nonradiative relaxation mechanisms of group-III Nitrides
A. Goeldner, M. Strassburg, A. Hoffmann, B. Gil
Proceedings ICPS24, Jerusalem, August 2-7, 1998 (World Scientific Publishing, 1998).
paper

Fine structure and Jahn-Teller effect of transition metals in GaN and AlN
P. Thurian and A. Hoffmann
XIV Int. Symposium on Electron-Phonon Dynamics and Jahn-Teller-Effect, Erice, Italy, July 7-13, 1998, eds.
G. Bevilacqua, L. Martinelli, N. Terzi, World Scientific Publishing (1998), 216-229
paper

Excitons and phonons in GaN - magnetooptical and spatially resolved investigations
A. Hoffmann, L. Eckey, H. Siegle, A. Kaschner, J. Christen, F. Bertram, Q.K.K. Liu
Acta Physica Polonica A 94 (1998), 125
paper

Properties of the intermediately bound α -, β- and γ-excitons in ZnO: Cu
P. Dahan; V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser
J. Phys.: Condens. Matr. 10 (1998), 2007
paper

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers
L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. Siegle, C Thomsen, B. Schineller, K. Heime, M. Heuken, O. Schön, R. Beccard
J. Appl. Phys. 84 (1998), 5828
paper

Isotope shift in semiconductors with transition metal impurities. Experiments and theory applied to ZnO: Cu
P. Dahan, V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 57 (1998), 9690
paper

Fine structure and Magnetooptics of excitonic levels in wurtzite GaN
L. Eckey, A. Hoffmann, P. Thurian, I. Broser, B.K. Meyer, K. Hiramatsu
Material Research Soc. Symp. Boston (1998), eds. F. A. Ponce, J. A. Edmund, B.K. Meyer Vol. 482, p. 637
paper

Radiative and nonradiative relaxation of excitons in GaN
A. Göldner, L. Eckey, A. Hoffmann, I. Broser, A. Alemu, B. Gil, S. Ruffenach-Clur, R.L Aulombard, O. Briot
Material Research Soc. Symp. Boston (1998), eds. F. A. Ponce, J. A. Edmund, B.K. Meyer Vol. 482, p. 555
paper

Mechanisms of optical gain in cubic GaN
J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, K. Lischka
Appl. Phys. Lett. 72 (1998), 1439
paper

Gain studies of (Cd,Zn) Se quantum islands in a ZnSe matrix
M. Straßburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov
Appl. Phys. Lett. 72 (1998), 942
paper

The V³⁺-center in AlN
P. Thurian, I. Loa, P. Maxim, A. Hoffmann, C. Thomsen, K. Pressel
Appl. Phys. Lett. 71 (1998), 2993
paper

Excited states and energy relaxation in stacked InAs/GaAs quantum dots
R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg
Phys. Rev. B 57 (1998), 9050
paper

Excitonic quantum efficiency of GaN
A. Göldner, L. Eckey, B. Gil, and O. Briot
Mater. Sci. Forum 264-268 (1998), 1259
paper

Excitonic fine structure and high density effects in GaN
A. Hoffmann, L. Eckey
Mater. Sci. Forum 264-268 (1998), 1283
paper

Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures
M. Straßburg, N.N. Ledentsov, A. Hoffmann, U. W. Pohl, D. Bimberg, I.L. Krestnikov,S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop'ev, Zh.I. Alferov
J. Physica E 2, (1998), 542
paper

Lasing and gain mechanisms in AlGaN-GaN-double heterostructures: correlation with structural properties
J. Holst, M. Straßburg, N.N. Ledentsov, L. Eckey, A. Göldner, A. Hoffmann, T. Hempel, D. Rudloff, F. Bertram, J. Christen, A.V. Sakharov, M.V. Maximov, A.S. Usikov, W.V. Lundin, B.V. Pushnyl, and Zh. I. Alferov
Mater. Sci. Forum 264-268 (1998), 1291
paper

On the nature of the 3.42 eV luminescence in hexagonal GaN
S. Fischer, G. Steude, D.M. Hofmann, F. Kurth, F. Anders, M. Topf, B.K. Meyer, F. Bertram, M. Schmidt, J. Christen, L. Eckey, J. Holst, A. Hoffmann
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 396 special issue
of Journal of Crystal Growth189/190 (1998), 630
paper

The influence of the Al-content on the optical gain in AlGaN
J. Holst, L. Eckey, A. Hoffmann, O. Ambacher, M. Stutzmann
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 56 special issue
of Journal of Crystal Growth 189/190 (1998), 692
paper

Compensation effects in Mg -doped GaN epilayers
L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, B. Schineller, K. Heime, M. Heuken, O. Schön, R. Beccard
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 58 special issue
of Journal of Crystal Growth 189/190 (1998), 523
paper

The  exciton-polariton effect on the fluorescence of GaN on sapphire
B. Gil, A. Hoffmann, S. Clur, L. Eckey, O. Briot, R.L. Aulombard
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 428 special issue
of Journal of Crystal Growth 189/190 (1998), 639
paper

Photoluminescence dynamics of Co doped ZnCdSe and ZnSSe crystals
H. Born, P. Thurian, T. Surkova, V. Kutzer, A. Hoffmann, W. Busse, H.-E. Gumlich, I. Broser, W.W. Giriat
J. Cryst. Growth 184/185 (1997), 1132
paper

Local strain distribution of hexagonal GaN
A. Hoffmann, J. Christen, H. Siegle, F. Bertram, M. Schmidt, L. Eckey, A. Kaschner, C. Thomsen, K. Hiramatsu, S. Kitamura, N. Sawaki
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 422 special issue of Journal of Crystal Growth
paper

Gain to absorption conversion by increasing excitation densities in excitonic waveguides
V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, N.N. Ledentsov, U.W. Pohl, D. Bimberg, S.V. Ivanov, I.L. Krestnikov
J. Cryst. Growth 184/185 (1997), 632
paper

Vertical strain and doping gradients in thick GaN layers
H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, K. Hiramatsu
Appl. Phys. Lett. 71 (1997), 2490
paper

Local vibrational modes at transition metal impurities in hexagonal AlN and GaN crystals
C. Göbel, C. Schrepel, U. Scherz, P. Thurian, G. Kaczmarczyk, and A. Hoffmann
Material Science Forum 258-263 (1997), 1173
paper

Raman scattering from defects in GaN
H. Siegle, A. Kaschner, P. Thurian, A. Hoffmann, I. Broser, C. Thomsen,
Material Science Forum 258-263 (1997), 1197
paper

Zeeman studies of the 0.9 eV emission in AlN and GaN
P. Thurian, I. Loa, P. Maxim, K. Pressel, A. Hoffmann, C. Thomsen
Material Science Forum 258-263 (1997), 1131
paper

Hot carrier relaxation in InAs/GaAs quantum dots
R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P. S. Kop'ev, Zh. I. Alferov
J. Physica E 2, (1998), 578
paper

Carrier capture and relaxation processes in InAs/GaAs quantum dots
R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q. Xie, P. Chen, A. Madhukar, V.M. Ustinov, P. S. Kop'ev, Zh. I. Alferov
Superlattices and Microstructures xx (1997), xxx
paper

Photoluminescence of Co-doped ZnCdSe and ZnSSe alloys
T. P. Surkova, H. Born, P. Thurian, A. Hoffmann, W. Busse, H.-E. Gumlich, I. Broser, W. Giriat
Acta Physica Polonica A 92 (1997), 1013
paper

Optical gain measurements of GaN and Al_xGa_1-xN heterostructures
L. Eckey, V. Kutzer, J. Holst, A. Hoffmann, I. Broser, O. Ambacher, M. Stutzmann, H. Amano, I. Akasaki
GaN and Related Materials, Material Research Soc. Symposium, San Francisco,
eds. C. Abernathy, H. Amano J. Zolper, Pittsburgh, Vol. 486 (1997), 237
paper

Properties of the biexciton and the electron-hole plasma in highly excited GaN
J. Holst, L. Eckey, A. Hoffmann, I. Broser, H. Amano, I. Akasaki
2nd European GaN Workshop, Material Research Soc. Internet Journal of Nitride
Semiconductor Research, Walbronn (France) (1997), Vol. 2. Article 25
paper

Spatially resolved investigations of the excitonic luminescence in GaN
A. Hoffmann, J. Christen, H. Siegle, F. Bertram, D. Schmidt, L. Eckey, C. Thomsen, K. Hiramatsu
Mat. Science & Engineering B 50 (1997), 192
paper

Defect spectroscopy in the nitrides
B.K. Meyer, A. Hoffmann, P. Thurian
Physics and Applications of Group III Nitride Semiconductor Compounds, copyright
by Oxford University Press, ed. B. Gil, (1997), p. 242

Photoluminescence of Fe-complexes in GaN
P. Thurian, A. Hoffmann, P. Maxim, L. Eckey, R. Heitz, I. Broser, K. Pressel, B. K. Meyer, J. Schneider, J. Baur, M. Kunzer
Material Research Soc. Symp. Boston (1997), eds. F. A. Ponce, J. A. Edmund Vol. 449, p. 707
paper

Depth-profile of the excitonic luminescence in gallium-nitride layers
H. Siegle, A. Hoffmann L. Eckey, C. Thomsen, T. Detchprohm, K. Hiramatsu, T. Davis, J. W. Steeds
Material Research Soc. Symp. Boston (1997), eds. F. A. Ponce, J. A. Edmund, Vol. 449, p. 677
paper

Comment on: shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transition
H. Siegle, I. Loa, P. Thurian, L. Eckey, A. Hoffmann, I. Broser, and C. Thomsen
Appl. Phys. Lett. 70 (1997), 909
paper

Isotope shift of local vibrational modes at transition-metal impurities in semiconductors
C. Schrepel, C. Göbel, U. Scherz, P. Thurian, G. Kaczmarczyk, A. Hoffmann
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd. 201 (1997), 295
paper

Defect modes and disorder-induced Raman scattering in GaN
H. Siegle, I. Loa, P. Thurian, G. Kaczmarczyk, L. Filippides, A. Hoffmann, C. Thomsen, D. Schikora, D. Hankeln, K. Lischka
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd. 201 (1997), 187
paper

Jahn-Teller effect of Cu²⁺ in II-VI compounds
P. Thurian, R. Heitz, G. Kaczmarczyk, A. Hoffmann, I. Broser
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd. 201 (1997), 411
paper

Jahn-Teller Effect: Isotope splitting and nonradiative recombination
A. Hoffmann and R. Heitz
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd 201 (1997), 277
paper

Photoluminescence and optical gain in highly excited GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu
J. Lumin. 72-74 (1997), 59
paper

Energy  relaxation by multiphonon processes recombination in InAs/GaAs quantum dots
R. Heitz, M. Veit, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh. I. Alferov
Phys. Rev. B 56 (1997), 10435
paper

Time-resolved Raman scattering in gallium nitride
H. Siegle, V. Kutzer. B. Lummer, A. Hoffmann, C. Thomsen
23rd Int. Conf. on the Phys. of Semicond. copyright by World Scientific
Publishing eds. M. Scheffler, R. Zimmermann, (1996), p. 533
paper

Zone-boundary phonons in hexagonal and cubic GaN
H. Siegle, G. Kaczmarczyk, L. Philippidis, A.P. Litvinchuk, A. Hoffmann, C. Thomsen
Phys. Rev. B 55 (1997), 7000
paper
Excited states of Fe³⁺ in GaN
R. Heitz, P. Maxim, L. Eckey, P. Thurian, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer
Phys. Rev. B 55 (1997), 4382
paper

Intensity-dependent hot-phonon relaxation in ZnSe
V. Kutzer, H. Siegle, C. Thomsen, A. Hoffmann, I. Broser
Mat. Science & Engineering B 43 (1997), 46
paper

1996

Gain spectroscopy of HVPE-grown GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, T. Detchprohm, K. Hiramatsu
1st European GaN Workshop, Material Research Soc. Internet Journal of Nitride
Semiconductor Research, Rigi (Switzerland) (1996), 125
paper

Raman frequency and angular dispersion of polar modes in aluminum nitride and gallium nitride
I. Filippides, H. Siegle, A. Hoffmann, C. Thomsen, K. Karch, and F. Bechstedt
phys. stat. sol. (b) 198 (1996), 621
paper

Optical properties of highly excited GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu
23 rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 2861
paper

Magneto-optical properties of the I¹_d bound exciton emission center in ZnSe
U. Pohl, A. Göldner, R. Heitz, A. Hoffmann
23rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 369
paper

Fe related defects in GaN epilayers
P. Thurian, R. Heitz, L. Eckey, P. Maxim, V. Kutzer, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer
23rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 2897
paper

Acoustic and optical zone-boundary phonons in gallium nitride
H. Siegle, L. Philippides, G. Kaczmarczyk, A. P. Litvinchuk, A. Hoffmann, C. Thomsen
23rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 537
paper

Dynamics of excited states in GaN
A. Hoffmann
Mat. Science & Engineering B 43 (1996), 185
paper

Optical properties of GaN
A. Hoffmann
Festkörperprobleme 36, Advances in Solid State Physics (1996), ed. R. Helbig,p. 33

Micro-Raman-scattering experiments of GaN layers deposited on sapphire and SiC substrates
H. Siegle, P. Thurian, L. Eckey, G. Kaczmarczyk, L. Pilipides, A. Hoffmann, I. Broser, C. Thomsen, T. Detchprohm, K. Hiramatsu
Ohmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light
Emitting Diodes, eds. A. Yoshikawa, K. Kishino, T. Yasuda (1996), p. 488
paper

Defects in cubic and hexagonal GaN epilayers
P. Thurian, L. Eckey, J.-C. Holst, R. Heitz, A. Hoffmann, C. Thomsen, I. Broser, K. Pressel, I. Akasaki, H. Amano, D. Schikora, M. Hankeln, K. Lischka
Ohmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light Emitting
Diodes, eds. A. Yoshikawa, K. Kishino, T. Yasuda (1996), p. 180
paper

Spatially-resolved photoluminescence and Raman scattering experiments on GaN/substrate interface
H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer ,H. Amano,I. Akasaki
Appl. Phys. Lett. 68 (1996), 1265
paper

Excitonic fine structure of GaN epilayers
D. Volm, B. K. Meyer, L. Eckey, A. Hoffmann ,T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki,
Phys. Rev. B 53, (1996), 16543
paper

Raman and photoluminescence imaging of the GaN/substrate interface
H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki,
Inst. Phys. 149 (1996), 97
paper

Dynamical study of the yellow luminescence band in GaN
A. Hoffmann, L. Eckey, P. Maxim, J.-Chr. Holst, R. Heitz, D. M. Hofmann, D. Kovalev, G. Steude, D. Volm, B.K. Meyer, T. Detchprohm, H. Amano, I. Akasaki
Proc. Topical Workshop on III-V Nitrides, TWN'95, Nagoya, (1995) Solid State Electronics 41 (1997), 275
paper

Excitonic structure in GaN epilayers grown by hydride vapor phase epitaxy
L. Eckey, L. Podlowski, A. Göldner, A. Hoffmann, I. Broser, B.K. Meyer, D. Volm, T. Strehl, K. Hiramatsu , T. Detchprohm, H. Amano, I. Akasaki
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), p. 943
paper

Relaxation and recombination dynamics of excitons in GaN/Al ₂ O₃ epilayers
L. Eckey, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, K. Hiramatsu, T. Detchprohm, H. Amano, I. Akasaki,
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), p. 927
paper

Pulse propagation-induced higher orders of diffraction in degenerate four-wave mixing
B. Lummer, J.-M. Wagner, R. Heitz, A. Hoffmann, I. Broser, R. Zimmermann
Phys. Rev. B 54. (1996), 16727
paper

Photoluminescence study of the 1.047 eV Emission in GaN
K. Pressel, S. Nilsson, R. Heitz, A. Hoffmann, B.K. Meyer
J. Appl. Phys. 79 (1996), 3214
paper

Nonlinear Zeeman behavior of Cu²⁺centers in ZnS and CdS explained by a Jahn-Teller effect
T. Telahun, U. Scherz, P. Thurian, R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 53 (1996), 1274
paper

Dynamics of bound exciton luminescence from epitaxial GaN
L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E. N. Mokhov, P. G. Baranov
Appl. Phys. Lett. 68 (1996), 415
paper
 
Influence of compensation on the luminescence of nitrogen-doped ZnSe-epilayers grown by MOVPE
R. Heitz, E. Moll, V. Kutzer, D. Wiesmann, B. Lummer, A. Hoffmann, I. Broser, P. Bäume, W. Taudt, J. Söllner, M. Heuken
J. Cryst. Growth 159 (1996), 307
paper

Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
A. Hoffmann, D. Wiesmann, I. Loa, R. Heitz, W. Pohl, I. Broser, L. Worschech, E. Kurtz, D. Hommel, G. Landwehr, D. Hofmann, B.K. Meyer
J. Cryst. Growth 159 (1996), 302
paper

Acceptor bound biexcitons in ZnSe and CdS
V. Kutzer, B. Lummer, R. Heitz, A. Hoffmann, I. Broser, E. Kurtz, D. Hommel
J. Cryst. Growth 159 (1996),776
paper