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Inhalt des Dokuments

Publikationen 2019

  1. Frank Mehnke, Luca Sulmoni, Martin Guttmann, Tim Wernicke, and Michael Kneissl, "Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 nm and 217 nm",
    Applied Physics Express 12, 012008 (2019).
  2. Michael Kneissl, Tae-Yeon Seong, Jung Han, Hiroshi Amano, "The emergence and prospects of deep ultraviolet light emitting diode technologies",
    Nature Photonics 13, 233 (2019).
  3. J. Glaab, J. Ruschel, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, N. Lobo Ploch, S. Kreutzmann, S. Einfeldt, M. Weyers, M. Kneissl, "Degradation of (In) AlGaN-based UVB LEDs and migration of hydrogen",
    IEEE Photonics Technology Letters 31(7), 529 (2019).
  4. Friedhard Römer, Bernd Witzigmann, Martin Guttmann, Norman Susilo, Tim Wernicke, Michael Kneissl, "Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes",
    Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120D (2019).
  5. Johannes Enslin, Tim Wernicke, Anna Lobanova, Gunnar Kusch, Lucia Spasevski, Tolga Teke, Nettina Belde, Robert W. Martin, Roman Talalaev, Michael Kneissl, "Indium incorporation in quaternary InxAlyGa1-x-yN for UVB-LEDs",
    Japanese Journal of Applied Physics 58, SC1004 (2019).
  6. Gunnar Kusch, Johannes Enslin, Lucia Spasevski, Tolga Teke, Tim Wernicke, Paul R. Edwards, Michael Kneissl, Robert W. Martin, "Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN",
    Japanese Journal of Applied Physics 58, SCCB18 (2019). OPEN ACCESS
  7. Norman Susilo, Marcel Schilling, Michael Narodovitch, Hsin-Hung Yao, Xiaohang Li, Bernd Witzigmann, Johannes Enslin, Martin Guttmann, Georgios G. Roumeliotis, Monir Rychetsky, Ingrid Koslow, Tim Wernicke, Tore Niermann, Michael Lehmann, Michael Kneissl, "Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements",
    Japanese Journal of Applied Physics 58, SCCB08 (2019). OPEN ACCESS
  8. Christian Kuhn, Martin Guttmann, Luca Sulmoni, Johannes Glaab, Norman Susilo, Tim Wernicke, Markus Weyers, and Michael Kneissl, "MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs".
    Photonics Research 7, B7 (2019). OPEN ACCESS
  9. Martin Guttmann, Frank Mehnke, Bettina Belde, Fynn Wolf, Christoph Reich, Luca Sulmoni, Tim Wernicke, and Michael Kneissl, "Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm",
    Japanese Journal of Applied Physics 58, SCCB20 (2019). OPEN ACCESS
  10. Humberto Foronda, Sarina Graupeter, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, "Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates",
    Japanese Journal of Applied Physics 58, SC1026 (2019). OPEN ACCESS
  11. Desiree Monti,  Carlo De Santi, Silvia Da Ruos, Francesco Piva, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, "High-Current Stress of UV-B (In)AlGaN-based LEDs: defect-generation and diffusion processes",
    IEEE Transactions on Electron Devices 66, 3387 (2019).
  12. Martin Guttmann, Jakob Höpfner, Christoph Reich, Luca Sulmoni, Christian Kuhn, Pascal Röder, Tim Wernicke, and Michael Kneissl, "Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes",
    Semicond. Sci. Technol. 34, 085007 (2019).
  13. C. Trager-Cowan, A.A. Alasamari, W. Avis, J. Bruckbauer, P.R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P.J. Parbrook, M.D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, A. Knauer, V. Kueller, S. Hagedorn, S. Walde, M. Weyers, P.M. Coulon, P.A. Shields, Y. Zhang, L. Jiu, Y.P. Gong, T. Wang, A. Winkelmann, "Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films",
    Photonics Research 7 (11), B73 (2019). OPEN ACCESS
  14. Tim Kolbe, Arne Knauer, Johannes Enslin, Sylvia Hagedorn, Anna Mogilatenko, Tim Wernicke, Michael Kneissl, Markus Weyers, "Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes",
    Journal of Crystal Growth 526, 125241 (2019).
  15. Daesung Kang, Jeong-Tak Oh, June O Song, Tae-Yeon Seong, Michael Kneissl, Hiroshi Amano, "Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application",
    Applied Physics Express 12, 102016 (2019).
  16. Da-Hoon Lee, Daesung Kang, Tae-Yeon Seong, Michael Kneissl, and Hiroshi Amano, "Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode",
    J. Phys. D: Appl. Phys. 53, 045106 (2019)
  17. Michael A Bergmann, Johannes Enslin, Rinat Yapparov, Filip Hjort, Björn Wickman, Saulius Marcinkevičius, Tim Wernicke, Michael Kneissl, Åsa Haglund, "Electrochemical etching of AlGaN for the realization of thin-film devices",
    Appl. Phys. Lett. 115, 182103 (2019)
  18. Pierre-Marie Coulon, Benjamin Damilano, Blandine Alloing, Pierre Chausse, Sebastian Walde, Johannes Enslin, Robert Armstrong, Stéphane Vézian, Sylvia Hagedorn, Tim Wernicke, Jean Massies, Jesus Zúñiga‐Pérez, Markus Weyers, Michael Kneissl, and Philip Shields, "Displacement Talbot Lithography for nano-engineering of III-nitride materials",
    Microsystems & Nanoengineering (2019)
  19. Jan Ruschel, Johannes Glaab, Batoul Beidoun, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt, Michael Kneissl, "Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes",
    Photonics Research 7 (7), B36 (2019). OPEN ACCESS
  20. Johannes Enslin, Arne Knauer, Anna Mogilatenko, Frank Mehnke, Martin Martens, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, "Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers",
    Physica Status Solidi (a) 216, 1900682 (2019). OPEN ACCESS

Publikationen 2018

  1. J.H. Kang, H. Wenzel, V. Hoffmann, L. Sulmoni, W. John, S. Einfeldt, T. Wernicke, M. Kneissl, DFB laser diodes based on GaN using 10th order laterally coupled surface gratings, IEEE Photonics Technology Letters 30, 231 (2018)
  2. Norman Susilo, Sylvia Hagedorn, Dominik Jaeger, Hideto Miyake, Ute Zeimer, Christoph Reich, Bettina Neuschulz, Luca Sulmoni, Martin Guttmann, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, and Michael Kneissl, AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire, Applied Physics Letters 112 (4), 041110 (2018)
  3. Christian Mounir, Ingrid Koslow, Tim Wernicke, Michael Kneissl, Leah Kuritzky, Nicholas Adamski, Sang Ho Oh, Christopher Pynn, Steven DenBaars, Shuji Nakamura, James Speck, Ulrich Schwarz, On the optical polarization properties of semipolar (20-21) and (20-2-1) InGaN/GaN quantum wells, Journal of Applied Physics 123 (8), 085705 (2018).
  4. Joerg Jeschke, Martin Martens, Sylvia Hagedorn, Arne Knauer, Anna Mogilatenko, Hans Wenzel, Ute Zeimer, Johannes Enslin, Tim Wernicke, Michael Kneissl, Markus Weyers, Influence of template properties and quantum well thickness on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells, Semiconductor Science and Technology 33 (3), 035015 (2018).
  5. JH Kang, H Wenzel, V Hoffmann, E Freier, L Sulmoni, S Einfeldt, T Wernicke, M Kneissl, R-S Unger, 10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings, SPIE Proc. Vol. 10553, 105530A (2018).
  6. D Monti, M Meneghini, C De Santi, S Da Ruos, G Meneghesso, E Zanoni, J Glaab, J Rass, S Einfeldt, F Mehnke, J Enslin, T Wernicke, M Kneissl, Defect-generation and diffusion in (In) AlGaN-based UV-B LEDs submitted to constant current stress, SPIE Proc. Vol. 10554, 1055410 (2018).
  7. Johannes Glaab, Joscha Haefke, Jan Ruschel, Moritz Brendel, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt, Christian Kuhn, Johannes Enslin, Martin Guttmann, Tim Wernicke, Michael Kneissl, Degradation effects of the active region in UV-C light-emitting diodes, Journal of Applied Physics 123, 104502 (2018)
  8. C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, M. Kneissl, MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices UVC Laser cladding layers, Phys. Status Solidi A 2018, 215, 1800005 (2018).
  9. C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, M. Kneissl, MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices UVC Laser cladding layers, Phys. Status Solidi A 2018, 215, 1870032. (Cover Picture
  10. Felix Nippert, Mohammad Tollabi Mazraehno, Matthew Davies, Marc Hoffmann, Hans-Jürgen Lugauer, Thomas Kure, Michael Kneissl, Axel Hoffmann, and Markus Wagner, Auger recombination in AlGaN quantum wells for UV light-emitting diodes, Applied Physics Letters 113, 071107 (2018).
  11. Johannes Glaab, Jan Ruschel, Frank Mehnke, Mickael Lapeyrade, Martin Guttmann, Tim Wernicke, Markus Weyers, Sven Einfeldt, Michael Kneissl, Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes, Semiconductor Science and Technology 33 (9), 095017 (2018).
  12. Christian Kuhn, Martin Martens, Frank Mehnke, Johannes Enslin, Peter Schneider, Christoph Reich, Felix Krueger, Jens Rass, Jae Bum Park, Viola Kueller, Arne Knauer, Tim Wernicke, Markus Weyers, Michael Kneissl, Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics,Journal of Physics D: Applied Physics 51 (2018) 415101, DOI:10.1088/1361-6463/aadb84
  13. H. K. Cho, A. Külberg, N. Lobo Ploch, J. Rass, J. Ruschel, T. Kolbe, A. Knauer, A. Braun, O. Krüger, S. Einfeldt, M. Weyers, M. Kneissl, Bow reduction of AlInGaN-based deep-ultraviolet LED wafers using focused laser patterning, IEEE Photonics Technology Letters (2018),  DOI: 10.1109/LPT.2018.2869218
  14. Jan Ruschel, Johannes Glaab, Moritz Brendel, Jens Rass, Christoph Stölmacker, Neysha Lobo Ploch, Tim Kolbe, Tim Wernicke, Frank Mehnke, Johannes Enslin, Sven Einfeldt, Markus Weyers, and Michael Kneissl, Localization of current induced degradation effects in (InAlGa)N-based UV-B LEDs, submitted to Journal of Applied Physics 124 (8), 084504 (2018).
  15. Norman Susilo, Georgios Roumeliotis, Michael Narodovitch, Bernd Witzigmann, Monir Rychetsky, Silvio Neugebauer, Martin Guttmann, Johannes Enslin, Armin Dadgar, Tore Niermann, Tim Wernicke, Andre Strittmatter, Michael Lehmann, Dimitra Papadimitriou, and Michael Kneissl, Accurate determination of polarization fields in (0001) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements, J. Phys. D: Appl. Phys. 51, 485103 (2018).

Publikationen 2017

  1. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017)
  2. Gunnar Kusch, Frank Mehnke, Johannes Enslin, Paul R. Edwards, Tim Wernicke, Michael Kneissl, and Robert W. Martin, Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy, Semiconductor Science & Technology, 32 (3), 035020 (2017)
  3. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Defect-Related Degradation of AlGaN-Based UV-B LEDs, IEEE Transactions on Electron Devices 64 (1), 200 (2017)
  4. J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo Ploch, T. Wernicke, M. Weyers, M. Kneissl, Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs, Journal of Crystal Growth 464, 185 (2017)
  5. Martin Martens, Christian Kuhn , Tino Simoneit , Sylvia Hagedorn , Arne Knauer , Tim Wernicke , Markus Weyers , Michael Kneissl, The effects of Magnesium doping on the modal loss in AlGaN-based deep UV lasers, Applied Physics Letters 110, 081103 (2017)
  6. Ji Hye Kang, Martin Martens, Hans Wenzel, Veit Hoffmann, Wilfred John, Sven Einfeldt, Tim Wernicke, Michael Kneissl, Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings, IEEE Photonics Technology Letters 29 (1), 138 (2017)
  7. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, Michael Kneissl, Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterization,  SPIE Proc. Vol. X, 101240T (2017)
  8. Mickael Lapeyrade, Johannes Glaab, Arne Knauer, Christian Kuhn, Johannes Enslin, Christoph Reich, Martin Guttmann, Frank Mehnke, Tim Wernicke, Sven Einfeldt, Markus Weyers, Michael Kneissl, Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern, Semiconductor Science and Technology 32 (4), 045019 (2017)
  9. Carlo De Santi, Matteo Meneghini, Desiree Monti, Johannes Glaab, Martin Guttmann, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs, Photonics Research 5 (2), A44 (2017).
  10. Markus Pristovsek, Konrad Bellman, Frank Mehnke, Joachim Stellmach, Tim Wernicke, Michael Kneissl, Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy, phys. status solidi B 254 (8), 1600711 (2017)
  11. Philipp Elmlinger, Martin Schreivogel, Simon Weida, Michael Kneissl, A Miniaturized UV-LED Based Optical Gas Sensor Utilizing Silica Waveguides for the Measurement of Nitrogen Dioxide and Sulphur Dioxide, MDPI Proceedings 2017, 1, 556 (2017), doi:10.3390/proceedings1040556
  12. Mickael Lapeyrade, Sabine Alamé, Johannes Glaab, Anna Mogilatenko, Ralph-Stephan Unger, Christian Kuhn, Tim Wernicke, Patrick Vogt, Arne Knauer, Ute Zeimer, Sven Einfeldt, Markus Weyers, Michael Kneissl, Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N, Journal of Applied Physics 122 (12), 125701 (2017)
  13. Hyun Kyong Cho, Olaf Krüger, Alexander Külberg, Jens Rass, Ute Zeimer, Tim Kolbe, Arne Knauer, Sven Einfeldt, Markus Weyers, Michael Kneissl, Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate, Semiconductor Science and Technology (2017), doi:10.1088/1361-6641/aa9402
  14. K. Bellmann, U.W. Pohl, C. Kuhn, T. Wernicke, and M. Kneissl, Controlling the morphology transition between step-flow growth and step-bunching growth, Journal of Crystal Growth 478, 187 (2017)
  15. Hyun Kyong Cho, Ina Ostermay, Ute Zeimer, Johannes Enslin, Sven Einfeldt, Markus Weyers, Michael Kneissl, Highly reflective p-contacts made of Pd-Al on deep ultraviolet light-emitting diodes, IEEE Photonics Technology Letters 29 (24), 2222 (2017)
  16. Tim Kolbe, Arne Knauer , Jens Rass , Hyun Kyong Cho, Sylvia Hagedorn, Sven Einfeldt, Michael Kneissl, Markus Weyers, Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes, Materials 10 (12),1396 (2017)
  17. Norman Susilo, Johannes Enslin, Luca Sulmoni, Martin Guttmann, Ute Zeimer, Tim Wernicke, Markus Weyers, Michael Kneissl, Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs, phys. stat. sol. (a), 1700643 (2017)
  18. J.H. Kang, H. Wenzel, V. Hoffmann, L. Sulmoni, W. John, S. Einfeldt, T. Wernicke, M. Kneissl, DFB laser diodes based on GaN using 10th order laterally coupled surface gratings, IEEE Photonics Technology Letters (2017), DOI: 10.1109/LPT.2017.2780446

Publikationen 2016

        1. T. Kolbe, J. Stellmach, F. Mehnke, M.-A. Rothe, V. Küller, A. Knauer, S. Einfeldt, T. Wernicke, M. Weyers and M. Kneissl, Efficient carrier-injection and electron-confinement in UV-B light emitting diodes, Phys. Stat. Sol. (a) 213, 210 (2016).
        2. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b) 253 (1), 93 (2016)
        3. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) 253 (1), 180 (2016).
        4. Monir Rychetsky, Ingrid Koslow, Baran Avinc, Jens Rass, Tim Wernicke, Konrad Bellmann, Luca Sulmoni, Veit Hoffmann, Markus Weyers, Johannes Wild, Josef Zweck, Bernd Witzigmann, Michael Kneissl, Determination of Polarization Fields in Group III-Nitride Heterostructures by Capacitance-Voltage-Measurements, Journal of Applied Physics 119 (9), 095713 (2016).
        5. Sabine Alamé, Andrea Navarro Quezada, Daria Skuridina, Christoph Reich, Dimitri Henning, Martin Frentrup, Tim Wernicke, Ingrid Koslow, Michael Kneissl, Norbert Esser, Patrick Vogt, Preparation and Structure of ultra-thin GaN (0001) Layers on  In0.11Ga0.89N-Single Quantum Wells, Materials Science in Semiconductor Processing (2016).
        6. Johannes Glaab, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Christoph Stoelmacker, Viola Kueller, Arne Knauer, Sven Einfeldt,  Markus Weyers, Michael Kneissl, Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs, Proc. of SPIE 9748, 97481O-1 (2016).
        7. A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Weyers and M. Kneissl, Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN, phys. stat. sol. (b) 253 (5), 809-813 (2016).
        8. M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes, Appl. Phys. Lett. 108, 151108 (2016).

        9. Albert Minj, Daria Skuridina, Daniela Cavalcoli, Ana Cros, Patrick Vogt, Michael Kneissl, Surface properties of AlInGaN/GaN heterostructures,  Materials Science in Semiconductor Processing (2016), doi:10.1016/j.mssp.2016.04.005

        10. Ji-Hye Kang, Olaf Krüger, Uwe Spengler, Ute Zeimer, Sven Einfeldt, Michael Kneissl, On the formation of cleaved mirror facets of GaN-based laser diodes – a comparative study of diamond tip edge-scribing and laser scribing, Journal of Vacuum Science & Technology B 34, 041222 (2016).
        11. Philipp Elmlinger, Martin Schreivogel, Marc Schmid, Myriam Kaiser, Roman Priester, Patrick Sonstroem,  Michael Kneissl, Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica, Proc. SPIE 9888, Micro-Optics 2016, 98880A (2016); doi:10.1117/12.2227518
        12. Christian Mounir and Ulrich T. Schwarz, Ingrid L. Koslow and Michael Kneissl, Tim Wernicke, Tilman Schimpke and Martin Strassburg, Impact of Inhomogeneous Broadening on the Optical Polarization of High-Inclination Semipolar and Nonpolar InxGa1−xN/GaN Quantum Wells, Phys. Rev. B 93, 235314 (2016).
        13. Duc V. Dinh, Brian Corbett, and Peter. J. Parbrook, Ingrid. L. Koslow, Monir Rychetsky, Martin Guttmann, Tim Wernicke, and Michael Kneissl, Christian Mounir, Ulrich Schwarz, Johannes Glaab, Carsten Netzel, Frank Brunner, and Markus Weyers, Role of substrate quality on the performance of semipolar (11-22) InGaN light-emitting diodes, Journal of Applied Physics 120, 135701 (2016).
        14. F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, Electronic properties of Si-doped AlxGa1-xN with aluminum mole fraction above 80%, Journal of Applied Physics 120, 145702 (2016).
        15. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017).
        16. Farsane Tabataba-Vakili, Thomas Wunderer, Michael Kneissl, Zhihong Yang, Mark Teepe, Max Batres, Martin Feneberg, Bernard Vancil, Noble M. Johnson, Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures, Appl. Phys. Lett. 109, 181105 (2016).


        Publikationen 2015

              1. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth 411, 106 (2015).
              2. T. Bruhn, B. Fimland, and P. Vogt, Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces, The Journal of Chemical Physics 142, 101903 (2015); doi: 10.1063/1.4906117.
              3. M. Lapeyrade, F. Eberspach, N. Lobo Ploch, C. Reich, M. Guttmann, T. Wernicke, F. Mehnke, S. Einfeldt, A. Knauer, M. Weyers, and M. Kneissl, Current spreading study in UV-C LED emitting around 235 nm, Proc. SPIE 9363, 93631P (2015), doi: 10.1117/12.2076349
              4. J. Rass, T. Kolbe, N. Lobo Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and Michael Kneissl, High power UV-B LEDs with long lifetime, Proc. SPIE 9363, 93631K (2015), doi: 10.1117/12.2077426
              5. M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, R. Goldhahn, Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire, Appl. Phys. Lett. 106, 182102 (2015)
              6. V. Hoffmann, A. Mogilatenko, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, In-situ observation of InGaN quantum well decomposition during growth of laser diodes,  Crystal Research & Technology No. 6, 499-503 (2015), DOI: 10.1002/crat.201500073
              7. D. Papadimitriou*, G. Roupakas, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel,  S. Alamé, P. Vogt, M. Kneissl , Quality CuInSe2 and Cu(In,Ga)Se2 Thin Films processed by Single-Step Electrochemical Deposition Techniques, Materials Research Express 2, 056402 (2015)
              8. F. Mehnke, C. Kuhn, J. Stellmach, T. Kolbe, N. Lobo-Ploch, J. Rass, M.-A. Rothe, C. Reich, N. Ledentsov Jr., M. Pristovsek, T. Wernicke, and M. Kneissl, Effect of heterostructure design on carrier injection and emission characteristics 295 nm light emitting diodes, Journal of Applied Physics 117, 195704 (2015).
              9. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stoelmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs, Mater. Res. Soc. Symp. Proc. Vol. 1792 (2015), DOI: 10.1557/opl.2015.446.
              10. A. Navarro-Quezada, Z. Galazka, S. Alamé, D. Skuridina, P.Vogt, N.Esser, Surface properties of annealed semiconductive β-Ga2O3 (100) single crystals for epitaxy, J. Appl. Phys. 349, 368–373 (2015)
              11. Joerg Jeschke, Martin Martens, Arne Knauer, Viola Kueller, Ute Zeimer, Carsten Netzel, Christian Kuhn, Felix Krueger, Christoph Reich, Tim Wernicke, Michael Kneissl, and Markus Weyers, UV-C lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates, IEEE Phot. Tech. Lett., Vol. 27 (18), 1969 (2015).
              12. Gunnar Kusch, M. Nouf-Allehiani, Frank Mehnke, Christian Kuhn, Paul Edwards, Tim Wernicke, Arne Knauer, Viola Kueller, Naresh Kumar Gunasekar, Markus Weyers, Michael Kneissl, Carol Trager-Cowan, and Robert Martin, Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N, Appl. Phys. Lett. 107, 072103 (2015).
              13. K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, Desorption induced GaN quantum dots on (0001) AlN by MOVPE, phys. stat. sol. RRL (DOI 10.1002/pssr.201510217)
              14. M. Kneissl, F. Mehnke, C. Kuhn, C. Reich, M. Guttmann, J. Enslin, T. Wernicke , A. Knauer, V. Kueller, U. Zeimer, M. Lapeyrade, J. Raß, N. Lobo-Ploch, T. Kolbe, J. Glaab, S. Einfeldt, M. Weyers, Deep Ultraviolet LEDs: from materials research to real-world applications, IEEE Summer Topical Meeting Series (SUM), 9-10 (2015)
              15. Li Xiao-Hang, T. Detchprohm, Liu Yuh-Shiuan, R.D. Dupuis, Kao Tsung-Ting , S. Haq, Shen Shyh-Chiang, K. Mehta, P.D. Yoder, Wei Shuo, Y.O. Wang, H. Xie, A.M. Fischer, F.A. Ponce, T. Wernicke, C. Reich, M. Martens, M.Kneissl, Optically pumped low-threshold UV lasers, IEEE Summer Topical Meeting Series (SUM), 119-120 (2015)
              16. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stölmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Degradation of (InAlGa)N-based UV-B LEDs stressed by current and temperature, submitted to J. Appl. Phys., Vol. 118 (9), 094504(2015).
              17. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b), (2015), DOI: 10.1002/pssb.201552274
              18. L. Schade, T.Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552419
              19. L. Redaelli, H. Wenzel, J. Piprek, T. Weig, S. Einfeldt, M. Martens, G. Lükens, U.T. Schwarz, and M. Kneissl, Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current dependent gain and index spectra and self-consistent simulation, IEEE Journal of Quantum Electronics, Vol. 51, 2000506 (2015).
              20. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552277
              21. M. Rychetsky, I. L. Koslow, T. Wernicke, J. Rass, V. Hoffmann, M. Weyers, and M. Kneissl, Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552407
              22. Christoph Reich, Martin Guttmann, Martin Feneberg, Tim Wernicke, Frank Mehnke, Christian Kuhn, Jens Rass, Mickael Lapeyrade, Sven Einfeldt, Arne Knauer, Viola Kueller, Markus Weyers, Rüdiger Goldhahn, and Michael Kneissl, „Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well LEDs“, Appl. Phys. Lett. 107, 142101 (2015)
              23. U. Zeimer, J. Jeschke, A. Mogilatenko, A. Knauer, V. Kueller, V. Hoffmann,  C. Kuhn, F. Krüger, M. Martens, M. Kneissl, M. Weyers, Spatial inhomogeneities in structural and optical properties of AlxGa1-xN quantum wells induced by surface morphology of AlN/sapphire templates, Semiconductor Science and Technology 30 (11), 14008 (2015)
              24. A. Mogilatenko, J. Enslin, A. Knauer, F. Mehnke, K. Bellmann, T. Wernicke, M. Weyers, M. Kneissl, V-pit to truncated pyramid transition in AlGaN-based heterostructures, Semiconductor Science and Technology 30 (11), 114010 (2015).
              25. A. Navarro-Quezada, S. Alamé, N. Esser, J. Furthmüller, F. Bechstedt, Z. Galazka, , D. Skuridina, and P.Vogt, Near valence-band electronic properties of semiconducting β-Ga2O3 (100) single crystals, Phys. Rev. B. 92, 195306 (2015).
              26. M. Kneissl, A brief review of III-Nitride UV emitter technologies and applications , M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 1-26, Cham, Heidelberg, New York, London: Springer (2015)
              27. J. Rass, N Lobo-Ploch, Optical polarization and light extraction from UV LEDs, M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 137-170, Cham, Heidelberg, New York, London: Springer (2015)

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