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TU Berlin

Inhalt des Dokuments

Dr. Andrea Lenz

Lupe [1]

TU Berlin
Institut für Festkörperphysik
EW 4-1, Room 415
Hardenbergstr. 36
10623 Berlin

e-mail: alenz@physik.tu-berlin.de [2]
phone: 0049-(0)30-314-22057
fax: 0049-(0)30-314-26181

Research Projects

2014 - 2020
Scanning tunneling microscopy and -spectroscopy of GaP layers on Si(001)
Project LE 3317/1-2 [3]

Scientific Visits

2014, July to October
Postdoctoral Fellow with Prof. Minjoo Larry Lee [4] (at ECE Illinois since 2016)
Department of Electrical Engineering
Yale University (New Haven, USA)

Publications (selection)

Publication list (last updated: 06/2020) [5]

A. Lenz, O. Supplie, E. Lenz, P. Kleinschmidt, and T. Hannappel,
Interface of GaP/Si(001) and antiphase boundary facet-type determination,
J. Appl. Phys. 125, 045304 (2019).
https://doi.org/10.1063/1.5080547
[6]
P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz and A. Lenz,
Three dimensional structure of antiphase domains in GaP on Si(001),
J. Phys.: Condens. Matter 31, 144001 (2019).
https://doi.org/10.1088/1361-648X/aafcfb [7]

C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, and A. Lenz,
Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001),
J. Vac. Sci. Technol. A 34, 031102 (2016).
http://dx.doi.org/10.1116/1.4945992
[8]
C.S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S.J. Maddox, S.D. March, S.R. Bank, M.L. Lee, and A. Lenz,
Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate,
Appl. Phys. Lett. 108, 143101 (2016).
http://dx.doi.org/10.1063/1.4945598
[9]
D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reitzenstein, and D. Bimberg, M. Lehmann, M. Weyland,
Strong charge carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy,
Phys. Rev. B 91, 235418 (2015).
http://dx.doi.org/10.1103/PhysRevB.91.235418
[10]
A. Lenz and H. Eisele
Self-organized Formation and XSTM-Characterization of GaSb/GaAs Quantum Rings
in PHYSICS OF QUANTUM RINGS, Springer-Series: NanoScience and Technology
Fomin, Vladimir M. (Ed.), ISBN: 978-3-642-39196-5 (Print) 978-3-642-39197-2 (Online) (2014).
http://www.springer.com/us/book/9783642391965
[11]
A. Lenz, E. Tournie, J. Schuppang, M. Dähne, and H. Eisele,
Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures,
Appl. Phys. Lett. 102, 102105 (2013).
http://dx.doi.org/10.1063/1.4795020 [12]

A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U. W. Pohl, and M. Dähne,
Formation of InAs/InGaAsP quantum-dashes on InP(001),
Appl. Phys. Lett. 95, 203105 (2009).
http://dx.doi.org/10.1063/1.3265733
[13]
A. Lenz, Dr. rer. nat. (Ph.D.)
Atomic structure of capped In(Ga)As and GaAs quantum dots for optoelectronic devices,
Dissertation (2008).
http://dx.doi.org/10.14279/depositonce-1791
[14]
A. Lenz, H. Eisele, R. Timm, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne,
Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy,
Appl. Phys. Lett. 85, 3848 (2004)
http://dx.doi.org/10.1063/1.1808884 [15]

A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne, Reversed truncated cone composition distribution of In0,8Ga0,2As quantum dots overgrown by an In0,1Ga0,9As layer in a GaAs matrix,
Appl. Phys. Lett. 81, 5150 (2002).
https://doi.org/10.1063/1.1533109 [16]

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