Publikationen
2023
Muhin,
Anton;
Guttmann,
Martin;
Montag,
Verena;
Susilo,
Norman;
Ziffer,
Eviathar;
Sulmoni,
Luca;
Hagedorn,
Sylvia;
Lobo-Ploch,
Neysha;
Rass,
Jens;
Cancellara,
Leonardo;
Wu,
Shaojun;
Wernicke,
Tim;
Kneissl,
Michael
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Phys. Status Solidi A, 220 (16) :2200458
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 1862-6300
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Phys. Status Solidi A, 220 (16) :2200458
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 1862-6300
Kneissl,
Michael;
Christen,
Jürgen;
Hoffmann,
Axel;
Monemar,
Bo;
Wernicke,
Tim;
Schwarz,
Ulrich;
Haglund,
Åsa;
Meneghini,
Matteo
Nitride Semiconductors
Phys. Status Solidi B, 260 (8) :2300286
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 0370-1972
Nitride Semiconductors
Phys. Status Solidi B, 260 (8) :2300286
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 0370-1972
Persson,
Lars;
Hjort,
Filip;
Cardinali,
Giulia;
Enslin,
Johannes;
Kolbe,
Tim;
Wernicke,
Tim;
Kneissl,
Michael;
Ciers,
Joachim;
Haglund,
Åsa
Athermalization of the Lasing Wavelength in Vertical-Cavity Surface-Emitting Lasers
Laser Photonics Rev, 17 (8) :2300009
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 1863-8880
Athermalization of the Lasing Wavelength in Vertical-Cavity Surface-Emitting Lasers
Laser Photonics Rev, 17 (8) :2300009
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 1863-8880
Kolbe,
Tim;
Knauer,
Arne;
Rass,
Jens;
Cho,
Hyun Kyong;
Hagedorn,
Sylvia;
Bilchenko,
Fedir;
Muhin,
Anton;
Ruschel,
Jan;
Kneissl,
Michael;
Einfeldt,
Sven;
Weyers,
Markus
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
Appl. Phys. Lett., 122 (19) :191101
Mai 2023
ISSN: 0003-6951
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
Appl. Phys. Lett., 122 (19) :191101
Mai 2023
ISSN: 0003-6951
Piva,
F.;
Pilati,
M.;
Buffolo,
M.;
Roccato,
N.;
Susilo,
N.;
Hauer Vidal,
D.;
Muhin,
A.;
Sulmoni,
L.;
Wernicke,
T.;
Kneissl,
M.;
De Santi,
C.;
Meneghesso,
G.;
Zanoni,
E.;
Meneghini,
M.
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
Appl. Phys. Lett., 122 (18) :181102
Mai 2023
ISSN: 0003-6951
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
Appl. Phys. Lett., 122 (18) :181102
Mai 2023
ISSN: 0003-6951
Roccato,
Nicola;
Piva,
Francesco;
De Santi,
Carlo;
Buffolo,
Matteo;
Fregolent,
Manuel;
Pilati,
Marco;
Susilo,
Norman;
Vidal,
Daniel Hauer;
Muhin,
Anton;
Sulmoni,
Luca;
Wernicke,
Tim;
Kneissl,
Michael;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico;
Meneghini,
Matteo
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
Appl. Phys. Lett., 122 (16) :161105
April 2023
ISSN: 0003-6951
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
Appl. Phys. Lett., 122 (16) :161105
April 2023
ISSN: 0003-6951
Höpfner,
Jakob;
Gupta,
Priti;
Guttmann,
Martin;
Ruschel,
Jan;
Glaab,
Johannes;
Kolbe,
Tim;
Rass,
Jens;
Knauer,
Arne;
Stölmacker,
Christoph;
Einfeldt,
Sven;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
Appl. Phys. Lett., 122 (15) :151104
April 2023
ISSN: 0003-6951
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
Appl. Phys. Lett., 122 (15) :151104
April 2023
ISSN: 0003-6951
Piva,
F.;
Grigoletto,
M.;
Brescancin,
R.;
De Santi,
C.;
Buffolo,
M.;
Ruschel,
J.;
Glaab,
J.;
Hauer Vidal,
D.;
Guttmann,
M.;
Rass,
J.;
Einfeldt,
S.;
Susilo,
N.;
Wernicke,
T.;
Kneissl,
M.;
Meneghesso,
G.;
Zanoni,
E.;
Meneghini,
M.
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
Appl. Phys. Lett., 122 (15) :151108
April 2023
ISSN: 0003-6951
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
Appl. Phys. Lett., 122 (15) :151108
April 2023
ISSN: 0003-6951
Piva,
F.;
Buffolo,
M.;
Santi,
C. De;
Pilati,
M.;
Roccato,
N.;
Muhin,
A.;
Susilo,
N.;
Vidal,
D. Hauer;
Sulmoni,
L.;
Wernicke,
T.;
Kneissl,
M.;
Meneghesso,
G.;
Zanoni,
E.;
Meneghini,
M.
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
, Band12421, Seite 1242107
März 2023
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
, Band12421, Seite 1242107
März 2023
Meneghini,
Matteo;
Roccato,
Nicola;
Piva,
Francesco;
Santi,
Carlo De;
Buffolo,
Matteo;
Haller,
Camille;
Carlin,
Jean-François;
Grandjean,
Nicolas;
Tibaldi,
Alberto;
Bertazzi,
Francesco;
Goano,
Michele;
Verzellesi,
Giovanni;
Wernicke,
Tim;
Kneissl,
Michael;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico
III-N optoelectronic devices: understanding the physics of electro-optical degradation
, Band12441, Seite 124410D
März 2023
III-N optoelectronic devices: understanding the physics of electro-optical degradation
, Band12441, Seite 124410D
März 2023
Bergmann,
Michael A.;
Enslin,
Johannes;
Guttmann,
Martin;
Sulmoni,
Luca;
Ploch,
Neysha Lobo;
Hjort,
Filip;
Kolbe,
Tim;
Wernicke,
Tim;
Kneissl,
Michael;
Haglund,
Åsa
Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
ACS Photonics, 10 (2) :368–373
Februar 2023
Herausgeber: American Chemical Society
Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
ACS Photonics, 10 (2) :368–373
Februar 2023
Herausgeber: American Chemical Society
Cameron,
Douglas;
Coulon,
Pierre-Marie;
Fairclough,
Simon;
Kusch,
Gunnar;
Edwards,
Paul R.;
Susilo,
Norman;
Wernicke,
Tim;
Kneissl,
Michael;
Oliver,
Rachel A.;
Shields,
Philip A.;
Martin,
Robert W.
Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes
Nano Lett., 23 (4) :1451–1458
Februar 2023
Herausgeber: American Chemical Society
ISSN: 1530-6984
Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes
Nano Lett., 23 (4) :1451–1458
Februar 2023
Herausgeber: American Chemical Society
ISSN: 1530-6984
Knauer,
A.;
Kolbe,
T.;
Hagedorn,
S.;
Hoepfner,
J.;
Guttmann,
M.;
Cho,
H. K.;
Rass,
J.;
Ruschel,
J.;
Einfeldt,
S.;
Kneissl,
M.;
Weyers,
M.
Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
Applied Physics Letters, 122 (1) :011102
Januar 2023
ISSN: 0003-6951
Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
Applied Physics Letters, 122 (1) :011102
Januar 2023
ISSN: 0003-6951
2022
[English]
Tanaka,
Shiki;
Ishii,
Ryota;
Susilo,
Norman;
Wernicke,
Tim;
Kneissl,
Michael;
Funato,
Mitsuru;
Kawakami,
Yoichi
Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions
JAPANESE JOURNAL OF APPLIED PHYSICS, 61 (11)
November 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0021-4922
Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions
JAPANESE JOURNAL OF APPLIED PHYSICS, 61 (11)
November 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0021-4922
[English]
Cho,
H. K.;
Mogilatenko,
A.;
Susilo,
N.;
Ostermay,
I;
Seifert,
S.;
Wernicke,
T.;
Kneissl,
M.;
Einfeldt,
S.
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37 (10)
Oktober 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37 (10)
Oktober 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English]
Cardinali,
G.;
Hjort,
F.;
Prokop,
N.;
Enslin,
J.;
Cobet,
M.;
Bergmann,
M. A.;
Gustavsson,
J.;
Ciers,
J.;
Haeusler,
I.;
Kolbe,
T.;
Wernicke,
T.;
Haglund,
Å.;
Kneissl,
M.
Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
APPLIED PHYSICS LETTERS, 121 (10)
September 2022
Herausgeber: AIP Publishing
ISSN: 0003-6951
Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
APPLIED PHYSICS LETTERS, 121 (10)
September 2022
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English]
Busch,
Loris;
Schleusener,
Johannes;
Diaz,
Daniela F. Zamudio;
Kroeger,
Marius;
Lohan,
Silke B.;
Zwicker,
Paula;
Sven,
Einfeldt;
Kneissl,
Michael;
Kuehl,
Anja A.;
Witzel,
Christian;
Klose,
Holger;
Keck,
Cornelia M.;
Kramer,
Axel;
Meinke,
Martina C.
[YIA] THE INFLUENCE OF SKIN BARRIER DISRUPTION AND MELANIN CONTENT ON THE FORMATION OF DNA LESIONS AND RADICALS IN EX VIVO HUMAN SKIN INDUCED BY 233 NM FAR-UVC IRRADIATION FROM LEDS
FREE RADICAL BIOLOGY AND MEDICINE, 189 (1) :31
August 2022
Herausgeber: ELSEVIER SCIENCE INC
ISSN: 0891-5849
[YIA] THE INFLUENCE OF SKIN BARRIER DISRUPTION AND MELANIN CONTENT ON THE FORMATION OF DNA LESIONS AND RADICALS IN EX VIVO HUMAN SKIN INDUCED BY 233 NM FAR-UVC IRRADIATION FROM LEDS
FREE RADICAL BIOLOGY AND MEDICINE, 189 (1) :31
August 2022
Herausgeber: ELSEVIER SCIENCE INC
ISSN: 0891-5849
[English]
Wu,
Shaojun;
Guttmann,
Martin;
Lobo-Ploch,
Neysha;
Gindele,
Frank;
Susilo,
Norman;
Knauer,
Arne;
Kolbe,
Tim;
Rass,
Jens;
Hagedorn,
Sylvia;
Cho,
Hyun Kyong;
Hilbrich,
Katrin;
Feneberg,
Martin;
Goldhahn,
Ruediger;
Einfeldt,
Sven;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37 (6)
Juni 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37 (6)
Juni 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English]
Guttmann,
Martin;
Lobo-Ploch,
Neysha;
Gundlach,
Heiko;
Mehnke,
Frank;
Sulmoni,
Luca;
Wernicke,
Tim;
Cho,
Hyun Kyong;
Hilbrich,
Katrin;
Kuelberg,
Alexander;
Friedler,
Matthias;
Filler,
Thomas;
Kaepplinger,
Indira;
Mitrenga,
Dennis;
Maier,
Christian;
Brodersen,
Olaf;
Ortlepp,
Thomas;
Woggon,
Ulrike;
Einfeldt,
Sven;
Kneissl,
Michael
Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 55 (20)
Mai 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0022-3727
Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 55 (20)
Mai 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0022-3727
[English]
Cameron,
Douglas;
Edwards,
Paul R.;
Mehnke,
Frank;
Kusch,
Gunnar;
Sulmoni,
Luca;
Schilling,
Marcel;
Wernicke,
Tim;
Kneissl,
Michael;
Martin,
Robert W.
The influence of threading dislocations propagating through an AlGaN UVC LED
APPLIED PHYSICS LETTERS, 120 (16)
April 2022
Herausgeber: AIP Publishing
ISSN: 0003-6951
The influence of threading dislocations propagating through an AlGaN UVC LED
APPLIED PHYSICS LETTERS, 120 (16)
April 2022
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English]
Zwicker,
Paula;
Schleusener,
Johannes;
Lohan,
Silke B.;
Busch,
Loris;
Sicher,
Claudia;
Einfeldt,
Sven;
Kneissl,
Michael;
Kühl,
Anja A.;
Keck,
Cornelia M.;
Witzel,
Christian;
Kramer,
Axel;
Meinke,
Martina C.
Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models
SCIENTIFIC REPORTS, 12 (1)
Februar 2022
Herausgeber: NATURE PORTFOLIO
ISSN: 2045-2322
Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models
SCIENTIFIC REPORTS, 12 (1)
Februar 2022
Herausgeber: NATURE PORTFOLIO
ISSN: 2045-2322
[English]
Meneghini,
Matteo;
Piva,
Francesco;
De Santi,
Carlo;
Trivellin,
Nicola;
Buffolo,
Matteo;
Roccato,
Nicola;
Brescancin,
Riccardo;
Grigoletto,
Massimo;
Fiorimonte,
Davide;
Einfeldt,
Sven;
Glaab,
Johannes;
Ruschel,
Jan;
Susilo,
Norman;
Wernicke,
Tim;
Kneissl,
Michael;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico
UV LED reliability: degradation mechanisms and challenges
In Fujioka, H and Morkoc, H and Schwarz, UT, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XVIIBand12001ausProceedings of SPIE
In Fujioka, H and Morkoc, H and Schwarz, UT, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2022
UV LED reliability: degradation mechanisms and challenges
In Fujioka, H and Morkoc, H and Schwarz, UT, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XVIIBand12001ausProceedings of SPIE
In Fujioka, H and Morkoc, H and Schwarz, UT, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2022
- ISBN
- 978-1-5106-4874-6; 978-1-5106-4873-9
[English]
Muhin,
Anton;
Guttmann,
Martin;
Montag,
Verena;
Susilo,
Norman;
Ziffer,
Eviathar;
Sulmoni,
Luca;
Hagedorn,
Sylvia;
Lobo-Ploch,
Neysha;
Rass,
Jens;
Cancellara,
Leonardo;
Wu,
Shaojun;
Wernicke,
Tim;
Kneissl,
Michael
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2022
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2022
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Glaab,
J.;
Ruschel,
J.;
Lobo Ploch,
N.;
Cho,
H. K.;
Mehnke,
F.;
Sulmoni,
L.;
Guttmann,
M.;
Wernicke,
T.;
Weyers,
M.;
Einfeldt,
S.;
Kneissl,
M.
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
JOURNAL OF APPLIED PHYSICS, 131 (1)
Januar 2022
Herausgeber: AIP Publishing
ISSN: 0021-8979
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
JOURNAL OF APPLIED PHYSICS, 131 (1)
Januar 2022
Herausgeber: AIP Publishing
ISSN: 0021-8979
2021
[English]
Roemer,
Friedhard;
Guttmann,
Martin;
Wernicke,
Tim;
Kneissl,
Michael;
Witzigmann,
Bernd
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
MATERIALS, 14 (24)
Dezember 2021
Herausgeber: MDPI
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
MATERIALS, 14 (24)
Dezember 2021
Herausgeber: MDPI
[English]
Guttmann,
Martin;
Susilo,
Anna;
Sulmoni,
Luca;
Susilo,
Norman;
Ziffer,
Eviathar;
Wernicke,
Tim;
Kneissl,
Michael
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54 (33)
August 2021
Herausgeber: IOP Publishing Ltd
ISSN: 0022-3727
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54 (33)
August 2021
Herausgeber: IOP Publishing Ltd
ISSN: 0022-3727
[English]
Spasevski,
Lucia;
Buse,
Ben;
Edwards,
Paul R.;
Hunter,
Daniel A.;
Enslin,
Johannes;
Foronda,
Humberto M.;
Wernicke,
Tim;
Mehnke,
Frank;
Parbrook,
Peter J.;
Kneissl,
Michael;
Martin,
Robert W.
Quantification of Trace-Level Silicon Doping in AlxGa1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis
MICROSCOPY AND MICROANALYSIS, 27 (4) :696-704
August 2021
Herausgeber: CAMBRIDGE UNIV PRESS
ISSN: 1431-9276
Quantification of Trace-Level Silicon Doping in AlxGa1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis
MICROSCOPY AND MICROANALYSIS, 27 (4) :696-704
August 2021
Herausgeber: CAMBRIDGE UNIV PRESS
ISSN: 1431-9276
[English]
Glaab,
Johannes;
Lobo-Ploch,
Neysha;
Cho,
Hyun Kyong;
Filler,
Thomas;
Gundlach,
Heiko;
Guttmann,
Martin;
Hagedorn,
Sylvia;
Lohan,
Silke B.;
Mehnke,
Frank;
Schleusener,
Johannes;
Sicher,
Claudia;
Sulmoni,
Luca;
Wernicke,
Tim;
Wittenbecher,
Lucas;
Woggon,
Ulrike;
Zwicker,
Paula;
Kramer,
Axel;
Meinke,
Martina C.;
Kneissl,
Michael;
Weyers,
Markus;
Winterwerber,
Ulrike;
Einfeldt,
Sven
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
SCIENTIFIC REPORTS, 11 (1)
Juli 2021
Herausgeber: NATURE PORTFOLIO
ISSN: 2045-2322
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
SCIENTIFIC REPORTS, 11 (1)
Juli 2021
Herausgeber: NATURE PORTFOLIO
ISSN: 2045-2322
[English]
Mehnke,
Frank;
Kuhn,
Christian;
Guttmann,
Martin;
Sulmoni,
Luca;
Montag,
Verena;
Glaab,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
PHOTONICS RESEARCH, 9 (6) :1117-1123
Juni 2021
Herausgeber: CHINESE LASER PRESS
ISSN: 2327-9125
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
PHOTONICS RESEARCH, 9 (6) :1117-1123
Juni 2021
Herausgeber: CHINESE LASER PRESS
ISSN: 2327-9125
[English]
Feneberg,
Martin;
Romero,
Fátima;
Goldhahn,
Rüdiger;
Wernicke,
Tim;
Reich,
Christoph;
Stellmach,
Joachim;
Mehnke,
Frank;
Knauer,
Arne;
Weyers,
Markus;
Kneissl,
Michael
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
APPLIED PHYSICS LETTERS, 118 (20)
Mai 2021
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
APPLIED PHYSICS LETTERS, 118 (20)
Mai 2021
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Freier,
Erik;
Glaab,
Johannes;
Ruschel,
Jan;
Hoffmann,
Veit;
Kang,
Ji Hye;
Norman-Reiner,
Maria;
Wenzel,
Hans;
Kneissl,
Michael;
Einfeldt,
Sven
Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device's operating voltage
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54 (13)
April 2021
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device's operating voltage
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54 (13)
April 2021
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English]
Hjort,
Filip;
Enslin,
Johannes;
Cobet,
Munise;
Bergmann,
Michael A.;
Gustavsson,
Johan;
Kolbe,
Tim;
Knauer,
Arne;
Nippert,
Felix;
Häusler,
Ines;
Wagner,
Markus R.;
Wernicke,
Tim;
Kneissl,
Michael;
Haglund,
Åsa
A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
ACS PHOTONICS, 8 (1) :135-141
Januar 2021
Herausgeber: AMER CHEMICAL SOC
ISSN: 2330-4022
A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
ACS PHOTONICS, 8 (1) :135-141
Januar 2021
Herausgeber: AMER CHEMICAL SOC
ISSN: 2330-4022
[English]
Kneissl,
M.;
Cardinali,
G.;
Enslin,
J.;
Guttmann,
M.;
Kuhn,
C.;
Mehnke,
F.;
Schilling,
M.;
Sulmoni,
L.;
Susilo,
N.;
Wernicke,
T.;
Cho,
H. K.;
Glaab,
J.;
Ruschel,
J.;
Hagedorn,
S.;
Lobo-Ploch,
N.;
Netzel,
C.;
Rass,
J.;
Walde,
S.;
Winterwerber,
U.;
Einfeldt,
S.;
Weyers,
M.
Advances towards deep-UV light emitting diode technologies
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC)
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2021
Advances towards deep-UV light emitting diode technologies
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC)
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2021
- ISBN
- 978-1-6654-1876-8
2020
[English]
Amano,
Hiroshi;
Collazo,
Ramón;
Santi,
Carlo De;
Einfeldt,
Sven;
Funato,
Mitsuru;
Glaab,
Johannes;
Hagedorn,
Sylvia;
Hirano,
Akira;
Hirayama,
Hideki;
Ishii,
Ryota;
Kashima,
Yukio;
Kawakami,
Yoichi;
Kirste,
Ronny;
Kneissl,
Michael;
Martin,
Robert;
Mehnke,
Frank;
Meneghini,
Matteo;
Ougazzaden,
Abdallah;
Parbrook,
Peter J.;
Rajan,
Siddharth;
Reddy,
Pramod;
Roemer,
Friedhard;
Ruschel,
Jan;
Sarkar,
Biplab;
Scholz,
Ferdinand;
Schowalter,
Leo J.;
Shields,
Philip;
Sitar,
Zlatko;
Sulmoni,
Luca;
Wang,
Tao;
Wernicke,
Tim;
Weyers,
Markus;
Witzigmann,
Bernd;
Wu,
Yuh-Renn;
Wunderer,
Thomas;
Zhang,
Yuewei
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (50)
Dezember 2020
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (50)
Dezember 2020
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English]
Muhin,
A.;
Guttmann,
M.;
Kuhn,
C.;
Mickein,
E.;
Aparici,
J. R.;
Ziffer,
E.;
Susilo,
N.;
Sulmoni,
L.;
Wernicke,
T.;
Kneissl,
M.
Vertical conductivity and Poole-Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction
APPLIED PHYSICS LETTERS, 117 (25)
Dezember 2020
Herausgeber: AIP Publishing
ISSN: 0003-6951
Vertical conductivity and Poole-Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction
APPLIED PHYSICS LETTERS, 117 (25)
Dezember 2020
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English]
Ruschel,
Jan;
Glaab,
Johannes;
Susilo,
Norman;
Hagedorn,
Sylvia;
Walde,
Sebastian;
Ziffer,
Eviathar;
Cho,
Hyun Kyong;
Ploch,
Neysha Lobo;
Wernicke,
Tim;
Weyers,
Markus;
Einfeldt,
Sven;
Kneissl,
Michael
Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
APPLIED PHYSICS LETTERS, 117 (24)
Dezember 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
APPLIED PHYSICS LETTERS, 117 (24)
Dezember 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Foronda,
Humberto M.;
Hunter,
Daniel A.;
Pietsch,
Mike;
Sulmoni,
Luca;
Muhin,
Anton;
Graupeter,
Sarina;
Susilo,
Norman;
Schilling,
Marcel;
Enslin,
Johannes;
Irmscher,
Klaus;
Martin,
Robert W.;
Wernicke,
Tim;
Kneissl,
Michael
Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
APPLIED PHYSICS LETTERS, 117 (22)
November 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
APPLIED PHYSICS LETTERS, 117 (22)
November 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Prozheev,
I.;
Mehnke,
F.;
Wernicke,
T.;
Kneissl,
M.;
Tuomisto,
F.
Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
APPLIED PHYSICS LETTERS, 117 (14)
Oktober 2020
Herausgeber: AIP Publishing
ISSN: 0003-6951
Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
APPLIED PHYSICS LETTERS, 117 (14)
Oktober 2020
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English]
Witzigmann,
Bernd;
Roemer,
Friedhard;
Martens,
Martin;
Kuhn,
Christian;
Wernicke,
Tim;
Kneissl,
Michael
Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
AIP ADVANCES, 10 (9)
September 2020
Herausgeber: AMER INST PHYSICS
Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
AIP ADVANCES, 10 (9)
September 2020
Herausgeber: AMER INST PHYSICS
[English]
Cho,
H. K.;
Kang,
J. H.;
Sulmoni,
L.;
Kunkel,
K.;
Rass,
J.;
Susilo,
N.;
Wernicke,
T.;
Einfeldt,
S.;
Kneissl,
M.
Low resistance n-contact for UVC LEDs by a two-step plasma etching process
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35 (9)
September 2020
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
Low resistance n-contact for UVC LEDs by a two-step plasma etching process
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35 (9)
September 2020
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English]
Lobo-Ploch,
Neysha;
Mehnke,
Frank;
Sulmoni,
Luca;
Cho,
Hyun Kyong;
Guttmann,
Martin;
Glaab,
Johannes;
Hilbrich,
Katrin;
Wernicke,
Tim;
Einfeldt,
Sven;
Kneissl,
Michael
Milliwatt power 233nm AlGaN-based deep UV-LEDs on sapphire substrates
APPLIED PHYSICS LETTERS, 117 (11)
September 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Milliwatt power 233nm AlGaN-based deep UV-LEDs on sapphire substrates
APPLIED PHYSICS LETTERS, 117 (11)
September 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Sulmoni,
Luca;
Mehnke,
Frank;
Mogilatenko,
Anna;
Guttmann,
Martin;
Wernicke,
Tim;
Kneissl,
Michael
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
PHOTONICS RESEARCH, 8 (8) :1381-1387
August 2020
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
PHOTONICS RESEARCH, 8 (8) :1381-1387
August 2020
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English]
Cho,
Hyun Kyong;
Susilo,
Norman;
Guttmann,
Martin;
Rass,
Jens;
Ostermay,
Ina;
Hagedorn,
Sylvia;
Ziffer,
Eviathar;
Wernicke,
Tim;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact
IEEE PHOTONICS TECHNOLOGY LETTERS, 32 (14) :891-894
Juli 2020
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact
IEEE PHOTONICS TECHNOLOGY LETTERS, 32 (14) :891-894
Juli 2020
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Hagedorn,
Sylvia;
Walde,
Sebastian;
Knauer,
Arne;
Susilo,
Norman;
Pacak,
Daniel;
Cancellara,
Leonardo;
Netzel,
Carsten;
Mogilatenko,
Anna;
Hartmann,
Carsten;
Wernicke,
Tim;
Kneissl,
Michael;
Weyers,
Markus
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217 (14, SI)
Juli 2020
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217 (14, SI)
Juli 2020
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Trager-Cowan,
C.;
Alasmari,
A.;
Avis,
W.;
Bruckbauer,
J.;
Edwards,
P. R.;
Ferenczi,
G.;
Hourahine,
B.;
Kotzai,
A.;
Kraeusel,
S.;
Kusch,
G.;
Martin,
R. W.;
McDermott,
R.;
Naresh-Kumar,
G.;
Nouf-Allehiani,
M.;
Pascal,
E.;
Thomson,
D.;
Vespucci,
S.;
Smith,
M. D.;
Parbrook,
P. J.;
Enslin,
J.;
Mehnke,
F.;
Kuhn,
C.;
Wernicke,
T.;
Kneissl,
M.;
Hagedorn,
S.;
Knauer,
A.;
Walde,
S.;
Weyers,
M.;
Coulon,
P-M;
Shields,
P. A.;
Bai,
J.;
Gong,
Y.;
Jiu,
L.;
Zhang,
Y.;
Smith,
R. M.;
Wang,
T.;
Winkelmann,
A.
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35 (5)
Mai 2020
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35 (5)
Mai 2020
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English]
Susilo,
Norman;
Ziffer,
Eviathar;
Hagedorn,
Sylvia;
Cancellara,
Leonardo;
Netzel,
Carsten;
Ploch,
Neysha Lobo;
Wu,
Shaojun;
Rass,
Jens;
Walde,
Sebastian;
Sulmoni,
Luca;
Guttmann,
Martin;
Wernicke,
Tim;
Albrecht,
Martin;
Weyers,
Markus;
Kneissl,
Michael
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
PHOTONICS RESEARCH, 8 (4) :589-594
April 2020
Herausgeber: CHINESE LASER PRESS
ISSN: 2327-9125
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
PHOTONICS RESEARCH, 8 (4) :589-594
April 2020
Herausgeber: CHINESE LASER PRESS
ISSN: 2327-9125
[English]
Hagedorn,
Sylvia;
Walde,
Sebastian;
Susilo,
Norman;
Netzel,
Carsten;
Tillner,
Nadine;
Unger,
Ralph-Stephan;
Manley,
Phillip;
Ziffer,
Eviathar;
Wernicke,
Tim;
Becker,
Christiane;
Lugauer,
Hans-Juergen;
Kneissl,
Michael;
Weyers,
Markus
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217 (7, SI)
April 2020
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217 (7, SI)
April 2020
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Bergmann,
Michael A.;
Enslin,
Johannes;
Hjort,
Filip;
Wernicke,
Tim;
Kneissl,
Michael;
Haglund,
Åsa
Thin-film flip-chip UVB LEDs realized by electrochemical etching
APPLIED PHYSICS LETTERS, 116 (12)
März 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Thin-film flip-chip UVB LEDs realized by electrochemical etching
APPLIED PHYSICS LETTERS, 116 (12)
März 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Freytag,
Stefan;
Winkler,
Michael;
Goldhahn,
Ruediger;
Wernicke,
Tim;
Rychetsky,
Monir;
Koslow,
Ingrid L.;
Kneissl,
Michael;
Dinh,
Duc;
Corbett,
Brian;
Parbrook,
Peter J.;
Feneberg,
Martin
Polarization fields in semipolar (20(1)over-bar(1)over-bar) and (20(2)over-bar1) InGaN light emitting diodes
APPLIED PHYSICS LETTERS, 116 (6)
Februar 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Polarization fields in semipolar (20(1)over-bar(1)over-bar) and (20(2)over-bar1) InGaN light emitting diodes
APPLIED PHYSICS LETTERS, 116 (6)
Februar 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Kang,
Ji Hye;
Wenzel,
Hans;
Freier,
Erik;
Hoffmann,
Veit;
Brox,
Olaf;
Fricke,
Joerg;
Sulmoni,
Luca;
Matalla,
Mathias;
Stoelmacker,
Christoph;
Kneissl,
Michael;
Weyers,
Markus;
Einfeldt,
Sven
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
OPTICS LETTERS, 45 (4) :935-938
Februar 2020
Herausgeber: OPTICAL SOC AMER
ISSN: 0146-9592
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
OPTICS LETTERS, 45 (4) :935-938
Februar 2020
Herausgeber: OPTICAL SOC AMER
ISSN: 0146-9592
[English]
Walde,
S.;
Hagedorn,
S.;
Coulon,
P. -M.;
Mogilatenko,
A.;
Netzel,
C.;
Weinrich,
J.;
Susilo,
N.;
Ziffer,
E.;
Matiwe,
L.;
Hartmann,
C.;
Kusch,
G.;
Alasmari,
A.;
Naresh-Kumar,
G.;
Trager-Cowan,
C.;
Wernicke,
T.;
Straubinger,
T.;
Bickermann,
M.;
Martin,
R. W.;
Shields,
P. A.;
Kneissl,
M.;
Weyers,
M.
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 531
Februar 2020
Herausgeber: ELSEVIER
ISSN: 0022-0248
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 531
Februar 2020
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Lee,
Da-Hoon;
Kang,
Daesung;
Seong,
Tae-Yeon;
Kneissl,
Michael;
Amano,
Hiroshi
Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (4)
Januar 2020
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (4)
Januar 2020
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English]
Trager-Cowan,
C.;
Alasmari,
A.;
Avis,
W.;
Bruckbauer,
J.;
Edwards,
P. R.;
Hourahine,
B.;
Kraeusel,
S.;
Kusch,
G.;
Jablon,
B. M.;
Johnston,
R.;
Martin,
R. W.;
McDermott,
R.;
Naresh-Kumar,
G.;
Nouf-Allehiani,
M.;
Pascal,
E.;
Thomson,
D.;
Vespucci,
S.;
Mingard,
K.;
Parbrook,
P. J.;
Smith,
M. D.;
Enslin,
J.;
Mehnke,
F.;
Kneissl,
M.;
Kuhn,
C.;
Wernicke,
T.;
Knauer,
A.;
Hagedorn,
S.;
Walde,
S.;
Weyers,
M.;
Coulon,
P-M;
Shields,
P. A.;
Zhang,
Y.;
Jiu,
L.;
Gong,
Y.;
Smith,
R. M.;
Wang,
T.;
Winkelmann,
A.
Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
, EMAS 2019 WORKSHOP - 16TH EUROPEAN WORKSHOP ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSISBand891ausIOP Conference Series-Materials Science and Engineering
Herausgeber: IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
2020
Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
, EMAS 2019 WORKSHOP - 16TH EUROPEAN WORKSHOP ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSISBand891ausIOP Conference Series-Materials Science and Engineering
Herausgeber: IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
2020
2019
[English]
Ren,
Fan;
Mishra,
Kailash C.;
Amano,
Hiroshi;
Collins,
John;
Han,
Jung;
Im,
Won Bin;
Kneissl,
Michael;
Seong,
Tae-Yeon;
Setlur,
Anant;
Suski,
Tadek;
Zych,
Eugeniusz
Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (1)
Dezember 2019
Herausgeber: ELECTROCHEMICAL SOC INC
ISSN: 2162-8769
Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (1)
Dezember 2019
Herausgeber: ELECTROCHEMICAL SOC INC
ISSN: 2162-8769
[English]
Enslin,
Johannes;
Knauer,
Arne;
Mogilatenko,
Anna;
Mehnke,
Frank;
Martens,
Martin;
Kuhn,
Christian;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Determination of Sapphire Off-Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216 (24)
Dezember 2019
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Determination of Sapphire Off-Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216 (24)
Dezember 2019
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Coulon,
Pierre-Marie;
Damilano,
Benjamin;
Alloing,
Blandine;
Chausse,
Pierre;
Walde,
Sebastian;
Enslin,
Johannes;
Armstrong,
Robert;
Vézian,
Stéphane;
Hagedorn,
Sylvia;
Wernicke,
Tim;
Massies,
Jean;
Zuniga-Perez,
Jesus;
Weyers,
Markus;
Kneissl,
Michael;
Shields,
Philip A.
Displacement Talbot lithography for nano-engineering of III-nitride materials
MICROSYSTEMS & NANOENGINEERING, 5
Dezember 2019
Herausgeber: NATURE PUBLISHING GROUP
ISSN: 2055-7434
Displacement Talbot lithography for nano-engineering of III-nitride materials
MICROSYSTEMS & NANOENGINEERING, 5
Dezember 2019
Herausgeber: NATURE PUBLISHING GROUP
ISSN: 2055-7434
[English]
Trager-Cowan,
C.;
Alasmari,
A.;
Avis,
W.;
Bruckbauer,
J.;
Edwards,
P. R.;
Hourahine,
B.;
Kraeusel,
S.;
Kusch,
G.;
Johnston,
R.;
Naresh-Kumar,
G.;
Martin,
R. W.;
Nouf-Allehiani,
M.;
Pascal,
E.;
Spasevski,
L.;
Thomson,
D.;
Vespucci,
S.;
Parbrook,
P. J.;
Smith,
M. D.;
Enslin,
J.;
Mehnke,
F.;
Kneissl,
M.;
Kuhn,
C.;
Wernicke,
T.;
Hagedorn,
S.;
Knauer,
A.;
Kueller,
V.;
Walde,
S.;
Weyers,
M.;
Coulon,
P. -M.;
Shields,
P. A.;
Zhang,
Y.;
Jiu,
L.;
Gong,
Y.;
Smith,
R. M.;
Wang,
T.;
Winkelmann,
A.
Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
PHOTONICS RESEARCH, 7 (11) :B73-B82
November 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
PHOTONICS RESEARCH, 7 (11) :B73-B82
November 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English]
Kolbe,
Tim;
Knauer,
Arne;
Enslin,
Johannes;
Hagedorn,
Sylvia;
Mogilatenko,
Anna;
Wernicke,
Tim;
Kneissl,
Michael;
Weyers,
Markus
Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes
JOURNAL OF CRYSTAL GROWTH, 526
November 2019
Herausgeber: ELSEVIER
ISSN: 0022-0248
Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes
JOURNAL OF CRYSTAL GROWTH, 526
November 2019
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Kim,
Ho-Young;
Lee,
Jong Woo;
Moon,
Young Min;
Oh,
Jeong Tak;
Jeong,
Hwan-Hee;
Song,
June-O;
Seong,
Tae-Yeon;
Kneissl,
Michael;
Amano,
Hiroshi
Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (1)
November 2019
Herausgeber: ELECTROCHEMICAL SOC INC
ISSN: 2162-8769
Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (1)
November 2019
Herausgeber: ELECTROCHEMICAL SOC INC
ISSN: 2162-8769
[English]
Kang,
Daesung;
Oh,
Jeong-Tak;
Song,
June-O;
Seong,
Tae-Yeon;
Kneissl,
Michael;
Amano,
Hiroshi
Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application
APPLIED PHYSICS EXPRESS, 12 (10)
Oktober 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 1882-0778
Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application
APPLIED PHYSICS EXPRESS, 12 (10)
Oktober 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 1882-0778
[English]
Bergmann,
Michael A.;
Enslin,
Johannes;
Yapparov,
Rinat;
Hjort,
Filip;
Wickman,
Björn;
Marcinkevičius,
Saulius;
Wernicke,
Tim;
Kneissl,
Michael;
Haglund,
Åsa
Electrochemical etching of AlGaN for the realization of thin-film devices
APPLIED PHYSICS LETTERS, 115 (18)
Oktober 2019
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Electrochemical etching of AlGaN for the realization of thin-film devices
APPLIED PHYSICS LETTERS, 115 (18)
Oktober 2019
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Monti,
Desiree;
De Santi,
Carlo;
Da Ruos,
Silvia;
Piva,
Francesco;
Glaab,
Johannes;
Rass,
Jens;
Einfeldt,
Sven;
Mehnke,
Frank;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico;
Meneghini,
Matteo
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8) :3387-3392
August 2019
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8) :3387-3392
August 2019
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
[English]
Guttmann,
Martin;
Hoepfner,
Jakob;
Reich,
Christoph;
Sulmoni,
Luca;
Kuhn,
Christian;
Roeder,
Pascal;
Wernicke,
Tim;
Kneissl,
Michael
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (8)
August 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (8)
August 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Ruschel,
Jan;
Glaab,
Johannes;
Beidoun,
Batoul;
Ploch,
Neysha Lobo;
Rass,
Jens;
Kolbe,
Tim;
Knauer,
Arne;
Weyers,
Markus;
Einfeldt,
Sven;
Kneissl,
Michael
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
PHOTONICS RESEARCH, 7 (7) :B36-B40
Juli 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
PHOTONICS RESEARCH, 7 (7) :B36-B40
Juli 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English]
Enslin,
Johannes;
Wernicke,
Tim;
Lobanova,
Anna;
Kusch,
Gunnar;
Spasevski,
Lucia;
Teke,
Tolga;
Belde,
Bettina;
Martin,
Robert W.;
Talalaev,
Roman;
Kneissl,
Michael
Indium incorporation in quaternary InxAlyGa1-x-yN for UVB-LEDs
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Indium incorporation in quaternary InxAlyGa1-x-yN for UVB-LEDs
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Kusch,
Gunnar;
Enslin,
Johannes;
Spasevski,
Lucia;
Teke,
Tolga;
Wernicke,
Tim;
Edwards,
Paul R.;
Kneissl,
Michael;
Martin,
Robert W.
Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Guttmann,
Martin;
Mehnke,
Frank;
Belde,
Bettina;
Wolf,
Fynn;
Reich,
Christoph;
Sulmoni,
Luca;
Wernicke,
Tim;
Kneissl,
Michael
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Susilo,
Norman;
Schilling,
Marcel;
Narodovitch,
Michael;
Yao,
Hsin-Hung;
Li,
Xiaohang;
Witzigmann,
Bernd;
Enslin,
Johannes;
Guttmann,
Martin;
Roumeliotis,
Georgios G.;
Rychetsky,
Monir;
Koslow,
Ingrid;
Wernicke,
Tim;
Niermann,
Tore;
Lehmann,
Michael;
Kneissl,
Michael
Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Foronda,
Humberto Miguel;
Graupeter,
Sarina;
Mehnke,
Frank;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael
Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Kuhn,
Christian;
Sulmoni,
Luca;
Guttmann,
Martin;
Glaab,
Johannes;
Susilo,
Norman;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
PHOTONICS RESEARCH, 7 (5) :B7-B11
Mai 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
PHOTONICS RESEARCH, 7 (5) :B7-B11
Mai 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English]
Glaab,
J.;
Ruschel,
J.;
Kolbe,
T.;
Knauer,
A.;
Rass,
J.;
Cho,
H. K.;
Ploch,
N. Lobo;
Kreutzmann,
S.;
Einfeldt,
S.;
Weyers,
M.;
Kneissl,
M.
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (7) :529-532
April 2019
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (7) :529-532
April 2019
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Kneissl,
Michael;
Seong,
Tae-Yeon;
Han,
Jung;
Amano,
Hiroshi
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
NATURE PHOTONICS, 13 (4) :233-244
April 2019
Herausgeber: NATURE PUBLISHING GROUP
ISSN: 1749-4885
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
NATURE PHOTONICS, 13 (4) :233-244
April 2019
Herausgeber: NATURE PUBLISHING GROUP
ISSN: 1749-4885
[English]
Mehnke,
Frank;
Sulmoni,
Luca;
Guttmann,
Martin;
Wernicke,
Tim;
Kneissl,
Michael
Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
APPLIED PHYSICS EXPRESS, 12 (1)
Januar 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 1882-0778
Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
APPLIED PHYSICS EXPRESS, 12 (1)
Januar 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 1882-0778
[English]
Roemer,
Friedhard;
Witzigmann,
Bernd;
Guttmann,
Martin;
Susilo,
Norman;
Wernicke,
Tim;
Kneissl,
Michael
Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes
In Witzigmann, B and Osinski, M and Arakawa, Y, Editor, PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVIIBand10912ausProceedings of SPIE
In Witzigmann, B and Osinski, M and Arakawa, Y, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2019
Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes
In Witzigmann, B and Osinski, M and Arakawa, Y, Editor, PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVIIBand10912ausProceedings of SPIE
In Witzigmann, B and Osinski, M and Arakawa, Y, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2019
- ISBN
- 978-1-5106-2467-2
2018
[English]
Susilo,
Norman;
Roumeliotis,
Georgios G.;
Narodovitch,
Michael;
Witzigmann,
Bernd;
Rychetsky,
Monir;
Neugebauer,
Silvio;
Guttmann,
Martin;
Enslin,
Johannes;
Dadgar,
Armin;
Niermann,
Tore;
Wernicke,
Tim;
Strittmatter,
Andre;
Lehmann,
Michael;
Papadimitriou,
Dimitra N.;
Kneissl,
Michael
Accurate determination of polarization fields in (0001) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (48)
Dezember 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
Accurate determination of polarization fields in (0001) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (48)
Dezember 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English]
Cho,
Hyun Kyong;
Kuelberg,
Alex;
Ploch,
Neysha Lobo;
Rass,
Jens;
Ruschel,
Jan;
Kolbe,
Tim;
Knauer,
Ma;
Braun,
Andrea;
Krueger,
Olaf;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (20) :1792-1794
Oktober 2018
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (20) :1792-1794
Oktober 2018
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Kuhn,
Christian;
Martens,
Martin;
Mehnke,
Frank;
Enslin,
Johannes;
Schneider,
Peter;
Reich,
Christoph;
Krueger,
Felix;
Rass,
Jens;
Park,
Jae Bum;
Kueller,
Viola;
Knauer,
Arne;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (41)
Oktober 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (41)
Oktober 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English]
Glaab,
Johannes;
Ruschel,
Jan;
Mehnke,
Frank;
Lapeyrade,
Mickael;
Guttmann,
Martin;
Wernicke,
Tim;
Weyers,
Markus;
Einfeldt,
Sven;
Kneissl,
Michael
Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9)
September 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9)
September 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Ruschel,
J.;
Glaab,
J.;
Brendel,
M.;
Rass,
J.;
Stoelmacker,
C.;
Lobo-Ploch,
N.;
Kolbe,
T.;
Wernicke,
T.;
Mehnke,
F.;
Enslin,
J.;
Einfeldt,
S.;
Weyers,
M.;
Kneissl,
M.
Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
JOURNAL OF APPLIED PHYSICS, 124 (8)
August 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
JOURNAL OF APPLIED PHYSICS, 124 (8)
August 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Nippert,
Felix;
Mazraehno,
Mohammad Tollabi;
Davies,
Matthew J.;
Hoffmann,
Marc P.;
Lugauer,
Hans-Juergen;
Kure,
Thomas;
Kneissl,
Michael;
Hoffmann,
Axel;
Wagner,
Markus R.
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
APPLIED PHYSICS LETTERS, 113 (7)
August 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
APPLIED PHYSICS LETTERS, 113 (7)
August 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Kuhn,
Christian;
Simoneit,
Tino;
Martens,
Martin;
Markurt,
Toni;
Enslin,
Johannes;
Mehnke,
Frank;
Bellmann,
Konrad;
Schulz,
Tobias;
Albrecht,
Martin;
Wernicke,
Tim;
Kneissl,
Michael
MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (13)
Juli 2018
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (13)
Juli 2018
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Susilo,
Norman;
Enslin,
Johannes;
Sulmoni,
Luca;
Guttmann,
Martin;
Zeimer,
Ute;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (10, SI)
Mai 2018
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (10, SI)
Mai 2018
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Glaab,
Johannes;
Haefke,
Joscha;
Ruschel,
Jan;
Brendel,
Moritz;
Rass,
Jens;
Kolbe,
Tim;
Knauer,
Arne;
Weyers,
Markus;
Einfeldt,
Sven;
Guttmann,
Martin;
Kuhn,
Christian;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael
Degradation effects of the active region in UV-C light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 123 (10)
März 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Degradation effects of the active region in UV-C light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 123 (10)
März 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Jeschke,
J.;
Martens,
M.;
Hagedorn,
S.;
Knauer,
A.;
Mogilatenko,
A.;
Wenzel,
H.;
Zeimer,
U.;
Enslin,
J.;
Wernicke,
T.;
Kneissl,
M.;
Weyers,
M.
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (3)
März 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (3)
März 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Mounir,
Christian;
Koslow,
Ingrid L.;
Wernicke,
Tim;
Kneissl,
Michael;
Kuritzky,
Leah Y.;
Adamski,
Nicholas L.;
Oh,
Sang Ho;
Pynn,
Christopher D.;
DenBaars,
Steven P.;
Nakamura,
Shuji;
Speck,
James S.;
Schwarz,
Ulrich T.
On the optical polarization properties of semipolar (20(2)over-bar1) and (20(2)over-bar(1)over-bar) InGaN/GaN quantum wells
JOURNAL OF APPLIED PHYSICS, 123 (8)
Februar 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
On the optical polarization properties of semipolar (20(2)over-bar1) and (20(2)over-bar(1)over-bar) InGaN/GaN quantum wells
JOURNAL OF APPLIED PHYSICS, 123 (8)
Februar 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Kang,
Ji Hye;
Wenzel,
Hans;
Hoffmann,
Veit;
Freier,
Erik;
Sulmoni,
Luca;
Unger,
Ralph-Stephan;
Einfeldt,
Sven;
Wernicke,
Tim;
Kneissl,
Michael
DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings
IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (3) :231-234
Februar 2018
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings
IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (3) :231-234
Februar 2018
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Muhin,
Anton;
Guttmann,
Martin;
Wernicke,
Tim;
Kneissl,
Michael
AlGaN multi-quantum barriers for electron blocking in group III-nitride devices
In Piprek, J and Djurisic, AB, Editor, 2018 18TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2018)ausInternational Conference on Numerical Simulation of Optoelectronic Devices, Seite 21-22
In Piprek, J and Djurisic, AB, Editor
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2018
AlGaN multi-quantum barriers for electron blocking in group III-nitride devices
In Piprek, J and Djurisic, AB, Editor, 2018 18TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2018)ausInternational Conference on Numerical Simulation of Optoelectronic Devices, Seite 21-22
In Piprek, J and Djurisic, AB, Editor
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2018
- ISBN
- 978-1-5386-5599-3
[English]
Kang,
J. H.;
Wenzel,
H.;
Hoffmann,
V;
Freier,
E.;
Sulmoni,
L.;
Unger,
R-S;
Einfeldt,
S.;
Wernicke,
T.;
Kneissl,
M.
10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings
In Belyanin, AA and Smowton, PM, Editor, NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIIBand10553ausProceedings of SPIE
In Belyanin, AA and Smowton, PM, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2018
10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings
In Belyanin, AA and Smowton, PM, Editor, NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIIBand10553ausProceedings of SPIE
In Belyanin, AA and Smowton, PM, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2018
- ISBN
- 978-1-5106-1592-2; 978-1-5106-1591-5
[English]
Monti,
D.;
Meneghini,
M.;
De Santi,
C.;
Da Ruos,
S.;
Meneghesso,
G.;
Zanoni,
E.;
Glaab,
J.;
Rass,
J.;
Einfeldt,
S.;
Mehnke,
F.;
Enslin,
J.;
Wernicke,
T.;
Kneissl,
M.
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress
In Kim, JK and Krames, MR and Strassburg, M and Tu, LW, Editor, LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXIIBand10554ausProceedings of SPIE
In Kim, JK and Krames, MR and Strassburg, M and Tu, LW, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2018
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress
In Kim, JK and Krames, MR and Strassburg, M and Tu, LW, Editor, LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXIIBand10554ausProceedings of SPIE
In Kim, JK and Krames, MR and Strassburg, M and Tu, LW, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2018
- ISBN
- 978-1-5106-1594-6
[English]
Susilo,
Norman;
Hagedorn,
Sylvia;
Jaeger,
Dominik;
Miyake,
Hideto;
Zeimer,
Ute;
Reich,
Christoph;
Neuschulz,
Bettina;
Sulmoni,
Luca;
Guttmann,
Martin;
Mehnke,
Frank;
Kuhn,
Christian;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
APPLIED PHYSICS LETTERS, 112 (4)
Januar 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
APPLIED PHYSICS LETTERS, 112 (4)
Januar 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
2017
[English]
Cho,
H. K.;
Krueger,
O.;
Kuelberg,
A.;
Rass,
J.;
Zeimer,
U.;
Kolbe,
T.;
Knauer,
A.;
Einfeldt,
S.;
Weyers,
M.;
Kneissl,
M.
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (12)
Dezember 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (12)
Dezember 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Kolbe,
Tim;
Knauer,
Arne;
Rass,
Jens;
Cho,
Hyun Kyong;
Hagedorn,
Sylvia;
Einfeldt,
Sven;
Kneissl,
Michael;
Weyers,
Markus
Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
MATERIALS, 10 (12)
Dezember 2017
Herausgeber: MDPI AG
ISSN: 1996-1944
Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
MATERIALS, 10 (12)
Dezember 2017
Herausgeber: MDPI AG
ISSN: 1996-1944
[English]
Cho,
Hyun Kyong;
Ostermay,
Ina;
Zeimer,
Ute;
Enslin,
Johannes;
Wernicke,
Tim;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
IEEE PHOTONICS TECHNOLOGY LETTERS, 29 (24) :2222-2225
Dezember 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
IEEE PHOTONICS TECHNOLOGY LETTERS, 29 (24) :2222-2225
Dezember 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Bellmann,
Konrad;
Pohl,
Udo W.;
Kuhn,
Christian;
Wernicke,
Tim;
Kneissl,
Michael
Controlling the morphology transition between step-flow growth and step-bunching growth
JOURNAL OF CRYSTAL GROWTH, 478 :187-192
November 2017
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Controlling the morphology transition between step-flow growth and step-bunching growth
JOURNAL OF CRYSTAL GROWTH, 478 :187-192
November 2017
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Lapeyrade,
Mickael;
Alamé,
Sabine;
Glaab,
Johannes;
Mogilatenko,
Anna;
Unger,
Ralph-Stephan;
Kuhn,
Christian;
Wernicke,
Tim;
Vogt,
Patrick;
Knauer,
Arne;
Zeimer,
Ute;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
Effect of Cl-2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
JOURNAL OF APPLIED PHYSICS, 122 (12)
September 2017
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Effect of Cl-2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
JOURNAL OF APPLIED PHYSICS, 122 (12)
September 2017
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Pristovsek,
Markus;
Bellman,
Konrad;
Mehnke,
Frank;
Stellmach,
Joachim;
Wernicke,
Tim;
Kneissl,
Michael
Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254 (8)
August 2017
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254 (8)
August 2017
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
De Santi,
Carlo;
Meneghini,
Matteo;
Monti,
Desiree;
Glaab,
Johannes;
Guttmann,
Martin;
Rass,
Jens;
Einfeldt,
Sven;
Mehnke,
Frank;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
PHOTONICS RESEARCH, 5 (2) :A44-A51
April 2017
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
PHOTONICS RESEARCH, 5 (2) :A44-A51
April 2017
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English]
Lapeyrade,
Mickael;
Glaab,
Johannes;
Knauer,
Arne;
Kuhn,
Christian;
Enslin,
Johannes;
Reich,
Christoph;
Guttmann,
Martin;
Mehnke,
Frank;
Wernicke,
Tim;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
Design considerations for AlGaN-based UV LEDs emitting near 235nm with uniform emission pattern
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (4)
April 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Design considerations for AlGaN-based UV LEDs emitting near 235nm with uniform emission pattern
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (4)
April 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Enslin,
Johannes;
Mehnke,
Frank;
Mogilatenko,
Anna;
Bellmann,
Konrad;
Guttmann,
Martin;
Kuhn,
Christian;
Rass,
Jens;
Lobo-Ploch,
Neysha;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
JOURNAL OF CRYSTAL GROWTH, 464 :185-189
April 2017
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
JOURNAL OF CRYSTAL GROWTH, 464 :185-189
April 2017
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Kusch,
Gunnar;
Mehnke,
Frank;
Enslin,
Johannes;
Edwards,
Paul R.;
Wernicke,
Tim;
Kneissl,
Michael;
Martin,
Robert W.
Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (3)
März 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (3)
März 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Mehnke,
Frank;
Guttmann,
Martin;
Enslin,
Johannes;
Kuhn,
Christian;
Reich,
Christoph;
Jordan,
Jakob;
Kapanke,
Simon;
Knauer,
Arne;
Lapeyrade,
Mickael;
Zeimer,
Ute;
Kreuger,
Hendrik;
Rabe,
Marian;
Einfeldt,
Sven;
Wernicke,
Tim;
Ewald,
Hartmut;
Weyers,
Markus;
Kneissl,
Michael
Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 23 (2)
März 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1077-260X
Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 23 (2)
März 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1077-260X
[English]
Martens,
M.;
Kuhn,
C.;
Simoneit,
T.;
Hagedorn,
S.;
Knauer,
A.;
Wernicke,
T.;
Weyers,
M.;
Kneissl,
M.
The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
APPLIED PHYSICS LETTERS, 110 (8)
Februar 2017
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
APPLIED PHYSICS LETTERS, 110 (8)
Februar 2017
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Monti,
Desiree;
Meneghini,
Matteo;
De Santi,
Carlo;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico;
Glaab,
Johannes;
Rass,
Jens;
Einfeldt,
Sven;
Mehnke,
Frank;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael
Defect-Related Degradation of AlGaN-Based UV-B LEDs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (1) :200-205
Januar 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
Defect-Related Degradation of AlGaN-Based UV-B LEDs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (1) :200-205
Januar 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
[English]
Kang,
Ji Hye;
Martens,
Martin;
Wenzel,
Hans;
Hoffmann,
Veit;
John,
Wilfred;
Einfeldt,
Sven;
Wernicke,
Tim;
Kneissl,
Michael
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
IEEE PHOTONICS TECHNOLOGY LETTERS, 29 (1) :138-141
Januar 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
IEEE PHOTONICS TECHNOLOGY LETTERS, 29 (1) :138-141
Januar 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Kneissl,
Michael;
Rass,
Jens;
Schade,
Lukas;
Schwarz,
Ulrich T.
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
In Seong, TY and Han, J and Amano, H and Morkoc, H, Editor, III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION Band 133 aus Topics in Applied Physics
Seite 93-128
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2017
93-128
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
In Seong, TY and Han, J and Amano, H and Morkoc, H, Editor, III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION Band 133 aus Topics in Applied Physics
Seite 93-128
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2017
93-128
- ISBN
- 978-981-10-3755-9; 978-981-10-3754-2
[English]
Monti,
Desiree;
Meneghini,
Matteo;
De Santi,
Carlo;
Meneghesso,
Gaudenzio;
Zanoni,
Enrico;
Glaab,
Johannes;
Rass,
Jens;
Einfeldt,
Sven;
Mehnke,
Frank;
Wernicke,
Tim;
Kneissl,
Michael
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
In Kim, JK and Krames, MR and Tu, LW and Strassburg, M, Editor, LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXIBand10124ausProceedings of SPIE
In Kim, JK and Krames, MR and Tu, LW and Strassburg, M, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2017
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
In Kim, JK and Krames, MR and Tu, LW and Strassburg, M, Editor, LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXIBand10124ausProceedings of SPIE
In Kim, JK and Krames, MR and Tu, LW and Strassburg, M, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2017
- ISBN
- 978-1-5106-0689-0; 978-1-5106-0690-6
2016
[English]
Alamé,
Sabine;
Quezada,
Andrea Navarro;
Skuridina,
Dania;
Reich,
Christoph;
Henning,
Dimitri;
Frentrup,
Martin;
Wernicke,
Tim;
Koslow,
Ingrid;
Kneissl,
Michael;
Esser,
Norbert;
Vogt,
Patrick
Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 55 (SI) :7-11
November 2016
Herausgeber: ELSEVIER SCI LTD
ISSN: 1369-8001
Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 55 (SI) :7-11
November 2016
Herausgeber: ELSEVIER SCI LTD
ISSN: 1369-8001
[English]
Minj,
A.;
Skuridina,
D.;
Cavalcoli,
D.;
Cros,
A.;
Vogt,
P.;
Kneissl,
M.;
Giesen,
C.;
Heuken,
M.
Surface properties of AlInGaN/GaN heterostructure
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 55 (SI) :26-31
November 2016
Herausgeber: ELSEVIER SCI LTD
ISSN: 1369-8001
Surface properties of AlInGaN/GaN heterostructure
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 55 (SI) :26-31
November 2016
Herausgeber: ELSEVIER SCI LTD
ISSN: 1369-8001
[English]
Dinh,
Duc V.;
Corbett,
Brian;
Parbrook,
Peter J.;
Koslow,
Ingrid. L.;
Rychetsky,
Monir;
Guttmann,
Martin;
Wernicke,
Tim;
Kneissl,
Michael;
Mounir,
Christian;
Schwarz,
Ulrich;
Glaab,
Johannes;
Netzel,
Carsten;
Brunner,
Frank;
Weyers,
Markus
Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 120 (13)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 120 (13)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Mehnke,
Frank;
Trinh,
Xuan Thang;
Pingel,
Harald;
Wernicke,
Tim;
Janzén,
Erik;
Son,
Nguyen Tien;
Kneissl,
Michael
Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%
JOURNAL OF APPLIED PHYSICS, 120 (14)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%
JOURNAL OF APPLIED PHYSICS, 120 (14)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Tabataba-Vakili,
Farsane;
Wunderer,
Thomas;
Kneissl,
Michael;
Yang,
Zhihong;
Teepe,
Mark;
Batres,
Max;
Feneberg,
Martin;
Vancil,
Bernard;
Johnson,
Noble M.
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
APPLIED PHYSICS LETTERS, 109 (18)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
APPLIED PHYSICS LETTERS, 109 (18)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Kang,
Ji Hye;
Krueger,
Olaf;
Spengler,
Uwe;
Zeimer,
Ute;
Einfeldt,
Sven;
Kneissl,
Michael
On the formation of cleaved mirror facets of GaN-based laser diodes-A comparative study of diamond-tip edge-scribing and laser scribing
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34 (4)
Juli 2016
Herausgeber: A V S AMER INST PHYSICS
ISSN: 2166-2746
On the formation of cleaved mirror facets of GaN-based laser diodes-A comparative study of diamond-tip edge-scribing and laser scribing
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34 (4)
Juli 2016
Herausgeber: A V S AMER INST PHYSICS
ISSN: 2166-2746
[English]
Mounir,
Christian;
Schwarz,
Ulrich T.;
Koslow,
Ingrid L.;
Kneissl,
Michael;
Wernicke,
Tim;
Schimpke,
Tilman;
Strassburg,
Martin
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells
PHYSICAL REVIEW B, 93 (23)
Juni 2016
Herausgeber: AMER PHYSICAL SOC
ISSN: 2469-9950
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells
PHYSICAL REVIEW B, 93 (23)
Juni 2016
Herausgeber: AMER PHYSICAL SOC
ISSN: 2469-9950
[English]
Knauer,
Arne;
Mogilatenko,
Anna;
Hagedorn,
Silvia;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael;
Weyers,
Markus
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AIN (vol 253, pg 809, 2016)
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (6) :1228
Juni 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AIN (vol 253, pg 809, 2016)
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (6) :1228
Juni 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
Knauer,
Arne;
Mogilatenko,
Anna;
Hagedorn,
Silvia;
Enslin,
Johannes;
Wernicke,
Tim;
Kneissl,
Michael;
Weyers,
Markus
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (5) :809-813
Mai 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (5) :809-813
Mai 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
Martens,
M.;
Kuhn,
C.;
Ziffer,
E.;
Simoneit,
T.;
Kueller,
V.;
Knauer,
A.;
Rass,
J.;
Wernicke,
T.;
Einfeldt,
S.;
Weyers,
M.;
Kneissl,
M.
Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
APPLIED PHYSICS LETTERS, 108 (15)
April 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
APPLIED PHYSICS LETTERS, 108 (15)
April 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Rychetsky,
Monir;
Koslow,
Ingrid;
Avinc,
Baran;
Rass,
Jens;
Wernicke,
Tim;
Bellmann,
Konrad;
Sulmoni,
Luca;
Hoffmann,
Veit;
Weyers,
Markus;
Wild,
Johannes;
Zweck,
Josef;
Witzigmann,
Bernd;
Kneissl,
Michael
Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements
JOURNAL OF APPLIED PHYSICS, 119 (9)
März 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements
JOURNAL OF APPLIED PHYSICS, 119 (9)
März 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Leute,
Robert A. R.;
Heinz,
Dominik;
Wang,
Junjun;
Meisch,
Tobias;
Mueller,
Marcus;
Schmidt,
Gordon;
Metzner,
Sebastian;
Veit,
Peter;
Bertram,
Frank;
Christen,
Juergen;
Martens,
Martin;
Wernicke,
Tim;
Kneissl,
Michael;
Jenisch,
Stefan;
Strehle,
Steffen;
Rettig,
Oliver;
Thonke,
Klaus;
Scholz,
Ferdinand
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :180-185
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :180-185
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
Rychetsky,
M.;
Koslow,
I. L.;
Wernicke,
T.;
Rass,
J.;
Hoffmann,
V.;
Weyers,
M.;
Kneissl,
M.
Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :169-173
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :169-173
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
Kolbe,
T.;
Stellmach,
J.;
Mehnke,
F.;
Rothe,
M. -A.;
Kueller,
V.;
Knauer,
A.;
Einfeldt,
S.;
Wernicke,
T.;
Weyers,
M.;
Kneissl,
M.
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213 (1) :210-214
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213 (1) :210-214
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Glaab,
Johannes;
Ploch,
Neysha Lobo;
Rass,
Jens;
Kolbe,
Tim;
Wernicke,
Tim;
Mehnke,
Frank;
Kuhn,
Christian;
Enslin,
Johannes;
Stoelmacker,
Christoph;
Kueller,
Viola;
Knauer,
Arne;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
Influence of the LED heterostructure on the degradation behavior of (InAlGa) N-based UV-B LEDs
In Chyi, JI and Fujioka, H and Morkoc, H and Nanishi, Y and Schwarz, UT and Shim, JI, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XIBand9748ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H and Nanishi, Y and Schwarz, UT and Shim, JI, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2016
Influence of the LED heterostructure on the degradation behavior of (InAlGa) N-based UV-B LEDs
In Chyi, JI and Fujioka, H and Morkoc, H and Nanishi, Y and Schwarz, UT and Shim, JI, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XIBand9748ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H and Nanishi, Y and Schwarz, UT and Shim, JI, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2016
- ISBN
- 978-1-62841-983-2
[English]
Dinh,
Duc V.;
Pristovsek,
Markus;
Kneissl,
Michael
MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :93-98
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :93-98
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
Schade,
L.;
Wernicke,
T.;
Rass,
J.;
Ploch,
S.;
Weyers,
M.;
Kneissl,
M.;
Schwarz,
U. T.
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :145-157
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :145-157
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English]
Elmlinger,
Philipp;
Schreivogel,
Martin;
Schmid,
Marc;
Kaiser,
Myriam;
Priester,
Roman;
Sonstroem,
Patrick;
Kneissl,
Michael
Comparision of fabrication methods for microstructured deep UV multimode waveguides based on fused silica
In Thienpont, H and Mohr, J and Zappe, H and Nakajima, H, Editor, MICRO-OPTICS 2016Band9888ausProceedings of SPIE
In Thienpont, H and Mohr, J and Zappe, H and Nakajima, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2016
Comparision of fabrication methods for microstructured deep UV multimode waveguides based on fused silica
In Thienpont, H and Mohr, J and Zappe, H and Nakajima, H, Editor, MICRO-OPTICS 2016Band9888ausProceedings of SPIE
In Thienpont, H and Mohr, J and Zappe, H and Nakajima, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2016
- ISBN
- 978-1-5106-0133-8
[English]
Kneissl,
Michael
A Brief Review of III-Nitride UV Emitter Technologies and Their Applications
In Kneissl, M and Rass, J, Editor, III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS Band 227 aus Springer Series in Materials Science
Seite 1-25
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2016
1-25
A Brief Review of III-Nitride UV Emitter Technologies and Their Applications
In Kneissl, M and Rass, J, Editor, III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS Band 227 aus Springer Series in Materials Science
Seite 1-25
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2016
1-25
- ISBN
- 978-3-319-24100-5; 978-3-319-24098-5
[English]
Kneissl,
Michael;
Rass,
Jens
III-Nitride Ultraviolet Emitters Technology and Applications Preface
In Kneissl, M and Rass, J, Editor, III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS Band 227 aus Springer Series in Materials Science
Seite V-VII
Editorial Material; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2016
V-VII
III-Nitride Ultraviolet Emitters Technology and Applications Preface
In Kneissl, M and Rass, J, Editor, III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS Band 227 aus Springer Series in Materials Science
Seite V-VII
Editorial Material; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2016
V-VII
- ISBN
- 978-3-319-24100-5; 978-3-319-24098-5
2015
[English]
Zeimer,
Ute;
Jeschke,
Joerg;
Mogilatenko,
Anna;
Knauer,
Arne;
Kueller,
Viola;
Hoffmann,
Veit;
Kuhn,
Christian;
Simoneit,
Tino;
Martens,
Martin;
Wernicke,
Tim;
Kneissl,
Michael;
Weyers,
Markus
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11)
November 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11)
November 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Mogilatenko,
A.;
Enslin,
J.;
Knauer,
A.;
Mehnke,
F.;
Bellmann,
K.;
Wernicke,
T.;
Weyers,
M.;
Kneissl,
M.
V-pit to truncated pyramid transition in AlGaN-based heterostructures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11)
November 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
V-pit to truncated pyramid transition in AlGaN-based heterostructures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11)
November 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Reich,
Christoph;
Guttmann,
Martin;
Feneberg,
Martin;
Wernicke,
Tim;
Mehnke,
Frank;
Kuhn,
Christian;
Rass,
Jens;
Lapeyrade,
Mickael;
Einfeldt,
Sven;
Knauer,
Arne;
Kueller,
Viola;
Weyers,
Markus;
Goldhahn,
Ruediger;
Kneissl,
Michael
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
APPLIED PHYSICS LETTERS, 107 (14)
Oktober 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
APPLIED PHYSICS LETTERS, 107 (14)
Oktober 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Glaab,
Johannes;
Ploch,
Christian;
Kelz,
Rico;
Stoelmacker,
Christoph;
Lapeyrade,
Mickael;
Ploch,
Neysha Lobo;
Rass,
Jens;
Kolbe,
Tim;
Einfeldt,
Sven;
Mehnke,
Frank;
Kuhn,
Christian;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
JOURNAL OF APPLIED PHYSICS, 118 (9)
September 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
JOURNAL OF APPLIED PHYSICS, 118 (9)
September 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Bellmann,
Konrad;
Tabataba-Vakili,
Farsane;
Wernicke,
Tim;
Strittmatter,
Andre;
Callsen,
Gordon;
Hoffmann,
Axel;
Kneissl,
Michael
Desorption induced GaN quantum dots on (0001) AlN by MOVPE
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 9 (9) :526-529
September 2015
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6254
Desorption induced GaN quantum dots on (0001) AlN by MOVPE
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 9 (9) :526-529
September 2015
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6254
[English]
Jeschke,
Joerg;
Martens,
Martin;
Knauer,
Arne;
Kueller,
Viola;
Zeimer,
Ute;
Netzel,
Carsten;
Kuhn,
Christian;
Krueger,
Felix;
Reich,
Christoph;
Wernicke,
Tim;
Kneissl,
Michael;
Weyers,
Markus
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
IEEE PHOTONICS TECHNOLOGY LETTERS, 27 (18) :1969-1972
September 2015
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
IEEE PHOTONICS TECHNOLOGY LETTERS, 27 (18) :1969-1972
September 2015
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Kusch,
Gunnar;
Nouf-Allehiani,
M.;
Mehnke,
Frank;
Kuhn,
Christian;
Edwards,
Paul R.;
Wernicke,
Tim;
Knauer,
Arne;
Kueller,
Viola;
Naresh-Kumar,
G.;
Weyers,
Markus;
Kneissl,
Michael;
Trager-Cowan,
Carol;
Martin,
Robert W.
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
APPLIED PHYSICS LETTERS, 107 (7)
August 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
APPLIED PHYSICS LETTERS, 107 (7)
August 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Redaelli,
Luca;
Wenzel,
Hans;
Piprek,
Joachim;
Weig,
Thomas;
Einfeldt,
Sven;
Martens,
Martin;
Luekens,
Gerrit;
Schwarz,
Ulrich T.;
Kneissl,
Michael
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
IEEE JOURNAL OF QUANTUM ELECTRONICS, 51 (8)
August 2015
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9197
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
IEEE JOURNAL OF QUANTUM ELECTRONICS, 51 (8)
August 2015
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9197
[English]
Hoffmann,
V.;
Mogilatenko,
A.;
Zeimer,
U.;
Einfeldt,
S.;
Weyers,
M.;
Kneissl,
M.
In-situ observation of InGaN quantum well decomposition during growth of laser diodes
CRYSTAL RESEARCH AND TECHNOLOGY, 50 (6) :499-503
Juni 2015
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0232-1300
In-situ observation of InGaN quantum well decomposition during growth of laser diodes
CRYSTAL RESEARCH AND TECHNOLOGY, 50 (6) :499-503
Juni 2015
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0232-1300
[English]
Mehnke,
Frank;
Kuhn,
Christian;
Stellmach,
Joachim;
Kolbe,
Tim;
Lobo-Ploch,
Neysha;
Rass,
Jens;
Rothe,
Mark-Antonius;
Reich,
Christoph;
Ledentsov,
Nikolay;
Pristovsek,
Markus;
Wernicke,
Tim;
Kneissl,
Michael
Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes
JOURNAL OF APPLIED PHYSICS, 117 (19)
Mai 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes
JOURNAL OF APPLIED PHYSICS, 117 (19)
Mai 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Papadimitriou,
D.;
Roupakas,
G.;
Sáez-Araoz,
R.;
Lux-Steiner,
M-Ch;
Nickel,
N. H.;
Alamé,
S.;
Vogt,
P.;
Kneissl,
M.
Quality CuInSe2 and Cu(In,Ga)Se-2 thin films processed by single-step electrochemical deposition techniques
MATERIALS RESEARCH EXPRESS, 2 (5)
Mai 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 2053-1591
Quality CuInSe2 and Cu(In,Ga)Se-2 thin films processed by single-step electrochemical deposition techniques
MATERIALS RESEARCH EXPRESS, 2 (5)
Mai 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 2053-1591
[English]
Feneberg,
Martin;
Winkler,
Michael;
Klamser,
Juliane;
Stellmach,
Joachim;
Frentrup,
Martin;
Ploch,
Simon;
Mehnke,
Frank;
Wernicke,
Tim;
Kneissl,
Michael;
Goldhahn,
Ruediger
Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
APPLIED PHYSICS LETTERS, 106 (18)
Mai 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
APPLIED PHYSICS LETTERS, 106 (18)
Mai 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Hatui,
Nirupam;
Frentrup,
Martin;
Rahman,
A. Azizur;
Kadir,
Abdul;
Subramanian,
Shruti;
Kneissl,
Michael;
Bhattacharya,
Arnab
MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55)
JOURNAL OF CRYSTAL GROWTH, 411 :106-109
Februar 2015
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55)
JOURNAL OF CRYSTAL GROWTH, 411 :106-109
Februar 2015
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Li,
Xiao-Hang;
Detchprohm,
Theeradetch;
Dupuis,
Russell D.;
Kao,
Tsung-Ting;
Shen,
Shyh-Chiang;
Satter,
Md. Mahbub;
Yoder,
P. Douglas;
Wang,
Shuo;
Wei,
Yong O.;
Xie,
Hongen;
Fischer,
Alec;
Ponce,
Fernando A.;
Wernicke,
Tim;
Reich,
Christof;
Martens,
Martin;
Kneissl,
Michael
III-nitride deep UV laser on sapphire substrate
2015 PHOTONICS CONFERENCE (IPC)ausIEEE Photonics Conference
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2015
III-nitride deep UV laser on sapphire substrate
2015 PHOTONICS CONFERENCE (IPC)ausIEEE Photonics Conference
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2015
- ISBN
- 978-1-4799-7465-8
[English]
Rass,
Jens;
Kolbe,
Tim;
Ploch,
Neysha Lobo;
Wernicke,
Tim;
Mehnke,
Frank;
Kuhn,
Christian;
Enslin,
Johannes;
Guttmann,
Martin;
Reich,
Christoph;
Mogilatenko,
Anna;
Glaab,
Johannes;
Stoelmacker,
Christoph;
Lapeyrade,
Mickael;
Einfeldt,
Sven;
Weyers,
Markus;
Kneissl,
Michael
High power UV-B LEDs with long lifetime
In Chyi, JI and Fujioka, H and Morkoc, H, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XBand9363ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2015
High power UV-B LEDs with long lifetime
In Chyi, JI and Fujioka, H and Morkoc, H, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XBand9363ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2015
- ISBN
- 978-1-62841-453-0
[English]
Lapeyrade,
Mickael;
Eberspach,
Florian;
Glaab,
Johannes;
Lobo-Ploch,
Neysha;
Reich,
Christoph;
Kuhn,
Christian;
Guttmann,
Martin;
Wernicke,
Tim;
Mehnke,
Frank;
Einfeldt,
Sven;
Knauer,
Arne;
Weyers,
Markus;
Kneissl,
Michael
Current spreading in UV-C LEDs emitting around 235 nm
In Chyi, JI and Fujioka, H and Morkoc, H, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XBand9363ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2015
Current spreading in UV-C LEDs emitting around 235 nm
In Chyi, JI and Fujioka, H and Morkoc, H, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XBand9363ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2015
- ISBN
- 978-1-62841-453-0
2014
[English]
Naresh-Kumar,
G.;
Vilalta-Clemente,
A.;
Pandey,
S.;
Skuridina,
D.;
Behmenburg,
H.;
Gamarra,
P.;
Patriarche,
G.;
Vickridge,
I.;
Forte-Poisson,
M. A.;
Vogt,
P.;
Kneissl,
M.;
Morales,
M.;
Ruterana,
P.;
Cavallini,
A.;
Cavalcoli,
D.;
Giesen,
C.;
Heuken,
M.;
Trager-Cowan,
C.
Multicharacterization approach for studying InAl(Ga) N/Al(Ga) N/GaN heterostructures for high electron mobility transistors
AIP ADVANCES, 4 (12)
Dezember 2014
Herausgeber: AMER INST PHYSICS
Multicharacterization approach for studying InAl(Ga) N/Al(Ga) N/GaN heterostructures for high electron mobility transistors
AIP ADVANCES, 4 (12)
Dezember 2014
Herausgeber: AMER INST PHYSICS
[English]
Friede,
Sebastian;
Kuehn,
Sergei;
Tomm,
Jens W.;
Hoffmann,
Veit;
Zeimer,
Ute;
Weyers,
Markus;
Kneissl,
Michael;
Elsaesser,
Thomas
Nano-optical analysis of GaN-based diode lasers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (11)
November 2014
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Nano-optical analysis of GaN-based diode lasers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (11)
November 2014
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Li,
Xiao-Hang;
Detchprohm,
Theeradetch;
Kao,
Tsung-Ting;
Satter,
Md. Mahbub;
Shen,
Shyh-Chiang;
Yoder,
P. Douglas;
Dupuis,
Russell D.;
Wang,
Shuo;
Wei,
Yong O.;
Xie,
Hongen;
Fischer,
Alec M.;
Ponce,
Fernando A.;
Wernicke,
Tim;
Reich,
Christoph;
Martens,
Martin;
Kneissl,
Michael
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
APPLIED PHYSICS LETTERS, 105 (14)
Oktober 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
APPLIED PHYSICS LETTERS, 105 (14)
Oktober 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Jeschke,
J.;
Zeimer,
U.;
Redaelli,
L.;
Einfeldt,
S.;
Kneissl,
M.;
Weyers,
M.
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In)GaN laser diodes
APPLIED PHYSICS LETTERS, 105 (17)
Oktober 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In)GaN laser diodes
APPLIED PHYSICS LETTERS, 105 (17)
Oktober 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Park,
J. B.;
Niermann,
T.;
Berger,
D.;
Knauer,
A.;
Koslow,
I.;
Weyers,
M.;
Kneissl,
M.;
Lehmann,
M.
Impact of electron irradiation on electron holographic potentiometry
APPLIED PHYSICS LETTERS, 105 (9)
September 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Impact of electron irradiation on electron holographic potentiometry
APPLIED PHYSICS LETTERS, 105 (9)
September 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Mehnke,
Frank;
Kuhn,
Christian;
Guttmann,
Martin;
Reich,
Christoph;
Kolbe,
Tim;
Kueller,
Viola;
Knauer,
Arne;
Lapeyrade,
Mickael;
Einfeldt,
Sven;
Rass,
Jens;
Wernicke,
Tim;
Weyers,
Markus;
Kneissl,
Michael
Efficient charge carrier injection into sub-250nm AlGaN multiple quantum well light emitting diodes
APPLIED PHYSICS LETTERS, 105 (5)
August 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Efficient charge carrier injection into sub-250nm AlGaN multiple quantum well light emitting diodes
APPLIED PHYSICS LETTERS, 105 (5)
August 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Mogilatenko,
A.;
Kirmse,
H.;
Stellmach,
J.;
Frentrup,
M.;
Mehnke,
E.;
Wernicke,
T.;
Kneissl,
M.;
Weyers,
M.
Analysis of crystal orientation in AIN layers grown on m-plane sapphire
JOURNAL OF CRYSTAL GROWTH, 400 :54-60
August 2014
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Analysis of crystal orientation in AIN layers grown on m-plane sapphire
JOURNAL OF CRYSTAL GROWTH, 400 :54-60
August 2014
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Skuridina,
D.;
Dinh,
D. V.;
Pristovsek,
M.;
Lacroix,
B.;
Chauvat,
M. -P.;
Ruterana,
P.;
Kneissl,
M.;
Vogt,
P.
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
APPLIED SURFACE SCIENCE, 307 :461-467
Juli 2014
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0169-4332
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
APPLIED SURFACE SCIENCE, 307 :461-467
Juli 2014
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0169-4332
[English]
Schade,
L.;
Wernicke,
T.;
Rass,
J.;
Ploch,
S.;
Weyers,
M.;
Kneissl,
M.;
Schwarz,
U. T.
Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 211 (4) :756-760
April 2014
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 211 (4) :756-760
April 2014
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Hoffmann,
V.;
Mogilatenko,
A.;
Netzel,
C.;
Zeimer,
U.;
Einfeldt,
S.;
Weyers,
M.;
Kneissl,
M.
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
JOURNAL OF CRYSTAL GROWTH, 391 :46-51
April 2014
Herausgeber: ELSEVIER
ISSN: 0022-0248
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
JOURNAL OF CRYSTAL GROWTH, 391 :46-51
April 2014
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Netzel,
Carsten;
Stellmach,
Joachim;
Feneberg,
Martin;
Frentrup,
Martin;
Winkler,
Michael;
Mehnke,
Frank;
Wernicke,
Tim;
Goldhahn,
Ruediger;
Kneissl,
Michael;
Weyers,
Markus
Polarization of photoluminescence emission from semi-polar (11-22) AlGaN layers
APPLIED PHYSICS LETTERS, 104 (5)
Februar 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Polarization of photoluminescence emission from semi-polar (11-22) AlGaN layers
APPLIED PHYSICS LETTERS, 104 (5)
Februar 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Martens,
Martin;
Mehnke,
Frank;
Kuhn,
Christian;
Reich,
Chirstoph;
Kueller,
Viola;
Knauer,
Arne;
Netzel,
Carsten;
Hartmann,
Carsten;
Wollweber,
Juergen;
Rass,
Jens;
Wernicke,
Tim;
Bickermann,
Matthias;
Weyers,
Markus;
Kneissl,
Michael
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
IEEE PHOTONICS TECHNOLOGY LETTERS, 26 (4) :342-345
Februar 2014
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
IEEE PHOTONICS TECHNOLOGY LETTERS, 26 (4) :342-345
Februar 2014
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
2013
[English]
Frentrup,
Martin;
Hatui,
Nirupam;
Wernicke,
Tim;
Stellmach,
Joachim;
Bhattacharya,
Arnab;
Kneissl,
Michael
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
JOURNAL OF APPLIED PHYSICS, 114 (21)
Dezember 2013
Herausgeber: AIP Publishing
ISSN: 0021-8979
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
JOURNAL OF APPLIED PHYSICS, 114 (21)
Dezember 2013
Herausgeber: AIP Publishing
ISSN: 0021-8979
[English]
Lapeyrade,
Mickael;
Muhin,
Anton;
Einfeldt,
Sven;
Zeimer,
Ute;
Mogilatenko,
Anna;
Weyers,
Markus;
Kneissl,
Michael
Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12)
Dezember 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12)
Dezember 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Ploch,
N. Lobo;
Einfeldt,
S.;
Frentrup,
M.;
Rass,
J.;
Wernicke,
T.;
Knauer,
A.;
Kueller,
V.;
Weyers,
M.;
Kneissl,
M.
Investigation of the temperature dependent efficiency droop in UV LEDs
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12)
Dezember 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Investigation of the temperature dependent efficiency droop in UV LEDs
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12)
Dezember 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Skuridina,
D.;
Dinh,
D. V.;
Lacroix,
B.;
Ruterana,
P.;
Hoffmann,
M.;
Sitar,
Z.;
Pristovsek,
M.;
Kneissl,
M.;
Vogt,
P.
Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy
JOURNAL OF APPLIED PHYSICS, 114 (17)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy
JOURNAL OF APPLIED PHYSICS, 114 (17)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Reich,
Christoph;
Feneberg,
Martin;
Kueller,
Viola;
Knauer,
Arne;
Wernicke,
Tim;
Schlegel,
Jessica;
Frentrup,
Martin;
Goldhahn,
Ruediger;
Weyers,
Markus;
Kneissl,
Michael
Excitonic recombination in epitaxial lateral overgrown AIN on sapphire
APPLIED PHYSICS LETTERS, 103 (21)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Excitonic recombination in epitaxial lateral overgrown AIN on sapphire
APPLIED PHYSICS LETTERS, 103 (21)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Mehnke,
Frank;
Wernicke,
Tim;
Pingel,
Harald;
Kuhn,
Christian;
Reich,
Christoph;
Kueller,
Viola;
Knauer,
Arne;
Lapeyrade,
Mickael;
Weyers,
Markus;
Kneissl,
Michael
Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
APPLIED PHYSICS LETTERS, 103 (21)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
APPLIED PHYSICS LETTERS, 103 (21)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Redaelli,
L.;
Wenzel,
H.;
Martens,
M.;
Einfeldt,
S.;
Kneissl,
M.;
Traenkle,
G.
Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
JOURNAL OF APPLIED PHYSICS, 114 (11)
September 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
JOURNAL OF APPLIED PHYSICS, 114 (11)
September 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Rass,
Jens;
Ploch,
Simon;
Wernicke,
Tim;
Frentrup,
Martin;
Weyers,
Markus;
Kneissl,
Michael
Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Pristovsek,
Markus;
Kadir,
Abdul;
Kneissl,
Michael
Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Dinh,
Duc V.;
Solopow,
Sergej;
Pristovsek,
Markus;
Kneissl,
Michael
Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Schlegel,
Jessica;
Brendel,
Moritz;
Martens,
Martin;
Knigge,
Andrea;
Rass,
Jens;
Einfeldt,
Sven;
Brunner,
Frank;
Weyers,
Markus;
Kneissl,
Michael
Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English]
Zeimer,
U.;
Kueller,
V.;
Knauer,
A.;
Mogilatenko,
A.;
Weyers,
M.;
Kneissl,
M.
High quality AlGaN grown on ELO AlN/sapphire templates
JOURNAL OF CRYSTAL GROWTH, 377 :32-36
August 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
High quality AlGaN grown on ELO AlN/sapphire templates
JOURNAL OF CRYSTAL GROWTH, 377 :32-36
August 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Dinh,
Duc V.;
Skuridina,
D.;
Solopow,
S.;
Pristovsek,
M.;
Vogt,
P.;
Kneissl,
M.
Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 376 :17-22
August 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 376 :17-22
August 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Redaelli,
Luca;
Muhin,
Anton;
Einfeldt,
Sven;
Wolter,
Peter;
Weixelbaum,
Leonhard;
Kneissl,
Michael
Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing
IEEE PHOTONICS TECHNOLOGY LETTERS, 25 (13) :1278-1281
Juli 2013
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing
IEEE PHOTONICS TECHNOLOGY LETTERS, 25 (13) :1278-1281
Juli 2013
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Kolbe,
T.;
Mehnke,
F.;
Guttmann,
M.;
Kuhn,
C.;
Rass,
J.;
Wernicke,
T.;
Kneissl,
M.
Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure
APPLIED PHYSICS LETTERS, 103 (3)
Juli 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure
APPLIED PHYSICS LETTERS, 103 (3)
Juli 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Pristovsek,
Markus;
Kadir,
Abdul;
Meissner,
Christian;
Schwaner,
Tilman;
Leyer,
Martin;
Stellmach,
Joachim;
Kneissl,
Michael;
Ivaldi,
Francesco;
Kret,
Slawomir
Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
JOURNAL OF CRYSTAL GROWTH, 372 :65-72
Juni 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
JOURNAL OF CRYSTAL GROWTH, 372 :65-72
Juni 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Pristovsek,
Markus;
Kremzow,
Raimund;
Kneissl,
Michael
Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (4)
April 2013
Herausgeber: JAPAN SOC APPLIED PHYSICS
ISSN: 0021-4922
Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (4)
April 2013
Herausgeber: JAPAN SOC APPLIED PHYSICS
ISSN: 0021-4922
[English]
Kueller,
V.;
Knauer,
A.;
Zeimer,
U.;
Kneissl,
M.;
Weyers,
M.
Controlled coalescence of MOVPE grown AlN during lateral overgrowth
JOURNAL OF CRYSTAL GROWTH, 368 :83-86
April 2013
Herausgeber: ELSEVIER
ISSN: 0022-0248
Controlled coalescence of MOVPE grown AlN during lateral overgrowth
JOURNAL OF CRYSTAL GROWTH, 368 :83-86
April 2013
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Blaesing,
Juergen;
Holý,
Vaclav;
Dadgar,
Armin;
Veit,
Peter;
Christen,
Juergen;
Ploch,
Simon;
Frentrup,
Martin;
Wernicke,
Tim;
Kneissl,
Michael;
Krost,
Alois
Growth and characterization of stacking fault reduced GaN( 1 0 1(\$)over-bar 3) on sapphire
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46 (12)
März 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
Growth and characterization of stacking fault reduced GaN( 1 0 1(\$)over-bar 3) on sapphire
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46 (12)
März 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English]
Stellmach,
J.;
Mehnke,
F.;
Frentrup,
M.;
Reich,
C.;
Schlegel,
J.;
Pristovsek,
M.;
Wernicke,
T.;
Kneissl,
M.
Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 367 :42-47
März 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 367 :42-47
März 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English]
Knauer,
A.;
Kueller,
V.;
Zeimer,
U.;
Weyers,
M.;
Reich,
C.;
Kneissl,
M.
AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (3) :451-454
März 2013
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (3) :451-454
März 2013
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Ploch,
N. Lobo;
Rodriguez,
H.;
Stoelmacker,
C.;
Hoppe,
M.;
Lapeyrade,
M.;
Stellmach,
J.;
Mehnke,
F.;
Wernicke,
Tim;
Knauer,
A.;
Kueller,
V.;
Weyers,
M.;
Einfeldt,
S.;
Kneissl,
M.
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (2, SI) :782-786
Februar 2013
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (2, SI) :782-786
Februar 2013
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
[English]
Redaelli,
L.;
Wenzel,
H.;
Weig,
T.;
Luekens,
G.;
Einfeldt,
S.;
Schwarz,
U. T.;
Kneissl,
M.;
Traenkle,
G.
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)ausConference on Lasers and Electro-Optics
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2013
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)ausConference on Lasers and Electro-Optics
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2013
- ISBN
- 978-1-55752-973-2
[English]
Kneissl,
Michael;
Rass,
Jens;
Schade,
Lukas;
Schwarz,
Ulrich T.
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
In Seong, TY and Han, J and Amano, H and Morkoc, H, Editor, III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS Band 126 aus Topics in Applied Physics
Seite 83-119
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2013
83-119
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
In Seong, TY and Han, J and Amano, H and Morkoc, H, Editor, III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS Band 126 aus Topics in Applied Physics
Seite 83-119
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2013
83-119
- ISBN
- 978-94-007-5863-6; 978-94-007-5862-9
2012
[English]
Kadir,
Abdul;
Bellmann,
Konrad;
Simoneit,
Tino;
Pristovsek,
Markus;
Kneissl,
Michael
Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (12) :2487-2491
Dezember 2012
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (12) :2487-2491
Dezember 2012
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English]
Ploch,
Simon;
Wernicke,
Tim;
Frentrup,
Martin;
Pristovsek,
Markus;
Weyers,
Markus;
Kneissl,
Michael
Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN
APPLIED PHYSICS LETTERS, 101 (20)
November 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN
APPLIED PHYSICS LETTERS, 101 (20)
November 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Ploch,
Simon;
Wernicke,
Tim;
Thalmair,
Johannes;
Lohr,
Matthias;
Pristovsek,
Markus;
Zweck,
Josef;
Weyers,
Markus;
Kneissl,
Michael
Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 356 :70-74
Oktober 2012
Herausgeber: ELSEVIER
ISSN: 0022-0248
Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 356 :70-74
Oktober 2012
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Kueller,
Viola;
Knauer,
Arne;
Reich,
Christoph;
Mogilatenko,
Anna;
Weyers,
Markus;
Stellmach,
Joachim;
Wernicke,
Tim;
Kneissl,
Michael;
Yang,
Zhihong;
Chua,
Christopher L.;
Johnson,
Noble M.
Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs
IEEE PHOTONICS TECHNOLOGY LETTERS, 24 (18) :1603-1605
September 2012
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs
IEEE PHOTONICS TECHNOLOGY LETTERS, 24 (18) :1603-1605
September 2012
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English]
Stellmach,
J.;
Frentrup,
M.;
Mehnke,
F.;
Pristovsek,
M.;
Wernicke,
T.;
Kneissl,
M.
MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire
JOURNAL OF CRYSTAL GROWTH, 355 (1) :59-62
September 2012
Herausgeber: ELSEVIER
ISSN: 0022-0248
MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire
JOURNAL OF CRYSTAL GROWTH, 355 (1) :59-62
September 2012
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Friedrich,
C.;
Biermann,
A.;
Hoffmann,
V.;
Kneissl,
M.;
Esser,
N.;
Vogt,
P.
Preparation and atomic structure of reconstructed (0001) InGaN surfaces
JOURNAL OF APPLIED PHYSICS, 112 (3)
August 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Preparation and atomic structure of reconstructed (0001) InGaN surfaces
JOURNAL OF APPLIED PHYSICS, 112 (3)
August 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Debusmann,
R.;
Brauch,
U.;
Hoffmann,
V.;
Weyers,
M.;
Kneissl,
M.
Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
JOURNAL OF APPLIED PHYSICS, 112 (3)
August 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
JOURNAL OF APPLIED PHYSICS, 112 (3)
August 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Dinh,
Duc V.;
Skuridina,
D.;
Solopow,
S.;
Frentrup,
M.;
Pristovsek,
M.;
Vogt,
P.;
Kneissl,
M.;
Ivaldi,
F.;
Kret,
S.;
Szczepanska,
A.
Growth and characterizations of semipolar (11(2)over-bar2) InN
JOURNAL OF APPLIED PHYSICS, 112 (1)
Juli 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Growth and characterizations of semipolar (11(2)over-bar2) InN
JOURNAL OF APPLIED PHYSICS, 112 (1)
Juli 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Pandey,
Saurabh;
Cavalcoli,
Daniela;
Minj,
Albert;
Fraboni,
Beatrice;
Cavallini,
Anna;
Skuridina,
Daria;
Vogt,
Patrick;
Kneissl,
Michael
Mobility-limiting mechanisms in polar semiconductor heterostructures
ACTA MATERIALIA, 60 (6-7) :3176-3180
April 2012
Herausgeber: PERGAMON-ELSEVIER SCIENCE LTD
ISSN: 1359-6454
Mobility-limiting mechanisms in polar semiconductor heterostructures
ACTA MATERIALIA, 60 (6-7) :3176-3180
April 2012
Herausgeber: PERGAMON-ELSEVIER SCIENCE LTD
ISSN: 1359-6454
[English]
Ploch,
Simon;
Wernicke,
Tim;
Dinh,
Duc V.;
Pristovsek,
Markus;
Kneissl,
Michael
Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy
JOURNAL OF APPLIED PHYSICS, 111 (3)
Februar 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy
JOURNAL OF APPLIED PHYSICS, 111 (3)
Februar 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English]
Han,
Jung;
Kneissl,
Michael
Non-polar and semipolar nitride semiconductors
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2)
Februar 2012
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Non-polar and semipolar nitride semiconductors
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2)
Februar 2012
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Wernicke,
Tim;
Schade,
Lukas;
Netzel,
Carsten;
Rass,
Jens;
Hoffmann,
Veit;
Ploch,
Simon;
Knauer,
Arne;
Weyers,
Markus;
Schwarz,
Ulrich;
Kneissl,
Michael
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2)
Februar 2012
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2)
Februar 2012
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English]
Kueller,
Viola;
Knauer,
Arne;
Brunner,
Frank;
Mogilatenko,
Anna;
Kneissl,
Michael;
Weyers,
Markus
Investigation of inversion domain formation in AlN grown on sapphire by MOVPE
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 496-498
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
Investigation of inversion domain formation in AlN grown on sapphire by MOVPE
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 496-498
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
[English]
Rass,
Jens;
Wernicke,
Tim;
Ploch,
Simon;
Brendel,
Moritz;
Kruse,
Andreas;
Hangleiter,
Andreas;
Scheibenzuber,
Wolfgang;
Schwarz,
Ulrich T.;
Weyers,
Markus;
Kneissl,
Michael
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES VIIBand8262ausProceedings of SPIE
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2012
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES VIIBand8262ausProceedings of SPIE
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2012
- ISBN
- 978-0-8194-8905-0
[English]
Northrup,
J. E.;
Chua,
C. L.;
Yang,
Z.;
Wunderer,
T.;
Kneissl,
M.;
Johnson,
N. M.;
Kolbe,
T.
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
APPLIED PHYSICS LETTERS, 100 (2)
Januar 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
APPLIED PHYSICS LETTERS, 100 (2)
Januar 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Schade,
L.;
Schwarz,
U. T.;
Wernicke,
T.;
Ploch,
S.;
Weyers,
M.;
Kneissl,
M.
Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 700-703
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 700-703
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
[English]
Redaelli,
L.;
Martens,
M.;
Piprek,
J.;
Wenzel,
H.;
Netzel,
C.;
Linke,
A.;
Flores,
Y. V.;
Einfeldt,
S.;
Kneissl,
M.;
Traenkle,
G.
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES VIIBand8262ausProceedings of SPIE
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2012
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES VIIBand8262ausProceedings of SPIE
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2012
- ISBN
- 978-0-8194-8905-0
[English]
Dinh,
Duc V.;
Pristovsek,
M.;
Solopow,
S.;
Skuridina,
D.;
Kneissl,
M.
Comparison study of N- and In-polar \0001 InN layers grown by MOVPE
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 977-981
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
Comparison study of N- and In-polar \0001 InN layers grown by MOVPE
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 977-981
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
[English]
Wunderer,
T.;
Chua,
C. L.;
Northrup,
J. E.;
Yang,
Z.;
Johnson,
N. M.;
Kneissl,
M.;
Garrett,
G. A.;
Shen,
H.;
Wraback,
M.;
Moody,
B.;
Craft,
H. S.;
Schlesser,
R.;
Dalmau,
R. F.;
Sitar,
Z.
Optically pumped UV lasers grown on bulk AlN substrates
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 822-825
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
Optically pumped UV lasers grown on bulk AlN substrates
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 822-825
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
2011
[English]
Kolbe,
Tim;
Knauer,
Arne;
Chua,
Chris;
Yang,
Zhihong;
Kueller,
Viola;
Einfeldt,
Sven;
Vogt,
Patrick;
Johnson,
Noble M.;
Weyers,
Markus;
Kneissl,
Michael
Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
APPLIED PHYSICS LETTERS, 99 (26)
Dezember 2011
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
APPLIED PHYSICS LETTERS, 99 (26)
Dezember 2011
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English]
Kadir,
Abdul;
Meissner,
Christian;
Schwaner,
Tilman;
Pristovsek,
Markus;
Kneissl,
Michael
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 334 (1) :40-45
November 2011
Herausgeber: ELSEVIER
ISSN: 0022-0248
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 334 (1) :40-45
November 2011
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English]
Bruhn,
Thomas;
Ewald,
Marcel;
Fimland,
Bjorn-Ove;
Kneissl,
Michael;
Esser,
Norbert;
Vogt,
Patrick
In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001)
JOURNAL OF NANOPARTICLE RESEARCH, 13 (11, SI) :5847-5853
November 2011
Herausgeber: SPRINGER
ISSN: 1388-0764
In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001)
JOURNAL OF NANOPARTICLE RESEARCH, 13 (11, SI) :5847-5853
November 2011
Herausgeber: SPRINGER
ISSN: 1388-0764