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Publications 2007

  1. Ulrich T. Schwarz and M. Kneissl, Nitride emitters go nonpolar, phys. stat. sol. (rapid research letters) 1, A44 (2007)
  2. Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Oliver Schmidt, Peter Kiesel, Noble M. Johnson, Sandra Schujman, and Leo J. Schowalter, Ultraviolet semiconductor laser diodes on bulk AlN, J. Appl. Phys. 101,123103 (2007)
  3. W. W. Chow, M. Kneissl, J. E. Northrup, N. M. Johnson, Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers, Appl. Phys. Lett. 90, 101116 (2007)
  4. R. Passmann, M. Kropp, T. Bruhn, B.O. Fimland, A.C. Gossard, W. Richter, N. Esser, P. Vogt, Optical anisotropy of cyclopentene terminated GaAs(001) surfaces, Appl. Phys. A 87, 469-473 (2007)
  5. G.D. Chern, G.E Fernandes, R.K. Chang, Q. Song, L. Xu, M. Kneissl, N.M. Johnson, High-Q-preserving coupling between a spiral and a semicircle m-cavity, Optics Letters 32, 1093 (2007)
  6. Ch. Kaspari, M. Pristovsek, W. Richter, Homoepitaxial growth rate measurement using in-situ Reflectance Anisotropy Spectroscopy, J. Crystal Growth 298, 46-49, 2007
  7. M. Pristovsek, B. Rähmer, M. Breusig, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, J. Crystal Growth, 298, 0, 8-11, 2007
  8. S. Weeke, M. Leyer, M. Pristovsek, F. Brunner, M. Weyers, W. Richter, Segregation and desorption of antimony in InP in MOVPE, J. Crystal Growth, 298, 0, 159-162, 2007

Publications 2009

  1. T. Kolbe, A. Knauer, H. Wenzel, S. Einfeldt, V. Küller, P. Vogt, M. Weyers, M. Kneissl, Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers, phys. stat .sol. (c), 1-4 (2009), DOI: 10.1002/pssa.200880895.
  2. A. Knauer, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, and T. Zettler, Optimization of InGaN/(In,Al,Ga)N based near UV-LEDs by MQW strain balancing with in-situ wafer bow sensor, phys. stat .sol. (a) 206, 211-214 (2009).
  3. T. Wernicke, U. Zeimer, C. Netzel, F. Brunner, A. Knauer, M. Weyers, M. Kneissl, Epitaxial Lateral Overgrowth on (2-1-10) a-Plane GaN with [0-111] Oriented Stripes, J. Crys. Growth, (2009), DOI:10.1016/j.jcrysgro.2009.01.0
  4. A. Knauer, F. Brunner, T. Kolbe V. Küller, H. Rodriguez. S. Einfeldt, M. Weyers and M. Kneissl, MOVPE growth for UV-LEDs, Proc. SPIE 7231, 72310G (2009).
  5. Michael Kneissl,Zhihong Yang, Mark Teepe, Noble M. Johnson, Ultraviolet laser diodes on AlN and sapphire substrates, Proc. SPIE 7230, 7230-13 (2009).
  6. M. Pristovsek, J. Stellmach, M. Leyer, M. Kneissl, Growth mode of InGaN on GaN (0001) in MOVPE, phys. stat .sol. (c), 1– 5 (2009) DOI: 10.1002/pssc.200880915
  7. Christian Meissner, Simon Ploch, Markus Pristovsek, Michael Kneissl, Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE, phys. stat .sol. (c), 6, S2, S545 (2009). DOI: 10.1002/pssc.200880872
  8. S. Ploch, C. Meissner, M. Pristovsek, M. Kneissl, Growth Mode and Shape of InN Quantum Dots and Nanostructures grown by Metal Organic Vapour Phase Epitaxy, phys. stat .sol. c 6, s574 (2008). DOI: 10.1002/pssc.200880938
  9. R. Paßmann, T. Bruhn, T.A. Nilson, B. O. Fimland, M. Kneissl, N. Esser, P.Vogt, Adsorption geometry of hydrocarbon ring molecules on GaAs(001)c4x4, Phys. Status Solidi B 246 (Feature Article), 1504-1509 (2009) DOI: 10.1002/pssb.200945178
  10. Regina Passmann, Priscila Favero, Wolf Gero Schmidt, Ronei Miotto, Walter Braun, Wolfgang Richter, Michael Kneissl, Norbert Esser and Patrick Vogt, Bonding configuration of cyclopentene on InP(001)(2x4) surface, Phys. Rev. B 80, 125303 (2009).
  11. Jens Raß, Tim Wernicke, Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Jan Kupec, Bernd Witzigmann, Patrick Vogt, Sven Einfeldt, Markus Weyers, Michael Kneissl,Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN, phys. stat. sol. (RRL) 4, 1-3 (2010). (DOI 10.1002/pssr.200903325).
  12. R. Paßmann, T. Bruhn, B. O. Fimland, W. Richter, M. Kneissl, N. Esser, P. Vogt,Adsorption of cyclopentene on GaAs(001) and InP(001), a comparative study by synchrotron-based core level spectroscopy, World Scientific WSPC - Proceedings of the workshop on synchrotron radiation and nano-structures 1, (2009), ISBN-13: 978-981-4280-83-9
  13. W. Neumann, A. Mogilatenko, T. Wernicke, E. Richter, M. Weyers, M. Kneissl, Structure investigations of nonpolar GaN layers, Journal of Microscopy (2009) DOI: 10.1111/j.1365-2818.2009.03249.
  14. M. Kneissl, T. Kolbe, N. Lobo, J. Stellmach, A. Knauer, V. Küller, H. Rodriguez, S. Einfeldt, Markus Weyers, Deep UV nitride-based light emitting diodes - applications and challenges, Proceedings of the 6th China International Forum on Solid State Lighting (2009).


Publications 2008

  1. H. Wenzel, A. Knauer, T. Kolbe and M. Kneissl, Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes, IEEE Proceedings 8th International Conference on Numerical Simulation of Optoelectronic Devices, 5 (2008).
  2. V. Hoffmann, A. Knauer, F. Brunner, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, G. Tränkle, J.M. Karaliunas, K. Kazlauskas, S. Jursenas, U. Jahn, J.R. vanLook, M. Kneissl, Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes, J. Cryst. Growth 310, 4525 (2008).
  3. M. Pristovsek, A. Philippou, B. Rähmer, W. Richter, Properties of InMnP (001) grown by MOVPE, J. Crystal Growth 310, 4046 (2008).
  4. O. Reentilä, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M. Heuken, M. Kneissl, M. Weyers, G. Tränkle. Effect of the AlN nucleation layer growth on AlN material quality, J. Cryst. Growth 310, (23), 4932 (2008).
  5. M. Pristovsek, Ch. Meißner, and M. Kneissl, R. Jakomin, S. Vantaggio, and T. Tarricone, Growth and characterization of manganese-doped InAsP, J. Cryst. Growth 310, 5028 (2008).
  6. Raimund Kremzow, M. Pristovsek, M. Kneissl, Ripening of InAs Quantum Dots on GaAs (001) investigated with in-situ Scanning Tunneling Microscopy in Metal-Organic Vapor Phase Epitaxy, J. Cryst. Growth 310, 4751 (2008).
  7. Martin Leyer, Joachim Stellmach, Christian Meissner, Markus Pristovsek, Michael Kneissl, The critical thickness of InGaN on (0001) GaN, J. Cryst. Growth 310, 4913 (2008).
  8. Michael Kneissl, Ultraviolet light-emitting diodes promise new solutions for water purification, World Water & Environmental Engineering, Vol. 31 (3), 35 (2008).
  9. Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, Structural and optical properties of non-polar GaN thin films, Appl. Phys. Lett. 92, 171904 (2008).
  10. B. Bastek, F. Bertram, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, A-plane GaN ELO structures: growth domains, morphological defects, and impurity incorporation directly imaged by scanning cathodoluminescence microscopy, Appl. Phys. Lett. 92, 212111 (2008).
  11. A. Knauer, H. Wenzel, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle, Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes, Appl. Phys. Lett. 92, 191912 (2008).
  12. Christian Meissner, Simon Ploch, Martin Leyer, Markus Pristovsek and Michael Kneissl, Indium Nitride Quantum Dot growth modes in Metal-Organic Vapour Phase Epitaxy, J. Cryst. Growth 310, 4959 (2008) .
  13. Tim Wernicke, Ute Zeimer, Martin Herms, Markus Weyers, M. Kneissl, Gert Irmer, Microstructure of a-plane (2-1-10) GaN ELOG stripe patterns with different in-plane orientation, Journal of Materials Science: Materials in Electronics, Volume 19, Supplement 1 (2008), doi: 10.1007/s10854-008-9638-9.
  14. G. Irmer, T. Brumme, M. Herms, T. Wernicke, M. Kneissl, M. Weyers, Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering, Journal of Materials Science: Materials in Electronics, Volume 19, Supplement 1 (2008), doi: 10.1007/s10854-007-9557-1.
  15. F. Brunner, H. Protzmann, M. Heuken, A. Knauer, M. Weyers, and M. Kneissl, High-temperature growth of AlN in a Production Scale 11x2" MOVPE reactor, phys. stat. sol. (c), 1 (2008).
  16. Gustavo E. Fernandes, Laurent Guyot, Grace D. Chern, Michael Kneissl, Noble M. Johnson, QingHai Song, Lei Xu, and Richard K. Chang, Wavelength and intensity switching in directly coupled semiconductor microdisk lasers, Optics Letters 33, 605 (2008).
  17. Tim Wernicke, Carsten Netzel, Markus Weyers, Michael Kneissl, Semipolar GaN grown on m-plane sapphire using MOVPE, phys. stat. sol. (c) 5, 1815 (2008).
  18. C. Netzel, T. Wernicke, U. Zeimer, F. Brunner, M. Weyers, and M. Kneissl, Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations, J. Cryst. Growth 310, 8 (2008).
  19. Markus Pristovsek and Wolfgang Richter, In-situ monitoring for nano-structure growth in MOVPE, in Semiconductor Nanostructures Kapitel 3, Ed: D. Bimberg, Springer-Verlag 67-86 (2008)

Publications 2006

  1. Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Noble M. Johnson, Alexander Usikov and Vladimir Dmitriev, Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Template, Jpn. J. of Appl. Phys. 45, 3905 (2006)
  2. L. Zhou, J. E. Epler, M. R. Krames, W. Goetz, M. Gherasimova, Z. Ren, J. Han, M. Kneissl, and N. M. Johnson, Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes, Appl. Phys. Lett. 89, 241113 (2006)
  3. Richard K. Chang, Gustavo E. Fernandes, and Michael Kneissl, The Quest for Uni-Directionality with WGMs in µ-Lasers: Coupled Oscillators and Amplifiers, Proceedings of 2006 8th International Conference on Transparent Optical Networks, 47 (2006)
  4. M. Drago, P. Vogt, W. Richter, MOVPE growth of InN with ammonia on sapphire, Phys. Stat. Sol. (a), 203, 116-126 (2006)
  5. B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89, 063108 (2006)
  6. B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89 063108 (2006)
  7. M. Drago, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN growth on sapphire using different nitridation procedure, Phys. Stat. Sol. (a) 203 (7), 1622-1625 (2006)
  8. R. Ehlert, F. Poser, N. Esser, P. Vogt, W. Richter, MOVPE growth and surface reconstructions of GaAs(001) surfaces, Phys. Stat. Sol. (b) 243 No13 (2006) 2575-2580
  9. P. Ruterana, M. Abouzaid, F. Gloux, W. Maciej, J. L. Doualan, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers, phys. stat. sol. (a) 203 (1), 156-161 (2006)

Publications 2005

  1. W.W. Chow & M. Kneissl, Laser gain properties of AlGaN quantum wells, J. Appl. Phys. 98, 114502 (2005)
  2. M. Kneissl, G.D. Chern, M. Teepe, D.W. Treat, Z. Yang, R.K. Chang, N.M. Johnson, Spiral-shaped microcdisk laser, SPIE Proc. 5738, 225 (2005)
  3. O. Schmidt, O. Wolst, M. Kneissl, P. Kiesel, Z.H. Yang, M. Teepe, N.M. Johnson, Gain and photoluminescence spectroscopy in violet and ultra-violet InAlGaN laser structures, phys. stat. sol. (c) 2, No. 7, 2891 (2005)
  4. M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proceedings 772, 1517 (2005)
  5. I.H. Brown, I.A. Pope, P.M. Smowton , P Blood, and J.D. Thomson, W.W. Chow, D.P. Bour, M. Kneissl, Determination of the Piezoelectric Field in InGaN Quantum Wells, Appl. Phys. Lett. 86, 131108 (2005)
  6. E. Silveira, J. A. Freitas Jr., G. Slack, L. Schowalter, M. A. Kneissl, D.W. Treat, N. M. Johnson, Free and bound excitons in bulk AlN, J. Cryst. Growth 281, 188 (2005)
  7. Michael Kneissl, Mark Teepe, Naoko Miyashita, Grace D. Chern, Richard K. Chang, and Noble M. Johnson, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proc., Vol. 772, 1517 (2005)
  8. H. Y. Peng, M. D. McCluskey, Y. M. Gupta, M. A. Kneissl, N. M. Johnson, Shock-induced band gap shift in GaN: anisotropy of the deformation potentials, Phys. Rev. B 71, 115207 (2005)
  9. P. Ruterana, M. Morales, F. Gourbilleau, P. Singh, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Effects of the low temperature buffer and annealing on the properties on InN layers grown by MOVPE, Phys. Stat. Sol. (a), 202 (5), 781-784 (2005)
  10. M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter, Development of InN metalorganic vapor phase epitaxy, Cryst. Res. Technol. 40, No. 10-11, 993-996 (2005)
  11. S. Chandola, J. Jacob, K. Fleischer, P. Vogt, W. Richter, J. F. McGilp, Optical response of Ag-induced reconstructions on vicianl Si(111), Phys. Stat. Sol. (b) 242, No. 15, 3017, 2005

Publications 2004

  1. E. Silveira, J.A. Freitas Jr., M. Kneissl, D.W. Treat, N.M. Johnson, G. Slack, L. Schowalter, Near-band-edge cathodoluminescence studies of AlN homoepitaxial films, Applied Physics Letters 84, 3501 (2004).
  2. M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Current-injection spiral-shaped microcavity disk laser diodes with uni-directional emission, Applied Physics Letters 84, 2485 (2004).
  3. G.D. Chern, H.E. Tureci, A.D. Stone, R.K. Chang, M. Kneissl, N.M. Johnson, Uni-directionally blue emitting spiral-shaped micropillar laser diode, 2004 Digest of the LEOS Summer Topical Meetings: Biophotonics/Optical Interconnects & VLSI Photonics/WGM Microcavities, 2 (2004)
  4. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet InGaN, AlGaN and InAlGaN multiple-quantum-well laser diodes, SPIE Proc. 5365, 278 (2004).
  5. O. Pulci, K. Fleischer, M. Pristovsek, S. Tsukamoto, R. DelSole, W. Richter, Structural Analysis by Reflectance Anisotropy Spectroscopy: As and Sb on GaAs(110), J. Phys.: Condens. Matter 16 (2004) 4367
  6. K. Lüdge, P. Vogt, W. Richter, B.-O. Fimland, W. Braun, N. Esser, Metallic nanostructures on Co/GaAs(001)(4x2) surfaces, J. Vac. Sci. Technol. B 22 (4) (2004) 2008
  7. V. Hoffmann, F. Poser, C. Kaspari, S. Weeke, M. Pristovsek, W. Richter, Nitrogen-arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE, Journal of Crystal Growth 272 (2004) 30-36
  8. M. Drago, T. Schmidtling, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN Growth and Annealing Investigations using in-situ Spectroscopic Ellipsometry, J.Crys. Growth 272, (2004), 87-93
  9. M.R. Phillips, M.H. Zareie, O. Gelhausen, M. Drago, T. Schmidtling, W. Richter, Scanning tunneling and cathodoluminescence spectroscopy of indium nitride, J.Crys. Growth 269, (2004), 106-110

Publications 2003

  1. G.D. Chern, H.E. Tureci, A.D. Stone, R.K. Chang, M. Kneissl, N.M. Johnson, Uni-directional lasing from InGaN multiple quantum-well spiral-shaped micropillars, Applied Physics Letters 83, 1710 (2003)
  2. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet AlGaN Multiple Quantum Well Laser Diodes, Applied Physics Letters 82, 4441 (2003)
  3. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Continuous-Wave Operation of Ultraviolet InGaN/InAlGaN Multiple Quantum Well Laser Diodes, Applied Physics Letters 82, 2386 (2003)
  4. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet InAlGaN Multiple Quantum Well Laser Diodes, ("Editor’s Choice"), phys. stat. sol. (a), Vol. 200, No. 1, 118-121 (2003)
  5. H.Y. Peng, M.D. McCluskey, Y. Gupta, M. Kneissl, N.M. Johnson, The Franz-Keldysh effect in shocked GaN:Mg, Applied Physics Letters 82, 2085 (2003)
  6. E.A. Stach, W.S. Wong, M. Kneissl, Quantitative determination of the kinetics of nanopipe growth in GaN, Accepted for publication in the Proceedings of Materials Research Society 2002 Fall Meeting, Symposium on GaN and Related Alloys (2003)
  7. R.F. Schmidt, M. Kneissl, P. Kiesel, C.G. Van de Walle, N.M. Johnson, G. Doehler, F. Renner, Direct Determination of the Built-in Polarization Field in InGaN/GaN Quantum Wells, Proc. of SIMC XII, IEEE Catalog Number: 02CH37343 (ISBN: 0-7803-7418-5), 48-51 (2003)
  8. M. Kneissl, Advances in InGaAlN laser diode technology towards the development of UV optical sources, SPIE Proc. 4995, 103 (2003)
  9. J.W. Wagner, V. Wagner, L. Hansen, G. Schmidt, J. Geurts,P. Vogt, N. Esser, W. Richter, Preparation of BeTe surface reconstructions by decapping and thermal treatment, Journ. of Appl. Phys. 93, 1511, 2003
  10. W.G. Schmidt, P.H. Hahn, F. Bechstedt, N. Esser, P. Vogt, A. Wange, W. Richter, InP(001)-(2x1) surface: A hydrogen stabilized structure, Phys. Rev. Lett. 90, 126101, 2003
  11. K. Lüdge, P. Vogt, W. Braun, W. Richter, N. Esser, Cobalt growth on InGaP(001)(2X4): Interface formation, J. Vac. Sci. Technol. B 21 (2003)
  12. M. Drago, T. Schmidtling, U.W. Pohl, S. Peters, W. Richter, InN metalorganic vapour phase epitaxy and ellipsometric characterisation, phys. stat. sol. (c) 0, 7, 2842 (2003)
  13. M. Pristovsek, S. Tsukamoto, B. Han, J.T. Zettler, W. Richter, Influence of the reconstruction of GaAs(001) on the electro-opitcal bulk properties, Journ. Crys. Growth, 248, 254 (2003)

Publications 2002

  1. M. Kneissl, T.L. Paoli, P. Kiesel, D.W. Treat, M. Teepe, N.M. Miyashita, N.M. Johnson, Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator, Applied Physics Letters 80 (18), 3283-3285 (2002).
  2. M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, M. R., Miyashita, N.M. Johnson, CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off, Materials Science & Engineering B, B93, 68 (2002)
  3. F. Renner, P. Kiesel, G. H. Döhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy, Applied Physics Letters 81 (3), 490 (2002).
  4. M.D. McCluskey, K.K. Zhuravlev, M. Kneissl, W.S. Wong, D.W. Treat, S. Limpijumnong, C.G. Van de Walle, N.M. Johnson, Vibrational spectroscopy of GaN:Mg under pressure, Mat. Res. Soc. Symp. Proc. Vol. 693, I2.4 (2002).
  5. J.A. Chediak, M. Kneissl, T. Sands, Evaluation of InGaN films as optical absorption filters for applications in integrated fluorescence detection micro-bioanalytical systems, Mat. Res. Soc. Symp. Proc. Vol. 693, I11.13 (2002)
  6. H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, N.M. Johnson, Band gap shift of GaN under uniaxial strain compression, Mat. Res. Soc. Symp. Proc. Vol. 693, I11.49 (2002).
  7. W.S. Wong, M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, A. Salleo, N.M. Johnson, Continuous-wave InGaN laser diodes on copper and diamond substrates, Journal of Materials Research, Vol. 17 (4), 890-894 (2002).
  8. M. Kneissl, N.M. Johnson, L. Schowalter, Palo Alto Research Center (PARC) and Crystal IS demonstrate the first UV-LED on AlN substrates, Compound Semiconductor, Vol. 8 (4), 9 (2002).
  9. M. Kneissl, N.M. Johnson, L. Schowalter, Successors to Sapphire in the GaN Market, III - Vs Review, Vol. 15, No 7 (2002).
  10. J.C. Rojo, L. Schowalter, S. Schujman, S. Biswas, G. Slack, K. Morgan, J. Barani, B. Raghothamachar, M. Dudley, M. Shur, R. Gaska, N.M Johnson, M. Kneissl, Progress in the preparation of aluminum nitride substrates from bulk crystals, Mat. Res. Soc. Symp. Proc. Vol. 722, K1.1.1 (2002)
  11. E.A. Stach, W.S. Wong, M. Kneissl, T.Sands, Defect Formation via thermal decomposition in GaN,P roceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds published in the series "Physics of Microstructered Semiconductors", 151 (2002)
  12. P. Kiesel, F. Renner, M. Kneissl, C.G. Van de Walle, G. Doehler, N.M. Johnson, Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells, physica status solidi (b) 234, 742 (2002)
  13. M.D. McCluskey, Y.M. Gupta, C.G. Van de Walle, D.P. Bour, M. Kneissl, N.M. Johnson, Band gap changes of GaN shocked to 13 Gpa, Appl. Phys. Lett. 80, 1912 (2002)
  14. K. Haberland, A. Kaluza, M. Zorn M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter, Real-time calibration of wafer temperature, growth rate and composition by opitcal in-situ techniques during AlxGa1-xAs growth in MOVPE, Journ. Crys. Growth, 240, 87, 2002
  15. K. Lüdge, B. D. Schultz, P. Vogt, M. M. R. Evans, W. Braun, C.J. Palmstrom, W. Richter and N. Esser, Structure and Interface Composition of Co layers grown on As-rich GaAs(001) c(4x4) surfaces, J. Vac. Sci. Technol. B20, 1591 (2002)

Publications 2001

  1. Michael Kneissl, William S. Wong, David W. Treat, Mark Teepe, Naoko Myiashita, Noble M. Johnson, CW INGaN multiple-quantum-well laser diodes on copper substrates, Physica Status Solidi A, Vol. 18 (1), 23 (2001)
  2. P. Kiesel, F. Renner, M. Kneissl, N.M. Johnson, G. Doehler, Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes, Physica Status Solidi A, Vol. 188, 131 (2001)
  3. L.T. Romano, M. Kneissl, J.E. Northrup, C.G. Van de Walle, D.W. Treat, Influence of microstructure on the carrier concentration of Mg-doped GaN films, Appl. Phys. Lett. 79, 2734 (2001)
  4. Wong, W.S., Kneissl, M., Mei, P., Treat, D.W., Teepe, M., Johnson, N.M., Integration of InxGa1-xN laser diodes with dissimilar substrates by laser lift-off, Mat. Res. Soc. Symp. Proc. Vol. 639, G12.2.1 (2001)
  5. H.D. Summers, P.M. Smowton, P. Blood, M. Dineen, R.M. Perks, D.P. Bour, M Kneissl, Spatially and spectrally resolved measurement of optical loss in InGaN laser structures, Journal of Crystal Growth, Vol. 230, 517 (2001)
  6. P.M. Sweeney, C.M. Harder, M.C. Cheung, A.N. Cartwright, D.P. Bour, M. Kneissl, F.H. Long, M.E. Aumer, S.F. LeBoeuf, S.M. Bedair, Optimizing light emission from nitride quantum wells, Proceedings of 2001 International Conference on Compound Semiconductor Manufacturing Technology, 159 (2001)
  7. Sweeney, P.M., Cheung, M.C., Chen, F., Cartwright, A.N., Bour, D.P., Kneissl, M., Spectroscopy and modeling of carrier recombination in III-N heterostructures, Physica Status Solidi B, Vol 228, 115, (2001)
  8. Michael Kneissl, William S. Wong, David W. Treat, Mark Teepe, Naoko Myiashita, Noble M. Johnson, Continuous-wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates obtained by Laser Lift-of, IEEE Journal of Selected Topics in Quantum Electronics Vol. 7, 188 (2001)
  9. Michael Kneissl, William S. Wong, Chris. G. Van de Walle, John E. Northrup, David W. Treat, Mark Teepe, Naoko Miyashita, Peter Kiesel and Noble M. Johnson, Performance Characteristics of CW InGaN Multiple-Quantum-Well Laser Diodes, Mat. Res. Soc. Symp. Proc. Vol. 639, G10.6 (2001)
  10. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrate, Appl. Phys. Lett. 78, 1198 (2001)
  11. William S. Wong, Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita and Noble M. Johnson, Continuous-wave InGaN MQW laser diodes on copper and diamond substrate, Compound Semiconductor, Vol. 7 (2), 47 (2001)
  12. M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.T. Zettler, W. Richter, M. Zorn, M. Weyers, In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy, Phys. Stat. Solidi A 188, 1423 (2001)

Publications 2000

  1. W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, N.M. Johnson, The integration of InxGa1-xN multiple quantum well laser diodes on Copper substrates laser lift-off, Jpn. J. Appl. Phys. , Part 2, Vol 39, L1203 (2000)
  2. M. Kneissl, D.P. Bour, L.T. Romano, C.G. van de Walle, J.E. Northrup, W.S. Wong, D.W. Treat, M. Teepe, T. Schmidt, N.M. Johnson , Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates , Appl. Phys. Lett. 77 (13), 1931 (2000)
  3. D.P. Bour, M. Kneissl, C.G. van de Walle, J.E. Northrup, L.T. Romano, M. Teepe, R. Wood, T. Schmidt, N.M. Johnson , CW operation of InGaN MQW laser diodes , Physica Status Solidi A, Vol. 180, 139 (2000)
  4. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. Johnson, InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off, Appl. Phys. Lett. 77, 2822 (2000)
  5. D.P. Bour, N.M. Nickel, C.G. Van de Walle, M. Kneissl, B.S. Krusor, P. Mei, N.M. Johnson, Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates, Appl. Phys. Lett. 76, 2182 (2000)
  6. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off, Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors, 125 (2000)
  7. M. Kneissl, L.T. Romano, C.G. van de Walle, J.E. Nortrup, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita and Noble M. Johnson, Advances in blue laser diode development for high resolution printin, Proceedings of International Workshop on Nitride Semiconductors, 903 (2000)
  8. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Fabrication of InGaN multiple-quantum-well laser diodes on copper substrates by laser lift-off, Proceedings of International Workshop on Nitride Semiconductors, 883 (2000)
  9. L.L. Goddard, M. Kneissl, D.P. Bour, N.M. Johnson, Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing, J. Appl. Phys. 88 (7), 3820 (2000)
  10. Michael Kneissl, David P. Bour and Noble M. Johnson, Advances in laser diode development for high resolution and high speed printing, SPIE Proc. Vol. 3947, 174 (2000)
  11. D. Hofstetter, L.T. Romano, T.L. Paoli, D.P. Bour, M. Kneissl, Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed feedback laser diodes, Appl. Phys. Lett. 76 (17), 2337 (2000)
  12. Michael Kneissl, Chris G. Van de Walle, David P. Bour, Linda T. Romano, Cyrus P. Master, John E. Northrup, Noble M. Johnson, Performance and optical gain characteristic of InGaN MQW laser diodes, Journal of Luminescence 87-89, 135 (2000)
  13. N.B. Rex, R.K. Chang, L.J. Guido, D.P. Bour, M. Kneissl, Directional laser emission from chaotic modes in quadrupole-deformed GaN microdisks, Conference on Lasers and Electro-Optics (CLEO 2000), Technical Digest, Vol. 39, 178 (2000)
  14. D.P. Bour, M. Kneissl, C.G. Van de Walle, G.A. Evans, L.T. Romano, J.E. Northrup, M. Teepe, R.M. Wood, N.M. Johnson, Design and Performance of Asymmetric Waveguide Nitride Laser Diodes, IEEE Journal of QE, vol 36 (2), 184 (2000)
  15. M. Pristovsek, T. Trepk, M. Klein, J.-T. Zettler, W. Richter, Dynamic study of the surfaces of (001)GaAs in MOVPE during arsenic desorption, J. Appl. Phys., 87, (2000), 1245
  16. P. Vogt, A.M. Frisch, Th. Hannappel, S. Visbeck, F. Willig, Ch. Jung, R. Follath, W. Braun, W. Richter, N. Esser, Atomic structure and composition of the P-rich InP(001) surfaces, Appl. Surf. Sci. 166, 190 (2000)
  17. A.M. Frisch, P. Vogt, S. Visbeck, Th. Hannappel, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, N. Esser, Angle Resolved Photoemission Spectroscopy of the InP(001) Surface, Appl. Surf. Sci.166, 224 (2000)
  18. N. Esser, A.M. Frisch, W. Richter, P. Vogt, W. Braun, R. Follath, Ch. Jung, High-resolution core level photoelectron spectroscopy on InP(110) , Sol. Stat. Com. 113, 443 (2000)
  19. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Atomic Structure and composition of the (2x4) reconstruction on InGaP(001), PCSI-27 Salt-Lake City (2000), J. Vac. Sci. Technol. B, 18 (4), 2210 (2000)
  20. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Atomic structure and Composition of the (2x4) reconstruction of InGaP(001), J. Vac. Sci. Technol B18, 2210 (2000)
  21. K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, W. Richter, Clarification of the GaP(001)(2x4) Ga-rich reconstruction by scanning tunneling microscopy and ab initio theory, Phys. Rev. B 62, 11046 (2000),
  22. K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, W. Richter, Atomic structure of GaP(001) and InP(001) reconstructions: scanning tunneling microscopy and ab initio theory, Proc. 25th Int. Conf. Phys. Semicond., Osaka 2000, Springer Proceedings in Physics 87 (Eds. N. Miura and T. Ando), p. 445, Springer Verlag Heidelberg (2001)
  23. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Surface structure of ordered InGaP(001): The (2x4) reconstruction, Phys Rev B 62, 12601 (2000)
  24. M. Pristovsek, B. Han, J.-T. Zettler, W. Richter, In situ investigation of GaAs(001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J. Crys. Growth 221, 149 (2000)

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