Inhalt des Dokuments
Publikationen 1996 - 1994
1996
Optical properties of highly excited GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, and K. Hiramatsu
23rd ICPS, Berlin, Germany, copyright by World Scientific Publishing, ed. M. Scheffler, R. Zimmermann, (1996), 2861
Fe-related defects in GaN epilayers
P. Thurian, R. Heitz, L. Eckey, P. Maxim, V. Kutzer, A. Hoffmann, I. Broser, K. Pressel, and B.K. Meyer
23rd ICPS, Berlin, Germany, copyright by World Scientific Publishing, ed. M. Scheffler, R. Zimmermann, (1996), 2897
Gain spectroscopy of HVPE-grown GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, T. Detchprohm, and K. Hiramatsu
1st European GaN Workshop, Material Research Soc. Internet Journal of Nitride Semiconductor Research, Rigi (Switzerland) (1996), 125
Micro-Raman-scattering experiments of GaN layers deposited on sapphire and SiC.
Siegle, P. Thurian, L. Eckey, G. Kaczmarczyk, L. Filippidis, A. Hoffmann, I. Broser,A.P. Litvinchuk, C. Thomsen, T. Detchprohm, and K. HiramatsuOhmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light Emitting Diodes, ed. A. Yoshikawa, K. Kishino, T. Yasuda, (1996), 488
Defects in cubic and hexagonal GaN epilayers
P. Thurian, L. Eckey, H, Siegle, J. Holst, P. Maxim, R. Heitz, A. Hoffmann, C. Thomsen, I. Broser, K. Pressel, I. Akasaki, H. Amano, K. Hiramatsu, T. Detchprohm, D. Schikora, M. Hankeln, and K. Lischka
Ohmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light Emitting Diodes, ed. A. Yoshikawa, K. Kishino, T. Yasuda, (1996), 180
Excitonic structure of GaN epitaxial films grown by hydride-vapor-phase epitaxy
L. Eckey, L. Podlowski, A. Göldner, A. Hoffmann, I. Broser, B.K. Meyer, D. Volm, T.
Streibl, K. Hiramatsu , T. Detchprohm, H. Amano, and I. Akasaki
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), 943
Relaxation and recombination dynamics in GaN/Al2O3 epilayers
L. Eckey, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, K. Hiramatsu, T. Detchprohm, H. Amano, and I. Akasaki
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), 927
Pulse-propagation-induced higher orders of diffraction in transient four-wave mixing with semiconductors
B. Lummer, J.-M. Wagner, R. Heitz, A. Hoffmann, I. Broser, and R. Zimmermann
Phys. Rev. B 54 (1996), 16727
Nonlinear Zeeman behavior of Cu2+ centers in ZnS and CdS explained by a Jahn-Teller effect
T. Telahun, U. Scherz, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 53 (1996), 1274
Dynamics of bound-exciton luminescence from epitaxial GaN
L. Eckey, J. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E.N. Mokhov, and P.G. Baranov
Appl. Phys. Lett. 68 (1996), 415
Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE
R. Heitz, E. Moll, V. Kutzer, D. Wiesmann, B. Lummer, A. Hoffmann, I. Broser, P. Bäume, W. Taudt, J. Söllner, and M. Heuken
J. Cryst. Growth 159 (1996), 307
Local vibrational modes of the CuO4-cluster in ZnO
I. Broser, G. Kaczmarczyk, P. Thurian, R. Heitz, and A. Hoffmann
J. Cryst. Growth 159 (1996), 889
Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
A. Hoffmann, D. Wiesmann, I. Loa, R. Heitz, W. Pohl, I. Broser, L. Worschech, E. Kurtz, D. Hommel, G. Landwehr, D. Hofmann, and B.K. Meyer
J. Cryst. Growth 159 (1996), 302
Acceptor bound biexcitons in ZnSe and CdS
V. Kutzer, B. Lummer, R. Heitz, A. Hoffmann, I. Broser, E. Kurtz, and D. Hommel
J. Cryst. Growth 159 (1996), 776
1995
Selective dynamical study of luminescence near the surface and the interface of epitaxial GaN
L. Eckey, A. Hoffmann, R. Heitz, I. Broser, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, and I. Akasaki
1st Int. Symposium on GaN and Related Materials, ed. R.D. Dupuis, S. Nakamura, F.A. Ponce, J.A. Edmund, Material Research
Soc. Symp. Boston (1995), Vol. 395, 589
Nonlinear Zeeman behavior of copper centers in ZnS and CdS
T. Telahun, P. Thurian, A. Hoffmann, I. Broser, and U. Scherz
Material Science Forum 196-201 (1995), 767-772, 18th ICDS 1995, Sendai
Zeeman spectroscopy of transition metals in hexagonal GaN
R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov
Material Science Forum 196-201 (1995), 719
Time resolved photoluminescence spectroscopy on GaN epitaxial layers
B.K. Meyer, D. Volm, C. Wetzel, L. Eckey, J. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, E.N. Mokhov, P.G. Baranov, C. Qiu, and J.I. Pankove
Defect and Impurity Engineered Semiconductors and Devices, Symposium, San Francisco (1995), ed. S. Ashok, J. Chevallier, I. Akasaki,
N.M. Johnson, Pittsburgh, Material Research Soc., Vol 378 (1995), 521
Identification of the 1.19-eV luminescence in hexagonal GaN
R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov
Phys. Rev. B 52 (1995), 16508
Local vibrational modes of 3d elements in wurtzite type ZnO and GaN crystals
P. Thurian, G. Kaczmarczyk, H. Siegle, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, R. Hoffbauer, and U. Scherz
Material Science Forum 196-201 (1995), 1571
Calorimetric absorption spectroscopy of deep defects and quantum dots
R. Heitz, L. Podlowski, J. Böhrer, A. Hoffmann, I. Broser, and D. Bimberg
Acta Physica Polonica A 88 (1995), 619
Zeeman spectroscopy of the Fe3+ center in GaN
R. Heitz, P. Thurian, I. Loa, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov
Appl. Phys. Lett. 67 (1995), 2822
Dephasing of acceptor bound excitons in II-VI semiconductors
B. Lummer, R. Heitz, V. Kutzer, J.-M. Wagner, A. Hoffmann, and I. Broser
phys. stat. sol. (b) 188, (1995), 493
Absorption as optical access to acceptor concentrations and compensation mechanisms in ZnSe epilayers
R. Heitz, B. Lummer, V. Kutzer, D. Wiesmann, A. Hoffmann, I. Broser, E. Kurtz, S. Einfeldt, J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 259
Degenerate-four-wave-mixing at the nitrogen acceptor bound exciton in ZnSe epilayers
A. Hoffmann, B. Lummer, V. Kutzer, L. Eckey, R. Heitz, I. Broser, E. Kurtz, J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 283
1994
Inequivalence of staggered interfaces in InAlAs/InP multi quantum well structures
F. Heinrichsdorff, J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, and I. Broser
22nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing editor J. Lockwood, (1994), 695
Higher order photon echo in four-wave-mixing experiments
R. Heitz, B. Lummer, J.-M. Wagner, A. Hoffmann, I. Broser, and R. Zimmermann
22nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing editor J. Lockwood, (1994), 365
Radiative and nonradiative relaxation dynamics of transition metal centers in semiconductors
R. Heitz, L. Podlowski, P. Thurian, A. Hoffmann, and I. Broser
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing editor J. Lockwood, (1994), 2379
Non-linear optical processes in birefringent and dichroitic wide band gap semiconductor
I. Broser, Ch. Fricke, R. Heitz, and A. Hoffmann
22nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing editor J. Lockwood, (1994), 405
Quantitative determination of the compensation in nitrogen doped ZnSe epilayers
A. Hoffmann, R. Heitz, B. Lummer, V. Kutzer, L. Eckey, I. Broser, E. Kurtz, D. Hommel, B. Jobst, J. Nürnberger, and G. Landwehr
22nd Int. Conf. on the Phys. of Semicond, copyright by World Scientific Publishing, editor J. Lockwood, (1994), 2661
High-resolution Zeeman spectroscopy of Ni2+ in
R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 50 (1994), 17028
Nonradiative relaxation and the Jahn-Teller effect of Fe2+ in III-V semiconductors
R. Heitz, L. Podlowski, A. Hoffmann, and I. Broser
Proc. of the 8th Conference on Semi-Insulating III-V Materials (1994), 115
Exciton dynamics in Ni-activated CdS
R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 49 (1994), 17028
The influence of nitrogen on the p-conductivity in ZnSe epilayers grown by molecular beam epitaxy
A. Hoffmann, B. Lummer, L. Eckey, V. Kutzer, Ch. Fricke, R. Heitz, I. Broser, E. Kurtz, B. Jobst, and D. Hommel
J. Crystal Growth 138 (1994), 1073
Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapour deposition
E. Krause, H. Hartmann, J. Menniger, A. Hoffmann, Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, and I. Broser
J. Crystal Growth 138 (1994), 75
Degenerate four-wave mixing at bound excitons in II-VI semiconductors
I. Broser, B. Lummer, R. Heitz, and A. Hoffmann
J. Crystal Growth 138 (1994), 809
Time-resolved donor-acceptor pair recombination luminescence in highly n- and p-doped II-VI semiconductors
Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, A. Hoffmann, I. Broser, W. Taudt, and M. Heuken
J. Crystal Growth 138 (1994), 815
Incorporation of nitrogen in ZnSe grown by metalorganic vapour phase epitaxy
A. Hoffmann, R. Heitz, B. Lummer, Ch. Fricke, V. Kutzer, I. Broser, W. Taudt, G. Gleitsmann, and M. Heuken
J. Crystal Growth 138 (1994), 379
Energy transfer processes via the interface of ZnSe/GaAs epilayers
N. Presser, Ch. Fricke, G. Kudlek, R. Heitz, A. Hoffmann, and I. Broser
J. Crystal Growth 138 (1994), 820
Recombination mechanisms in highly doped CdS:In
Ch. Fricke, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 49 (1994), 5313
Spontaneous Photon Echo from the (A0,X) Complex in CdS
R. Heitz, B. Lummer, A. Hoffmann, and I. Broser
J. Lumin. 58 (1994), 237
Non-radiative transition rates of Fe2+ in III-V and II-VI semiconductors
L. Podlowski, R. Heitz, P. Thurian, A. Hoffmann, and I. Broser
J. Lumin. 58 (1994), 252-256
Calorimetric absorption spectroscopy of copper in II-VI semiconductors at mK temperatures
I. Broser, L. Podlowski, P. Thurian, R. Heitz, and A. Hoffmann
J. Lumin. 60 & 61 (1994), 588-591
Metal Ligand Induced Isotope Shifts of Transition Centers in Zn0
P. Thurian, R. Heitz, S. Kleinwächter, A. Hoffmann, and I. Broser
Materials Science Forum 143-147 (1994), 453
Energy Transfer Between Fe2+ Centers in Polymorphic ZnS
A. Hoffmann, L. Podlowski, P. Thurian, R. Heitz, I. Broser, F. Fuchs, and P. Koidl
Materials Science Forum 143-147 (1994), 411
Fine Structure of the (Fe2+,h) Bound States in GaP and InP
L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, and W. Ulrici
Materials Science Forum 143-147 (1994), 311
Phase Transition from the Cubic to the Hexagonal Modification in Thin CdS Films on InP (110)
D.R.T. Zahn, G. Kudlek, U. Rossow, A. Hoffmann, I. Broser, and W. Richter
Advanced Materials for Optics and Electronic 3 (1994), 11