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Publikationen

2005

Compact logic NAND-Gate based on a single in-plane quantum-wire transistor

Reitzenstein, S., Worschech, L., Muller, C. R. and Forchel, A.

Ieee Electron Device Letters 26, 142–144 (2005).

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2004

Strong coupling in a single quantum dot-semiconductor microcavity system

Reithmaier, J. P., Sek, G., Loffler, A., Hofmann, C., Kuhn, S., Reitzenstein, S., Keldysh, L. V., Kulakovskii, V. D., Reinecke, T. L. and Forchel, A.

Nature 432, 197–200 (2004).

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Drain voltage induced barrier increasing of quantum-wire transistors

Reitzenstein, S., Worschech, L., Hartmann, D. and Forchel, A.

Electronics Letters 40, 75–77 (2004).

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Room temperature operation of an in-plane half-adder based on ballistic Y-junctions

Reitzenstein, S., Worschech, L. and Forchel, A.

Ieee Electron Device Letters 25, 462–464 (2004).

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2003

Self-switching of branched multiterminal junctions: a ballistic half-adder

Worschech, L., Reitzenstein, S., Hartmann, P., Kaiser, S., Kamp, M. and Forchel, A.

Applied Physics Letters 83, 2462–2464 (2003).

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Pronounced switching bistability in a feedback coupled nanoelectronic Y-branch switch

Reitzenstein, S., Worschech, L., Hartmann, P. and Forchel, A.

Applied Physics Letters 82, 1980–1982 (2003).

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A novel half-adder circuit based on nanometric ballistic Y-branched junctions

Reitzenstein, S., Worschech, L. and Forchel, A.

Ieee Electron Device Letters 24, 625–627 (2003).

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2002

Capacitive-coupling-enhanced switching gain in an electron Y-branch switch

Reitzenstein, S., Worschech, L., Hartmann, P., Kamp, M. and Forchel, A.

Physical Review Letters 89, 226804 (2002).

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Microwave rectification in ballistic nanojunctions at room temperature

Worschech, L., Schliemann, A., Reitzenstein, S., Hartmann, P. and Forchel, A.

Microelectronic Engineering 63, 217–221 (2002).

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Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots

Schliemann, A., Worschech, L., Reitzenstein, S., Kaiser, S. and Forchel, A.

Applied Physics Letters 81, 2115–2117 (2002).

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Coherent and ballistic switching effects in GaAs/AlGaAs nanojunctions

Worschech, L., Reitzenstein, S., Kesselring, M., Schliemann, A. and Forchel, A.

Physica E-low-dimensional Systems & Nanostructures 12, 688–690 (2002).

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Switching characteristics and demonstration of logic functions in modulation doped GaAs/AlGaAs nanoelectronic devices

Reitzenstein, S., Worschech, L., Kesselring, M. and Forchel, A.

Physica E-low-dimensional Systems & Nanostructures 13, 954–956 (2002).

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Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states

Fiori, G., Iannaccone, G., Macucci, M., Reitzenstein, S., Kaiser, S., Kesselring, M., Worschech, L. and Forchel, A.

Nanotechnology 13, 299–303 (2002).

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Logic AND/NAND gates based on three-terminal ballistic junctions

Reitzenstein, S., Worschech, L., Hartmann, P. and Forchel, A.

Electronics Letters 38, 951–953 (2002).

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2001

1D-0D-1D transitions in GaAs/AlGaAs electron waveguides coupled by a semiconducting island

Worschech, L., Reitzenstein, S. and Forchel, A.

Physica Status Solidi B-basic Research 224, 863–865 (2001).

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Investigation of switching effects between the drains of an electron Y-branch switch

Worschech, L., Weidner, B., Reitzenstein, S. and Forchel, A.

Applied Physics Letters 78, 3325–3327 (2001).

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2000

Negative differential conductance in planar one-dimensional/zero-dimensional/one-dimensional GaAs/AlGaAs structures

Worschech, L., Reitzenstein, S. and Forchel, A.

Applied Physics Letters 77, 3662–3664 (2000).

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