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Publications 2011

  1. Tim Wernicke, Simon Ploch, Veit Hoffmann, Arne Knauer, Markus Weyers, and Michael Kneissl, Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates, phys. stat. sol. (b) 248, No. 3, 574 (2011).
  2. M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl, Crystall orientation of GaN layers on (10-10) Sapphire, phys. stat. sol. (b) 248, No.3, 583 (2011).
  3. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research 45, 1481 (2011).
  4. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011).
  5. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface band bending at GaAs(001) surfaces, Phys. Rev. B 83, 045307 (2011)
  6. J. Stellmach M. Pristovsek, Ö. Savas, J. Schlegel, E. V. Yakovlev, M. Kneissl, High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor, Journal of Crystal Growth 315, 229 (2011).
  7. L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, Polarization dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells, phys. stat. sol. (b) 248, No.3, 638 (2011).
  8. F. Ivaldi, J. Domagala, S. Kret, Ch. Meissner, M. Pristovsek, M. Högele, and M. Kneissl, Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE, Jpn. J. of Appl. Phys. 50, No. 3, (2011).
  9. T. Kolbe, A. Knauer, J. Stellmach, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes, Proc. SPIE 7939, 79391G (2011).
  10. P. Kleinschmidt, H. Döscher, P. Vogt, T. Hannappel, Direct observation of dimer flipping at H-terminated InP and GaP (001) surfaces, Phys. Rev. B 83, 155316 (2011)
  11. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001), J. Nanoparticle Research. (online) DOI 10.1007/s11051-011-0340-0
  12. M. Martens, J. Schlegel, P. Vogt, F. Brunner., R. Lossy, J. Würfl, M. Weyers, M. Kneissl, High gain UV photodetectors based on AlGaN/GaN heterostructures for optical switching, Appl. Phys. Lett. 98, 211114 (2011); doi:10.1063/1.3595303.
  13. Michael Kneissl, Tim Kolbe, Jessica Schlegel, Joachim Stellmach, Chris Chua, Zhihong Yang, Arne Knauer, Markus Weyers, Noble M. Johnson, AlGaN-based Ultraviolet Lasers - Applications and Materials Challenges, OSA Technical Digest (CD) (Optical Society of America, 2011), JTuB1 (2011).
  14. Carsten Netzel, Soheil Hatami, Veit Hoffmann, Tim Wernicke, Arne Knauer, Michael Kneissl, and Markus Weyers, GaInN quantum well design and measurement conditions affecting the emission energy S-shape, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000956.
  15. R. Aleksiejunas, L. Lubys, M. Vengris, K. Jarasiunas, T. Wernicke, V. Hoffmann, C. Netzel, A. Knauer, M. Weyers, and M. Kneissl, Study of excess carrier dynamics in polar, semipolar, and non-polar InGaN epilayers and QWs, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000973.
  16. Michael Kneissl & Jens Raß, Blue and green-emitting laser diodes, Landolt-Börnstein VIII-Vol. B Part III – Laser System, 27-42, Berlin, Heidelberg, New York: Springer (2011).
  17. S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl, Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy, J Cryst. Growth 331, 25 (2011).
  18. L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M.Weyers, and M. Kneissl, On the optical polarization properties of semipolar InGaN quantum wells, Appl. Phys. Lett 99, 051103 (2011).
  19. A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, and M. Kneissl, ‘Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy’, J. Cryst. Growth 334, 40 (2011).
  20. C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, A Vescan, M Weyers, M Kneissl, Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells, Semicond. Sci. Technol. 26, 105017 (2011).
  21. M. Pristovsek, A. Kadir, Ch. Meissner, T. Schwaner, M. Leyer, M. Kneissl, Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy, J. Appl. Phys. 110 (7) 073527(2011).
  22. J.Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse,  A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl, Polarization dependent study of gain anisotropy in semipolar InGaN lasers, Appl. Phys. Lett. 99 (17) 171105 (2011).
  23. L. Riele, T. Bruhn, R. Passmann, V. Rackwitz, B. O. Fimland, P. Vogt, Reconstruction dependent epitaxial growth of lead-phthalocyanine films on GaAs(001) surfaces, Phys. Rev. B 84, 205317 (2011).
  24. Viola Kueller, Arne Knauer, Frank Brunner, Anna Mogilatenko, Michael Kneissl, Markus Weyers, Investigation of inversion domain formation in AlN grown on sapphire by MOVPE, phys. stat. sol. (c) (2011), DOI: 10.1002/pssc.201100495
  25. L. Schade, U. T. Schwarz, T.Wernicke, S. Ploch, M.Weyers, M. Kneissl, Spectral properties of polarized light from semipolar grown InGaN quantum wells, phys. stat. sol. (c) (2011), DOI:10.1002/pssc.201100493
  26. T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodesAppl. Phys. Lett. 99, 261105 (2011).
  27. V. Kueller, A. Knauer, U. Zeimer, H. Rodriguez, A. Mogilatenko, M. Kneissl, M. Weyers, (Al,Ga)N overgrowth over AlN ridges oriented in [11-20] and [1-100] direction, phys. stat. solidi (c) 8, 2022–2024 (2011).


2017

  1. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017)
  2. Gunnar Kusch, Frank Mehnke, Johannes Enslin, Paul R. Edwards, Tim Wernicke, Michael Kneissl, and Robert W. Martin, Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy, Semiconductor Science & Technology, 32 (3), 035020 (2017)
  3. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Defect-Related Degradation of AlGaN-Based UV-B LEDs, IEEE Transactions on Electron Devices 64 (1), 200 (2017)
  4. J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo Ploch, T. Wernicke, M. Weyers, M. Kneissl, Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs, Journal of Crystal Growth 464, 185 (2017)
  5. Martin Martens, Christian Kuhn , Tino Simoneit , Sylvia Hagedorn , Arne Knauer , Tim Wernicke , Markus Weyers , Michael Kneissl, The effects of Magnesium doping on the modal loss in AlGaN-based deep UV lasers, Applied Physics Letters 110, 081103 (2017)
  6. Ji Hye Kang, Martin Martens, Hans Wenzel, Veit Hoffmann, Wilfred John, Sven Einfeldt, Tim Wernicke, Michael Kneissl, Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings, IEEE Photonics Technology Letters 29 (1), 138 (2017)
  7. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, Michael Kneissl, Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterization,  SPIE Proc. Vol. X, 101240T (2017)
  8. Mickael Lapeyrade, Johannes Glaab, Arne Knauer, Christian Kuhn, Johannes Enslin, Christoph Reich, Martin Guttmann, Frank Mehnke, Tim Wernicke, Sven Einfeldt, Markus Weyers, Michael Kneissl, Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern, Semiconductor Science and Technology 32 (4), 045019 (2017)
  9. Carlo De Santi, Matteo Meneghini, Desiree Monti, Johannes Glaab, Martin Guttmann, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs, Photonics Research 5 (2), A44 (2017).
  10. Markus Pristovsek, Konrad Bellman, Frank Mehnke, Joachim Stellmach, Tim Wernicke, Michael Kneissl, Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy, phys. status solidi B 254 (8), 1600711 (2017)
  11. Philipp Elmlinger, Martin Schreivogel, Simon Weida, Michael Kneissl, A Miniaturized UV-LED Based Optical Gas Sensor Utilizing Silica Waveguides for the Measurement of Nitrogen Dioxide and Sulphur Dioxide, MDPI Proceedings 2017, 1, 556 (2017), doi:10.3390/proceedings1040556
  12. Mickael Lapeyrade, Sabine Alamé, Johannes Glaab, Anna Mogilatenko, Ralph-Stephan Unger, Christian Kuhn, Tim Wernicke, Patrick Vogt, Arne Knauer, Ute Zeimer, Sven Einfeldt, Markus Weyers, Michael Kneissl, Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N, Journal of Applied Physics 122 (12), 125701 (2017)
  13. Hyun Kyong Cho, Olaf Krüger, Alexander Külberg, Jens Rass, Ute Zeimer, Tim Kolbe, Arne Knauer, Sven Einfeldt, Markus Weyers, Michael Kneissl, Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate, Semiconductor Science and Technology (2017), doi:10.1088/1361-6641/aa9402
  14. K. Bellmann, U.W. Pohl, C. Kuhn, T. Wernicke, and M. Kneissl, Controlling the morphology transition between step-flow growth and step-bunching growth, Journal of Crystal Growth 478, 187 (2017)
  15. Hyun Kyong Cho, Ina Ostermay, Ute Zeimer, Johannes Enslin, Sven Einfeldt, Markus Weyers, Michael Kneissl, Highly reflective p-contacts made of Pd-Al on deep ultraviolet light-emitting diodes, IEEE Photonics Technology Letters 29 (24), 2222 (2017)
  16. Tim Kolbe, Arne Knauer , Jens Rass , Hyun Kyong Cho, Sylvia Hagedorn, Sven Einfeldt, Michael Kneissl, Markus Weyers, Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes, Materials 10 (12),1396 (2017)
  17. Norman Susilo, Johannes Enslin, Luca Sulmoni, Martin Guttmann, Ute Zeimer, Tim Wernicke, Markus Weyers, Michael Kneissl, Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs, phys. stat. sol. (a), 1700643 (2017)
  18. J.H. Kang, H. Wenzel, V. Hoffmann, L. Sulmoni, W. John, S. Einfeldt, T. Wernicke, M. Kneissl, DFB laser diodes based on GaN using 10th order laterally coupled surface gratings, IEEE Photonics Technology Letters (2017), DOI: 10.1109/LPT.2017.2780446

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