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Inhalt des Dokuments

Publikationen 2010

  1. C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, M. Kneissl, and N. Szabo, Influence of the wave function overlap in GaInN quantum wells on the temperature and excitation power dependent photoluminescence intensity, Journal of Applied Physics 107, 033510 (2010).
  2. N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt , M. Weyers and M. Kneissl, Enhancement of light extraction in UV LEDs using nanopixel contact design with Al reflector, Appl. Phys. Lett. 96, 081109 (2010) DOI: 10.1063/1.3334721.
  3. J. R. van Look, S. Einfeldt, V. Hoffmann, A. Knauer, M. Weyers, P. Vogt and M. Kneissl, Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates, IEEE Photonics Tech. Lett, vol. 22, is. 6, 416 (2010).
  4. Duc Dinh, M. Pristovsek, R. Kremzow, M. Kneissl, Growth of semipolar (10-1-3) InN on m-plane sapphire using MOVPE, Phys. stat. sol. (RRL) 4, No. 5-6, 127 (2010) / DOI 10.1002/pssr.201004043.
  5. R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. brauch, T. Graf, M. Weyers, M. Kneissl; InGaN/GaN Disk Laser for Blue-Violet Emission Wavelengths; IEEE Photonics Technology Letters 22 (9), 652 (2010).  
  6. U. Zeimer, U. Jahn, V. Hoffmann, M. Weyers, M. Kneissl, Optical and structural properties of InGaN/(AlIn)GaN multiple quantum wells grown at different temperatures and In supply, Journal of Electronic Materials, Vol. 39, 677 (2010).
  7. T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl, Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes, phys. stat. sol. (c) (2010), DOI: 10.1002/pssc.200983629.
  8. T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl, (In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width, phys. stat. sol. (a) 207 (2010). DOI: 10.1002/pssa.201026046.
  9. R. Kremzow, M. Pristovsek, J. Stellmach, Ö. Savaş, M. Kneissl, Metalorganic Vapor Phase Epitaxy of InN on GaN using tertiary-butylhydrazine as Nitrogen Source, Journal of Crystal Growth (2010), DIO:10.1016/j.jcrysgro.2010.03.019.
  10. Jens Raß, Tim Wernicke, Raimund Kremzow, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers, Michael Kneissl, Facet formation for laser diodes on nonpolar and semipolar GaN, phys. stat. sol. (a) (2010), DOI 10.1002/pssa.200983425.
  11. S. Ploch, M. Frentrup, T.Wernicke, M. Pristovsek, M. Weyers, M. Kneissl, Orientation control of GaN {11-22} and {10-13} grown on (10-10) sapphire by metal-organic vapor phase epitaxy, J Cryst. Growth, 312, 2171 (2010).
  12. T. Bruhn, R. Paßmann, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface electric field at GaAs(001)-c(4x4) measured via the linear electro-optic effect, phys. stat. sol. (b) (2010).
  13. M. Pristovsek, Determination of the complex linear electro-optic coefficient of GaAs and InP, physica status solidi (b) 247, 1974-1978 (2010) DOI:10.1002/pssb.200983950.
  14. Carsten Netzel, Veit Hoffmann, Tim Wernicke, Arne Knauer, Markus Weyers, Hans Wenzel, and Michael Kneissl, Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells, phys. stat. sol. (c), 1872 (2010).
  15. M. Kneissl, T. Kolbe, N. Lobo, J. Stellmach, A. Knauer, V. Kueller, H. Rodriguez, S. Einfeldt, M. Weyers, Advances in InAlGaN-based deep UV light emitting diode technologies, Proceedings of the 12th International Symposium on the Science and Technology of Light Sources and the 3rd International Conference on White LEDs and Solid State Lighting, LS-WLED 2010, 265-268 (2010).
  16. W. W. Chow, M. H. Crawford and J. Y. Tsao, M. Kneissl, Internal efficiency of InGaN light-emitting diodes: Beyond a quasi-equilibrium model, Appl. Phys. Lett. 97, 121105 (2010).
  17. V. Hoffmann, C. Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, M. Weyers, G. Tränkle, M. Kneissl, Well width study of InGaN multiple quantum well structures for blue-green emitters, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.09.013
  18. V. Hoffmann, A. Knauer, C. Brunner, S. Einfeldt, M. Weyers, G.Tränkle, K. Haberland, J.-T. Zettler, M. Kneissl, Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.09.0484.
  19. H. Rodriguez, N. Lobo, S. Einfeldt, A. Knauer, M. Weyers and M.Kneissl, GaN-based Ultraviolet Light-Emitting Diodes with Multifinger Contacts, phys. stat. sol. (a), (2010), DOI: 10.1002/pssa.201026193
  20. V. Küller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Weyers, and M. Kneissl, Growth of AlGaN and AlN on Patterned AlN/Sapphire Templates, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.06.040
  21. T. Kolbe, A. Knauer, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 97, 171105 (2010).
  22. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research (2010), doi: 10.1016/j.watres.2010.11.015.
  23. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011)

Publikationen 2009

  1. T. Kolbe, A. Knauer, H. Wenzel, S. Einfeldt, V. Küller, P. Vogt, M. Weyers, M. Kneissl, Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers, phys. stat .sol. (c), 1-4 (2009), DOI: 10.1002/pssa.200880895.
  2. A. Knauer, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, and T. Zettler, Optimization of InGaN/(In,Al,Ga)N based near UV-LEDs by MQW strain balancing with in-situ wafer bow sensor, phys. stat .sol. (a) 206, 211-214 (2009).
  3. T. Wernicke, U. Zeimer, C. Netzel, F. Brunner, A. Knauer, M. Weyers, M. Kneissl, Epitaxial Lateral Overgrowth on (2-1-10) a-Plane GaN with [0-111] Oriented Stripes, J. Crys. Growth, (2009), DOI:10.1016/j.jcrysgro.2009.01.0
  4. A. Knauer, F. Brunner, T. Kolbe V. Küller, H. Rodriguez. S. Einfeldt, M. Weyers and M. Kneissl, MOVPE growth for UV-LEDs, Proc. SPIE 7231, 72310G (2009).
  5. Michael Kneissl,Zhihong Yang, Mark Teepe, Noble M. Johnson, Ultraviolet laser diodes on AlN and sapphire substrates, Proc. SPIE 7230, 7230-13 (2009).
  6. M. Pristovsek, J. Stellmach, M. Leyer, M. Kneissl, Growth mode of InGaN on GaN (0001) in MOVPE, phys. stat .sol. (c), 1– 5 (2009) DOI: 10.1002/pssc.200880915
  7. Christian Meissner, Simon Ploch, Markus Pristovsek, Michael Kneissl, Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE, phys. stat .sol. (c), 6, S2, S545 (2009). DOI: 10.1002/pssc.200880872
  8. S. Ploch, C. Meissner, M. Pristovsek, M. Kneissl, Growth Mode and Shape of InN Quantum Dots and Nanostructures grown by Metal Organic Vapour Phase Epitaxy, phys. stat .sol. c 6, s574 (2008). DOI: 10.1002/pssc.200880938
  9. R. Paßmann, T. Bruhn, T.A. Nilson, B. O. Fimland, M. Kneissl, N. Esser, P.Vogt, Adsorption geometry of hydrocarbon ring molecules on GaAs(001)c4x4, Phys. Status Solidi B 246 (Feature Article), 1504-1509 (2009)  DOI: 10.1002/pssb.200945178
  10. Regina Passmann, Priscila Favero, Wolf Gero Schmidt, Ronei Miotto, Walter Braun, Wolfgang Richter, Michael Kneissl, Norbert Esser and Patrick Vogt, Bonding configuration of cyclopentene on InP(001)(2x4) surface, Phys. Rev. B 80, 125303 (2009).
  11. Jens Raß, Tim Wernicke, Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Jan Kupec, Bernd Witzigmann, Patrick Vogt, Sven Einfeldt, Markus Weyers, Michael Kneissl, Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN, phys. stat. sol. (RRL) 4, 1-3 (2010). (DOI 10.1002/pssr.200903325).
  12. R. Paßmann, T. Bruhn, B. O. Fimland, W. Richter, M. Kneissl, N. Esser, P. Vogt, Adsorption of cyclopentene on GaAs(001) and InP(001), a comparative study by synchrotron-based core level spectroscopy, World Scientific WSPC - Proceedings of the workshop on synchrotron radiation and nano-structures 1, (2009), ISBN-13: 978-981-4280-83-9
  13. W. Neumann, A. Mogilatenko, T. Wernicke, E. Richter, M. Weyers, M. Kneissl, Structure investigations of nonpolar GaN layers, Journal of Microscopy (2009) DOI: 10.1111/j.1365-2818.2009.03249.
  14. M. Kneissl, T. Kolbe, N. Lobo, J. Stellmach, A. Knauer, V. Küller, H. Rodriguez, S. Einfeldt, Markus Weyers, Deep UV nitride-based light emitting diodes - applications and challenges, Proceedings of the 6th China International Forum on Solid State Lighting (2009).

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