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Coherence properties of high-beta elliptical semiconductor micropillar lasers
Citation key 2007_04_Ates
Author Ates, S. and Ulrich, S. M. and Michler, P. and Reitzenstein, S. and Loffler, A. and Forchel, A.
Pages 161111
Year 2007
DOI 10.1063/1.2724908
Journal Applied Physics Letters
Volume 90
Number 16
Month apr
Publisher Amer Inst Physics
Abstract The authors report complementary investigations on the coherence properties of spontaneous and stimulated emission from (In,Ga)As/GaAs quantum-dot-based high-quality semiconductor micropillar cavities. Low temperature microphotoluminescence measurements on an elliptically shaped micropillar revealed a clear polarization splitting (Delta E similar to 45 mu eV) of its fundamental mode. Full conformity is found with an oscillatory behavior observed in corresponding g((1))(tau) first-order field correlation measurements. In addition, power-dependent g((1))(tau) series on a single polarization component of the lasing mode have systematically revealed a strong coherence time increase from tau(c)similar to 25 to similar to 430 ps, which traces the change of emission characteristics from thermal to coherent light. (c) 2007 American Institute of Physics.
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