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TU Berlin

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Epitaxy of nanostructures


Our research focuses on the technologically relevant materials system gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN). The growth of heterostructures, quantum wells and quantum dots are performed by metal organic vapor phase epitaxy (MOVPE). For the characterization of nanomaterials a host of analytical tools are available, including in-situ spectroscopic ellipsometry / reflectometry, high resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence spectroscopy (PL) and Hall-effect measurements. In exploring new nanomaterials we are mainly interested in the following topics

  • MOVPE of AlGaN and InAlGaN quantum wells (QWs) for light emitters in the entire ultraviolet (UV) spectral range. Key challenges are new approaches to defect reduction and doping of these semiconductor materials and the analysis of the structural and optical properties of the quantum wells.

  • Epitaxial growth of InGaN heterostructures on non-polar and semi-polar GaN surfaces for laser diodes in the blue-green spectrum and long-wavelength LEDs.
  • Growth of GaN and InGaN quantum dots for single photon emitters (SPE). In this project, various approaches for the growth of GaN and InGaN quantum dot structures are investigated by MOVPE.

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