direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Inhalt des Dokuments

Molecular beam epitaxy (MBE)

Molecular beam epitaxy (MBE) is besides metal-organic vapor phase epitaxy (MOVPE) the common experimental method for performing epitaxial growth mostly of semiconductors. In solid source MBE the elemental materials, e.g. In, Ga, As, being solid at room temperature, are evaporated from special ovens, the effusion cells. The resulting molecular beams are then directed onto the (heated) semiconductor substrate where the epitaxial growth takes place.
In our group, MBE is used to grow thin films as well as semiconductor nanostructures like InAs quantum dots on GaAs or silicide nanowires on Si. 

Zusatzinformationen / Extras


Schnellnavigation zur Seite über Nummerneingabe

Diese Seite verwendet Matomo für anonymisierte Webanalysen. Mehr Informationen und Opt-Out-Möglichkeiten unter Datenschutz.