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TU Berlin

Inhalt des Dokuments

Publikationen 1995 - 1993

1995

Transition metal luminescence in AlN crystals
K. Pressel, R. Heitz, S. Nilsson, P. Thurian, A. Hoffmann, B.K. Meyer
1st Int. Symposium on GaN and Related Materials, eds. R. D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol.395, p. 613
paper

Identification of transition metals in GaN
K. Pressel, R. Heitz, L. Eckey, P. Thurian, A. Hoffmann, B.K. Meyer, S. Fischer, C. Wetzel, E. E. Haller,
1st Int. Symposium on GaN and Related Materials, eds. R. D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol.395, p. 491
paper

Spatially-resolved photoluminescence and Raman study on the GaN/substrate interface
H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki
1st Int. Symposium on GaN and Related Materials, eds. R. D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol. 395, p. 577
paper

Selective dynamical study of luminescence near the surface and the interface of epitaxial GaN
L. Eckey, A. Hoffmann, R. Heitz, I. Broser, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki
1st Int. Symposium on GaN and Related Materials, eds. R.D. Dupuis, S. Nakamura, F. A. Ponce, J. A. Edmund,
Material Research Soc. Symp. Boston (1995), Vol. 395, p. 589
paper

Zeeman splitting and isotope shift of optical transitions at Ni2+ centers in cubic ZnS
C. Schrepel, J. Schöpp, R. Heitz, A. Hoffmann, U. Scherz
Material Science Forum 196-201 (1995), 743
paper

Nonlinear Zeeman behavior of Cu2+ centers in ZnS and CdS
T. Telahun, P. Thurian, A. Hoffmann, I. Broser
Material Science Forum 196-201 (1995), 767
paper

Zeeman spectroscopy of transition metals in hexagonal GaN
R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, E. N. Mokhov
Material Science Forum 196-201 (1995), 719
paper

Local vibrational modes of 3d elements in wurtzite type ZnO and GaN crystals
P. Thurian, G. Kaczmarczyk, H. Siegle, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, R. Hoffbauer, U. Scherz
Material Science Forum 196-201 (1995), 1571
paper

Quantitative determination of hexagonal and minority phase in cubic GaN using Raman spectroscopy
H. Siegle, L. Eckey, A. Hoffmann, C. Thomsen. B.K. Meyer, D. Schikora, M. Hankeln, K. Lischka
Solid St. Commun. 96 (1995), 943
paper

Properties of the yellow luminescence in undoped GaN epitaxial layers
D. M. Hofmann, D. Kovalev, G. Steude, B.K. Meyer, A. Hoffmann, L. Eckey, R. Heitz, T. Detchprohm, H. Amano, I. Akasaki
Phys. Rev B 52, (1995), 16702
paper

Time resolved photoluminescence spectroscopy on GaN epilayers
B. K. Meyer, D. Volm, C. Wetzel, L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, E. N. Mokhov, P. G. Baranov, C. Quiu, J.I. Pankove
Defect and Impurity Engineered Semiconductors and Devices, Symposium, San Francisco (1995), eds. S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, Pittsburgh, Material Research Soc., Vol. 378 (1995), p. 521
paper

Identification of the 1.19 eV luminescence in hexagonal GaN
R. Heitz, K. Pressel, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, B.K. Meyer, E. N. Mokhov
Phys. Rev. B 52 (1995), 16508
paper

Magneto-optical investigation of the shallow lithium acceptor in zinc selenide
U.W. Pohl, D. Wiesmann, G.H. Kudlek, B. Litzenburger, A. Hoffmann
J. Cryst. Growth 159 (1996), 414
paper

Local vibrational modes of the CuO4-cluster in ZnO
I. Broser, G. Kaczmarczyk, P. Thurian, R. Heitz, A. Hoffmann
J. Cryst. Growth 159 (1996), 889
paper

Calorimetric absorption spectroscopy of deep defects and quantum dots
R. Heitz, L. Podlowski, J. Böhrer, A. Hoffmann, I. Broser, D. Bimberg
Acta Physica Polonica A 88 (1995), 619 Y
paper

Intensity-dependent energy and line shape variation of donor-acceptor-pair bands in ZnSe:N at different compensation levels
P. Bäume, J. Gutowski, D. Wiesmann, R. Heitz, A. Hoffmann, E. Kurtz, D. Hommel, G. Landwehr
Appl. Phys. Lett. 67 (1995), 1914
paper

Zeeman spectroscopy of the Fe3+ center in GaN
R. Heitz, P. Thurian, I. Loa, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, E.N. Mokhov
Appl. Phys. Lett. 67 (1995), 2822
paper

Optical investigation of gallium nitride (GaN) epitaxial layers grown on 6H-SiC
K. Pressel, S. Nilson, C. Wetzel, D. Volm, B.K. Meyer, I. Loa, P. Thurian, R. Heitz, A. Hoffmann, E. N. Mokhov, P.G. Baranov
Material Science & Technology 12 (1995), 90
paper

Dephasing of acceptor bound excitons in II-VI semiconductors
B. Lummer, R. Heitz, V. Kutzer, J.-M. Wagner, A. Hoffmann, and I. Broser
phys. stat. sol. (b) 188 (1995), 493
paper

Zeeman spectroscopy on the nitrogen acceptor bound exciton in epitaxial ZnSe
W. Stadler, B. K. Meyer, D. Volm, D. M. Hofmann, A. Hoffmann, D. Wiesmann, R. Heitz, E. Kurtz, D. Hommel
Materials Science Forum 182-184, (1995), 303
paper

Absorption as optical access to acceptor concentrations and compensation mechanisms in ZnSe epilayers
R. Heitz, B. Lummer, V. Kutzer, D. Wiesmann, A. Hoffmann, I. Broser, E. Kurtz, S. Einfeldt,
J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 259
paper

Low-temperature growth and planar nitrogen doping of ZnSe in a plasma stimulated LP-MOVPE system
W. Taudt, B. Wachtendorf, H. Hamadeh, S. Lampe, A.L. Gurski, M. Heuken, V. Kutzer, R. Heitz, U. Derscheidt, and A. Hoffmann
Materials Science Forum 182-184, (1995), 35
paper

Degenerate-four-wave-mixing at the nitrogen acceptor bound exciton in ZnSe epilayers
A. Hoffmann, B. Lummer, V. Kutzer, L. Eckey, R. Heitz, I. Broser, E. Kurtz, J. Nürnberger, B. Jobst, D. Hommel, and G. Landwehr
Materials Science Forum 182-184, (1995), 283
paper

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1994

Spatially indirect photoluminescence from InAs/AlSb heterostructures
F. Fuchs, J. Schmitz, J. D. Ralston, P. Koidl, R. Heitz, and A. Hoffmann
Superlattices and Microstructures 16 (1994), 35
paper

Recombination dynamics in strained In1-xGaxAs/InP quantum well structures
A. Hoffmann, H. Siegle, L. Eckey, B. Lummer, P. Thurian, R. Heitz, B.K. Meyer, C. Wetzel, D. M. Hofmann, V. Härle, F. Scholz, and A. Kohl
Superlattices and Microstructures 15 (1994), 303
paper

Inequivalence of staggered interfaces in InAlAs/InP Multi-quantum-well structures
F. Heinrichsdorff, J. Böhrer, L. Eckey, D. Bimberg, R. Heitz, A. Hoffmann, I. Broser
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 695
paper

Higher order photon echo in four-wave-mixing experiments
R. Heitz, B. Lummer, J.-M. Wagner, A. Hoffmann, I. Broser, and R. Zimmermann
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 365
paper

Radiative and nonradiative relaxation dynamics of transition metal centers in semiconductors
R. Heitz, L. Podlowski, P. Thurian, A. Hoffmann, and I. Broser
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 2379
paper
 
Nonlinear optical processes in birefringent and dichroitic wide band gap semiconductor
I. Broser, Ch. Fricke, R. Heitz, and A. Hoffmann
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing ed. J. Lockwood, (1994), 405
paper

Quantitative determination of the compensation in nitrogen doped ZnSe epilayers
A. Hoffmann, R. Heitz, B. Lummer, V. Kutzer, L. Eckey, I. Broser, E. Kurtz, D. Hommel, B. Jobst,
J. Nürnberger, and G. Landwehr
22nd Int. Conf. on the Phys. of Semicond. copyright by World Scientific Publishing, ed.
J. Lockwood, (1994), 2661
paper

High resolution Zeeman spectroscopy of Ni2+in ZnS
R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 50 (1994), 17028
paper

Nonradiative relaxation and the Jahn-Teller effect of Fe2+ in III-V semiconductors
R. Heitz, L. Podlowski, A. Hoffmann, and I. Broser
Proc. of the 8th Conference on Semi-Insulating III-V Materials (1994), 115
paper

Exciton dynamics in Ni-activated CdS
R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 49 (1994), 14307
paper

The influence of nitrogen on the p-conductivity in MBE grown ZnSe epilayers
A. Hoffmann, B. Lummer, L. Eckey, V. Kutzer, Ch. Fricke, R. Heitz, I. Broser, E.Kurtz, B. Jobst, and D. Hommel
J. Crystal Growth 138 (1994), 1073
paper

Low temperature growth and plasma enhanced nitrogen doping of ZnSe by MOVPE
W. Taudt, A. Schneider, M. Heuken, Ch. Fricke, and A. Hoffmann
J. Crystal Growth 138 (1994), 418
paper

Shallow impurity-and defect-related complexes in undoped ZnSe crystals
U.W. Pohl, G.H. Kudlek, A. Klimakow, and A. Hoffmann
J. Crystal Growth 138 (1994), 385
paper

Influence of growth non-stoichiometry on optical properties of doped and non-doped ZnSe grown by chemical vapor deposition
E. Krause, H. Hartmann, J. Menniger, A. Hoffmann, Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, and I. Broser
J. Crystal Growth 138, (1994), 75
paper

Degenerate-four-wave mixing at bound excitons in II-VI semiconductors
I. Broser, B. Lummer, R. Heitz, and A. Hoffmann
J. Crystal Growth 138 (1994), 809
paper

Time resolved donor-acceptor pair recombination luminescence in highly n-and p-doped II-VI-semiconductors
Ch. Fricke, R. Heitz, B. Lummer, V. Kutzer, A. Hoffmann, I. Broser, W. Taudt, and M. Heuken
J. Crystal Growth 138 (1994), 815
paper

Incorporation nitrogen in ZnSe grown by metalorganic vapor phase epitaxy
A. Hoffmann, R. Heitz, B. Lummer, Ch. Fricke, V. Kutzer, I. Broser, W. Taudt, G. Gleitsman, M. Heuken
J. Crystal Growth 138 (1994), 379
paper

Energy transfer processes via the interface of ZnSe/GaAs epilayers
N. Presser, Ch. Fricke, G. Kudlek, R. Heitz, A. Hoffmann, and I. Broser
J. Crystal Growth 138 (1994), 820
paper

Recombination mechanisms in highly doped CdS: In
Ch. Fricke, R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 49 (1994), 5313
paper

Spontaneous photon echo from the (A0,X) complex in CdS
R. Heitz, B. Lummer, A. Hoffmann, and I. Broser<
J. Lumin. 58 (1994), 237
paper

Nonradiative transition rates of Fe2+ in III-V and II-VI semiconductors
L. Podlowski, R. Heitz, P. Thurian, A. Hoffmann, and I. Broser
J. Lumin. 58 (1994), 252
paper
 
Calorimetric absorption spectroscopy of copper in II-VI semiconductors at mK temperatures
I. Broser, L. Podlowski, R. Heitz, P. Thurian, and A. Hoffmann
J. Lumin. 60/61 (1994), 588
paper

Non-linear Zeeman splitting and electron-phonon coupling
J. Schöpp, R. Heitz, A. Hoffmann, and U. Scherz
Materials Science Forum 143-147 (1994), 815
paper

Ligand induced isotope shifts of transition metal centers in ZnO
P. Thurian, R. Heitz, S. Kleinwächter, A. Hoffmann, and I. Broser
Materials Science Forum 143-147 (1994), 453
paper

Energy transfer between Fe2+ centers in polymorphic ZnS
A. Hoffmann, L. Podlowski, P. Thurian, R. Heitz, I. Broser, F. Fuchs, and P. Koidl
Materials Science Forum 143-147 (1994), 411
paper
 
Fine structure of the (Fe2+,h) bound states in GaP and InP
L. Podlowski, R. Heitz, T. Wolf, A. Hoffmann, D. Bimberg, I. Broser, and W. Ulrici
Materials Science Forum 143-147 (1994), 311
paper

Optical nonlinearities and excitation dynamics in Zn-based II-VI bulk and epitaxial materials
J. Gutowski and A. Hoffmann
Advanced Materials for Optics and Electronic 3 (1994), 15
paper

Phase transition from the cubic to the hexagonal modification in thin CdS films on InP (100) 
D.R.T. Zahn, U. Rossow, G. Kudlek, A. Hoffmann, I. Broser, W. Richter
Advanced Materials for Optics and Electronic 3 (1994), 11
paper

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1993

The influence of deep defects on exciton dynamics in CdS
R. Heitz, A. Hoffman, and I. Broser
Proc. 9th Int. Conf. on Luminescence, Storrs, USA, (1993), 112
paper

The influence of antimony interlayers on the formation of CdS epitaxial layers on InP (100) studied by Raman, photoluminescence, and ellipsometry
A. Kelnberger, D.R.T. Zahn, G. Kudlek, U. Rossow, M. Köpp, N. Esser, A. Hoffmann, and W. Richter
Formation of Semiconductor Interfaces, Proc. 4th Int. Conf., Forschungszentrum Jülich, World Scientific Singapore (1993), eds. H. Lüth, W. Mönch J. Pollmann, p. 69
paper

Structural and optical properties of Ga2S3 layers on GaAs (100)
M. von der Emde, U. Rossow, G. Kudlek, A. Hoffmann, A. Krost, W. Richter, S. Morley, A. C. Wright, J. O. Williams, and D. R. T. Zahn
Formation of Semiconductor Interfaces, Proc. 4th Int. Conf., Forschungszentrum
Jülich, World Scientific Singapore (1993), eds. H. Lüth, W. Mönch J. Pollmann, p 684
paper

Electronic structure and dynamical behavior of different exciton complexes in ZnSe bulk crystals
G.H. Kudlek, U.W. Pohl, Ch. Fricke, R. Heitz, A. Hoffmann, J. Gutowski, and I. Broser
Physica B 185 (1993), 325
paper

Magneto-optics of Cu -related defects in polymorphic ZnS
P. Thurian, R. Heitz, T. Jentzsch, A. Hoffmann, and I. Broser
Physica B 185 (1993), 239
paper

Site-selective study of picosecond relaxation processes of Ni2+in polymorphic ZnS
R. Heitz, L. Eckey, A. Hoffmann, and I. Broser
Physica B 185 (1993), 234
paper

Magneto-optics of Ni-bound shallow states in ZnS and CdS
R. Heitz, A. Hoffmann, and I. Broser
Phys. Rev. B 48 (1993), 8672
paper

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