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Publications 2011

  1. Tim Wernicke, Simon Ploch, Veit Hoffmann, Arne Knauer, Markus Weyers, and Michael Kneissl, Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates, phys. stat. sol. (b) 248, No. 3, 574 (2011).
  2. M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl, Crystall orientation of GaN layers on (10-10) Sapphire, phys. stat. sol. (b) 248, No.3, 583 (2011).
  3. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research 45, 1481 (2011).
  4. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011).
  5. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface band bending at GaAs(001) surfaces, Phys. Rev. B 83, 045307 (2011)
  6. J. Stellmach M. Pristovsek, Ö. Savas, J. Schlegel, E. V. Yakovlev, M. Kneissl, High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor, Journal of Crystal Growth 315, 229 (2011).
  7. L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, Polarization dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells, phys. stat. sol. (b) 248, No.3, 638 (2011).
  8. F. Ivaldi, J. Domagala, S. Kret, Ch. Meissner, M. Pristovsek, M. Högele, and M. Kneissl, Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE, Jpn. J. of Appl. Phys. 50, No. 3, (2011).
  9. T. Kolbe, A. Knauer, J. Stellmach, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes, Proc. SPIE 7939, 79391G (2011).
  10. P. Kleinschmidt, H. Döscher, P. Vogt, T. Hannappel, Direct observation of dimer flipping at H-terminated InP and GaP (001) surfaces, Phys. Rev. B 83, 155316 (2011)
  11. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001), J. Nanoparticle Research. (online) DOI 10.1007/s11051-011-0340-0
  12. M. Martens, J. Schlegel, P. Vogt, F. Brunner., R. Lossy, J. Würfl, M. Weyers, M. Kneissl, High gain UV photodetectors based on AlGaN/GaN heterostructures for optical switching, Appl. Phys. Lett. 98, 211114 (2011); doi:10.1063/1.3595303.
  13. Michael Kneissl, Tim Kolbe, Jessica Schlegel, Joachim Stellmach, Chris Chua, Zhihong Yang, Arne Knauer, Markus Weyers, Noble M. Johnson, AlGaN-based Ultraviolet Lasers - Applications and Materials Challenges, OSA Technical Digest (CD) (Optical Society of America, 2011), JTuB1 (2011).
  14. Carsten Netzel, Soheil Hatami, Veit Hoffmann, Tim Wernicke, Arne Knauer, Michael Kneissl, and Markus Weyers, GaInN quantum well design and measurement conditions affecting the emission energy S-shape, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000956.
  15. R. Aleksiejunas, L. Lubys, M. Vengris, K. Jarasiunas, T. Wernicke, V. Hoffmann, C. Netzel, A. Knauer, M. Weyers, and M. Kneissl, Study of excess carrier dynamics in polar, semipolar, and non-polar InGaN epilayers and QWs, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000973.
  16. Michael Kneissl & Jens Raß, Blue and green-emitting laser diodes, Landolt-Börnstein VIII-Vol. B Part III – Laser System, 27-42, Berlin, Heidelberg, New York: Springer (2011).
  17. S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl, Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy, J Cryst. Growth 331, 25 (2011).
  18. L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M.Weyers, and M. Kneissl, On the optical polarization properties of semipolar InGaN quantum wells, Appl. Phys. Lett 99, 051103 (2011).
  19. A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, and M. Kneissl, ‘Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy’, J. Cryst. Growth 334, 40 (2011).
  20. C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, A Vescan, M Weyers, M Kneissl, Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells, Semicond. Sci. Technol. 26, 105017 (2011).
  21. M. Pristovsek, A. Kadir, Ch. Meissner, T. Schwaner, M. Leyer, M. Kneissl, Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy, J. Appl. Phys. 110 (7) 073527(2011).
  22. J.Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse,  A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl, Polarization dependent study of gain anisotropy in semipolar InGaN lasers, Appl. Phys. Lett. 99 (17) 171105 (2011).
  23. L. Riele, T. Bruhn, R. Passmann, V. Rackwitz, B. O. Fimland, P. Vogt, Reconstruction dependent epitaxial growth of lead-phthalocyanine films on GaAs(001) surfaces, Phys. Rev. B 84, 205317 (2011).
  24. Viola Kueller, Arne Knauer, Frank Brunner, Anna Mogilatenko, Michael Kneissl, Markus Weyers, Investigation of inversion domain formation in AlN grown on sapphire by MOVPE, phys. stat. sol. (c) (2011), DOI: 10.1002/pssc.201100495
  25. L. Schade, U. T. Schwarz, T.Wernicke, S. Ploch, M.Weyers, M. Kneissl, Spectral properties of polarized light from semipolar grown InGaN quantum wells, phys. stat. sol. (c) (2011), DOI:10.1002/pssc.201100493
  26. T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodesAppl. Phys. Lett. 99, 261105 (2011).
  27. V. Kueller, A. Knauer, U. Zeimer, H. Rodriguez, A. Mogilatenko, M. Kneissl, M. Weyers, (Al,Ga)N overgrowth over AlN ridges oriented in [11-20] and [1-100] direction, phys. stat. solidi (c) 8, 2022–2024 (2011).


Publications 2010

  1. C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, M. Kneissl, and N. Szabo, Influence of the wave function overlap in GaInN quantum wells on the temperature and excitation power dependent photoluminescence intensity, Journal of Applied Physics 107, 033510 (2010).
  2. N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt , M. Weyers and M. Kneissl, Enhancement of light extraction in UV LEDs using nanopixel contact design with Al reflector, Appl. Phys. Lett. 96, 081109 (2010) DOI: 10.1063/1.3334721.
  3. J. R. van Look, S. Einfeldt, V. Hoffmann, A. Knauer, M. Weyers, P. Vogt and M. Kneissl, Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates, IEEE Photonics Tech. Lett, vol. 22, is. 6, 416 (2010).
  4. Duc Dinh, M. Pristovsek, R. Kremzow, M. Kneissl, Growth of semipolar (10-1-3) InN on m-plane sapphire using MOVPE, Phys. stat. sol. (RRL) 4, No. 5-6, 127 (2010) / DOI 10.1002/pssr.201004043.
  5. R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. brauch, T. Graf, M. Weyers, M. Kneissl; InGaN/GaN Disk Laser for Blue-Violet Emission Wavelengths; IEEE Photonics Technology Letters 22 (9), 652 (2010).  
  6. U. Zeimer, U. Jahn, V. Hoffmann, M. Weyers, M. Kneissl, Optical and structural properties of InGaN/(AlIn)GaN multiple quantum wells grown at different temperatures and In supply, Journal of Electronic Materials, Vol. 39, 677 (2010).
  7. T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl, Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes, phys. stat. sol. (c) (2010), DOI: 10.1002/pssc.200983629.
  8. T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl, (In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width, phys. stat. sol. (a) 207 (2010). DOI: 10.1002/pssa.201026046.
  9. R. Kremzow, M. Pristovsek, J. Stellmach, Ö. Savaş, M. Kneissl, Metalorganic Vapor Phase Epitaxy of InN on GaN using tertiary-butylhydrazine as Nitrogen Source, Journal of Crystal Growth (2010), DIO:10.1016/j.jcrysgro.2010.03.019.
  10. Jens Raß, Tim Wernicke, Raimund Kremzow, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers, Michael Kneissl, Facet formation for laser diodes on nonpolar and semipolar GaN, phys. stat. sol. (a) (2010), DOI 10.1002/pssa.200983425.
  11. S. Ploch, M. Frentrup, T.Wernicke, M. Pristovsek, M. Weyers, M. Kneissl, Orientation control of GaN {11-22} and {10-13} grown on (10-10) sapphire by metal-organic vapor phase epitaxy, J Cryst. Growth, 312, 2171 (2010).
  12. T. Bruhn, R. Paßmann, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface electric field at GaAs(001)-c(4x4) measured via the linear electro-optic effect, phys. stat. sol. (b) (2010).
  13. M. Pristovsek, Determination of the complex linear electro-optic coefficient of GaAs and InP, physica status solidi (b) 247, 1974-1978 (2010) DOI:10.1002/pssb.200983950.
  14. Carsten Netzel, Veit Hoffmann, Tim Wernicke, Arne Knauer, Markus Weyers, Hans Wenzel, and Michael Kneissl, Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells, phys. stat. sol. (c), 1872 (2010).
  15. M. Kneissl, T. Kolbe, N. Lobo, J. Stellmach, A. Knauer, V. Kueller, H. Rodriguez, S. Einfeldt, M. Weyers, Advances in InAlGaN-based deep UV light emitting diode technologies, Proceedings of the 12th International Symposium on the Science and Technology of Light Sources and the 3rd International Conference on White LEDs and Solid State Lighting, LS-WLED 2010, 265-268 (2010).
  16. W. W. Chow, M. H. Crawford and J. Y. Tsao, M. Kneissl, Internal efficiency of InGaN light-emitting diodes: Beyond a quasi-equilibrium model, Appl. Phys. Lett. 97, 121105 (2010).
  17. V. Hoffmann, C. Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, M. Weyers, G. Tränkle, M. Kneissl, Well width study of InGaN multiple quantum well structures for blue-green emitters, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.09.013
  18. V. Hoffmann, A. Knauer, C. Brunner, S. Einfeldt, M. Weyers, G.Tränkle, K. Haberland, J.-T. Zettler, M. Kneissl, Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.09.0484.
  19. H. Rodriguez, N. Lobo, S. Einfeldt, A. Knauer, M. Weyers and M.Kneissl, GaN-based Ultraviolet Light-Emitting Diodes with Multifinger Contacts, phys. stat. sol. (a), (2010), DOI: 10.1002/pssa.201026193
  20. V. Küller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Weyers, and M. Kneissl, Growth of AlGaN and AlN on Patterned AlN/Sapphire Templates, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.06.040
  21. T. Kolbe, A. Knauer, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 97, 171105 (2010).
  22. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research (2010), doi: 10.1016/j.watres.2010.11.015.
  23. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011)

Publications 2014

  1. P. Vogt, P. Capiod, M. Berthe, A. Resta, P. De Padova, T. Bruhn, G. Le Lay, B. Grandidier, Synthesis and elecrtrical conductivity of multilayer silicene, Appl. Phys. Lett. 104, 021602 (2014). V. Hoffmann, A. Mogilatenko, C.
  2. V. Hoffmann, A. Mogilatenko, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes, Journal of Crystal Growth 391, 46 (2014), DOI: 10.1016/j.jcrysgro.2013.12.046
  3. M. Martens, F. Mehnke, C. Kuhn, C. Reich, T. Wernicke, J. Rass, V. Küller, A. Knauer, C. Netzel, M. Weyers, M. Bickermann, M. Kneissl, Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates, IEEE Photonics Tech. Lett., 26, 342 (2014)
  4. C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, M Weyers, Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers, Applied Physics Letters 104, 051906 (2014)
  5. L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, Surface topology caused by dislocations in polar, semipolar and nonpolar InGaN/GaN heterostructures, phys. stat. sol. (a) 211, 756 (2014), DOI: 10.1002/pssa.201300448
  6. A. Mogilatenko, H. Kirmse, J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Kneissl, M. Weyers, Analysis of crystal orientation in AlN layers grown on m-plane sapphire, Journal of Crystal Growth 400, 54 (2014); dx.doi.org/10.1016/j.jcrysgro.2014.04.014 (2014)
  7. D. Skuridina, D. V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl, P. Vogt Surface and crystal structure structure of nitridated sapphire substrates and their effect on polar InN layers, Appl. Surf. Sci. 307, 461-467 (2014)
  8. Neil W. Johnson, Patrick Vogt, Andrea Resta, Paola De Padova, Israel Perez, David Muir, Ernst Z. Kurmaev, Z. Kurmaev, Guy Le Lay, and Alexander Moewes, The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)  Adv. Funct. Mater. (2014), online 14.06.2014, DOI: 10.1002/adfm.201400769
  9. Zhi-Long Liu, Mei-Xiao Wang, Jin-Peng Xu, Jian-Feng Ge, Guy Le Lay, Patrick Vogt, Dong Qian, Chun-Lei Gao, Canhua Liu, Jin-Feng Jia Various atomic structures of monolayer silicene fabricated on Ag(111), New Journal of Physics 16, 075006 (2014).
  10. F. Mehnke, C. Kuhn, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, T. Wernicke, J. Rass, M. Weyers, and M. Kneissl, Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 105, 051113 (2014).
  11. J. B. Park, T. Niermann, D. Berger, A. Knauer, I. Koslow, M. Weyers, M. Kneissl, and M. Lehmann, Impact of electron irradiation on electron holographic potentiometry, Appl. Phys. Lett 105, 094102 (2014).
  12. Sebastian Friede, Sergei Kuehn, Jens W Tomm, Veit Hoffmann, Ute Zeimer, Markus Weyers, Michael Kneissl and Thomas Elsaesser, Nano-optical analysis of GaN-based diode lasers, Semicond. Sci. Technol. 29 112001 (2014)
  13. Xiao-Hang Li, Theeradetch Detchprohm, Tsung-Ting Kao, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Russell D. Dupuis, Shuo Wang, Yong O. Wei, Hongen Xie, Alec M. Fischer, Fernando A. Ponce, Tim Wernicke, Christoph Reich, Martin Martens, and Michael Kneissl, Low threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple quantum well based lasers grown on sapphire substrates, Appl. Phys. Lett. 105, 141106 (2014).
  14. Jörg Jeschke, U. Zeimer, L. Redaelli, S. Einfeldt, M. Kneissl, M. Weyers, Effect of quantum well non-uniformities on lasing threshold, linewidth and lateral near field filamentation in violet (Al,In)GaN laser diodes , Appl. Phys. Lett 105, 173501 (2014).
  15. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth, doi:10.1016/j.jcrysgro.2014.11.016 (2014).
  16. G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, AIP Advances 4, 127101 (2014).
  17. Zhi-Long Liu,Mei-Xiao Wang, Canhua Liu, Jin-Feng Jia, Patrick Vogt, Claudio Quaresima, Carlo Ottaviani, Bruno Olivieri, Paola De Padova, Guy Le Lay, The fate of the 2√3 × 2√3R(30◦) silicene phase on Ag(111), APL MATERIALS 2, 092513 (2014).
  18. D. Papadimitriou, G. Roupakas, E. Chatzitheodoridis, G. Halampalakis, S. Tselepis, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel, S. Alamé, P. Vogt, M. Kneissl, Chemical and electrochemical processing of high quality CIS/CIGS absorber, buffer window, and anti-reflective coating for low cost photovoltaic technology, Proceedings EU PVSEC 2014, 1812-1815 (2014).

Publications 2013

  1. N. Lobo Ploch, H. Rodriguez, C. Stölmacker, M. Hoppe, M. Lapeyrade, J. Stellmach, F. Mehnke, Tim Wernicke, A. Knauer, V. Kueller, M. Weyers, S. Einfeldt, M. Kneissl, Effective Thermal Management in Ultraviolet Light Emitting Diodes with Micro-LED Arrays, IEEE Trans Electron Devices, Vol. 60 (2) 782-786 (2013)
  2. J. Stellmach, F, Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T. Wernicke, M. Kneissl, Structural and optical properties of semipolar (11-22) AlGaN grown on (10-10) sapphire by metal-organic vapour phase epitaxy, Journal of Crystal Growth 367 (2013) 42-47, DOI: 10.1016/j.jcrysgro.2013.01.006 (2013)
  3. J. Bläsing, P. Veit, A. Dadgar, A. Krost, V. Holý, S. Ploch, M. Frentrup, T. Wernicke, and M. Kneissl, Growth and characterization of stacking fault reduced GaN (10-13) on sapphire, J. Phys. D: Appl. Phys. 46, 125308 (2013)
  4. V. Kueller, A. Knauer, U. Zeimer, M. Kneissl, and M. Weyers, Controlled coalescence of MOVPE grown AlN during lateral overgrowth, Journal of Crystal Growth DOI: 10.1016/j.jcrysgro.2013.01.028 (2013)
  5. M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret, Growth mode transition and relaxation of thin InGaN layers on GaN (0001), J. Crystal Growth 372, 65 (2013)
  6. M. Pristovsek, R. Kremzow, M. Kneissl, Energetics of InGaAs quantum dot formation and relaxation on GaAs (001), Jpn. J. Appl. Phys., Vol. 52 (4), 041201 (2013).
  7. P. De Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasegawa, M. C. Asensio, G. Le Lay, Evidence of Dirac Fermions in Multilayer Silicene Appl. Phys. Lett. 102, 163106 (2013).
  8. Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl, Role of nitridation on the growth and the polarity of InN by metal-organic vapor phase epitaxy, J. Crystal Growth, 376, 17-22 (2013).
  9. Michael Kneissl, Jens Rass, Lukas Schade, Ulrich T. Schwarz, Growth and optical properties of GaN-based non- and semipolar LEDs, Seong, T.-Y.; Han, J.; Amano, H.; Morkoç, H. (Eds.), III-Nitride Based Light Emitting Diodes and Applications (Topics in Applied Physics, Vol. 126), 83-119, Berlin, Heidelberg, New York: Springer (2013).
  10. U. Zeimer, V. Kueller, A. Knauer, A. Mogilatenko, M. Weyers, M. Kneissl, High quality AlGaN grown on ELO AlN/sapphire templates, J. Crystal Growth 377, 32 (2013)
  11. J. Schlegel, M. Brendel, M. Martens, A. Knigge, J. Rass, S. Einfeldt, F. Brunner,M. Weyers, and M. Kneissl, Influence of carrier lifetime, transit time and operation voltages on the photoresponse of visible-blind AlGaN MSM photodetectors, Jpn. J. Appl. Phys. 52,  DOI: 10.7567/JJAP.52.08JF01 (2013)
  12. Jens Rass, Simon Ploch, Tim Wernicke, Martin Frentrup, Markus Weyers, and Michael Kneissl, Waveguide optimization for semipolar (In,Al,Ga)N laser diodes, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JG12 (2013)
  13. Duc V. Dinh, S. Solopow, M. Pristovsek, M. Kneissl, Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JD03 (2013)
  14. J. Avila, P. De Padova, S. Cho, I. Colambo, S. Lorcy, C. Quaresima, P. Vogt, A. Resta, G. Le Lay and M. C.Asensio, Presence of gapped silicene-derived band in the prototypical (3x3) silicene phase on silver (111) surfaces, (Fast Track Communication) J. Phys.: Cond. Mat. 25, 262001 (2013).
  15. M. Pristovsek, A. Kadir, M. Kneissl, Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys., Vol. 52 , DOI: 10.7567/JJAP.52.08JB23 (2013).
  16. L. Redaelli, A. Muhin, S. Einfeldt, P. Wolter, L. Weixelbaum and M. Kneissl, Ohmic Contacts on N-face n-type GaN after Low Temperature Annealing, IEEE Phot. Techn. Lett. 25 (13), 1278 (2013).
  17. T. Kolbe, F. Mehnke, M. Guttmann, C. Kuhn, J. Rass, T. Wernicke and M. Kneissl, Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure, Appl. Phys. Lett., 103, 031109 (2013)
  18. A. Resta, T. Leoni, C. Barth, A. Ranguis, C. Becker, T. Bruhn, P. Vogt & G. Le Lay, Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations, Sci. Rep. 3, 2399 (2013).
  19. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, STM analysis of defects at the GaAs(001)-c(4x4) surface, Surf. Sci. 617, 162–166 (2013). http://dx.doi.org/10.1016/j.susc.2013.07.012
  20. L. Redaelli, H. Wenzel, M. Martens, S. Einfeldt, M. Kneissl, and G. Tränkle, "Index antiguiding in narrow ridge-waveguide (In, AI)GaN based laser diodes," Journal of Applied Physics 114, 113102 (2013)
  21. M. Kneissl, T. Wernicke, Optical and structural properties of InGaN light emitters on non- and semipolar GaN, B. Gil (Ed.), III-nitride semiconductors and their modern devices (Series on Semiconductor Science and Technology 18), 244-279, New York: Oxford University Press (2013)
  22. P. De Padova, J. Avila, A. Resta, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T.  Bruhn, P. Vogt, M. C.  Asensio, G. Le Lay The quasiparticle band dispersion in epitaxial multilayer silicene, J. Phys.: Condens. Matter 25, 382202 (2013) (IOP select)
  23. D. Skuridina, D. Dinh, M. Pristovsek, B. Lacroix, P. Ruterana, M. Hoffmann, S. Zlatko, M. Kneissl, P. Vogt, Polarity determination of InN and GaN by valence band photoelectron spectroscopy, J. Appl. Phys. 114, 173503 (2013)
  24. M. Lapeyrade, Anton Muhin, Sven Einfeldt, Ute Zeimer, Anna Mogilatenko, Markus Weyers, Michael Kneissl, Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces, Semicond. Sci. Technol. 28 (2013), doi:10.1088/0268-1242/28/12/125015
  25. C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M.Kneissl, Excitonic recombination in epitaxial lateral overgrown AlN on sapphire, Appl. Phys. Lett. 103, 212108, (2013).
  26. F. Mehnke, T. Wernicke, H. Pinhel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, M. Kneissl, Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%, Appl. Phys. Lett. 103, 212109, (2013).
  27. N. Lobo-Ploch, S. Einfeldt, M. Frentrup, J. Rass, T. Wernicke, A. Knauer, V. Küller, M. Weyers and M. Kneissl, Investigation of the temperature dependent efficiency droop in UV LEDs, Semicond. Sci. Technol. 28 , 125021, (2013), doi:10.1088/0268-1242/28/12/125021
  28. M. Frentrup, N. Hatui, T. Wernicke, J. Stellmach, A. Bhattacharya and M. Kneissl, Determination of lattice parameters, strain state, and composition in semipolar III-nitrides using high resolution X-ray diffraction, Journal of Applied Physics 114, 213509 (2013); doi: 10.1063/1.4834521
  29. P.Vogt, N.Esser, Surface and interface Science, Volume 3, Chapter Compound Semiconductor Surfaces, Ed. K. Wandelt, Wiley-VCH, November 2013; ISBN: 978-3-527-41157-3.

Publications 2012

  1. J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson and T. Kolbe, Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells, Appl. Phys. Lett. 100, 021101 (2012).
  2. Tim Wernicke, Lukas Schade, Carsten Netzel, Jens Rass, Veit Hoffmann, Simon Ploch, Arne Knauer, Markus Weyers, Ulrich Schwarz, Michael Kneissl, Indium incorporation and emission wavelength of polar, nonpolar, and semipolar InGaN quantum wells, Semiconductor Science & Technology 27, 024014 (2012).
  3. S. Ploch, T. Wernicke, D. V. Dinh M. Pristovsek, M. Kneissl, Surface diffusion and layer morphology of {11-22} GaN layers grown by metal-organic vapor phase epitaxy, J. Appl Phys. 111, 033526 (2012).
  4. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, Adsorption of pyrrole on GaAs(001) c(4x4): The role of surface defects, Phys. Rev. B 85, 075322 (2012).
  5. S. Pandey, D. Cavalcoli, A. Minj, B. Fraboni, A. Cavallini, D. Skuridina, P. Vogt, M. Kneissl, Mobility Limiting Mechanisms in Polar Semiconductor Heterostructures, Acta Materialia (2012), doi:10.1016/j.actamat.2012.02.025
  6. Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, and M. Kneissl,  Comparison of N- and In-polar InN layers grown by MOVPE, phys. stat. sol. (c) 9, 977 (2012).
  7. Lukas Schade, Ulrich. T. Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, MarkusWeyers, Michael Kneissl, Auger recombination in nonpolar InGaN quantum wells, Proc. SPIE 8262, 82620K (2012), DOI: 10.1117/12.905955
  8. L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, Y. V. Flores, S. Einfeldt, M. Kneissl, G. Tränkle, Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes, Proc. SPIE 8262, 826219 (2012); DOI: 10.1117/12.908368
  9. J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, M. Kneissl, Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN, Proc. SPIE, vol. 8262, no. 826218 (2012).
  10. T. Wunderer, C.L. Chua, J.E. Northrup, Z. Yang, N.M. Johnson, M. Kneissl, G.A. Garrett, H. Shen, M. Wraback, B. Moody, H.S. Craft, R. Schlesser, R.F. Dalmau, Z. Sitar, Optically Pumped UV Lasers Grown on Bulk AlN Substrates, phys. stat. sol. (c) 9, No. 3–4, 822 (2012).
  11. P. Vogt, P. De Padova,C. Quaresima,J. Avila, E. Frantzeskakis, M.Asensio, A. Resta, B. Ealet, G. Le Lay, Silicene: Compelling experimental evidence for graphene-like two-dimensional silicon, Phys. Rev. Lett.  108, 155501 (2012). 
  12. V. Kueller, A. Knauer, F. Brunner, A. Mogilatenko, M. Kneissl, and M. Weyers, "Investigation of inversion domain formation in AlN grown on sapphire by MOVPE", phys. stat. sol. (c), vol. 9, no. 3-4, pp. 496-498 (2012).
  13. Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher; In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces, Phys. Rev B 86, 035308 (2012).
  14. Duc V. Dinh, D. Skuridina, S. Solopow, F. Ivaldi, S.Kret, M. Pristovsek, P. Vogt, M. Kneissl, Growth and characterization of semipolar (11-22) InN, J. Appl. Phys. 112, 013530 (2012).
  15. J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Pristovsek, M. Kneissl, MOVPE growth of semipolar (11-22) AlN on m-plane (10-10) sapphire, J. Cryst. Growth 335 (2012) 59-62 DOI: 10.1016/j.jcrysgro.2012.06.047
  16. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck M. Weyers M. Kneissl, Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy, J. Cryst. Growth. DOI: 10.1016/j.jcrysgro.2012.07.016
  17. T. Bruhn, L. Riele, B.-O. Fimland, N. Esser, P. Vogt, Optical investigations of the interface formation between organic molecules and semiconductor surfaces, Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012),  ISBN: 978-981-4417-11-2
  18. L. Riele, B. Buick, E. Speiser, B.-O. Fimland, P. Vogt, W. Richter, Epitaxial-like Growth of Lead Phthalocyanine Thin Layers on GaAs(001), Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012), ISBN: 978-981-4417-11-2
  19. R. Debusmann, V. Hoffmann, U. Brauch, M. Weyers, M. Kneissl, Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells, J. Appl. Phys. 112, 033110 (2012) DOI: 10.1063/1.4745025
  20. V. Kueller, A. Knauer, C. Reich, A. Mogilatenko, M. Weyers, J. Stellmach, T. Wernicke, M. Kneissl, Z. Yang, C. L. Chua, and N. M. Johnson, Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs, IEEE Photonics Tech. Letters (2012) DOI: 10.1109/LPT.2012.2210542
  21. C. Friedrich, A. Biermann, V. Hoffmann, M. Kneissl, N. Esser, P. Vogt, Preparation and atomic structure of reconstructed InGaN(0001) surfaces, J. Appl. Phys. 112, 033509 (2012)
  22. Abdul Kadir, Konrad Bellmann, Tino Simoneit, Markus Pristovsek, and Michael Kneissl, Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE, phys. stat. aol. (a), DOI 10.1002/pssa.201228238 (2012)
  23. G. Le Lay, P. De Padova, A. Resta, T. Bruhn and  P. Vogt,  Epitaxial silicene: can it be strongly strained?, Journal of Physics D 45, 392001 (2012).
  24. S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, M. Kneissl, Indium incorporation efficiency and critical layer thickness in (20-21) InGaN layers on GaN, Appl. Phys. Lett. 101, 202102 (2012).
  25. A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich, and M. Kneissl, AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates, phys. stat. sol. (a), DOI:10.1002/pssa.201200648 (2012).

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