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Dipl.-Phys. Christopher Prohl

Lupe

Dipl.-Phys. Christopher Prohl
TU Berlin - AG Dähne
Institut für Festkörperphysik
EW 4-1, Room 406
Hardenbergstr. 36
10623 Berlin

e-mail:
phone: 0049-(0)30-314-22055
fax: 0049-(0)30-314-26181

Research interests

Preparation of semiconductor surfaces and nanostructures applying molecular beam epitaxy (MBE) and investigation of their structural properties using scanning tunneling microscopy (STM). Furthermore, cross-sectional scanning tunneling microscopy (XSTM) is used to investigate buried nanostructures. Currently the InAs/GaAs and the InGaAs/GaP systems are in focus.

Curriculum vitae

Education
since 06/2009
Ph.D. student in physics, AG Dähne, TU Berlin
 04/2009
 Diplom in physics, TU Berlin
 10/2005
 Vordiplom in physics, TU Berlin
 10/2003-04/2009
 studies in physics, TU Berlin

Teaching

 
 
WS 15/16
experimental physics V - solid state physics
SS 15
seminar: atomic structure of semiconductor nanostructures
WS 14/15
experimental physics V - solid state physics
WS 13/14
experimental physics V - solid state physics
SS 13
seminar: surfaces and nanostructures
WS 12/13
experimental physics V - solid state physics
SS 12
seminar: nanophotonics - basics and applications
WS 11/12
experimental physics V - solid state physics
WS 11/12
advanced training in instrumental analytics
course C - atomic structure of surfaces and thin films: scanning tunneling microscopy and electron diffraction
SS 11
seminar: semiconductor physics - basics, experimental techniques, applications
WS 10/11
advanced training in instrumental analytics
course C - atomic structure of surfaces and thin films: scanning tunneling microscopy and electron diffraction
WS 10/11
experimental physics V - solid state physics
WS 09/10
advanced training in instrumental analytics
course D - atomic structure of surfaces and thin films: scanning tunneling microscopy and electron diffraction
WS 07/08 – WS 08/09
physics laboratory course

Publications

  • Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001), C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, and A. Lenz, Journal of Vacuum Science & Technology A 34, 031102 (2016).
  • Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate, C.S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S.J. Maddox, S.D. March, S.R. Bank, M.L. Lee and A. Lenz, Applied Physics Letters 108, 143101 (2016).
  • Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy, D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reitzenstein, D. Bimberg, M. Lehmann, and M. Weyland, Physical Review B 91, 235418 (2015).
  • Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale, C. Prohl, A. Lenz, D. Roy, J. Schuppang, G. Stracke, A. Strittmatter, U. W. Pohl, D. Bimberg, H. Eisele, and M. Dähne, Applied Physics Letters 102, 123102 (2013).
  • Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer, G. Stracke, A. Glacki, T. Nowozin, L. Bonato, S. Rodt, C. Prohl, A. Lenz, H. Eisele, A. Schliwa, A. Strittmatter, U. W. Pohl, and D. Bimberg, Applied Physics Letters 101, 223110 (2012).
  • Electronic properties of dysprosium silicide nanowires on Si(557), M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, C. Prohl, B. Höpfner, P. Stojanov, E. Huwald, J. D. Riley, and M. Dähne, Journal of Applied Physics 108, 064304 (2010).
  • Atomic structure and strain of the InAs wetting layer growing on GaAs(001)-c(4×4), C. Prohl, B. Höpfner, J. Grabowski, M. Dähne, and H. Eisele, Journal of Vacuum Science & Technology B 28, C5E13 (2010).
  • Atomic structure of the (4×3) reconstructed InGaAs monolayer on GaAs(001), H. Eisele, B. Höpfner, C. Prohl, J. Grabowski, and M. Dähne, Surface Science 604, 283-289 (2010).
  • Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale, J. Grabowski, C. Prohl, B. Höpfner, M. Dähne, and H. Eisele, Applied Physics Letters 95, 233118 (2009).  
  • Energy surfaces of rare-earth silicide films on Si(111), M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, B. Höpfner, C. Prohl, I. Engelhardt, P. Stojanov, E. Huwald, J.D. Riley, and M. Dähne, Surface Science 603, 2808-2814 (2009). 
  • Strukturelle Eigenschaften von Submonolagen-Bedeckungen im InAs/GaAs-Quantenpunktsystem, Diplomarbeit, Christopher Prohl, Institut für Festkörperphysik, Technische Universität Berlin, März 2009.

Conferences

2015

  • Spring meeting of the German Physical Society, Berlin, March 15-20 2015, Cross-sectional Scanning Tunneling Microscopy Analysis of InGaAs/GaP Quantum Dots (oral).

2013

  • EMN Fall Meeting - Energy Materials Nanotechnology, Orlando/USA, December 7-10 2013, Structural analysis of MOVPE grown InGaAs quantum dots in a GaP matrix (invited).
  • 4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2013), Lake Arrowhead/USA, September 29 - October 4 2013, Structural characterization of In0.25Ga0.75As/GaAs quantum dots in a GaP matrix using cross-sectional scanning tunneling microscopy (oral).
  • 55th Electronic Materials Conference (EMC 2013), South Bend/USA, June 26-28 2013, Atomic Structure of In0.25Ga0.75As/GaAs Quantum Dots in a GaP(001) Matrix (oral).

 2012

  • 39th International Symposium on Compound Semiconductors (ISCS, CSWeek 2012), Santa Barbara/USA, August 26-30 2012, Cross-sectional scanning tunneling microscopy on InGaAs/GaAs quantum dots in a GaP matrix (oral).
  • Spring meeting of the German Physical Society, Berlin, March 26-30 2012, Structural characterization of InAs and In0.25Ga0.75As/GaAs nanostructures grown on GaP(001) (poster).

2011

  • 28th European Conference on Surface Science (ECOSS 28), Wroclaw(Poland), August 28 - September 2 2011, Surface Transformation during InAs Wetting Layer Growth on GaAs(001)-c(4×4) (poster).
  • Spring meeting of the German Physical Society, Dresden (Germany), March 14-18 2011, Strain aspects of the atomic structure of the InAs wetting layer grown on GaAs(001)-c(4×4) (oral).

2010

  • 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin (Germany), August 22-27 2010, Atomic Structure of the InAs Wetting Layer Grown on GaAs(001)-c(4×4) (oral).

2009

  • Spring meeting of the German Physical Society, Dresden (Germany), March 23-27 2009, Structural properties of sub-monolayer InAs-coverages on GaAs(001) (oral).

Zusatzinformationen / Extras

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