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A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
Zitatschlüssel Hjort2021
Autor Hjort, Filip and Enslin, Johannes and Cobet, Munise and Bergmann, Michael A. and Gustavsson, Johan and Kolbe, Tim and Knauer, Arne and Nippert, Felix and Häusler, Ines and Wagner, Markus R. and Wernicke, Tim and Kneissl, Michael and Haglund, Åsa
Seiten 135–141
Jahr 2021
ISSN 23304022
DOI 10.1021/acsphotonics.0c01382
Journal ACS Photonics
Jahrgang 8
Zusammenfassung Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280-320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320-400 nm) to UVC (textless280 nm).
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