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TU Berlin

Inhalt des Dokuments

Publikationen 2008

  1. H. Wenzel, A. Knauer, T. Kolbe and M. Kneissl, Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes, IEEE Proceedings 8th International Conference on Numerical Simulation of Optoelectronic Devices, 5 (2008).
  2. V. Hoffmann, A. Knauer, F. Brunner, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, G. Tränkle, J.M. Karaliunas, K. Kazlauskas, S. Jursenas, U. Jahn, J.R. vanLook, M. Kneissl, Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes, J. Cryst. Growth 310, 4525 (2008).
  3. M. Pristovsek, A. Philippou, B. Rähmer, W. Richter, Properties of InMnP (001) grown by MOVPE, J. Crystal Growth 310, 4046 (2008).
  4. O. Reentilä, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M. Heuken, M. Kneissl, M. Weyers, G. Tränkle. Effect of the AlN nucleation layer growth on AlN material quality, J. Cryst. Growth 310, (23), 4932 (2008).
  5. M. Pristovsek, Ch. Meißner, and M. Kneissl, R. Jakomin, S. Vantaggio, and T. Tarricone, Growth and characterization of manganese-doped InAsP, J. Cryst. Growth 310, 5028 (2008).
  6. Raimund Kremzow, M. Pristovsek, M. Kneissl, Ripening of InAs Quantum Dots on GaAs (001) investigated with in-situ Scanning Tunneling Microscopy in Metal-Organic Vapor Phase Epitaxy, J. Cryst. Growth 310, 4751 (2008).
  7. Martin Leyer, Joachim Stellmach, Christian Meissner, Markus Pristovsek, Michael Kneissl, The critical thickness of InGaN on (0001) GaN, J. Cryst. Growth 310, 4913 (2008).
  8. Michael Kneissl, Ultraviolet light-emitting diodes promise new solutions for water purification, World Water & Environmental Engineering, Vol. 31 (3), 35 (2008).
  9. Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, Structural and optical properties of non-polar GaN thin films, Appl. Phys. Lett. 92, 171904 (2008).
  10. B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, A-plane GaN ELO structures: growth domains, morphological defects, and impurity incorporation directly imaged by scanning cathodoluminescence microscopy, Appl. Phys. Lett. 92, 212111 (2008).
  11. A. Knauer, H. Wenzel, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle, Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes, Appl. Phys. Lett. 92, 191912 (2008).
  12. Christian Meissner, Simon Ploch, Martin Leyer, Markus Pristovsek and Michael Kneissl, Indium Nitride Quantum Dot growth modes in Metal-Organic Vapour Phase Epitaxy, J. Cryst. Growth 310, 4959 (2008) .
  13. Tim Wernicke, Ute Zeimer, Martin Herms, Markus Weyers, M. Kneissl, Gert Irmer, Microstructure of a-plane (2-1-10) GaN ELOG stripe patterns with different in-plane orientation, Journal of Materials Science: Materials in Electronics, Volume 19, Supplement 1 (2008), doi: 10.1007/s10854-008-9638-9.
  14. G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering, Journal of Materials Science: Materials in Electronics, Volume 19, Supplement 1 (2008), doi: 10.1007/s10854-007-9557-1.
  15. F. Brunner, H. Protzmann, M. Heuken, A. Knauer, M. Weyers, and M. Kneissl, High-temperature growth of AlN in a Production Scale 11x2" MOVPE reactor, phys. stat. sol. (c), 1 (2008).
  16. Gustavo E. Fernandes, Laurent Guyot, Grace D. Chern, Michael Kneissl, Noble M. Johnson, QingHai Song, Lei Xu, and Richard K. Chang, Wavelength and intensity switching in directly coupled semiconductor microdisk lasers, Optics Letters 33, 605 (2008).
  17. Tim Wernicke, Carsten Netzel, Markus Weyers, Michael Kneissl, Semipolar GaN grown on m-plane sapphire using MOVPE, phys. stat. sol. (c) 5, 1815 (2008).
  18. C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, and M. Kneissl, Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations, J. Cryst. Growth 310, 8 (2008).
  19. Markus Pristovsek and Wolfgang Richter, In-situ monitoring for nano-structure growth in MOVPE, in Semiconductor Nanostructures Kapitel 3, Ed: D. Bimberg, Springer-Verlag 67-86 (2008)


  1. Ulrich T. Schwarz and M. Kneissl, Nitride emitters go nonpolar, phys. stat. sol. (rapid research letters) 1, A44 (2007)

  2. Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Oliver Schmidt, Peter Kiesel, Noble M. Johnson, Sandra Schujman, and Leo J. Schowalter, Ultraviolet semiconductor laser diodes on bulk AlN, J. Appl. Phys. 101,123103 (2007)

  3. W. W. Chow, M. Kneissl, J. E. Northrup, N. M. Johnson, Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers, Appl. Phys. Lett. 90, 101116 (2007)

  4. R. Passmann, M. Kropp, T. Bruhn, B.O. Fimland, A.C. Gossard, W. Richter, N. Esser, P. Vogt, Optical anisotropy of cyclopentene terminated GaAs(001) surfaces, Appl. Phys. A 87, 469-473 (2007)

  5. G.D. Chern, G.E Fernandes, R.K. Chang, Q. Song, L. Xu, M. Kneissl, N.M. Johnson, High-Q-preserving coupling between a spiral and a semicircle m-cavity, Optics Letters 32, 1093 (2007)

  6. Ch. Kaspari, M. Pristovsek, W. Richter, Homoepitaxial growth rate measurement using in-situ Reflectance Anisotropy Spectroscopy, J. Crystal Growth 298, 46-49, 2007

  7. M. Pristovsek, B. Rähmer, M. Breusig, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, J. Crystal Growth, 298, 0, 8-11, 2007

  8. S. Weeke, M. Leyer, M. Pristovsek, F. Brunner, M. Weyers, W. Richter, Segregation and desorption of antimony in InP in MOVPE, J. Crystal Growth, 298, 0, 159-162, 2007

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