| Zitatschlüssel |
Schmidt2020 |
| Autor |
Schmidt, G. and Berger, C. and Dadgar, A. and Bertram, F. and Strittmatter, A. and Christen, J. and Jagsch, S. T. and Wagner, M. R. and Hoffmann, A. |
| Seiten |
453–504 |
| Jahr |
2020 |
| ISBN |
978-3-030-35656-9 |
| DOI |
10.1007/978-3-030-35656-9 |
| Journal |
Semiconductor Nanophotonics - Materials, Models, Devices |
| Jahrgang |
194 |
| Herausgeber |
Kneissl, Michael and Knorr, Andreas and Reitzenstein, Stephan and Hoffmann, Axel |
| Verlag |
Springer - Series in Materials Science |
| Kapitel |
12 |
| Zusammenfassung |
Microcavities with InGaN quantum wells or GaN‐based quantum dots as active medium are building blocks of electrically‐driven, low‐threshold surface‐emitting lasers or single photon emitters in the visible‐to‐UV spectral range. In this chapter, we highlight essential developments in epitaxial growth techniques of such nitride‐based microcavities and their active regions. Modern analytical techniques for structural and optical characterization of these 2 complex heterostructures as presented in this chapter are essential to solve remaining challenges. |
