1996

Optical properties of highly excited GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu
23^rd ICPS, Berlin, Germany, copyright by World Scientific Publishing, ed. M. Scheffler, R. Zimmermann, (1996), 2861

Fe-related defects in GaN epilayers
P. Thurian, R. Heitz, L. Eckey, P. Maxim, V. Kutzer, A. Hoffmann, I. Broser, K. Pressel, and B.K. Meyer
23^rd ICPS, Berlin, Germany, copyright by World Scientific Publishing, ed. M. Scheffler, R. Zimmermann, (1996), 2897

Gain spectroscopy of HVPE-grown GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, T. Detchprohm, and K. Hiramatsu
1^st European GaN Workshop, Material Research Soc. Internet Journal of Nitride Semiconductor Research, Rigi (Switzerland) (1996), 125

Micro-Raman-scattering experiments of GaN layers deposited on sapphire and SiC.
Siegle, P. Thurian, L. Eckey, G. Kaczmarczyk, L. Filippidis, A. Hoffmann, I. Broser,A.P. Litvinchuk, C. Thomsen, T. Detchprohm, and K. HiramatsuOhmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light Emitting Diodes, ed. A. Yoshikawa, K. Kishino, T. Yasuda, (1996), 488

Defects in cubic and hexagonal GaN epilayers
P. Thurian, L. Eckey, H, Siegle, J. Holst, P. Maxim, R. Heitz, A. Hoffmann, C. Thomsen, I. Broser, K. Pressel, I. Akasaki, H. Amano, K. Hiramatsu, T. Detchprohm, D. Schikora, M. Hankeln, and K. Lischka
Ohmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light Emitting Diodes, ed. A. Yoshikawa, K. Kishino, T. Yasuda, (1996), 180

Excitonic structure of GaN epitaxial films grown by hydride-vapor-phase epitaxy
L. Eckey, L. Podlowski, A. Göldner, A. Hoffmann, I. Broser, B.K. Meyer, D. Volm, T.
Streibl, K. Hiramatsu , T. Detchprohm, H. Amano, and I. Akasaki
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), 943

Relaxation and recombination dynamics in GaN/Al2O₃ epilayers
L. Eckey, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, K. Hiramatsu, T. Detchprohm, H. Amano, and I. Akasaki
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), 927

Pulse-propagation-induced higher orders of diffraction in transient four-wave mixing with semiconductors
B. Lummer, J.-M. Wagner, R. Heitz, A. Hoffmann, I. Broser, and R. Zimmermann
Phys. Rev. B 54 (1996), 16727

Nonlinear Zeeman behavior of Cu²⁺ centers in ZnS and CdS explained by a Jahn-Teller effect
T. Telahun, U. Scherz, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 53 (1996), 1274

Dynamics of bound-exciton luminescence from epitaxial GaN
L. Eckey, J. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E.N. Mokhov, and P.G. Baranov
Appl. Phys. Lett. 68 (1996), 415

Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE
R. Heitz, E. Moll, V. Kutzer, D. Wiesmann, B. Lummer, A. Hoffmann, I. Broser, P. Bäume, W. Taudt, J. Söllner, and M. Heuken
J. Cryst. Growth 159 (1996), 307

Local vibrational modes of the CuO₄-cluster in ZnO
I. Broser, G. Kaczmarczyk, P. Thurian, R. Heitz, and A. Hoffmann
J. Cryst. Growth 159 (1996), 889

Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
A. Hoffmann, D. Wiesmann, I. Loa, R. Heitz, W. Pohl, I. Broser, L. Worschech, E. Kurtz, D. Hommel, G. Landwehr, D. Hofmann, and B.K. Meyer
J. Cryst. Growth 159 (1996), 302

Acceptor bound biexcitons in ZnSe and CdS
V. Kutzer, B. Lummer, R. Heitz, A. Hoffmann, I. Broser, E. Kurtz, and D. Hommel
J. Cryst. Growth 159 (1996), 776 

1995

Selective dynamical study of luminescence near the surface and the interface of epitaxial GaN
L. Eckey, A. Hoffmann, R. Heitz, I. Broser, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, and I. Akasaki
1^st Int. Symposium on GaN and Related Materials, ed. R.D. Dupuis, S. Nakamura, F.A. Ponce, J.A. Edmund, Material Research
Soc. Symp. Boston (1995), Vol. 395, 589

Nonlinear Zeeman behavior of copper centers in ZnS and CdS
T. Telahun, P. Thurian, A. Hoffmann, I. Broser, and U. Scherz
Material Science Forum 196-201 (1995), 767-772, 18^th ICDS 1995, Sendai

Zeeman spectroscopy of transition metals in hexagonal GaN
R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov
Material Science Forum 196-201 (1995), 719

Time resolved photoluminescence spectroscopy on GaN epitaxial layers
B.K. Meyer, D. Volm, C. Wetzel, L. Eckey, J. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, E.N. Mokhov, P.G. Baranov, C. Qiu, and J.I. Pankove
Defect and Impurity Engineered Semiconductors and Devices, Symposium, San Francisco (1995), ed. S. Ashok, J. Chevallier, I. Akasaki,
N.M. Johnson, Pittsburgh, Material Research Soc., Vol 378 (1995), 521

Identification of the 1.19-eV luminescence in hexagonal GaN
R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov
Phys. Rev. B 52 (1995), 16508

Local vibrational modes of 3d elements in wurtzite type ZnO and GaN crystals
P. Thurian, G. Kaczmarczyk, H. Siegle, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, R. Hoffbauer, and U. Scherz
Material Science Forum 196-201 (1995), 1571

Calorimetric absorption spectroscopy of deep defects and quantum dots
R. Heitz, L. Podlowski, J. Böhrer, A. Hoffmann, I. Broser, and D. Bimberg
Acta Physica Polonica A 88 (1995), 619

Zeeman spectroscopy of the Fe³⁺ center in GaN
R. Heitz, P. Thurian, I. Loa, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov
Appl. Phys. Lett. 67 (1995), 2822

Dephasing of acceptor bound excitons in II-VI semiconductors
B. Lummer, R. Heitz, V. Kutzer, J.-M. Wagner, A. Hoffmann, and I. Broser
phys. stat. sol. (b) 188, (1995), 493

Absorption as optical access to acceptor concentrations and compensation mechanisms in ZnSe epilayers
R. Heitz, B. Lummer, V. Kutzer, D. Wiesmann, A. Hoffmann, I. Broser, E. Kurtz, S. Einfeldt, J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 259

Degenerate-four-wave-mixing at the nitrogen acceptor bound exciton in ZnSe epilayers
A. Hoffmann, B. Lummer, V. Kutzer, L. Eckey, R. Heitz, I. Broser, E. Kurtz, J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 283

1994

Inequivalence of staggered interfaces in InAlAs/InP multi quantum well structures
F. Heinrichsdorff, J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, and I. Broser
22^nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing editor J. Lockwood, (1994), 695

Higher order photon echo in four-wave-mixing experiments
R. Heitz, B. Lummer, J.-M. Wagner, A. Hoffmann, I. Broser, and R. Zimmermann
22^nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing editor J. Lockwood, (1994), 365

Radiative and nonradiative relaxation dynamics of transition metal centers in semiconductors
R. Heitz, L. Podlowski, P. Thurian, A. Hoffmann, and I. Broser
22^nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing editor J. Lockwood, (1994), 2379

Non-linear optical processes in birefringent and dichroitic wide band gap semiconductor
I. Broser, Ch. Fricke, R. Heitz, and A. Hoffmann
22^nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing editor J. Lockwood, (1994), 405

Quantitative determination of the compensation in nitrogen doped ZnSe epilayers
A. Hoffmann, R. Heitz, B. Lummer, V. Kutzer, L. Eckey, I. Broser, E. Kurtz, D. Hommel, B. Jobst, J. Nürnberger, and G. Landwehr
22^nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing, editor J. Lockwood, (1994), 2661

High-resolution Zeeman spectroscopy of Ni²⁺ in
R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 50 (1994), 17028

Nonradiative relaxation and the Jahn-Teller effect of Fe²⁺ in III-V semiconductors
R. Heitz, L. Podlowski, A. Hoffmann, and I. Broser
Proc. of the 8^th Conference on Semi-Insulating III-V Materials (1994), 115

Exciton dynamics in Ni-activated CdS
R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 49 (1994), 17028

The influence of nitrogen on the p-conductivity in ZnSe epilayers grown by molecular beam epitaxy
A. Hoffmann, B. Lummer, L. Eckey, V. Kutzer, Ch. Fricke, R. Heitz, I. Broser, E. Kurtz, B. Jobst, and D. Hommel
J. Crystal Growth 138 (1994), 1073

Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition
E. Krause, H. Hartmann, J. Menniger, A. Hoffmann, Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, and I. Broser
J. Crystal Growth 138 (1994), 75

Degenerate four-wave mixing at bound excitons in II-VI semiconductors
I. Broser, B. Lummer, R. Heitz, and A. Hoffmann
J. Crystal Growth 138 (1994), 809

Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II-VI semiconductors
Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, A. Hoffmann, I. Broser, W. Taudt, and M. Heuken
J. Crystal Growth 138 (1994), 815

Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy
A. Hoffmann, R. Heitz, B. Lummer, Ch. Fricke, V. Kutzer, I. Broser, W. Taudt, G. Gleitsmann, and M. Heuken
J. Crystal Growth 138 (1994), 379

Energy transfer processes via the interface of ZnSe/GaAs epilayers
N. Presser, Ch. Fricke, G. Kudlek, R. Heitz, A. Hoffmann, and I. Broser
J. Crystal Growth 138 (1994), 820

Recombination mechanisms in highly doped CdS:In
Ch. Fricke, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 49 (1994), 5313

Spontaneous Photon Echo from the (A⁰,X) Complex in CdS
R. Heitz, B. Lummer, A. Hoffmann, and I. Broser
J. Lumin. 58 (1994), 237

Non-radiative transition rates of Fe²⁺ in III-V and II-VI semiconductors
L. Podlowski, R. Heitz, P. Thurian, A. Hoffmann, and I. Broser
J. Lumin. 58 (1994), 252-256

Calorimetric absorption spectroscopy of copper in II-VI semiconductors at mK temperatures
I. Broser, L. Podlowski, P. Thurian, R. Heitz, and A. Hoffmann
J. Lumin. 60 & 61 (1994), 588-591

Metal Ligand Induced Isotope Shifts of Transition Centers in Zn0
P. Thurian, R. Heitz, S. Kleinwächter, A. Hoffmann, and I. Broser
Materials Science Forum 143-147 (1994), 453

Energy Transfer Between Fe²⁺ Centers in Polymorphic ZnS
A. Hoffmann, L. Podlowski, P. Thurian, R. Heitz, I. Broser, F. Fuchs, and P. Koidl
Materials Science Forum 143-147 (1994), 411

Fine Structure of the (Fe²⁺,h) Bound States in GaP and InP
L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, and W. Ulrici
Materials Science Forum 143-147 (1994), 311

Phase Transition from the Cubic to the Hexagonal Modification in Thin CdS Films on InP (110)
D.R.T. Zahn, G. Kudlek, U. Rossow, A. Hoffmann, I. Broser, and W. Richter
Advanced Materials for Optics and Electronic 3 (1994), 11