TU Berlin

Arbeitsgruppe Prof. Dr. M. Dähne2016 - 2018

Inhalt des Dokuments

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Veröffentlichungen 2016 -

  • Electron affinity and surface states of GaN m-plane facets: Implication for electronic self-passivation, V. Portz, M. Schnedler, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Phys. Rev B 97, 115433 (2018)
  • Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM,L. Zhang, V. Portz, M. Schnedler, L. Jin, Y.H. Wang, X.P. Hao, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Phil. Mag. 98, 3072 (2018)
  • Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy, F.-M. Hsiao, M. Schnedler, V. Portz, Y.-C. Huang, B.-C. Huang, M.-C. Shih, C.-W. Chang, L.-W. Tu, H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, and Y.-P. Chiu,
    J. Appl. Phys. 121, 015701 (2017)
  • Fermi level pinning and intrinsic surface states of Al1-xInxN(1010) surfaces, V. Portz, M. Schnedler, L. Lymperakis, J. Neugebauer, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R.E. Dunin-Borkowski, and Ph. Ebert, Appl. Phys. Lett., 110, 022104 (2017)
  • Optical anisotropy of quasi-1D rare-earth silicide nanostructures on Si(001), S. Chandola, E. Speiser, N. Esser, S. Appelfeller, M. Franz, M. Dähne, Applied Surface Science 399, 648 (2017)
  • Growth and electronic properties of Tb silicide layers on Si(111), Martin Franz, Stephan Appelfeller, Christopher Prohl, Jan Große, Hans-Ferdinand Jirschik, Vivien Füllert, Christian Hassenstein, Zeno Diemer, and Mario Dähne, J. Vac. Sci. Technol. A 34, 061503 (2016).
  • The electronic structure of Tb silicide nanowires on Si(001), S. Appelfeller, M. Franz, H.-F. Jirschik, J. Große, and M. Dähne, New J. Phys. 18, 113005 (2016).
  • Strain-induced quasi-one-dimensional rare-earth silicide structures on Si(111), F. Timmer, R. Oelke, C. Dues, S. Sanna, W. G. Schmidt, M. Franz, S. Appelfeller, M. Dähne, and J. Wollschläger, Phys. Rev. B 94, 205431 (2016).
  • Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments, M. Franz, J. Schmermbeck, and M. Dähne, J. Vac. Sci. Technol. B 34, 04J101 (2016).
  • Rare-earth silicide thin films on the Si(111) surface, S. Sanna, C. Dues, W.G. Schmidt, F. Timmer, J. Wollschläger, M. Franz, S. Appelfeller, and M. Dähne, Phys. Rev. B 93, 195407 (2016).
  • Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001), C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, and A. Lenz, J. Vac. Sci. Technol. A 34, 031102 (2016).
  • Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate, C.S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S.J. Maddox, S.D. March, S.R. Bank, M.L. Lee and A. Lenz, Appl. Phys. Lett. 108, 143101 (2016).
  • Atomic size effects studied by transport in single silicide nanowires, I. Miccoli, F. Edler, H. Pfnür, S. Appelfeller, M. Dähne, K. Holtgrewe, S. Sanna, W. G. Schmidt, and C. Tegenkamp, Phys. Rev. B 93, 125412 (2016).
  • Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAsS. Harrison, M.P. Young, P.D. Hodgson, R.J. Young, M. Hayne, L. Danos, A. Schliwa, A. Strittmatter, A. Lenz, H. Eisele, U.W. Pohl, and D. Bimberg, Phys. Rev. B 93, 085302 (2016).
  • Capping of rare earth silicide nanowires on Si(001), S. Appelfeller, M.Franz, M. Kubicki, P. Reiß, T. Niermann, M.A. Schubert, M. Lehmann and M. Dähne, Appl. Phys. Lett. 108, 013109 (2016).





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