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TU Berlin

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Cross-sectional scanning tunneling microscopy


For an investigation of semiconductor interfaces or nanostructures buried under a capping layer, cross-sectional STM (XSTM) can be used. In such an experiment, the sample is cleaved, so that the buried semiconductor structures can be accessed from the side. Special lateral positioning of the scan head is needed for a matching of the small scan range with the structures of interest.

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