Wagner, M. R. (2005). Optical Spectroscopy of Defects and Impurities in ZnO. Technische Universität Berlin - Diploma Thesis 1–115

Wagner, M. R., Haboeck, U., Zimmer, P., Hoffmann, A., Lautenschlaeger, S., Neumann, C., Sann, J. and Meyer, B. K.: Photonic properties of ZnO epilayers, Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series 6474, 64740X–1 (2007).

Kunert, H., Machatine, A. and Hoffmann, A.: Phonons in sapphire Al2O3 substrate for ZnO and GaN, Materials Science and Engineering C 27, 1222 (2007).

Machatine, A. G. J., Kunert, H. W., Hoffmann, A., Malherbe, J. B., Barnas, J., Seguin, R., Wagner, M. R., Niyongabo, P. and Nephale, N.: Phonons and electronic states of ZnO, Al2O3 and Ge in the presence of time reversal symmetry, Journal of Physics: Conference Series 92, 012071 (2007).

Wagner, M. R., Zimmer, P., Hoffmann, A. and Thomsen, C.: Resonant Raman scattering at exciton intermediate states in ZnO, physica status solidi (RRL) – Rapid Research Letters 1, 169–171 (2007).

Meyer, B. K., Sann, J., Lautenschlaeger, S., Wagner, M. R. and Hoffmann, A.: Ionized and neutral donor-bound excitons in ZnO, Physical Review B 76, 184120 (2007).

Bartel, T., Wagner, M. R., Haboeck, U., Hoffmann, A., Neumann, C., Lautenschläger, S., Sann, J., Meyer, B. K., Lautenschlaeager, S., Sann, J. and Meyer, B. K.: Optical and structural properties of homoepitaxial ZnO, Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series 6895, 689502 (2008).

Lautenschlaeger, S., Sann, J., Volbers, N., Meyer, B. K., Hoffmann, A., Haboeck, U. and Wagner, M. R.: Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films, Physical Review B 77, 144108 (2008).

Kunert, H. W., Machatine, A. G. J., Malherbe, J. B., Barnas, J., Hoffmann, A. and Wagner, M. R.: Elementary excitations in Si, Ge, and diamond time reversal affected, Thin Solid Films 517, 372–375 (2008).

Kunert, H. W., Machatine, A. G. J., Malherbe, J. B., Barnas, J., Hoffmann, A. and Wagner, M. R.: Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure, Thin Solid Films 517, 134–136 (2008).

Wagner, M. R., Bartel, T. P., Kirste, R., Hoffmann, A., Sann, J., Lautenschlaeger, S., Meyer, B. K. and Kisielowski, C.: Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition, Physical Review B 79, 35307 (2009).

Polarz, S., Orlov, A., Hoffmann, A., Wagner, M. R., Rauch, C., Kirste, R., Gehlhoff, W., Aksu, Y., Driess, M., Van den Berg, M. W. E. and Lehmann, M.: A Systematic Study on Zinc Oxide Materials Containing Group I Metals (Li, Na, K)- Synthesis from Organometallic Precursors, Characterization, and Properties, Chemistry of Materials 21, 3889 (2009).

Lautenschlaeger, S., Eisermann, S., Meyer, B. K., Callison, G., Wagner, M. R. and Hoffmann, A.: Nitrogen incorporation in homoepitaxial ZnO CVD epilayers, physica status solidi (RRL) - Rapid Research Letters 3, 16–18 (2009).

Wagner, M. R., Kunert, H. W., Machatine, A. G. J., Hoffmann, A., Niyongabo, P., Malherbe, J. and Barnas, J.: Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry, Microelectronics Journal 40, 289–292 (2009).

Wagner, M. R., Schulze, J.-H., Kirste, R., Cobet, M., Hoffmann, A., Rauch, C., Rodina, A. V., Meyer, B. K., Röder, U. and Thonke, K.: Gamma7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies, Physical Review B 80, 205203 (2009).