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Inhalt des Dokuments

2010

  1. C. Netzel, V. Hoffmann, T. Wernicke, A. Knauer, M. Weyers, M. Kneissl, and N. Szabo, Influence of the wave function overlap in GaInN quantum wells on the temperature and excitation power dependent photoluminescence intensity, Journal of Applied Physics 107, 033510 (2010).
  2. N. Lobo, H. Rodriguez, A. Knauer, M. Hoppe, S. Einfeldt, P. Vogt , M. Weyers and M. Kneissl, Enhancement of light extraction in UV LEDs using nanopixel contact design with Al reflector, Appl. Phys. Lett. 96, 081109 (2010) DOI: 10.1063/1.3334721.
  3. J. R. van Look, S. Einfeldt, V. Hoffmann, A. Knauer, M. Weyers, P. Vogt and M. Kneissl, Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates, IEEE Photonics Tech. Lett, vol. 22, is. 6, 416 (2010).
  4. Duc Dinh, M. Pristovsek, R. Kremzow, M. Kneissl, Growth of semipolar (10-1-3) InN on m-plane sapphire using MOVPE, Phys. stat. sol. (RRL) 4, No. 5-6, 127 (2010) / DOI 10.1002/pssr.201004043.
  5. R. Debusmann, N. Dhidah, V. Hoffmann, L. Weixelbaum, U. brauch, T. Graf, M. Weyers, M. Kneissl; InGaN/GaN Disk Laser for Blue-Violet Emission Wavelengths; IEEE Photonics Technology Letters 22 (9), 652 (2010).  
  6. U. Zeimer, U. Jahn, V. Hoffmann, M. Weyers, M. Kneissl, Optical and structural properties of InGaN/(AlIn)GaN multiple quantum wells grown at different temperatures and In supply, Journal of Electronic Materials, Vol. 39, 677 (2010).
  7. T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl, Carrier injection in InAlGaN single and multi-quantum-well ultraviolet light emitting diodes, phys. stat. sol. (c) (2010), DOI: 10.1002/pssc.200983629.
  8. T. Kolbe, T. Sembdner, A. Knauer, V. Küller, H. Rodriguez S. Einfeldt, P. Vogt, M. Weyers and M. Kneissl, (In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width, phys. stat. sol. (a) 207 (2010). DOI: 10.1002/pssa.201026046.
  9. R. Kremzow, M. Pristovsek, J. Stellmach, Ö. Savaş, M. Kneissl, Metalorganic Vapor Phase Epitaxy of InN on GaN using tertiary-butylhydrazine as Nitrogen Source, Journal of Crystal Growth (2010), DIO:10.1016/j.jcrysgro.2010.03.019.
  10. Jens Raß, Tim Wernicke, Raimund Kremzow, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers, Michael Kneissl, Facet formation for laser diodes on nonpolar and semipolar GaN, phys. stat. sol. (a) (2010), DOI 10.1002/pssa.200983425.
  11. S. Ploch, M. Frentrup, T.Wernicke, M. Pristovsek, M. Weyers, M. Kneissl, Orientation control of GaN {11-22} and {10-13} grown on (10-10) sapphire by metal-organic vapor phase epitaxy, J Cryst. Growth, 312, 2171 (2010).
  12. T. Bruhn, R. Paßmann, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface electric field at GaAs(001)-c(4x4) measured via the linear electro-optic effect, phys. stat. sol. (b) (2010).
  13. M. Pristovsek, Determination of the complex linear electro-optic coefficient of GaAs and InP, physica status solidi (b) 247, 1974-1978 (2010) DOI:10.1002/pssb.200983950.
  14. Carsten Netzel, Veit Hoffmann, Tim Wernicke, Arne Knauer, Markus Weyers, Hans Wenzel, and Michael Kneissl, Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells, phys. stat. sol. (c), 1872 (2010).
  15. M. Kneissl, T. Kolbe, N. Lobo, J. Stellmach, A. Knauer, V. Kueller, H. Rodriguez, S. Einfeldt, M. Weyers, Advances in InAlGaN-based deep UV light emitting diode technologies, Proceedings of the 12th International Symposium on the Science and Technology of Light Sources and the 3rd International Conference on White LEDs and Solid State Lighting, LS-WLED 2010, 265-268 (2010).
  16. W. W. Chow, M. H. Crawford and J. Y. Tsao, M. Kneissl, Internal efficiency of InGaN light-emitting diodes: Beyond a quasi-equilibrium model, Appl. Phys. Lett. 97, 121105 (2010).
  17. V. Hoffmann, C. Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, M. Weyers, G. Tränkle, M. Kneissl, Well width study of InGaN multiple quantum well structures for blue-green emitters, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.09.013
  18. V. Hoffmann, A. Knauer, C. Brunner, S. Einfeldt, M. Weyers, G.Tränkle, K. Haberland, J.-T. Zettler, M. Kneissl, Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.09.0484.
  19. H. Rodriguez, N. Lobo, S. Einfeldt, A. Knauer, M. Weyers and M.Kneissl, GaN-based Ultraviolet Light-Emitting Diodes with Multifinger Contacts, phys. stat. sol. (a), (2010), DOI: 10.1002/pssa.201026193
  20. V. Küller, A. Knauer, F. Brunner, U. Zeimer, H. Rodriguez, M. Weyers, and M. Kneissl, Growth of AlGaN and AlN on Patterned AlN/Sapphire Templates, Journal of Crystal Growth (2010), doi:10.1016/j.jcrysgro.2010.06.040
  21. T. Kolbe, A. Knauer, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 97, 171105 (2010).
  22. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research (2010), doi: 10.1016/j.watres.2010.11.015.
  23. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011)

 

2009

  1. T. Kolbe, A. Knauer, H. Wenzel, S. Einfeldt, V. Küller, P. Vogt, M. Weyers, M. Kneissl, Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers, phys. stat .sol. (c), 1-4 (2009), DOI: 10.1002/pssa.200880895.
  2. A. Knauer, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, and T. Zettler, Optimization of InGaN/(In,Al,Ga)N based near UV-LEDs by MQW strain balancing with in-situ wafer bow sensor, phys. stat .sol. (a) 206, 211-214 (2009).
  3. T. Wernicke, U. Zeimer, C. Netzel, F. Brunner, A. Knauer, M. Weyers, M. Kneissl, Epitaxial Lateral Overgrowth on (2-1-10) a-Plane GaN with [0-111] Oriented Stripes, J. Crys. Growth, (2009), DOI:10.1016/j.jcrysgro.2009.01.0
  4. A. Knauer, F. Brunner, T. Kolbe V. Küller, H. Rodriguez. S. Einfeldt, M. Weyers and M. Kneissl, MOVPE growth for UV-LEDs, Proc. SPIE 7231, 72310G (2009).
  5. Michael Kneissl,Zhihong Yang, Mark Teepe, Noble M. Johnson, Ultraviolet laser diodes on AlN and sapphire substrates, Proc. SPIE 7230, 7230-13 (2009).
  6. M. Pristovsek, J. Stellmach, M. Leyer, M. Kneissl, Growth mode of InGaN on GaN (0001) in MOVPE, phys. stat .sol. (c), 1– 5 (2009) DOI: 10.1002/pssc.200880915
  7. Christian Meissner, Simon Ploch, Markus Pristovsek, Michael Kneissl, Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE, phys. stat .sol. (c), 6, S2, S545 (2009). DOI: 10.1002/pssc.200880872
  8. S. Ploch, C. Meissner, M. Pristovsek, M. Kneissl, Growth Mode and Shape of InN Quantum Dots and Nanostructures grown by Metal Organic Vapour Phase Epitaxy, phys. stat .sol. c 6, s574 (2008). DOI: 10.1002/pssc.200880938
  9. R. Paßmann, T. Bruhn, T.A. Nilson, B. O. Fimland, M. Kneissl, N. Esser, P.Vogt, Adsorption geometry of hydrocarbon ring molecules on GaAs(001)c4x4, Phys. Status Solidi B 246 (Feature Article), 1504-1509 (2009)  DOI: 10.1002/pssb.200945178
  10. Regina Passmann, Priscila Favero, Wolf Gero Schmidt, Ronei Miotto, Walter Braun, Wolfgang Richter, Michael Kneissl, Norbert Esser and Patrick Vogt, Bonding configuration of cyclopentene on InP(001)(2x4) surface, Phys. Rev. B 80, 125303 (2009).
  11. Jens Raß, Tim Wernicke, Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Jan Kupec, Bernd Witzigmann, Patrick Vogt, Sven Einfeldt, Markus Weyers, Michael Kneissl, Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN, phys. stat. sol. (RRL) 4, 1-3 (2010). (DOI 10.1002/pssr.200903325).
  12. R. Paßmann, T. Bruhn, B. O. Fimland, W. Richter, M. Kneissl, N. Esser, P. Vogt, Adsorption of cyclopentene on GaAs(001) and InP(001), a comparative study by synchrotron-based core level spectroscopy, World Scientific WSPC - Proceedings of the workshop on synchrotron radiation and nano-structures 1, (2009), ISBN-13: 978-981-4280-83-9
  13. W. Neumann, A. Mogilatenko, T. Wernicke, E. Richter, M. Weyers, M. Kneissl, Structure investigations of nonpolar GaN layers, Journal of Microscopy (2009) DOI: 10.1111/j.1365-2818.2009.03249.
  14. M. Kneissl, T. Kolbe, N. Lobo, J. Stellmach, A. Knauer, V. Küller, H. Rodriguez, S. Einfeldt, Markus Weyers, Deep UV nitride-based light emitting diodes - applications and challenges, Proceedings of the 6th China International Forum on Solid State Lighting (2009).

 

2008

  1. H. Wenzel, A. Knauer, T. Kolbe and M. Kneissl, Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes, IEEE Proceedings 8th International Conference on Numerical Simulation of Optoelectronic Devices, 5 (2008).
  2. V. Hoffmann, A. Knauer, F. Brunner, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, G. Tränkle, J.M. Karaliunas, K. Kazlauskas, S. Jursenas, U. Jahn, J.R. vanLook, M. Kneissl, Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes, J. Cryst. Growth 310, 4525 (2008).
  3. M. Pristovsek, A. Philippou, B. Rähmer, W. Richter, Properties of InMnP (001) grown by MOVPE, J. Crystal Growth 310, 4046 (2008).
  4. O. Reentilä, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M. Heuken, M. Kneissl, M. Weyers, G. Tränkle. Effect of the AlN nucleation layer growth on AlN material quality, J. Cryst. Growth 310, (23), 4932 (2008).
  5. M. Pristovsek, Ch. Meißner, and M. Kneissl, R. Jakomin, S. Vantaggio, and T. Tarricone, Growth and characterization of manganese-doped InAsP, J. Cryst. Growth 310, 5028 (2008).
  6. Raimund Kremzow, M. Pristovsek, M. Kneissl, Ripening of InAs Quantum Dots on GaAs (001) investigated with in-situ Scanning Tunneling Microscopy in Metal-Organic Vapor Phase Epitaxy, J. Cryst. Growth 310, 4751 (2008).
  7. Martin Leyer, Joachim Stellmach, Christian Meissner, Markus Pristovsek, Michael Kneissl, The critical thickness of InGaN on (0001) GaN, J. Cryst. Growth 310, 4913 (2008).
  8. Michael Kneissl, Ultraviolet light-emitting diodes promise new solutions for water purification, World Water & Environmental Engineering, Vol. 31 (3), 35 (2008).
  9. Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, Structural and optical properties of non-polar GaN thin films, Appl. Phys. Lett. 92, 171904 (2008).
  10. B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, A-plane GaN ELO structures: growth domains, morphological defects, and impurity incorporation directly imaged by scanning cathodoluminescence microscopy, Appl. Phys. Lett. 92, 212111 (2008).
  11. A. Knauer, H. Wenzel, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle, Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes, Appl. Phys. Lett. 92, 191912 (2008).
  12. Christian Meissner, Simon Ploch, Martin Leyer, Markus Pristovsek and Michael Kneissl, Indium Nitride Quantum Dot growth modes in Metal-Organic Vapour Phase Epitaxy, J. Cryst. Growth 310, 4959 (2008) .
  13. Tim Wernicke, Ute Zeimer, Martin Herms, Markus Weyers, M. Kneissl, Gert Irmer, Microstructure of a-plane (2-1-10) GaN ELOG stripe patterns with different in-plane orientation, Journal of Materials Science: Materials in Electronics, Volume 19, Supplement 1 (2008), doi: 10.1007/s10854-008-9638-9.
  14. G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering, Journal of Materials Science: Materials in Electronics, Volume 19, Supplement 1 (2008), doi: 10.1007/s10854-007-9557-1.
  15. F. Brunner, H. Protzmann, M. Heuken, A. Knauer, M. Weyers, and M. Kneissl, High-temperature growth of AlN in a Production Scale 11x2" MOVPE reactor, phys. stat. sol. (c), 1 (2008).
  16. Gustavo E. Fernandes, Laurent Guyot, Grace D. Chern, Michael Kneissl, Noble M. Johnson, QingHai Song, Lei Xu, and Richard K. Chang, Wavelength and intensity switching in directly coupled semiconductor microdisk lasers, Optics Letters 33, 605 (2008).
  17. Tim Wernicke, Carsten Netzel, Markus Weyers, Michael Kneissl, Semipolar GaN grown on m-plane sapphire using MOVPE, phys. stat. sol. (c) 5, 1815 (2008).
  18. C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, and M. Kneissl, Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations, J. Cryst. Growth 310, 8 (2008).
  19. Markus Pristovsek and Wolfgang Richter, In-situ monitoring for nano-structure growth in MOVPE, in Semiconductor Nanostructures Kapitel 3, Ed: D. Bimberg, Springer-Verlag 67-86 (2008)

2007

  1. Ulrich T. Schwarz and M. Kneissl, Nitride emitters go nonpolar, phys. stat. sol. (rapid research letters) 1, A44 (2007)
  2. Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Oliver Schmidt, Peter Kiesel, Noble M. Johnson, Sandra Schujman, and Leo J. Schowalter, Ultraviolet semiconductor laser diodes on bulk AlN, J. Appl. Phys. 101,123103 (2007)
  3. W. W. Chow, M. Kneissl, J. E. Northrup, N. M. Johnson, Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers, Appl. Phys. Lett. 90, 101116 (2007)
  4. R. Passmann, M. Kropp, T. Bruhn, B.O. Fimland, A.C. Gossard, W. Richter, N. Esser, P. Vogt, Optical anisotropy of cyclopentene terminated GaAs(001) surfaces, Appl. Phys. A 87, 469-473 (2007)
  5. G.D. Chern, G.E Fernandes, R.K. Chang, Q. Song, L. Xu, M. Kneissl, N.M. Johnson, High-Q-preserving coupling between a spiral and a semicircle m-cavity, Optics Letters 32, 1093 (2007)
  6. Ch. Kaspari, M. Pristovsek, W. Richter, Homoepitaxial growth rate measurement using in-situ Reflectance Anisotropy Spectroscopy, J. Crystal Growth 298, 46-49, 2007
  7. M. Pristovsek, B. Rähmer, M. Breusig, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, J. Crystal Growth, 298, 0, 8-11, 2007
  8. S. Weeke, M. Leyer, M. Pristovsek, F. Brunner, M. Weyers, W. Richter, Segregation and desorption of antimony in InP in MOVPE, J. Crystal Growth, 298, 0, 159-162, 2007

2006

  1. Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Noble M. Johnson, Alexander Usikov and Vladimir Dmitriev, Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Template, Jpn. J. of Appl. Phys. 45, 3905 (2006)
  2. L. Zhou, J. E. Epler, M. R. Krames, W. Goetz, M. Gherasimova, Z. Ren, J. Han, M. Kneissl, and N. M. Johnson, Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes, Appl. Phys. Lett. 89, 241113 (2006)
  3. Richard K. Chang, Gustavo E. Fernandes, and Michael Kneissl, The Quest for Uni-Directionality with WGMs in µ-Lasers: Coupled Oscillators and Amplifiers, Proceedings of 2006 8th International Conference on Transparent Optical Networks, 47 (2006)
  4. M. Drago, P. Vogt, W. Richter, MOVPE growth of InN with ammonia on sapphire, Phys. Stat. Sol. (a), 203, 116-126 (2006)
  5. B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89, 063108 (2006)
  6. B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89 063108 (2006)
  7. M. Drago, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN growth on sapphire using different nitridation procedure, Phys. Stat. Sol. (a) 203 (7), 1622-1625 (2006)
  8. R. Ehlert, F. Poser, N. Esser, P. Vogt, W. Richter, MOVPE growth and surface reconstructions of GaAs(001) surfaces, Phys. Stat. Sol. (b) 243 No13 (2006) 2575-2580
  9. P. Ruterana, M. Abouzaid, F. Gloux, W. Maciej, J. L. Doualan, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers, phys. stat. sol. (a) 203 (1), 156-161 (2006)

2005

  1. W.W. Chow & M. Kneissl, Laser gain properties of AlGaN quantum wells, J. Appl. Phys. 98, 114502 (2005)
  2. M. Kneissl, G.D. Chern, M. Teepe, D.W. Treat, Z. Yang, R.K. Chang, N.M. Johnson, Spiral-shaped microcdisk laser, SPIE Proc. 5738, 225 (2005)
  3. O. Schmidt, O. Wolst, M. Kneissl, P. Kiesel, Z.H. Yang, M. Teepe, N.M. Johnson, Gain and photoluminescence spectroscopy in violet and ultra-violet InAlGaN laser structures, phys. stat. sol. (c) 2, No. 7, 2891 (2005)
  4. M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proceedings 772, 1517 (2005)
  5. I.H. Brown, I.A. Pope, P.M. Smowton , P Blood, and J.D. Thomson, W.W. Chow, D.P. Bour, M. Kneissl, Determination of the Piezoelectric Field in InGaN Quantum Wells, Appl. Phys. Lett. 86, 131108 (2005)
  6. E. Silveira, J. A. Freitas Jr., G. Slack, L. Schowalter, M. A. Kneissl, D.W. Treat, N. M. Johnson, Free and bound excitons in bulk AlN, J. Cryst. Growth 281, 188 (2005)
  7. Michael Kneissl, Mark Teepe, Naoko Miyashita, Grace D. Chern, Richard K. Chang, and Noble M. Johnson, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proc., Vol. 772, 1517 (2005)
  8. H. Y. Peng, M. D. McCluskey, Y. M. Gupta, M. A. Kneissl, N. M. Johnson, Shock-induced band gap shift in GaN: anisotropy of the deformation potentials, Phys. Rev. B 71, 115207 (2005)
  9. P. Ruterana, M. Morales, F. Gourbilleau, P. Singh, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Effects of the low temperature buffer and annealing on the properties on InN layers grown by MOVPE, Phys. Stat. Sol. (a), 202 (5), 781-784 (2005)
  10. M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter, Development of InN metalorganic vapor phase epitaxy, Cryst. Res. Technol. 40, No. 10-11, 993-996 (2005)
  11. S. Chandola, J. Jacob, K. Fleischer, P. Vogt, W. Richter, J. F. McGilp, Optical response of Ag-induced reconstructions on vicianl Si(111), Phys. Stat. Sol. (b) 242, No. 15, 3017, 2005

2004

  1. E. Silveira, J.A. Freitas Jr., M. Kneissl, D.W. Treat, N.M. Johnson, G. Slack, L. Schowalter, Near-band-edge cathodoluminescence studies of AlN homoepitaxial films, Applied Physics Letters 84, 3501 (2004).
  2. M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Current-injection spiral-shaped microcavity disk laser diodes with uni-directional emission, Applied Physics Letters 84, 2485 (2004).
  3. G.D. Chern, H.E. Tureci, A.D. Stone, R.K. Chang, M. Kneissl, N.M. Johnson, Uni-directionally blue emitting spiral-shaped micropillar laser diode, 2004 Digest of the LEOS Summer Topical Meetings: Biophotonics/Optical Interconnects & VLSI Photonics/WGM Microcavities, 2 (2004)
  4. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet InGaN, AlGaN and InAlGaN multiple-quantum-well laser diodes, SPIE Proc. 5365, 278 (2004).
  5. O. Pulci, K. Fleischer, M. Pristovsek, S. Tsukamoto, R. DelSole, W. Richter, Structural Analysis by Reflectance Anisotropy Spectroscopy: As and Sb on GaAs(110), J. Phys.: Condens. Matter 16 (2004) 4367
  6. K. Lüdge, P. Vogt, W. Richter, B.-O. Fimland, W. Braun, N. Esser, Metallic nanostructures on Co/GaAs(001)(4x2) surfaces, J. Vac. Sci. Technol. B 22 (4) (2004) 2008
  7. V. Hoffmann, F. Poser, C. Kaspari, S. Weeke, M. Pristovsek, W. Richter, Nitrogen-arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE, Journal of Crystal Growth 272 (2004) 30-36
  8. M. Drago, T. Schmidtling, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN Growth and Annealing Investigations using in-situ Spectroscopic Ellipsometry, J.Crys. Growth 272, (2004), 87-93
  9. M.R. Phillips, M.H. Zareie, O. Gelhausen, M. Drago, T. Schmidtling, W. Richter, Scanning tunneling and cathodoluminescence spectroscopy of indium nitride, J.Crys. Growth 269, (2004), 106-110

2003

  1. G.D. Chern, H.E. Tureci, A.D. Stone, R.K. Chang, M. Kneissl, N.M. Johnson, Uni-directional lasing from InGaN multiple quantum-well spiral-shaped micropillars, Applied Physics Letters 83, 1710 (2003)
  2. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet AlGaN Multiple Quantum Well Laser Diodes, Applied Physics Letters 82, 4441 (2003)
  3. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Continuous-Wave Operation of Ultraviolet InGaN/InAlGaN Multiple Quantum Well Laser Diodes, Applied Physics Letters 82, 2386 (2003)
  4. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet InAlGaN Multiple Quantum Well Laser Diodes, ("Editor’s Choice"), phys. stat. sol. (a), Vol. 200, No. 1, 118-121 (2003)
  5. H.Y. Peng, M.D. McCluskey, Y. Gupta, M. Kneissl, N.M. Johnson, The Franz-Keldysh effect in shocked GaN:Mg, Applied Physics Letters 82, 2085 (2003)
  6. E.A. Stach, W.S. Wong, M. Kneissl, Quantitative determination of the kinetics of nanopipe growth in GaN, Accepted for publication in the Proceedings of Materials Research Society 2002 Fall Meeting, Symposium on GaN and Related Alloys (2003)
  7. R.F. Schmidt, M. Kneissl, P. Kiesel, C.G. Van de Walle, N.M. Johnson, G. Doehler, F. Renner, Direct Determination of the Built-in Polarization Field in InGaN/GaN Quantum Wells, Proc. of SIMC XII, IEEE Catalog Number: 02CH37343 (ISBN: 0-7803-7418-5), 48-51 (2003)
  8. M. Kneissl, Advances in InGaAlN laser diode technology towards the development of UV optical sources, SPIE Proc. 4995, 103 (2003)
  9. J.W. Wagner, V. Wagner, L. Hansen, G. Schmidt, J. Geurts,P. Vogt, N. Esser, W. Richter, Preparation of BeTe surface reconstructions by decapping and thermal treatment, Journ. of Appl. Phys. 93, 1511, 2003
  10. W.G. Schmidt, P.H. Hahn, F. Bechstedt, N. Esser, P. Vogt, A. Wange, W. Richter, InP(001)-(2x1) surface: A hydrogen stabilized structure, Phys. Rev. Lett. 90, 126101, 2003
  11. K. Lüdge, P. Vogt, W. Braun, W. Richter, N. Esser, Cobalt growth on InGaP(001)(2X4): Interface formation, J. Vac. Sci. Technol. B 21 (2003)
  12. M. Drago, T. Schmidtling, U.W. Pohl, S. Peters, W. Richter, InN metalorganic vapour phase epitaxy and ellipsometric characterisation, phys. stat. sol. (c) 0, 7, 2842 (2003)
  13. M. Pristovsek, S. Tsukamoto, B. Han, J.T. Zettler, W. Richter, Influence of the reconstruction of GaAs(001) on the electro-opitcal bulk properties, Journ. Crys. Growth, 248, 254 (2003)

2002

  1. M. Kneissl, T.L. Paoli, P. Kiesel, D.W. Treat, M. Teepe, N.M. Miyashita, N.M. Johnson, Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator, Applied Physics Letters 80 (18), 3283-3285 (2002).
  2. M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, M. R., Miyashita, N.M. Johnson, CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off, Materials Science & Engineering B, B93, 68 (2002)
  3. F. Renner, P. Kiesel, G. H. Döhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy, Applied Physics Letters 81 (3), 490 (2002).
  4. M.D. McCluskey, K.K. Zhuravlev, M. Kneissl, W.S. Wong, D.W. Treat, S. Limpijumnong, C.G. Van de Walle, N.M. Johnson, Vibrational spectroscopy of GaN:Mg under pressure, Mat. Res. Soc. Symp. Proc. Vol. 693, I2.4 (2002).
  5. J.A. Chediak, M. Kneissl, T. Sands, Evaluation of InGaN films as optical absorption filters for applications in integrated fluorescence detection micro-bioanalytical systems, Mat. Res. Soc. Symp. Proc. Vol. 693, I11.13 (2002)
  6. H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, N.M. Johnson, Band gap shift of GaN under uniaxial strain compression, Mat. Res. Soc. Symp. Proc. Vol. 693, I11.49 (2002).
  7. W.S. Wong, M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, A. Salleo, N.M. Johnson, Continuous-wave InGaN laser diodes on copper and diamond substrates, Journal of Materials Research, Vol. 17 (4), 890-894 (2002).
  8. M. Kneissl, N.M. Johnson, L. Schowalter, Palo Alto Research Center (PARC) and Crystal IS demonstrate the first UV-LED on AlN substrates, Compound Semiconductor, Vol. 8 (4), 9 (2002).
  9. M. Kneissl, N.M. Johnson, L. Schowalter, Successors to Sapphire in the GaN Market, III - Vs Review, Vol. 15, No 7 (2002).
  10. J.C. Rojo, L. Schowalter, S. Schujman, S. Biswas, G. Slack, K. Morgan, J. Barani, B. Raghothamachar, M. Dudley, M. Shur, R. Gaska, N.M Johnson, M. Kneissl, Progress in the preparation of aluminum nitride substrates from bulk crystals, Mat. Res. Soc. Symp. Proc. Vol. 722, K1.1.1 (2002)
  11. E.A. Stach, W.S. Wong, M. Kneissl, T.Sands, Defect Formation via thermal decomposition in GaN,P roceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds published in the series "Physics of Microstructered Semiconductors", 151 (2002)
  12. P. Kiesel, F. Renner, M. Kneissl, C.G. Van de Walle, G. Doehler, N.M. Johnson, Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells, physica status solidi (b) 234, 742 (2002)
  13. M.D. McCluskey, Y.M. Gupta, C.G. Van de Walle, D.P. Bour, M. Kneissl, N.M. Johnson, Band gap changes of GaN shocked to 13 Gpa, Appl. Phys. Lett. 80, 1912 (2002)
  14. K. Haberland, A. Kaluza, M. Zorn M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter, Real-time calibration of wafer temperature, growth rate and composition by opitcal in-situ techniques during AlxGa1-xAs growth in MOVPE, Journ. Crys. Growth, 240, 87, 2002
  15. K. Lüdge, B. D. Schultz, P. Vogt, M. M. R. Evans, W. Braun, C.J. Palmstrom, W. Richter and N. Esser, Structure and Interface Composition of Co layers grown on As-rich GaAs(001) c(4x4) surfaces, J. Vac. Sci. Technol. B20, 1591 (2002)

2001

  1. Michael Kneissl, William S. Wong, David W. Treat, Mark Teepe, Naoko Myiashita, Noble M. Johnson, CW INGaN multiple-quantum-well laser diodes on copper substrates, Physica Status Solidi A, Vol. 18 (1), 23 (2001)
  2. P. Kiesel, F. Renner, M. Kneissl, N.M. Johnson, G. Doehler, Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes, Physica Status Solidi A, Vol. 188, 131 (2001)
  3. L.T. Romano, M. Kneissl, J.E. Northrup, C.G. Van de Walle, D.W. Treat, Influence of microstructure on the carrier concentration of Mg-doped GaN films, Appl. Phys. Lett. 79, 2734 (2001)
  4. Wong, W.S., Kneissl, M., Mei, P., Treat, D.W., Teepe, M., Johnson, N.M., Integration of InxGa1-xN laser diodes with dissimilar substrates by laser lift-off, Mat. Res. Soc. Symp. Proc. Vol. 639, G12.2.1 (2001)
  5. H.D. Summers, P.M. Smowton, P. Blood, M. Dineen, R.M. Perks, D.P. Bour, M Kneissl, Spatially and spectrally resolved measurement of optical loss in InGaN laser structures, Journal of Crystal Growth, Vol. 230, 517 (2001)
  6. P.M. Sweeney, C.M. Harder, M.C. Cheung, A.N. Cartwright, D.P. Bour, M. Kneissl, F.H. Long, M.E. Aumer, S.F. LeBoeuf, S.M. Bedair, Optimizing light emission from nitride quantum wells, Proceedings of 2001 International Conference on Compound Semiconductor Manufacturing Technology, 159 (2001)
  7. Sweeney, P.M., Cheung, M.C., Chen, F., Cartwright, A.N., Bour, D.P., Kneissl, M., Spectroscopy and modeling of carrier recombination in III-N heterostructures, Physica Status Solidi B, Vol 228, 115, (2001)
  8. Michael Kneissl, William S. Wong, David W. Treat, Mark Teepe, Naoko Myiashita, Noble M. Johnson, Continuous-wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates obtained by Laser Lift-of, IEEE Journal of Selected Topics in Quantum Electronics Vol. 7, 188 (2001)
  9. Michael Kneissl, William S. Wong, Chris. G. Van de Walle, John E. Northrup, David W. Treat, Mark Teepe, Naoko Miyashita, Peter Kiesel and Noble M. Johnson, Performance Characteristics of CW InGaN Multiple-Quantum-Well Laser Diodes, Mat. Res. Soc. Symp. Proc. Vol. 639, G10.6 (2001)
  10. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrate, Appl. Phys. Lett. 78, 1198 (2001)
  11. William S. Wong, Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita and Noble M. Johnson, Continuous-wave InGaN MQW laser diodes on copper and diamond substrate, Compound Semiconductor, Vol. 7 (2), 47 (2001)
  12. M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.T. Zettler, W. Richter, M. Zorn, M. Weyers, In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy, Phys. Stat. Solidi A 188, 1423 (2001)

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