2002

A Quantitative Analysis of Two-Colour Pump and Probe Spectra from Bound Excitons in Compensated II-VI Semiconductors
I. Broser, A. Hoffmann, and V. Kutzer
phys. stat. sol (b) 229, No. 2, 617-620 (2002)

2000

Time-resolved micro-photoluminescence of epitaxial laterally overgrwon GaN
A. Kaschner, J. Holst, A. Hoffmann, I. Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki
Mat. Science Forum 338-343 (2000), 1575

Time-resolved micro-photoluminescence of epitaxial laterally overgrwon GaN
J. Holst, A. Kaschner, A. Hoffmann, I. Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, and N. Sawaki
J. Lumin. 87/89 (2000), 1192-1195

1999

Mechanisms of optical gain in cubic GaN and InGaN
J. Holst, A. Hoffmann, I. Broser, T. Frey, B. Schöttker, D. J. As, D. Schikora, and K. Lischka
Material Research Soc. Internet Journal of Nitride Semiconductor Research, 4S1, Boston (USA) (1999), G2.3, Material Research Society Symposium 537

Impact of structural properties on the mechanisms of optical amplification in cubic InGaN
J. Holst, A. Hoffmann, I. Broser, D. Rudloff, F. Bertram, T. Riemann, J. Christen, T. Frey, D. J. As, D. Schikora, and K. Lischka
phys. stat. sol. (b) 216 (1999), 471 

Optical gain and stimulated emission of cleaved cubic GaN
J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D. J. As, D. Schikora, and K. Lischka
Appl. Phys. Lett. 74 (1999), 1966

1998

Raman scattering from defects in GaN: Vibrational or electronic scattering mechanism?
H. Siegle, A. Kaschner, A. Hoffmann, I. Broser, and C. Thomsen
Phys. Rev. B 58 (1998), 13 619 

Structural disordering and recombination processes in Co-doped ZnSe-based alloys
T.P.Surkova, M. Godlewski, K. Swiatek, A.J. Zakrzewski, A. Sienkiewicz, H. Born, W. Busse, H.-E. Gumlich, A. Hoffmann, P. Thurian, I. Broser, and W. Giriat
phys. stat. sol. (b) 210 (1998) 

Properties of the intermediately bound α -, β - and γ -excitons in ZnO:Cu
P. Dahan, V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser
J.Phys.: Condens. Matter 10 (1998), 2007-2019 

Radiative and Nonradiative Relaxation of Excitons in GaN
A. Göldner, L. Eckey, A. Hoffmann, I. Broser, A. Alemu, B. Gil, S. Ruffenach-Clur, R.L. Aulombard, and O. Briot
Material Research Soc. Symp. Boston (1998), ed. F.A. Ponce, S. Denbaars, S. Strite, B.K. Meyer,
Vol. 482, p 637 

Fine structure and magnetooptics of excitonic levels in Wurtzite GaN
L. Eckey, A. Hoffmann, P. Thurian, I. Broser, B.K. Meyer, and K. Hiramatsu
Material Research Soc. Symp. Boston (1998), ed, F.A. Ponce, S. Denbaars, S. Strite, B.K. Meyer,
Vol. 482, p 555 

Isotope shift in semiconductors with transition-metal impurities: Experiment and theory applied to ZnO:Cu
P. Dahan, V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 57 (1998), 9690-9694

Mechanisms of Optical Gain in Cubic Gallium Nitrite
J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, and K. Lischka
Appl. Phys. Lett. 72 (1998), 1439

Gain studies of (Cd, Zn)Se quantum islands in ZnSe matrix
M. Strassburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg,
A. Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop'ev, and Zh.I. Alferov
Appl. Phys. Lett. 72 (1998,) 942-94 

Fünfzig Jahre Szintillationszähler
I. Broser
phys. Bl. 54 (1998) Nr. 10, 935-937 

Light from fast electrons - The scintillation counter
I. Broser
Semiconductor News, July-December 1997, 113-118 

Photoluminescence dynamics of Co doped
H. Born, P. Thurian, T. Surkova, A. Hoffmann, W. Busse, H.-E. Gumlich, I. Broser, and W. Giriat
J. Cryst. Growth 184/185 (1998), 1132-1136 

Gain to absorption conversion by increasing excitation density in excitonic waveguides
V. Kutzer, M. Strassburg, A. Hoffmann, I. Broser, U. W. Pohl, N.N. Ledentsov, D. Bimberg, and S.V. Ivanov
J. Cryst. Growth 184-185 (1998), 632
 

1997

Raman scattering from defects in GaN
H. Siegle, A. Kaschner, P. Thurian, A. Hoffmann, I. Broser, and C. Thomsen
Material Science Forum 258-263 (1997), 1197

Photoluminescence of Co-doped ZnCdSe and ZnSSe alloys
T. P. Surkova, H. Born, P. Thurian, A. Hoffmann, W. Busse, H.-E. Gumlich, I. Broser, and W. Giriat
Acta Physica Polonica A 92 (1997), 1013-1016 

Optical gain measurements of GaN and Al_xGa_1-xN heterostructures
L. Eckey, J. Holst, V. Kutzer, A. Hoffmann, I. Broser, O. Ambacher, M. Stutzmann, H. Amano, and I. Akasaki
GaN and Related Materials, Material Research Soc. Symposium, San Francisco (1997), ed.
C. Abernathy, H. Amano J. Zolper, Pittsburgh, Vol. 486 (1997), 237

Properties of the biexciton and the electron-hole plasma in highly excited GaN
J. Holst, L. Eckey, A. Hoffmann, I. Broser, H. Amano, and I. Akasaki
2^nd European GaN Workshop, Material Research Soc. Internet Journal of Nitride Semiconductor Research, Walbronn (France) (1997), Vol. 2. Article 25 

Photoluminescence of Fe-complexes in GaN
P. Thurian, A. Hoffmann, P. Maxim, L. Eckey, R. Heitz, I. Broser, K. Pressel, B. K. Meyer, J. Schneider, J. Baur, and M. Kunzer
ed. F. A. Ponce, J. A. Edmund, Material Research Soc. Symp. Boston (1997), Vol. 449,707

707Comment on: Shallow Donors in GaN Studied by Electronic Raman Scattering in Resonance with Yellow Luminescence Transition
H. Siegle, I. Loa, P. Thurian, L. Eckey, A. Hoffmann, I. Broser, and C. Thomsen
Appl. Phys. Lett. 70 (1997), 909

Excited states of Fe³⁺ in GaN
R. Heitz, P. Maxim, L. Eckey, P. Thurian, A. Hoffmann, I. Broser, K. Pressel, and B.K. Meyer
Phys. Rev. B 55 (1997), 4382

Jahn-Teller effect of Cu²⁺ in II-VI compounds
P. Thurian, R. Heitz, G. Kaczmarczyk, A. Hoffmann, and I. Broser
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems (Jahn-Teller Effect),
Berlin, Germany (1996), ed. H.-J. Schulz, special issue of Zeitschrift für Physikalische
Chemie, Bd 201 (1997), 411

Photoluminescence and optical gain in highly excited GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu
J. Lumin. 72-74 (1997), 59

Intensity-dependent hot-phonon relaxation in ZnSe
V. Kutzer, H. Siegle, C. Thomsen, A. Hoffmann, and I. Broser
Mat. Science & Engineering B 43 (1997), 46