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InAs quantum dashes in InGaAsP
For InAs growth on InGaAsP layers
lattice matched to InP, we observed nanostructures strongly elongated
in [1-10] direction, so called quantum dashes . This behavior is in
contrast to the InAs/GaAs system, where rather compact quantum dots
The quantum dashes have an almost binary InAs composition and a truncated pyramidal shape. Their lengths and widths amount to about 60 nm and 15 nm, respectively, resulting in lateral aspect ratios around 4.
The quaternary matrix material surrounding the dashes is characterized by a lateral decomposition resulting in InAs-rich and GaP-rich columns, which correlate with the positions of the quantum dashes .
- © AG Dähne
XSTM images of InAs quantum dashes in InGaAsP at
two different orientations of the cleavage face, (a) the (1-10) and
(b) the (110) surface. The yellow ellipses indicate the quantum
dashes. The dotted orange box in (a) indicates an InAs-rich region
within the InGaAsP matrix.
 Formation of InAs/InGaAsP quantum dashes on InP(001), A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U.W. Pohl, and M. Dähne, Applied Physics Letters 95, 203105 (2009)
 InAs nanostructures on InGaAsP/InP(001): Interaction of InAs quantum dash formation with InGaAsP decomposition, F. Genz, A. Lenz, H. Eisele, L. Ivanova, R. Timm, U.W. Pohl, M. Dähne, D. Franke, and H. Künzel, Journal of Vacuum Science and Technology B 28, C5E1 (2010).