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Publications 2021

  1. Erik Freier, Johannes Glaab, Jan Ruschel, Veit Hoffmann, Ji Hye Kang, Maria Norman-Reiner, Hans Wenzel, Michael Kneissl, Sven Einfeldt, "Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device's operating voltage",
    Journal of Physics D: Applied Physics 54, 135103 (2021).
  2. Frank Mehnke, Christian Kuhn, Martin Guttmann, Luca Sulmoni, Verena Montag, Johannes Glaab, Tim Wernicke, and Michael Kneissl, "Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm",
    Photonics Research (2021).

Publications 2020

  1. S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R. W. Martin, P. A. Shields, M. Kneissl, and M. Weyers, "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angleby metalorganic vapor phase epitaxy",
    Journal of Crystal Growth 531, 125343 (2020)
  2. Sylvia Hagedorn, Sebastian Walde, Norman Susilo, Carsten Netzel, Nadine Tillner, Ralph-Stephan Unger, Phillip Manley, Eviathar Ziffer, Tim Wernicke, Christiane Becker, Hans-Jürgen Lugauer, Michael Kneissl, and Markus Weyers, "Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes",
    Phys. Status Solidi A 217, 1900796 (2020).
  3. Fan Ren, Kailash C. Mishra, Hiroshi Amano, John Collins, Jung Han, Won Bin Im, Michael Kneissl, Tae-Yeon Seong, Anant Setlur, Tadek Suski, and Eugeniusz Zych, "Preface—JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki",
    ECS J. Solid State Sci. Technol. 9, 010001 (2020).
  4. Ho-Young Kim, Jong Woo Lee, Young Min Moon, Jeong Tak Oh, Hwan-Hee Jeong, June-O Song, Tae-Yeon Seong, Michael Kneissl, Hiroshi Amano, "Improvement in the reliability of AlGaInP-based light-emitting diode package using optimal silicone and leadframe structure",
    ECS Journal of Solid State Science and Technology 9(1), 015014 (2020).
  5. Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn, Leonardo Cancellara, Carsten Netzel, Neysha Lobo Ploch, Shaojun Wu, Jens Rass, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, Martin Albrecht, Markus Weyers, and Michael Kneissl, "Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire",
    Photonics Research 8, 589 (2020).
  6. Tim Wernicke, Luca Sulmoni, Christian Kuhn, Günther Tränkle, Markus Weyers, Michael Kneissl, "Group III-nitride-based UV laser diodes", in M. Kneissl, A. Knorr, S. Reitzenstein, A. Hoffmann (eds), "Semiconductor Nanophotonics",
    Springer Series in Solid-State Sciences, vol 194, Springer, Cham (2020).
  7. Michael Kneissl, "A Short Introduction to Semiconductor Nanophotonics", in M. Kneissl, A. Knorr, S. Reitzenstein, A. Hoffmann (eds), "Semiconductor Nanophotonics",
    Springer Series in Solid-State Sciences, vol 194, Springer, Cham (2020).
  8. Stefan Freytag, Michael Winkler, Rüdiger Goldhahn, Tim Wernicke, Monir Rychetsky, Ingrid L. Koslow, Michael Kneissl, Duc V. Dinh, Brian Corbett, Peter J. Parbrook, and Martin Feneberg, "Polarization fields in semipolar (20-2-1) and (20-21) InGaN light emitting diodes",
    Appl. Phys. Lett. 116, 062106 (2020).
  9. Michael A. Bergmann, Johannes Enslin, Filip Hjort, Tim Wernicke, Michael Kneissl, and Åsa Haglund, "Thin-film flip-chip UVB LEDs realized by electrochemical etching",
    Appl. Phys. Lett. 116, 121101 (2020).
  10. C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, G. Ferenczi, B. Hourahine, A. Kotzai, S. Kraeusel, G. Kusch, R. W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, D. Thomson, S. Vespucci, M. D. Smith, P. J. Parbrook, J. Enslin, F. Mehnke, C. Kuhn, T. Wernicke, M. Kneissl, S. Hagedorn, A. Knauer, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, J. Bai, Y. Gong, L. Jiu, Y. Zhang, R. M. Smith, T. Wang and A. Winkelmann, "Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope",
    Semicond. Sci. Technol. 35, 054001 (2020).
  11. Sylvia Hagedorn, Sebastian Walde, Arne Knauer, Norman Susilo, Daniel Pacak, Leonardo Cancellara, Carsten Netzel, Anna Mogilatenko, Carsten Hartmann, Tim Wernicke, Michael Kneissl, Markus Weyers, "Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes",
    Phys. Status Solidi A, 190122 (2020).
  12. Ji Hye Kang, Hans Wenzel, Erik Freier, Veit Hoffmann, Olaf Brox, Jörg Fricke, Luca Sulmoni, Mathias Matalla, Christoph Stölmacker, Michael Kneissl, Markus Weyers, and Sven Einfeldt, "Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings",
    Optics Letters 45(4), 935 (2020).
  13. Hyun Kyong Cho, Norman Susilo, Martin Guttmann, Jens Rass, Ina Ostermay, Sylvia Hagedorn, Eviathar Ziffer, Tim Wernicke, Sven Einfeldt, Markus Weyers, Michael Kneissl, "Enhanced wall plug efficiency of AlGaN- based deep-UV LEDs using Mo/Al as p-contact",
    IEEE Photonics Technology Letters 32(14), 891 (2020).
  14. H.K. Cho, J.H. Kang, L. Sulmoni, K. Kunkel, J. Rass , N. Susilo, T. Wernicke, S. Einfeldt, M. Kneissl, "Low resistance n-contacts for UVC LEDs by a two-step plasma etching process",
    Semiconductor Science & Technology 35(9), 095019 (2020).
  15. Bernd Witzigmann, Friedhard Römer, Martin Martens, Christian Kuhn, Tim Wernicke, and Michael Kneissl, "Calculation of optical gain in AlGaN quantum wells for ultraviolet emission",
    AIP Advances 10, 095307 (2020).
  16. L. Sulmoni, F. Mehnke, A. Mogilatenko, M. Guttmann, T. Wernicke, M. Weyers, and M. Kneissl, "Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers",
    Photonics Research 8, 1381 (2020).
  17. I. Prozheev, F. Mehnke, T. Wernicke, M. Kneissl, F. Tuomisto, "Electrical compensation and cation vacancies in Al rich Si-doped AlGaN",
    Appl. Phys. Lett. 117, 142103 (2020).
  18. H. Amano, R. Collazo, C. De Santi, S. Einfeldt, M. Funato, J. Glaab, S. Hagedorn, A. Hirano, H. Hirayama, R. Ishii, Y. Kashima, Y. Kawakami, R. Kirste, M. Kneissl, R. Martin, F. Mehnke, M. Meneghini, A. Ougazzaden, P. J. Parbrook, S. Rajan, P. Reddy, F. Römer, J. Ruschel, B. Sarkar, F. Scholz, L. J. Schowalter, P. Shields, Z. Sitar, L. Sulmoni, T. Wang, T. Wernicke, M. Weyers, B. Witzigmann, Y.-R. Wu, T. Wunderer and Y. Zhang, "The 2020 UV emitter roadmap",
    Journal of Physics D: Applied Physics 53, 503001 (2020).
  19. Neysha Lobo-Ploch, Frank Mehnke, Luca Sulmoni, Hyun Kyong Cho, Martin Guttmann, Johannes Glaab, Katrin Hilbrich, Tim Wernicke, Sven Einfeldt, Michael Kneissl, "Milliwatt power 232 nm AlGaN-based deep UV LEDs on sapphire substrates",
    Appl. Phys. Lett. 117, 111102 (2020).
  20. A. Muhin, M. Guttmann, C. Kuhn, E. Mickein, J. R. Aparici, E. Ziffer, N. Susilo, L. Sulmoni, T. Wernicke and M. Kneissl, "Vertical conductivity and Poole-Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction",
    Appl. Phys. Lett. 117, 252101 (2020).
  21. Filip Hjort, Johannes Enslin, Munise Cobet, Michael A. Bergmann, Johan Gustavsson, Tim Kolbe, Arne Knauer, Felix Nippert, Ines Häusler, Markus R. Wagner, Tim Wernicke, Michael Kneissl, and Åsa Haglund, "A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser",
    ACS Photonics (2020).
  22. Erik Freier, Johannes Glaab, Jan Ruschel, Veit Hoffmann, Ji-Hye Kang, Maria Norman-Reiner, Hans Wenzel, Michael Kneissl, Sven Einfeldt, "Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device operating voltage",
    Journal of Physics D: Applied Physics (2020).
  23. Jan Ruschel, Johannes Glaab, Norman Susilo, Sylvia Hagedorn, Sebastian Walde, Eviathar Ziffer, Hyun Kyong Cho, Neysha Lobo Ploch, Tim Wernicke, Markus Weyers, Sven Einfeldt, Michael Kneissl, "Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities",
    Appl. Phys. Lett. 117, 241104 (2020).
  24. Humberto M. Foronda, Daniel A. Hunter, Mike Pietsch, Luca Sulmoni, Anton Muhin, Sarina Graupeter, Norman Susilo, Johannes Enslin, Klaus Irmscher, Robert W. Martin, Tim Wernicke, Michael Kneissl, "Electrical properties of (11-22) AlGaN:Si layers at high Al contents grown by metal-organic vapor phase epitaxy",
    Appl. Phys. Lett. 117, 221101 (2020).

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