Low density of states at the epitaxial CaF₂/Si(111) interface, M. Dähne-Prietsch, I. Manke, T. Kalka, H.J. Wen, and G. Kaindl, Journal of Physics D: Applied Physics 30, L48 (1997).

Growth and electronic structure of epitaxial interfaces of Dy and Er silicides with Si(111),I. Manke, T. Kalka, M. Dähne-Prietsch, H.J. Wen, and G. Kaindl, in: The physics of semiconductors, ed. by M. Scheffler and R. Zimmermann, p. 1071 (World Scientific, Singapore, 1996).

Ballistic-electron emission microscopy at Au/Si(111): indication of k_||-conservation at non-epitaxial interfaces, T. Kalka, M. Dähne-Prietsch, and G. Kaindl, in: The physics of semiconductors, ed. by M. Scheffler and R. Zimmermann, p. 1015 (World Scientific, Singapore, 1996).

Lateral confinement of surface states on stepped Cu(111), O. Sánchez, J.M. García, P. Segovia, J. Alvarez, A.L. Vázquez de Parga, J.E. Ortega, M. Prietsch, and R. Miranda,  Physical Review B 52, 7894 (1995).

Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al-induced p⁺-doping,
H.J. Wen, M. Dähne-Prietsch, A. Bauer, M.T. Cuberes, I. Manke, and G. Kaindl, Journal of Vacuum Science and Technology A 13, 2399 (1995).

Formation of the CeSi_x/Si(111) interface, I. Manke, H.J. Wen, A. Höhr, A. Bauer, M. Dähne- Prietsch, and G. Kaindl, Journal of Vacuum Science and Technology B 13, 1657 (1995).

Stability of CaF₂/Si(111) and Al/CaF₂/Si(111) interface systems studied with photoelectron spectroscopy and scanning-tunneling microscopy,H.J. Wen, M. Dähne-Prietsch, A. Bauer, I. Manke, and G. Kaindl, Journal of Vacuum Science and Technology B 13, 1645 (1995).

p⁺-doping of Si by Al diffusion upon annealing Al/n-Si(111),H.J. Wen, M. Prietsch, A. Bauer, M.T. Cuberes, I. Manke, and G. Kaindl, Applied Physics Letters 66, 3010 (1995).

Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution,Mario Prietsch, Physics Reports 253, 163 (1995).

Surface localized states on InAs(110), D.M. Swanston, A.B. McLean, D.N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch, and N.J. DiNardo, Surface Science 312, 361 (1994).

Probing the CaF₂ density of states at Au/CaF₂/n-Si(111) interfaces with photoelectron spectroscopy and ballistic-electron emission microscopy, M.T. Cuberes, A. Bauer, H.J. Wen, M. Prietsch, and G. Kaindl, Journal of Vacuum Science and Technology B 12, 2646 (1994).

Ballistic-electron emission microscopy at the Au/n-Si(111)7×7 interface,M.T. Cuberes, A. Bauer, H.J. Wen, D. Vandré, M. Prietsch, and G. Kaindl,  Journal of Vacuum Science and Technology B 12, 2422 (1994).

Ballistic-electron emission microscopy study of the Au/Si(111)7×7 and Au/CaF₂/Si(111)7×7 interfaces, M.T. Cuberes, A. Bauer, H.J. Wen, M. Prietsch, and G. Kaindl, Applied Physics Letters 64, 2300 (1994).

Hot-electron transport in ballistic-electron emission microscopy: influence of impact ionization,A. Bauer, M.T. Cuberes, M. Prietsch, G. Kaindl, and R. Ludeke, in: Formation of semiconductor interfaces, ed. by B. Lengeler, H. Lüth, W. Mönch, and J. Pollmann, p. 333 (World Scientific, Singapore, 1994).