Prof. Dr. Holger Eisele
TU Berlin - AG Dähne
Institut für Festkörperphysik
EW 4-1, Room 416
Hardenbergstr. 36
10623 Berlin

e-mail: ak@physik.tu-berlin.de
phone: 0049-(0)30-314-22058
fax: 0049-(0)30-314-26181

web: https://www.ifkp.tu-berlin.de/menue/arbeitsgruppen/ageisele/

• structural and electronic properties of semiconductor surfaces and interfaces
• growth-related structure formation of semiconductor nano-structures for opto-electronic devices
• formation of semiconductor surface reconstructions
• intermixing decomposition, and ordering in ternary and quaternary compound semiconductors
• segregation and diffusion as counteraction effects in nanostructure interface formation
• tunneling mechanisms and image contrast contributions in scanning tunneling microscopy
• strain analysis in semiconductor nanostructures
• atom resolved imaging for educational purposes
  

• Scanning tunneling microscopy (STM)
  
• Scanning tunneling spectroscopy (STS)
  
• Cross-sectional scanning tunneling microscopy (XSTM)
  
• Strain calculation based on continuum mechanical and atomistic elasticity theory (CM/VFF)
  
• Low-energy electron diffraction (LEED)
  
• Auger electron spectroscopy (AES)
  

• GaAsN
• InGaAsN
• GaN
• InN
• InAs/GaAs
• InGaAs/GaAs
• InGaAsSb/GaAs
• InAsN/GaAs
• InAs/GaAsN
• GaSb/GaAs
• InAs/InGaAsP/InP
• GaAs/AlGaAs
• DySi/Si
• Cs/Pb/Si
  

3 monographies and book chapters
46 publications in refereed journals
10 refereed conference publications
22 invited talks at international conferences, workshops, and symposia
25 invited talks at universities, scientific institutes, and companies
125 refereed contributions to international conferences and workshops
14 h-factor

• Member of the program committee of the 3^rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures: SemiconNano 2011,
  Traunkirchen, 11^th-16^th Sept. 2011, Austria
• Co-Chair of the shared Symposium "Semiconductor Nanophotonics:
  Characterization on the Atomic Scale" between Sections Thin Layers,
  Surfaces, and Semiconductors at the Spring Meeting 2012 of the German
  Physical Society (DPG),
  Berlin, 25^th-30^th March 2012, Germany 
• Member of the program committee of the 39^th International Symposium on Compound Semiconductors: ISCS 2012, part of the Compound Semiconductor Week 2012 (CSW 2012)
  Program chair of the section: Physics, Simulation, and Characterization,
  Santa Barbara, 22^nd-25^th Aug. 2012, USA
• Member of the program committee of the 40^th International Symposium on
  Compound Semiconductors: ISCS 2013, part of the Compound Semiconductor Week 2013 (CSW 2013)
  Kobe, Summer 2013, Japan
• Co-Chair and member of the program committee of the 4^th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures: SemiconNano 2013,
  California, Summer/Fall 2013, USA