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TU Berlin

Inhalt des Dokuments

Dr. Andrea Lenz

Lupe

TU Berlin
Institut für Festkörperphysik
EW 4-1, Room 415
Hardenbergstr. 36
10623 Berlin

e-mail:
phone: 0049-(0)30-314-22057
fax: 0049-(0)30-314-26181

Research

I am principal investigator of the project scanning tunneling microscopy and -spectroscopy of GaP layers on Si(001) supported by the German Research Foundation DFG, Project LE 3317/1-2. In this project the structural and electronic properties of antiphase boundaries and their influence on nano-structured samples will be investigated. The goal is to achieve a physical understanding of the growth processes at the GaP/Si(001) interface as well as of the structural and electronical properties of defects within the GaP layer.

My main research backgrounds are the structural and electronic properties of III-V semiconductor surfaces, interfaces and nanostructures as well as nitride semiconductors. Using cross-sectional scanning tunneling microscopy and -spectroscopy these material systems can be investigated on the atomic scale. This leads to a fundamental understanding of growth and formation processes resulting in an optimization of optoelectronic devices.

Scientific Visits

  • 2014, July to October
    Postdoctoral Fellow with Prof. Minjoo Larry Lee (at ECE Illinois since 2016)
    Department of Electrical Engineering
    Yale University (New Haven, USA)

Publications (selection)

Publication list (last updated: 12/2019)

 

A. Lenz, O. Supplie, E. Lenz, P. Kleinschmidt, and T. Hannappel,
Interface of GaP/Si(001) and antiphase boundary facet-type determination,
J. Appl. Phys. 125, 045304 (2019).
https://doi.org/10.1063/1.5080547

P. Farin, M. Marquardt, W. Martyanov, J. Belz, A. Beyer, K. Volz and A. Lenz,
Three dimensional structure of antiphase domains in GaP on Si(001),
J. Phys.: Condens. Matter 31, 144001 (2019).
https://doi.org/10.1088/1361-648X/aafcfb

C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, and A. Lenz,
Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001),
J. Vac. Sci. Technol. A 34, 031102 (2016).
http://dx.doi.org/10.1116/1.4945992

C.S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S.J. Maddox, S.D. March, S.R. Bank, M.L. Lee, and A. Lenz,
Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate,
Appl. Phys. Lett. 108, 143101 (2016).
http://dx.doi.org/10.1063/1.4945598

D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reitzenstein, and D. Bimberg, M. Lehmann, M. Weyland,
Strong charge carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy,
Phys. Rev. B 91, 235418 (2015).
http://dx.doi.org/10.1103/PhysRevB.91.235418

A. Lenz and H. Eisele
Self-organized Formation and XSTM-Characterization of GaSb/GaAs Quantum Rings
in PHYSICS OF QUANTUM RINGS, Springer-Series: NanoScience and Technology
Fomin, Vladimir M. (Ed.), ISBN: 978-3-642-39196-5 (Print) 978-3-642-39197-2 (Online) (2014)
http://www.springer.com/us/book/9783642391965

A. Lenz, E. Tournie, J. Schuppang, M. Dähne, and H. Eisele,
Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures,
Appl. Phys. Lett. 102, 102105 (2013)
http://dx.doi.org/10.1063/1.4795020

A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U. W. Pohl, and M. Dähne,
Formation of InAs/InGaAsP quantum-dashes on InP(001),
Appl. Phys. Lett. 95, 203105 (2009)
http://dx.doi.org/10.1063/1.3265733

A. Lenz, Dr. rer. nat. (Ph.D.)
Atomic structure of capped In(Ga)As and GaAs quantum dots for optoelectronic devices,
Dissertation (2008)

A. Lenz, H. Eisele, R. Timm, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne,
Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy,
Appl. Phys. Lett. 85, 3848 (2004)
http://dx.doi.org/10.1063/1.1808884

A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne,
Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix,
Appl. Phys. Lett. 81, 5150 (2002)
http://dx.doi.org/10.1063/1.1533109

 

 

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