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Inhalt des Dokuments

2017

  1. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017)
  2. Gunnar Kusch, Frank Mehnke, Johannes Enslin, Paul R. Edwards, Tim Wernicke, Michael Kneissl, and Robert W. Martin, Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy, Semiconductor Science & Technology, 32 (3), 035020 (2017)
  3. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Defect-Related Degradation of AlGaN-Based UV-B LEDs, IEEE Transactions on Electron Devices 64 (1), 200 (2017)
  4. J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo Ploch, T. Wernicke, M. Weyers, M. Kneissl, Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs, Journal of Crystal Growth 464, 185 (2017)
  5. Martin Martens, Christian Kuhn , Tino Simoneit , Sylvia Hagedorn , Arne Knauer , Tim Wernicke , Markus Weyers , Michael Kneissl, The effects of Magnesium doping on the modal loss in AlGaN-based deep UV lasers, Applied Physics Letters 110, 081103 (2017)
  6. Ji Hye Kang, Martin Martens, Hans Wenzel, Veit Hoffmann, Wilfred John, Sven Einfeldt, Tim Wernicke, Michael Kneissl, Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings, IEEE Photonics Technology Letters 29 (1), 138 (2017)
  7. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Johannes Glaab, Jens Rass, Sven Einfeldt, Frank Mehnke, Tim Wernicke, Michael Kneissl, Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterization,  SPIE Proc. Vol. X, 101240T (2017)
  8. Mickael Lapeyrade, Johannes Glaab, Arne Knauer, Christian Kuhn, Johannes Enslin, Christoph Reich, Martin Guttmann, Frank Mehnke, Tim Wernicke, Sven Einfeldt, Markus Weyers, Michael Kneissl, Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern, Semiconductor Science and Technology 32 (4), 045019 (2017)
  9. Carlo De Santi, Matteo Meneghini, Desiree Monti, Johannes Glaab, Martin Guttmann, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs, Photonics Research 5 (2), A44 (2017).
  10. Markus Pristovsek, Konrad Bellman, Frank Mehnke, Joachim Stellmach, Tim Wernicke, Michael Kneissl, Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy, phys. status solidi B 254 (8), 1600711 (2017)
  11. Philipp Elmlinger, Martin Schreivogel, Simon Weida, Michael Kneissl, A Miniaturized UV-LED Based Optical Gas Sensor Utilizing Silica Waveguides for the Measurement of Nitrogen Dioxide and Sulphur Dioxide, MDPI Proceedings 2017, 1, 556 (2017), doi:10.3390/proceedings1040556
  12. Mickael Lapeyrade, Sabine Alamé, Johannes Glaab, Anna Mogilatenko, Ralph-Stephan Unger, Christian Kuhn, Tim Wernicke, Patrick Vogt, Arne Knauer, Ute Zeimer, Sven Einfeldt, Markus Weyers, Michael Kneissl, Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N, Journal of Applied Physics 122 (12), 125701 (2017)
  13. Hyun Kyong Cho, Olaf Krüger, Alexander Külberg, Jens Rass, Ute Zeimer, Tim Kolbe, Arne Knauer, Sven Einfeldt, Markus Weyers, Michael Kneissl, Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate, Semiconductor Science and Technology (2017), doi:10.1088/1361-6641/aa9402
  14. K. Bellmann, U.W. Pohl, C. Kuhn, T. Wernicke, and M. Kneissl, Controlling the morphology transition between step-flow growth and step-bunching growth, Journal of Crystal Growth 478, 187 (2017)
  15. Hyun Kyong Cho, Ina Ostermay, Ute Zeimer, Johannes Enslin, Sven Einfeldt, Markus Weyers, Michael Kneissl, Highly reflective p-contacts made of Pd-Al on deep ultraviolet light-emitting diodes, IEEE Photonics Technology Letters 29 (24), 2222 (2017)
  16. Tim Kolbe, Arne Knauer , Jens Rass , Hyun Kyong Cho, Sylvia Hagedorn, Sven Einfeldt, Michael Kneissl, Markus Weyers, Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes, Materials 10 (12),1396 (2017)
  17. Norman Susilo, Johannes Enslin, Luca Sulmoni, Martin Guttmann, Ute Zeimer, Tim Wernicke, Markus Weyers, Michael Kneissl, Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs, phys. stat. sol. (a), 1700643 (2017)
  18. J.H. Kang, H. Wenzel, V. Hoffmann, L. Sulmoni, W. John, S. Einfeldt, T. Wernicke, M. Kneissl, DFB laser diodes based on GaN using 10th order laterally coupled surface gratings, IEEE Photonics Technology Letters (2017), DOI: 10.1109/LPT.2017.2780446

Publications 2016

  1. T. Kolbe, J. Stellmach, F. Mehnke, M.-A. Rothe, V. Küller, A. Knauer, S. Einfeldt, T. Wernicke, M. Weyers and M. Kneissl, Efficient carrier-injection and electron-confinement in UV-B light emitting diodes, Phys. Stat. Sol. (a) 213, 210 (2016).
  2. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b) 253 (1), 93 (2016)
  3. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) 253 (1), 180 (2016).
  4. Monir Rychetsky, Ingrid Koslow, Baran Avinc, Jens Rass, Tim Wernicke, Konrad Bellmann, Luca Sulmoni, Veit Hoffmann, Markus Weyers, Johannes Wild, Josef Zweck, Bernd Witzigmann, Michael Kneissl, Determination of Polarization Fields in Group III-Nitride Heterostructures by Capacitance-Voltage-Measurements, Journal of Applied Physics 119 (9), 095713 (2016).
  5. Sabine Alamé, Andrea Navarro Quezada, Daria Skuridina, Christoph Reich, Dimitri Henning, Martin Frentrup, Tim Wernicke, Ingrid Koslow, Michael Kneissl, Norbert Esser, Patrick Vogt, Preparation and Structure of ultra-thin GaN (0001) Layers on  In0.11Ga0.89N-Single Quantum Wells, Materials Science in Semiconductor Processing (2016).
  6. Johannes Glaab, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Christoph Stoelmacker, Viola Kueller, Arne Knauer, Sven Einfeldt,  Markus Weyers, Michael Kneissl, Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs, Proc. of SPIE 9748, 97481O-1 (2016).
  7. A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Weyers and M. Kneissl, Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN, phys. stat. sol. (b) 253 (5), 809-813 (2016).
  8. M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes, Appl. Phys. Lett. 108, 151108 (2016).

  9. Albert Minj, Daria Skuridina, Daniela Cavalcoli, Ana Cros, Patrick Vogt, Michael Kneissl, Surface properties of AlInGaN/GaN heterostructures,  Materials Science in Semiconductor Processing (2016), doi:10.1016/j.mssp.2016.04.005

  10. Ji-Hye Kang, Olaf Krüger, Uwe Spengler, Ute Zeimer, Sven Einfeldt, Michael Kneissl, On the formation of cleaved mirror facets of GaN-based laser diodes – a comparative study of diamond tip edge-scribing and laser scribing, Journal of Vacuum Science & Technology B 34, 041222 (2016).
  11. Philipp Elmlinger, Martin Schreivogel, Marc Schmid, Myriam Kaiser, Roman Priester, Patrick Sonstroem,  Michael Kneissl, Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica, Proc. SPIE 9888, Micro-Optics 2016, 98880A (2016); doi:10.1117/12.2227518
  12. Christian Mounir and Ulrich T. Schwarz, Ingrid L. Koslow and Michael Kneissl, Tim Wernicke, Tilman Schimpke and Martin Strassburg, Impact of Inhomogeneous Broadening on the Optical Polarization of High-Inclination Semipolar and Nonpolar InxGa1−xN/GaN Quantum Wells, Phys. Rev. B 93, 235314 (2016).
  13. Duc V. Dinh, Brian Corbett, and Peter. J. Parbrook, Ingrid. L. Koslow, Monir Rychetsky, Martin Guttmann, Tim Wernicke, and Michael Kneissl, Christian Mounir, Ulrich Schwarz, Johannes Glaab, Carsten Netzel, Frank Brunner, and Markus Weyers, Role of substrate quality on the performance of semipolar (11-22) InGaN light-emitting diodes, Journal of Applied Physics 120, 135701 (2016).
  14. F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, Electronic properties of Si-doped AlxGa1-xN with aluminum mole fraction above 80%, Journal of Applied Physics 120, 145702 (2016).
  15. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017).
  16. Farsane Tabataba-Vakili, Thomas Wunderer, Michael Kneissl, Zhihong Yang, Mark Teepe, Max Batres, Martin Feneberg, Bernard Vancil, Noble M. Johnson, Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures, Appl. Phys. Lett. 109, 181105 (2016).

Publikationen 2016

        1. T. Kolbe, J. Stellmach, F. Mehnke, M.-A. Rothe, V. Küller, A. Knauer, S. Einfeldt, T. Wernicke, M. Weyers and M. Kneissl, Efficient carrier-injection and electron-confinement in UV-B light emitting diodes, Phys. Stat. Sol. (a) 213, 210 (2016).
        2. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b) 253 (1), 93 (2016)
        3. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) 253 (1), 180 (2016).
        4. Monir Rychetsky, Ingrid Koslow, Baran Avinc, Jens Rass, Tim Wernicke, Konrad Bellmann, Luca Sulmoni, Veit Hoffmann, Markus Weyers, Johannes Wild, Josef Zweck, Bernd Witzigmann, Michael Kneissl, Determination of Polarization Fields in Group III-Nitride Heterostructures by Capacitance-Voltage-Measurements, Journal of Applied Physics 119 (9), 095713 (2016).
        5. Sabine Alamé, Andrea Navarro Quezada, Daria Skuridina, Christoph Reich, Dimitri Henning, Martin Frentrup, Tim Wernicke, Ingrid Koslow, Michael Kneissl, Norbert Esser, Patrick Vogt, Preparation and Structure of ultra-thin GaN (0001) Layers on  In0.11Ga0.89N-Single Quantum Wells, Materials Science in Semiconductor Processing (2016).
        6. Johannes Glaab, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Christoph Stoelmacker, Viola Kueller, Arne Knauer, Sven Einfeldt,  Markus Weyers, Michael Kneissl, Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs, Proc. of SPIE 9748, 97481O-1 (2016).
        7. A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Weyers and M. Kneissl, Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN, phys. stat. sol. (b) 253 (5), 809-813 (2016).
        8. M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes, Appl. Phys. Lett. 108, 151108 (2016).

        9. Albert Minj, Daria Skuridina, Daniela Cavalcoli, Ana Cros, Patrick Vogt, Michael Kneissl, Surface properties of AlInGaN/GaN heterostructures,  Materials Science in Semiconductor Processing (2016), doi:10.1016/j.mssp.2016.04.005

        10. Ji-Hye Kang, Olaf Krüger, Uwe Spengler, Ute Zeimer, Sven Einfeldt, Michael Kneissl, On the formation of cleaved mirror facets of GaN-based laser diodes – a comparative study of diamond tip edge-scribing and laser scribing, Journal of Vacuum Science & Technology B 34, 041222 (2016).
        11. Philipp Elmlinger, Martin Schreivogel, Marc Schmid, Myriam Kaiser, Roman Priester, Patrick Sonstroem,  Michael Kneissl, Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica, Proc. SPIE 9888, Micro-Optics 2016, 98880A (2016); doi:10.1117/12.2227518
        12. Christian Mounir and Ulrich T. Schwarz, Ingrid L. Koslow and Michael Kneissl, Tim Wernicke, Tilman Schimpke and Martin Strassburg, Impact of Inhomogeneous Broadening on the Optical Polarization of High-Inclination Semipolar and Nonpolar InxGa1−xN/GaN Quantum Wells, Phys. Rev. B 93, 235314 (2016).
        13. Duc V. Dinh, Brian Corbett, and Peter. J. Parbrook, Ingrid. L. Koslow, Monir Rychetsky, Martin Guttmann, Tim Wernicke, and Michael Kneissl, Christian Mounir, Ulrich Schwarz, Johannes Glaab, Carsten Netzel, Frank Brunner, and Markus Weyers, Role of substrate quality on the performance of semipolar (11-22) InGaN light-emitting diodes, Journal of Applied Physics 120, 135701 (2016).
        14. F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, Electronic properties of Si-doped AlxGa1-xN with aluminum mole fraction above 80%, Journal of Applied Physics 120, 145702 (2016).
        15. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017).
        16. Farsane Tabataba-Vakili, Thomas Wunderer, Michael Kneissl, Zhihong Yang, Mark Teepe, Max Batres, Martin Feneberg, Bernard Vancil, Noble M. Johnson, Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures, Appl. Phys. Lett. 109, 181105 (2016).


        Publications 2015

        1. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth 411, 106 (2015).
        2. T. Bruhn, B. Fimland, and P. Vogt, Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces, The Journal of Chemical Physics 142, 101903 (2015); doi: 10.1063/1.4906117.
        3. M. Lapeyrade, F. Eberspach, N. Lobo Ploch, C. Reich, M. Guttmann, T. Wernicke, F. Mehnke, S. Einfeldt, A. Knauer, M. Weyers, and M. Kneissl, Current spreading study in UV-C LED emitting around 235 nm, Proc. SPIE 9363, 93631P (2015), doi: 10.1117/12.2076349
        4. J. Rass, T. Kolbe, N. Lobo Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and Michael Kneissl, High power UV-B LEDs with long lifetime, Proc. SPIE 9363, 93631K (2015), doi: 10.1117/12.2077426
        5. M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, R. Goldhahn, Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire, Appl. Phys. Lett. 106, 182102 (2015)
        6. V. Hoffmann, A. Mogilatenko, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, In-situ observation of InGaN quantum well decomposition during growth of laser diodes,  Crystal Research & Technology No. 6, 499-503 (2015), DOI: 10.1002/crat.201500073
        7. D. Papadimitriou*, G. Roupakas, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel,  S. Alamé, P. Vogt, M. Kneissl , Quality CuInSe2 and Cu(In,Ga)Se2 Thin Films processed by Single-Step Electrochemical Deposition Techniques, Materials Research Express 2, 056402 (2015)
        8. F. Mehnke, C. Kuhn, J. Stellmach, T. Kolbe, N. Lobo-Ploch, J. Rass, M.-A. Rothe, C. Reich, N. Ledentsov Jr., M. Pristovsek, T. Wernicke, and M. Kneissl, Effect of heterostructure design on carrier injection and emission characteristics 295 nm light emitting diodes, Journal of Applied Physics 117, 195704 (2015).
        9. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stoelmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs, Mater. Res. Soc. Symp. Proc. Vol. 1792 (2015), DOI: 10.1557/opl.2015.446.
        10. A. Navarro-Quezada, Z. Galazka, S. Alamé, D. Skuridina, P.Vogt, N.Esser, Surface properties of annealed semiconductive β-Ga2O3 (100) single crystals for epitaxy, J. Appl. Phys. 349, 368–373 (2015)
        11. Joerg Jeschke, Martin Martens, Arne Knauer, Viola Kueller, Ute Zeimer, Carsten Netzel, Christian Kuhn, Felix Krueger, Christoph Reich, Tim Wernicke, Michael Kneissl, and Markus Weyers, UV-C lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates, IEEE Phot. Tech. Lett., Vol. 27 (18), 1969 (2015).
        12. Gunnar Kusch, M. Nouf-Allehiani, Frank Mehnke, Christian Kuhn, Paul Edwards, Tim Wernicke, Arne Knauer, Viola Kueller, Naresh Kumar Gunasekar, Markus Weyers, Michael Kneissl, Carol Trager-Cowan, and Robert Martin, Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N, Appl. Phys. Lett. 107, 072103 (2015).
        13. K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, Desorption induced GaN quantum dots on (0001) AlN by MOVPE, phys. stat. sol. RRL (DOI 10.1002/pssr.201510217)
        14. M. Kneissl, F. Mehnke, C. Kuhn, C. Reich, M. Guttmann, J. Enslin, T. Wernicke , A. Knauer, V. Kueller, U. Zeimer, M. Lapeyrade, J. Raß, N. Lobo-Ploch, T. Kolbe, J. Glaab, S. Einfeldt, M. Weyers, Deep Ultraviolet LEDs: from materials research to real-world applications, IEEE Summer Topical Meeting Series (SUM), 9-10 (2015)
        15. Li Xiao-Hang, T. Detchprohm, Liu Yuh-Shiuan, R.D. Dupuis, Kao Tsung-Ting , S. Haq, Shen Shyh-Chiang, K. Mehta, P.D. Yoder, Wei Shuo, Y.O. Wang, H. Xie, A.M. Fischer, F.A. Ponce, T. Wernicke, C. Reich, M. Martens, M.Kneissl, Optically pumped low-threshold UV lasers, IEEE Summer Topical Meeting Series (SUM), 119-120 (2015)
        16. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stölmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Degradation of (InAlGa)N-based UV-B LEDs stressed by current and temperature, submitted to J. Appl. Phys., Vol. 118 (9), 094504(2015).
        17. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b), (2015), DOI: 10.1002/pssb.201552274
        18. L. Schade, T.Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552419
        19. L. Redaelli, H. Wenzel, J. Piprek, T. Weig, S. Einfeldt, M. Martens, G. Lükens, U.T. Schwarz, and M. Kneissl, Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current dependent gain and index spectra and self-consistent simulation, IEEE Journal of Quantum Electronics, Vol. 51, 2000506 (2015).
        20. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552277
        21. M. Rychetsky, I. L. Koslow, T. Wernicke, J. Rass, V. Hoffmann, M. Weyers, and M. Kneissl, Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552407
        22. Christoph Reich, Martin Guttmann, Martin Feneberg, Tim Wernicke, Frank Mehnke, Christian Kuhn, Jens Rass, Mickael Lapeyrade, Sven Einfeldt, Arne Knauer, Viola Kueller, Markus Weyers, Rüdiger Goldhahn, and Michael Kneissl, „Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well LEDs“, Appl. Phys. Lett. 107, 142101 (2015)
        23. U. Zeimer, J. Jeschke, A. Mogilatenko, A. Knauer, V. Kueller, V. Hoffmann,  C. Kuhn, F. Krüger, M. Martens, M. Kneissl, M. Weyers, Spatial inhomogeneities in structural and optical properties of AlxGa1-xN quantum wells induced by surface morphology of AlN/sapphire templates, Semiconductor Science and Technology 30 (11), 14008 (2015)
        24. A. Mogilatenko, J. Enslin, A. Knauer, F. Mehnke, K. Bellmann, T. Wernicke, M. Weyers, M. Kneissl, V-pit to truncated pyramid transition in AlGaN-based heterostructures, Semiconductor Science and Technology 30 (11), 114010 (2015).
        25. A. Navarro-Quezada, S. Alamé, N. Esser, J. Furthmüller, F. Bechstedt, Z. Galazka, , D. Skuridina, and P.Vogt, Near valence-band electronic properties of semiconducting β-Ga2O3 (100) single crystals, Phys. Rev. B. 92, 195306 (2015).
        26. M. Kneissl, A brief review of III-Nitride UV emitter technologies and applications , M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 1-26, Cham, Heidelberg, New York, London: Springer (2015)
        27. J. Rass, N Lobo-Ploch, Optical polarization and light extraction from UV LEDs, M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 137-170, Cham, Heidelberg, New York, London: Springer (2015)

        Publikationen 2015

              1. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth 411, 106 (2015).
              2. T. Bruhn, B. Fimland, and P. Vogt, Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces, The Journal of Chemical Physics 142, 101903 (2015); doi: 10.1063/1.4906117.
              3. M. Lapeyrade, F. Eberspach, N. Lobo Ploch, C. Reich, M. Guttmann, T. Wernicke, F. Mehnke, S. Einfeldt, A. Knauer, M. Weyers, and M. Kneissl, Current spreading study in UV-C LED emitting around 235 nm, Proc. SPIE 9363, 93631P (2015), doi: 10.1117/12.2076349
              4. J. Rass, T. Kolbe, N. Lobo Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and Michael Kneissl, High power UV-B LEDs with long lifetime, Proc. SPIE 9363, 93631K (2015), doi: 10.1117/12.2077426
              5. M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, R. Goldhahn, Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire, Appl. Phys. Lett. 106, 182102 (2015)
              6. V. Hoffmann, A. Mogilatenko, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, In-situ observation of InGaN quantum well decomposition during growth of laser diodes,  Crystal Research & Technology No. 6, 499-503 (2015), DOI: 10.1002/crat.201500073
              7. D. Papadimitriou*, G. Roupakas, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel,  S. Alamé, P. Vogt, M. Kneissl , Quality CuInSe2 and Cu(In,Ga)Se2 Thin Films processed by Single-Step Electrochemical Deposition Techniques, Materials Research Express 2, 056402 (2015)
              8. F. Mehnke, C. Kuhn, J. Stellmach, T. Kolbe, N. Lobo-Ploch, J. Rass, M.-A. Rothe, C. Reich, N. Ledentsov Jr., M. Pristovsek, T. Wernicke, and M. Kneissl, Effect of heterostructure design on carrier injection and emission characteristics 295 nm light emitting diodes, Journal of Applied Physics 117, 195704 (2015).
              9. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stoelmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs, Mater. Res. Soc. Symp. Proc. Vol. 1792 (2015), DOI: 10.1557/opl.2015.446.
              10. A. Navarro-Quezada, Z. Galazka, S. Alamé, D. Skuridina, P.Vogt, N.Esser, Surface properties of annealed semiconductive β-Ga2O3 (100) single crystals for epitaxy, J. Appl. Phys. 349, 368–373 (2015)
              11. Joerg Jeschke, Martin Martens, Arne Knauer, Viola Kueller, Ute Zeimer, Carsten Netzel, Christian Kuhn, Felix Krueger, Christoph Reich, Tim Wernicke, Michael Kneissl, and Markus Weyers, UV-C lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates, IEEE Phot. Tech. Lett., Vol. 27 (18), 1969 (2015).
              12. Gunnar Kusch, M. Nouf-Allehiani, Frank Mehnke, Christian Kuhn, Paul Edwards, Tim Wernicke, Arne Knauer, Viola Kueller, Naresh Kumar Gunasekar, Markus Weyers, Michael Kneissl, Carol Trager-Cowan, and Robert Martin, Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N, Appl. Phys. Lett. 107, 072103 (2015).
              13. K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, Desorption induced GaN quantum dots on (0001) AlN by MOVPE, phys. stat. sol. RRL (DOI 10.1002/pssr.201510217)
              14. M. Kneissl, F. Mehnke, C. Kuhn, C. Reich, M. Guttmann, J. Enslin, T. Wernicke , A. Knauer, V. Kueller, U. Zeimer, M. Lapeyrade, J. Raß, N. Lobo-Ploch, T. Kolbe, J. Glaab, S. Einfeldt, M. Weyers, Deep Ultraviolet LEDs: from materials research to real-world applications, IEEE Summer Topical Meeting Series (SUM), 9-10 (2015)
              15. Li Xiao-Hang, T. Detchprohm, Liu Yuh-Shiuan, R.D. Dupuis, Kao Tsung-Ting , S. Haq, Shen Shyh-Chiang, K. Mehta, P.D. Yoder, Wei Shuo, Y.O. Wang, H. Xie, A.M. Fischer, F.A. Ponce, T. Wernicke, C. Reich, M. Martens, M.Kneissl, Optically pumped low-threshold UV lasers, IEEE Summer Topical Meeting Series (SUM), 119-120 (2015)
              16. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stölmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Degradation of (InAlGa)N-based UV-B LEDs stressed by current and temperature, submitted to J. Appl. Phys., Vol. 118 (9), 094504(2015).
              17. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b), (2015), DOI: 10.1002/pssb.201552274
              18. L. Schade, T.Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552419
              19. L. Redaelli, H. Wenzel, J. Piprek, T. Weig, S. Einfeldt, M. Martens, G. Lükens, U.T. Schwarz, and M. Kneissl, Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current dependent gain and index spectra and self-consistent simulation, IEEE Journal of Quantum Electronics, Vol. 51, 2000506 (2015).
              20. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552277
              21. M. Rychetsky, I. L. Koslow, T. Wernicke, J. Rass, V. Hoffmann, M. Weyers, and M. Kneissl, Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552407
              22. Christoph Reich, Martin Guttmann, Martin Feneberg, Tim Wernicke, Frank Mehnke, Christian Kuhn, Jens Rass, Mickael Lapeyrade, Sven Einfeldt, Arne Knauer, Viola Kueller, Markus Weyers, Rüdiger Goldhahn, and Michael Kneissl, „Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well LEDs“, Appl. Phys. Lett. 107, 142101 (2015)
              23. U. Zeimer, J. Jeschke, A. Mogilatenko, A. Knauer, V. Kueller, V. Hoffmann,  C. Kuhn, F. Krüger, M. Martens, M. Kneissl, M. Weyers, Spatial inhomogeneities in structural and optical properties of AlxGa1-xN quantum wells induced by surface morphology of AlN/sapphire templates, Semiconductor Science and Technology 30 (11), 14008 (2015)
              24. A. Mogilatenko, J. Enslin, A. Knauer, F. Mehnke, K. Bellmann, T. Wernicke, M. Weyers, M. Kneissl, V-pit to truncated pyramid transition in AlGaN-based heterostructures, Semiconductor Science and Technology 30 (11), 114010 (2015).
              25. A. Navarro-Quezada, S. Alamé, N. Esser, J. Furthmüller, F. Bechstedt, Z. Galazka, , D. Skuridina, and P.Vogt, Near valence-band electronic properties of semiconducting β-Ga2O3 (100) single crystals, Phys. Rev. B. 92, 195306 (2015).
              26. M. Kneissl, A brief review of III-Nitride UV emitter technologies and applications , M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 1-26, Cham, Heidelberg, New York, London: Springer (2015)
              27. J. Rass, N Lobo-Ploch, Optical polarization and light extraction from UV LEDs, M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 137-170, Cham, Heidelberg, New York, London: Springer (2015)

              Publikationen 2014

                    1. P. Vogt, P. Capiod, M. Berthe, A. Resta, P. De Padova, T. Bruhn, G. Le Lay, B. Grandidier, Synthesis and elecrtrical conductivity of multilayer silicene, Appl. Phys. Lett. 104, 021602 (2014). V. Hoffmann, A. Mogilatenko, C.
                    2. V. Hoffmann, A. Mogilatenko, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes, Journal of Crystal Growth 391, 46 (2014), DOI: 10.1016/j.jcrysgro.2013.12.046
                    3. M. Martens, F. Mehnke, C. Kuhn, C. Reich, T. Wernicke, J. Rass, V. Küller, A. Knauer, C. Netzel, M. Weyers, M. Bickermann, M. Kneissl, Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates, IEEE Photonics Tech. Lett., 26, 342 (2014)
                    4. C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, M Weyers, Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers, Applied Physics Letters 104, 051906 (2014)
                    5. L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, Surface topology caused by dislocations in polar, semipolar and nonpolar InGaN/GaN heterostructures, phys. stat. sol. (a) 211, 756 (2014), DOI: 10.1002/pssa.201300448
                    6. A. Mogilatenko, H. Kirmse, J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Kneissl, M. Weyers, Analysis of crystal orientation in AlN layers grown on m-plane sapphire, Journal of Crystal Growth 400, 54 (2014); dx.doi.org/10.1016/j.jcrysgro.2014.04.014 (2014)
                    7. D. Skuridina, D. V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl, P. Vogt Surface and crystal structure structure of nitridated sapphire substrates and their effect on polar InN layers, Appl. Surf. Sci. 307, 461-467 (2014)
                    8. Neil W. Johnson, Patrick Vogt, Andrea Resta, Paola De Padova, Israel Perez, David Muir, Ernst Z. Kurmaev, Z. Kurmaev, Guy Le Lay, and Alexander Moewes, The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)  Adv. Funct. Mater. (2014), online 14.06.2014, DOI: 10.1002/adfm.201400769
                    9. Zhi-Long Liu, Mei-Xiao Wang, Jin-Peng Xu, Jian-Feng Ge, Guy Le Lay, Patrick Vogt, Dong Qian, Chun-Lei Gao, Canhua Liu, Jin-Feng Jia Various atomic structures of monolayer silicene fabricated on Ag(111), New Journal of Physics 16, 075006 (2014).
                    10. F. Mehnke, C. Kuhn, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, T. Wernicke, J. Rass, M. Weyers, and M. Kneissl, Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 105, 051113 (2014).
                    11. J. B. Park, T. Niermann, D. Berger, A. Knauer, I. Koslow, M. Weyers, M. Kneissl, and M. Lehmann, Impact of electron irradiation on electron holographic potentiometry, Appl. Phys. Lett 105, 094102 (2014).
                    12. Sebastian Friede, Sergei Kuehn, Jens W Tomm, Veit Hoffmann, Ute Zeimer, Markus Weyers, Michael Kneissl and Thomas Elsaesser, Nano-optical analysis of GaN-based diode lasers, Semicond. Sci. Technol. 29 112001 (2014)
                    13. Xiao-Hang Li, Theeradetch Detchprohm, Tsung-Ting Kao, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Russell D. Dupuis, Shuo Wang, Yong O. Wei, Hongen Xie, Alec M. Fischer, Fernando A. Ponce, Tim Wernicke, Christoph Reich, Martin Martens, and Michael Kneissl, Low threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple quantum well based lasers grown on sapphire substrates, Appl. Phys. Lett. 105, 141106 (2014).
                    14. Jörg Jeschke, U. Zeimer, L. Redaelli, S. Einfeldt, M. Kneissl, M. Weyers, Effect of quantum well non-uniformities on lasing threshold, linewidth and lateral near field filamentation in violet (Al,In)GaN laser diodes , Appl. Phys. Lett 105, 173501 (2014).
                    15. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth, doi:10.1016/j.jcrysgro.2014.11.016 (2014).
                    16. G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, AIP Advances 4, 127101 (2014).
                    17. Zhi-Long Liu,Mei-Xiao Wang, Canhua Liu, Jin-Feng Jia, Patrick Vogt, Claudio Quaresima, Carlo Ottaviani, Bruno Olivieri, Paola De Padova, Guy Le Lay, The fate of the 2√3 × 2√3R(30◦) silicene phase on Ag(111), APL MATERIALS 2, 092513 (2014).
                    18. D. Papadimitriou, G. Roupakas, E. Chatzitheodoridis, G. Halampalakis, S. Tselepis, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel, S. Alamé, P. Vogt, M. Kneissl, Chemical and electrochemical processing of high quality CIS/CIGS absorber, buffer window, and anti-reflective coating for low cost photovoltaic technology, Proceedings EU PVSEC 2014, 1812-1815 (2014).

                    Publications 2014

                    1. P. Vogt, P. Capiod, M. Berthe, A. Resta, P. De Padova, T. Bruhn, G. Le Lay, B. Grandidier, Synthesis and elecrtrical conductivity of multilayer silicene, Appl. Phys. Lett. 104, 021602 (2014). V. Hoffmann, A. Mogilatenko, C.
                    2. V. Hoffmann, A. Mogilatenko, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes, Journal of Crystal Growth 391, 46 (2014), DOI: 10.1016/j.jcrysgro.2013.12.046
                    3. M. Martens, F. Mehnke, C. Kuhn, C. Reich, T. Wernicke, J. Rass, V. Küller, A. Knauer, C. Netzel, M. Weyers, M. Bickermann, M. Kneissl, Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates, IEEE Photonics Tech. Lett., 26, 342 (2014)
                    4. C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, M Weyers, Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers, Applied Physics Letters 104, 051906 (2014)
                    5. L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, Surface topology caused by dislocations in polar, semipolar and nonpolar InGaN/GaN heterostructures, phys. stat. sol. (a) 211, 756 (2014), DOI: 10.1002/pssa.201300448
                    6. A. Mogilatenko, H. Kirmse, J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Kneissl, M. Weyers, Analysis of crystal orientation in AlN layers grown on m-plane sapphire, Journal of Crystal Growth 400, 54 (2014); dx.doi.org/10.1016/j.jcrysgro.2014.04.014 (2014)
                    7. D. Skuridina, D. V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl, P. Vogt Surface and crystal structure structure of nitridated sapphire substrates and their effect on polar InN layers, Appl. Surf. Sci. 307, 461-467 (2014)
                    8. Neil W. Johnson, Patrick Vogt, Andrea Resta, Paola De Padova, Israel Perez, David Muir, Ernst Z. Kurmaev, Z. Kurmaev, Guy Le Lay, and Alexander Moewes, The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)  Adv. Funct. Mater. (2014), online 14.06.2014, DOI: 10.1002/adfm.201400769
                    9. Zhi-Long Liu, Mei-Xiao Wang, Jin-Peng Xu, Jian-Feng Ge, Guy Le Lay, Patrick Vogt, Dong Qian, Chun-Lei Gao, Canhua Liu, Jin-Feng Jia Various atomic structures of monolayer silicene fabricated on Ag(111), New Journal of Physics 16, 075006 (2014).
                    10. F. Mehnke, C. Kuhn, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, T. Wernicke, J. Rass, M. Weyers, and M. Kneissl, Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 105, 051113 (2014).
                    11. J. B. Park, T. Niermann, D. Berger, A. Knauer, I. Koslow, M. Weyers, M. Kneissl, and M. Lehmann, Impact of electron irradiation on electron holographic potentiometry, Appl. Phys. Lett 105, 094102 (2014).
                    12. Sebastian Friede, Sergei Kuehn, Jens W Tomm, Veit Hoffmann, Ute Zeimer, Markus Weyers, Michael Kneissl and Thomas Elsaesser, Nano-optical analysis of GaN-based diode lasers, Semicond. Sci. Technol. 29 112001 (2014).
                    13. Xiao-Hang Li, Theeradetch Detchprohm, Tsung-Ting Kao, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Russell D. Dupuis, Shuo Wang, Yong O. Wei, Hongen Xie, Alec M. Fischer, Fernando A. Ponce, Tim Wernicke, Christoph Reich, Martin Martens, and Michael Kneissl, Low threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple quantum well based lasers grown on sapphire substrates, Appl. Phys. Lett. 105, 141106 (2014).
                    14. Jörg Jeschke, U. Zeimer, L. Redaelli, S. Einfeldt, M. Kneissl, M. Weyers, Effect of quantum well non-uniformities on lasing threshold, linewidth and lateral near field filamentation in violet (Al,In)GaN laser diodes , Appl. Phys. Lett 105, 173501 (2014).
                    15. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth, doi:10.1016/j.jcrysgro.2014.11.016 (2014).
                    16. G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, AIP Advances 4, 127101 (2014).
                    17. Zhi-Long Liu,Mei-Xiao Wang, Canhua Liu, Jin-Feng Jia, Patrick Vogt, Claudio Quaresima, Carlo Ottaviani, Bruno Olivieri, Paola De Padova, Guy Le Lay, The fate of the 2√3 × 2√3R(30◦) silicene phase on Ag(111), APL MATERIALS 2, 092513 (2014).

                    Publications 2013

                    1. N. Lobo Ploch, H. Rodriguez, C. Stölmacker, M. Hoppe, M. Lapeyrade, J. Stellmach, F. Mehnke, Tim Wernicke, A. Knauer, V. Kueller, M. Weyers, S. Einfeldt, M. Kneissl, Effective Thermal Management in Ultraviolet Light Emitting Diodes with Micro-LED Arrays, IEEE Trans Electron Devices, Vol. 60 (2) 782-786 (2013)
                    2. J. Stellmach, F, Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T. Wernicke, M. Kneissl, Structural and optical properties of semipolar (11-22) AlGaN grown on (10-10) sapphire by metal-organic vapour phase epitaxy, Journal of Crystal Growth 367 (2013) 42-47, DOI: 10.1016/j.jcrysgro.2013.01.006 (2013)
                    3. J. Bläsing, P. Veit, A. Dadgar, A. Krost, V. Holý, S. Ploch, M. Frentrup, T. Wernicke, and M. Kneissl, Growth and characterization of stacking fault reduced GaN (10-13) on sapphire, J. Phys. D: Appl. Phys. 46, 125308 (2013)
                    4. V. Kueller, A. Knauer, U. Zeimer, M. Kneissl, and M. Weyers, Controlled coalescence of MOVPE grown AlN during lateral overgrowth, Journal of Crystal Growth DOI: 10.1016/j.jcrysgro.2013.01.028 (2013)
                    5. M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret, Growth mode transition and relaxation of thin InGaN layers on GaN (0001), J. Crystal Growth 372, 65 (2013)
                    6. M. Pristovsek, R. Kremzow, M. Kneissl, Energetics of InGaAs quantum dot formation and relaxation on GaAs (001), Jpn. J. Appl. Phys., Vol. 52 (4), 041201 (2013).
                    7. P. De Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasegawa, M. C. Asensio, G. Le Lay, Evidence of Dirac Fermions in Multilayer Silicene Appl. Phys. Lett. 102, 163106 (2013).
                    8. Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl, Role of nitridation on the growth and the polarity of InN by metal-organic vapor phase epitaxy, J. Crystal Growth, 376, 17-22 (2013).
                    9. Michael Kneissl, Jens Rass, Lukas Schade, Ulrich T. Schwarz, Growth and optical properties of GaN-based non- and semipolar LEDs, Seong, T.-Y.; Han, J.; Amano, H.; Morkoç, H. (Eds.), III-Nitride Based Light Emitting Diodes and Applications (Topics in Applied Physics, Vol. 126), 83-119, Berlin, Heidelberg, New York: Springer (2013).
                    10. U. Zeimer, V. Kueller, A. Knauer, A. Mogilatenko, M. Weyers, M. Kneissl, High quality AlGaN grown on ELO AlN/sapphire templates, J. Crystal Growth 377, 32 (2013)
                    11. J. Schlegel, M. Brendel, M. Martens, A. Knigge, J. Rass, S. Einfeldt, F. Brunner,M. Weyers, and M. Kneissl, Influence of carrier lifetime, transit time and operation voltages on the photoresponse of visible-blind AlGaN MSM photodetectors, Jpn. J. Appl. Phys. 52,  DOI: 10.7567/JJAP.52.08JF01 (2013)
                    12. Jens Rass, Simon Ploch, Tim Wernicke, Martin Frentrup, Markus Weyers, and Michael Kneissl, Waveguide optimization for semipolar (In,Al,Ga)N laser diodes, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JG12 (2013)
                    13. Duc V. Dinh, S. Solopow, M. Pristovsek, M. Kneissl, Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JD03 (2013)
                    14. J. Avila, P. De Padova, S. Cho, I. Colambo, S. Lorcy, C. Quaresima, P. Vogt, A. Resta, G. Le Lay and M. C.Asensio, Presence of gapped silicene-derived band in the prototypical (3x3) silicene phase on silver (111) surfaces, (Fast Track Communication) J. Phys.: Cond. Mat. 25, 262001 (2013).
                    15. M. Pristovsek, A. Kadir, M. Kneissl, Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys., Vol. 52 , DOI: 10.7567/JJAP.52.08JB23 (2013).
                    16. L. Redaelli, A. Muhin, S. Einfeldt, P. Wolter, L. Weixelbaum and M. Kneissl, Ohmic Contacts on N-face n-type GaN after Low Temperature Annealing, IEEE Phot. Techn. Lett. 25 (13), 1278 (2013).
                    17. T. Kolbe, F. Mehnke, M. Guttmann, C. Kuhn, J. Rass, T. Wernicke and M. Kneissl, Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure, Appl. Phys. Lett., 103, 031109 (2013)
                    18. A. Resta, T. Leoni, C. Barth, A. Ranguis, C. Becker, T. Bruhn, P. Vogt & G. Le Lay, Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations, Sci. Rep. 3, 2399 (2013).
                    19. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, STM analysis of defects at the GaAs(001)-c(4x4) surface, Surf. Sci. 617, 162–166 (2013). http://dx.doi.org/10.1016/j.susc.2013.07.012
                    20. L. Redaelli, H. Wenzel, M. Martens, S. Einfeldt, M. Kneissl, and G. Tränkle, "Index antiguiding in narrow ridge-waveguide (In, AI)GaN based laser diodes," Journal of Applied Physics 114, 113102 (2013)
                    21. M. Kneissl, T. Wernicke, Optical and structural properties of InGaN light emitters on non- and semipolar GaN, B. Gil (Ed.), III-nitride semiconductors and their modern devices (Series on Semiconductor Science and Technology 18), 244-279, New York: Oxford University Press (2013)
                    22. P. De Padova, J. Avila, A. Resta, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T.  Bruhn, P. Vogt, M. C.  Asensio, G. Le Lay The quasiparticle band dispersion in epitaxial multilayer silicene, J. Phys.: Condens. Matter 25, 382202 (2013) (IOP select)
                    23. D. Skuridina, D. Dinh, M. Pristovsek, B. Lacroix, P. Ruterana, M. Hoffmann, S. Zlatko, M. Kneissl, P. Vogt, Polarity determination of InN and GaN by valence band photoelectron spectroscopy, J. Appl. Phys. 114, 173503 (2013)
                    24. M. Lapeyrade, Anton Muhin, Sven Einfeldt, Ute Zeimer, Anna Mogilatenko, Markus Weyers, Michael Kneissl, Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces, Semicond. Sci. Technol. 28 (2013), doi:10.1088/0268-1242/28/12/125015
                    25. C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M.Kneissl, Excitonic recombination in epitaxial lateral overgrown AlN on sapphire, Appl. Phys. Lett. 103, 212108, (2013).
                    26. F. Mehnke, T. Wernicke, H. Pinhel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, M. Kneissl, Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%, Appl. Phys. Lett. 103, 212109, (2013).
                    27. N. Lobo-Ploch, S. Einfeldt, M. Frentrup, J. Rass, T. Wernicke, A. Knauer, V. Küller, M. Weyers and M. Kneissl, Investigation of the temperature dependent efficiency droop in UV LEDs, Semicond. Sci. Technol. 28 , 125021, (2013), doi:10.1088/0268-1242/28/12/125021
                    28. M. Frentrup, N. Hatui, T. Wernicke, J. Stellmach, A. Bhattacharya and M. Kneissl, Determination of lattice parameters, strain state, and composition in semipolar III-nitrides using high resolution X-ray diffraction, Journal of Applied Physics 114, 213509 (2013); doi: 10.1063/1.4834521
                    29. P.Vogt, N.Esser, Surface and interface Science, Volume 3, Chapter Compound Semiconductor Surfaces, Ed. K. Wandelt, Wiley-VCH, November 2013; ISBN: 978-3-527-41157-3.

                    Publikationen 2013

                    1. N. Lobo Ploch, H. Rodriguez, C. Stölmacker, M. Hoppe, M. Lapeyrade, J. Stellmach, F. Mehnke, Tim Wernicke, A. Knauer, V. Kueller, M. Weyers, S. Einfeldt, M. Kneissl, Effective Thermal Management in Ultraviolet Light Emitting Diodes with Micro-LED Arrays, IEEE Trans Electron Devices, Vol. 60 (2) 782-786 (2013)
                    2. J. Stellmach, F, Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T. Wernicke, M. Kneissl, Structural and optical properties of semipolar (11-22) AlGaN grown on (10-10) sapphire by metal-organic vapour phase epitaxy, Journal of Crystal Growth 367 (2013) 42-47, DOI: 10.1016/j.jcrysgro.2013.01.006 (2013)
                    3. J. Bläsing, P. Veit, A. Dadgar, A. Krost, V. Holý, S. Ploch, M. Frentrup, T. Wernicke, and M. Kneissl, Growth and characterization of stacking fault reduced GaN (10-13) on sapphire, J. Phys. D: Appl. Phys. 46, 125308 (2013)
                    4. V. Kueller, A. Knauer, U. Zeimer, M. Kneissl, and M. Weyers, Controlled coalescence of MOVPE grown AlN during lateral overgrowth, Journal of Crystal Growth DOI: 10.1016/j.jcrysgro.2013.01.028 (2013)
                    5. M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret, Growth mode transition and relaxation of thin InGaN layers on GaN (0001), J. Crystal Growth 372, 65 (2013)
                    6. M. Pristovsek, R. Kremzow, M. Kneissl, Energetics of InGaAs quantum dot formation and relaxation on GaAs (001), Jpn. J. Appl. Phys., Vol. 52 (4), 041201 (2013).
                    7. P. De Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasegawa, M. C. Asensio, G. Le Lay, Evidence of Dirac Fermions in Multilayer Silicene Appl. Phys. Lett. 102, 163106 (2013).
                    8. Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl, Role of nitridation on the growth and the polarity of InN by metal-organic vapor phase epitaxy, J. Crystal Growth, 376, 17-22 (2013).
                    9. Michael Kneissl, Jens Rass, Lukas Schade, Ulrich T. Schwarz, Growth and optical properties of GaN-based non- and semipolar LEDs, Seong, T.-Y.; Han, J.; Amano, H.; Morkoç, H. (Eds.), III-Nitride Based Light Emitting Diodes and Applications (Topics in Applied Physics, Vol. 126), 83-119, Berlin, Heidelberg, New York: Springer (2013).
                    10. U. Zeimer, V. Kueller, A. Knauer, A. Mogilatenko, M. Weyers, M. Kneissl, High quality AlGaN grown on ELO AlN/sapphire templates, J. Crystal Growth 377, 32 (2013)
                    11. J. Schlegel, M. Brendel, M. Martens, A. Knigge, J. Rass, S. Einfeldt, F. Brunner,M. Weyers, and M. Kneissl, Influence of carrier lifetime, transit time and operation voltages on the photoresponse of visible-blind AlGaN MSM photodetectors, Jpn. J. Appl. Phys. 52,  DOI: 10.7567/JJAP.52.08JF01 (2013)
                    12. Jens Rass, Simon Ploch, Tim Wernicke, Martin Frentrup, Markus Weyers, and Michael Kneissl, Waveguide optimization for semipolar (In,Al,Ga)N laser diodes, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JG12 (2013)
                    13. Duc V. Dinh, S. Solopow, M. Pristovsek, M. Kneissl, Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JD03 (2013)
                    14. J. Avila, P. De Padova, S. Cho, I. Colambo, S. Lorcy, C. Quaresima, P. Vogt, A. Resta, G. Le Lay and M. C.Asensio, Presence of gapped silicene-derived band in the prototypical (3x3) silicene phase on silver (111) surfaces, (Fast Track Communication) J. Phys.: Cond. Mat. 25, 262001 (2013).
                    15. M. Pristovsek, A. Kadir, M. Kneissl, Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys., Vol. 52 , DOI: 10.7567/JJAP.52.08JB23 (2013).
                    16. L. Redaelli, A. Muhin, S. Einfeldt, P. Wolter, L. Weixelbaum and M. Kneissl, Ohmic Contacts on N-face n-type GaN after Low Temperature Annealing, IEEE Phot. Techn. Lett. 25 (13), 1278 (2013).
                    17. T. Kolbe, F. Mehnke, M. Guttmann, C. Kuhn, J. Rass, T. Wernicke and M. Kneissl, Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure, Appl. Phys. Lett., 103, 031109 (2013)
                    18. A. Resta, T. Leoni, C. Barth, A. Ranguis, C. Becker, T. Bruhn, P. Vogt & G. Le Lay, Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations, Sci. Rep. 3, 2399 (2013).
                    19. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, STM analysis of defects at the GaAs(001)-c(4x4) surface, Surf. Sci. 617, 162–166 (2013). http://dx.doi.org/10.1016/j.susc.2013.07.012
                    20. L. Redaelli, H. Wenzel, M. Martens, S. Einfeldt, M. Kneissl, and G. Tränkle, "Index antiguiding in narrow ridge-waveguide (In, AI)GaN based laser diodes," Journal of Applied Physics 114, 113102 (2013)
                    21. M. Kneissl, T. Wernicke, Optical and structural properties of InGaN light emitters on non- and semipolar GaN, B. Gil (Ed.), III-nitride semiconductors and their modern devices (Series on Semiconductor Science and Technology 18), 244-279, New York: Oxford University Press (2013)
                    22. P. De Padova, J. Avila, A. Resta, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T.  Bruhn, P. Vogt, M. C.  Asensio, G. Le Lay The quasiparticle band dispersion in epitaxial multilayer silicene, J. Phys.: Condens. Matter 25, 382202 (2013) (IOP select)
                    23. D. Skuridina, D. Dinh, M. Pristovsek, B. Lacroix, P. Ruterana, M. Hoffmann, S. Zlatko, M. Kneissl, P. Vogt, Polarity determination of InN and GaN by valence band photoelectron spectroscopy, J. Appl. Phys. 114, 173503 (2013)
                    24. M. Lapeyrade, Anton Muhin, Sven Einfeldt, Ute Zeimer, Anna Mogilatenko, Markus Weyers, Michael Kneissl, Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces, Semicond. Sci. Technol. 28 (2013), doi:10.1088/0268-1242/28/12/125015
                    25. C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M.Kneissl, Excitonic recombination in epitaxial lateral overgrown AlN on sapphire, Appl. Phys. Lett. 103, 212108, (2013).
                    26. F. Mehnke, T. Wernicke, H. Pinhel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, M. Kneissl, Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%, Appl. Phys. Lett. 103, 212109, (2013).
                    27. N. Lobo-Ploch, S. Einfeldt, M. Frentrup, J. Rass, T. Wernicke, A. Knauer, V. Küller, M. Weyers and M. Kneissl, Investigation of the temperature dependent efficiency droop in UV LEDs, Semicond. Sci. Technol. 28 , 125021, (2013), doi:10.1088/0268-1242/28/12/125021
                    28. M. Frentrup, N. Hatui, T. Wernicke, J. Stellmach, A. Bhattacharya and M. Kneissl, Determination of lattice parameters, strain state, and composition in semipolar III-nitrides using high resolution X-ray diffraction, Journal of Applied Physics 114, 213509 (2013); doi: 10.1063/1.4834521
                    29. P.Vogt, N.Esser, Surface and interface Science, Volume 3, Chapter Compound Semiconductor Surfaces, Ed. K. Wandelt, Wiley-VCH, November 2013; ISBN: 978-3-527-41157-3.

                    Publications 2012

                    1. J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson and T. Kolbe, Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells, Appl. Phys. Lett. 100, 021101 (2012).
                    2. Tim Wernicke, Lukas Schade, Carsten Netzel, Jens Rass, Veit Hoffmann, Simon Ploch, Arne Knauer, Markus Weyers, Ulrich Schwarz, Michael Kneissl, Indium incorporation and emission wavelength of polar, nonpolar, and semipolar InGaN quantum wells, Semiconductor Science & Technology 27, 024014 (2012).
                    3. S. Ploch, T. Wernicke, D. V. Dinh M. Pristovsek, M. Kneissl, Surface diffusion and layer morphology of {11-22} GaN layers grown by metal-organic vapor phase epitaxy, J. Appl Phys. 111, 033526 (2012).
                    4. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, Adsorption of pyrrole on GaAs(001) c(4x4): The role of surface defects, Phys. Rev. B 85, 075322 (2012).
                    5. S. Pandey, D. Cavalcoli, A. Minj, B. Fraboni, A. Cavallini, D. Skuridina, P. Vogt, M. Kneissl, Mobility Limiting Mechanisms in Polar Semiconductor Heterostructures, Acta Materialia (2012), doi:10.1016/j.actamat.2012.02.025
                    6. Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, and M. Kneissl,  Comparison of N- and In-polar InN layers grown by MOVPE, phys. stat. sol. (c) 9, 977 (2012).
                    7. Lukas Schade, Ulrich. T. Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, MarkusWeyers, Michael Kneissl, Auger recombination in nonpolar InGaN quantum wells, Proc. SPIE 8262, 82620K (2012), DOI: 10.1117/12.905955
                    8. L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, Y. V. Flores, S. Einfeldt, M. Kneissl, G. Tränkle, Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes, Proc. SPIE 8262, 826219 (2012); DOI: 10.1117/12.908368
                    9. J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, M. Kneissl, Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN, Proc. SPIE, vol. 8262, no. 826218 (2012).
                    10. T. Wunderer, C.L. Chua, J.E. Northrup, Z. Yang, N.M. Johnson, M. Kneissl, G.A. Garrett, H. Shen, M. Wraback, B. Moody, H.S. Craft, R. Schlesser, R.F. Dalmau, Z. Sitar, Optically Pumped UV Lasers Grown on Bulk AlN Substrates, phys. stat. sol. (c) 9, No. 3–4, 822 (2012).
                    11. P. Vogt, P. De Padova,C. Quaresima,J. Avila, E. Frantzeskakis, M.Asensio, A. Resta, B. Ealet, G. Le Lay, Silicene: Compelling experimental evidence for graphene-like two-dimensional silicon, Phys. Rev. Lett.  108, 155501 (2012). 
                    12. V. Kueller, A. Knauer, F. Brunner, A. Mogilatenko, M. Kneissl, and M. Weyers, "Investigation of inversion domain formation in AlN grown on sapphire by MOVPE", phys. stat. sol. (c), vol. 9, no. 3-4, pp. 496-498 (2012).
                    13. Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher; In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces, Phys. Rev B 86, 035308 (2012).
                    14. Duc V. Dinh, D. Skuridina, S. Solopow, F. Ivaldi, S.Kret, M. Pristovsek, P. Vogt, M. Kneissl, Growth and characterization of semipolar (11-22) InN, J. Appl. Phys. 112, 013530 (2012).
                    15. J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Pristovsek, M. Kneissl, MOVPE growth of semipolar (11-22) AlN on m-plane (10-10) sapphire, J. Cryst. Growth 335 (2012) 59-62 DOI: 10.1016/j.jcrysgro.2012.06.047
                    16. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck M. Weyers M. Kneissl, Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy, J. Cryst. Growth. DOI: 10.1016/j.jcrysgro.2012.07.016
                    17. T. Bruhn, L. Riele, B.-O. Fimland, N. Esser, P. Vogt, Optical investigations of the interface formation between organic molecules and semiconductor surfaces, Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012),  ISBN: 978-981-4417-11-2
                    18. L. Riele, B. Buick, E. Speiser, B.-O. Fimland, P. Vogt, W. Richter, Epitaxial-like Growth of Lead Phthalocyanine Thin Layers on GaAs(001), Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012), ISBN: 978-981-4417-11-2
                    19. R. Debusmann, V. Hoffmann, U. Brauch, M. Weyers, M. Kneissl, Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells, J. Appl. Phys. 112, 033110 (2012) DOI: 10.1063/1.4745025
                    20. V. Kueller, A. Knauer, C. Reich, A. Mogilatenko, M. Weyers, J. Stellmach, T. Wernicke, M. Kneissl, Z. Yang, C. L. Chua, and N. M. Johnson, Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs, IEEE Photonics Tech. Letters (2012) DOI: 10.1109/LPT.2012.2210542
                    21. C. Friedrich, A. Biermann, V. Hoffmann, M. Kneissl, N. Esser, P. Vogt, Preparation and atomic structure of reconstructed InGaN(0001) surfaces, J. Appl. Phys. 112, 033509 (2012)
                    22. Abdul Kadir, Konrad Bellmann, Tino Simoneit, Markus Pristovsek, and Michael Kneissl, Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE, phys. stat. aol. (a), DOI 10.1002/pssa.201228238 (2012)
                    23. G. Le Lay, P. De Padova, A. Resta, T. Bruhn and  P. Vogt,  Epitaxial silicene: can it be strongly strained?, Journal of Physics D 45, 392001 (2012).
                    24. S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, M. Kneissl, Indium incorporation efficiency and critical layer thickness in (20-21) InGaN layers on GaN, Appl. Phys. Lett. 101, 202102 (2012).
                    25. A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich, and M. Kneissl, AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates, phys. stat. sol. (a), DOI:10.1002/pssa.201200648 (2012).

                    Publikationen 2011

                    1. Tim Wernicke, Simon Ploch, Veit Hoffmann, Arne Knauer, Markus Weyers, and Michael Kneissl, Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates, phys. stat. sol. (b) 248, No. 3, 574 (2011).
                    2. M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl, Crystall orientation of GaN layers on (10-10) Sapphire, phys. stat. sol. (b) 248, No.3, 583 (2011).
                    3. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research 45, 1481 (2011).
                    4. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011).
                    5. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface band bending at GaAs(001) surfaces, Phys. Rev. B 83, 045307 (2011)
                    6. J. Stellmach M. Pristovsek, Ö. Savas, J. Schlegel, E. V. Yakovlev, M. Kneissl, High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor, Journal of Crystal Growth 315, 229 (2011).
                    7. L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, Polarization dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells, phys. stat. sol. (b) 248, No.3, 638 (2011).
                    8. F. Ivaldi, J. Domagala, S. Kret, Ch. Meissner, M. Pristovsek, M. Högele, and M. Kneissl, Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE, Jpn. J. of Appl. Phys. 50, No. 3, (2011).
                    9. T. Kolbe, A. Knauer, J. Stellmach, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes, Proc. SPIE 7939, 79391G (2011).
                    10. P. Kleinschmidt, H. Döscher, P. Vogt, T. Hannappel, Direct observation of dimer flipping at H-terminated InP and GaP (001) surfaces, Phys. Rev. B 83, 155316 (2011)
                    11. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001), J. Nanoparticle Research. (online) DOI 10.1007/s11051-011-0340-0
                    12. M. Martens, J. Schlegel, P. Vogt, F. Brunner., R. Lossy, J. Würfl, M. Weyers, M. Kneissl, High gain UV photodetectors based on AlGaN/GaN heterostructures for optical switching, Appl. Phys. Lett. 98, 211114 (2011); doi:10.1063/1.3595303.
                    13. Michael Kneissl, Tim Kolbe, Jessica Schlegel, Joachim Stellmach, Chris Chua, Zhihong Yang, Arne Knauer, Markus Weyers, Noble M. Johnson, AlGaN-based Ultraviolet Lasers - Applications and Materials Challenges, OSA Technical Digest (CD) (Optical Society of America, 2011), JTuB1 (2011).
                    14. Carsten Netzel, Soheil Hatami, Veit Hoffmann, Tim Wernicke, Arne Knauer, Michael Kneissl, and Markus Weyers, GaInN quantum well design and measurement conditions affecting the emission energy S-shape, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000956.
                    15. R. Aleksiejunas, L. Lubys, M. Vengris, K. Jarasiunas, T. Wernicke, V. Hoffmann, C. Netzel, A. Knauer, M. Weyers, and M. Kneissl, Study of excess carrier dynamics in polar, semipolar, and non-polar InGaN epilayers and QWs, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000973.
                    16. Michael Kneissl & Jens Raß, Blue and green-emitting laser diodes, Landolt-Börnstein VIII-Vol. B Part III – Laser System, 27-42, Berlin, Heidelberg, New York: Springer (2011).
                    17. S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl, Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy, J Cryst. Growth 331, 25 (2011).
                    18. L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M.Weyers, and M. Kneissl, On the optical polarization properties of semipolar InGaN quantum wells, Appl. Phys. Lett 99, 051103 (2011).
                    19. A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, and M. Kneissl, ‘Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy’, J. Cryst. Growth 334, 40 (2011).
                    20. C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, A Vescan, M Weyers, M Kneissl, Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells, Semicond. Sci. Technol. 26, 105017 (2011).
                    21. M. Pristovsek, A. Kadir, Ch. Meissner, T. Schwaner, M. Leyer, M. Kneissl, Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy, J. Appl. Phys. 110 (7) 073527(2011).
                    22. J.Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse,  A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl, Polarization dependent study of gain anisotropy in semipolar InGaN lasers, Appl. Phys. Lett. 99 (17) 171105 (2011).
                    23. L. Riele, T. Bruhn, R. Passmann, V. Rackwitz, B. O. Fimland, P. Vogt, Reconstruction dependent epitaxial growth of lead-phthalocyanine films on GaAs(001) surfaces, Phys. Rev. B 84, 205317 (2011).
                    24. Viola Kueller, Arne Knauer, Frank Brunner, Anna Mogilatenko, Michael Kneissl, Markus Weyers, Investigation of inversion domain formation in AlN grown on sapphire by MOVPE, phys. stat. sol. (c) (2011), DOI: 10.1002/pssc.201100495
                    25. L. Schade, U. T. Schwarz, T.Wernicke, S. Ploch, M.Weyers, M. Kneissl, Spectral properties of polarized light from semipolar grown InGaN quantum wells, phys. stat. sol. (c) (2011), DOI:10.1002/pssc.201100493
                    26. T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodesAppl. Phys. Lett. 99, 261105 (2011).
                    27. V. Kueller, A. Knauer, U. Zeimer, H. Rodriguez, A. Mogilatenko, M. Kneissl, M. Weyers, (Al,Ga)N overgrowth over AlN ridges oriented in [11-20] and [1-100] direction, phys. stat. solidi (c) 8, 2022–2024 (2011).


                    Publikationen 2012

                    1. J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson and T. Kolbe, Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells, Appl. Phys. Lett. 100, 021101 (2012).
                    2. Tim Wernicke, Lukas Schade, Carsten Netzel, Jens Rass, Veit Hoffmann, Simon Ploch, Arne Knauer, Markus Weyers, Ulrich Schwarz, Michael Kneissl, Indium incorporation and emission wavelength of polar, nonpolar, and semipolar InGaN quantum wells, Semiconductor Science & Technology 27, 024014 (2012).
                    3. S. Ploch, T. Wernicke, D. V. Dinh M. Pristovsek, M. Kneissl, Surface diffusion and layer morphology of {11-22} GaN layers grown by metal-organic vapor phase epitaxy, J. Appl Phys. 111, 033526 (2012).
                    4. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, Adsorption of pyrrole on GaAs(001) c(4x4): The role of surface defects, Phys. Rev. B 85, 075322 (2012).
                    5. S. Pandey, D. Cavalcoli, A. Minj, B. Fraboni, A. Cavallini, D. Skuridina, P. Vogt, M. Kneissl, Mobility Limiting Mechanisms in Polar Semiconductor Heterostructures, Acta Materialia (2012), doi:10.1016/j.actamat.2012.02.025
                    6. Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, and M. Kneissl,  Comparison of N- and In-polar InN layers grown by MOVPE, phys. stat. sol. (c) 9, 977 (2012).
                    7. Lukas Schade, Ulrich. T. Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, MarkusWeyers, Michael Kneissl, Auger recombination in nonpolar InGaN quantum wells, Proc. SPIE 8262, 82620K (2012), DOI: 10.1117/12.905955
                    8. L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, Y. V. Flores, S. Einfeldt, M. Kneissl, G. Tränkle, Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes, Proc. SPIE 8262, 826219 (2012); DOI: 10.1117/12.908368
                    9. J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, M. Kneissl, Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN, Proc. SPIE, vol. 8262, no. 826218 (2012).
                    10. T. Wunderer, C.L. Chua, J.E. Northrup, Z. Yang, N.M. Johnson, M. Kneissl, G.A. Garrett, H. Shen, M. Wraback, B. Moody, H.S. Craft, R. Schlesser, R.F. Dalmau, Z. Sitar, Optically Pumped UV Lasers Grown on Bulk AlN Substrates, phys. stat. sol. (c) 9, No. 3–4, 822 (2012).
                    11. P. Vogt, P. De Padova,C. Quaresima,J. Avila, E. Frantzeskakis, M.Asensio, A. Resta, B. Ealet, G. Le Lay, Silicene: Compelling experimental evidence for graphene-like two-dimensional silicon, Phys. Rev. Lett.  108, 155501 (2012). 
                    12. V. Kueller, A. Knauer, F. Brunner, A. Mogilatenko, M. Kneissl, and M. Weyers, "Investigation of inversion domain formation in AlN grown on sapphire by MOVPE", phys. stat. sol. (c), vol. 9, no. 3-4, pp. 496-498 (2012).
                    13. Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher; In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces, Phys. Rev B 86, 035308 (2012).
                    14. Duc V. Dinh, D. Skuridina, S. Solopow, F. Ivaldi, S.Kret, M. Pristovsek, P. Vogt, M. Kneissl, Growth and characterization of semipolar (11-22) InN, J. Appl. Phys. 112, 013530 (2012).
                    15. J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Pristovsek, M. Kneissl, MOVPE growth of semipolar (11-22) AlN on m-plane (10-10) sapphire, J. Cryst. Growth 335 (2012) 59-62 DOI: 10.1016/j.jcrysgro.2012.06.047
                    16. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck M. Weyers M. Kneissl, Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy, J. Cryst. Growth. DOI: 10.1016/j.jcrysgro.2012.07.016
                    17. T. Bruhn, L. Riele, B.-O. Fimland, N. Esser, P. Vogt, Optical investigations of the interface formation between organic molecules and semiconductor surfaces, Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012),  ISBN: 978-981-4417-11-2
                    18. L. Riele, B. Buick, E. Speiser, B.-O. Fimland, P. Vogt, W. Richter, Epitaxial-like Growth of Lead Phthalocyanine Thin Layers on GaAs(001), Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012), ISBN: 978-981-4417-11-2
                    19. R. Debusmann, V. Hoffmann, U. Brauch, M. Weyers, M. Kneissl, Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells, J. Appl. Phys. 112, 033110 (2012) DOI: 10.1063/1.4745025
                    20. V. Kueller, A. Knauer, C. Reich, A. Mogilatenko, M. Weyers, J. Stellmach, T. Wernicke, M. Kneissl, Z. Yang, C. L. Chua, and N. M. Johnson, Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs, IEEE Photonics Tech. Letters (2012) DOI: 10.1109/LPT.2012.2210542
                    21. C. Friedrich, A. Biermann, V. Hoffmann, M. Kneissl, N. Esser, P. Vogt, Preparation and atomic structure of reconstructed InGaN(0001) surfaces, J. Appl. Phys. 112, 033509 (2012)
                    22. Abdul Kadir, Konrad Bellmann, Tino Simoneit, Markus Pristovsek, and Michael Kneissl, Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE, phys. stat. aol. (a), DOI 10.1002/pssa.201228238 (2012)
                    23. G. Le Lay, P. De Padova, A. Resta, T. Bruhn and  P. Vogt,  Epitaxial silicene: can it be strongly strained?, Journal of Physics D 45, 392001 (2012).
                    24. S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, M. Kneissl, Indium incorporation efficiency and critical layer thickness in (20-21) InGaN layers on GaN, Appl. Phys. Lett. 101, 202102 (2012).
                    25. A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich, and M. Kneissl, AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates, phys. stat. sol. (a), DOI:10.1002/pssa.201200648 (2012).

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