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TU Berlin

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Publikationen

2002

Coherent and ballistic switching effects in GaAs/AlGaAs nanojunctions

Worschech, L., Reitzenstein, S., Kesselring, M., Schliemann, A. and Forchel, A.

Physica E-low-dimensional Systems & Nanostructures 12, 688–690 (2002).

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Switching characteristics and demonstration of logic functions in modulation doped GaAs/AlGaAs nanoelectronic devices

Reitzenstein, S., Worschech, L., Kesselring, M. and Forchel, A.

Physica E-low-dimensional Systems & Nanostructures 13, 954–956 (2002).

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Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states

Fiori, G., Iannaccone, G., Macucci, M., Reitzenstein, S., Kaiser, S., Kesselring, M., Worschech, L. and Forchel, A.

Nanotechnology 13, 299–303 (2002).

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Logic AND/NAND gates based on three-terminal ballistic junctions

Reitzenstein, S., Worschech, L., Hartmann, P. and Forchel, A.

Electronics Letters 38, 951–953 (2002).

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Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots

Schliemann, A., Worschech, L., Reitzenstein, S., Kaiser, S. and Forchel, A.

Applied Physics Letters 81, 2115–2117 (2002).

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2001

1D-0D-1D transitions in GaAs/AlGaAs electron waveguides coupled by a semiconducting island

Worschech, L., Reitzenstein, S. and Forchel, A.

Physica Status Solidi B-basic Research 224, 863–865 (2001).

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Investigation of switching effects between the drains of an electron Y-branch switch

Worschech, L., Weidner, B., Reitzenstein, S. and Forchel, A.

Applied Physics Letters 78, 3325–3327 (2001).

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2000

Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures

Worschech, L., Reitzenstein, S. and Forchel, A.

Applied Physics Letters 77, 3662–3664 (2000).

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