5. A. Lenz and H. Eisele,
Self-Organized Formation and XSTM-Characterization of GaSb/GaAs Quantum Rings,
in Physics of Quantum Rings, ed. by V. Fomin, Springer, Berlin, 2014,
ISBN 3-642-39197-2

4. H. Eisele,
The atomic composition of semiconductor quantum dots and related nanostructures, Habilitation thesis at the Technische Universität Berlin, Universitätsbibliothek TU Berlin, D-83 (2013).

3. M. Dähne, H. Eisele, and K. Jacobi,
The Atomic Structure of Quantum Dots,
in Semiconductor Nanostructures, ed. by D. Bimberg, Springer, Berlin, 2008,
ISBN 3-540-77898-5

2. M. Dähne and H. Eisele,
Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots,
in Nano-Optoelectronics, ed. by M. Grundmann, Springer, Berlin, 2002,
ISBN 3-540-43394-5

1. H. Eisele,
Cross-Sectional Scanning Tunneling Microscopy of InAs/GaAs Quantum Dots,
in Berlin Studies in Solid State Physics, 10, ed. by D. Bimberg, M. Dähne, W. Richter, and C. Thomsen, Wissenschaft & Technik Verlag, Berlin, 2002,
ISBN 3-89685-388-0

69. L. Zhang, V. Portz, M. Schnedler, L. Jin, Y.H. Wang, X.P. Hao, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM, Phil. Mag. 98, 3072 (2018).

68. V. Portz, M. Schnedler, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Electron affinity and surface states of GaN m-plane facets: Implication for electronic self-passivation, Phys. Rev. B 97, 115433 (2018).

67. V. Portz, M. Schnedler, L. Lymperakis, J. Neugebauer, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R.E. Dunin-Borkowski, and Ph. Ebert, Fermi level pinning and intrinsic surface states of Al_1-xIn_xN(1010) surfaces, Appl. Phys. Lett. 110, 022104 (2017).

66. F.-M. Hsiao, M. Schnedler, V. Portz, Y.-C. Huang, B.-C. Huang, M.-C. Shih, C.-W. Chang, L.-W. Tu, H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, and Y.-P. Chiu, Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy, J. Appl. Phys. 121, 015701 (2017).

65. H. Eisele, J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, A. Hoffmann, S. Gwo, S. Choi, J.S. Speck, R.E. Dunin-Borkowski, and Ph. Ebert, Intrinsic electronic properties of high-quality wurtzite InN, Phys. Rev. B 94, 245201 (2016).

64. M. Schnedler, I. Lefebvre, T. Xu, V. Portz, G. Patriarche, J.P. Nys, S. Plissard, P. Caroff-Gaonac'h, M. Berthe, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Lazarevicite-type short-range ordering in ternary III-V nanowires, Phys. Rev. B 94, 195306 (2016).

63. V. Portz, M. Schnedler, M. Duchamp, F.-M. Hsiao, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R.E. Dunin-Borkowski, and Ph. Ebert, Strain and compositional fluctuations in Al_0.81In_0.19N/GaN heterostructures, Appl. Phys. Lett. 109, 132102 (2016).

62. S. Harrison, M.P. Young, P.D. Hodgson, R.J. Young, M. Hayne, L. Danos, A. Schliwa, A. Strittmatter, A. Lenz, H. Eisele, U.W. Pohl, and D. Bimberg, Heterodimensional charge-carrier confinement in stacked sub-monolayer InAs in GaAs, Phys. Rev. B 93, 085302 (2016).

61. P.H. Weidlich, M. Schnedler, V. Portz, H. Eisele, U. Strauss, R.E. Dunin-Borkowski, and Ph. Ebert, Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy, J. Appl. Phys. 118, 035302 (2015).

60. D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reizenstein, D. Bimberg, M. Lehmann, and M. Weyland, Strong charge-carrier localization in InAs/GaAs sub-monolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy,
Phys. Rev. B 91, 235418 (2015).

59. M. Schnedler, V. Portz, H. Eisele, R. E. Dunin-Borkowski, and Ph. Ebert,
Polarity-⁠dependent pinning of a surface state,
Phys. Rev. B 91, 205309 (2015).

58. D.M. Eisele, D.H. Arias, X. Fu , E.A. Bloemsma, C.P. Colby, R.A. Jensen, P. Rebentrost, H. Eisele, A. Tokmakoff, S. Lloyd, K.A. Nelson, D. Nicastro, J. Knoester, and M.G. Bawendi,
Robust Excitons Inhabit Soft Supra-⁠molecular Nanotubes,
Proc. Natl. Acad. Sci. U. S. A. 111, E3367 (2014).

57. P.H. Weidlich, M. Schnedler, V. Portz, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert,
Meandering of overgrown v-⁠shaped defects in epitaxial GaN layers,
Appl. Phys. Lett. 105, 012105 (2014).

56. A. Lin, J.N. Shapiro, H. Eisele, and D.L. Huffaker,
Tuning the Au-free InSb Nanocrstal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition,
Adv. Funct. Mater. 24, 4311 (2014).

55. L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.-P. Nys, B. Grandidier, D. Stièvenard, R.E. Dunin-Borkowski, J. Neugebauer, and Ph. Ebert,
Hidden surface states at non-polar GaN(1010) facets: Intrinsic pinning of nanowires,
Appl. Phys. Lett. 103, 152101 (2013).

54. P.H. Weidlich, M. Schnedler, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert,
Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers,
Appl. Phys. Lett. 103, 142105 (2013).

53. P.H. Weidlich, M. Schnedler, H. Eisele, U. Strauß, R.E. Dunin-Borkowski, and Ph. Ebert,
Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers,
Appl. Phys. Lett. 103, 062101 (2013).

52. C. Prohl, A. Lenz, D. Roy, J. Schuppang, G. Stracke, A. Strittmatter, U.W. Pohl, D. Bimberg, H. Eisele, and M. Dähne,
Spatial structure of In_0.25Ga_0.75As/GaAs/GaP quantum dots on the atomic scale,
Appl. Phys. Lett. 102, 123102 (2013).

51. A. Lenz, E. Tournié, J. Schuppang, M. Dähne, and H. Eisele,
Atomic structure of tensile-⁠strained GaAs/⁠GaSb(001) nanostructures,
Appl. Phys. Lett. 102, 102105 (2013).

50. A. Sabitova, Ph. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R.E. Dunin-Borkowski, A. Förster, B. Grandidier, and H. Eisele,
Intrinsic band gap of cleaved ZnO(1120) surfaces,
Appl. Phys. Lett. 102, 021608 (2013).

49. H. Eisele, Ph. Ebert, N. Liu, A.L. Holmes, and C.-⁠K. Shih,
Reverse mass transport during capping of In_0.5Ga_0.5As/⁠GaAs quantum dots,
Appl. Phys. Lett. 101, 233107 (2012).

48. G. Stracke, A. Glacki, T. Nowozin, L. Bonato, S. Rodt, C. Prohl, A. Lenz, H. Eisele, A. Schliwa, A. Strittmatter, U.W. Pohl, and D. Bimberg,
Growth of In_0.25Ga_0.75As quantum dots on GaP utilizing a GaAs interlayer,
Appl. Phys. Lett. 101, 223110 (2012).

47. H. Eisele and Ph. Ebert,
Non-⁠polar group-⁠III nitride semiconductor surfaces,
Phys. Stat. Solidi RRL 6, 359 (2012).

46. H. Eisele and M. Dähne,
Critical thickness of the two to three dimensional transition in GaSb/GaAs(001) quantum dot growth,
J. Cryst. Growth 338, 103 (2012).

45. A. Lenz, H. Eisele, J. Becker, J.-H. Schulze, T. D. Germann, F. Luckert, K. Pötschke, E. Lenz, L. Ivanova, A. Strittmatter, D. Bimberg, U.W. Pohl, and M. Dähne,
Atomic structure and optical properties of InAs submonolayer depositions in GaAs,
J. Vac. Sci. Technol. B 29, 04D104 (2011).

44. M. P. Vaughan, S. Fahy, E. P. O'Reilly, L. Ivanova, H. Eisele, and M. Dähne,
Modelling and direct measurement of the density of states in GaAsN,
Phys. Status Solidi B 248, 1167-1171 (2011).

43. Ph. Ebert, S. Schaafhausen, A. Lenz, A. Sabitova, L. Ivanova, M. Dähne, Y.-L. Hong, S. Gwo, and H. Eisele,
Direct measurement of the band gap and Fermi level position at InN(11-20),
Appl. Phys. Lett. 98, 062103 (2011).

42. A. Lenz, H. Eisele, J. Becker, L. Ivanova, E. Lenz, F. Luckert, K. Pötschke, A. Strittmatter, U.W. Pohl, D. Bimberg, and M. Dähne,
Atomic structure of buried InAs submonolayer depositions in GaAs,
Appl. Phys. Express 3, 105602 (2010).

41. R. Timm, H. Eisele, A. Lenz, L. Ivanova, V. Voßebürger, T. Warming, D. Bimberg, M. Dähne, I. Farrer, and D.A. Ritchie,
Confined states of individual type-II GaSb/GaAs quantum dots studied by cross-sectional scanning tunneling spectroscopy,
Nano Lett. 10, 3972 (2010).

40. L. Ivanova, H. Eisele, M.P. Vaughan, Ph. Ebert, A. Lenz, R. Timm, O. Schumann, L. Geelhaar, M. Dähne, S. Fahy, H. Riechert, and E.P. O’Reilly,
Direct measurement and analysis of the conduction band density of states in diluted GaAsN alloys,
Phys. Rev. B 82, 161201(R) (2010).

39. C. Prohl, B. Höpfner, J. Grabowski, M. Dähne, and H. Eisele,
Atomic structure and strain of the InAs wetting layer growing on GaAs(001)-c(4×4),
J. Vac. Sci. Technol. B 28, C5E13 (2010).

38. H. Eisele, S. Borisova, L. Ivanova, M. Dähne, and Ph. Ebert,
Cross-sectional scanning tunneling mircoscopy and spectroscopy of non-polar GaN (1-100) surfaces,
J. Vac. Sci. Technol. B 28, C5G11 (2010).

37. F. Genz, A. Lenz, H. Eisele, L. Ivanova, R. Timm, U.W. Pohl, M. Dähne, D. Franke,and H. Künzel, InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum dash formation with InGaAsP decomposition,
J. Vac. Sci. Technol. B 28,C5E1 (2010).

36. L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar, and H. Riechert,
Effect of Nitrogen on the InAs/GaAs quantum dot shape,
phys. stat. sol.(c) 7, 355 (2010); Erratum, phys. stat. sol. (c) 7, 2793 (2010).

35. H. Eisele, B. Höpfner, C. Prohl, J. Grabowski, and M. Dähne,
Atomic structure of the(4×3) reconstructed InGaAs monolayer on GaAs(001),
Surf. Sci. 604, 283 (2010).

34. A.A. Khajetoorians, W. Zhu, J. Kim, S. Qin, H. Eisele, Zh. Zhang, and C.-K. Shih,
Adsobate-induced Restructuring of Pb mesas Grown on Vicinal Si(111) in the Quantum Regime,
Phys. Rev. B 80, 245426 (2009).

33. J. Grabowski, C. Prohl, B. Höpfner, M. Dähne, and H. Eisele,
Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale,
Appl. Phys. Lett. 95, 233118 (2009).

32. A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne,
Formation of InAs/InGaAsP Quantum-Dashes on InP(001),
Appl. Phys. Lett. 95, 203105 (2009).

31. Ph. Ebert, L. Ivanova, and H. Eisele,
Scanning tunneling microscopy on unpinnedGaN (1-100) surfaces: Invisibility of valence band states,
Phys. Rev. B 80, 085316 (2009).

30. H. Eisele, L. Ivanova, S. Borisova, M. Dähne, M. Winkelnkemper, and Ph. Ebert,
Doping Modulation in GaN imaged by cross-sectional scanning tunnelingmicroscopy,
Appl. Phys. Lett. 94, 162110 (2009).

29. R. Timm, R.M. Feenstra, H. Eisele, A. Lenz, L. Ivanova, M. Dähne, and E. Lenz,
Contrast Mechanisms in Cross-Sectional Scanning Tunneling Microscopy of GaSb/GaAs type-II Nanostructures,
J. Appl. Phys. 105, 093718 (2009).

28. Ph. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, and M. Dähne,
Structureand electronic properties of dislocations in GaN,
Appl. Phys. Lett. 94, 062104 (2009).

27. A. Lenz, H. Eisele, R. Timm, L. Ivanova, R.L. Sellin, H.-Y. Liu, M. Hopkinson, U.W. Pohl, D. Bimberg, and M. Dähne,
Limits of In(Ga)As/GaAs quantum dot growth,
phys. stat. sol. (b) 246, 717 (2009).

26. R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D.L. Huffaker, and M. Dähne,
Self-organized formation of GaSb/GaAs quantum rings,
Phys. Rev. Lett. 101, 256101 (2008).

25. L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert,
Surface states and origin of the Fermi level pinning on non-polar GaN (1-100) surfaces,
Appl. Phys. Lett. 93, 192110 (2008).

24. H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi,
Change of InAs/GaAs Quantum Dot Structure during Capping,
J. Appl. Phys. 104, 124301 (2008).

23. R. Timm, A. Lenz, H. Eisele, L. Ivanova, M. Dähne, G. Balakrishnan, D.L. Huffaker, I. Farrer, and D.A. Ritchie,
Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures,
J. Vac. Sci. Technol. B 26, 1492 (2008).

22. A. Lenz, H. Eisele, R. Timm, L. Ivanova, H.-Y. Liu, M. Hopkinson, U.W. Pohl, and M. Dähne,
Structure of InAs quantum dots-in-a-well nanostructures,
Physica E 40, 1988 (2008).

21. L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar, and H. Riechert,
Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix,
Appl. Phys. Lett. 92, 203101 (2008).

20. N.N. Ledentsov, D. Bimberg, F. Hopfer, A. Mutig, V.A. Shchukin, A.V. Savef’ev, G. Fiol, E. Stock, H. Eisele, M. Dähne, D. Gerthsen, U. Fischer, D. Litvinov, A. Rosenauer, S.S. Mikhrin, A.R. Kovsh, N.D. Zakharov, and P. Werner,
Submonolayer Quantum Dots for High Speed Surface Emitting Lasers,
Nanoscale Res. Lett. 2, 417 (2007).

19. F. Hopfer, A. Mutig, G. Fiol, M. Kuntz, V. Shchukin, V.A. Haisler, T. Warming, E.Stock, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dähne, N.N. Ledentsov, and D. Bimberg,
20 Gb/s 85°C Error Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots,
IEEE J. Select. Topics in Quantum Elec. 13, 1302 (2007).

18. H. Eisele and K. Jacobi,
Erratum on Atomically Resolved Structure of InAs Quantum Dots [Appl. Phys. Lett. 78, 2309 (2001)],
Appl. Phys. Lett. 90, 129902 (2007).

17. A. Lenz, R. Timm, H. Eisele, L. Ivanova, D. Martin, V. Vossebürger, A. Rastelli, O.G. Schmidt, and M. Dähne,
Structural investigation of hierarchically selfassembled GaAs/AlGaAs quantum dots,
phys. stat. sol. (b) 243, 3976 (2006).

16. R. Timm, A. Lenz, H. Eisele, L. Ivanova, K. Pötschke, U.W. Pohl, D. Bimberg, G. Balakrishnan, D. Huffaker, and M. Dähne,
Onset of GaSb/GaAs quantum dot formation,
phys. stat. sol. (c) 3, 3971 (2006).

15. I. Engelhardt, C. Preinesberger, S.K. Becker, H. Eisele, and M. Dähne,
Atomic Structure of thin dysprosium-silicide layers on Si(111),
Surf. Sci. 600, 755 (2006).

14. R. Timm, A. Lenz, H. Eisele, T.-Y. Kim, F. Streicher, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne,
Structure of InAs/GaAs Quantum Dots grown with Sb surfactant,
Physica E 32, 25 (2006).

13. O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, and H. Riechert,
Effects of strain and confinement on the emission wavelength of InAs quantum dotsdue to a GaAs_1-xN_x capping layer,
Phys. Rev. B 71, 245316 (2005).

12. R. Timm, J. Grabowski, H. Eisele, A. Lenz, S.K. Becker, L. Müller-Kirsch, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne,
Formation and atomicstructure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy,
Physica E 26, 231 (2005);
H. Eisele, R. Timm, and M. Dähne, Erratum, Physica E 41, 1886 (2009).

11. R. Timm, H. Eisele, A. Lenz, S.K. Becker, J. Grabowski, T.-Y. Kim, L. Müller-Kirsch, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne,
Structure and intermixing of GaSb/GaAs quantum dots,
Appl. Phys. Lett. 85, 5890 (2004).

10. A. Lenz, H. Eisele, R. Timm, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne,
Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectionalscanning tunneling microscopy,
Appl. Phys. Lett. 85, 3848 (2004).

9. K. Hodeck, I. Manke, M. Geller, R. Heitz, F. Heinrichsdorff, A. Krost, D. Bimberg, H. Eisele and M. Dähne,
Multiline photoluminescence of single InGaAs quantum dots,
phys. stat. sol. (c) 0, 1209 (2003).

8. H. Eisele, R. Timm, A. Lenz, Ch. Hennig, M. Ternes, S.K. Becker, and M. Dähne,
Segregation effects during GaAs overgrowth of InAs and InGaAs quantum dotsstudied by cross-sectional scanning tunneling microscopy,
phys. stat. sol. (c) 0, 1129 (2003).

7. H. Eisele, A. Lenz, Ch. Hennig, R. Timm, M. Ternes, and M. Dähne,
Atomic Structure of InAs and InGaAs Quantum Dots Determined by Cross-Sectional Scanning Tunneling Microscopy,
J. Cryst. Growth 248, 322 (2003).

6. A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne,
Reversed truncated cone composition distribution of In_0.8Ga_0.2As quantum dots overgrown by an In_0.1Ga_0.9As layer in a GaAs matrix,
Appl. Phys. Lett. 81, 5150 (2002).

5. H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch,
The stoichiometry of InAs quantum dots determined by crosssectional scanning-tunneling microscopy,
phys. stat. sol. (b) 215, 865 (1999).

4. O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch,
Atomic structure of stacked InAs quantum dots grown by metalorganic chemical-vapor deposition,
J. Vac. Sci. Technol. B 17, 1639 (1999).

3. H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch,
Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots,
Appl. Phys. Lett. 75, 106 (1999).

2. H. Eisele, O. Flebbe, T. Kalka, and M. Dähne-Prietsch,
Cross-sectional STM of InAs Quantum Dots for Laser Devices,
Surf. Interface Anal. 27, 537 (1999).

1. S. Vandré, T. Kalka, C. Preinesberger, I. Manke, H. Eisele, M. Dähne-Prietsch, R. Meier, E. Weschke, and G. Kaindl,
Growth and electronic structure of Dy silicide on Si(111),
Appl. Surf. Sci. 123/124, 100 (1998).

10. A. Lenz, H. Eisele, F. Genz, U.W. Pohl, M. Dähne, D. Franke, and H. Künzel,
Atomic ordering and decomposition of lattice matched In_xGa_1-xAs_yP_1-y on InP(001),
VDE Proceedings of the 23rd International Conference on Indium Phosphide and Related Materials, 62, (2011).

9. A. Lenz, H. Eisele, F. Genz, L. Ivanova, R. Timm, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne, Formation of InAs/InGaAsP Quantum Dashes,
Proceedings of the 30th International Conference on the Physics of Semiconductors, AIP Conf. Proc., in press (2011).

8. N.N. Ledentsov, F. Hopfer, A. Mutig, V.A. Shchukin, A.V. Savel'ev, G. Fiol, M. Kuntz, V.A. Haisler, T. Warming, E. Stock, S.S. Mikhrin, A.R. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dähne, N.D. Zakharov, P. Werner, and D. Bimberg,
Novel concepts for ultrahigh-speed quantum-dot VCSELs and edgeemitters,
Proceedings of the SPIE 6468, 64681O (2007).

7. R. Timm, A. Lenz, J. Grabowski, H. Eisele, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne,
Formation and Atomic Structure of GaSb Quantum Dots in GaAs Studied by Cross-Sectional Scanning Tunneling Microscopy,
Proceedings of the 11th European Workshop on MOVPE, 39 (2005).

6. A. Lenz, H. Eisele, R. Timm, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne,
Limits of InGaAs/GaAs quantum dot growth studied by cross-sectional scanning tunneling microscopy,
Proceedings of the 11th European Workshop on MOVPE, 31 (2005).

5. R. Timm, A. Lenz, J. Grabowski, H. Eisele, and M. Dähne,
A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures,
Proceedings of the 14th Conference on Microscopy of Semiconducting Materials, Springer Proceedings in Physics 107, 479 (2005).

4. O. Flebbe, H. Eisele, R. Timm, and M. Dähne,
Room-Temperature Observation of Standing Electron Waves on GaAs(110) at Surface Steps,
Proceedings of 12th International Conference on Scanning Tunneling Microscopy/Spectroscopy and
Related Techniques, AIP Conf. Proc. 696, 699 (2003).

3. S.K. Becker, J. Grabowski, T.-Y. Kim, L. Amsel, F. Bechtel, N. Tschirner, I. Mantouvalou, A. Lenz, R. Timm, K. Hodeck, F. Streicher, G. Pruskil, H. Eisele, and M. Dähne,
Low budget UHV STM built by physics students for use in a laboratory exercise course,
Proceedings of 12th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, AIP Conf. Proc. 696, 216 (2003).

2. H. Eisele, A. Lenz, R. Timm, Ch. Hennig, M. Ternes, F. Heinrichsdorff, A. Krost, R.L. Sellin, U.W. Pohl, D. Bimberg, T. Wehnert, E. Steimetz, W. Richter, and M. Dähne,
Atomic Structure of InAs and InGaAs Quantum Dots Studied by Cross-Sectional Scanning Tunneling Microscopy,
Proceedings of the 24th International Conference on the Physics of Semiconductors, IoP Conf. Series, 171, P199 (2003).

1. S.K. Becker, C. Preinesberger, I. Engelhardt, M. Wanke, S. Vandré, H. Eisele, and M. Dähne,
Self-assembled structures of Dy silicides on Si(001) and Si(111) surfaces,
Proceedings of the 24th International Conference on the Physics of Semiconductors, IoP Conf. Series, 171, D9 (2003).