Publikationen 2014 - 2016

On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates
Alden Dorian; Bryan Zachary;Gaddy Benjamin;Bryan Isaac;Callsen Gordon;Koukitu Akinori;Kumagai Yoshinao;Hoffmann Axel;Irving Doug;Sitar Slatko;Collazo Ramon
ECS Transactions, The Electrochemical Society, 72 (2016), Nr. 5, S.31-40
paper [1]

Intrinsic Electronic Properties of high-quality Wurtzite InN
Eisele Holger; Schuppang J.;Schnedler M.;Duchamp M.;Nenstiel C.;Portz V.;Kure T.;Bügler M.;Lenz A.;Dähne M.;Hoffmann A.;Gwo S.;Choi S.;Speck J.S.;Dunin-Borkowski R.E.;Ebert Ph.
Physical Review B, American Physical Society, 94 (2016), S.245201-1-245201-5
paper [2]

Unintentional Indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
Freytag Christian; Feneberg Martin;Berger Christoph;Bläsing Jürgen;Dadgar Armin;Callsen Gordon;Nippert Felix;Hoffmann Axel;Bokov Pavel Yu;Goldhahn Rüdiger
Journal of Applied Physics, American Institute of Physics, 120 (2016), Nr. 1, S.015703-1-015703-7

Raman and photoluminescence properties of ZnO nanowires grown by a catalyst-free vapor-transport process using ZnO nanoparticle seeds
Güell Frank; Martínez-Alanis Paulina Raquel;Khachadorian Sevak;Rubio-García Javier;Franke Alexander;Hoffmann Axel;Santana Guillermo 
Physica Status Solidi (b), Wiley-VCH, 253 (2016), Nr. 5, S.883-888
paper [3]

Spatially controlled growth of highly crystalline ZnO nanowires by an inkjet-printing catalyst-free method
Güell Frank; Martínez-Alanis Paulina R.;Khachadorian Sevak;Zamani Reza R.;Franke Alexander;Hoffmann Axel;Wagner Markus R.;Santana Guillermo
Materials Research Express, IOP Publishing, 3 (2016), Nr. 2, S.025010-025010-5

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
Kaess Felix; Mita Seiji;Xie Jingqiao;Reddy Pramod;Klump Andrew;Hernandez-Balderrama Luis H.;Washiyama Shun;Franke Alexander;Kirste Ronny;Hoffmann Axel;Collazo Ramon;Sitar Zlatko
Journal of Applied Physics, American Institute of Physics, 120 (2016), Nr. 10, S.105701-1-105701-7
paper [4]

The effect of illumination power density on carbon defect configuration in silicon doped GaN
Kaess Felix; Reddy Pramod;Alden Dorian;Klump Andrew;Hernandez-Balderrama Luis H.;Franke Alexander;Kirste Ronny;Hoffmann Axel;Collazo Ramon;Sitar Zlatko
ournal of Applied Physics, American Institute of Physics, 120 (2016), Nr. 23, S.235705-1-235705-5
paper [5]

Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires
Khachadorian Sevak; Gillen Roland;Ton-That Cuong;Zhu Liangchen;Maultzsch Janina;Phillips Matthew R.;Hoffmann Axel
Physica Status Solidi Rapid Research Letters, Wiley-VCH, 10 (2016), Nr. 4, S.334-338
paper [6]

Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy
Mohajerani M.S.; Khachadorian Sevak;Schimpke T.;Nenstiel C.;Hartmann J.;Ledig J.;Avramescu A.;Strassburg M.;Hoffmann A.;Waag A.
Applied Physics Letters, American Institute of Physics, 108 (2016), Nr. 9, S.091112-1-091112-5

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
Nippert Felix; Yu Karpov Sergey;Callsen Gordon;Galler Bastian;Kure Thomas;Nenstiel Christian;Wagner Markus R.;Straßburg Martin;Lugauer Hans-Jürgen;Hoffmann Axel
Applied Physics Letters, American Institute of Physics, 109 (2016), Nr. 16, S.161103-1-161103-5
paper [7]

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
Nippert Felix; Nirschl Ana;Schulz Tobias;Callsen Gordon;Pietzonka Ines;Westerkamp Steffen;Kure Thomas;Nenstiel Christian;Strassburg Martin;Albrecht Martin;Hoffmann Axel
Journal of Applied Physics, American Institute of Physics, 119 (2016), Nr. 21, S.215707-1-215707-6

Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Nippert Felix; Karpov Sergey;Pietzonka Ines;Galler Bastian;Wilm Alexander;Kure Thomas;Nenstiel Christian;Callsen Gordon;Straßburg Martin;Lugauer Hans-Jürgen;Hoffmann Axel
Japanese Journal of Applied Physics, IOP Publishing, 55 (2016), Nr. 5S, S.05FJ01-1-05FJ01-5

Photoluminescence excitation spectroscopy of excited states of an asymmetric cubic GaN/Al0. 25Ga0. 75N double quantum well grown by molecular beam epitaxy
Wecker Tobias; Callsen Gordon;Hoffmann Axel;Reuter Dirk;As Donat J.
Japanese Journal of Applied Physics, IOP Publishing, 55 (2016), Nr. 5S, S.05FG01-1-05FG01-4
paper [8]

Chemical, vibrational and optical signatures of nitrogen in ZnO nanowires
Zhu L.; Khachadorian S.;Hoffmann A.;Phillips M.R.;Ton-That C.
Materials Science in Semiconductor Processing, Elsevier (2016), S.1-5
paper [9]

Estimation of free carrier concentrations in high-quality heavily doped GaN: Si micro-rods by photoluminescence and Raman spectroscopy
Mohajerani M.S.; Khachadorian S.;Nenstiel C.;Schimpke T.;Avramescu A.;Strassburg M.;Hoffmann A.;Waag A.
In: Heonsu Jeon; Li-Wei Tu; Michael R. Krames; Martin Strassburg (Hrsg.) Nanomaterials and Nanostructures for LEDs I. 9768. Washington: SPIE, 2016, S. 976803-1-976803-7
paper [10]


Quantum Dot Lattice as Nano-Antenna for Collective Spontaneous Emission
Mokhlespour S.; Haverkort J.E.M.;Slepyan G.Y.;Maksimenko Sergey A.;Hoffmann Axel
In: Antonio Maffuccio, Sergey A. Maksimenko (Hrsg.) Fundamental and Applied Nano-Electromagnetics. Dordrecht: Springer, 2016, S. 69-88
paper [11]


Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD
Seidlitz Daniel; Senevirathna M.K.I.;Abate Y.;Hoffmann A.;Dietz N.
In: Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang (Hrsg.) Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems. 9571. San Diego: SPIE, 2016, S. 95710P-95710P-10
paper [12]


Thresholdless Lasing of Nitride Nanobeam Cavities
Jagsch Stefan T.; Vico Triviño Noelia;Callsen Gordon;Kalinowski Stefan;Rousseau Ian M.;Carlin Jean-Francois;Hoffmann Axel;Grandjean Nicolas;Butté Raphael;Stephan Reitzenstein
Cornell University, 2016
paper [13]

Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods
Suranan Anantachaisilp, Siwaporn Meejoo Smith, Cuong Ton-That, Soraya Pornsuwan, Anthony R. Moon, Christian Nenstiel, Axel Hoffmann, Matthew R. Philips Matthew
Journal of Luminescence 168 (2015), 20-25
paper [14]


Desorption induced GaN quantum dots on (0001) AlN by MOVPE
Konrad, Bellmann, Farsane Tabataba-Vakili, Tim Wernicke, André Strittmatter, Gordon Callsen, Axel Hoffmann, Axel, Michael Kneissl
physica status solidi rrl 9 (9) (2015) 526-529
paper [15]


Identifying multi-excitons in quantum dots: the subtle connection between electric dipole moments and emission linewidths
Callsen Gordon; Pahn Gerald M.O.
Physica Status Solidi Rapid Research letters 9 (9) (2015) 521-525
paper [16]

Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots
Callsen Gordon; Pahn Gerald M.O.;Kalinowski Stefan;Kindel C.;Settke J.;Brunnmeier J.;Nenstiel C.;Kure T.;Nippert F.;Schliwa A.;Hoffmann A.;Markurt T.;Schulz T;Albrecht M.;Kako S.;Arita M.;Arakawa Y.
Physical Review B, American Physical Society, 92 (2015), Nr. 23, S.235439-1-235439-14
paper [17]

Effects of annealing on optical and structural properties of zinc oxide nanocrystals
Khachadorian Sevak; Gillen Roland;Choi Sumin;Cuong Ton-That;André Kliem;Maultzsch Janina;Phillips Matthew R.;Hoffmann Axel
Physica Status Solidi (b) 252 (2015), Nr. 11, S.2620-2625
paper [18]

Germanium-the superior dopant in n-type GaN
Nenstiel Christian; Bügler Max;Callsen Gordon;Nippert Felix;Kure Thomas;Fritze S.;Dadgar A.;Witte H.;Blaesing J.;Krost A.;Hoffmann A.
Physica status solidi - Rapid Research Letters, Wiley, 9 (2015), Nr. 12, S.716-721
paper [19]


Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing
Ton-That C.; Zhu L.;Lockrey M.N.;Phillips M.R.;Tadich A.;Thomsen L.;Khachadorian S.;Schlichting S.;Jankowski N.;Hoffmann A.
Physical Review B, American Physical Society, 92 (2015), S.24103-1-24103-7
paper [20]

Spatial Mapping of Exciton Lifetimes in Single ZnO Nanowires
Güell F.; Reparaz J.S.;Wagner M.R.;Callsen G.;Hoffmann A.;Morante J.R.
Chem. Mater. 2009, 21, 3889–3897 3889
The European Conference on Lasers and Electro-Optics. München: OSA Publishing, 2015, S. 1-6
paper [21]


Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces
Ledentsov N.N.; Shchukin V.A.;Lyytikäinen J.;Okhotnikov O.;Cherkashin N.A.;Shernyakov Yu M.;Payusov A.S.;Gordeev N.Y.;Maximov M.V.;Schlichting S.;Nippert F.;Hoffmann A.
In: Steubel, Jeon, Tu, Strassburg (Hrsg.) Proceedings of the SPIE. 9383. San Francisco: SPIE, 2015, S. 93830-1-93830-12

Bound and free excitons in ZnO. Optical selection rules in the absence
and presence of time reversal symmetry
M.R.Wagner ^a, H.W. Kunert ^b, A.G.J. Machatine ^b, A. Hoffmann ^a, P. Niyongabo ^b, J. Malherbe ^b, J. Barnas ^c
a Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
^b Department of Physics, University of Pretoria, 0002, South Africa
^c Department of Physics, Adam Mickiewicz University, ul. Ulmutowska 85, 61-614 Poznan, Poland
Microelectronics Journal 40 (2009) 289–292
paper [22]

Shallow carrier traps in hydrothermal ZnO crystals
C. Ton-That, LLC Lem, MR Phillips, F. Reisdorffer, J. Mevellec, T.P. Nguyen, C. Nenstiel, A. Hoffmann
New Journal of Physics 16 (2014) 083040
paper [23]

Recombination dynamics in InxGa1-xN quantum wells-Contribution of excited subband recombination to carrier leakage
T. Schulz, A. Nirschl, P. Drechsel, F. Nippert, T. Markurt, M. Albrecht, A. Hoffmann
Appl. Phys. Lett. 105 (18) (2014), 181109
paper [24]

Li-doped ZnO nanorods with single-crystal quality–non-classical crystallization and self-assembly into mesoporous materials
C. Lizandara-Pueyo, S. Dilger, M.R. Wagner, M. Gerigk, A. Hoffmann, S. Polarz
CrystEngComm 16 (8) (2014) 1525-1531
paper


Green (In, Ga, Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces
N. N. Ledentsov, V. A. Shchukin, J. Lyytikäinen, O. Okhotnikov, N. A. Cherkashin, Yu. M. Shernyakov, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, S. Schlichting, F. Nippert, and A. Hoffmann
Applied Physics Letters 104 (18) (2014), 181902
paper [25]

Properties of AlN based lateral polarity structures
R. Kirste, M.P. Hoffmann, L. Hussey, Wei Guo, J. Tweedie, M. Gerhold, A. Hoffmann, R. Collazo, Z. Sitar
Phys. Stat. Sol. 11 (2) (2014), 261-264
paper [26]

Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built-in dipole moments
C. Kindel, G. Callsen, S. Kako, T. Kawano, H. Oishi, G. Hönig, A. Schliwa, A. Hoffmann, Y. Arakawa
Phys. Stat. Sol. rrl 8 (5) (2014), 408-413
paper [27]

Manifestation of unconventional biexciton states in quantum dots
G. Hönig, G. Callsen, A. Schliwa, S. Kalinowski, C. Kindel, S. Kako, Y. Arakawa, D. Bimberg und A. Hoffmann
Nature Comm., 5 (2014) 5721; doi:10.1038/ncomms6721
paper
[28]
Dependence on pressure of the refractive indices of wurtzite ZnO, GaN and AlN
A. R. Goni, F. Käß, J. S. Reparaz, M. I. Alonso, M. Garriga, G. Callsen, M. R. Wagner, A. Hoffmann, and Z. Sitar
Physical Review B 90, 045208 (2014)
paper [29]

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements
G. Callsen, Markus R. Wagner, Sebastian Reparaz, Z. Sitar
Physical Rev. B 90 (2014) 1610-1634
paper [30]

Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks
M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, D. J. As
phys. stat. sol (c) 11, (2014), 790
paper [31]