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A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
Zitatschlüssel Hjort2020
Autor Hjort, Filip and Enslin, Johannes and Cobet, Munise and Bergmann, Michael A. and Gustavsson, Johan and Kolbe, Tim and Knauer, Arne and Nippert, Felix and Häusler, Ines and Wagner, Markus R. and Wernicke, Tim and Kneissl, Michael and Haglund, Åsa
Seiten acsphotonics.0c01382
Jahr 2020
ISSN 2330-4022
DOI 10.1021/acsphotonics.0c01382
Journal ACS Photonics
Monat dec
Verlag American Chemical Society
Zusammenfassung Ultraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280−320 nm) at room temperature, having an Al 0.60 Ga 0.40 N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electro-chemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320−400 nm) to UVC (textless280 nm).
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