Publikationen 2004 - 2002

On the composition dependence ZnO_1-xS_x
Bruno K. Meyer, A.Polyty, B. Farangis, Y. He, D. Hasselkamp, T. Krämer, C. Wang, U. Haboeck, and A. Hoffmann
phys. stat. sol. (c), 694 (2004)
paper

Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N
Z.C. Feng, A.M. Payne, D.N. Paul, D. Helm, I. Ferguson, J. Senawiratne, M. Strassburg, N. Dietz, Ch. Hums, A. Hoffmann
ed. H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean;
Mat. Res. Soc. Symp. Proc. 798, (2004) 545-550
paper

Optical properties of Mn-doped GaN
O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, and M. Stutzmann
ed. H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean;
Mat. Res. Soc. Symp. Proc. 798, (2004) 569-574
paper

Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN
O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg, A. Hoffmann
ed. H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean;
Mat. Res. Soc. Symp. Proc. 798, (2004) 497-502
paper

Nitrogen doping in bulk and epitaxial ZnO
A. Zeuner, H. Alves, J. Sann, W. Kriegseis, C. Neumann, D.M. Hofmann, B.K. Meyer, A. Hoffmann, U. Haboeck, M. Straßburg, and A. Kaschner
phys. stat. sol. (c) 1, (2004) 731
paper

Recombination dynamics in self-assembled InP/GaP quantum dots under high pressure
C. Kristukat, M. Dworzak, A.R. Goi, P. Zimmer, F. Hatami, S. Dreßler, A. Hoffmann<
High Pressure Conference, phys. stat. sol. (b) 241, (2004) 3263
paper

The growth and optical properties of large, high-quality AlN single crystals
M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar
J. of Appl. Phys. 96, (2004) 5870
paper

Recombination dynamics of localized excitons in InGaN quantum dots
T. Bartel, M. Dworzak, M. Strassburg, A. Hoffmann, A. Strittmatter, D. Bimberg<
Appl. Phys. Lett. 85, (2004) 1946
paper

Rabi oscillations in a semiconductor quantum dot: Influence of local fields
G.Ya. Slepyan, A. Magyarov, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Phys. Rev. B 70, (2004) 45320
paper

Doping-level-dependent optical properties of GaN : Mn
O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, M. Stutzmann
Appl. Phys. Lett. 84, (2004) 4514
paper

Dissociation of H-related defect complexes in Mg-doped GaN
O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg, A. Hoffmann
Phys. Rev. B. 69, (2004) 125210
paper

Multi-excitonic complexes in single InGaN quantum dots
R. Seguin, S. Rodt, A. Strittmatter, L. Reissmann, T. Bartel, A. Hoffmann, D. Bimberg, E. Hahn, D. Gerthsen
Appl. Phys. Lett. 84, (2004) 4023
paper

Identification of bound exciton complexes in ZnO
M. Strassburg, A. Rodina, M. Dworzak, U. Haboeck, I.L. Krestnikov, A. Hoffmann, O. Gelhausen, M.R. Phillips, H.R. Alves, A. Zeuner, D.M. Hofmann, B.K. Meyer
phys. stat. sol. (b) 241, (2004) 607
paper

Magneto-optical properties of bound excitons in ZnO
A.V. Rodina, M. Straßburg, M. Dworzak, U. Haboeck, A. Hoffmann, A. Zeuner, H.R. Alves, D.M. Hofmann, B.K. Meyer
Phys. Rev. B 69, (2004) 125206

Bound exciton and donor-acceptor pair recombination in ZnO
B.K. Meyer, H.R. Alves, D.M. Hofmann, W. Kriegeis, D. Foerster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A.V. Rodina
phys. stat. sol. (b) 241, (2004) 231
paper

Exciton-phonon coupling of localized quasi-2D excitons in semiconductor quantum well heterostructures
I.V. Bondarev, S.A. Maksimenko, G.Ya. Slepyan, I.L. Krestnikov, A. Hoffmann
Physics, Chemistry and  Application of Nanostructures, eds. V.E. Borisenko, S.V. Gaponenko, and V.S. Gurin, World Scientific Singapore , (2003) 302
paper

Structure and energy level of native defects in as-grown and electron-irradiated zinc germanium diphosphide studied by EPR and photo-EPR
W. Gehlhoff, D. Azamat, A. Hoffmann, N. Dietz
J. of Physics and Chemistry of Solids 64, (2003) 1923
paper

5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May 2003
A. Hoffmann
phys. stat. sol (b) 239, (2003) 273
paper

5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May 2003
A. Hoffmann
phys. stat. sol (a) 199, (2003) 157
paper

Optically detected magnetic resonance experiments on native defects in ZnGeP₂
D.M. Hofmann, N.G. Romanov, W. Gehlhoff, D. Pfisterer, B.K. Meyer, D. Azamat, A. Hoffmann
Physica B 340-342, (2003) 978
paper

EPR and electrical studies of native point defects in ZnSiP₂ semiconductors
W. Gehlhoff, D. Azamat, A. Krtschil, A. Hoffmann, A. Krost
Physica B 340-342, (2003) 933
paper

Exciton-phonon interactions and exciton pure dephasing in lens-shaped quantum dots
I.V. Bondarev, S.A. Maksimenko, G.Ya. Slepyan, I.L. Krestnikov, A. Hoffmann
Materials Science & Engineering C 23, (2003) 1107

Lateral carrier transfer in Cd_xZn_1-xSe/ZnSySe_1-y quantum dot layers
S. Rodt, V. Türck, R. Heitz, F. Guffarth, R. Engelhardt, U.W. Pohl, M. Strassburg, M. Dworzak, A. Hoffmann, D. Bimberg
Phys. Rev. B 67, (2003) 235327
paper

Inherent nature of localized states in highly-planar monolayer InAs/GaAsN pseudo-alloys
I.L. Krestnikov, R. Heitz, N.N. Ledentsov, A. Hoffmann, A.M. Mintarov, T.H. Kosel, J.L. Merz, I.P. Shoshnikov, V.M. Ustinov
Appl. Phys. Lett. 83, (2003) 3728
paper

Stress analysis of AlxGa1-xN films with microcracks
D. Rudloff, T. Riemann, J. Christen, Q.K.K. Liu, K. Vogeler, S. Einfeldt, D. Hommel, A. Kaschner, A. Hoffmann, C. Thomsen
Appl. Phys. Lett. 82, (2003) 367
paper

Direct evidence for nanoscale carrier localization in InGaN/GaN structures grown on Si substrates
I.L.Krestnikov, M. Strassburg, A. Strittmatter, N.N. Ledentsov, A. Hoffmann, D. Bimberg, J. Christen
Jpn. J. Appl. Phys. 42, (2003) L 1057
paper

Exciton-phonon interactions and exciton dephasing in semiconductor quantum well heterostructures
I.V. Bondarev, S.A. Maksimenko, G.Ya. Slepyan, I.L. Krestnikov, A. Hoffmann
Phys. Rev. B 68, (2003) 73310
paper

EPR studies of native and impurity defects in II-IV-V₂ semiconductors
W. Gehlhoff, D. Azamat, A. Hoffmann
Mat. Sci. Semicond. Processing 6, (2003) 379
paper

Excitonic composites
G.A. Slepyan, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Advances in Electromagnetics of Complex Media and Metamaterials, S. Zouhdi et al. (eds.), Netherlands, (2003) 385-402
paper

The origin of the photoluminescence Stokes shift in ternary group-III nitrides : Field effects and localization
M. Straßburg, A. Hoffmann J. Holst, J. Christen, T. Riemann, F. Bertram, P. Fischer
phys. stat. sol. (c) 0, (2003) 1835
paper

Lattice dynamics in GaN and AlN probed with first- and second-order Raman spectroscopy
U. Haboeck, H. Siegle, A. Hoffmann, C. Thomsen
phys. stat. sol. (c) 0, (2003) 1710
paper

Local vibrational modes and compensation effects in Mg-doped GaN
A. Hoffmann, A. Kaschner, C. Thomsen
phys. stat. sol. (c) 0, (2003) 1783
paper

Optical micro-characterization of group-III nitrides: Correlation of structural, electronic and optical properties
J. Christen, T. Riemann, F. Bertram, D. Rudloff, P. Fischer. A. Kaschner, U. Haboeck, A. Hoffmann, C. Thomsen
phys. stat. sol. (c) 0, (2003) 1795
paper

Radiation hardness of InGaAs/GaAs quantum dots
F. Guffarth, R. Heitz, M. Geller, C. Kapteyn, H. Born, R. Sellin, A. Hoffmann, D. Bimberg, N.A. Sobolev, M.C. Carmo
Appl. Phys. Lett. 82, (2003) 1941
paper

Carrier dynamics in particle-irradiated InGaAs/GaAs quantum dots
A. Cavaco, N.A. Sobolev, M.C. Carmo, F. Guffarth, H. Born, R. Heitz, A. Hoffmann, D. Bimberg
phys. stat. sol. (c) 0, (2003) 1177
paper

Donor centers in Zinc Germanium Diphosphide produced by electron irradiation
W. Gehlhoff, D. Azamat, A. Hoffmann
phys. stat. sol. (b) 235, (2003) 151
paper

Growth and p-type doping of ZnSeTe on InP
Matthias Strassburg, Martin Strassburg, O. Schulz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.G. Kontos, Y.S. Raptis
J. Cryst. Growth 248, (2003) 50
paper

Light emitters fabricated on bulk GaN substrates: Challenges and achievements
Piotr Perlin, M.  Leszczynki, P. Prystavko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski, V.Yu. Ivanov, M. Godlewski, J. Holst, A. Hoffmann
Mat. Res. Soc. Symp. Proc. Vol. 693, (2003) 303

Local field effects in quantum optics of quantum dots
G. Ya Slepyan, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Proceedings of 26th Conf. Phys. Semicond., Edinburgh 2002, Institute of Phys., Conf. Ser. 171, ed. by A.R. Long and J.H. Davis , (2003) D 154

Properties of the nitrogen acceptor in ZnO
Martin Straßburg, U. Haboeck, A. Kaschner, Mathias Straßburg, A. Rodnina,
A. Hoffmann, C. Thomsen, A. Zeuner, H.R. Alves, D.M. Hofmann, B.K. Meyer
Proceedings of 26th Conf. Phys. Semicond., Edinburgh 2002
paper

Evidence of quantum dots in "quantum well" InGaN/GaN structures
I.L. Krestnikov, A. Strittmatter, A.V. Sakharov, W.V. Lundin, A.F. Tsatsul'nikov,
Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Proceedings of 26th Conf. Phys. Semicond., Edinburgh 2002

Optical properties of the nitrogen acceptor in epitaxial ZnO
A. Zeuner, H.R. Alves, D.M. Hofmann, B.K. Meyer, A. Hoffmann U. Haboeck,
M. Straßburg,M. Dworzak
phys. stat. sol. (b) 234 (2002), R 7

Correlation of surface potential, free carrier concentration and light emission in ELO GaN growth domains
U. Haboeck, A. Kaschner, A. Hoffmann, C. Thomsen, T. Riemann, A. Krtschil, J. Christen, A. Krost,M. Seyboth, F. Habel
pdf</button> phys. stat. sol. (b) 234 (2002), 911
paper

Quantum optics of a quantum dot: local-field effects
G. Ya Slepyan, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Phys. Rev. A 66 (2002), 063804
paper

Time-resolved studies of InGaN/GaN quantum dots
I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul'nikov,
Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
phys. stat. sol. (b) 192 (2002), 49
paper

Quantum dot semiconductor lasers
N.N. Ledentsov, A. Hoffmann, I.L. Krestnikov, V.M. Ustinov, D. Bimberg, Zh. I. Alferov
Proc. Of Commemorative Int. Symp. For the 40^th Anniversary of the Foundation of the Osaka
Electro-Communication University (2002), 567

Effect of annealing on the In and N distribution in InGaAsN quantum wells
M. Albrecht, V. Grillo, Th. Remmle, H.P. Strunk, A. Yu. Egorov, A. Kaschner, R. Heitz, A. Hoffmann
Appl. Phys. Lett. 81 (2002), 2719
paper

ZnCdSe quantum structures- growth, optical properties, and applications
Martin Strassburg, O. Schulz, Mathias Strassburg, U.W. Pohl, R. Heitz, A. Hoffmann, D. Bimberg, M. Klude, D. Hommel, K. Lischka, D. Schikorra
Festkörperprobleme 42, Advances in Solid State Physics (2002), ed. by B. Kramer, 27
paper

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates
T. Riemann, J. Christen, A. Kaschner, A. Laades, A. Hoffmann, C. Thomsen, M. Iwaya, S. Kamyama, H. Amano, I. Akasaki
Appl. Phys. Lett. 80 (2002), 3093
paper
 
Effect of the (OH) surface capping on ZnO quantum dots
H. Zhou, H. Alves, D.M. Hofmann, B.K. Meyer, G. Kaczmarczyk, A. Hoffmann, C. Thomsen
phys. stat. sol. (b) 229 (2002), 825
paper

Heteroepitaxy of ZnO on GaN templates
A. Zeuner, H. Alves, D.M. Hofmann; B.K. Meyer, A. Hoffmann, G. Kaczmarczyk, M. Heuken, A. Krost, J. Bläsing
phys. stat. sol. (b) 229 (2002), 907
paper

Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)₂core-shell structure
H. Zhou, H. Alves, D.M. Hofmann, W. Kriegeis, B.K. Meyer, G. Kaczmarczyk, A. Hoffmann
Appl. Phys. Lett. 80 (2002), 210
paper
 
Nitrogen-related local vibrational modes in ZnO:N
A. Kaschner, U. Haboeck, Martin Straßburg, Matthias Straßburg, G. Kaczmarczyk, A. Hoffmann, C. Thomsen, A. Zeuner, H. R. Alves, D. M. Hofmann, and B. K. Meyer
Appl. Phys. Lett. 80 (2002), 1909
paper

Local field effects in an isolated quantum dot: self-consistent microscopic approach
S.A. Maksimenko, G. Ya Slepyan, A. Hoffmann, D. Bimberg
phys. stat. sol. (a) 190 (2002), 555
paper

Shape-dependent exciton dynamics in InGaAs/GaAs quantum dots
R. Heitz, H. Born, F. Guffarth, O. Stier, A. Schliwa, A. Hoffmann, D. Bimberg
phys. stat. sol. (a) 190 (2002), 499
paper

Localization effects in InGaN multi-quantum well structures
A. Hoffmann, R. Heitz, A. Kaschner, T. Lüttgert, H. Born, A.Y. Egorov, H. Riechert
Materials Science and Engineering B 93 (2002), 55
paper

Lateral redistribution of excitons in CdSe/ZnSe quantum dots
M. Straßburg^*, M. Dworzak, H. Born, R. Heitz, A. Hoffmann,
M. Bartels, K. Lischka, D. Schikora, J. Christen
Appl. Phys. Lett. 80 (2002), 473
paper
 
Tuned exciton kinetics in self-organized InGaAs/GaAs quantum dots
H. Born, R. Heitz, A. Hoffmann, D. Bimberg
J. Physica E 13, (2002), 233
paper

Microscopic analysis of high quality thick ZnO CVD layers: imaging of growth domains, strain relaxation, and impurity incorporation
T. Riemann, J. Christen, G. Kaczmarczyk, A. Kaschner, A. Hoffmann, A. Zeuner, D. Hofmann, B.K. Meyer
phys. stat. sol. (b) 229 (2002), 891
paper

Analysis of quantum dot formation and exciton localisation in the (Zn,Cd)(S,Se) system
M. Straßburg, J. Christen, M. Dwororzak, A. Hoffmann, M. Bartels, K. Lischka, D. Schikora
phys. stat. sol. (b) 229 (2002), 529
paper

A quantitative analysis of two-colour pump and probe spectra from bound excitons in compensated II-VI semiconductors
I. Broser, A. Hoffmann, V. Kutzer
phys. stat. sol. (b) 229 (2002), 617
paper

Quantum dot origin of luminescence in InGaN/GaN structures
I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, B. Bimberg, A.V. Sakharov, W.V. Lundin, A.F. Tsatsul’nikov, A.S. Usikov, Zh.I. Alferov, Yu. G. Musikhin, D. Gerthsen
Phys. Rev. B 66 (2002), 155310
paper