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Puplikationen in Fachjournalen

K

Kirste, R., Wagner, M. R., Nenstiel, C., Brunner, F., Weyers, M. and Hoffmann, A.: Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire, physica status solidi (a) 210, 285–290 (2012).

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Kunert, H. W., Wagner, M. R., Machatine, A. G. J., Niyongabo, P., Malherbe, J. B., Hoffmann, A., Barna's, J. and Florek, W.: Clebsch-Gordan coefficients for scattering tensors in ZnO and other wurtzite semiconductors, physica status solidi (b) 247, 1802–1806 (2010).

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Kunert, H. W., Machatine, A. G. J., Malherbe, J. B., Barnas, J., Hoffmann, A. and Wagner, M. R.: Elementary excitations in Si, Ge, and diamond time reversal affected, Thin Solid Films 517, 372–375 (2008).

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Kunert, H. W., Machatine, A. G. J., Malherbe, J. B., Barnas, J., Hoffmann, A. and Wagner, M. R.: Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure, Thin Solid Films 517, 134–136 (2008).

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Kunert, H., Machatine, A. and Hoffmann, A.: Phonons in sapphire Al2O3 substrate for ZnO and GaN, Materials Science and Engineering C 27, 1222 (2007).

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L

Lautenschlaeger, S., Eisermann, S., Meyer, B. K., Callison, G., Wagner, M. R. and Hoffmann, A.: Nitrogen incorporation in homoepitaxial ZnO CVD epilayers, physica status solidi (RRL) - Rapid Research Letters 3, 16–18 (2009).

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Lautenschlaeger, S., Sann, J., Volbers, N., Meyer, B. K., Hoffmann, A., Haboeck, U. and Wagner, M. R.: Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films, Physical Review B 77, 144108 (2008).

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Lautenschlaeger, S., Eisermann, S., Haas, G., Zolnowski, E. A., Hofmann, M. N., Laufer, A., Pinnisch, M., Meyer, B. K., Wagner, M. R., Reparaz, J. S., Callsen, G., Hoffmann, A., Chernikov, A., Chatterjee, S., Bornwasser, V. and Koch, M.: Optical signatures of nitrogen acceptors in ZnO, Physical Review B 85, 235204 (2012).

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Lehr, D., Wagner, M. R., Flock, J., Reparaz, J. S., Sotomayor Torres, C. M., Klaiber, A., Dekorsy, T. and Polarz, S.: A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials, Beilstein Journal of Nanotechnology 6, 2161–2172 (2015).

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Lizandara-Pueyo, C., Siroky, S., Wagner, M. R., Hoffmann, A., Reparaz, J. S., Lehmann, M. and Polarz, S.: Shape Anisotropy Influencing Functional Properties: Trigonal Prismatic ZnO Nanoparticles as an Example, Advanced Functional Materials 21, 295–304 (2011).

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Lizandara-Pueyo, C., Dilger, S., Wagner, M. R., Gerigk, M., Hoffmann, A. and Polarz, S.: Li-doped ZnO nanorods with single-crystal quality – non-classical crystallization and self-assembly into mesoporous materials, CrystEngComm 16, 1525–1531 (2014).

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M

Machatine, A. G. J., Kunert, H. W., Hoffmann, A., Malherbe, J. B., Barnas, J., Seguin, R., Wagner, M. R., Niyongabo, P. and Nephale, N.: Phonons and electronic states of ZnO, Al2O3 and Ge in the presence of time reversal symmetry, Journal of Physics: Conference Series 92, 012071 (2007).

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Meyer, B. K., Sann, J., Eisermann, S., Lautenschlaeger, S., Wagner, M. R., Kaiser, M., Callsen, G., Reparaz, J. S. and Hoffmann, A.: Excited state properties of donor bound excitons in ZnO, Physical Review B 82, 115207 (2010).

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Meyer, B. K., Sann, J., Lautenschlaeger, S., Wagner, M. R. and Hoffmann, A.: Ionized and neutral donor-bound excitons in ZnO, Physical Review B 76, 184120 (2007).

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