Prof. Dr. Michael Kneissl
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Institut für Festkörperphysik
Office EW 6-1
email: firstname.lastname@example.org 
Michael Kneissl received his doctoral degree (Dr. rer. nat.) in physics "summa cum laude" from the Friedrich-Alexander University at Erlangen, Germany, in 1996. During his graduate studies he was also a visiting scholar at the University of California at Berkeley in 1993. He joined the Xerox Palo Alto Research Center (PARC)  in 1996 as Research Associate, became Member of the Research Staff in 1997 and was promoted to Principal Scientist in 2004. After nine years in California, he returned to Germany in 2005, for a Full Professor position at the Institute of Solid State Physics at the Technische Universität Berlin . He holds a joint appointment at the Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH)  in Berlin, where he heads the GaN-Optoelectronics Business Area. In 2007 he became Chairman of the new Center of Excellence „Semiconductor Nanophotonics“(Sfb 787)  funded by the German Research Foundation (DFG) and in 2011 he was appointed Executive Director of the Institute of Solid State Physics at TU Berlin.
His interests include wide-bandgap semiconductors, particularly metal organic vapor phase epitaxy (MOVPE) of InAlGaN nanostructures and novel optoelectronic devices. Major milestones include the first demonstration of GaN-based distributed feedback (DFB) lasers, the first InGaN thin-film LEDs by excimer laser-lift-off, the first InGaN multiple-quantum-well (MQW) laser diodes transferred onto copper and diamond substrates, the realization of Q-switched two-section InGaN laser diodes, the demonstration of unidirectional emission from spiral-shaped microcavity disk lasers and the realization of GaN-based vertical external cavity surface emitting lasers (VECSELs) in the blue-violet spectral range. More recently his research has focused on the development of semiconductor ultraviolet optical sources. Among recent accomplishments are the first demonstrations of ultraviolet laser diodes with AlGaN and InAlGaN MQW active regions as well as the first demonstration of current-injection laser diodes grown on bulk AlN substrates. Another focus is the development of high-efficiency light emitting diodes (LEDs) emitting in the near and far UV spectral range and the realization of UV LED modules for various applications, including water purification, phototherapy and sensing.
Michael Kneissl has co-authored more than 300 publications, five book chapters, and holds more than 50 patents. He recently co-edited a book on "III-Nitride Ultraviolet Emitters - Technology & Applications" published in the Springer Series on Material Science. He was the recipient of a "Xerox Team Excellence Award in Research and Technology" in 1997 for the realization of blue laser diodes for printing applications and a "Xerox Corporate Research Group Achievement Award" in 1999 for the demonstration of a GaN-based continuous-wave blue-violet laser. He received PARC's "Golden Acorn Award" in 2002 and 2003, respectively, for patents in the area of GaN laser devices and technology. He also received the Defense Advanced Research Projects Agency's (DARPA) "Outstanding Performer Award" in 2003 for his contributions in the DARPA/MTO Semiconductor Ultraviolet Sources (SUVOS) program. Recently, he was elevated to 2016 IEEE Fellow for his contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs.
- "The emergence and prospects of deep ultraviolet light emitting diode technologies", Kneissl et al., Nature Photonics 13, 233 (2019) 
- "III-Nitride Ultraviolet Emitters - Technology and Applications" Michael Kneissl, Jens Rass (eds), Springer Series in Materials Science Vol. 227