Experimental Nanophysics and Photonics
The "Experimental Nanophysics and Photonics" research group is exploring a wide range of topics including investigations of the optical and electronic properties of group III-nitride materials and nanostructures as well as the development of novel optoelectronic devices. Our research is aimed at controlling the formation of nanostructures at the atomic level by metal-organic vapour phase epitaxy (MOVPE) in order to tailor the electronic properties of these new materials for applications in nanophotonic devices. We are particularly interested in the development of high-efficiency AlGaN and InAlGaN quantum well light emitting diodes (LEDs) and lasers in the ultraviolet spectral range, GaN-based vertical cavity surface emitting lasers (VCSELs) and semiconductor disk lasers (SCDL), longitudinally monomode InGaN laser diodes in the blue and green spectral, and GaN quantum dot (QD) based single photon emitters (SPE).
- Joint Lab "GaN Optoelectronics" 
- Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH) 
- SFB 787 "Halbleiter-Nanophotonik" 
- BMBF "Advanced UV for Life" 
- UVPhotonics NT GmbH