Publikationen 2007 - 2005

Phonons and electronic states of ZnO, Al₂O₃ and Ge
in the presence of time reversal symmetry
A G J Machatine¹, H W Kunert¹, A Hoffmann², J B Malherbe¹, J
Barnas³, R Seguin², M R Wagner², P Niyongabo¹ and N Nephale^1
1Department of Physics, University of Pretoria, 0002 Pretoria, South Africa
²Institut f¨ur Festk¨orperphysik, Technische Universit¨at Berlin, Hardenbergerstr. 6 10-623Berlin, Germany
³Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznan,Poland
Journal of Physics: Conference Series 92 (2007) 012071
paper [1]

Lifetime distribution of localized excitons in InGaN quantum dots
M. Winkelnkemper, M. Dworzak, T. Stempel Pereiraz, T. Bartel, L.
Reißmann, A. Schliwa, A. Strittmatter, A. Homann, and D. Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany
paper [2]

Optical Properties of III-V Quantum Dots
Udo W. Pohl, Sven Rodt, and Axel Hoffmann
Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstrasse 36,
10623 Berlin, Germany
paper [3]

Surface modification of Co-doped ZnO nanocrystals and its effects on the magnetic properties
A. S. Pereira
Departamento de Química and CICECO, Universidade de Aveiro, P-3810-193 Aveiro, Portugal
A. O. Ankiewicza
I3 N-Institute for Nanostructures, Nanomodelling and Nanomanufacturing and Departamento de Física,
Universidade de Aveiro, P-3810-193 Aveiro, Portugal and Institut für Experimentelle Physik II,
Universität Leipzig, D-04103 Leipzig, Germany
W. Gehlhoff and A. Hoffmann
Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany
S. Pereira and T. Trindade
CICECO, Universidade de Aveiro, P-3810-193 Aveiro, Portugal
M. Grundmann
Institut für Experimentelle Physik II, Universität Leipzig, D-04103 Leipzig, Germany
M. C. Carmo and N. A. Sobolev
I3 N-Institute for Nanostructures, Nanomodelling and Nanomanufacturing and Departamento de Física,
Universidade de Aveiro, P-3810-193 Aveiro, Portugal
Journal of Applied Physics 103, 07D140 2008
paper [4]

Microscopic theory of quantum dot interactions with quantum light: local field effect
G.Ya. Slepyan, A. Magyarov, and S.A. Maksimenko
Institute for Nuclear Problems, Belarus State University, Bobruiskaya 11, 220050 Minsk, Belarus
A. Hoffmann
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
paper [5]

Ionized and neutral donor bound excitons in ZnO
B.K. Meyer¹, J. Sann¹, S. Lautenschläger¹, M. R. Wagner², and A. Hoffmann^2
1I. Physics Institute, Justus Liebig University, 35592 Giessen, Heinrich-Buff-Ring 16, Germany
²Institute of Solid State Physics, TU Berlin, 10623 Berlin, Hardenbergstr. 36, Germany
paper [6]

Zn interstitial related donors in ammonia-treated ZnO powders
J. Sann, J. Stehr, A. Hofstaetter, and D. M. Hofmann*
I. Physikalisches Institut, Justus-Liebig-Universität-Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
A. Neumann and M. Lerch
Institut für Chemie, Technische Universität Berlin, Straße des 17, Juni 135, 10623 Berlin, Germany
U. Haboeck, A. Hoffmann, and C. Thomsen
Institut für Festkörperphysik, Technische Universität Berlin, Hardenberg Strasse 36, 10623 Berlin, Germany
Physical Review B 76, 195203 (2007)
paper [7]

Effects of time reversal symmetry on phonons in
sapphire substrate for ZnO and GaN
H.W. Kunerta,^b, A. Hoffmann^a, A.G.J. Machatine^b, J. Malherbe^b,
J. Barnas^c, G. Kaczmarczyk^a, U. Haboeck^a, R. Seguin^a
a Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10 623 Berlin, Germany
b Department of Physics, University of Pretoria, Pretoria 0002, South Africa
^c Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznan, Poland
0749-6036/$ - see front matter
c 2007 Published by Elsevier Ltd
doi:10.1016/j.spmi.2007.04.079
paper [8]

Rabi oscillations a quantum dot exposed to quantum light
A. Magyarov ^a, G.Ya. Slepyan ^a, S.A. Maksimenko ^a, A. Hoffmann ^b
a Institute for Nuclear Problems, Belarus State University, Bobruiskaya 11, 220050 Minsk, Belarus
^b Institut Fuer Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Materials Science and Engineering C 27 (2007) 1030–1033
paper [9]

Phonons in sapphire Al₂O₃ substrate for ZnO and GaN
H.W. Kunert ^a, A.G.J. Machatine ^b, A. Hoffmann ^a, G. Kaczmarczyk ^a, U. Haboeck ^a, J. Malherbe ^b, J. Barnas ^c, M.R. Wagner ^a, J.D. Brink ^b
a Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 6, 10-623 Berlin, Germany
^b Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
^c Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznan, Poland
Materials Science and Engineering C 27 (2007) 1222–1226
paper [10]

Solid state and materials research news
A. Hoffmann, Tech. Univ. Berlin, and
B. K. Meyer, Univ. Gießen
phys. stat. sol. (RRL) 1, No. 3, A40–A41 (2007) / DOI 10.1002/pssr.200750016
paper [11]

Resonant Raman scattering at exciton intermediate states in ZnO
M. R. Wagner, P. Zimmer, A. Hoffmann, C. Thomsen
phys. stat. sol. (RRL) 1, 169– 171 (2007) / DOI 10.1002/pssr. 200701106
paper [12]

Fabry-Perot effects in InGaN/GaN heterostructures on Si substrates
C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, A. Krost
J. Appl. Phys. 101, 033113 (2007)
paper [13]

Structure-property-function relationships in nanoscaled oxide sensors: A case study based on zinc oxide.
S. Polarz, A. Roy, M. Lehmann, M. Driess, F. E. Kruis, A. Hoffmann,  P. Zimmer
Advance Functional Materials 000, (2007)
paper [14]

Photonic properties of ZnO epilayers
M.R. Wagner, U. Haboeck, P. Zimmer, A. Hoffmann, S. Lautenschläger, C. Neumann, J. Sann, B.K. Meyer
Proc. SPIE 6474, 64740x (2007)
paper [15]

Gain mechanisms in field-free InGaN layers grown on sapphire and bulk GaN substrate
M. Dworzak, T. Stempel Pereira, M. Bügler, A. Hoffmann, G. Franssen, S. Grzanka, T. Suski,R. Czernecki, M. Leszczynski, I. Grzegory
phys. stat. sol. (RRL) 1, 141– 143 (2007) / DOI 10.1002/pssr.200701037
paper [16]

On the Origin of the Unexpected Annealing Behavior of GaInNAs Quantum Wells
M. Dworzak, R. Hildebrant, A. Hoffmann, L. Geelhaar, M. Galluppi, H. Riechert, T. Remmle, M. Albrecht
Jap. J. Appl. Phys. 46 (2007), L 614
paper [17]

Properties of InN layers grown by high pressure chemical vapour deposition
M. Alevli, G. Durkaya, R. Kirste, A. Weesekara, W. E. Fenwick, V. T. Woods, I.T. Ferguson, A. Hoffmann, A.G. Perera and N. Dietz
Mat. Res. Soc. Symp. Proc. 955; Symposium I: Advances in III-V Nitride Semiconductor
Materials and Devices, Boston, MA, USA, Nov.-Dec. 2006, I8.4, pp. 1-6, (2007)
paper [18]

Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliewa, L. Reißmann, A. Strittmatter, A. Hoffmann, D. Bimberg
J. Appl. Phys. 101 (2007), 113708
paper [19]

Group I elements in ZnO
B.K. Meyer, N. Volbers, A. Zeuner, S. Lautenschläger, J. Sann, A. Hoffmann, U. Haboeck
Mat. Res. Soc. Symp. Proc. 891, 0891, 0891-EE 10-24.1 (2006)
paper [20]

Engineering of the radiative recombination rate in quantum dots coupled to the tilted waveguide mode
N.V. Kryzhanovskaya, P. Zimmer, N.N Ledentsov, A. Hoffmann, D. Bimberg, A.R. Kovsh, S.S. Mikhrin, V.A. Shchukin, L.Y. Karachinska, M.V.  Maximov
Semiconductor Science and Technology 21, 162 (2006)

ZnO based ternary transparent conductors
A. Polity, B.K. Meyer, T. Krämer, C. Wang, U. Haboeck, A. Hoffmann
phys. stat. sol (a) 203, 2867 (2006)
paper [21]

Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate
M. Dworzak, T. Stempel, A. Hoffmann, G. Franzen, S. Grzanka, T. Suski, R. Czernecki, M. Leszczynski, I. Grzegory
Mat. Res. Soc. Symp. Proc. 892, Warrendale,PA, USA, ISBN: 1-55899-846-2, 825 (2006)
paper [22]

Fe centers in GaN as candidates for spintronics applications
E. Malguth, A. Hoffmann, M. Phillips, W. Gehlhoff
Mat. Res. Soc. Symp. Proc. 892, (2006) Warrendale,PA, USA, 092-FF07-EE05-05.1
paper [23]

MOVPE growth of high-quality AlN
A. Dadgar, A. Krost, J. Christen, B. Bastek, F. Bertram, A. Krtschil, T. Hempel, J. Bläsing,    U. Haboeck, A. Hoffmann
J. Cryst. Growth 297, 306 (2006)
paper [24]

Properties of InN grown by High-Pressure VD
M. alevli, G. Durkaya, V. Woods, U. Haboeck, H. Kang, J. Senawiratne, M. Straßburg, I.T. Ferguson, A. Hoffmann, and N.Dietz
Mat. Res. Soc. Symp. Proc. 892, ISBN: 1-55899-846-2, FF6.2, pp. 1-6 (2006)
paper [25]

Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductors epilayers and devices
M. H. Kane, M. Strassburg, W. E. Fenwick, A. Asghar, J. Senawiratne, D. Azamat, Z. Hu, E. Malguth, S. Graham, U. Perera, W. Gehlhoff, A. Hoffmann, N. Dietz, C.J. Summers, I.T. Ferguson
phys.stat. sol. (c) 3, 2237, (2006)
paper [26]

Optical properties of InGaN/GaN quantum wells on saphire and bulk GaN substrates
M. Dworzak, T. Stempel, A. Hoffmann, G. Franzen, S. Grzanka, T. Suski, R. Czernecki, M. Leszczynski, I. Grzegory
phys.stat. sol. (c) 3, 2078, (2006)

Internal ⁵E → ⁵T₂ transition of Fe²⁺ in GaN
E. Malguth, A. Hoffmann, X. Xu
Phys. Rev. B 74, 165201 (2006)

Structural and electronic properties of Fe³⁺- and Fe²⁺- centers in GaN from optical and EPR experiments
E. Malguth, A. Hoffmann, W. Gehlhoff, O. Gelhausen, M.R. Phillips, X. Xu
Phys. Rev. B 74, 165202 (2006)
paper [27]

Optical and structural microanalysis of GaN grown on SiN submonolayers
T. Riemann, T. Hempel, J. Christen, P. Veit, R. Clos, A. Dadgar, A. Krost,
U. Haboeck, A.Hoffmann
J. Appl. Phys. 99, 123518 (2006)
paper [28]

Site selectivity of Fe³⁺_Ga and the formation of Fe³⁺_Ga- Ga_i pairs in GaN
W. Gehlhoff, D. Azamat, A. Hoffmann
Physica B 376-377, 790 (2006)
paper [29]

Transition metals in ZnGeP₂ and other II-IV-V₂ compounds
W. Gehlhoff, D. Azamat, A. Hoffmann, N. Dietz, O.V. Voevodina
phys. stat. sol. (b) 243, 1687 (2006)
paper [30]

Preferential substitution of Fe on physically equivalent Ga sites inGaN
W. Gehlhoff, D. Azamat, U. Haboeck, A. Hoffmann
Physica B 376-377, 486 (2006)
paper [31]

On the optical quality of InGaAsN quantum wells
L. Geelhaar, M. Galluppi, G. Jaschke, R. Averbeck, H. Riechert, T. Remmele, M. Albrecht, M. Dworzak, R. Hildebrandt, A. Hoffmann
Appl. Phys. Lett. 88, 011903 (2006)

ZnO - ein altes, neues Halbleitermaterial
C. Klingshirn, M. Grundmann, A. Hoffmann, B. K. Meyer, A. Waag
Physik Journal 5, (2006) 33
(Wiley-VCH Verlag GmbH &KGaA, Weinheim ISBN 1617-9439/06/0101-33)
paper [32]

Optical properties of InGaN quantun dots
M. Dworzak, T. Bartel, M. Strassburg, I.L. Krestnikov, A. Hoffmann, R. Seguin, S. Rodt, A. Strittmatter, D. Bimberg
Superlattices and Microstructures 36, 763 (2005)
paper [33]

Impact of Manganese incorporation on the structural and magnetic properties of MOCVD-grown Ga_1-xMn_xN
M. H. Kane, A. Asghar, H. Kang, A. M. Payne, and I.T. Ferguson, C.R. Summers, C.R. Vestal, Z.J. Zhang, M. Strassburg, J. Senawiratne, and N. Dietz,  D. Azamat, W. Gehlhoff, U. Haboeck, and A. Hoffmann
Mat. Res. Soc. Symp. Proc. 831, ISBN 1-55899-779-2, E9.4.1-6 (2005)
paper [34]

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures
as a future platform for spintronic devices
M. H. Kane, M. Strassburg, A. Asghar, Q. Song, G. S., J. Senawirante, C. Hums, U. Haboeck, A. Hoffman, D. Azamat, W. Gelhoff, N. Dietz, Z. J. Zhang, C. Summers, I. T. Ferguson
Proceedings of SPIE, vol. 5732, pp 389-400, 2005
paper [35]

Optical and structural investigations on Mn-ion states in MOCVD-grown Ga_1-xMn_xN
M. Strassburg, J. Senawiratne, Ch. Hums, N. Dietz, M.H. Kane, A. Asghar, M. Alevli, A.M. Payne, I.T. Ferguson, C.R. Summers, U. Haboeck, A. Hoffmann, D. Azamat, W. Gehlhoff
Materials Research Society Proceedings, vol. 831, pp. E9.5.1-E9.5.6, 2005.
paper [36]

Development of dual MQW region LEDs for general illumination
D.B. Nicol, A. Asghar, M. Strassburg, M. Tran, M. Pan, H. Kang, I.T. Ferguson, M. Alevi, J. Senawiratne, Ch. Hums, N. Dietz, and A. Hoffmann
Materials Research Society Proceedings, vol. 831, pp. E9.5.1-E8.5.7, 2005
paper [37]

Redistribution of excitons localized in InGaN quantum dot structures
M. Dworzak, T. Bartel, M. Strassburg, A. Hoffmann, A. Strittmatter, D. Bimberg
Proceedings 27th Int. Conf. on the Physics of Semiconductors, Flagstaff, USA, AIP, J. Menéndez and Ch. G. Van de Walle (Eds.) 772 (1), (2005) 701
paper [38]

Local Phonon Modes in InAs/GaAs Quantum Dots
A. Paarmann, F. Guffarth, T. Warming, A. Hoffmann, D. Bimberg
Proceedings 27th Int. Conf. on the Physics of Semiconductors, Flagstaff, USA, AIP, J. Menéndez and Ch. G. Van de Walle (Eds.) 772 (1), (2005) 689
paper [39]

Dephasing and energy relaxation processes in self-assembled In(Ga)As/GaAs quantum dots
M. Dworzak, P. Zimmer, H. Born, A. Hoffmann
Proceedings 27th Int. Conf. on the Physics of Semiconductors, Flagstaff, USA, AIP, J. Menéndez and Ch. G. Van de Walle (Eds.) 772 (1), (2005) 633
paper [40]

Growth of high quality AlN single crystals and their optical properties
M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck. A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar
Proceedings 27th Int. Conf. on the Physics of Semiconductors, Flagstaff, USA, AIP, J. Menéndez and Ch. G. Van de Walle (Eds.) 772 (1), (2005) 211
paper [41]

Strong-light matter coupling in a quantum dot: local field effects
G.Ya. Slepyan, A.V. Magyarov, S.A. Maksimenko, A. Hoffmann, and D. Bimberg
phys. stat. sol. (c) 2, (2005) 850
paper [42]

Raman photoluminescence and absorption studies on high quality AlN single crystals
J. Senawiratne, M. Strassburg. N. Dietz, U. Haboeck. A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar
phys. stat. sol. (c) 2(7), (2005) 2774
paper [43]

Site inaquivalence for Mn₂₊ substitution on Zn sites in ZnGeP₂ and ZnSiP₂
W. Gehlhoff, D. Azamat, V.G. Voevodin, A. Hoffmann
phys. stat. sol. (b) 242, (2005) R 14
paper [44]

High-energy vibrational modes in nitrogen-doped ZnO
U. Haboeck, A. Hoffmann, C. Thomsen, A. Zeuner, B.K. Meyer
phys. stat. sol. (b) 242, (2005) R 21
paper [45]

Excited-state carrier lifetime in single-walled carbon nanotubes
S. Reich, M. Dworzak, A. Hoffmann, C. Thomsen, M.S. Strano
Phys. Rev. B 71, (2005) 33402
paper [46]

Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGeSe₂
S. Siebentritt, I. Beckers, T. Riemann, J. Christen, M. Dworzak, and A. Hoffmann
Appl. Phys. Lett. 86, (2005) 091909
paper [47]

Excitonic Rabi oscillations in a quantum dot: local field impact
G.Ya. Slepyan, S.A. Maksimenko, A.V. Magyarov, A. Hoffmann, D. Bimberg
Proc. of the EMRS Symposium L 2004: “InN, GaN, AlN and Related Materials, their Heterostructures and Devices” Superlattices and Microstructures 36, Europ. Mat. Res. Society, (2005) 773
paper [48]

Valence band ordering and magneto-optical properties of free and bound excitons in ZnO
A.V. Rodina, M. Strassburg, M. Dworzak, U. Haboeck, A. Hoffmann, H.R. Alves, A. Zeuner, D.M. Hofmann, B.K. Meyer
in Zinc oxide- a material for micro- and optoelectronic applications,3-14, eds. by N.H. Nickel and E. Terukov,
Nato Series II: Mathematics, Physics and Chemestry- Vol. 194, 2005 Springer, printed in the Netherlands, (2005) 159 ISBN 1-4020-3474-1
paper [49]