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GaN surfaces

The atomic structure and electronic properties of the non-polar GaN(1-100) cleavage surface was studied using XSTM. GaN is the base material for the development of novel high-efficiency light emitters.
In our experiments we found that the surface is unreconstructed, and that there are no intrinsic surface states within the band gap [1]. Furthermore we found different dislocation types and could derive their burgers vectors, line directions, and charge states [2]. In addition, we could observe a modulation of the doping concentration during growth in [0001] direction [3].



Lupe

(a,b) XSTM, (c) LEED, and (d) XSTS results on the GaN(1-100) surface [1].



Lupe

(a) XSTM image of a perfect screw dislocation crossing the GaN(1-100) surface [2] and (b) XSTM contrast variation due to a Si doping modulation [3].



[1] Surface states and origin of the Fermi level pinning on nonpolar GaN(1-100) surfaces, L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert, Applied Physics Letters 93, 192110 (2008).
[2] Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy, Ph. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, and M. Dähne, Applied Physics Letters 94, 062104 (2009).
[3] Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy, H. Eisele, L. Ivanova, S. Borisova, M. Dähne, M. Winkelnkemper, and Ph. Ebert, Applied Physics Letters 94, 162110 (2009).

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