Publikationen 1995 - 1993

Transition metal luminescence in AlN crystals
K. Pressel, R. Heitz, S. Nilsson, P. Thurian, A. Hoffmann, B.K. Meyer
1st Int. Symposium on GaN and Related Materials, eds. R. D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol.395, p. 613
paper [1]

Identification of transition metals in GaN
K. Pressel, R. Heitz, L. Eckey, P. Thurian, A. Hoffmann, B.K. Meyer, S. Fischer, C. Wetzel, E. E. Haller,
1st Int. Symposium on GaN and Related Materials, eds. R. D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol.395, p. 491
paper [2]

Spatially-resolved photoluminescence and Raman study on the GaN/substrate interface
H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki
1st Int. Symposium on GaN and Related Materials, eds. R. D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol. 395, p. 577
paper [3]

Selective dynamical study of luminescence near the surface and the interface of epitaxial GaN
L. Eckey, A. Hoffmann, R. Heitz, I. Broser, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki
1st Int. Symposium on GaN and Related Materials, eds. R.D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol. 395, p. 589
paper [4]

Zeeman splitting and isotope shift of optical transitions at Ni²⁺ centers in cubic ZnS
C. Schrepel, J. Schöpp, R. Heitz, A. Hoffmann, U. Scherz
Material Science Forum 196-201 (1995), 743
paper [5]

Nonlinear Zeeman behavior of Cu²⁺ centers in ZnS and CdS
T. Telahun, P. Thurian, A. Hoffmann, I. Broser
Material Science Forum 196-201 (1995), 767
paper [6]

Zeeman spectroscopy of transition metals in hexagonal GaN
R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, E. N. Mokhov
Material Science Forum 196-201 (1995), 719
paper [7]

Local vibrational modes of 3d elements in wurtzite type ZnO and GaN crystals
P. Thurian, G. Kaczmarczyk, H. Siegle, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, R. Hoffbauer, U. Scherz
Material Science Forum 196-201 (1995), 1571
paper [8]

Quantitative determination of hexagonal and minority phase in cubic GaN using Raman spectroscopy
H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen. B.K. Meyer, D. Schikora, M. Hankeln, K. Lischka
Solid St. Commun. 96 (1995), 943
paper [9]

Properties of the yellow luminescence in undoped GaN epitaxial layers
D. M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprohm, H. Amano, I. Akasaki
Phys. Rev B 52, (1995), 16702
paper [10]

Time resolved photoluminescence spectroscopy on GaN epilayers
B. K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, E. N. Mokhov, P. G. Baranov, C. Quiu, J.I. Pankove
Defect and Impurity Engineered Semiconductors and Devices, Symposium, San Francisco (1995), eds. S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, Pittsburgh, Material Research Soc., Vol. 378 (1995), p. 521
paper [11]

Identification of the 1.19 eV luminescence in hexagonal GaN
R. Heitz, K. Pressel, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, B.K. Meyer, E. N. Mokhov
Phys. Rev. B 52 (1995), 16508
paper [12]

Magneto-optical investigation of the shallow lithium acceptor in zinc selenide
U.W. Pohl, D. Wiesmann, G.H. Kudlek, B. Litzenburger, A. Hoffmann
J. Cryst. Growth 159 (1996), 414
paper [13]

Local vibrational modes of the CuO₄-cluster in ZnO
I. Broser, G. Kaczmarczyk, P. Thurian, R. Heitz, A. Hoffmann
J. Cryst. Growth 159 (1996), 889
paper [14]

Calorimetric absorption spectroscopy of deep defects and quantum dots
R. Heitz, L. Podlowski, J. Böhrer, A. Hoffmann, I. Broser, D. Bimberg
Acta Physica Polonica A 88 (1995), 619 Y
paper [15]

Intensity-dependent energy and line shape variation of donor-acceptor-pair bands in ZnSe:N at different compensation levels
P. Bäume, J. Gutowski, D. Wiesmann, R. Heitz, A. Hoffmann, E. Kurtz, D. Hommel, G. Landwehr
Appl. Phys. Lett. 67 (1995), 1914
paper [16]

Zeeman spectroscopy of the Fe³⁺ center in GaN
R. Heitz, P. Thurian, I. Loa, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, E.N. Mokhov
Appl. Phys. Lett. 67 (1995), 2822
paper [17]

Optical investigation of gallium nitride (GaN) epitaxial layers grown on 6H-SiC
K. Pressel, S. Nilson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E. N. Mokhov, P.G. Baranov
Material Science & Technology 12 (1995), 90
paper [18]

Dephasing of acceptor bound excitons in II-VI semiconductors
B. Lummer, R. Heitz, V. Kutzer, J.-M. Wagner, A. Hoffmann, and I. Broser
phys. stat. sol. (b) 188 (1995), 493
paper [19]

Zeeman spectroscopy on the nitrogen acceptor bound exciton in epitaxial ZnSe
W. Stadler, B. K. Meyer, D. Volm, D. M. Hofmann, A. Hoffmann, D. Wiesmann, R. Heitz, E. Kurtz, D. Hommel
Materials Science Forum 182-184, (1995), 303
paper [20]

Absorption as optical access to acceptor concentrations and compensation mechanisms in ZnSe epilayers
R. Heitz, B. Lummer, V. Kutzer, D. Wiesmann, A. Hoffmann, I. Broser, E. Kurtz, S. Einfeldt,
J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 259
paper [21]

Low-temperature growth and planar nitrogen doping of ZnSe in a plasma stimulated LP-MOVPE system
W. Taudt, B. Wachtendorf, H. Hamadeh, S. Lampe, A.L. Gurski, M. Heuken, V. Kutzer, R. Heitz, U. Derscheidt, and A. Hoffmann
Materials Science Forum 182-184, (1995), 35
paper [22]

Degenerate-four-wave-mixing at the nitrogen acceptor bound exciton in ZnSe epilayers
A. Hoffmann, B. Lummer, V. Kutzer, L. Eckey, R. Heitz, I. Broser, E. Kurtz, J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 283
paper [23]

Spatially indirect photoluminescence from InAs/AlSb heterostructures
F. Fuchs, J. Schmitz, J. D. Ralston, P. Koidl, R. Heitz, and A. Hoffmann
Superlattices and Microstructures 16 (1994), 35
paper [24]

Recombination dynamics in strained In_1-xGa_xAs/InP quantum well structures
A. Hoffmann, H. Siegle, L. Eckey, B. Lummer, P. Thurian, R. Heitz, B.K. Meyer, C. Wetzel, D. M. Hofmann, V. Härle, F. Scholz, and A. Kohl
Superlattices and Microstructures 15 (1994), 303
paper [25]

Inequivalence of staggered interfaces in InAlAs/InP Multi-quantum-well structures
F. Heinrichsdorff, J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, I. Broser
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 695
paper [26]

Higher order photon echo in four-wave-mixing experiments
R. Heitz, B. Lummer, J.-M. Wagner, A. Hoffmann, I. Broser, and R. Zimmermann
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 365
paper [27]

Radiative and nonradiative relaxation dynamics of transition metal centers in semiconductors
R. Heitz, L. Podlowski, P. Thurian, A. Hoffmann, and I. Broser
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 2379
paper [28]
 
Nonlinear optical processes in birefringent and dichroitic wide band gap semiconductor
I. Broser, Ch. Fricke, R. Heitz, and A. Hoffmann
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 405
paper [29]

Quantitative determination of the compensation in nitrogen doped ZnSe epilayers
A. Hoffmann, R. Heitz, B. Lummer, V. Kutzer, L. Eckey, I. Broser, E. Kurtz, D. Hommel, B. Jobst,
J. Nürnberger, and G. Landwehr
22_nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing, ed.
J. Lockwood, (1994), 2661
paper [30]

High resolution Zeeman spectroscopy of Ni²⁺in ZnS
R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 50 (1994), 17028
paper [31]

Nonradiative relaxation and the Jahn-Teller effect of Fe²⁺ in III-V semiconductors
R. Heitz, L. Podlowski, A. Hoffmann, and I. Broser
Proc. of the 8th Conference on Semi-Insulating III-V Materials (1994), 115
paper [32]

Exciton dynamics in Ni-activated CdS
R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 49 (1994), 14307
paper [33]

The influence of nitrogen on the p-conductivity in MBE grown ZnSe epilayers
A. Hoffmann, B. Lummer, L. Eckey, V. Kutzer, Ch. Fricke, R. Heitz, I. Broser, E.Kurtz, B. Jobst, and D. Hommel
J. Crystal Growth 138 (1994), 1073
paper [34]

Low temperature growth and plasma enhanced nitrogen doping of ZnSe by MOVPE
W. Taudt, A. Schneider, M. Heuken, Ch. Fricke, and A. Hoffmann
J. Crystal Growth 138 (1994), 418
paper [35]

Shallow impurity-and defect-related complexes in undoped ZnSe crystals
U.W. Pohl, G.H. Kudlek, A. Klimakow, and A. Hoffmann
J. Crystal Growth 138 (1994), 385
paper [36]

Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapor deposition
E. Krause, H. Hartmann, J. Menniger, A. Hoffmann, Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, and I. Broser
J. Crystal Growth 138, (1994), 75
paper [37]

Degenerate-four-wave mixing at bound excitons in II-VI semiconductors
I. Broser, B. Lummer, R. Heitz, and A. Hoffmann
J. Crystal Growth 138 (1994), 809
paper [38]

Time resolved donor-acceptor pair recombination luminescence in highly n-and p-doped II-VI-semiconductors
Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, A. Hoffmann, I. Broser, W. Taudt, and M. Heuken
J. Crystal Growth 138 (1994), 815
paper [39]

Incorporation nitrogen in ZnSe grown by metalorganic vapor phase epitaxy
A. Hoffmann, R. Heitz, B. Lummer, Ch. Fricke, V. Kutzer, I. Broser, W. Taudt, G. Gleitsman, M. Heuken
J. Crystal Growth 138 (1994), 379
paper [40]

Energy transfer processes via the interface of ZnSe/GaAs epilayers
N. Presser, Ch. Fricke, G. Kudlek, R. Heitz, A. Hoffmann, and I. Broser
J. Crystal Growth 138 (1994), 820
paper [41]

Recombination mechanisms in highly doped CdS: In
Ch. Fricke, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 49 (1994), 5313
paper [42]

Spontaneous photon echo from the (A⁰,X) complex in CdS
R. Heitz, B. Lummer, A. Hoffmann, and I. Broser<
J. Lumin. 58 (1994), 237
paper [43]

Nonradiative transition rates of Fe²⁺ in III-V and II-VI semiconductors
L. Podlowski, R. Heitz, P. Thurian, A. Hoffmann, and I. Broser
J. Lumin. 58 (1994), 252
paper [44]
 
Calorimetric absorption spectroscopy of copper in II-VI semiconductors at mK temperatures
I. Broser, L. Podlowski, R. Heitz, P. Thurian, and A. Hoffmann
J. Lumin. 60/61 (1994), 588
paper [45]

Non-linear Zeeman splitting and electron-phonon coupling
J. Schöpp, R. Heitz, A. Hoffmann, and U. Scherz
Materials Science Forum 143-147 (1994), 815
paper [46]

Ligand induced isotope shifts of transition metal centers in ZnO
P. Thurian, R. Heitz, S. Kleinwächter, A. Hoffmann, and I. Broser
Materials Science Forum 143-147 (1994), 453
paper [47]

Energy transfer between Fe²⁺ centers in polymorphic ZnS
A. Hoffmann, L. Podlowski, P. Thurian, R. Heitz, I. Broser, F. Fuchs, and P. Koidl
Materials Science Forum 143-147 (1994), 411
paper [48]
 
Fine structure of the (Fe²⁺,h) bound states in GaP and InP
L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, and W. Ulrici
Materials Science Forum 143-147 (1994), 311
paper [49]

Optical nonlinearities and excitation dynamics in Zn-based II-VI bulk and epitaxial materials
J. Gutowski and A. Hoffmann
Advanced Materials for Optics and Electronic 3 (1994), 15
paper [50]

Phase transition from the cubic to the hexagonal modification in thin CdS films on InP (100) 
D.R.T. Zahn, U. Rossow, G. Kudlek, A. Hoffmann, I. Broser, W. Richter
Advanced Materials for Optics and Electronic 3 (1994), 11
paper [51]

The influence of deep defects on exciton dynamics in CdS
R. Heitz, A. Hoffman, and I. Broser
Proc. 9th Int. Conf. on Luminescence, Storrs, USA, (1993), 112
paper [52]

The influence of antimony interlayers on the formation of CdS epitaxial layers on InP (100) studied by Raman, photoluminescence, and ellipsometry
A. Kelnberger, D.R.T. Zahn, G. Kudlek, U. Rossow, M. Köpp, N. Esser, A. Hoffmann, and W. Richter
Formation of Semiconductor Interfaces, Proc. 4th Int. Conf., Forschungszentrum Jülich, World Scientific Singapore (1993), eds. H. Lüth, W. Mönch J. Pollmann, p. 69
paper [53]

Structural and optical properties of Ga₂S₃ layers on GaAs (100)
M. von der Emde, U. Rossow, G. Kudlek, A. Hoffmann, A. Krost, W. Richter, S. Morley, A. C. Wright, J. O. Williams, and D. R. T. Zahn
Formation of Semiconductor Interfaces, Proc. 4th Int. Conf., Forschungszentrum
Jülich, World Scientific Singapore (1993), eds. H. Lüth, W. Mönch J. Pollmann, p 684
paper [54]

Electronic structure and dynamical behavior of different exciton complexes in ZnSe bulk crystals
G.H. Kudlek, U.W. Pohl, Ch. Fricke, R. Heitz, A. Hoffmann, J. Gutowski, and I. Broser
Physica B 185 (1993), 325
paper [55]

Magneto-optics of Cu -related defects in polymorphic ZnS
P. Thurian, R. Heitz, T. Jentzsch, A. Hoffmann, and I. Broser
Physica B 185 (1993), 239
paper [56]

Site-selective study of picosecond relaxation processes of Ni²⁺in polymorphic ZnS
R. Heitz, L. Eckey, A. Hoffmann, and I. Broser
Physica B 185 (1993), 234
paper [57]

Magneto-optics of Ni-bound shallow states in ZnS and CdS
R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 48 (1993), 8672
paper [58]