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Inhalt des Dokuments

2000

  1. W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, N.M. Johnson, The integration of InxGa1-xN multiple quantum well laser diodes on Copper substrates laser lift-off, Jpn. J. Appl. Phys. , Part 2, Vol 39, L1203 (2000)
  2. M. Kneissl, D.P. Bour, L.T. Romano, C.G. van de Walle, J.E. Northrup, W.S. Wong, D.W. Treat, M. Teepe, T. Schmidt, N.M. Johnson , Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates , Appl. Phys. Lett. 77 (13), 1931 (2000)
  3. D.P. Bour, M. Kneissl, C.G. van de Walle, J.E. Northrup, L.T. Romano, M. Teepe, R. Wood, T. Schmidt, N.M. Johnson , CW operation of InGaN MQW laser diodes , Physica Status Solidi A, Vol. 180, 139 (2000)
  4. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. Johnson, InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off, Appl. Phys. Lett. 77, 2822 (2000)
  5. D.P. Bour, N.M. Nickel, C.G. Van de Walle, M. Kneissl, B.S. Krusor, P. Mei, N.M. Johnson, Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates, Appl. Phys. Lett. 76, 2182 (2000)
  6. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off, Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors, 125 (2000)
  7. M. Kneissl, L.T. Romano, C.G. van de Walle, J.E. Nortrup, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita and Noble M. Johnson, Advances in blue laser diode development for high resolution printin, Proceedings of International Workshop on Nitride Semiconductors, 903 (2000)
  8. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Fabrication of InGaN multiple-quantum-well laser diodes on copper substrates by laser lift-off, Proceedings of International Workshop on Nitride Semiconductors, 883 (2000)
  9. L.L. Goddard, M. Kneissl, D.P. Bour, N.M. Johnson, Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing, J. Appl. Phys. 88 (7), 3820 (2000)
  10. Michael Kneissl, David P. Bour and Noble M. Johnson, Advances in laser diode development for high resolution and high speed printing, SPIE Proc. Vol. 3947, 174 (2000)
  11. D. Hofstetter, L.T. Romano, T.L. Paoli, D.P. Bour, M. Kneissl, Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed feedback laser diodes, Appl. Phys. Lett. 76 (17), 2337 (2000)
  12. Michael Kneissl, Chris G. Van de Walle, David P. Bour, Linda T. Romano, Cyrus P. Master, John E. Northrup, Noble M. Johnson, Performance and optical gain characteristic of InGaN MQW laser diodes, Journal of Luminescence 87-89, 135 (2000)
  13. N.B. Rex, R.K. Chang, L.J. Guido, D.P. Bour, M. Kneissl, Directional laser emission from chaotic modes in quadrupole-deformed GaN microdisks, Conference on Lasers and Electro-Optics (CLEO 2000), Technical Digest, Vol. 39, 178 (2000)
  14. D.P. Bour, M. Kneissl, C.G. Van de Walle, G.A. Evans, L.T. Romano, J.E. Northrup, M. Teepe, R.M. Wood, N.M. Johnson, Design and Performance of Asymmetric Waveguide Nitride Laser Diodes, IEEE Journal of QE, vol 36 (2), 184 (2000)
  15. M. Pristovsek, T. Trepk, M. Klein, J.-T. Zettler, W. Richter, Dynamic study of the surfaces of (001)GaAs in MOVPE during arsenic desorption, J. Appl. Phys., 87, (2000), 1245
  16. P. Vogt, A.M. Frisch, Th. Hannappel, S. Visbeck, F. Willig, Ch. Jung, R. Follath, W. Braun, W. Richter, N. Esser, Atomic structure and composition of the P-rich InP(001) surfaces, Appl. Surf. Sci. 166, 190 (2000)
  17. A.M. Frisch, P. Vogt, S. Visbeck, Th. Hannappel, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, N. Esser, Angle Resolved Photoemission Spectroscopy of the InP(001) Surface, Appl. Surf. Sci.166, 224 (2000)
  18. N. Esser, A.M. Frisch, W. Richter, P. Vogt, W. Braun, R. Follath, Ch. Jung, High-resolution core level photoelectron spectroscopy on InP(110) , Sol. Stat. Com. 113, 443 (2000)
  19. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Atomic Structure and composition of the (2x4) reconstruction on InGaP(001), PCSI-27 Salt-Lake City (2000), J. Vac. Sci. Technol. B, 18 (4), 2210 (2000)
  20. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Atomic structure and Composition of the (2x4) reconstruction of InGaP(001), J. Vac. Sci. Technol B18, 2210 (2000)
  21. K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, W. Richter, Clarification of the GaP(001)(2x4) Ga-rich reconstruction by scanning tunneling microscopy and ab initio theory, Phys. Rev. B 62, 11046 (2000),
  22. K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, W. Richter, Atomic structure of GaP(001) and InP(001) reconstructions: scanning tunneling microscopy and ab initio theory, Proc. 25th Int. Conf. Phys. Semicond., Osaka 2000, Springer Proceedings in Physics 87 (Eds. N. Miura and T. Ando), p. 445, Springer Verlag Heidelberg (2001)
  23. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Surface structure of ordered InGaP(001): The (2x4) reconstruction, Phys Rev B 62, 12601 (2000)
  24. M. Pristovsek, B. Han, J.-T. Zettler, W. Richter, In situ investigation of GaAs(001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J. Crys. Growth 221, 149 (2000)

1999

  1. Michael Kneissl, David P. Bour, Chris G. Van de Walle, Linda T. Romano, John E. Northrup, Rose M. Wood, Mark Teepe, Tanya Schmidt, Noble M. Johnson, Room-temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure, phys. status sol. (a) 176, 49 (1999)
  2. M.D. McCluskey, C.G. Van de Walle, N.M. Johnson, D.P. Bour, M. Kneissl, DX Centers in AlGaN, Int. Journal of Modern Physics B, Vol. 13, No. 11, 1363 (1999)
  3. Michael Kneissl, David P. Bour, Chris G. Van de Walle, Linda T. Romano, John E. Northrup, Rose M. Wood, Mark Teepe, Noble M. Johnson, Room-temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure, Appl. Phys. Lett. Vol. 75, No. 4, 581 (1999)
  4. M.D. McCluskey, L.T. Romano, C.G. van de Walle, J.E. Nortrup, D.P. Bour, M. Kneissl, T. Suski, J. Jun, Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures, Appl. Phys. Lett. Vol. 75, No. 25, 3950 (1999)
  5. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. Johnson, Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff, Appl. Phys. Lett., Vol. 75, No. 10, 1360 (1999)
  6. William S. Wong, Tim Sands, Nathan Chung, Michael Kneissl, David Bour, Ping Mei, Linda Romano and Noble Johnson, Ubiquitous blue LEDs: the integration of GaN thin films with dissimilar substrate materials by wafer bonding and laser lift-off, Compound Semiconductor, Vol. 5(9), 54 (1999)
  7. M. Kneissl, D.P. Bour, L.T. Romano, D. Hofstetter, M. McCluskey, C. Dunnrowicz, R.M. Wood, N.M. Johnson, Characterization of InGaN/AlGaN Multiple Quantum Well Laser Diodes, SPIE Proceedings 3625-01 (1999)
  8. D.P. Bour, M. Kneissl, D. Hofstetter, L.T. Romano, M. McCluskey, C.G. Van de Walle, B.S. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, N.M. Johnson, MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, Materials Science & Engineering B, Vol 59, 33 (1999)
  9. M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun, Disordering of InGaN/GaN Superlattices after High-Pressure Annealing, MRS Internet J. Nitride Semicond. Res. 4S1, G3.42 (1999)
  10. D. Hofstetter, R.L. Thornton, L.T. Romano, D.P. Bour, M. Kneissl, R.M. Donaldson, C. Dunnrowicz, Characterization of InGaN/GaN-based multiple-quantum-well distributed feedback lasers, MRS Internet J. Nitride Semicond. Res. 4S1, G2.2 (1999)
  11. A.N. Cartwright, P.M. Sweeney, T. Prunty, D.P. Bour, M. Kneissl, R.M. Donaldson, C. Dunnrowicz, Electric field distribution in p-i-n GaN/InGaN multiple-quantum-well structures, MRS Internet J. Nitride Semicond. Res. 4S1, (1999)
  12. D. Streb,M. Vitzethum, P. Kiesel, G.H. Dohler, M. Kneissl, Extremely fast ambipolar diffusion in n-i-p-i doping superlattices investigated by an all-optical pump-and-probe technique, Superlattices and Microstructures, Vol. 25, 21 (1999)
  13. D.P. Bour, M. Kneissl, C. Dunnrowicz, R. Donaldson, N.M. Johnson, G. Evans, Stripe width dependence of threshold current for gain-guided AlGaInN laser diodes, Appl. Phys. Lett., Vol. 74, No. 3, 404 (1999)
  14. P. Vogt, A.M. Frisch, Th. Hannappel, S. Visbeck, F. Willig, Ch. Jung, N. Esser, W. Braun, W. Richter, Atomic Surface Structure of MOVPE-grown InP(001) , Phys. stat. sol. (b) 215, 737 (1999)
  15. Th. Hannappel, S. Visbeck, J. Mahrt, K. Knorr, P. Vogt, N. Esser, A.M. Frisch, M. Zorn, W. Richter, F. Willig , Characterization of clean P-rich MOCVD-grown InP(001)-films, Proc. 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June (1999), Prague, T2M 1, Edited by V. Gregor and K. Zaveta, ISBN 80-238-3551-3
  16. N. Esser, W.G. Schmidt, J. Bernholc, A:M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, Th. Hannappel, S. Visbeck, GaP(001) and InP(001): Reflectance Anisotropy and Surface Geometry, J. Vac. Sci. Technol. B 17, 1691 (1999)
  17. P. Vogt, Th. Hannappel, S. Visbeck, K. Knorr, N. Esser, W. Richter, Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE, Phys. Rev. B60, R5117 (1999)

1998

  1. L.T. Romano, D. Hofstetter, M.D. McCluskey, D.P. Bour, M. Kneissl, Structural and optical properties of epitaxially overgrown 3rd order gratings for InGaN/GaN-based DFB lasers, Appl. Phys. Lett., Vol. 73, No. 19, 2706 (1998)
  2. D.P. Bour, M. Kneissl, D. Hofstetter, L.T. Romano, M.D. McCluskey, C. Van de Walle, B. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, N.M. Johnson, MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, Proceedings of the European MRS Meeting (1998)
  3. D. Hofstetter, R.L. Thornton, L.T. Romano, D.P. Bour, M. Kneissl, R.M. Donaldson, Room temperature pulsed operation of an InGaN/GaN-based electrically injected multiquantum well DFB laser, Appl. Phys. Lett., Vol. 73, No. 15, 2158 (1998)
  4. M.D. McCluskey, N.M. Johnson, C.G. van de Walle, D.P. Bour, M. Kneissl, W. Walukiewicz, Evidence for oxygen DX centers in AlGaN, Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, 531 (1998)
  5. S.M. Donovan, B. Gila, J.D. MacKenzie, C.G. Van de Walle, D.P. Bour, M. Kneissl, W. Walukiewicz, The role of the In source in InN growth from molecular beams, Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, 525 (1998)
  6. D. Hofstetter, R.L. Thornton, M. Kneissl, D.P. Bour, C. Dunnrowicz, Demonstration of an InGaN/GaN-based optically pumped MQW DFB laser using holographically defined 3rd order gratings, Appl. Phys. Lett., Vol. 73, No. 14, 1928 (1998)
  7. D. Hofstetter, D. Sun, C. Dunnrowicz, M. Kneissl, D.W. Treat, Multi-wavelength light emitters for scanning applications fabricated by flipchip bonding, IEEE Photonics Technology Letters, Vol. 10, No. 10, 1371 (1998)
  8. D.P. Bour, M. Kneissl, L.T. Romano, M. McCluskey, C.G. Van deWalle, B.S. Krusor, R. Donaldson, J. Walker, C. Dunnrovicz, N.M. Johnson, Characteristics of InGaN/GaN Multiple Quantum Well Laser Diodes, IEEE Journal on Selected Topics in Quantum Electronics, Vol. 4, No. 3, 498 (1998)
  9. M. Kneissl, D.P. Bour, N.M. Johnson, L.T. Romano, B.S. Krusor, R. Donaldson, J. Walker, C. Dunnrovicz, Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching, Appl. Phys. Lett. 72 (13), 1539 (1998)
  10. M. Kneissl, D.P. Bour, B.S. Krusor, L.T. Romano, N.M. Johnson, M. McCluskey, W. Goetz, R.D. Bringans, Material characterization for III-nitride based light emitters, SPIE Proceedings 3279-10, 69-76 (1998)
  11. D.P. Bour, M. Kneissl, N.M. Johnson, L.T. Romano, B.S. Krusor, M. McCluskey, W. Goetz, R.D. Bringans, Characterization of AlGaInN heterostructures and laser diodes, SPIE Proceedings 3284-14, 94-102 (1998)
  12. M. Vitzethum, D. Streb, P. Kiesel, M. Kneissl, G.H. Dohler, New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices, Proceedings of the Second International Conference on Advanced Semiconductor Devices and Microsystems, 279 (1998)
  13. C.L. Chua, R.L. Thornton, D. Treat, M. Kneissl, C. Dunnrowicz, Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts, Appl. Phys. Lett., Vol. .9, 1001 (1998)
  14. M. McCluskey, N.M. Johnson, J. Boyce, M .Kneissl, Metastability of Oxygen Donors in AlGaN, Phys. Rev. Lett., Vol.80 (No. 18), 4008-4011 (1998)
  15. M. Kneissl, D. Hofstetter, D.P. Bour, R. Donaldson, J. Walker, N.M. Johnson, Dry-etching and characterization of mirros on III-nitride laser diodes from chemically assisted ion beam etching, Journal of Crystal Growth 189/190, 846-849 (1998)

1997

  1. B. Knüpfer, N. Müller, M. Welker, S.U. Dankowski, P. Kiesel, M. Kneissl, G.H. Döhler, Monolithic waveguide-based smart pixel operating at 120 Mb/s, IEEE Photonics Technology Letters 9 (no. 1), 97-99 (1997)
  2. S. Malzer, W. Geißelbrecht, U. Hilburger, M. Kneissl, P. Kiesel, R. Mayer and G.H. Döhler, Waveguide Modulator Structures with Soft Optical Confinement grown by the Epitaxial Shadow Mask (ESM) MBE-Technique , Journal of Crystal Growth, Vol.175-1762, 960-963 (1997)
  3. S.U. Dankowski, P. Kiesel, M. Ruff, D. Streb, S. Tautz, U.D. Keil, B. Knüpfer, M. Kneissl and G.H. Döhler, Optical and Electro-Optical Investigations of Low Temperature Grown GaAs and AlGaAs, Materials Science and Engineering B, Vol. 44, (no.1-3), 316-319 (1997)

1996

  1. S.U. Dankowski, D. Streb, M. Ruff, P. Kiesel, M. Kneissl, B. Knupfer, and G.H. Dohler, U.D. Keil, A.K. Verma, Above Band Gap Absorption Spectra of the Arsenic Antisite Defect in Low Temperature Grown GaAs and AlGaAs, Appl. Phys. Lett., Vol. 68, 37 (1996)
  2. U. Pfeiffer, M. Kneissl, B. Knupfer, N. Muller, P. Kiesel, and G.H. Dohler, J.S. Smith, Dynamical switching behaviour of n-i-p-i modulator structures, Appl. Phys. Lett. 68 (13), 1838-1840 (1996)
  3. M. Ruff, D. Streb, S.U. Dankowski, S. Tautz, P. Kiesel, B. Knupfer, M. Kneissl, N. Linder, G.H. Dohler, U.D. Keil, Polarisation dependence of the electro-absorption in low-temperature grown GaAs for above band gap energies, Appl. Phys. Lett. 68 (21), 2968-2970 (1996)
  4. U. Hilburger, M. Kneissl, P. Kiesel, B. Knupfer, H. Grothe, and G.H. Dohler, Monoltihic waveguide smart pixel for high--contrast and high--gain all-optical switching, Appl. Phys. Lett. 69 (6), 818-820 (1996)
  5. R. Windisch, M. Kneissl, P. Kiesel, B. Knüpfer, and G.H. Döhler, Low voltage high contrast n-i-p-i based waveguide modulators with alloyed selective contacts , IEEE Photonics Technology Letters, Vol. 8, 1325-1327 (1996)
  6. S. Tautz, S.U. Dankowski, M. Ruff, D. Streb, P. Kiesel, M. Kneissl, U.D. Keil and G.H. Döhler, Metal-semiconductor-metal-modulator structures based on electroabsorption in low temperature grown (Al)GaAs , CLEO Europe Technical Digest, 215 (1996)
  7. R. Windisch, M. Kneissl, P. Kiesel, and G.H. Döhler, Low voltage, high contrast n-i-p-i based waveguide modulator, CLEO Europe Technical Digest, (1996)
  8. S.U. Dankowski, P. Kiesel, D. Streb, M. Ruff, S. Tautz, B. Knüpfer, M. Kneissl, S. Malzer, U.D. Keil, J.B. Ibbetson, A.C. Gossard and G.H. Döhler, Polarization Dependent Electroabsorption in Non-Stochiometric GaAs and AlGaAs Grown at Low Substrate Temperatures, Proceedings of the 23rd ICPS, World Scientific, Singapore, M. Scheffler and R. Zimmermann, Eds., 1051-1054 (1996)
  9. M. Kneissl, P. Kiesel, N. Linder, H. Grothe, G.H. Dohler, Fast MSM modulators based on the two-dimensional Franz-Keldysh effect in MQW structures, SPIE Proceedings 2694, 165-173 (1996)
  10. U. Pfeiffer, M. Kneissl, P. Kiesel, J.S. Smith, G.H. Dohler, Fast electro-optic modulation with selectively contacted n-i-p-i structures, SPIE Proceedings 2694, 157-164(1996)
  11. B. Knupfer, P. Kiesel, M. Kneissl, N. Muller, U. Hilburger, S. Dankowski, A. Forster, G.H. Dohler, A novel monolithic waveguide-based smart pixel for high contrast, high gain and high speed all-optical switching, SPIE Proceedings 2695, 266-277 (1996)
  12. S. Malzer, M. Kneissl, P. Kiesel, K.H. Gulden, J.S. Smith, and G.H. Dohler, Properties and Applications of the Epitaxial shadow mask (ESM) MBE- Technique, Journal of Vacuum Science & Technology B, Vol.14, (no.3), 2175-2179 (1996)
  13. D. Streb, M. Ruff, S.U. Dankowski, P. Kiesel, M. Kneissl, S. Malzer, U.D. Keil, G.H. Dohler,, Optical characterization of low temperature grown GaAs by transmission measurements above band gap, Journal of Vacuum Science & Technology B, Vol.14, (no.3), 2275-2277 (1996)
  14. J. Schultz, S. Malzer, M. Kneissl, J.S. Smith, and G.H. Dohler, Many Body Effects and Charge Carrier Kinetics studied by Electro-optic experiments in Type-I Hetero n-i-p-i Structures with Selective Contacts, Sol. State Electron. 40, 683-686 (1996)

1995

  1. P. Kiesel, U. Hilburger, M. Kneissl, B. Knupfer, H. Grothe, and G.H. Dohler, All Optical Switching with Gain in Waveguide Modulator Structures, SIOE '95, Cardiff, IEE Proceedings Optoelectronics (1995)
  2. B. Knupfer, M. Kneissl, P. Kiesel, K. Reingruber, G.H. Dohler, H. Grothe, J.S. Smith, Hybrid n-i-p-i based smart pixels operating at 110 Mbit/sec, EOS Topical Meetings Digest Series: Vol. 6, 6.2 (1995)
  3. S.U. Dankowski, D. Streb, M. Ruff, P. Kiesel, M. Kneissl, B. Knupfer, N. Linder, and G.H. Dohler, U.D. Keil, Electro-optic effects for above bandgap energies in low temperature grown GaAs, 5th European Heterostructure Technology Workshop 1995 (ISBN 1899337024)
  4. M. Ruff, D. Streb, S.U. Dankowski, P. Kiesel, M. Kneissl, G.H. Dohler, U.D. Keil, and A.K. Verma, Low Temperature Grown (Al)GaAs -- A Material to Study the Arsenic Antisite Defect Absorption in an Extended Spectral Range, 5th European Heterostructure Technology Workshop 1995 (ISBN 1899337024)
  5. G.H. Döhler, P. Kiesel, M. Kneissl, N. Linder, K.H. Gulden, P. Riel, X. Wu, J.S. Smith, Electrically and Optically Adressable Spatially Light Modulators Based on n-i-p-i Doping Superlattices , Spatial light modulators and applications, (OSA, Salt Lake City), Technical Digest Series vol. 9, 86-88 (1995)
  6. S. Malzer, H. Bohner, M. Kneissl, N. Linder, U. Pfeiffer, J. Schultz, J. Schonhut, K. Schrufer, S. Smith, and G.H. Dohler, Optical and electrical properties of quantum wells with electrically tunable two-dimensional electron density by selective contacts, Superlattice and Microstructures, Vol. 17, (No. 2) 141-145 (1995)
  7. C. Metzner, K. Schrufer, U. Wieser, M. Luber, M. Kneissl and G.H. Dohler, Disorder effects on luminescence in d-doping n-i-p-i superlattices, Phys. Rev. B, Vol. 51,5106-5115 (1995)
  8. M. Kneissl, P. Kiesel, N. Linder, H. Grothe, G.H. Dohler, Novel electro-optic MSM-modulator based on the two-dimensional Franz-Keldysh effect, Conference on Lasers and Electro-Optics CLEO '95, Baltimore, Technical Digest, Vol. 15, 292 (1995)
  9. P. Kiesel, P. Riel, K. Reingruber, M. Kneissl, B. Knupfer, and G.H. Dohler, Dynamical behaviour of n-i-p photoconductive detectors and switches with separate absorption and detection area, Conference on Lasers and Electro-Optics CLEO '95, Baltimore, Technical Digest, Vol. 15, 180-181 (1995)
  10. N. Linder, P. Kiesel, M. Kneissl, B. Knupfer, S. Quassowski, G. Weimann, and G.H. Dohler, Linearity of double heterostructure electroabsorptive waveguide modulators, IEEE Journal of Quantum Electronics, Vol. 31, No. 9, 1674-1682 (1995)
  11. P. Riel, E. Greger, K. Reingruber, M. Ennes, P. Kiesel, M. Kneissl, G. Trankle, G. Weimann, and G.H. Dohler, Reverse biased photoconductive detectors and switches with separate absorption and detection area, , Appl. Phys. Lett. 66, 1367-1369 (1995)

1994

  1. Schrufer, C. Metzner, U. Wieser, M. Kneissl and G.H. Dohler, Quantum effects of potential fluctuations in GaAs d-doping superlattices, Superlattice and Microstructures, Vol. 15, (No. 4), 413-420 (1994)
  2. P. Kiesel, M. Kneissl, N. Linder, B. Knupfer, S. Quassowski, S.U. Dankowski, P. Riel, and G.H. Dohler, Waveguide modulators based on the Franz-Keldysh effect with linear transmission voltage characteristics, 'CLEO Europe 94' Amsterdam, Technical Digest, 176 (1994)
  3. S.U. Dankowski, P. Kiesel, U.D. Keil, D.R. Dykaar, M. Kneissl, B. Knupfer, R.F. Knopf, and G.H. Dohler, Refractive index changes of low temperature grown GaAs depending on its annealing history, 'CLEO Europe 94' Amsterdam Technical Digest, 367-368 (1994)
  4. S.U. Dankowski, P. Kiesel, B. Knupfer, M. Kneissl, and G.H. Dohler, U.D. Keil, D.R. Dykaar, R.F. Kopf, Annealing Induced Refractive Index and Absorption Changes of Low Temperature Grown GaAs, Appl. Phys. Lett., Vol. 65 (No. 25), 3269-3271 (1994)
  5. M. Kneissl, N. Linder, P. Kiesel, S. Quassowski, K. Schmidt, H. Grothe, G.H. Dohler, Two-Dimensional Franz-Keldysh effect in MQW structures with lateral electric fields, Superlattice and Microstructures, Vol. 16, (No. 2) 109-113 (1994)
  6. K.H. Gulden, M. Kneissl, P. Kiesel, S. Malzer, and G.H. Dohler, Enhanced Absorption Modulation in Hetero n-i-p-i Structures by Constructive Superposition of Field Effects and Phase Space Filling, Appl. Phys. Lett., 64, 457-459 (1994)
  7. M. Kneissl, P. Kiesel, P. Riel, K. Reingruber, K.H. Gulden, E. Greger, A. Hofler, B. Knupfer, X.X. Wu, J.S. Smith, and G.H. Dohler, Dynamical behaviour of opto-optical logic switching devices employing n-i-p-i based smart pixels, 'Optical Computing 94' Edinburgh, Technical Digest, 181-182 (1994)
  8. M. Kneissl, P. Kiesel, P. Riel, K. Reingruber, K.H. Gulden, S.U. Dankowski, E. Greger, A. Hofler, B. Knupfer, X.X. Wu, J.S. Smith, and G.H. Dohler, Demonstration of extremely low switching energies using new n-i-p-i based smart pixels, SPIE Proceedings 2139, 115-129 (1994)
  9. M. Kneissl, K.H. Gulden, P. Kiesel, A. Luczak, S. Malzer, and G.H. Dohler, Constructive Superposition of Field- and Carrier Induced Absorption Changes in Hetero-n-i-p-i Structures, Solid-State Electronics 37, (No. 4-6) 1251-1253 (1994)

1993

  1. N. Linder, T. Gabler, K.H. Gulden, P. Kiesel, M. Kneissl, P. Riel, X. Wu, J. Walker, J.S. Smith, and G.H. Dohler, High Contrast Electrooptic n-i-p-i Doping Superlattice Modulator, Appl. Phys. Lett. 62, 1916-1918 (1993)
  2. P. Kiesel, K.H. Gulden, A. Hofler, M. Kneissl, B. Knupfer, N. Linder, P. Riel, X. Wu, J.S. Smith, and G.H. Dohler, High speed and high contrast electro-optical modulator based on n-i-p-i doping superlattices, Superlattices and Microstructures 13, 21-24 (1993)
  3. X. Wu, K.H. Gulden, M. Thomas, J.S. Smith, J.R. Whinnery, S. Malzer, P. Kiesel, M. Kneissl, and G.H. Dohler, Hetero-nipi Bandfilling Modulator with Latterally Interdigital Contacts Made by Shadow Mask Molecular Beam Epitaxy Regrowth, Appl. Phys. Lett. 62, 152-153 (1993)
  4. X. Wu, K.H. Gulden, M. Thomas, M. Kneissl, G.H. Dohler, J.R. Whinnery, and J.S. Smith, Selectively masked MBE re-growth, Journal of Crystal Growth 127, No. 1-4, 896 (1993)
  5. P. Kiesel, K.H. Gulden, A. Hofler, M. Kneissl, B. Knupfer, P. Riel, X. Wu, J.S. Smith, and G.H. Doehler, Opto-optical Switches, Optical Logic Gates and Memory Cells Realized with Doping Superlattices, Conference on Lasers and Electro-Optics CLEO '93, Baltimore, Technical Digest, vol. 11, 378 (1993)
  6. P. Kiesel, K.H. Gulden, A. Hofler, M. Kneissl, B. Knupfer, P. Riel, X. Wu, J.S. Smith, and G.H. Dohler, Digital and Analog Low Power Opto-electronic and Opto-optical Elements based on n-i-p-i Doping Superlattices, Integrated Photonics Research, Palm Springs, Technical Digest, Vol. 10, 192-195 (1993).
  7. A. Hofler, K.H. Gulden, P. Kiesel, M. Kneissl, B. Knupfer, P. Riel, G. Trankle, G. Weimann, G. Trankle, and G.H. Dohler, Low Power (Bistable) Opto-electrical Threshold Switches with High gain Based on n-i-p-i Doping Superlattices, Appl. Phys. Lett. 62, 3399-3401 (1993)
  8. P. Kiesel, K.H. Gulden, A. Hofler, M. Kneissl, B. Knupfer, P. Riel, X. Wu, J.S. Smith, and G.H. Dohler, Bistable Opto-optical Switches with High Gain based on n-i-p-i Doping Superlattices, Appl. Phys. Lett. 62, 3288-3290 (1993)
  9. K.H. Gulden, P. Kiesel, A. Hofler, M. Kneissl, P. Riel, X. Wu, J.S. Smith, and G.H. Dohler, Novel shadow mask molecular beam epitaxial regrowth technique for selective doping, Appl. Phys. Lett. 62, 3180-3182 (1993)
  10. K.H. Gulden, P. Kiesel, A. Hofler, M. Kneissl, S. Malzer, X. Wu, J.S. Smith, and G.H. Dohler, In situ structured MBE grown crystals for applications in opto-electronics, SPIE Proceeding 1985, 105-115 (1993)
  11. P. Kiesel, K.H. Gulden, A. Hofler, B. Knupfer, M. Kneissl, S. Dankowski, P. Riel, X. Wu, J.S. Smith, G. Weimann and G.H. Dohler, Optical Bistability of p-i-n and n-i-p-i Structures at Very Low Optical Power, SPIE Proc. 1985, 278-288 (1993)
  12. B. Knupfer, P. Kiesel, M. Kneissl, S. Dankowski, N. Linder, G. Weimann, and G.H. Dohler, Polarization-insensitiv High-contrast GaAs/AlGaAs Waveguide Modulator Based on the Franz-Keldysh Effect, IEEE Photonics Technology Letters, 5, 1386-1388 (1993)

1992

  1. P. Riel, P. Kiesel, M. Ennes, Th. Gabler, M. Kneissl, G. Bohm, G. Trankle, G. Weimann, K.H. Gulden, X.X. Wu, J.S. Smith, and G.H. Dohler, N-i-p-i- based High-Speed Detectors and Bistable Switches with Gain, Quantum Well and Superlattice Physics IV", SPIE Proc. 1675, 242-254 (1992)
  2. S. Malzer, N. Linder, K.H. Gulden, A. Hofler, P. Kiesel, M. Kneissl, X. Wu, J.S. Smith, and G.H. Dohler, Optical Nonlinearities in n-i-p-i and Hetero n-i-p-i Structures, phys. stat. sol. (b) 173, 459-472 (1992)

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