TU Berlin

Arbeitsgruppe Prof. Dr. M. KneisslPublikationen 2018 - 2020

Inhalt des Dokuments

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2020

  1. S. Walde, S. Hagedorn, P.-M. Coulon, A. Mogilatenko, C. Netzel, J. Weinrich, N. Susilo, E. Ziffer, L. Matiwe, C. Hartmann, G. Kusch, A. Alasmari, G. Naresh-Kumar, C. Trager-Cowan, T. Wernicke, T. Straubinger, M. Bickermann, R. W. Martin, P. A. Shields, M. Kneissl, and M. Weyers, "AlN overgrowth of nano-pillar-patterned sapphire with different offcut angleby metalorganic vapor phase epitaxy",
    Journal of Crystal Growth 531, 125343 (2020)
  2. Sylvia Hagedorn, Sebastian Walde, Norman Susilo, Carsten Netzel, Nadine Tillner, Ralph-Stephan Unger, Phillip Manley, Eviathar Ziffer, Tim Wernicke, Christiane Becker, Hans-Jürgen Lugauer, Michael Kneissl, and Markus Weyers, "Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes",
    Phys. Status Solidi A 217, 1900796 (2020).
  3. Fan Ren, Kailash C. Mishra, Hiroshi Amano, John Collins, Jung Han, Won Bin Im, Michael Kneissl, Tae-Yeon Seong, Anant Setlur, Tadek Suski, and Eugeniusz Zych, "Preface—JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki",
    ECS J. Solid State Sci. Technol. 9, 010001 (2020).
  4. Ho-Young Kim, Jong Woo Lee, Young Min Moon, Jeong Tak Oh, Hwan-Hee Jeong, June-O Song, Tae-Yeon Seong, Michael Kneissl, Hiroshi Amano, "Improvement in the reliability of AlGaInP-based light-emitting diode package using optimal silicone and leadframe structure",
    ECS Journal of Solid State Science and Technology 9(1), 015014 (2020).
  5. Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn, Leonardo Cancellara, Carsten Netzel, Neysha Lobo Ploch, Shaojun Wu, Jens Rass, Sebastian Walde, Luca Sulmoni, Martin Guttmann, Tim Wernicke, Martin Albrecht, Markus Weyers, and Michael Kneissl, "Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire",
    Photonics Research 8, 589 (2020).
  6. Tim Wernicke, Luca Sulmoni, Christian Kuhn, Günther Tränkle, Markus Weyers, Michael Kneissl, "Group III-nitride-based UV laser diodes", in M. Kneissl, A. Knorr, S. Reitzenstein, A. Hoffmann (eds), "Semiconductor Nanophotonics",
    Springer Series in Solid-State Sciences, vol 194, Springer, Cham (2020).
  7. Michael Kneissl, "A Short Introduction to Semiconductor Nanophotonics", in M. Kneissl, A. Knorr, S. Reitzenstein, A. Hoffmann (eds), "Semiconductor Nanophotonics",
    Springer Series in Solid-State Sciences, vol 194, Springer, Cham (2020).
  8. Stefan Freytag, Michael Winkler, Rüdiger Goldhahn, Tim Wernicke, Monir Rychetsky, Ingrid L. Koslow, Michael Kneissl, Duc V. Dinh, Brian Corbett, Peter J. Parbrook, and Martin Feneberg, "Polarization fields in semipolar (20-2-1) and (20-21) InGaN light emitting diodes",
    Appl. Phys. Lett. 116, 062106 (2020).
  9. Michael A. Bergmann, Johannes Enslin, Filip Hjort, Tim Wernicke, Michael Kneissl, and Åsa Haglund, "Thin-film flip-chip UVB LEDs realized by electrochemical etching",
    Appl. Phys. Lett. 116, 121101 (2020).
  10. C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, G. Ferenczi, B. Hourahine, A. Kotzai, S. Kraeusel, G. Kusch, R. W. Martin, R. McDermott, G. Naresh-Kumar, M. Nouf-Allehiani, E. Pascal, D. Thomson, S. Vespucci, M. D. Smith, P. J. Parbrook, J. Enslin, F. Mehnke, C. Kuhn, T. Wernicke, M. Kneissl, S. Hagedorn, A. Knauer, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, J. Bai, Y. Gong, L. Jiu, Y. Zhang, R. M. Smith, T. Wang and A. Winkelmann, "Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope",
    Semicond. Sci. Technol. 35, 054001 (2020).
  11. Sylvia Hagedorn, Sebastian Walde, Arne Knauer, Norman Susilo, Daniel Pacak, Leonardo Cancellara, Carsten Netzel, Anna Mogilatenko, Carsten Hartmann, Tim Wernicke, Michael Kneissl, Markus Weyers, "Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes",
    Phys. Status Solidi A, 190122 (2020).
  12. Ji Hye Kang, Hans Wenzel, Erik Freier, Veit Hoffmann, Olaf Brox, Jörg Fricke, Luca Sulmoni, Mathias Matalla, Christoph Stölmacker, Michael Kneissl, Markus Weyers, and Sven Einfeldt, "Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings",
    Optics Letters 45(4), 935 (2020).
  13. Hyun Kyong Cho, Norman Susilo, Martin Guttmann, Jens Rass, Ina Ostermay, Sylvia Hagedorn, Eviathar Ziffer, Tim Wernicke, Sven Einfeldt, Markus Weyers, Michael Kneissl, "Enhanced wall plug efficiency of AlGaN- based deep-UV LEDs using Mo/Al as p-contact",
    IEEE Photonics Technology Letters 32(14), 891 (2020).
  14. H.K. Cho, J.H. Kang, L. Sulmoni, K. Kunkel, J. Rass , N. Susilo, T. Wernicke, S. Einfeldt, M. Kneissl, "Low resistance n-contacts for UVC LEDs by a two-step plasma etching process",
    Semiconductor Science & Technology 35(9), 095019 (2020).
  15. Bernd Witzigmann, Friedhard Römer, Martin Martens, Christian Kuhn, Tim Wernicke, and Michael Kneissl, "Calculation of optical gain in AlGaN quantum wells for ultraviolet emission",
    AIP Advances 10, 095307 (2020).
  16. L. Sulmoni, F. Mehnke, A. Mogilatenko, M. Guttmann, T. Wernicke, M. Weyers, and M. Kneissl, "Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers",
    Photonics Research 8, 1381 (2020).
  17. I. Prozheev, F. Mehnke, T. Wernicke, M. Kneissl, F. Tuomisto, "Electrical compensation and cation vacancies in Al rich Si-doped AlGaN",
    Appl. Phys. Lett. 117, 142103 (2020).
  18. H. Amano, R. Collazo, C. De Santi, S. Einfeldt, M. Funato, J. Glaab, S. Hagedorn, A. Hirano, H. Hirayama, R. Ishii, Y. Kashima, Y. Kawakami, R. Kirste, M. Kneissl, R. Martin, F. Mehnke, M. Meneghini, A. Ougazzaden, P. J. Parbrook, S. Rajan, P. Reddy, F. Römer, J. Ruschel, B. Sarkar, F. Scholz, L. J. Schowalter, P. Shields, Z. Sitar, L. Sulmoni, T. Wang, T. Wernicke, M. Weyers, B. Witzigmann, Y.-R. Wu, T. Wunderer and Y. Zhang, "The 2020 UV emitter roadmap",
    Journal of Physics D: Applied Physics 53, 503001 (2020).
  19. Neysha Lobo-Ploch, Frank Mehnke, Luca Sulmoni, Hyun Kyong Cho, Martin Guttmann, Johannes Glaab, Katrin Hilbrich, Tim Wernicke, Sven Einfeldt, Michael Kneissl, "Milliwatt power 232 nm AlGaN-based deep UV LEDs on sapphire substrates",
    Appl. Phys. Lett. 117, 111102 (2020).
  20. A. Muhin, M. Guttmann, C. Kuhn, E. Mickein, J. R. Aparici, E. Ziffer, N. Susilo, L. Sulmoni, T. Wernicke and M. Kneissl, "Vertical conductivity and Poole-Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction",
    Appl. Phys. Lett. 117, 252101 (2020).
  21. Filip Hjort, Johannes Enslin, Munise Cobet, Michael A. Bergmann, Johan Gustavsson, Tim Kolbe, Arne Knauer, Felix Nippert, Ines Häusler, Markus R. Wagner, Tim Wernicke, Michael Kneissl, and Åsa Haglund, "A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser",
    ACS Photonics (2020).
  22. Erik Freier, Johannes Glaab, Jan Ruschel, Veit Hoffmann, Ji-Hye Kang, Maria Norman-Reiner, Hans Wenzel, Michael Kneissl, Sven Einfeldt, "Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device operating voltage",
    Journal of Physics D: Applied Physics (2020).
  23. Jan Ruschel, Johannes Glaab, Norman Susilo, Sylvia Hagedorn, Sebastian Walde, Eviathar Ziffer, Hyun Kyong Cho, Neysha Lobo Ploch, Tim Wernicke, Markus Weyers, Sven Einfeldt, Michael Kneissl, "Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities",
    Appl. Phys. Lett. 117, 241104 (2020).
  24. Humberto M. Foronda, Daniel A. Hunter, Mike Pietsch, Luca Sulmoni, Anton Muhin, Sarina Graupeter, Norman Susilo, Johannes Enslin, Klaus Irmscher, Robert W. Martin, Tim Wernicke, Michael Kneissl, "Electrical properties of (11-22) AlGaN:Si layers at high Al contents grown by metal-organic vapor phase epitaxy",
    Appl. Phys. Lett. 117, 221101 (2020).

2019

  1. Frank Mehnke, Luca Sulmoni, Martin Guttmann, Tim Wernicke, and Michael Kneissl, "Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 nm and 217 nm",
    Applied Physics Express 12, 012008 (2019).
  2. Michael Kneissl, Tae-Yeon Seong, Jung Han, Hiroshi Amano, "The emergence and prospects of deep ultraviolet light emitting diode technologies",
    Nature Photonics 13, 233 (2019).
  3. J. Glaab, J. Ruschel, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, N. Lobo Ploch, S. Kreutzmann, S. Einfeldt, M. Weyers, M. Kneissl, "Degradation of (In) AlGaN-based UVB LEDs and migration of hydrogen",
    IEEE Photonics Technology Letters 31(7), 529 (2019).
  4. Friedhard Römer, Bernd Witzigmann, Martin Guttmann, Norman Susilo, Tim Wernicke, Michael Kneissl, "Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes",
    Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120D (2019).
  5. Johannes Enslin, Tim Wernicke, Anna Lobanova, Gunnar Kusch, Lucia Spasevski, Tolga Teke, Nettina Belde, Robert W. Martin, Roman Talalaev, Michael Kneissl, "Indium incorporation in quaternary InxAlyGa1-x-yN for UVB-LEDs",
    Japanese Journal of Applied Physics 58, SC1004 (2019).
  6. Gunnar Kusch, Johannes Enslin, Lucia Spasevski, Tolga Teke, Tim Wernicke, Paul R. Edwards, Michael Kneissl, Robert W. Martin, "Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN",
    Japanese Journal of Applied Physics 58, SCCB18 (2019). OPEN ACCESS
  7. Norman Susilo, Marcel Schilling, Michael Narodovitch, Hsin-Hung Yao, Xiaohang Li, Bernd Witzigmann, Johannes Enslin, Martin Guttmann, Georgios G. Roumeliotis, Monir Rychetsky, Ingrid Koslow, Tim Wernicke, Tore Niermann, Michael Lehmann, Michael Kneissl, "Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements",
    Japanese Journal of Applied Physics 58, SCCB08 (2019). OPEN ACCESS
  8. Christian Kuhn, Martin Guttmann, Luca Sulmoni, Johannes Glaab, Norman Susilo, Tim Wernicke, Markus Weyers, and Michael Kneissl, "MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs".
    Photonics Research 7, B7 (2019). OPEN ACCESS
  9. Martin Guttmann, Frank Mehnke, Bettina Belde, Fynn Wolf, Christoph Reich, Luca Sulmoni, Tim Wernicke, and Michael Kneissl, "Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm",
    Japanese Journal of Applied Physics 58, SCCB20 (2019). OPEN ACCESS
  10. Humberto Foronda, Sarina Graupeter, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, "Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates",
    Japanese Journal of Applied Physics 58, SC1026 (2019). OPEN ACCESS
  11. Desiree Monti,  Carlo De Santi, Silvia Da Ruos, Francesco Piva, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, "High-Current Stress of UV-B (In)AlGaN-based LEDs: defect-generation and diffusion processes",
    IEEE Transactions on Electron Devices 66, 3387 (2019).
  12. Martin Guttmann, Jakob Höpfner, Christoph Reich, Luca Sulmoni, Christian Kuhn, Pascal Röder, Tim Wernicke, and Michael Kneissl, "Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes",
    Semicond. Sci. Technol. 34, 085007 (2019).
  13. C. Trager-Cowan, A.A. Alasamari, W. Avis, J. Bruckbauer, P.R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P.J. Parbrook, M.D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, A. Knauer, V. Kueller, S. Hagedorn, S. Walde, M. Weyers, P.M. Coulon, P.A. Shields, Y. Zhang, L. Jiu, Y.P. Gong, T. Wang, A. Winkelmann, "Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films",
    Photonics Research 7 (11), B73 (2019). OPEN ACCESS
  14. Tim Kolbe, Arne Knauer, Johannes Enslin, Sylvia Hagedorn, Anna Mogilatenko, Tim Wernicke, Michael Kneissl, Markus Weyers, "Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes",
    Journal of Crystal Growth 526, 125241 (2019).
  15. Daesung Kang, Jeong-Tak Oh, June O Song, Tae-Yeon Seong, Michael Kneissl, Hiroshi Amano, "Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application",
    Applied Physics Express 12, 102016 (2019).
  16. Da-Hoon Lee, Daesung Kang, Tae-Yeon Seong, Michael Kneissl, and Hiroshi Amano, "Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode",
    J. Phys. D: Appl. Phys. 53, 045106 (2019)
  17. Michael A Bergmann, Johannes Enslin, Rinat Yapparov, Filip Hjort, Björn Wickman, Saulius Marcinkevičius, Tim Wernicke, Michael Kneissl, Åsa Haglund, "Electrochemical etching of AlGaN for the realization of thin-film devices",
    Appl. Phys. Lett. 115, 182103 (2019)
  18. Pierre-Marie Coulon, Benjamin Damilano, Blandine Alloing, Pierre Chausse, Sebastian Walde, Johannes Enslin, Robert Armstrong, Stéphane Vézian, Sylvia Hagedorn, Tim Wernicke, Jean Massies, Jesus Zúñiga‐Pérez, Markus Weyers, Michael Kneissl, and Philip Shields, "Displacement Talbot Lithography for nano-engineering of III-nitride materials",
    Microsystems & Nanoengineering (2019)
  19. Jan Ruschel, Johannes Glaab, Batoul Beidoun, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt, Michael Kneissl, "Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes",
    Photonics Research 7 (7), B36 (2019). OPEN ACCESS
  20. Johannes Enslin, Arne Knauer, Anna Mogilatenko, Frank Mehnke, Martin Martens, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, "Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers",
    Physica Status Solidi (a) 216, 1900682 (2019). OPEN ACCESS

2018

  1. J.H. Kang, H. Wenzel, V. Hoffmann, L. Sulmoni, W. John, S. Einfeldt, T. Wernicke, M. Kneissl, DFB laser diodes based on GaN using 10th order laterally coupled surface gratings, IEEE Photonics Technology Letters 30, 231 (2018)
  2. Norman Susilo, Sylvia Hagedorn, Dominik Jaeger, Hideto Miyake, Ute Zeimer, Christoph Reich, Bettina Neuschulz, Luca Sulmoni, Martin Guttmann, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, and Michael Kneissl, AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire, Applied Physics Letters 112 (4), 041110 (2018)
  3. Christian Mounir, Ingrid Koslow, Tim Wernicke, Michael Kneissl, Leah Kuritzky, Nicholas Adamski, Sang Ho Oh, Christopher Pynn, Steven DenBaars, Shuji Nakamura, James Speck, Ulrich Schwarz, On the optical polarization properties of semipolar (20-21) and (20-2-1) InGaN/GaN quantum wells, Journal of Applied Physics 123 (8), 085705 (2018).
  4. Joerg Jeschke, Martin Martens, Sylvia Hagedorn, Arne Knauer, Anna Mogilatenko, Hans Wenzel, Ute Zeimer, Johannes Enslin, Tim Wernicke, Michael Kneissl, Markus Weyers, Influence of template properties and quantum well thickness on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells, Semiconductor Science and Technology 33 (3), 035015 (2018).
  5. JH Kang, H Wenzel, V Hoffmann, E Freier, L Sulmoni, S Einfeldt, T Wernicke, M Kneissl, R-S Unger, 10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings, SPIE Proc. Vol. 10553, 105530A (2018).
  6. D Monti, M Meneghini, C De Santi, S Da Ruos, G Meneghesso, E Zanoni, J Glaab, J Rass, S Einfeldt, F Mehnke, J Enslin, T Wernicke, M Kneissl, Defect-generation and diffusion in (In) AlGaN-based UV-B LEDs submitted to constant current stress, SPIE Proc. Vol. 10554, 1055410 (2018).
  7. Johannes Glaab, Joscha Haefke, Jan Ruschel, Moritz Brendel, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt, Christian Kuhn, Johannes Enslin, Martin Guttmann, Tim Wernicke, Michael Kneissl, Degradation effects of the active region in UV-C light-emitting diodes, Journal of Applied Physics 123, 104502 (2018)
  8. C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, M. Kneissl, MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices UVC Laser cladding layers, Phys. Status Solidi A 2018, 215, 1800005 (2018).
  9. C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, M. Kneissl, MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices UVC Laser cladding layers, Phys. Status Solidi A 2018, 215, 1870032. (Cover Picture
  10. Felix Nippert, Mohammad Tollabi Mazraehno, Matthew Davies, Marc Hoffmann, Hans-Jürgen Lugauer, Thomas Kure, Michael Kneissl, Axel Hoffmann, and Markus Wagner, Auger recombination in AlGaN quantum wells for UV light-emitting diodes, Applied Physics Letters 113, 071107 (2018).
  11. Johannes Glaab, Jan Ruschel, Frank Mehnke, Mickael Lapeyrade, Martin Guttmann, Tim Wernicke, Markus Weyers, Sven Einfeldt, Michael Kneissl, Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes, Semiconductor Science and Technology 33 (9), 095017 (2018).
  12. Christian Kuhn, Martin Martens, Frank Mehnke, Johannes Enslin, Peter Schneider, Christoph Reich, Felix Krueger, Jens Rass, Jae Bum Park, Viola Kueller, Arne Knauer, Tim Wernicke, Markus Weyers, Michael Kneissl, Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics,Journal of Physics D: Applied Physics 51 (2018) 415101, DOI:10.1088/1361-6463/aadb84
  13. H. K. Cho, A. Külberg, N. Lobo Ploch, J. Rass, J. Ruschel, T. Kolbe, A. Knauer, A. Braun, O. Krüger, S. Einfeldt, M. Weyers, M. Kneissl, Bow reduction of AlInGaN-based deep-ultraviolet LED wafers using focused laser patterning, IEEE Photonics Technology Letters (2018),  DOI: 10.1109/LPT.2018.2869218
  14. Jan Ruschel, Johannes Glaab, Moritz Brendel, Jens Rass, Christoph Stölmacker, Neysha Lobo Ploch, Tim Kolbe, Tim Wernicke, Frank Mehnke, Johannes Enslin, Sven Einfeldt, Markus Weyers, and Michael Kneissl, Localization of current induced degradation effects in (InAlGa)N-based UV-B LEDs, submitted to Journal of Applied Physics 124 (8), 084504 (2018).
  15. Norman Susilo, Georgios Roumeliotis, Michael Narodovitch, Bernd Witzigmann, Monir Rychetsky, Silvio Neugebauer, Martin Guttmann, Johannes Enslin, Armin Dadgar, Tore Niermann, Tim Wernicke, Andre Strittmatter, Michael Lehmann, Dimitra Papadimitriou, and Michael Kneissl, Accurate determination of polarization fields in (0001) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements, J. Phys. D: Appl. Phys. 51, 485103 (2018).

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